Power semiconductor module and electronic system
By designing standardized power semiconductor modules, including power chips, heat sinks, and housings, the problems of long development cycles and poor scalability in existing technologies are solved, resulting in more efficient system design and reduced costs.
Patent Information
- Application Number
- CN202520237808.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-14
- Publication Date
- 2025-12-30
- Estimated Expiration
- 2035-02-14
AI Technical Summary
Existing power semiconductor modules have long development cycles, are difficult to scale up, and have poor scalability in frequency converter power supply design, resulting in a large waste of human and material resources and long product iteration cycles.
Design a standardized module comprising a power chip, a heat sink, and a housing. The power chip includes a substrate, a power unit, and a current sharing unit. The substrate is connected to the heat sink, and the housing leads out terminals, thereby achieving standardization and optimized thermal design of the module.
It reduces thermal design complexity, enhances system scalability, shortens system development cycle, and reduces costs.
Smart Images
Figure CN223743657U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of integrated circuit design technology, and in particular to a power semiconductor module and electronic system. Background Technology
[0002] The transformation brought about by new energy sources such as power transmission, photovoltaics, wind power, energy storage, electric vehicles, and industrial drives has led to the widespread application of power semiconductor modules, primarily IGBTs and SiC MOSFETs. Traditional power semiconductor modules are designed with various package shapes for different application areas. When users design frequency converters using power semiconductor modules, they need to select a specific package for their application and complete the entire development process from structural design and thermal design to system integration, resulting in a significant waste of human and material resources. Furthermore, if the product's power requirements change, the entire design process needs to be redeveloped, making it difficult to achieve economies of scale, resulting in poor scalability. Moreover, because new designs require multiple iterations, the product launch cycle is significantly increased.
[0003] It should be noted that the above introduction to the technical background is only for the purpose of providing a clear and complete explanation of the technical solutions of this utility model and facilitating understanding by those skilled in the art. It should not be assumed that these technical solutions are known to those skilled in the art simply because they have been described in the background section of this utility model. Utility Model Content
[0004] In view of the shortcomings of the prior art described above, the purpose of this utility model is to provide a power semiconductor module and electronic system to solve the problems of long development cycle, difficulty in scaling up and poor scalability when using power semiconductor modules with different packages for frequency converter design.
[0005] To achieve the above and other related objectives, this utility model provides a power semiconductor module, the power semiconductor module comprising:
[0006] The power chip, heat sink, and housing are provided. The power chip is disposed on the heat sink, and the housing is disposed on the heat sink and covers the power chip. The housing has DC terminals, AC terminals, and control terminals, which are electrically connected to the DC pins, AC pins, and control pins of the power chip, respectively.
[0007] The power chip includes a substrate, a power unit, and a current sharing unit. The power unit and the current sharing unit are disposed on the heat sink via the substrate, and the current sharing unit is electrically connected between the power unit and the AC pin.
[0008] Optionally, the current sharing unit includes an inductor.
[0009] Optionally, the power unit comprises a first power device and a second power device, the DC pin comprises a first DC pin and a second DC pin, the AC pin comprises a first AC pin, and the control pin comprises a first control pin and a second control pin;
[0010] The control electrode of the first power device is electrically connected to the first control pin, the first electrode is electrically connected to the first DC pin, and the second electrode is electrically connected to the first electrode of the second power device and the first electrode of the third power device through the current sharing unit and the first AC pin;
[0011] The control electrode of the second power device is electrically connected to the second control pin, and the second electrode is electrically connected to the second DC pin.
[0012] Optionally, the power unit comprises a first power device, a second power device, a third power device, a fourth power device, a fifth power device and a sixth power device, the DC pin comprises a first DC pin and a second DC pin, the AC pin comprises a first AC pin and a second AC pin, and the control pin comprises a first control pin, a second control pin, a third control pin, a fourth control pin, a fifth control pin and a sixth control pin;
[0013] The control electrode of the first power device is electrically connected to the first control pin, the first electrode is electrically connected to the first DC pin, and the second electrode is electrically connected to the first electrodes of the second power device and the third power device;
[0014] The control electrode of the second power device is electrically connected to the second control pin, the second electrode is electrically connected to the first electrode of the fourth power device and the first AC pin through the current sharing unit;
[0015] The control electrode of the third power device is electrically connected to the third control pin, and the second electrode is electrically connected to the first electrode of the fifth power device and the second AC pin;
[0016] The control electrode of the fourth power device is electrically connected to the fourth control pin, and the second electrode is electrically connected to the first electrode of the sixth power device;
[0017] The control electrode of the fifth power device is electrically connected to the fifth control pin, and the second electrode is electrically connected to the first electrode of the sixth power device;
[0018] The control electrode of the sixth power device is electrically connected to the sixth control pin, and the second electrode is electrically connected to the second DC pin.
