Plasma processing apparatus
By setting up a gas distribution plate and an electrode plate in the plasma processing device, the gas flow and electric field distribution are optimized, which solves the problem of poor substrate processing consistency caused by uneven gas distribution and achieves higher quality processing results.
Patent Information
- Application Number
- CN202422929720.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-29
- Publication Date
- 2025-12-16
- Estimated Expiration
- 2034-11-29
AI Technical Summary
Traditional plasma processing devices suffer from uneven gas distribution, resulting in poor substrate processing consistency and making it difficult to meet high-quality processing requirements.
A plasma processing device is designed to form an inlet and outlet gas distribution space by setting first and second gas distribution plates in the cavity, and setting ground electrode plate and radio frequency electrode plate in the enclosed area to optimize gas flow and electric field distribution, so as to achieve uniform gas introduction and discharge and improve the uniformity of plasma distribution.
It improves the stability and uniformity of plasma near the substrate, thereby enhancing the consistency and quality of substrate processing.
Smart Images
Figure CN223680054U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of plasma, in particular to a plasma processing device. BACKGROUND
[0002] With the rapid development of electronic technology, the processing requirements for integrated circuits (IC) and MEMS (Micro-Electro-Mechanical Systems) devices and the like are becoming higher and higher, which requires the processing capacity of semiconductor wafers to be continuously improved. Plasma technology is widely used in material processing and processing due to its high energy, high reactivity and precise control capability, so as to improve the processing and processing quality.
[0003] The plasma processing device is usually composed of a pair of parallel metal electrodes and a vacuum cavity, one of which is grounded and the other is used to apply a radio frequency voltage. There is a quasi-electrostatic field inside the sheath in front of the two electrodes. The initial electrons in the cavity are accelerated and gain energy under the action of the radio frequency electric field, bombard the gas to ionize it, generate more electrons, ions and active group particles, and form a dynamic balance of low temperature plasma to process the substrate material to be processed.
[0004] However, the traditional plasma processing device has uneven gas distribution, poor processing consistency of the substrate, and is difficult to meet the high-quality processing requirements. CONTENT OF THE INVENTION
[0005] Therefore, it is necessary to provide a plasma processing device capable of improving the processing consistency in view of the above problems.
[0006] A plasma processing device comprises:
[0007] a cavity;
[0008] a first gas distribution plate and a second gas distribution plate oppositely arranged in the cavity; the first gas distribution plate and the second gas distribution plate form a gas inlet distribution space with a first cavity wall of the cavity and a gas outlet distribution space with a second cavity wall of the cavity; wherein a plurality of gas holes are distributed on the first gas distribution plate and the second gas distribution plate;
[0009] a ground electrode plate and a radio frequency electrode plate oppositely arranged in the cavity; the ground electrode plate and the radio frequency electrode plate are located in the enclosed area formed by the first gas distribution plate and the second gas distribution plate.
[0010] In one embodiment, the extension direction of the first gas distribution plate and the second gas distribution plate is the vertical direction.
[0011] In one of the embodiments, the number of the gas holes on the first gas distribution plate decreases along the gravity direction, and the arrangement of the gas holes on the second gas distribution plate is the same as that of the first gas distribution plate.
[0012] In one of the embodiments, the size of the gas holes on the first gas distribution plate decreases along the gravity direction, and the arrangement of the gas holes on the second gas distribution plate is the same as that of the first gas distribution plate.
[0013] In one of the embodiments, the extension direction of the ground electrode plate and the radio frequency electrode plate is horizontal direction.
[0014] In one of the embodiments, the plasma processing device further comprises:
[0015] A support assembly disposed between the ground electrode plate and the radio frequency electrode plate, the support assembly is used to support the substrate.
[0016] In one of the embodiments, the support assembly comprises a plurality of support bodies, and the plurality of support bodies are disposed at intervals.
[0017] In one of the embodiments, the number of the ground electrode plates is at least two; one radio frequency electrode plate is disposed between the two ground electrode plates; and a support assembly is disposed between the ground electrode plate and the radio frequency electrode plate.
[0018] In one of the embodiments, the plasma processing device further comprises a substrate table, the substrate table is connected to the ground electrode plate at one end; and the substrate table is used to change the position of the ground electrode plate and the radio frequency electrode plate when moving.
