Wafer cleaning device

Abstract

The utility model provides a wafer cleaning device which comprises a pulse laser used for emitting a laser beam to a wafer; the energy adjusting module is arranged at the laser emitting end of the pulse laser beam and used for adjusting the energy intensity of the laser beam; the spectroscope divides the laser beam passing through the energy adjusting module into a cleaning light beam and a reference light beam, and the cleaning light is focused to the surface of the wafer through the spectroscope to clean the wafer; the first detector is used for receiving the reference light beam, carrying out energy detection on the reference light beam and outputting a feedback signal; and the controller is used for receiving and analyzing the feedback signal and sending a modulation signal to the energy regulation module. According to the wafer cleaning device, the energy adjusting module is additionally arranged at the laser emitting end of the pulse laser, so that the energy intensity of the cleaned laser beam can be accurately adjusted, and the compatibility of the wafer cleaning device for cleaning different wafer film thicknesses is greatly improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor manufacturing, specifically, a wafer cleaning device. BACKGROUND

[0002] In the semiconductor device manufacturing process, the film thickness in the front process is very thin, and it is very easy to attach AMC (contaminants). The existence of AMC will bring serious interference to the subsequent film measurement work, leading to deviation of the measurement results, and then having a great negative impact on the yield of the product. To solve this problem, the industry usually uses the method of heating the wafer to remove AMC. However, the overall wafer heating program is complex and difficult to operate. Currently, the mainstream measurement equipment manufacturers use laser to individually heat the measurement point to remove AMC, that is, the laser cleaning technology.

[0003] Currently, laser cleaning faces a key challenge. If the cleaning energy is too low, it cannot achieve effective cleaning effect; if the energy is too high, it will cause damage to the product. Moreover, through a large number of experiments, it is found that different film thickness and different film materials have significant differences in the required cleaning energy and a very large span. The traditional single laser often cannot be compatible with such a large energy span, that is, it cannot simply adjust the parameters of the laser itself to achieve a large range of energy adjustment. Therefore, to achieve cleaning of wafers with multiple films and multiple thicknesses, the selection of cleaning energy is extremely important for laser cleaning. SUMMARY

[0004] In view of the problems existing in the wafer cleaning device in the prior art described above, the present application provides a wafer cleaning device.

[0005] A wafer cleaning device, characterized in that it comprises:

[0006] A carrying device for carrying a wafer to be cleaned;

[0007] A pulsed laser located above the carrying device to emit a laser beam to the wafer;

[0008] An energy adjustment module arranged at the exit end of the pulsed laser beam to adjust the energy intensity of the laser beam;

[0009] A beamsplitter located below the energy adjustment module along the propagation direction of the laser beam to receive the laser beam after the energy adjustment module to split the laser beam into a cleaning beam and a reference beam;

[0010] A first detector receiving the reference light and performing energy detection on the reference light and outputting a feedback signal;

[0011] A controller receives and analyzes the feedback signal and sends a modulation signal to the energy adjustment module.

[0012] Optionally, a collimating mirror is arranged between the pulsed laser and the energy adjustment module.

[0013] Optionally, the energy adjustment module comprises:

[0014] A color wheel is arranged at the exit end of the pulsed laser, and the color wheel comprises a plurality of mounting holes in which filters with different transmittances are mounted.

[0015] A decoder receives the modulation signal from the controller and converts the modulation signal into a control signal of the energy adjustment module.

[0016] A motor is arranged between the color wheel and the decoder, and the motor is communicatively connected to the decoder and mechanically connected to the decoder, and the motor receives the control signal to control the rotation of the color wheel.

[0017] Optionally, a process chamber is further included, and the wafer cleaning device is arranged in the process chamber.

[0018] Optionally, the energy adjustment module further comprises:

[0019] A mounting seat is arranged between the motor and the color wheel to fix the energy adjustment module in the process chamber.

[0020] Optionally, the mounting holes are centrally symmetrically distributed along the center of the color wheel.

[0021] Optionally, the color wheel comprises at least one through hole.

[0022] Optionally, the motor is a stepper motor.

[0023] Optionally, a metrology device is further included and arranged in the process chamber, and the metrology unit and the wafer cleaning device are arranged side by side above the wafer carrying device.

