Semiconductor deposition chamber and semiconductor deposition equipment

Abstract

The embodiment of the utility model relates to the field of semiconductor deposition, and provides a semiconductor deposition chamber and semiconductor deposition equipment, the semiconductor deposition chamber comprises an air exhaust ring component, the air exhaust ring component is located in a cavity, the air exhaust ring component comprises a first air exhaust ring and a second air exhaust ring which are distributed in the radial direction, the second air exhaust ring is located between the shell and the first air exhaust ring. Wherein the first air exhaust ring is provided with a first hole, the second air exhaust ring is provided with a second hole, and the first aperture of the first hole is smaller than the second aperture of the second hole; the first moving part is connected with the first air exhaust ring, and the first moving part is used for enabling the first air exhaust ring to move up and down in the vertical direction; and the second moving part is connected with the second air exhaust ring, and the second moving part is used for enabling the second air exhaust ring to move up and down in the vertical direction. The semiconductor deposition chamber and the semiconductor deposition equipment provided by the embodiment of the utility model at least can improve the practicability of the semiconductor deposition equipment.

Description

TECHNICAL FIELD

[0001] The embodiment of the utility model relates to the field of semiconductor deposition, in particular to a semiconductor deposition chamber and semiconductor deposition equipment. BACKGROUND

[0002] Thin film deposition is an essential link in the integrated circuit manufacturing process. Thin film deposition technology is to attach one or more substances in a certain state to the surface of a substrate material by physical or chemical methods, thereby forming a thin film layer on the surface of the substrate material.

[0003] The preparation of thin films requires different technical principles, so that the thin film deposition equipment also requires different technical principles, and different deposition methods such as physics / chemistry complement each other. Thin film deposition processes are mainly divided into two categories: physical and chemical methods, 1) physical method: refers to the physical process of thermal evaporation or particle bombardment, such as sputtering of atoms on the surface of the material, to realize the transfer of material atoms from the source material to the surface of the substrate material. Physical methods include physical vapor deposition (PVD), spin coating, electro-deposition / electroplating (ECD / ECP), etc.; 2) chemical method: the vapor of gaseous or liquid reaction agent containing thin film elements is introduced into the process chamber in a reasonable gas flow, and a chemical reaction occurs on the surface of the substrate and a thin film is deposited on the surface of the substrate. Chemical methods include chemical vapor deposition (CVD) and epitaxy (EPI).

[0004] However, different wafer sizes and different process types require different electrode spacings and different gas flow field requirements, and require matching gas hole design. The prior art can only replace different versions of inner liners (i.e. suction rings) to adapt to the gas hole requirements under different process conditions, increasing the cost of the equipment. UTILITY MODEL CONTENT

[0005] The embodiment of the utility model provides a semiconductor deposition chamber and semiconductor deposition equipment, at least beneficial to improve the practicability of semiconductor deposition equipment.

[0006] According to some embodiments of the utility model, the utility model discloses a semiconductor deposition chamber, including: casing, the cavity is formed in the casing interior, gas inlet component, gas inlet component is located in the cavity, the exhaust ring component is located in the cavity, the exhaust ring component includes: the first exhaust ring of radial distribution and second exhaust ring, second exhaust ring is located between the casing and the first exhaust ring, wherein, the first exhaust ring has first hole, second exhaust ring has second hole, the first aperture of first hole is less than the second aperture of second hole, first moving part, first moving part is connected with the first exhaust ring, and first moving part is used to make the first exhaust ring moves up and down along vertical direction, second moving part, second moving part is connected with the second exhaust ring, and second moving part is used to make the second exhaust ring moves up and down along the vertical direction.

[0007] In some embodiments, further comprising: an exhaust port, the distribution density of the second hole close to the exhaust port is less than the distribution density of the second hole away from the exhaust port.

[0008] In some embodiments, the distance between two adjacent first holes of the first exhaust ring is inversely proportional to the distance between the first exhaust ring and the exhaust port, and / or the aperture of the first hole of the first exhaust ring is inversely proportional to the distance between the first exhaust ring and the exhaust port.

[0009] In some embodiments, the first exhaust ring and the second exhaust ring have a first cavity therebetween.

[0010] In some embodiments, the first hole and the second hole are staggered along the radial direction.