[0019] In one of the embodiments, the plasma processing device further comprises at least one coil, and the cavity is located in the magnetic field generated by the coil.
[0020] The plasma processing device comprises a cavity, a first gas distribution plate and a second gas distribution plate oppositely arranged in the cavity, a ground electrode plate and a radio frequency electrode plate oppositely arranged in the cavity. The first gas distribution plate and the second gas distribution plate form an inlet gas distribution space and an outlet gas distribution space with the first cavity wall and the second cavity wall of the cavity. The first gas distribution plate and the second gas distribution plate are provided with a plurality of gas holes. The ground electrode plate and the radio frequency electrode plate are located in the enclosed area formed by the first gas distribution plate and the second gas distribution plate. By forming the inlet gas distribution space and the outlet gas distribution space on both sides of the cavity, the gas can be uniformly and quickly introduced and discharged. By providing a plurality of gas holes on the first gas distribution plate and the second gas distribution plate, the gas flow in the cavity is more stable and uniform. Therefore, the uniformity of the gas pressure in the cavity is improved, and the uniformity of the plasma generated by the radio frequency electric field generated by the radio frequency electrode plate and the ground electrode plate is improved, thereby improving the stability and uniformity of the plasma near the substrate to be processed, thereby improving the consistency of the substrate processing effect and improving the processing quality. BRIEF DESCRIPTION OF DRAWINGS
[0021] Figure 1 FIG. 1 is a structural schematic diagram of a plasma processing device according to an embodiment of the present application;
[0022] Figure 2 FIG. 2 is a structural schematic diagram of a plasma processing device according to another embodiment of the present application;
[0023] Figure 3 FIG. 3 is a structural schematic diagram of a plasma processing device according to another embodiment of the present application. DETAILED DESCRIPTION
[0024] In order to make the purpose, technical scheme and advantages of the present application more clear, the present application will be further described in detail below in combination with the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not intended to limit the present application.
[0025] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
[0026] It can be understood that the terms "first", "second", etc. used in the present application can be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish the first element from another element.
[0027] Spatially relative terms, such as "beneath", "below", "lower", "under", "above", "upper" and the like, can be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and / or operation in addition to the orientations depicted in the figures. For example, if a device in the figures is inverted, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary term "below" can encompass both an orientation of above and below. The devices can be otherwise oriented (e.g., rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
[0028] It is noted that when an element is referred to as being "connected", "coupled", or "adjacent" to another element, it can be directly connected, coupled, or adjacent to the other element, or it can be connected, coupled, or adjacent to the other element via a third element. In addition, "connected", "coupled", or "adjacent" in the following embodiments, if there is a transmission of electrical signals or data between the connected objects, should be understood as "electrically connected", "communicatively connected", etc.
[0029] As used herein, the singular forms "a", "an" and "the" include plural referents unless the context clearly dictates otherwise. It is to be understood that the terms "comprising", "comprises" and "comprised of" or "comprising" or "having" or "including" as used herein are specifically intended to be interpreted as specifying the presence of stated features, integers, steps or components but not precluding the presence or addition of one or more other features, integers, steps, components or groups thereof.
[0030] In one embodiment, a plasma processing apparatus is provided. As shown in Figure 1 The plasma processing apparatus includes a chamber 100. The chamber 100 is a space for accommodating a substrate to be processed and generating plasma. The chamber 100 can be a vacuum chamber. The shape, size and material of the chamber 100 are determined according to the specific processing requirements and process conditions, which are not limited in the present embodiment.
[0031] The plasma processing apparatus further includes a first gas distribution plate 102 and a second gas distribution plate 104 oppositely arranged in the chamber 100. The first gas distribution plate 102 forms a gas inlet distribution space with a first chamber wall of the chamber 100, and the second gas distribution plate 104 forms a gas outlet distribution space with a second chamber wall of the chamber 100.
[0032] The first chamber wall and the second chamber wall are two oppositely arranged chamber walls of the chamber 100. The first chamber wall and the second chamber wall can be, for example, Figure 1The two walls in the vertical direction shown in the schematic can also be two walls arranged in the horizontal direction, and those skilled in the art can arrange according to specific conditions.