[0024] Optionally, the metrology device comprises:

[0025] A light source emitter is configured to emit a measurement light beam to the wafer.

[0026] A second detector receives a reflected light beam from the wafer and transmits a signal of the reflected light beam to the controller.

[0027] As described above, the wafer cleaning device has at least the following beneficial technical effects:

[0028] Precise energy adjustment enables efficient cleaning. The wafer cleaning apparatus provided in this application, by adding an energy adjustment module, can precisely adjust the energy intensity of the laser beam. This precise adjustment allows the laser beam energy to be adapted according to the actual situation of contaminants on the wafer surface and the characteristics of the wafer itself, such as its material and film layers. For contaminants of different thicknesses, the appropriate energy can be accurately adjusted to ensure that contaminants are effectively removed while avoiding damage to the wafer substrate due to excessive energy, thereby achieving a highly efficient and high-quality cleaning effect.

[0029] Real-time energy monitoring and feedback ensure cleaning stability. The system uses a beam splitter to separate the laser beam, after passing through the energy adjustment module, into a cleaning beam and a reference beam. The cleaning beam is focused onto the wafer surface for cleaning, while the reference beam is received by a first detector for energy detection, and a feedback signal is then output to the controller. The controller analyzes this feedback signal and sends a modulation signal to the energy adjustment module accordingly. This forms a real-time energy monitoring and feedback closed loop, allowing the system to constantly monitor the actual energy of the cleaning beam and make timely adjustments based on changes, significantly improving the stability and reliability of the cleaning effect. Attached Figure Description

[0030] Figure 1 The diagram shown is a schematic representation of the wafer cleaning apparatus provided in Embodiment 1.

[0031] Figure 2 The diagram shown is a structural schematic of the energy regulation module provided in Embodiment 1.

[0032] Figure 3 Displayed as Figure 2 The diagram shows the structure of the color wheel in the energy regulation module.

[0033] Figure 4 The diagram shown is a schematic of the wafer cleaning apparatus provided in Embodiment 2.

[0034] Figure 5 The diagram shown is a schematic representation of the wafer cleaning apparatus provided in Example 2.

[0035] Figure Labels

[0036] 00. Process chamber; 10. Wafer cleaning device; 110. Pulsed laser; 120. Collimating lens; 130. Energy adjustment module; 140. First detector; 150. Beam splitter; 160. Controller; 131. Decoder; 132. Color wheel; 1321. Filter; 133. Motor; 134. Mounting base; 135. Control line; 20. Measurement unit; 201. Light source emitter; 202. Second detector; 30. Wafer; 40. Wafer carrier; 50. Controller. Detailed Implementation

[0037] The following specific examples illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. This utility model can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this utility model.

[0038] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of this utility model. Although the illustrations only show components related to this utility model and are not drawn according to the actual number, shape and size of the components, the shape, quantity, positional relationship and proportion of each component can be arbitrarily changed under the premise of realizing the technical solution of this utility model, and the layout of the components may also be more complex.

[0039] Example 1

[0040] This embodiment provides a wafer cleaning apparatus, such as... Figure 1 The diagram shown illustrates the composition of the wafer cleaning apparatus provided in this embodiment; Figure 1 As can be seen, the wafer cleaning apparatus provided in this embodiment includes a wafer carrier 40, a pulsed laser 110, an energy adjustment module 130, a beam splitter 150, a first detector 140, and a controller 160. The wafer carrier 40 is used to carry the wafer 30 to be cleaned; the pulsed laser 110 is disposed above the wafer carrier 40 to emit a laser beam toward the wafer 30; the energy adjustment module 130 is used to adjust the energy intensity of the laser beam; the beam splitter 150 is located below the energy adjustment module 130 along the propagation line of the laser beam, and the beam splitter 150 splits the laser beam after passing through the energy adjustment module 130 into a cleaning beam and a reference beam. The cleaning beam is focused onto the surface of the wafer 30 through the beam splitter 150 to clean the wafer 30; the first detector 140 receives the reference beam, performs energy detection on the reference beam, and outputs a feedback signal; the controller 160 receives the feedback signal from the first detector 140 and sends a modulation signal to the energy adjustment module 130. Generally, the wafer cleaning apparatus also includes a process chamber 00, which is located inside the process chamber 00.

