Metal chemical vapor deposition equipment and reaction chamber thereof

Abstract

The utility model provides metal chemical vapor deposition equipment and a reaction chamber thereof, and the reaction chamber comprises: a cavity in which an accommodating cavity is formed; the cavity cover is arranged on the cavity body in a covering manner, and the cavity cover and the cavity body are enclosed to form the accommodating cavity; the wafer bearing device comprises a mother disc and a plurality of wafer carrying discs, the mother disc is rotatably arranged in the accommodating cavity, the plurality of wafer carrying discs are rotatably distributed on the mother disc in a circumferential manner, and the wafer carrying discs are used for bearing wafers; and the reflection piece is arranged at the bottom of the cavity cover and is arranged opposite to the wafer bearing device, the reflection piece comprises a plate body and a reflection film, and the reflection film is arranged on the surface of one side, facing the mother disc, of the plate body. According to the reaction chamber of the metal chemical vapor deposition equipment, the reflecting film is arranged on the plate body, and the reflecting film can reflect heat emitted by the wafer bearing device to the mother disc, so that the growth quality of a thin film can be ensured, and the energy utilization efficiency can be improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to metal chemical vapor deposition equipment manufacturing technical field especially is a kind of metal chemical vapor deposition equipment and its reaction chamber. BACKGROUND

[0002] In the field of semiconductor epitaxy process, metal chemical vapor deposition, namely Metal-Organic Chemical Vapor Deposition (MOCVD) technology, is well known for its excellent thin film growth capability. This technology uses organic metal compounds and gas reaction sources to form thin films on substrates, and is widely used in the manufacture of high-performance semiconductor devices, such as LEDs, lasers, solar cells, new energy vehicles, rail transit, etc. The development of MOCVD technology not only promotes the significant improvement of optoelectronic device performance, but also provides key support for the miniaturization and functionalization of integrated circuits.

[0003] The temperature at the top of the MOCVD reaction chamber has reached the thin film growth temperature, not only wasting energy, but also the process gas will react and deposit on its surface, generating a large amount of reaction products during the thin film growth process, affecting the quality of thin film growth. How to reduce the temperature at the top of the reaction chamber needs to be solved urgently. SUMMARY

[0004] The utility model aims at at least one of the technical problems existing in prior art. To this end, the utility model provides a reaction chamber of a metal chemical vapor deposition equipment, which can ensure the quality of thin film growth.

[0005] The utility model further provides a metal chemical vapor deposition equipment, which comprises the above reaction chamber.

[0006] According to the reaction chamber of the metal chemical vapor deposition equipment of the first aspect of the utility model, the cavity is formed in the cavity, and the cavity cover is arranged on the cavity and surrounds the cavity to form the containing cavity. The wafer carrying device comprises a master disc and a plurality of slide discs. The master disc is rotatably arranged in the containing cavity, and the plurality of slide discs are circumferentially distributed on the master disc. The slide discs are used for carrying wafers. The reflector is arranged at the bottom of the cavity cover and opposite to the wafer carrying device. The reflector comprises a plate body and a reflective film. The reflective film is arranged on the side surface of the plate body facing the master disc.

[0007] According to the metal chemical vapor deposition equipment of the utility model, the reflective film is arranged on the plate body. The reflective film can reflect the heat emitted by the wafer carrying device to the master disc, so as to ensure the quality of thin film growth. At the same time, the energy utilization efficiency can also be improved.

[0008] According to some embodiments of the present application, the reflective film is at least one of a tantalum oxide film, a silicon dioxide film, a titanium dioxide film, and a zirconium oxide film.

[0009] According to some embodiments of the present application, the reflective film has a thickness of 10-50 microns.

[0010] According to some embodiments of the present application, the reflective film is configured to have a reflectivity of greater than 99% for infrared thermal radiation light having a wavelength of 1000-8000 nm.

[0011] According to some embodiments of the present application, the plate body is a quartz piece or a graphite material piece.