[0011] In some embodiments, the first exhaust ring and the second exhaust ring have a resilient structure therebetween, and the two sides of the resilient structure are respectively in abutment with the first exhaust ring and the second exhaust ring.

[0012] In some embodiments, further comprising: a first positioning structure for enabling the first moving part to drive the first exhaust ring to be in a first position, and when in the first position, the first exhaust ring blocks part of the second hole; a second positioning structure for enabling the first moving part to drive the first exhaust ring to be in a second position, and when in the second position, the first exhaust ring does not overlap with the second hole.

[0013] In some embodiments, the first hole and the second hole overlap along the radial direction.

[0014] In some embodiments, further comprising: at least one third pumping ring, third hole diameters of third holes of the at least one third pumping ring decrease along a first direction, any of the third hole diameters is smaller than the second hole diameter and larger than the first hole diameter; at least one third moving component, each of the third moving components is connected with each of the third pumping rings, the third moving components are used for moving the third pumping rings up and down along the vertical direction; wherein the first direction is a radial direction in which the second pumping ring points to the first pumping ring.

[0015] According to some embodiments of the present application, the present application provides a semiconductor deposition chamber on the other aspect, comprising: the semiconductor deposition chamber according to any one of the above embodiments.

[0016] The technical scheme provided by the present application has at least the following advantages:

[0017] In the semiconductor deposition chamber provided by the embodiments of the present application, the deposition chamber comprises a pumping ring component, a first moving component and a second moving component, wherein the pumping ring component comprises a first pumping ring and a second pumping ring, the first pumping ring is connected with the first moving component, the second pumping ring is connected with the second moving component, and the first hole diameter of the first holes of the first pumping ring is set to be smaller than the second hole diameter of the second holes of the second pumping ring, so that different pumping rings can be used in different processes, various processes can be flexibly adjusted and adapted, and work efficiency is improved. BRIEF DESCRIPTION OF DRAWINGS

[0018] One or more embodiments are exemplarily illustrated by the drawings in the corresponding drawings, and the exemplarily illustrations do not constitute limitations on the embodiments, unless specifically stated, the drawings in the drawings do not constitute proportional limitations; in order to more clearly illustrate the technical scheme in the embodiments of the present application or the prior art, the drawings needed to be used in the embodiments will be briefly introduced below, and obviously, the drawings in the following description can also obtain other drawings according to the drawings without creative labor for those skilled in the art.

[0019] Figure 1 A structural schematic view of the semiconductor deposition chamber provided by an embodiment of the present application is shown in the figure;

[0020] Figure 2 A structural schematic view of the first pumping ring in the semiconductor deposition chamber provided by an embodiment of the present application is shown in the figure;

[0021] Figure 3 A structural schematic view corresponding to another working state of the semiconductor deposition chamber provided by an embodiment of the present application is shown in the figure;

[0022] Figure 4 Another structure schematic view of the semiconductor deposition chamber provided by an embodiment of the present application is shown in FIG. 3.

[0023] Figure 5 Another structure schematic view of the semiconductor deposition chamber provided by an embodiment of the present application is shown in FIG. 3.

[0024] Figure 6 Another structure schematic view of the semiconductor deposition chamber provided by an embodiment of the present application is shown in FIG. 3.

[0025] Figure 7 Another structure schematic view of the semiconductor deposition chamber provided by an embodiment of the present application is shown in FIG. 3.

[0026] Figure 8 Another structure schematic view of the semiconductor deposition chamber provided by an embodiment of the present application is shown in FIG. 3. DETAILED DESCRIPTION

[0027] As known from the background art, in the current semiconductor deposition chamber, different pumping rings with different diameters are needed under different processes, and the pumping rings need to be replaced, which affects the work efficiency and work rhythm.

[0028] The semiconductor deposition chamber and the semiconductor deposition equipment provided by the embodiments of the present application can use different pumping rings under different process conditions by setting pumping rings with different diameters and connecting the pumping rings with different moving parts, thereby improving the practicability and work efficiency of the semiconductor deposition equipment.

[0029] In the description of the embodiments of the present application, the technical terms "first", "second", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "a plurality of" is two or more, unless otherwise explicitly specified.

[0030] In this document, the term "embodiment" means that the specific features, structures or characteristics described in connection with the embodiment can be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily mean the same embodiment, nor is it independent or alternative to other embodiments. The skilled person in the art explicitly and implicitly understands that the embodiments described in this document can be combined with other embodiments.