[0041] Generally, the pulsed laser 110 provides a high-energy pulsed beam with a wavelength selectable within a certain range. Different wavelengths exhibit different absorption and interaction effects on contaminants and films on different materials. By selecting an appropriate wavelength, the cleaning effect can be optimized, improving the cleaning efficiency for specific contaminants or films while reducing damage to the wafer substrate and other structures. Typically, the wavelength is between 300 nm and 700 nm, further between 350 nm and 650 nm, and even further, 355 nm, 532 nm, and 632 nm can be selected. The pulse width can be at the nanosecond, picosecond, or femtosecond level. Laser pulses with different pulse widths produce different physical processes and effects when interacting with matter.

[0042] like Figure 2 The diagram shown is a structural schematic of the energy regulation module provided in this embodiment; Figure 2 As can be seen, the energy regulation module 130 includes a decoder 131, a color wheel 132, a motor 133, a mounting base 134, and a control line 135. Generally, the positional relationship of the decoder 131, color wheel 132, motor 133, and other structures in the energy regulation module 130 can be set according to the actual situation. Specifically, for example... Figure 2 As shown, in this embodiment, the decoder 131, motor 133, mounting base 134, and color wheel 132 are arranged vertically in sequence. Generally, the position of each structure in the energy adjustment module can be set according to the actual situation. Specifically, in this embodiment, the color wheel 132 is located at the output end of the pulsed laser 110; the color wheel 132 is equipped with multiple mounting holes for mounting filters 1321 with different transmittances. The laser beam passes through the filters 1321 to adjust the energy intensity of the laser beam; the decoder 131 is used to receive the modulation signal from the controller 160 and convert the modulation signal into a control signal for the energy adjustment module 130; the motor 133 is located between the color wheel 132 and the decoder 131, and the motor 133 is communicatively connected to the decoder 131 and the color wheel 132. The motor 133 is mechanically connected to the decoder 131. The motor 133 receives control signals to drive the rotation of the color wheel 132 and provides power to the energy adjustment module 130. The mounting base 134 is disposed between the motor 133 and the color wheel 132 to fix the energy adjustment module to the process chamber 00. Specifically, the mounting base 134 fixes the motor 133 to the process chamber 00 and installs the energy adjustment module 130 at the output end of the pulsed laser 110. The control line 135 connects the controller 160 and the energy adjustment module 130 for transmitting information and transmitting control commands.

[0043] Specifically, the decoder 131 receives instructions from the controller 160 and converts them into operations that can be performed by the internal components of the energy adjustment module 130 (mainly the motor 133). For example, if the controller 160 instructs the laser energy to be adjusted to a specific value, the decoder 131 will parse the instruction and determine the specific parameters such as the direction, angle, or speed of the motor 133 to rotate, thereby preparing for the subsequent control of the motor 133 to drive the color wheel 132 to rotate and select a suitable filter to adjust the laser energy.

[0044] Specifically, such as Figure 3 The diagram shown is a schematic representation of the color wheel structure; Figure 3 It is known that the color wheel 132 has multiple mounting holes for mounting filters 1321 with different transmittance. When the laser beam passes through the filter 1321, it changes the transmittance of the laser beam, thereby adjusting the energy intensity of the laser. Generally, the number of mounting holes can be set according to the actual size of the color wheel, typically ranging from 2 to 100. Specifically, in this embodiment, the number of mounting holes is 10. Specifically, the mounting holes are centrally symmetrically distributed along the center of the color wheel 132. Generally, the transmittance of the filter 1321 can be selected according to actual conditions. When higher energy is required to clean thicker or more difficult-to-clean films, the color wheel 132 can be rotated to align the filter with higher transmittance with the optical path, allowing more laser energy to pass through. For thinner or energy-sensitive films, a filter with lower transmittance is switched to reduce the laser energy reaching the wafer surface, thus meeting the different energy requirements for cleaning different films.