[0033] The first air distribution plate 102 and the first cavity wall form an independent air inlet and distribution space, one side of the air inlet and distribution space is provided with an air inlet for providing gas into the cavity 100. The reaction gas provided into the cavity 100 can be ionized gas such as Ar (argon), O2 (oxygen) and N2 (nitrogen).
[0034] The second air distribution plate 104 and the second cavity wall form an independent air outlet and distribution space, one side of the air outlet and distribution space is provided with an air outlet for discharging unreacted gas and reaction gas. By timely discharging the gas in the cavity 100, it is convenient to maintain a certain air pressure in the cavity 100.
[0035] By arranging independent air inlet and distribution space and air outlet and distribution space, it is helpful to uniformly and quickly introduce and discharge gas, and then realize effective circulation and uniform air pressure distribution.
[0036] Among them, the first air distribution plate 102 and the second air distribution plate 104 are distributed with a plurality of air holes, which form the channel for the gas to enter and exit the cavity 100, so that the gas can be uniformly distributed in the entire cavity 100.
[0037] The plasma processing device also includes a ground electrode plate 106 and a radio frequency electrode plate 108 arranged opposite in the cavity 100. The ground electrode plate 106 and the radio frequency electrode plate 108 are in the enclosed area formed by the first air distribution plate 102 and the second air distribution plate 104.
[0038] The ground electrode plate 106 is usually used for grounding as a reference point of the electric field; while the radio frequency electrode plate 108 is connected to the radio frequency power supply for generating a high frequency electric field. The radio frequency power supply can be a radio frequency power supply of 13.56MHz or 27MHZ, or a radio frequency power supply of other radio frequency.
[0039] When the radio frequency power supply is turned on, a high frequency electric field is formed between the radio frequency electrode plate 108 and the ground electrode plate 106, so that the gas molecules in the cavity 100 are ionized to form plasma. The high-energy particles in the plasma will interact with the surface of the substrate to be processed, thereby achieving the processing purpose of the substrate.
[0040] By arranging the ground electrode plate 106 and the radio frequency electrode plate 108 in the enclosed area formed by the first air distribution plate 102 and the second air distribution plate 104, it is helpful to form a stable electric field in the cavity 100, thereby stably exciting the gas to generate plasma.
[0041] The setting direction of the ground electrode plate 106 and the radio frequency electrode plate 108 does not need to be limited, and the extension direction of the ground electrode plate 106 and the radio frequency electrode plate 108 can be the same as or different from the extension direction of the first gas distribution plate 102 and the second gas distribution plate 104. When the ground electrode plate 106 and the radio frequency electrode plate 108 are set, the preferred extension direction is a direction in which the radio frequency electric field generated by the ground electrode plate 106 and the radio frequency electrode plate 108 can excite the plasma generated by the gas to have higher uniformity.
[0042] The above-described plasma processing device includes a cavity 100, a first gas distribution plate 102 and a second gas distribution plate 104 oppositely arranged in the cavity 100, a ground electrode plate 106 and a radio frequency electrode plate 108 oppositely arranged in the cavity 100. The first gas distribution plate 102 and the second gas distribution plate 104 form a gas inlet and distribution space with the first cavity wall of the cavity 100, and the second gas distribution plate 104 forms a gas outlet and distribution space with the second cavity wall of the cavity 100; wherein the first gas distribution plate 102 and the second gas distribution plate 104 are provided with a plurality of gas holes. The ground electrode plate 106 and the radio frequency electrode plate 108 are located in the enclosed area formed by the first gas distribution plate 102 and the second gas distribution plate 104. By forming the gas inlet and distribution space and the gas outlet and distribution space on both sides of the cavity 100, the gas can be uniformly and quickly introduced and discharged. By providing a plurality of gas holes on the first gas distribution plate 102 and the second gas distribution plate 104, the gas flow in the cavity 100 is more stable and uniform. Thus, the gas pressure uniformity inside the cavity 100 is improved, and the distribution uniformity of the plasma generated by the radio frequency electric field generated by the radio frequency electrode plate 108 and the ground electrode plate 106 is improved, thereby improving the stability and uniformity of the plasma near the substrate to be processed, and thus improving the consistency of the substrate processing effect and the processing quality.
[0043] In one embodiment, the extension direction of the first gas distribution plate 102 and the second gas distribution plate 104 is a vertical direction.