[0031] In the description of the embodiments of the utility model, the term "and / or" is only a kind of description of the association relationship of associated object, it can exist three kinds of relations, for example A and / or B, can indicate: there is A, there is A and B, there is B these three cases.In addition, the character " / " in this paper, generally indicates that the front and rear associated objects are a kind of "or" relationship.

[0032] In the description of the embodiments of the utility model, the term "multiple" refers to more than two (including two), and by analogy, "multiple groups" refers to more than two groups (including two groups), and "multiple pieces" refers to more than two pieces (including two pieces).

[0033] In the description of the embodiments of the utility model, the orientation or positional relationship indicated by the technical terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the embodiments of the utility model and simplifying the description, and therefore cannot be understood as a limitation on the embodiments of the utility model.

[0034] In the description of the embodiments of the utility model, unless otherwise explicitly specified and limited, the technical terms "mounting", "connection", "connection", "fixing" and the like should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the communication or interaction relationship between two elements. For ordinary skilled persons in the art, the specific meaning of the above terms in the embodiments of the utility model can be understood according to the specific circumstances.

[0035] In the drawings corresponding to the embodiments of the utility model, in order to better understand and facilitate the description, the thickness and area of the layer are enlarged.When describing one component (such as a layer, a film, a region or a substrate) on another component or on the surface of another component, the component can be "directly" on the surface of another component, or there can be a third component between the two components.On the contrary, when describing one component on the surface of another component or one component surface forming or being provided with another component, it is indicated that there is no third component between the two components.In addition, when describing that one component is "formed" on another component, it means that the component is not formed on the entire surface (or front surface) of another component, nor is it formed on the edge of the entire surface.

[0036] In the description of the embodiments of the utility model, when a certain component "comprises" another component, unless otherwise specified, other components are not excluded, and other components can also be further included. In addition, when a layer, film, region or plate and other components are referred to as "on / above" another component, it can be "directly on" another component (i.e. between another component surface and another component, no other components are present), or another component can be present therebetween. In addition, when a layer, film, region, plate and other components are "directly on" another component, or when a layer, film, region, plate and other components are on the surface of another component, it means that no other components are present therebetween.

[0037] The terms used in the description of various described embodiments herein are only used for describing specific embodiments, and are not intended to be limiting. As used in the description of various embodiments described and the appended claims, "the part" is also intended to include the plural form, unless the context clearly indicates otherwise. Among them, the components include layers, films, regions or plates and other components.

[0038] The various embodiments of the utility model will be described in detail below with reference to the accompanying drawings. However, those skilled in the art can understand that in various embodiments of the utility model, many technical details are proposed in order to enable the reader to better understand the utility model. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solutions claimed by the utility model can be implemented.

[0039] Figure 1 A structural schematic diagram of a semiconductor deposition chamber provided by an embodiment of the utility model is shown in the figure. Figure 2 A structural schematic diagram of a first pumping ring in a semiconductor deposition chamber provided by an embodiment of the utility model is shown in the figure. Figure 3 A structural schematic diagram corresponding to another working state of a semiconductor deposition chamber provided by an embodiment of the utility model is shown in the figure.

[0040] According to some embodiments of the utility model, the utility model embodiment provides a semiconductor deposition chamber, by setting a pumping ring component, a first moving component and a second moving component in the deposition chamber, wherein the pumping ring component comprises a first pumping ring and a second pumping ring, the first pumping ring is connected with the first moving component, the second pumping ring is connected with the second moving component, and the first aperture of the first hole of the first pumping ring is smaller than the second aperture of the second hole of the second pumping ring, so that different pumping rings can be used in different processes, so as to flexibly adjust and adapt to various processes, improve work efficiency.

[0041] Reference Figures 1 to 3 The semiconductor deposition chamber comprises a shell 100, and a cavity 101 is formed inside the shell 100. The cavity 101 is the main place for accommodating devices and thin film deposition reactions.

[0042] The semiconductor deposition chamber includes a gas inlet component 102 located in the cavity 101. The gas inlet component 102 is generally used to provide source gas for wafer deposition. The gas inlet component 102 includes a gas inlet (not labeled) located outside the housing 100 and a showerhead (not labeled) located in the cavity 101 for uniformly guiding the source gas.

