Silicon wafer edge passivation structure
By setting a side protrusion structure and a passivation layer on the side of the solar panel, the problem of high recombination rate at the edge of the battery in the prior art is solved, and more efficient production and insulation performance are achieved.
Patent Information
- Application Number
- CN202422988854.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-05
- Publication Date
- 2025-12-19
- Estimated Expiration
- 2034-12-05
AI Technical Summary
The edge structure design of existing crystalline silicon solar cells is unreasonable, resulting in a high recombination rate that cannot be effectively reduced.
A side protrusion structure is provided on the side of the solar panel, and a passivation layer is provided on its exterior and reference surface. The passivation layer is preferably composed of a silicon oxide layer and a polycrystalline silicon layer, and the passivation layer is a multilayer film structure of aluminum oxide, silicon nitride and silicon oxynitride.
By altering the edge structure of the solar panel, the recombination rate is effectively reduced, production efficiency and insulation performance of the solar panel are improved, while also possessing good electrical properties and protective functions.
Smart Images
Figure CN223694237U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to the technical field of solar cell, especially relates to a silicon wafer edge passivation structure. BACKGROUND
[0002] With the rapid development of photovoltaic technology, the conversion efficiency of crystalline silicon solar cell is improved year by year. At present, TOPCon cell is outstanding because of high efficiency, mature industrial process and many advantages, many manufacturers in the industry begin to increase the research and development progress of the cell, but the prior art still has some deficiencies, the edge structure design of the existing cell is extremely unreasonable after the manufacturing is completed, therefore the prior art cannot effectively reduce the recombination rate of the cell edge. SUMMARY
[0003] The utility model discloses a silicon wafer edge passivation structure to solve the situation in the background art.
[0004] To achieve the above object, the utility model provides a silicon wafer edge passivation structure, which comprises a cell panel, a side edge protruding structure and a passivation layer, one side edge protruding structure is arranged on each of the two parallel side surfaces of the cell panel, the other two parallel side surfaces of the cell panel are reference surfaces, the end of the side edge protruding structure is arranged away from the adjacent reference surface, and the passivation layer is arranged outside the reference surface and the side edge protruding structure.
[0005] Preferably, the side edge protruding structure is composed of a silicon compound.
[0006] Preferably, the side edge protruding structure comprises a silicon oxide layer and a polysilicon layer, one silicon oxide layer is arranged on each of the two parallel side surfaces of the cell panel, the polysilicon layer is arranged outside the silicon oxide layer, and the passivation layer is arranged on the polysilicon layer and the reference surface.
[0007] Preferably, the length of the silicon oxide layer and the polysilicon layer is equal.
[0008] Preferably, the end of the polysilicon layer is arranged away from the adjacent reference surface.
[0009] Preferably, the distance between the end of the polysilicon layer and the adjacent reference surface is 1nm-1mm.
[0010] Preferably, the thickness of the polysilicon layer is 1nm-1um.
[0011] Preferably, the height of the silicon oxide layer and the polysilicon layer is equal and greater than the height of the cell panel.
[0012] Preferably, the thickness of the passivation layer is 1-10um.
[0013] Preferably, the passivation layer is a multilayer film structure composed of aluminum oxide, silicon nitride and silicon oxynitride.
[0014] The utility model discloses the beneficial effect is as follows:
[0015] The edge structure of the battery plate is changed by arranging the side edge protruding structure on the battery plate, and the recombination rate of the battery edge is effectively reduced. BRIEF DESCRIPTION OF DRAWINGS
[0016] Figure 1 It is the main body structure schematic diagram of the utility model.
[0017] In the figure: battery plate 1, side edge protruding structure 2, passivation layer 3, silicon oxide layer 4, polysilicon layer 5. DETAILED DESCRIPTION
[0018] In order to make the purpose, technical scheme and advantage of the utility model embodiment more clear, the technical scheme in the utility model embodiment will be described clearly and completely below in combination with the drawings in the utility model embodiment, and obviously, the described embodiment is a part of the embodiment of the utility model, not all the embodiment. Based on the embodiment in the utility model, all other embodiments obtained by the ordinary skill in the art without creative labor belong to the protection scope of the utility model.
[0019] In the description of the utility model, it is necessary to explain that, unless there is explicit provision and limitation, the term "installation", "connection" should be broad sense, for example, can be fixed connection, can be detachable connection, or integrally connected, can be mechanical connection, can be electrical connection, can be directly connected, can be indirectly connected through intermediate medium, can be the communication of two elements. For the ordinary skill in the art, the specific meaning of the above-mentioned terms in the utility model can be understood according to the specific circumstances.
[0020] Embodiment one: reference Figure 1 A silicon wafer edge passivation structure, comprising: battery plate 1, side edge protruding structure 2 and passivation layer 3, the two parallel sides of the battery plate 1 are each provided with a side edge protruding structure 2, the other two parallel sides of the battery plate 1 are reference surfaces, the end of the side edge protruding structure 2 is away from the adjacent reference surface, and the reference surface and the side edge protruding structure 2 are provided with a passivation layer 3.
[0021] The principle and beneficial effects of the above-mentioned scheme are as follows:
[0022] The side edge protruding structure 2 is arranged on the side of the battery plate 1, and the end of the side edge protruding structure 2 is arranged away from the adjacent reference surface; the reference surface and the outer side edge protruding structure 2 are provided with a passivation layer 3; the edge structure of the battery plate 1 is changed by arranging the side edge protruding structure 2 on the battery plate 1, so that the recombination rate of the battery edge is effectively reduced, and the battery plate 1 is easier to produce than the prior art.