[0019] Optionally, the third power device is replaced by a first diode, and the fifth power device is replaced by a second diode, wherein a cathode of the first diode is electrically connected to the second pole of the first power device, an anode of the first diode is electrically connected to a cathode of the second diode and electrically connected to the second AC pin, and an anode of the second diode is electrically connected to the first pole of the sixth power device.
[0020] Optionally, each power device comprises an IGBT device or a MOSFET device.
[0021] The utility model also provides an electronic system, the electronic system includes at least one power semiconductor module as described above.
[0022] Optionally, when the number of the power semiconductor modules is more than one, the power semiconductor modules are arranged side by side, and the heat sinks in the power semiconductor modules are seamlessly connected to form a heat dissipation channel.
[0023] Optionally, the power semiconductor modules are connected in series and / or in parallel.
[0024] Optionally, the electronic system comprises a variable frequency power supply system.
[0025] As described above, the power semiconductor module and the electronic system of the utility model are a standardized module obtained through the design of a power chip (including a substrate, a power unit and a current sharing unit), a heat sink and an outer shell, and when the standardized module is used for system design, the complexity of thermal design can be reduced, the system scalability can be enhanced, the system development cycle can be shortened, and the cost can be reduced. BRIEF DESCRIPTION OF DRAWINGS
[0026] Figure 1 Fig. 1 shows a top view of a power semiconductor module according to an embodiment of the utility model.
[0027] Figure 2 Fig. 2 shows a side view of the power semiconductor module according to the embodiment of the utility model. Figure 1 Fig. 3 shows a cross-sectional view of the power semiconductor module along the direction of AA' shown in Fig. 1, wherein the corresponding pins and terminals are not shown in the cross-sectional view.
[0028] Figure 3 Fig. 4 shows a schematic diagram of a power unit according to the embodiment of the utility model.
[0029] Figure 4 Fig. 5 shows another schematic diagram of the power unit according to the embodiment of the utility model.
[0030] Figure 5 Fig. 6 shows still another schematic diagram of the power unit according to the embodiment of the utility model.
[0031] Figure 6Another schematic view of the power unit in the embodiment one of the present application is shown.
[0032] Figure 7 A schematic view of the electronic system in the embodiment two of the present application is shown.
[0033] Figure 8 A schematic view of the electronic system in the embodiment two of the present application including three parallel power semiconductor modules is shown.
[0034] Figure 9 A schematic view of the electronic system in the embodiment two of the present application including four parallel power semiconductor modules is shown.
[0035] Element number explanation
[0036] 100 power semiconductor module
[0037] 110 power chip
[0038] 111 substrate
[0039] 112 power unit
[0040] 113 current sharing unit
[0041] 120 heat sink
[0042] 130 housing
[0043] 200 carrier board DETAILED DESCRIPTION
[0044] The embodiments of the present application will be described herein below with reference to specific examples. Other advantages and effects of the present application can be easily understood by those skilled in the art from the contents disclosed in this specification. The present application can also be implemented or applied in other different embodiments, and the details in this specification can be modified or changed based on different views and applications without departing from the spirit of the present application.
[0045] Please refer to Figures 1 to 9 . It should be noted that the diagrams provided in the present embodiment only schematically illustrate the basic concept of the present application, and thus the diagrams only show the components related to the present application instead of showing the number, shape and size of the components in actual implementation. The shape, number and proportion of the components in actual implementation can be randomly changed, and the layout of the components can be more complex.
[0046] Embodiment one
[0047] As shown in Figures 1 to 3 , the present embodiment provides a power semiconductor module 100 including a power chip 110, a heat sink 120 and a housing 130.
[0048] The power chip 110 is arranged on the heat sink 120, and includes a substrate 111, a power unit 112, and a current sharing unit 113. In an embodiment, the power chip 110 further includes a direct current pin DC1, an alternating current pin AC1, and a control pin CTL1. As an optional solution, the power chip 110 is a bare chip, and the corresponding pins are pads exposed on the surface of the bare chip.