[0012] According to some embodiments of the present application, the reflective member is provided with a flow guide surface along the outer periphery of the side surface of the mother disc facing the mother disc, and the flow guide surface extends obliquely towards the mother disc in a direction from the rotational axis of the mother disc to the periphery of the mother disc.

[0013] According to some optional embodiments of the present application, the periphery of the reflective member is bent in a circular arc towards the side of the mother disc to form the flow guide surface.

[0014] According to some embodiments of the present application, the metal chemical vapor deposition device comprises a shower head fixed to the reflective member on the side of the reflective member facing the mother disc, and the shower head is provided with gas injection holes; the cavity is provided with an exhaust hole on the side of the mother disc facing away from the reflective member.

[0015] According to some embodiments of the present application, the metal chemical vapor deposition device comprises a heating member provided on the side of the wafer carrying device facing away from the reflective member, and the heating member is used to heat the mother disc.

[0016] The metal chemical vapor deposition device according to the second aspect of the present application comprises the reaction chamber according to the first aspect of the present application.

[0017] According to the metal chemical vapor deposition device of the present application, by providing the reaction chamber according to the first aspect of the present application, the reflective film is provided on the plate body, and the reflective film can reflect the heat emitted by the wafer carrying device to the mother disc, thereby ensuring the quality of thin film growth, and improving the energy utilization efficiency.

[0018] Additional aspects and advantages of the present application will be given in part in the following description, and will become apparent from the following description, or will be learned by practice of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 is a schematic view of a metal chemical vapor deposition apparatus according to an embodiment of the present application.

[0020] Reference signs:

[0021] 100, reaction chamber;

[0022] 10, cavity; 11, exhaust hole; 12, cooling flow channel;

[0023] 20, master disc; 21, slide disc; 22, rotating device;

[0024] 30, reflecting member; 31, plate body; 32, reflecting film; 33, flow guide surface;

[0025] 40, shower head;

[0026] 50, heating member;

[0027] 60, graphite barrel;

[0028] 70, heat insulation felt;

[0029] 80, cavity cover;

[0030] 200, wafer. DETAILED DESCRIPTION

[0031] Embodiments of the present application will be described in detail below, examples of which are shown in the drawings, wherein the same or similar reference signs represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary and are intended to explain the present application, and cannot be understood as limiting the present application.

[0032] Some embodiments of the present application provide a metal chemical vapor deposition apparatus, which includes a reaction chamber 100.

[0033] The reaction chamber 100 of the metal chemical vapor deposition apparatus according to an embodiment of the present application will be described below with reference to the accompanying drawings. Figure 1 The reaction chamber 100 of the metal chemical vapor deposition apparatus according to an embodiment of the present application will be described below with reference to the accompanying drawings. Figure 1 The reaction chamber 100 of the metal chemical vapor deposition apparatus according to an embodiment of the present application includes a cavity 10, a wafer supporting device, and a reflecting member 30.

[0034] Specifically, the cavity 10 is generally cylindrical, with a receiving cavity formed inside. The wafer carrier includes a master disk 20 and wafer carrier disks 21. The master disk 20 is generally a circular plate extending along a horizontal plane and is rotatably disposed within the receiving cavity. Multiple wafer carrier disks 21 are rotatably disposed on the master disk 20 and are used to carry the wafer 200. In some embodiments, there are three or more wafer carrier disks 21, all of which are circumferentially distributed on the master disk 20. The master disk 20 and wafer carrier disks 21 may be made of conductive materials such as graphite. The reaction chamber 100 of the metal chemical vapor deposition apparatus includes a fluid delivery system (not shown) that can control the selective delivery of fluid to a gas tank (not shown) in the master disk 20. In some embodiments, the fluid delivery system includes one or more fluid sources, such as inert gases such as nitrogen, hydrogen, and argon, and also includes a fluid control device for controlling the delivery of the fluid sources. The fluid control device controls the flow rate, velocity, and / or pressure of the fluid delivered to the gas tanks according to instructions from the system controller (not shown). In some embodiments, the fluid control device is a conventional mass flow controller (MFC) connected to the system controller. The levitation height of the wafer tray 21 can be changed by controlling the characteristics of the fluid delivered from the three or more gas tanks to the surface of the wafer tray 21, such as the air flow rate of the fluid from the three or more gas tanks. The levitation, support, positioning, and / or rotation of the wafer tray 21 are caused by the frictional force and atomic kinetic energy transfer of the fluid flowing over the surface of the wafer tray 21. Under the action of the airflow, the wafer tray 21 carries the wafer 200 to float and rotate around its own central axis.