[0045] Generally, the material of the filter 1321 can be selected according to actual needs. This includes glass filters (optical glass, colored glass, etc.), plastic filters (acrylic resin, polycarbonate, etc.), crystal filters (quartz crystal, calcium fluoride crystal, etc.), and thin film filters (dielectric thin film, metal thin film, etc.). Specifically, in this embodiment, the material of the filter 1321 is a pollution-free and cost-controllable metal coating. Generally, the transmittance of the filter 1321 is between 5% and 100%. Specifically, the transmittance of the filter 1321 is 100%, 90%, 80%, 60%, 50%, 40%, 30%, 20%, 10%, and 5%.

[0046] Specifically, the color wheel 132 typically retains a through-hole, which plays a crucial role during the system commissioning phase. After system installation or maintenance, the entire device needs to be commissioned and calibrated to ensure that all components function properly and coordinate well. At this time, the color wheel can be rotated to the through-hole position, allowing the laser to pass directly without any attenuation or alteration from filters, thereby obtaining the laser energy parameters in the initial state of the system. This helps technicians accurately determine whether the system is working properly, ensuring the reliability and accuracy of the system in actual cleaning operations.

[0047] The motor 133 is a key power source for implementing the energy adjustment function in the energy adjustment module 130. During the laser cleaning process, the decoder 131 receives the modulation signal from the controller 160 and converts the modulation signal into a control signal of the energy adjustment module 130, and the motor 133 receives the control signal to accurately control the angle, direction and speed of rotation, and drives the color wheel 132 to rotate. Generally, there are many types of motors 133, and the motor suitable for the wafer cleaning device 10 provided in the embodiment includes a high-precision stepper motor and a servo motor. Specifically, a high-precision stepper motor is used in the embodiment, which can accurately control the position of the color wheel.

[0048] The mounting seat 134 is arranged above the motor 133, and the mounting seat is used to fix the color wheel 132. The mounting seat 134 is used to mount the energy adjustment module 130 to the laser emitting end of the pulsed laser 110. In addition, the mounting seat 134 provides a stable physical support structure for the decoder 131, the color wheel 132, the motor 133 and other components in the energy adjustment module 130. It ensures that these components can maintain a relatively fixed positional relationship during the working process, reduces the displacement or loosening of the components caused by external vibration, impact or other mechanical interference factors, and controls the line 135. The key channel for information interaction between the controller 160 and the energy adjustment module 130, various instructions generated by the controller 160, the driving signal of the motor 133 (including the control information of the rotation direction, angle, speed, etc.) and the operation instruction of the decoder 131 are accurately transmitted to the corresponding components in the energy adjustment module through the control line 135. The control line 135 also feeds back the working state information of the internal components of the energy adjustment module 130 to the controller 160.

[0049] Please continue to refer to Figure 1 The laser beam passing through the energy adjustment module 130 enters the beam splitter 150, and the beam splitter 150 divides the laser beam into reflected light and transmitted light according to a certain ratio. The transmitted light part can be used as cleaning light and is focused vertically to the wafer 30 surface through the lens group after passing through the beam splitter, which is used for cleaning the wafer surface pollution layer. The reflected light part is used as reference light and is reflected to the first detector 140 for monitoring and feedback of the laser energy. Generally, the splitting ratio of the beam splitter refers to the energy distribution ratio of the reflected light and the transmitted light. For example, common splitting ratios include 50:50, 60:40, 70:30, etc., wherein the former number represents the proportion of reflected light, and the latter number represents the proportion of transmitted light.

[0050] Generally, the first detector 140 includes photodetectors, thermal detectors, quantum detectors, CCD detectors, and CMOS detectors. Specifically, the first detector 140 performs energy detection on the reference light, converts the optical signal into an electrical signal, and uploads the data to the controller 160 in real time. The controller 160 compares the energy data of the reference light fed back by the first detector 140 with the energy data required for the film layer to be cleaned, in combination with the current film material and thickness, and issues an instruction to the motor 133 to drive the color wheel 132 to rotate and change the transmittance of the filter 1321 of the energy adjustment module 130, so as to adjust the energy of the cleaning light. The first detector 140 is one of the key links in the closed-loop control of the laser cleaning system. In the closed-loop controller, the first detector 140 continuously collects the energy information of the reference light and feeds it back to the controller 160. The controller 160 adjusts the energy of the cleaning light in real time according to the feedback information of the first detector 140, forming a dynamic feedback regulation loop.

