Testing device and testing system

Abstract

The utility model relates to the field of testing, in particular to a testing device and a testing system, in the testing device, a first load end of a phase-shifted full-bridge unit is connected to a first end of a primary winding of each transformer, and a second load end of the phase-shifted full-bridge unit is connected to a second end of the primary winding of each transformer; the phase-shifted full-bridge unit is used for converting direct-current voltage output by the direct-current power source into alternating-current voltage, secondary windings of all the transformers are connected to the first testing end and the second testing end of the corresponding testing circuit, and the first testing end and the second testing end are used for outputting testing signals to test the corresponding testing circuit. The positive feedback end of each test circuit is connected to the second end of the feedback module, and the negative feedback end of each test circuit is connected to the negative electrode of the DC power supply. According to the embodiment of the utility model, the aging test can be carried out on a plurality of test circuits, and the device has the characteristics of low equipment complexity and cost.

Description

TECHNICAL FIELD

[0001] The utility model relates to test technical field especially relates to a test device and test system. BACKGROUND

[0002] With the urgent demand for renewable energy worldwide, photovoltaic power generation as a clean, efficient and sustainable energy form has received unprecedented attention and rapid development. Photovoltaic power generation system uses photovoltaic effect to convert light energy into electrical energy through solar panels, and the boost module is responsible for boosting the direct current generated by the photovoltaic module to the voltage level suitable for grid connection or energy storage device. In the photovoltaic boost module, the application of silicon carbide (SiC) material brings a new breakthrough in efficiency and performance.

[0003] Silicon carbide (SiC) as a new type of semiconductor material has excellent physical and chemical properties, such as high hardness, high melting point, high thermal conductivity and low resistivity. Compared with traditional silicon (Si) material, SiC material shows higher efficiency and longer service life in high voltage, high temperature and high frequency environment. Therefore, the application of SiC material in photovoltaic boost module has significant advantages. As the core of photovoltaic boost module, silicon carbide devices have higher requirements for their reliability and stability.

[0004] Therefore, it is extremely important to perform aging and reliability testing on the silicon carbide photovoltaic boost module after mass production. INVENTION CONTENTS

[0005] According to an aspect of the utility model, a test device is provided, the test device includes direct current power supply, high frequency variable pressure module, feedback module, the high frequency variable pressure module includes phase shift full bridge unit and at least one transformer, wherein,

[0006] The positive and negative poles of the direct current power supply are connected to the positive and negative voltage input terminals of the phase shift full bridge unit respectively, and the positive pole of the direct current power supply is also connected to the first end of the feedback module,

[0007] The first load end of the phase shift full bridge unit is connected to the first end of the primary winding of each transformer, and the second load end of the phase shift full bridge unit is connected to the second end of the primary winding of each transformer, and the phase shift full bridge unit is used to convert the direct current voltage output by the direct current power supply into alternating voltage,

[0008] Each transformer is used for aging test on each test circuit respectively, wherein the first end of the secondary winding of each transformer is connected to the first test end of the corresponding test circuit, and the second end of the secondary winding of each transformer is connected to the second test end of the corresponding test circuit, and the first test end and the second test end are used for outputting test signals to test the corresponding test circuit,

[0009] The positive feedback end of each test circuit is connected to the second end of the feedback module, and the negative feedback end of each test circuit is connected to the negative pole of the direct current power supply.

[0010] In a possible implementation, the feedback module comprises a feedback filter inductor, a first end of the feedback filter inductor serving as the first end of the feedback module, and a second end of the feedback filter inductor serving as the second end of the feedback module.

[0011] In a possible implementation, the test circuit comprises a first branch and a second branch, a first end of the first branch and a first end of the second branch being connected to serve as the positive feedback end of the test circuit, and a second end of the first branch and a second end of the second branch being connected to serve as the negative feedback end of the test circuit, wherein,

[0012] The first branch and the second branch each comprise a diode and a transistor, and for any one of the first branch and the second branch: one end of the diode and a drain or a source of the transistor are connected to serve as a test end of the test circuit, the other end of the diode serves as the positive feedback end of the test circuit or the negative feedback end of the test circuit, and the source or the drain of the transistor serves as the negative feedback end of the test circuit or the positive feedback end of the test circuit.