[0044] By arranging one gas distribution space and one gas distribution plate on each side of the cavity 100, the gas can enter and leave the cavity 100 uniformly, and the gas pressure of the cavity 100 is uniform, so that the gas pressure near the substrate to be processed is consistent, thereby obtaining good inter wafer uniformity.
[0045] Specifically, when the first gas distribution plate 102 and the second gas distribution plate 104 extend in the vertical direction, in the gas inlet and distribution space, the gas enters from the gas inlet and flows along the first gas distribution plate 102 in the vertical direction, and then is uniformly distributed into the cavity 100 through the gas holes on the first gas distribution plate 102. Similarly, in the gas outlet and distribution space, the processed gas is collected through the gas holes on the second gas distribution plate 104 and flows in the vertical direction, and finally is discharged from the gas outlet.
[0046] In actual implementation, the gas inlet can be arranged on the wall of the cavity above the gas distribution space, or arranged on the wall of the cavity below the gas distribution space. The gas outlet can be arranged on the wall of the cavity above the gas distribution space, or arranged on the wall of the cavity below the gas distribution space.
[0047] In an example, the gas inlet can be arranged on the wall of the cavity below the gas distribution space. By arranging the gas inlet below the gas distribution space, the gas pressure can be uniform. Specifically, after the gas enters the gas distribution space through the gas inlet, the gas can flow from the bottom to the top, and be uniformly distributed into the cavity 100 through the gas holes on the first gas distribution plate 102. In this way, the gas can be fully and uniformly diffused to the entire processing area.
[0048] The gas outlet can be arranged on the wall of the cavity below the gas distribution space, so that the gas can be quickly discharged from the bottom of the gas distribution space, and the accumulation of the gas below the gas distribution space can be reduced, thereby making the gas pressure uniform.
[0049] In an example, when the first gas distribution plate 102 and the second gas distribution plate 104 extend in the vertical direction, the ground electrode plate 106 and the radio frequency electrode plate 108 can be arranged to extend horizontally in the enclosed area formed by the first gas distribution plate 102 and the second gas distribution plate 104.
[0050] The horizontally extending ground electrode plate 106 and the radio frequency electrode plate 108 can form a more uniform horizontal electric field in the cavity 100. Moreover, the combination of the vertical gas distribution plate and the horizontal electrode plate can form an effective gas-plasma interaction mode. The gas is uniformly distributed into the cavity 100 from the vertical gas distribution plate, and the more uniform horizontal electric field is responsible for generating more uniform plasma. The more uniform plasma can make each point on the substrate receive the same or similar plasma processing effect when processing the substrate, thereby improving the stability and consistency of the processing.
[0051] In an example, the number of gas holes on the first gas distribution plate 102 decreases along the direction of gravity, and the arrangement of the gas holes on the second gas distribution plate 104 is the same as that on the first gas distribution plate 102.
[0052] In this example, the arrangement of the gas holes on the gas distribution plate is not unique, and can be arranged according to specific conditions. In an example, the number of gas holes on the first gas distribution plate 102 can gradually decrease along the direction of gravity, that is, the arrangement density of the gas holes decreases along the direction of gravity. Alternatively, the arrangement density of the gas holes in the first region above the first gas distribution plate 102 can remain the same, and the arrangement density of the gas holes in the second region below the first gas distribution plate 102 can also remain the same, but the arrangement density of the gas holes in the first region is higher than that in the second region.
[0053] When the gas enters the gas distribution space from the gas inlet, due to the large number of gas holes above the first gas distribution plate 102, the gas can be quickly and uniformly distributed to the upper region of the cavity 100. As the gas flows upward and gradually diffuses, the gas distribution requirement of the lower region decreases, and therefore the number of gas holes also decreases, which helps to avoid excessive accumulation and waste of gas.
[0054] By gradually reducing the number of gas holes in the first gas distribution plate 102 in the direction of gravity, the flow path of the gas can be optimized. The upper region has a large number of gas holes, which provides a larger gas flow area and helps the gas to quickly enter the cavity 100 and be uniformly distributed. The lower region has a small number of gas holes, which can reduce excessive diffusion of the gas, thereby improving the flow efficiency of the gas.