[0051] In addition, in addition to real-time monitoring and feedback of the energy during the cleaning process, the first detector 140 can also assist in monitoring the running state of the entire laser cleaning system. Through long-term monitoring and data analysis of the energy of the reference light, the performance change trend of the optical elements in the system can be judged. For example, if the first detector 140 detects that the energy of the reference light gradually decays or abnormally fluctuates over a period of time, it may indicate that the performance of the optical elements such as the beam splitter in the system is decaying, contaminated, or damaged.

[0052] The controller 160 coordinates the work between various components in the wafer cleaning device 10. For example, the running state of the motor 133 (such as whether it is normally rotating, the current position, etc.), the execution of the instructions by the decoder 131, and the energy data collected by the first detector 140, etc. Information can be fed back to the controller 160 through the control line 135. The controller 160 can also adjust and optimize the working mode, parameter setting, etc. of the system. For example, when facing different types of wafers or cleaning tasks, the controller 160 can automatically switch to the corresponding working mode, adjust the pulse frequency, energy size, cleaning time, etc. of the laser beam, to adapt to different cleaning requirements, improve the flexibility and adaptability of the system, and ensure that the system can operate efficiently and stably in various situations.

[0053] Specifically, before cleaning, the energy data required by the film layer of the wafer 30 to be cleaned is obtained, and the energy data is related to the material and thickness of the film thickness of the wafer 30. Generally, the energy required by the film layer of the wafer 30 to be cleaned can be based on the optimal cleaning energy parameters of different film layer materials and thicknesses obtained by a large number of experiments in advance, or can be calculated or inquired according to the film layer information provided by the customer. The controller 160 sets the pulsed laser 110 to the cleaning mode, so that the output laser energy of the pulsed laser 110 meets the preliminary requirements.

[0054] During the cleaning process, the controller 160 instructs the first detector 140 to collect the energy data of the pulsed laser 110 under the current state of the color wheel 132, and compares the energy data with the energy required by the film thickness of the wafer 30 to be cleaned obtained before cleaning. If there is a difference between the two, the controller 160 will accurately calculate the angle and direction that the color wheel motor needs to rotate according to the comparison result, and then instruct the color wheel motor to rotate to change the transmittance of the filter of the energy adjustment module, so as to adjust the energy of the cleaning light. This process will continue to circulate until the energy data collected by the detector matches the energy data required by the film layer to be cleaned, so as to ensure that the cleaning light energy can meet the cleaning requirements of the specific film layer and ensure the cleaning effect.

[0055] Specifically, as shown in Figure 1 The wafer cleaning device 10 provided by the embodiment is also provided with a collimating mirror 120, which is arranged between the pulsed laser 110 and the energy adjustment module 130. The divergence angle of the laser beam emitted by the pulsed laser 110 can be large during transmission. The collimating mirror 120 can reshape the divergent laser beam into a parallel light beam, so that the laser beam can maintain good directionality during subsequent transmission, reduce energy dispersion, and ensure that the laser energy can be more concentrated transmitted to the subsequent optical elements and the surface of the wafer 30, thereby improving the efficiency and effect of the laser cleaning system.

[0056] In summary, the wafer cleaning apparatus 10 provided in this embodiment, by adding an energy adjustment module 130 to the laser emitting end of the pulsed laser 110, can precisely adjust the energy intensity of the cleaning laser beam, which has high flexibility and greatly improves the compatibility of the wafer cleaning apparatus to clean different wafer film thicknesses. This allows the same wafer cleaning apparatus to handle different cleaning tasks, saving the cost and time of replacing equipment. Furthermore, the laser cleaning system achieves closed-loop cleaning through the cooperation of its various structures. The wavelength and pulse width of the pulsed laser can be flexibly adjusted to optimize cleaning and reduce damage based on different contaminants and film materials. The collimating lens shapes the diverging laser beam into a parallel beam, improving energy utilization efficiency and concentrating laser energy on the wafer surface. The beam splitter divides the beam into cleaning light and reference light, performing energy monitoring while achieving the cleaning function, enhancing system reliability and accuracy. The energy adjustment module can precisely control the cleaning light energy according to cleaning requirements, adapting to various scenarios and expanding the application range. The first detector can convert the reference light signal and measure its energy, providing a basis for adjusting the cleaning light energy, ensuring stable cleaning results through closed-loop control. The controller, as the core, coordinates the work of each structure, optimizing and adjusting system parameters according to the task and monitoring in real time, achieving automation and precise control of the cleaning process. The complementary advantages of each structure contribute to the high efficiency, precision, reliability, and adaptability of the laser cleaning system.