[0013] In a possible implementation, the first branch comprises a first branch diode and a first branch transistor, a positive pole of the first branch diode and a drain of the first branch transistor being connected to serve as a first test end of the test circuit,

[0014] the second branch comprises a second branch diode and a second branch transistor, a positive pole of the second branch diode and a drain of the second branch transistor being connected to serve as a second test end of the test circuit,

[0015] a negative pole of the first branch diode and a negative pole of the second branch diode being connected to serve as the positive feedback end of the test circuit,

[0016] a source of the second branch transistor and a source of the first branch transistor being connected to serve as the negative feedback end of the test circuit.

[0017] In a possible implementation, the phase-shifted full-bridge unit comprises a first full-bridge transistor, a second full-bridge transistor, a third full-bridge transistor, and a fourth full-bridge transistor, wherein,

[0018] a drain of the first full-bridge transistor and a drain of the second full-bridge transistor are connected to serve as a positive voltage input end of the phase-shifted full-bridge unit,

[0019] The source of the third full-bridge transistor and the source of the fourth full-bridge transistor are connected as a negative voltage input end of the phase-shifted full-bridge unit,

[0020] The source of the first full-bridge transistor and the drain of the third full-bridge transistor are connected as a first load end of the phase-shifted full-bridge unit,

[0021] The source of the second full-bridge transistor and the drain of the fourth full-bridge transistor are connected as a second load end of the phase-shifted full-bridge unit.

[0022] In a possible implementation, the high-frequency transformer module further comprises a signal generation unit, which is configured to generate a switching control signal for each full-bridge transistor of the phase-shifted full-bridge unit, so as to control the phase-shifted full-bridge unit to perform high-frequency conversion on the direct-current voltage.

[0023] In a possible implementation, the signal generation unit is further configured to:

[0024] control a phase-shift angle of the phase-shifted full-bridge unit, so as to adjust a test current flowing into the first test end and the second test end.

[0025] In a possible implementation, a product of a ratio of a secondary winding voltage to a primary winding voltage of the transformer and a direct-current voltage output by the direct-current power supply is greater than or equal to a normal working voltage of the test circuit.

[0026] In a possible implementation, the ratio of the secondary winding voltage to the primary winding voltage of the transformer is greater than or equal to 2.

[0027] According to an aspect of the present application, a test system is provided, which comprises the test device.

[0028] The test device provided in the present application can convert a direct-current voltage into an alternating-current voltage and perform voltage boosting through the high-frequency transformer module, can perform aging test on multiple test circuits, and can output a high-voltage and large-current test signal at both ends of the stimulating winding of each transformer.

[0029] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, but not limiting. Other features and aspects of the present application will become apparent from the following detailed description of exemplary embodiments with reference to the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0030] The drawings incorporated in and forming a part of the specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the application.

[0031] Figure 1 A schematic diagram of a test device according to an embodiment of the present application is shown.

[0032] Figure 2 A schematic diagram of a test device according to an embodiment of the present application is shown.

[0033] Figure 3a A schematic diagram of a photovoltaic boost module is shown.

[0034] Figure 3b A schematic diagram of a current aging test module is shown.

[0035] Figure 4a 、 Figure 4b A voltage waveform diagram and a current waveform diagram of a diode are shown, respectively, which are obtained by simulating the operation of the test device.

[0036] Figure 5a 、 Figure 5b A voltage waveform diagram and a current waveform diagram of a transistor are shown, respectively, which are obtained by simulating the operation of the test device. DETAILED DESCRIPTION

[0037] Various exemplary embodiments, features, and aspects of the present application will be described herein below with reference to the drawings. The same reference numbers in different drawings represent the same or similar elements. Although various aspects of the embodiments are illustrated in the drawings, the drawings are not necessarily drawn to scale unless specifically indicated.