[0043] In some embodiments, the gas inlet component 102 further includes a gas distribution structure for guiding the source gas from a small number of gas inlets to a large number of holes of the showerhead and improving the uniformity of the source gas flow.

[0044] In some embodiments, the gas distribution structure includes a plurality of mutually isolated shower cavities arranged in a horizontal direction. The gas inlets and the shower cavities are arranged in a one-to-one correspondence and have consistent distribution and consistent topography of the relative contact surfaces. The outer side surfaces of the gas inlets and the shower cavities are arc surfaces with a central angle of 90°. Different gas supply systems supply reaction gas to the corresponding shower cavities through the gas inlets.

[0045] In some embodiments, the materials of the showerhead and the gas distribution structure are preferably the same, such as metal materials, ceramics, quartz, and other corrosion-resistant materials that do not react with the reaction gas and are not corroded. The surfaces of the structures can be coated as needed, such as anodized.

[0046] The semiconductor deposition chamber includes a gas inlet component 102 located in the cavity 101. The gas inlet component 102 is generally used to provide source gas for wafer deposition. The gas inlet component 102 includes a gas inlet (not labeled) located outside the housing 100 and a showerhead (not labeled) located in the cavity 101 for uniformly guiding the source gas.

[0047] The gas ring is mainly used to control the gas flow inside the cavity, extract the by-products, and optimize the uniformity of film deposition. When the cavity is self-cleaning, the gas ring plays a role in extracting the reaction gas (such as fluoride).

[0048] The gas extraction ring can be a ceramic gas extraction ring, which is more resistant to acid and alkali corrosion. During semiconductor processing, the service life is longer. Secondly, the ceramic gas extraction ring is not easy to react with other substances, will not leave fine particles and charged charges on the contacted objects, will not produce metal ions, and will not contaminate semiconductor parts; during the heat treatment of the semiconductor, the ceramic gas extraction ring is less deformed by heat, reducing the deformation of the semiconductor parts during heat treatment.

[0049] It should be noted that the number of first holes 121 in the first gas extraction ring 111 and the first diameter d1 of the first holes 121 are not limited by the present application, and can be set by those skilled in the art according to specific needs, but it is necessary to ensure that the gas flow from the inside of the chamber to the outside is uniform and stable when the gas extraction pump extracts through the gas extraction ring, and that local combustion phenomena caused by the accumulation of high energy can be avoided when high-energy ions pass through the chamber. For example, the first gas extraction ring 111 has 12-48 circular gas extraction holes, and the diameter of the holes ranges from 1mm to 20mm.

[0050] Similarly, the number of second holes 122 in the second gas extraction ring 112 and the second diameter d2 of the second holes 122 are not limited by the present application, and can be set by those skilled in the art according to specific needs, but it is necessary to ensure that the gas flow from the inside of the chamber to the outside is uniform and stable when the gas extraction pump extracts through the gas extraction ring, and that local combustion phenomena caused by the accumulation of high energy can be avoided when high-energy ions pass through the chamber. For example, the second gas extraction ring 112 has 5-30 circular gas extraction holes, and the diameter of the holes ranges from 5mm to 48mm.

[0051] In some embodiments, the inner walls of the first holes 121 and the second holes 122 are rounded or the first holes 121 and the second holes 122 can be chamfered to connect the first gas extraction ring 111, the second gas extraction ring 112 and the gas extraction pump pipeline. When the gas extraction pump is working, a negative pressure is generated, and the gas in the space is uniformly extracted through the small holes on the circumference of the gas extraction ring, so that the chamber reaches a specified negative pressure value. During the thin film deposition process, when high-energy ions are introduced into the chamber, the rounded corners on the inside of the gas extraction ring can avoid local combustion phenomena caused by the accumulation of high energy.

[0052] In some embodiments, the first gas extraction ring 111 and the second gas extraction ring 112 are coaxially arranged, i.e. the height of the first gas extraction ring 111 is the same as that of the second gas extraction ring 112, and the top surfaces of the first gas extraction ring 111 and the second gas extraction ring 112 are flush. In this way, a fixing structure (not labeled) can be provided at the end of the first gas extraction ring 111 and the second gas extraction ring 112, so as to form an annular gas extraction channel between the first gas extraction ring 111, the second gas extraction ring 112 and the fixing structure.