[0057] Example 2

[0058] This embodiment also provides a wafer cleaning device, such as... Figure 4 The diagram shown is a schematic representation of the modules of the wafer cleaning apparatus provided in this embodiment; from Figure 4 As can be seen from the diagram, the wafer cleaning apparatus provided in this embodiment includes the wafer cleaning apparatus 10 provided in Embodiment 1, as well as the measurement device 20 and the controller 50. The wafer cleaning apparatus 10 and the measurement device 20 are disposed in the process chamber 00 and are arranged side by side above the wafer carrier 40. The wafer cleaning apparatus 10 is used to clean the wafer 30; the measurement device 20 is used to measure the film thickness of the wafer 30; and the controller 50 controls the wafer cleaning apparatus 10 and the measurement device 20. Specifically, in this embodiment, the wafer cleaning apparatus 10 includes the wafer cleaning apparatus provided in Embodiment 1.

[0059] like Figure 5 The diagram shown illustrates the composition of the wafer cleaning apparatus provided in this embodiment; Figure 5As can be seen, the measurement unit 20 provided by the embodiment includes a light source emitter 201 and a second detector 202. The light source emitter 201 is configured to emit a measurement light beam towards the wafer 30; the second detector 202 is configured to receive a reflected light beam from the wafer 30 and transmit a signal of the reflected light beam to the controller 50. Specifically, the measurement unit 20 is arranged side by side with the wafer cleaning device 10 above the wafer carrying device 40, so as to ensure that the measurement light beam emitted by the measurement unit 20 and the cleaning light beam emitted by the wafer cleaning device 10 do not interfere with each other, and the light beam received by the first detector 140 is the reference light beam emitted by the wafer cleaning device 10, and the light beam received by the second detector 202 is the measurement light beam emitted by the measurement unit 20.

[0060] Generally, the measurement unit 20 includes an optical emission system, a non-optical emission system, and an integrated system of the optical emission system and the non-optical emission system. Specifically, the optical emission system includes a laser emission system, an infrared spectrum interference emission system, a white light interference emission system, an optical reflection emission system, etc.; the non-optical emission system includes an electron beam emission system, an X-ray emission system, etc. The signal emission system can be a single emission system or an integrated system of multiple emission systems. As long as the signal emission system can realize the emission of the film thickness of the wafer 30 to be measured, it can be included in the scope of the present patent. Specifically, in the embodiment, the measurement unit 20 is an ellipsometric measurement system. One or more measurement systems can be arranged according to actual needs to improve the accuracy of film thickness detection. Specifically, in the embodiment, the measurement system is arranged.

[0061] Specifically, the light source emitter 201 includes a light source and a polarizer. The polarizer is configured to convert the light source into polarized light. In addition to the polarizer, the light source emitter 201 can further include one or more of a first phase compensator and a first objective lens. In particular, the polarizer, the first phase compensator, and the first objective lens can be arranged in sequence along an incident light path. The second detector 202 includes a second objective lens, an analyzer, and a second phase compensator. The analyzer is configured to define a polarization direction of the light reflected from the wafer as a certain determined linear polarization direction, and at least performs an analyzer processing on the light signal reflected or diffracted from the sample to obtain a processed light signal; the second objective lens, the second phase compensator, and the analyzer can be arranged in sequence along a reflected light path from the sample.

[0062] The controller 50 is used to arrange the working order of the wafer cleaning device 10 and the measurement unit 20, instruct the wafer cleaning device 10 to perform cleaning operation on the wafer 30 to remove the surface contaminants. After the cleaning, the measurement unit 20 is started to measure the film thickness of the wafer 30. Inside the wafer cleaning device 10 and the measurement unit 20, the controller 50 also plays a role in coordinating the work of each structure. For example, in the wafer cleaning device 10, it controls the emission parameters (such as pulse frequency, energy, etc.) of the pulsed laser 110, adjusts the working state of the energy adjustment module 130 to adapt to the cleaning requirements. In the measurement unit 20, the controller 50 controls the light source of the light source emitter 201 to turn on and off, adjusts the polarization angle of the polarizer, and adjusts the working parameters of each element in the second detector 202, to ensure the accuracy of the entire measurement process.