[0038] In the description of the present application, it should be understood that the terms "length", "width", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application.

[0039] In addition, the terms "first", "second", "third", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second", etc. can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise specifically limited.

[0040] In the present application, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connecting", "fixing" and the like should be understood in a broad sense, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship between two elements. For ordinary skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0041] The special word "exemplary" here means "as an example, embodiment or illustrative". Any embodiment described as "exemplary" here does not necessarily mean that it is superior or better than other embodiments.

[0042] In the present application, the term "and / or" is only a description of the association relationship between the associated objects, which means that there can be three kinds of relationships, for example, A and / or B, which can mean that A exists alone, A and B exist together, and B exists alone. In addition, the term "at least one" in the present application means any one of the plurality or any combination of at least two of the plurality, for example, including at least one of A, B and C, which means including any one or more elements selected from the set consisting of A, B and C.

[0043] In addition, in order to better illustrate the present application, a large number of specific details are given in the specific embodiments below. Those skilled in the art should understand that without certain specific details, the present application can also be implemented. In some examples, methods, means, elements and circuits familiar to those skilled in the art are not described in detail, in order to highlight the main idea of the present application.

[0044] Please refer to Figure 1 , Figure 1 The present application shows a schematic diagram of a test device according to an embodiment of the present application.

[0045] As Figure 1 shown, the test device comprises a direct current power supply 10, a high-frequency transformer module 20, a feedback module 30, the high-frequency transformer module 20 comprises a phase-shifted full-bridge unit 210 and at least one transformer 220, wherein,

[0046] The positive and negative poles of the direct current power supply 10 are respectively connected to the positive and negative voltage input ends of the phase-shifted full-bridge unit 210, and the positive pole of the direct current power supply 10 is also connected to the first end of the feedback module 30,

[0047] The first load end of the phase-shift full-bridge unit 210 is connected to the first end of the primary winding of each transformer 220, and the second load end of the phase-shift full-bridge unit 210 is connected to the second end of the primary winding of each transformer 220, and the phase-shift full-bridge unit 210 is used to convert the DC voltage output by the DC power supply 10 into an AC voltage,

[0048] Each transformer 220 is used to perform an aging test on each test circuit 40, wherein the first end of the secondary winding of each transformer 220 is connected to the first test end of the corresponding test circuit 40, and the second end of the secondary winding of each transformer 220 is connected to the second test end of the corresponding test circuit 40, and the first test end and the second test end are used to output a test signal to test the corresponding test circuit 40,

[0049] The positive feedback end of each test circuit 40 is connected to the second end of the feedback module 30, and the negative feedback end of each test circuit 40 is connected to the negative electrode of the DC power supply 10.

[0050] The test device of the embodiment of the utility model, through high frequency transformer module 20, DC voltage is converted into AC voltage and is boosted, can carry out aging test to multiple test circuit 40, and the two ends of the stimulating winding of each transformer 220 can output high voltage, large current test signal, and because of the existence of transformer 220, input power supply, load need not be set to higher power, compared with the related art, the equipment complexity and cost are reduced.

[0051] The embodiment of the utility model does not limit the specific implementation mode of the DC power supply 10, the high frequency transformer module 20, the feedback module 30 and the phase-shift full-bridge unit 210, and a person skilled in the art can realize it according to the actual situation and needs by adopting a suitable technical scheme, and it should be understood that each module and unit can be realized by a hardware circuit, and the specific number of transformers 220 is not limited in the embodiment of the utility model, and the number of transformers 220 can correspond to the number of test circuits 40, and a person skilled in the art can set it according to the actual situation and needs.

[0052] The embodiment of the utility model does not limit the transformation ratio of each transformer 220, and a person skilled in the art can set it according to the actual situation and needs, as long as the DC voltage V1 output by the DC power supply 10 reaches (is greater than or equal to) the normal working voltage of the to-be-tested circuit in the real system after being boosted (αxV1), and in one possible implementation mode, the ratio α of the ratio of the secondary winding voltage to the primary winding voltage of the transformer 220 is greater than or equal to 2. In one possible implementation mode, if the DC voltage is 500V and the working voltage is 1500V, the ratio of the ratio of the secondary winding voltage to the primary winding voltage of the transformer 220 is 3.