[0049] The substrate 111 serves as a carrier of the power unit 112 and the current sharing unit 113, and is used to provide support for the power unit 112 and the current sharing unit 113, and to transfer heat generated by the power unit 112 and the current sharing unit 113 to the heat sink 120. In actual applications, the substrate 111 is usually made of a material with excellent heat conduction performance, such as a ceramic material.
[0050] The power unit 112 is arranged on the heat sink 120 through the substrate 111, and includes a plurality of power devices. By controlling the opening or closing of each power device, a switching function is realized.
[0051] In a possible example, the power unit 112 includes a first power device Q1 and a second power device Q2. At this time, the direct current pin DC1 of the power chip 110 includes a first direct current pin DC11 and a second direct current pin DC12, the alternating current pin AC1 of the power chip 110 includes a first alternating current pin AC11, and the control pin CTL1 of the power chip 110 includes a first control pin CTL11 and a second control pin CTL12.
[0052] The control electrode of the first power device Q1 is electrically connected to the first control pin CTL11, the first electrode is electrically connected to the first direct current pin DC11, and the second electrode is electrically connected to the first electrode of the second power device Q2 and the first alternating current pin AC11 through the current sharing unit 113. The control electrode of the second power device Q2 is electrically connected to the second control pin CTL12, and the second electrode is electrically connected to the second direct current pin DC12.
[0053] As an optional solution, the first power device Q1 includes an IGBT device or a MOSFET device, and the second power device Q2 includes an IGBT device or a MOSFET device. Further, the MOSFET device includes a SiC MOSFET device. When the corresponding power device includes an IGBT device, the control electrode refers to the gate electrode, the first electrode refers to the collector electrode, and the second electrode refers to the emitter electrode. When the corresponding power device includes a MOSFET device, the control electrode refers to the gate electrode, the first electrode refers to the drain electrode, and the second electrode refers to the source electrode.
[0054] In practical applications, the device types of the first power device Q1 and the second power device Q2 are usually the same, i.e., each of the power devices is an IGBT device or each of the power devices is an MOSFET device, Figure 3 A schematic diagram in which each of the power devices is an IGBT device is shown; of course, it is also possible that the device types of the power devices are different.
[0055] In another possible example, as shown in Figure 4 and Figure 5 The power unit 112 includes a first power device Q1, a second power device Q2, a third power device Q3, a fourth power device Q4, a fifth power device Q5, and a sixth power device Q6, at this time, the DC pin DC1 of the power chip 110 includes a first DC pin DC11 and a second DC pin DC12, the AC pin AC1 of the power chip 110 includes a first AC pin AC11 and a second AC pin AC12, and the control pin CTL1 of the power chip 110 includes a first control pin CTL11, a second control pin CTL12, a third control pin CTL13, a fourth control pin CTL14, a fifth control pin CTL15, and a sixth control pin CTL16.
[0056] The control electrode of the first power device Q1 is electrically connected to the first control pin CTL11, the first electrode is electrically connected to the first DC pin DC11, and the second electrode is electrically connected to the first electrodes of the second power device Q2 and the third power device Q3; the control electrode of the second power device Q2 is electrically connected to the second control pin CTL12, the second electrode is electrically connected to the first electrode of the fourth power device Q4 and is electrically connected to the first AC pin AC11 through the current sharing unit 113; the control electrode of the third power device Q3 is electrically connected to the third control pin CTL13, and the second electrode is electrically connected to the first electrode of the fifth power device Q5 and is electrically connected to the second AC pin AC12; the control electrode of the fourth power device Q4 is electrically connected to the fourth control pin CTL14, and the second electrode is electrically connected to the first electrode of the sixth power device Q6; the control electrode of the fifth power device Q5 is electrically connected to the fifth control pin CTL15, and the second electrode is electrically connected to the first electrode of the sixth power device Q6; the control electrode of the sixth power device Q6 is electrically connected to the sixth control pin CTL16, and the second electrode is electrically connected to the second DC pin DC12.
[0057] As an option, the first power device Q1 comprises an IGBT device or a MOSFET device, the second power device Q2 comprises an IGBT device or a MOSFET device, the third power device Q3 comprises an IGBT device or a MOSFET device, the fourth power device Q4 comprises an IGBT device or a MOSFET device, the fifth power device Q5 comprises an IGBT device or a MOSFET device, and the sixth power device Q6 comprises an IGBT device or a MOSFET device; further, the MOSFET device comprises a SiC MOSFET device. When the corresponding power device comprises an IGBT device, the control electrode refers to the gate electrode, the first electrode refers to the collector electrode, and the second electrode refers to the emitter electrode; when the corresponding power device comprises a MOSFET device, the control electrode refers to the gate electrode, the first electrode refers to the drain electrode, and the second electrode refers to the source electrode.