[0063] In addition, the controller 50 can receive data feedback from each component of the wafer cleaning device 10. For example, the energy data of the cleaning light is obtained from the detector, and whether the energy of the cleaning light is appropriate is judged according to the data, and the energy adjustment module is adjusted in time. At the same time, it can also record the cleaning time, cleaning area and other information, and provide data support for subsequent quality control and process optimization. For the measurement unit 20, the controller 50 receives the reflected light beam signal data transmitted by the second detector 202. By processing and analyzing these data, such as using ellipsometry algorithm, the film thickness of the wafer 30 is calculated. And it can compare the measurement result with the preset standard value, if it is found that the measurement result exceeds the allowed range, it may trigger an alarm or require re-cleaning and measurement to ensure that the product quality meets the requirements.

[0064] In summary, the wafer cleaning device provided in the embodiment integrates the wafer cleaning device and the measurement unit, and realizes the integration of the wafer cleaning and measurement functions.

[0065] The above embodiment only illustrates the principle and effect of the present application, and is not used to limit the present application. Any person skilled in the art can modify or change the above embodiment without departing from the spirit and scope of the present application. Therefore, all equivalent modifications or changes made by those skilled in the art without departing from the spirit and technical thought of the present application should be covered by the claims of the present application.

Claims

1. A wafer cleaning apparatus, characterized by comprising: The application relates to a wafer cleaning device, comprising: a wafer supporting device for supporting a wafer to be cleaned; a pulsed laser positioned above the wafer supporting device to emit a laser beam to the wafer; an energy adjusting module arranged at the exit end of the pulsed laser to adjust the energy intensity of the laser beam; a beam splitter arranged below the energy adjusting module along the propagation direction of the laser beam to receive the laser beam after passing through the energy adjusting module and to split the laser beam into a cleaning beam and a reference beam; a first detector receiving the reference beam and performing energy detection on the reference beam and outputting a feedback signal; a controller receiving and analyzing the feedback signal and sending a modulation signal to the energy adjusting module.

2. The wafer cleaning apparatus according to claim 1, wherein A collimating mirror is further arranged between the pulsed laser and the energy adjusting module.

3. The wafer cleaning apparatus of claim 1, wherein The energy adjusting module comprises: a color wheel arranged at the exit end of the pulsed laser, the color wheel comprising a plurality of mounting holes, wherein different transmittance filters are mounted in the mounting holes; a decoder receiving the modulation signal from the controller and converting the modulation signal into a control signal of the energy adjusting module; a motor arranged between the color wheel and the decoder, wherein the motor is communicatively connected to the decoder and mechanically connected to the decoder, and the motor receives the control signal to control the rotation of the color wheel.

4. The wafer cleaning apparatus according to claim 3, wherein A process chamber is further provided, and the wafer cleaning device is arranged in the process chamber.

5. The wafer cleaning apparatus according to claim 4, wherein The energy adjusting module further comprises a mounting seat arranged between the motor and the color wheel to fix the energy adjusting module in the process chamber.

6. The wafer cleaning apparatus of claim 3, wherein The mounting holes are centrally symmetrically distributed along the center of the color wheel.

7. The wafer cleaning apparatus of claim 3, wherein The color wheel comprises at least one through hole.

8. The wafer cleaning apparatus of claim 3, wherein The motor is a stepping motor.

9. The wafer cleaning apparatus of claim 4, wherein the wafer cleaning apparatus is a wafer cleaning apparatus, and wherein the wafer cleaning apparatus comprises a wafer cleaning apparatus. A metrology unit is further arranged in the process chamber, and the metrology unit and the wafer cleaning device are arranged side by side above the wafer supporting device.

10. The wafer cleaning apparatus of claim 9, wherein the wafer cleaning apparatus is configured to perform a cleaning operation on the wafer by moving the wafer in the first direction and the second direction. The metrology unit comprises: a light source emitter for emitting a measurement beam to the wafer; a second detector receiving a reflected beam from the wafer and transmitting a signal of the reflected beam to the controller.

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