[0053] Please refer to Figure 2 , Figure 2 a schematic diagram of a test device according to an embodiment of the present application is shown.

[0054] In a possible implementation, as shown in Figure 2 , the feedback module 30 can include a feedback filter inductor L1, a first end of the feedback filter inductor L1 as a first end of the feedback module 30, and a second end of the feedback filter inductor L1 as a second end of the feedback module 30. The feedback filter inductor L1 can filter the feedback signal (the electrical signal flowing from the test circuit 40 to the DC power supply).

[0055] For example, as shown in Figure 2 , the DC power supply 10 can include a battery assembly, which can include one or more battery cells, which can be any one of a lithium-ion battery, a lithium polymer battery, a lead-acid battery, etc., and the present application does not limit the same. The present application does not limit the voltage of the DC power supply 10, and a person skilled in the art can set it according to the actual situation and needs, for example, the DC power supply 10 can be a low-voltage power supply of about 500V.

[0056] In a possible implementation, as shown in Figure 2 , the test circuit 40 can include a first branch 410 and a second branch 420, a first end of the first branch 410 and a first end of the second branch 420 are connected as a positive feedback end of the test circuit 40, and a second end of the first branch 410 and a second end of the second branch 420 are connected as a negative feedback end of the test circuit 40, wherein

[0057] The first branch 410 and the second branch 420 each include a diode (such as a silicon carbide Schottky diode) and a transistor (such as a silicon carbide MOSFET). For any one of the first branch 410 and the second branch 420: one end of the diode is connected to the drain or source of the transistor as a test end of the test circuit 40, the other end of the diode is connected to the positive feedback end of the test circuit 40 or the negative feedback end of the test circuit 40, and the source or drain of the transistor is connected to the negative feedback end of the test circuit 40 or the positive feedback end of the test circuit 40.

[0058] In a possible implementation, as shown in Figure 2 , the first branch 410 can include a first branch diode D1 and a first branch transistor Q40, a positive electrode of the first branch diode D1 and a drain of the first branch transistor Q40 are connected as a first test end of the test circuit 40,

[0059] The second branch 420 includes a second branch diode D2 and a second branch transistor Q41, the positive pole of the second branch diode D2 is connected with the drain of the second branch transistor Q41 as the second test end of the test circuit 40,

[0060] The negative pole of the first branch diode D1 is connected with the negative pole of the second branch diode D2 as the positive feedback end of the test circuit 40,

[0061] The source of the second branch transistor Q41 is connected with the source of the first branch transistor Q40 as the negative feedback end of the test circuit 40.

[0062] Referring to Figure 3a , Figure 3a A schematic diagram of a photovoltaic boost module is shown.

[0063] Referring to Figure 3b , Figure 3b A schematic diagram of a current aging test module is shown.

[0064] As Figure 3b shown, the aging test module uses an inductor as a load, and by modulating four switching tubes, the current of the inductor can be made to be a sine wave or other waveforms that meet the working conditions, so that the voltage and current working conditions in the actual system can be simulated, and the temperature rise state during work can also be simulated. At the same time, since an inductor is used as a reactive load, the system input only needs a small power to overcome the loss on the line and the device.

[0065] However, for Figure 3a the photovoltaic boost module and other circuit modules including the first branch 410 and the second branch 420, Figure 3b the current aging test module cannot simultaneously perform voltage and current aging on the transistors (such as silicon carbide MOSFET) and diodes (such as silicon carbide Schottky diodes) inside the module. For example, the aging test module can be used to perform high-voltage and high-current aging on the diodes, but at this time the transistors only pass through a small current. Or, the input power supply and the load (feedback or resistance) have a very high power, and the output voltage of the full-bridge circuit of the aging test module is directly connected to the feedback load or the resistance load, but this scheme increases the complexity and cost of the aging device.