[0058] In an implementation, the device types of the power devices Q1-Q6 are the same, i.e., the power devices Q1-Q6 are all IGBT devices or all MOSFET devices, Figure 4 A schematic diagram is shown in which the power devices Q1-Q6 are all IGBT devices. In another implementation, the device types of the power devices Q1-Q6 are partially the same, i.e., the device types of the first power device Q1, the third power device Q3, the fifth power device Q5, and the sixth power device Q6 are the same, the device types of the second power device Q2 and the fourth power device Q4 are the same, and the device types of the above two types are different, Figure 5 A schematic diagram is shown in which the first power device Q1, the third power device Q3, the fifth power device Q5, and the sixth power device Q6 are IGBT devices, and the second power device Q2 and the fourth power device Q4 are MOSFET devices; of course, other device type settings are also possible.
[0059] In other possible examples, the above-mentioned another possible example can be replaced with a new power unit 112, e.g., replacing the third power device Q3 with the first diode D1, replacing the fifth power device Q5 with the second diode D2, as shown in Figure 6
[0060] In this example, the power unit 112 comprises the first power device Q1, the second power device Q2, the fourth power device Q4, the sixth power device Q6, the first diode D1, and the second diode D2, at this time, the DC pin DC1 of the power chip 110 comprises the first DC pin DC11 and the second DC pin DC12, the AC pin AC1 of the power chip 110 comprises the first AC pin AC11 and the second AC pin AC12, and the control pin CTL1 of the power chip 110 comprises the first control pin CTL11, the second control pin CTL12, the fourth control pin CTL14, and the sixth control pin CTL16.
[0061] The control electrode of the first power device Q1 is electrically connected to the first control pin CTL11, the first electrode is electrically connected to the first direct current pin DC11, and the second electrode is electrically connected to the first electrode of the second power device Q2 and the cathode of the first diode D1; the control electrode of the second power device Q2 is electrically connected to the second control pin CTL12, the second electrode is electrically connected to the first electrode of the fourth power device Q4 and the first alternating current pin AC11 through the current sharing unit 113; the anode of the first diode D1 is electrically connected to the cathode of the second diode D2 and the second alternating current pin AC12; the control electrode of the fourth power device Q4 is electrically connected to the fourth control pin CTL14, and the second electrode is electrically connected to the first electrode of the sixth power device Q6; the anode of the second diode D2 is electrically connected to the first electrode of the sixth power device Q6; the control electrode of the sixth power device Q6 is electrically connected to the sixth control pin CTL16, and the second electrode is electrically connected to the second direct current pin DC12.
[0062] As an optional solution, the first power device Q1 includes an IGBT device or a MOSFET device, the second power device Q2 includes an IGBT device or a MOSFET device, the fourth power device Q4 includes an IGBT device or a MOSFET device, and the sixth power device Q6 includes an IGBT device or a MOSFET device; further, the MOSFET device includes a SiC MOSFET device. When the corresponding power device includes an IGBT device, the control electrode refers to the gate, the first electrode refers to the collector, and the second electrode refers to the emitter; when the corresponding power device includes a MOSFET device, the control electrode refers to the gate, the first electrode refers to the drain, and the second electrode refers to the source.
[0063] In practical applications, the device types of the first power device Q1, the second power device Q2, the fourth power device Q4, and the sixth power device Q6 are usually the same, that is, all the power devices described above are IGBT devices or MOSFET devices, Figure 6 A schematic diagram is shown when all the power devices described above are IGBT devices; of course, it is also feasible that the device types of the power devices described above are different.
[0064] It should be noted that the structures described in the above examples are only exemplary descriptions of the power unit 112, and the power unit 112 of the present embodiment should not be limited to the structures described in the above examples, and other power structures based on power devices are also feasible.
[0065] The current-sharing unit 113 is arranged on the heat sink 120 through the substrate 111, and is electrically connected between the power unit 112 and the alternating current pin AC1 of the power chip 110; in an embodiment, the current-sharing unit 113 is electrically connected between the power unit 112 and the first alternating current pin AC11 of the power chip 110. In a possible example, the current-sharing unit 113 includes an inductor L.