[0055] The second gas distribution plate 104 serves as the gas outlet gas distribution plate, and the arrangement of the gas holes thereon is the same as that of the first gas distribution plate 102, which helps to maintain a similar gas distribution path during gas discharge, thereby making the gas flow and distribution in the entire cavity 100 relatively uniform.
[0056] In one embodiment, the size of the gas holes on the first gas distribution plate 102 decreases in the direction of gravity, and the arrangement of the gas holes on the second gas distribution plate 104 is the same as that of the first gas distribution plate 102.
[0057] The arrangement of the gas holes on the gas distribution plate is not unique and can be set according to specific circumstances. For example, the size of the gas holes on the first gas distribution plate 102 can gradually decrease in the direction of gravity. It can also be that the size of the gas holes in the first region above the first gas distribution plate 102 remains the same, and the size of the gas holes in the second region below the first gas distribution plate 102 also remains the same, but the size of the gas holes in the first region is higher than that in the second region. The arrangement of the gas holes on the second gas distribution plate 104 is the same as that of the first gas distribution plate 102, and will not be described here.
[0058] In this embodiment, by setting larger gas hole sizes in regions requiring higher gas flow (above the gas inlet and outlet gas distribution spaces) and smaller gas hole sizes in regions requiring less gas flow (below the gas inlet and outlet gas distribution spaces), the flow path and distribution characteristics of the gas can be further optimized.
[0059] In one embodiment, the size of the gas holes on the first gas distribution plate 102 decreases in the direction of gravity, and the number of gas holes on the first gas distribution plate 102 decreases. The arrangement of the gas holes on the second gas distribution plate 104 is the same as that of the first gas distribution plate 102.
[0060] In the gravity direction, the gas holes on the first gas distribution plate 102 gradually decrease in size and number, which can optimize the flow and distribution of the gas, so that the gas can efficiently and uniformly cover the processing area, and improve the uniformity of the gas pressure in the cavity 100.
[0061] Specifically, the gas holes on the first gas distribution plate 102 are relatively large in size and relatively large in number, which helps the gas to quickly enter the processing area and be uniformly distributed. As the gas flows in the gravity direction, the size of the gas holes gradually decreases, and the number of the gas holes also decreases accordingly, which can reduce the excessive diffusion of the gas and improve the flow efficiency of the gas.
[0062] The second gas distribution plate 104 is arranged in the same way as the first gas distribution plate 102, and also adopts the strategy of gradually reducing the size and number of the gas holes in the gravity direction. Not only does it maintain the continuity of the gas flow, but it also helps to maintain similar gas distribution characteristics during gas discharge, thereby ensuring that the gas flow and distribution in the entire cavity 100 are relatively uniform.
[0063] In one embodiment, the plasma processing device further comprises a support assembly 105. The support assembly 105 is arranged between the ground electrode plate 106 and the radio frequency electrode plate 108 for supporting the substrate to be processed.
[0064] The support assembly 105 can stably support the substrate to be processed, ensuring that the substrate remains stable during processing, thereby optimizing the interaction between the plasma and the substrate.
[0065] Further, the support assembly 105 can position the substrate to be processed between the ground electrode plate 106 and the radio frequency electrode plate 108, so that the plasma can be distributed on both sides of the substrate, thereby enabling double-sided processing of the substrate and improving processing efficiency.
[0066] Specifically, after the support assembly 105 supports the substrate to be processed, the plasma generated by the ground electrode plate 106 and the radio frequency electrode plate 108 can act on both the upper and lower sides of the substrate at the same time, thereby significantly improving the processing efficiency. This double-sided processing method not only shortens the processing time, but also improves the uniformity and consistency of the processing.
[0067] The installation method of the support assembly 105 is not unique. For example, the support assembly 105 can be installed on the third cavity wall of the cavity 100, which is different from the first cavity wall and the second cavity wall. The support assembly 105 can also be installed on the ground electrode plate 106 or the radio frequency electrode plate 108, and specifically can be selected from the ground electrode plate 106 or the radio frequency electrode plate 108, which is the lower electrode plate. On the basis of being able to position the substrate to be processed between the ground electrode plate 106 and the radio frequency electrode plate 108, it can be set according to specific circumstances and specific needs.
[0068] In one embodiment, the support assembly 105 comprises a plurality of support bodies 1051, which are spaced apart from each other.