[0066] The test device provided in the embodiments of the utility model can simultaneously perform high-voltage and high-current aging on the transistors and diodes inside the boost module, and simultaneously realize a reactive load, thereby solving the problems of the prior art.

[0067] For example, Figure 2 andFigure 3a As shown, the test circuit 40 can be the part to be tested of the boost module. Of course, the test circuit 40 can also be the part to be tested in other modules, as long as it includes at least one branch composed of a diode and a transistor, and the embodiments of the utility model can simultaneously age and test the performance of the diode and the transistor.

[0068] As shown, the test circuit 40 can be the part to be tested of the boost module. Of course, the test circuit 40 can also be the part to be tested in other modules, as long as it includes at least one branch composed of a diode and a transistor, and the embodiments of the utility model can simultaneously age and test the performance of the diode and the transistor. Figure 2 As shown, the utility model embodiment converts and boosts the voltage and current of the direct current power supply 10 into alternating voltage and alternating current through the high-frequency variable voltage module 20, and the first branch 410 and the second branch 420 can be used as rectifier modules. As shown, Figure 2 As shown, the transistor is used as a synchronous rectifier tube, and the diode is used as a passive rectifier tube.

[0069] The utility model embodiment does not limit the type of the transistor in the first branch 410 and the second branch 420, and the person skilled in the art can determine it according to the actual situation.

[0070] In a possible implementation, as shown in the figure, Figure 2 As shown, the phase-shifted full-bridge unit 210 can include a first full-bridge transistor Q21, a second full-bridge transistor Q22, a third full-bridge transistor Q23, and a fourth full-bridge transistor Q24, wherein,

[0071] The drain of the first full-bridge transistor Q21 is connected with the drain of the second full-bridge transistor Q22 as the positive voltage input end of the phase-shifted full-bridge unit 210,

[0072] The source of the third full-bridge transistor Q23 and the source of the fourth full-bridge transistor Q24 are connected as the negative voltage input end of the phase-shifted full-bridge unit 210,

[0073] The source of the first full-bridge transistor Q21 is connected with the drain of the third full-bridge transistor Q23 as the first load end of the phase-shifted full-bridge unit 210,

[0074] The source of the second full-bridge transistor Q22 is connected with the drain of the fourth full-bridge transistor Q24 as the second load end of the phase-shifted full-bridge unit 210.

[0075] The embodiment of the utility model does not limit the type of each full bridge transistor in the phase shift full bridge unit 210, and the person skilled in the art can set according to the actual situation and need, and the full bridge transistor includes any one of silicon controlled rectifier, switching diode, switching triode, photoelectric coupler, transistor, etc., and the transistor can be metal-oxide semiconductor field effect transistor (MOSFET) and insulated gate bipolar transistor (IGBT), wherein the transistor can be based on silicon carbide SiC and gallium nitride GaN to improve performance.

[0076] Of course, the phase shift full bridge unit 210 can also directly use the existing full bridge module, and the embodiment of the utility model does not limit this.

[0077] In a possible implementation, the high-frequency transformer module 20 can further include a signal generating unit, which is configured to generate a switching control signal for the gate of each full bridge transistor of the phase shift full bridge unit 210, so as to control the high-frequency conversion of the phase shift full bridge unit 210 to the direct current voltage.

[0078] The embodiment of the utility model does not limit the specific implementation of the signal generating unit, and the person skilled in the art can realize it according to the actual situation and need, for example, the signal generating unit can include a processing component and a PWM generator, and the processing component generates the corresponding switching control signal by setting the parameters of the PWM generator.

[0079] In an example, the processing component includes but is not limited to a separate processor, or a discrete component, or a combination of the processor and the discrete component. The processor can include a controller with an execution instruction function in an electronic device, and the processor can be implemented in any appropriate manner, for example, by one or more application specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), controllers, microcontrollers, microprocessors or other electronic elements. Inside the processor, the executable instructions can be executed by hardware circuits such as logic gates, switches, application specific integrated circuits (ASICs), programmable logic controllers and embedded microcontrollers.