[0053] ReferenceFigure 1 The semiconductor deposition chamber further comprises an exhaust port 103. The distribution density of the second holes 122 near the exhaust port 103 is less than the distribution density of the second holes 122 far from the exhaust port 103. The gas flow rate is fast in the region near the exhaust port 103 and is slow in the region far from the exhaust port 103. By changing the distribution density of the second holes 122 near the exhaust port 103 and the distribution density of the second holes 122 far from the exhaust port 103, the distribution density of the second holes 122 near the exhaust port 103 is made to be small, thereby reducing the gas flow rate on this side, increasing the gas flow rate on the side far from the exhaust port 103, and improving the uniformity of the gas flow field on the wafer surface.

[0054] Similarly, the distribution density of the first holes 121 near the exhaust port 103 is less than the distribution density of the first holes 121 far from the exhaust port 103. The gas flow rate is fast in the region near the exhaust port 103 and is slow in the region far from the exhaust port 103. By changing the distribution density of the first holes 121 near the exhaust port 103 and the distribution density of the first holes 121 far from the exhaust port 103, the distribution density of the first holes 121 near the exhaust port 103 is made to be small, thereby reducing the gas flow rate on this side, increasing the gas flow rate on the side far from the exhaust port 103, and improving the uniformity of the gas flow field on the wafer surface.

[0055] In some embodiments, the distance between two adjacent first holes 121 in the plurality of first holes 121 of the first exhaust ring 111 is inversely proportional to the distance between the two adjacent first holes 121 and the exhaust port 103. By setting the distance between two adjacent first holes 121 in the plurality of first holes 121 of the first exhaust ring 111 to be inversely proportional to the distance between the two adjacent first holes 121 and the exhaust port 103, the distribution density of the first holes 121 near the exhaust port 103 can be made to be less than the distribution density of the first holes 121 far from the exhaust port 103, thereby reducing the gas flow rate of the first holes 121 near the exhaust port 103, increasing the gas flow rate on the side far from the exhaust port 103, and improving the uniformity of the gas flow field on the wafer surface.

[0056] In some embodiments, the first hole diameter d1 of the plurality of first holes 121 of the first exhaust ring 111 is inversely proportional to the distance between the first hole diameter d1 and the exhaust port 103. By setting the first hole diameter d1 of the first holes 121 in the first exhaust ring 111 to be inversely proportional to the distance between the first hole diameter d1 and the exhaust port 103, the distribution density of the first holes 121 near the exhaust port 103 can be made to be less than the distribution density of the first holes 121 far from the exhaust port 103, thereby reducing the gas flow rate of the first holes 121 near the exhaust port 103, increasing the gas flow rate on the side far from the exhaust port 103, and improving the uniformity of the gas flow field on the wafer surface.

[0057] Specifically, in one embodiment, the distance between two adjacent first holes 121 of the first plurality of holes 121 of the first pumping ring 111 is inversely proportional to the distance between the two adjacent first holes 121 and the pumping port 103. In another embodiment, the diameter of the first plurality of holes 121 of the first pumping ring 111 is inversely proportional to the distance between the first plurality of holes 121 and the pumping port 103. In yet another embodiment, the distance between two adjacent first holes 121 of the first plurality of holes 121 of the first pumping ring 111 is inversely proportional to the distance between the two adjacent first holes 121 and the pumping port 103, and the diameter of the first plurality of holes 121 of the first pumping ring 111 is inversely proportional to the distance between the first plurality of holes 121 and the pumping port 103.

[0058] Similarly, the distance between two adjacent second holes 122 of the second plurality of holes 122 of the second pumping ring 112 is inversely proportional to the distance between the two adjacent second holes 122 and the pumping port 103, and / or the diameter of the second plurality of holes 122 of the second pumping ring 112 is inversely proportional to the distance between the second plurality of holes 122 and the pumping port 103.

[0059] Continuing to refer to Figure 1 , the first pumping ring 111 and the second pumping ring 112 have a first cavity 123 therebetween. The gas flow rate is balanced through the first cavity 123, thereby making the gas more uniform.

[0060] In some embodiments, the first holes 121 and the second holes 122 overlap in a radial direction X. The radial direction X refers to the direction of the first pumping ring 111 or the second pumping ring 112 pointing to the center of the circle. The first holes 121 and the second holes 122 overlap in the vertical direction.