[0069] By spacing apart the plurality of support bodies 1051, the spacing between the support bodies 1051 allows the gas (gas for generating plasma) to flow more freely, which on one hand improves the uniformity of the distribution of the plasma; the more uniformly distributed plasma can enable a more uniform processing effect on the side of the substrate to be processed which is in contact with the support bodies 1051; on the other hand, the spaced apart support bodies 1051 facilitate the taking and placing of the substrate.
[0070] The support bodies 1051 can be arranged on the lowermost electrode plates of the set of ground electrode plates 106 and the RF electrode plates 108.
[0071] The structure and material of the support bodies 1051 are not limited, as long as the above functions can be achieved. Exemplarily, the support bodies 1051 are in the shape of a strip or a column, to achieve stable support and optimized gas distribution. The side of the support bodies 1051 which is used to contact the substrate can be in the shape of a circle or a plane, to avoid electrostatic adsorption.
[0072] In actual implementation, the support bodies 1051 can have certain adjustability (e.g., can be disassembled), to adapt to substrates of different sizes and shapes. The position, number and spacing of the support bodies 1051 can be adjusted as needed, to ensure optimal support effect.
[0073] The number of the ground electrode plates 106 and the RF electrode plates 108 can be set according to actual needs, and the number of the ground electrode plates 106 and the RF electrode plates 108 is at least one, to achieve processing of one substrate on both sides.
[0074] In one embodiment, the number of the ground electrode plates 106 is at least two. One RF electrode plate 108 is arranged between the two ground electrode plates 106. The support assembly 105 is arranged between the ground electrode plates 106 and the RF electrode plate 108.
[0075] In Figure 1 In the embodiment shown in the figure, the number of the ground electrode plates 106 is at least two. One RF electrode plate 108 is arranged between the two ground electrode plates 106. The support assembly 105 is arranged between the ground electrode plates 106 and the RF electrode plate 108. Thus, two substrates can be processed at the same time, and each substrate can be processed on both sides at the same time, with high processing efficiency.
[0076] In other embodiments, there are two or more ground electrode plates 106, with a radio frequency electrode plate 108 disposed between every two ground electrode plates 106, and a support component 105 disposed between adjacent ground electrode plates 106 and radio frequency electrode plates 108. This allows for simultaneous front and back-side processing of multiple substrates.
[0077] For example, please see Figure 2 As shown, there are three ground electrode plates 106, with a radio frequency electrode plate 108 disposed between every two ground electrode plates 106, and a support component 105 disposed between adjacent ground electrode plates 106 and radio frequency electrode plates 108. This allows for simultaneous processing of both the front and back sides of four substrates, resulting in very high processing efficiency.
[0078] In actual implementation, factors such as the height of the cavity 100 can be taken into account to reasonably increase the grounding electrode plate 106 and the radio frequency electrode plate 108 in order to process more substrates at the same time.
[0079] In one embodiment, the plasma processing apparatus further includes a substrate stage 107. The substrate stage 107 is connected to a ground electrode plate 106 located at one end. The substrate stage 106 is used to change the position of the ground electrode plate 106 and the radio frequency electrode plate 108 when moved.
[0080] It should be noted that, in actual implementation, a "substrate handling port" is also provided on the cavity wall of the cavity 100, through which operators or mechanical devices for picking up and placing substrates (such as robotic arms) pick up and place substrates. However, when the plasma processing device needs to process multiple substrates simultaneously, since the support assembly 105 may be located in different positions within the cavity 100, the substrate handling port may not be able to directly meet the picking and placing needs of all substrates.
[0081] In this embodiment, by providing a movable substrate stage 107, the positions of the ground electrode plate 106 and the radio frequency electrode plate 108 change as the substrate stage 107 moves. This, in turn, moves each support component 105, thereby changing its position relative to the substrate operating port. Thus, even if the support component 105 is located deep within the cavity 100 or in a difficult-to-access location, it can be moved to the vicinity of the substrate operating port by moving the substrate stage 107. This facilitates placing the substrate to be processed on the support component 105 or removing a processed substrate from the support component 105.