[0080] In a possible implementation, the signal generating unit can also be used for:

[0081] The phase shift angle of the phase-shift full-bridge unit 210 is controlled to adjust the test current flowing into the first test terminal and the second test terminal.

[0082] The embodiment of the utility model does not make limitation to the specific implementation mode of controlling the phase shift angle of the phase-shift full-bridge unit 210, and the related technology can be used according to actual conditions and needs by the person skilled in the art, for example, the fixed switching frequency can be set to adjust the switching time to change the phase shift angle; the switching time and the duty cycle can also be adjusted to realize the accurate control of the phase shift angle.

[0083] As shown in the figure, Figure 2 The DC voltage (500V) passes through the phase-shift full-bridge unit and the transformer 220 with a transformation ratio of 1 to 3, and the transformer 220 is connected to the midpoint of the diode and the transistor of the 2KV photovoltaic boost module, at this time, the photovoltaic boost module (the first branch 410 and the second branch 420) acts as a rectifier module in the test device, wherein the transistor is used as a synchronous rectifier tube, and the diode is used as a passive rectifier tube. In this test device, the peak value of the output end of the transformer 220 is 3 times the input voltage, that is, 1500V. This voltage is the working voltage of the boost module in the real system, and different output voltages can be realized by adjusting the input voltage for modules with different voltages. During the rectification process, the transistor and the diode alternately bear the reverse voltage of 1500V and the current fed back to the source end by the transformer 220, and the current size can be realized by adjusting the phase shift angle of the phase-shift full-bridge. At the same time, the high-voltage DC output by the inductor filter is directly fed back to the power supply end, and the input power supply only needs to overcome the loss without the need for high-power output.

[0084] Please refer to Figure 4a 、 Figure 4b 、 Figure 5a 、 Figure 5b , Figure 4a 、 Figure 4b respectively show the voltage waveform diagram and the current waveform diagram of the diode obtained by simulating the operation of the test device, Figure 5a 、 Figure 5b respectively show the voltage waveform diagram and the current waveform diagram of the transistor obtained by simulating the operation of the test device.

[0085] As shown in the figure, Figure 4a 、 Figure 4b During the operation, the diode bears the reverse voltage of 1500V and the peak current of 40A in the positive direction, and the current can be increased by adjusting the phase shift angle. In this working mode, the diode is simultaneously aged in voltage and current.

[0086] As shown in the figure, Figure 5a 、 Figure 5bAs shown, the channel of the transistor also passes a peak current of 40A and withstands a reverse voltage of up to 1500V. Simultaneous voltage and current aging is performed.

[0087] According to an aspect of the present application, a test system is provided, which comprises the test device.

[0088] The various aspects of the embodiments of the present application have the following beneficial effects

[0089] Simultaneously realize the voltage and current aging of the transistor and the diode of the photovoltaic voltage boosting module;

[0090] The device is self-powered and reduces power consumption in production;

[0091] Various voltage and current conditions can be adapted according to the voltage and current level of the module;

[0092] Simultaneously aging two phases, reducing the working hours and increasing the efficiency.

[0093] The above has described the various embodiments of the present application, and the above description is exemplary, not exhaustive, and is not limited to the disclosed embodiments. Many modifications and changes are obvious to those skilled in the art without departing from the scope and spirit of the described embodiments. The selection of the terms used in the embodiments of the present application is intended to best explain the principles, practical applications or improvements of the technology in the market, or to enable other ordinary skilled persons in the art to understand the embodiments disclosed in the embodiments of the present application.