[0023] Embodiment two: refer to Figure 1 The side edge protruding structure 2 is composed of a silicon compound. The principle and beneficial effects of the above scheme are:
[0024] The side edge protruding structure 2 composed of a silicon compound arranged on the side of the battery plate 1 can more effectively reduce the edge recombination rate.
[0025] Embodiment three: refer to Figure 1 The side edge protruding structure 2 includes: a silicon oxide layer 4 and a polysilicon layer 5; the two side surfaces of the battery plate 1 are each provided with a silicon oxide layer 4; the outer side edge protruding structure 2 is provided with a polysilicon layer 5; and the polysilicon layer 5 and the reference surface are provided with a passivation layer 3.
[0026] The length of the silicon oxide layer 4 and the polysilicon layer 5 is equal.
[0027] The end of the polysilicon layer 5 is arranged away from the adjacent reference surface.
[0028] The distance between the end of the polysilicon layer 5 and the adjacent reference surface is 1nm-1mm.
[0029] The thickness of the polysilicon layer 5 is 1nm-1μm.
[0030] The principle and beneficial effects of the above scheme are:
[0031] The silicon oxide layer 4 arranged on the side of the battery plate 1 can perform surface passivation on the edge of the battery plate, interface optimization on the side of the battery plate 1, further insulation treatment on the battery plate 1 as an insulating material, and support the polysilicon layer 5 through its good structural strength. The polysilicon layer 5 has excellent economic benefits and mature manufacturing process. Since the distance between the end of the polysilicon layer 5 and the adjacent reference surface is 1nm-1mm, the recombination rate is reduced while facilitating large-area application in the production of the battery plate 1, which has extremely high practicality.
[0032] Embodiment four: refer to Figure 1 The height of the silicon oxide layer 4 and the polysilicon layer 5 is equal and greater than the height of the battery plate 1.
[0033] The principle and beneficial effects of the above scheme are:
[0034] The height of the silicon oxide layer 4 and the polysilicon layer 5 is greater than the height of the cell panel 1, so that the finished cell not only has excellent electrical characteristics, but also the structure of the side surface can protect the cell.
[0035] Embodiment five: reference Figure 1 The thickness of the passivation layer 3 is 1-10 microns.
[0036] The passivation layer 3 is a multilayer film structure composed of aluminum oxide, silicon nitride and silicon oxynitride.
[0037] The principle and advantages of the above scheme are:
[0038] The multilayer film structure composed of aluminum oxide, silicon nitride and silicon oxynitride can effectively refract light, and further increase the passivation effect of the cell panel 1 on the basis of the initial passivation of the cell panel 1.
[0039] It is obvious for those skilled in the art that the present application is not limited to the details of the above exemplary embodiments, and can be implemented in other specific forms without departing from the spirit or essential characteristics of the present application. Therefore, from any point of view, the embodiments should be regarded as exemplary and non-limiting, the scope of the present application is defined by the appended claims rather than the above description, therefore all changes falling within the meaning and scope of the equivalent elements of the claims are intended to be included in the present application, any reference signs in the claims should not be regarded as limiting the claims involved.
Claims
1. A silicon wafer edge passivation structure, characterized by, The application relates to a solar cell panel, which comprises a solar cell panel (1), side edge protruding structures (2) and a passivation layer (3), wherein the solar cell panel (1) is provided with the side edge protruding structures (2) on two parallel sides, the other two parallel sides of the solar cell panel (1) are reference surfaces, the end of the side edge protruding structure (2) is away from the adjacent reference surface, and the reference surface and the side edge protruding structure (2) are provided with the passivation layer (3). The side edge protruding structure (2) is composed of a silicon compound.
2. The structure of claim 1, wherein The side edge protruding structure (2) comprises a silicon oxide layer (4) and a polysilicon layer (5), the solar cell panel (1) is provided with the silicon oxide layer (4) on two parallel sides, the silicon oxide layer (4) is provided with the polysilicon layer (5), and the polysilicon layer (5) and the reference surface are provided with the passivation layer (3).
3. The structure of claim 1, wherein the structure is formed by a process comprising: The length of the silicon oxide layer (4) and the polysilicon layer (5) is equal.
4. The structure of claim 3, wherein the silicon wafer is a <100> silicon wafer. The end of the polysilicon layer (5) is away from the adjacent reference surface.
5. The structure of claim 4, wherein the silicon wafer is a <100> oriented silicon wafer. The interval between the end of the polysilicon layer (5) and the adjacent reference surface is 1nm-1mm.
6. The structure of claim 5, wherein the silicon wafer is a <100> oriented silicon wafer. The thickness of the polysilicon layer (5) is 1nm-1um.
7. The structure of claim 6, wherein the silicon wafer is a <100> oriented silicon wafer. The height of the silicon oxide layer (4) and the polysilicon layer (5) is equal and greater than the height of the solar cell panel (1).
8. The structure of claim 7, wherein the silicon wafer is a <100> oriented silicon wafer. The thickness of the passivation layer (3) is 1-10um.
9. The structure of claim 3, wherein the silicon wafer is a <100> oriented silicon wafer. The passivation layer (3) is a multilayer film structure composed of aluminum oxide, silicon nitride and silicon oxynitride.
10. The structure of claim 9, wherein the silicon wafer is a <100> silicon wafer.