[0061] In some embodiments, the first holes 121 and the second holes 122 overlap in a radial direction X. The radial direction X refers to the direction of the first pumping ring 111 or the second pumping ring 112 pointing to the center of the circle. The first holes 121 and the second holes 122 overlap in the vertical direction.

[0062] Figure 4 Another structural schematic view of a semiconductor deposition chamber according to an embodiment of the present application.

[0063] Referring to Figure 4 , the first holes 121 and the second holes 122 are misaligned in the radial direction X. The first holes 121 and the second holes 122 are misaligned with each other, so that the gas passing through the first holes 121 is drawn away by the second pumping ring 112 via the first pumping ring 111 and the first cavity 123, thereby increasing the length of the flow path and making the gas flow rate more uniform.

[0064] In some embodiments, the thickness of the first pumping ring 111 ranges from 0.5 cm to 5 cm. The first pumping ring 111 has a larger thickness, so as to avoid the problem of breakage in actual use, and the flow channel of the first pumping ring 111 is also more appropriate, so as to improve the uniformity of the flow rate of the gas.

[0065] The thickness of the first pumping ring 111 can be 0.5 cm, 0.8 cm, 1.3 cm, 1.6 cm, 2.1 cm, 2.9 cm, 3.6 cm, 4.3 cm, or 5 cm.

[0066] Similarly, the thickness of the second pumping ring 112 ranges from 0.5 cm to 5 cm. The thickness of the second pumping ring 112 can be 0.5 cm, 0.8 cm, 1.3 cm, 1.6 cm, 2.1 cm, 2.9 cm, 3.6 cm, 4.3 cm, or 5 cm.

[0067] With reference to Figure 1 , the semiconductor deposition chamber comprises a first moving part 131 connected to the first pumping ring 111, and the first moving part 131 is used to move the first pumping ring 111 up and down along the vertical direction.

[0068] The first moving part 131 can be a telescopic rod or any movable part. The first moving part 131 can be driven by a gas pump, a gear, or any driving structure to be in different positions under specified parameters. For example Figure 1 , the first position shown and Figure 3 , the second position shown. When the first moving part 131 is in the first position, the pumping ring corresponding to the pumping port 103 is mainly the first pumping ring 111, and then the pumping pump pumps the cavity 101 with the size of the first hole 121 corresponding to the first pumping ring 111. When the second moving part 132 is in the second position, the pumping ring corresponding to the pumping port 103 is mainly the second pumping ring 112, and then the pumping pump pumps the cavity 101 with the size of the second hole 122 corresponding to the second pumping ring 112.

[0069] With reference to Figure 1 , the semiconductor deposition chamber comprises a second moving part 132 connected to the second pumping ring 112, and the second moving part 132 is used to move the second pumping ring 112 up and down along the vertical direction.

[0070] In some embodiments, the first moving part 131 can be a telescopic rod or any movable part. The first moving part 131 can be driven by a gas pump, a gear, or any driving structure to be in different positions under specified parameters.

[0071] Figure 5 Another structure schematic view of the semiconductor deposition chamber is provided for an embodiment of the utility model.

[0072] Reference Figure 5 The semiconductor deposition chamber further comprises: at least one third pumping ring 113, third hole diameters d3 of third holes 124 of the at least one third pumping ring 113 decrease along a first direction, any third hole diameter d3 is smaller than the second hole diameter d2 and larger than the first hole diameter d1, at least one third moving component 133, each third moving component 133 is connected with each third pumping ring 113, and the third moving component 133 is used for moving the third pumping ring 113 up and down along a vertical direction, wherein the first direction is a radial direction in which the second pumping ring 112 points to the first pumping ring 111. By setting the first pumping ring 111, the second pumping ring 112 and the plurality of third pumping rings 113, a plurality of pumping rings can be arranged in the semiconductor deposition chamber, so as to cope with different processes and specify corresponding pumping rings, thereby improving flexibility and practicality of the semiconductor equipment.

[0073] Reference Figure 1 The semiconductor deposition chamber comprises: a base 105 located at the bottom of the cavity 101, and the base 105 is used for placing a wafer.