Claims

1. A test device, characterized by The test device comprises a direct current power supply, a high-frequency transformer module, and a feedback module, the high-frequency transformer module comprises a phase-shifted full-bridge unit and at least one transformer, wherein the positive and negative poles of the direct current power supply are connected to the positive and negative voltage input ends of the phase-shifted full-bridge unit respectively, and the positive pole of the direct current power supply is also connected to the first end of the feedback module, the first load end of the phase-shifted full-bridge unit is connected to the first end of the primary winding of each transformer, and the second load end of the phase-shifted full-bridge unit is connected to the second end of the primary winding of each transformer, and the phase-shifted full-bridge unit is used for converting the direct current voltage output by the direct current power supply into alternating current voltage, each transformer is used for aging test of each test circuit, wherein the first end of the secondary winding of each transformer is connected to the first test end of the corresponding test circuit, and the second end of the secondary winding of each transformer is connected to the second test end of the corresponding test circuit, and the first test end and the second test end are used for outputting test signals to test the corresponding test circuit, the positive feedback end of each test circuit is connected to the second end of the feedback module, and the negative feedback end of each test circuit is connected to the negative pole of the direct current power supply.

2. The test device of claim 1, wherein, The feedback module comprises a feedback filter inductor, the first end of the feedback filter inductor is used as the first end of the feedback module, and the second end of the feedback filter inductor is used as the second end of the feedback module.

3. The test device of claim 1, wherein, The test circuit comprises a first branch and a second branch, the first end of the first branch and the first end of the second branch are connected to each other and used as the positive feedback end of the test circuit, and the second end of the first branch and the second end of the second branch are connected to each other and used as the negative feedback end of the test circuit, wherein the first branch and the second branch each comprise a diode and a transistor, and for any one of the first branch and the second branch: one end of the diode and the drain or source of the transistor are connected to each other and used as a test end of the test circuit, the other end of the diode is used as the positive feedback end of the test circuit or the negative feedback end of the test circuit, and the source or drain of the transistor is used as the negative feedback end of the test circuit or the positive feedback end of the test circuit.

4. The test device according to claim 3, wherein the first branch comprises a first branch diode and a first branch transistor, the positive pole of the first branch diode and the drain of the first branch transistor are connected to each other and used as the first test end of the test circuit, the second branch comprises a second branch diode and a second branch transistor, the positive pole of the second branch diode and the drain of the second branch transistor are connected to each other and used as the second test end of the test circuit, the negative pole of the first branch diode and the negative pole of the second branch diode are connected to each other and used as the positive feedback end of the test circuit, the source of the second branch transistor and the source of the first branch transistor are connected to each other and used as the negative feedback end of the test circuit.

5. The test device of claim 1, wherein, the phase-shifted full-bridge unit comprises a first full-bridge transistor, a second full-bridge transistor, a third full-bridge transistor, and a fourth full-bridge transistor, wherein a drain of the first full-bridge transistor is connected with a drain of the second full-bridge transistor as a positive voltage input terminal of the phase-shifted full-bridge unit, a source of the third full-bridge transistor is connected with a source of the fourth full-bridge transistor as a negative voltage input terminal of the phase-shifted full-bridge unit, a source of the first full-bridge transistor is connected with a drain of the third full-bridge transistor as a first load terminal of the phase-shifted full-bridge unit, a source of the second full-bridge transistor is connected with a drain of the fourth full-bridge transistor as a second load terminal of the phase-shifted full-bridge unit.

6. The test device of claim 5, wherein, The high-frequency transformer module further comprises a signal generating unit, which is configured to generate a switching control signal for each full-bridge transistor of the phase-shifted full-bridge unit, so as to control the phase-shifted full-bridge unit to perform high-frequency conversion on the direct-current voltage.

7. The test device of claim 6, wherein, The signal generating unit is further configured to: control a phase-shifted angle of the phase-shifted full-bridge unit, so as to adjust a test current flowing into the first test terminal and the second test terminal.

8. The test device of claim 1, wherein, A product of a ratio of a secondary winding voltage to a primary winding voltage of the transformer and a direct-current voltage output by the direct-current power supply is greater than or equal to a normal working voltage of the test circuit.

9. The test device of claim 8, wherein, The ratio of the secondary winding voltage to the primary winding voltage of the transformer is greater than or equal to 2.

10. A test system, characterized by The test system comprises the test device according to any one of claims 1-9.

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