[0066] By adding the current-sharing unit 113 in the power chip 110, the problem of increased inter-module circulating current when multiple modules are connected in parallel can be solved, which is conducive to better realizing the current-sharing characteristics of multiple modules, and each module can release more margin. In addition, the current-sharing unit 113 is integrated inside the power chip 110, which not only facilitates installation, but also solves the heat dissipation problem by using the heat sink 120.
[0067] The heat sink 120 is used to dissipate heat of the power unit 112 and the current-sharing unit 113 in the power chip 110. By integrating the heat sink 120, the thermal resistance and thermal capacity of the module are standardized, which avoids complex thermal design when used by the user, and is conducive to improving the consistency of thermal design. Moreover, by arranging the power chip 110 directly on the heat sink 120, the connection thermal resistance can be greatly reduced, which is conducive to improving the current capacity of the module.
[0068] The shell 130 is arranged on the heat sink 120 and covers the power chip 110 to protect it. In an embodiment, the shell 130 has a direct current terminal DC2, an alternating current terminal AC2 and a control terminal CTL2 led out therefrom, wherein the direct current terminal DC2 is electrically connected to the direct current pin DC1 of the power chip 110, the alternating current terminal AC2 is electrically connected to the alternating current pin AC1 of the power chip 110, and the control terminal CTL2 is electrically connected to the control pin CTL1 of the power chip 110.
[0069] In actual application, the number of the direct current terminal DC2, the alternating current terminal AC2 and the control terminal CTL2 led out from the shell 130 depends on the number of the direct current pin DC1, the alternating current pin AC1 and the control pin CTL1 in the power chip 110.
[0070] For example, when the power chip 110 includes two direct current pins (i.e., a first direct current pin DC11 and a second direct current pin DC12), one alternating current pin (i.e., a first alternating current pin AC11) and two control pins (i.e., a first control pin CTL11 and a second control pin CTL12), correspondingly, two direct current terminals (i.e., a first direct current terminal DC21 and a second direct current terminal DC22), one alternating current terminal (i.e., a first alternating current terminal AC21) and two control terminals (i.e., a first control terminal CTL21 and a second control terminal CTL22) are led out from the shell 130.
[0071] The first DC terminal DC21 is electrically connected with the first DC pin DC11, the second DC terminal DC22 is electrically connected with the second DC pin DC12, the first AC terminal AC21 is electrically connected with the first AC pin AC11, the first control terminal CTL21 is electrically connected with the first control pin CTL11, and the second control terminal CTL22 is electrically connected with the second control pin CTL12. It should be noted that the electrical connection between the corresponding terminal and the corresponding pin can be realized by a wire bonding process, of course, other ways capable of realizing electrical connection are also feasible.
[0072] Embodiment Two
[0073] As shown in Figure 7 , the embodiment provides an electronic system, which comprises a power semiconductor module 100, and further comprises a carrier plate 200, the power semiconductor module 100 is arranged on the carrier plate 200; wherein the power semiconductor module 100 is realized by using the structure as recorded in Embodiment One. In an implementation manner, the electronic system comprises a variable frequency power supply system.
[0074] In the electronic system of the embodiment, the number of the power semiconductor modules 100 is greater than or equal to one; when the number of the power semiconductor modules 100 is greater than one, the power semiconductor modules 100 are arranged side by side, and the heat sinks 120 in the power semiconductor modules 100 are seamlessly connected to form a heat dissipation channel, which is beneficial to improving the module heat dissipation performance.
[0075] The power semiconductor modules 100 can be electrically connected according to specific application requirements, for example, the power semiconductor modules 100 are connected in series, or the power semiconductor modules 100 are connected in parallel, of course, the power semiconductor modules 100 can also be connected in a mixed manner; in actual application, the power semiconductor modules 100 are usually connected in parallel, for example, as shown in Figure 8 and Figure 9 It should be noted that the mixed connection here refers to the case of simultaneously including series connection and parallel connection.
[0076] In the embodiment, the power semiconductor module 100 is formed by arranging the power chip 110 composed of the substrate 111, the power unit 112 and the current sharing unit 113 on the heat sink 120 and covering the same by the shell 130, the standardized module has excellent thermal design performance and current sharing characteristics, so that when the electronic system is designed based on the standardized module, system expansion is facilitated, system development cycle is shortened, and system performance is improved.