[0082] It is also noted that the plasma processing device further comprises a grounding terminal and a radio frequency power terminal. The grounding terminal is used to connect the ground electrode plate 106 to the grounding system of the device to ensure the stability and safety of the plasma when the ground electrode plate 106 is connected to the grounding terminal. The radio frequency power terminal is used to connect the radio frequency electrode plate 108 to the radio frequency power source to provide the high frequency electric field required for generating the plasma when the radio frequency electrode plate 108 is connected to the radio frequency power terminal.
[0083] In actual application, the positions of the grounding terminal and the radio frequency power terminal can be fixed. When the substrate to be processed is placed on the support assembly 105, the positions of the ground electrode plate 106 and the radio frequency electrode plate 108 are changed by moving the substrate table 107, so that the ground electrode plate 106 is connected to the grounding terminal and the radio frequency electrode plate 108 is connected to the radio frequency power terminal.
[0084] When the substrate processing is completed, the substrate table 107 brings the substrate to the vicinity of the substrate operation port. At this time, the connection between the ground electrode plate 106 and the grounding terminal is disconnected, and the connection between the radio frequency electrode plate 108 and the radio frequency power terminal is disconnected, so as to avoid electrical accidents during the process of taking and placing the substrate.
[0085] In the embodiment, the movement of the substrate table 107 not only changes the positions of the support assembly 105 and the substrate, but also drives the corresponding movement of the ground electrode plate 106 and the radio frequency electrode plate 108, thereby realizing the flexibility and adaptability of electrical connection.
[0086] In one embodiment, as shown in Figure 3 The plasma processing device further comprises at least one coil 103, and the cavity 100 is located in the magnetic field generated by the coil 103.
[0087] It can be understood that the at least one coil 103 is further connected to a power source. When the power source applies current to the coil 103, the coil 103 generates a magnetic field, which can reduce the non-uniformity of the plasma in the cavity 100.
[0088] The number of coils 103 can be one or more, and the coils 103 can be arranged above the cavity 100 or arranged above and below the cavity 100 respectively. For example, the plasma processing device comprises two sets of coils 103 arranged in pairs. One coil 103 in each set is arranged above the cavity 100, and the other coil 103 is arranged below the cavity 100. The two coils 103 in each set can be concentric coils. Thus, a magnetic field in the vertical direction can be generated to improve the uniformity of the plasma in the entire cavity, thereby improving the consistency of the substrate processing.
[0089] In order to better understand the above embodiment, the following will be explained in detail in combination with a specific embodiment. Please refer toFigure 3 In one embodiment, the plasma processing device comprises a chamber 100, a first gas distribution plate 102 and a second gas distribution plate 104 arranged oppositely in vertical direction, a ground electrode plate 106 and a radio frequency electrode plate 108 arranged oppositely in horizontal direction, a support assembly 105 arranged between the ground electrode plate 106 and the radio frequency electrode plate 108, a movable substrate table 107, and two sets of paired coils 103.
[0090] The first gas distribution plate 102 forms a gas inlet distribution space with the first chamber wall of the chamber 100, and the gas inlet distribution space is provided with a gas inlet below. The second gas distribution plate 104 forms a gas outlet distribution space with the second chamber wall of the chamber 100, and the gas outlet distribution space is provided with a gas outlet below.
[0091] In the direction of gravity, the size of the gas holes on the first gas distribution plate 102 decreases, and the number of the gas holes on the first gas distribution plate 102 decreases. The arrangement of the gas holes on the second gas distribution plate 104 is the same as that of the gas holes on the first gas distribution plate 102. Thus, the flow of gas in the chamber 100 is more stable and uniform, and the uniformity of the gas pressure inside the chamber 100 is improved.
[0092] The number of the ground electrode plates 106 is two or more, and one radio frequency electrode plate 108 is arranged between every two ground electrode plates 106. The support assembly 105 is arranged between the adjacent ground electrode plate 106 and the radio frequency electrode plate 108, and the support assembly 105 is used to support the substrate. Thus, the plasma can be distributed on both sides of the substrate, and the double-sided processing of two or more substrates can be realized, and the processing efficiency is high.
[0093] The substrate table 107 is connected to the ground electrode plate 106 below the chamber 100. The substrate table 106 is used to change the positions of the ground electrode plate 106 and the radio frequency electrode plate 108 when moving. Thus, the movement of the substrate table 107 not only moves the support assembly 105 and the substrate to the position of the substrate operation port, but also drives the corresponding movement of the ground electrode plate 106 and the radio frequency electrode plate 108, realizing the flexibility and adaptability of electrical connection.