[0074] In the semiconductor deposition chamber provided by the embodiment of the utility model, the deposition chamber comprises a pumping ring component 110, a first moving component 131 and a second moving component 132, wherein the pumping ring component 110 comprises a first pumping ring 111 and a second pumping ring 112, the first pumping ring 111 is connected with the first moving component 131, the second pumping ring 112 is connected with the second moving component 132, and the first hole diameter d1 of the first holes 121 of the first pumping ring 111 is set to be smaller than the second hole diameter d2 of the second holes 122 of the second pumping ring 112, so that different pumping rings can be used in different processes, various processes can be flexibly adjusted and adapted, and work efficiency is improved.

[0075] Correspondingly, another embodiment of the application provides a semiconductor deposition chamber, which is different from the above-mentioned embodiment in that there is no first cavity between the first pumping ring and the second pumping ring, and the same or corresponding technical features of the above-mentioned embodiment are not described in detail here.

[0076] Figure 6 A structure schematic view of the semiconductor deposition chamber is provided for another embodiment of the utility model. Figure 7 Another structure schematic view of the semiconductor deposition chamber is provided for another embodiment of the utility model. Figure 8 Another structure schematic view of the semiconductor deposition chamber is provided for another working state of another embodiment of the utility model.

[0077] Reference Figures 5 to 8 The semiconductor deposition chamber comprises a shell 200, and a cavity 201 is formed inside the shell 200. The semiconductor deposition chamber comprises a gas inlet component 202 located in the cavity 201. The semiconductor deposition chamber comprises an exhaust ring component 210 located in the cavity 201, and the exhaust ring component 210 comprises a first exhaust ring 211 distributed in a radial direction and a second exhaust ring 212 located between the shell 200 and the first exhaust ring 211. The first exhaust ring 211 has a first hole 221, and the second exhaust ring 212 has a second hole 222. The first hole 221 has a first hole diameter d1 smaller than a second hole diameter d2 of the second hole 222. The semiconductor deposition chamber comprises a first moving component 231 connected to the first exhaust ring 211, and the first moving component 231 is used to move the first exhaust ring 211 up and down along a vertical direction. The semiconductor deposition chamber comprises a second moving component 232 connected to the second exhaust ring 212, and the second moving component 232 is used to move the second exhaust ring 212 up and down along the vertical direction.

[0078] In some embodiments, the first exhaust ring 211 and the second exhaust ring 212 have an elastic structure 224 abutting against the first exhaust ring 211 and the second exhaust ring 212 on both sides of the elastic structure 224. The elastic structure 224 makes the sealing between the first exhaust ring 211 and the second exhaust ring 212 better, thereby saving the space occupied by the first cavity 201 or ensuring better airtightness and improving work efficiency.

[0079] The semiconductor deposition chamber further comprises a first positioning structure (not shown) for enabling the first moving component 231 to drive the first exhaust ring 211 to be in a first position, and when in the first position, the first exhaust ring 211 blocks part of the second hole 222. The semiconductor deposition chamber further comprises a second positioning structure (not shown) for enabling the first moving component 231 to drive the first exhaust ring 211 to be in a second position, and when in the second position, the first exhaust ring 211 does not overlap with the second hole 222. By deforming the first exhaust ring 211 and the second exhaust ring 212 in different positions, the two exhaust rings can realize three states, thereby reducing the number of exhaust rings, saving costs, and improving the integration of the chamber.

[0080] wherein, Figure 7 is a structural schematic view of the semiconductor deposition chamber when the first exhaust ring 211 is in the first position, Figure 8 is a structural schematic view of the semiconductor deposition chamber when the first exhaust ring 211 is in the second position.

[0081] In some embodiments, the first positioning structure and the second positioning structure can be displacement sensors or light sensors, etc., which detect the position of the first moving structure to determine the position of the first pumping ring 211 connected thereto, thereby identifying the fourth aperture size d4 of the fourth hole surrounded by the first pumping ring 211 and the second pumping ring 212.

[0082] The first hole 212 and the second hole 222 overlap in the radial direction X.

[0083] In some embodiments, the semiconductor deposition chamber further comprises a pumping port 203. The distribution density of the second holes 222 close to the pumping port 203 is smaller than that of the second holes 222 away from the pumping port 203. The distribution density of the first holes 221 close to the pumping port 203 is smaller than that of the first holes 221 away from the pumping port 203.