[0077] In summary, the utility model discloses a kind of power semiconductor module and electronic system, by the design of power chip (including substrate, power unit and current sharing unit), radiator and shell obtains a standard module, when using the standard module to carry out system design, can reduce the complexity of thermal design, enhance system scalability, shorten system development cycle, it is favorable to reduce cost.So, the utility model effectively overcomes the shortcomings in the prior art and has high industrial utilization value.
[0078] The above embodiments only exemplarily illustrate the principles and effects of the utility model, and are not used to limit the utility model. Any person skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the utility model. Therefore, all equivalent modifications or changes completed by those skilled in the art without departing from the spirit and technical thought disclosed by the utility model should be covered by the claims of the utility model.
Claims
1. A power semiconductor module, characterized by, The power semiconductor module comprises: a power chip, a heat sink and a shell, the power chip is arranged on the heat sink, the shell is arranged on the heat sink and covers the power chip, the shell leads out a direct current terminal, an alternating current terminal and a control terminal, which are respectively electrically connected to a direct current pin, an alternating current pin and a control pin of the power chip; The power chip comprises a substrate, a power unit and a current sharing unit, the power unit and the current sharing unit are arranged on the heat sink through the substrate, and the current sharing unit is electrically connected between the power unit and the alternating current pin.
2. The power semiconductor module according to claim 1, characterized in that The current sharing unit comprises an inductor.
3. The power semiconductor module according to claim 1, characterized in that The power unit comprises a first power device and a second power device, the direct current pin comprises a first direct current pin and a second direct current pin, the alternating current pin comprises a first alternating current pin, and the control pin comprises a first control pin and a second control pin; The control electrode of the first power device is electrically connected to the first control pin, the first electrode is electrically connected to the first direct current pin, and the second electrode is electrically connected to the first electrode of the second power device and the first electrode of the current sharing unit. The control electrode of the second power device is electrically connected to the second control pin, and the second electrode is electrically connected to the first electrode of the fourth power device and the first electrode of the current sharing unit.
4. The power semiconductor module according to claim 1, characterized in that The power unit comprises a first power device, a second power device, a third power device, a fourth power device, a fifth power device and a sixth power device, the direct current pin comprises a first direct current pin and a second direct current pin, the alternating current pin comprises a first alternating current pin and a second alternating current pin, and the control pin comprises a first control pin, a second control pin, a third control pin, a fourth control pin, a fifth control pin and a sixth control pin; The control electrode of the first power device is electrically connected to the first control pin, the first electrode is electrically connected to the first direct current pin, and the second electrode is electrically connected to the first electrodes of the second power device and the third power device; The control electrode of the second power device is electrically connected to the second control pin, the second electrode is electrically connected to the first electrode of the fourth power device and the first electrode of the current sharing unit; The control electrode of the third power device is electrically connected to the third control pin, and the second electrode is electrically connected to the first electrode of the fifth power device and the second alternating current pin; The control electrode of the fourth power device is electrically connected to the fourth control pin, and the second electrode is electrically connected to the first electrode of the sixth power device; The control electrode of the fifth power device is electrically connected to the fifth control pin, and the second electrode is electrically connected to the first electrode of the sixth power device; The control electrode of the sixth power device is electrically connected to the sixth control pin, and the second electrode is electrically connected to the second direct current pin.
5. The power semiconductor module according to claim 4, characterized in that The third power device is replaced by a first diode, and the fifth power device is replaced by a second diode, wherein the cathode of the first diode is electrically connected to the second electrode of the first power device, the anode is electrically connected to the cathode of the second diode and the second alternating current pin, and the anode of the second diode is electrically connected to the first electrode of the sixth power device.
6. The power semiconductor module according to any one of claims 3 to 5, characterized in that Each power device comprises an IGBT device or a MOSFET device.
7. An electronic system, characterized by The electronic system comprises at least one power semiconductor module according to any one of claims 1 to 6.
8. The electronic system of claim 7, wherein, In case the number of power semiconductor modules is greater than one, the power semiconductor modules are arranged side by side, and the heat sinks of the power semiconductor modules are seamlessly connected to form a heat dissipation channel.
9. The electronic system of claim 8, wherein, Each power semiconductor module is connected in series and / or in parallel.
10. The electronic system according to any of claims 7-9, characterized in that, The electronic system comprises a variable frequency power supply system.