[0094] The two sets of paired coils 103 are arranged on the top and bottom of the chamber 100 outside, respectively, to generate a vertical magnetic field, and improve the plasma uniformity in the entire chamber 100.
[0095] Specifically, in operation, the gas is uniformly introduced into the chamber 100 through the gas inlet distribution space, and diffused to the entire chamber 100 through the gas holes on the gas inlet distribution plate 102. The radio frequency electrode plate 108 generates a high-frequency electric field under the action of the radio frequency power source, and excites the gas to form plasma. At the same time, the coils 103 are applied with current to generate a vertical magnetic field, and improve the plasma uniformity in the entire chamber 100.
[0096] The uniformly distributed plasma reacts with the front and back surfaces of the substrate to achieve the purposes of cleaning, modification, etching and other processing. The reacted gas and the unreacted gas are discharged from the cavity 100 through the gas outlet space.
[0097] The plasma processing device realizes uniform introduction and discharge of the gas through the design of the gas distribution plate, which helps to improve the uniformity of plasma processing. The support assembly 105 adopts the design of the support bodies 1051 arranged at intervals and arranged between the ground electrode plate 106 and the radio frequency electrode plate 108, so that the substrate can be processed on both sides, and the processing efficiency is improved.
[0098] The technical features of the above-described embodiments can be combined arbitrarily. In order to make the description simple, all possible combinations of the technical features in the above-described embodiments are not described, but as long as the combinations of the technical features do not contradict, they should be considered as the scope of the description.
[0099] The above-described embodiments only express several implementation manners of the application, the description is more specific and detailed, but it should not be understood as the limitation of the scope of the utility model patent. It should be pointed out that for ordinary skilled in the art, without departing from the concept of the application, a number of modifications and improvements can be made, which belong to the protection scope of the application. Therefore, the protection scope of the patent of the application should be subject to the appended claims.
Claims
1. A plasma processing apparatus, characterized by comprising: The utility model relates to a substrate support device, comprising: a cavity; a first air distribution plate and a second air distribution plate oppositely arranged in the cavity; the first air distribution plate and a first cavity wall of the cavity form an air inlet distribution space, and the second air distribution plate and a second cavity wall of the cavity form an air outlet distribution space; wherein a plurality of air holes are distributed on the first air distribution plate and the second air distribution plate; a ground electrode plate and a radio frequency electrode plate oppositely arranged in the cavity; the ground electrode plate and the radio frequency electrode plate are in the enclosed area formed by the first air distribution plate and the second air distribution plate.
2. The plasma processing apparatus of claim 1, wherein, The extension direction of the first air distribution plate and the second air distribution plate is the vertical direction.
3. The plasma processing apparatus of claim 2, wherein, The number of air holes on the first air distribution plate decreases along the direction of gravity, and the arrangement mode of the air holes on the second air distribution plate is the same as that of the first air distribution plate.
4. The plasma processing apparatus of claim 2, wherein, The size of the air holes on the first air distribution plate decreases along the direction of gravity, and the arrangement mode of the air holes on the second air distribution plate is the same as that of the first air distribution plate.
5. The plasma processing apparatus of claim 2, wherein, The extension direction of the ground electrode plate and the radio frequency electrode plate is the horizontal direction.
6. The plasma processing apparatus of any of claims 1-5, wherein, Further comprising: a support assembly arranged between the ground electrode plate and the radio frequency electrode plate, which is used to support the substrate.
7. The plasma processing apparatus of claim 6, wherein, The support assembly comprises a plurality of support bodies, and the plurality of support bodies are arranged at intervals.
8. The plasma processing apparatus of claim 6, wherein, The number of ground electrode plates is at least two; One radio frequency electrode plate is arranged between two ground electrode plates; a support assembly is arranged between the ground electrode plate and the radio frequency electrode plate.
9. The plasma processing apparatus of claim 6, wherein, Further comprising a substrate table, which is connected to the ground electrode plate at one end; the substrate table is used to change the position of the ground electrode plate and the radio frequency electrode plate when moving.
10. The plasma processing apparatus of claim 6, wherein, Further comprising at least one coil, and the cavity is located in the magnetic field generated by the coil.