[0084] In some embodiments, the distance between two adjacent first holes 221 of the first pumping ring 211 is inversely proportional to the distance between the first pumping ring 211 and the pumping port 203, and / or the aperture size of the first holes 221 of the first pumping ring 211 is inversely proportional to the distance between the first pumping ring 211 and the pumping port 203. The distance between two adjacent second holes 222 of the second pumping ring 212 is inversely proportional to the distance between the second pumping ring 212 and the pumping port 203, and / or the aperture size of the second holes 222 of the second pumping ring 212 is inversely proportional to the distance between the second pumping ring 212 and the pumping port 203.

[0085] The semiconductor deposition chamber comprises a base 205 located at the bottom of the cavity 201, and the base 205 is used to place a wafer.

[0086] In the semiconductor deposition chamber provided by the embodiments of the present application, the deposition chamber comprises a pumping ring component 210, a first moving component 231 and a second moving component 232, wherein the pumping ring component 210 comprises a first pumping ring 211 and a second pumping ring 212, the first pumping ring 211 is connected with the first moving component 231, the second pumping ring 212 is connected with the second moving component 232, the first aperture size d1 of the first hole 212 of the first pumping ring 211 is set to be smaller than the second aperture size d2 of the second hole 222 of the second pumping ring 212, and the first pumping ring 211 can be in a first position and a second position, so that different pumping rings can be used in different processes, more working states can be set with fewer pumping rings, various processes can be flexibly adjusted and adapted, and working efficiency is improved.

[0087] According to some embodiments of the present application, the semiconductor deposition equipment provided by the embodiments of the present application comprises the semiconductor deposition chamber according to any one of the above embodiments.

[0088] In some embodiments, the semiconductor deposition apparatus can be a physical vapor deposition apparatus or a chemical vapor deposition apparatus, such as a low pressure chemical vapor deposition apparatus, a plasma enhanced chemical vapor deposition apparatus, or an atomic layer deposition apparatus, etc.

[0089] Those skilled in the art can understand that the above-mentioned embodiments are specific embodiments for realizing the present application, and in actual application, various changes can be made in form and details without departing from the spirit and scope of the present application. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present application, therefore the protection scope of the present application should be limited by the scope defined in the claims.

Claims

1. A semiconductor deposition chamber, comprising: The application relates to a semiconductor deposition chamber. The application relates to a semiconductor deposition chamber. The application relates to a semiconductor deposition chamber. The application relates to a semiconductor deposition chamber. The application relates to a semiconductor deposition chamber. The application relates to a semiconductor deposition chamber.

2. The semiconductor deposition chamber of claim 1, wherein, The application relates to a semiconductor deposition chamber. The application relates to a semiconductor deposition chamber.

3. The semiconductor deposition chamber of claim 2, wherein, The application relates to a semiconductor deposition chamber.

4. The semiconductor deposition chamber of claim 1, wherein, The application relates to a semiconductor deposition chamber.

5. The semiconductor deposition chamber of claim 4, wherein, The application relates to a semiconductor deposition chamber.

6. The semiconductor deposition chamber of claim 1, wherein, The application relates to a semiconductor deposition chamber.

7. The semiconductor deposition chamber of claim 6, wherein, The application relates to a semiconductor deposition chamber. The application relates to a semiconductor deposition chamber.

8. The semiconductor deposition chamber of any of claims 1, 4, or 6, wherein, The application relates to a semiconductor deposition chamber.

9. The semiconductor deposition chamber of claim 1, wherein, The application relates to a semiconductor deposition chamber. The application relates to a semiconductor deposition chamber. The application relates to a semiconductor deposition chamber. The application relates to a semiconductor deposition chamber. The application relates to a semiconductor deposition chamber.

10. A semiconductor deposition apparatus, characterized by, The application relates to a semiconductor deposition chamber. The application relates to a semiconductor deposition chamber. The application relates to a semiconductor deposition chamber. The application relates to a semiconductor deposition chamber. The application relates to a semiconductor deposition chamber. The application relates to a semiconductor deposition chamber. The application relates to a semiconductor deposition chamber. The application relates to a semiconductor deposition chamber. The application relates to a semiconductor deposition chamber. The application relates to a semiconductor deposition chamber. The application relates to a semiconductor deposition chamber. The application relates to a semiconductor deposition chamber. The application relates to a semiconductor deposition chamber. The application relates to a semiconductor deposition chamber. 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