[0035] The reaction chamber 100 of the metal chemical vapor deposition equipment also includes a chamber cover 80, which is generally a plate-shaped body extending in the horizontal direction. The chamber cover 80 covers the chamber body 10 and surrounds the chamber body 10 to form the receiving cavity. The reflector 30 is disposed at the bottom of the chamber cover 80 and is disposed opposite to the wafer carrier.

[0036] The reflector 30 is disposed at the bottom of the cavity cover 80 and is positioned opposite to the wafer carrier. The reflector 30 includes a plate 31 and a reflective film 32. The reflective film 32 is disposed on the surface of the plate 31 facing the mother disk 20 (e.g., Figure 1 (The lower surface of the plate 31 shown).

[0037] For example, such as Figure 1 As shown, a receiving cavity is formed inside the cavity 10, the wafer 200 is placed on the wafer carrier 21, the wafer carrier 21 is arranged circumferentially on the mother disk 20, the mother disk 20 is located in the receiving cavity, the mother disk 20 can rotate in the receiving cavity, the plate 31 of the reflector 30 is located on the upper side of the mother disk 20, and a reflective film 32 is provided on the side surface of the plate 31 facing the mother disk 20.

[0038] The reaction chamber 100 of the metal chemical vapor deposition equipment, the reflecting film 32 is arranged on the plate body 31, the reflecting film 32 can reflect the heat radiated by the wafer carrying device to the master disc 20, so that the temperature at the reflecting member 30 can be reduced, on the one hand, the energy reflected back can ensure the energy supply on the master disc 20, reduce the temperature reduction, on the other hand, the temperature at the reflecting member 30 is maintained at a relatively low temperature, the generation of reaction particulate matters at the reflecting member 30 can be reduced, and then the particulate matters falling on the wafer 200 can be reduced, and then the film growth quality can be ensured, and simultaneously, the temperature difference of the master disc 20 is reduced, the temperature difference in the vertical direction of the master disc 20 is reduced, and the wafer 200 can also avoid the warping phenomenon, so that the film growth quality can be further ensured. The reflecting film 32 can reflect the heat radiated by the master disc 20, so that the heat loss in the containing cavity can be reduced, and then the heating efficiency and the heat preservation effect can be improved, and the energy utilization efficiency can be effectively improved. It should be noted that the film growth quality mentioned in the utility model generally refers to the number of particulate matters per unit area of the film on the wafer, and / or the warping degree, wherein the unit of the number of particulate matters per unit area is cm 2 , and the unit of the warping degree is pm.

[0039] According to the reaction chamber 100 of the metal chemical vapor deposition equipment of the embodiment of the utility model, the reflecting film 32 is arranged on the plate body 31, the reflecting film 32 can reflect the heat radiated by the wafer carrying device to the master disc 20, so that the film growth quality can be ensured, and simultaneously, the energy utilization efficiency can also be improved.

[0040] According to some embodiments of the utility model, referring to Figure 1 , the reflecting film 32 is at least one of a tantalum oxide film, a silicon dioxide film, a titanium dioxide film and a zirconium oxide film. Thus, the reflectivity of the reflecting film 32 can be ensured, so that the heat radiated by the master disc 20 can be reflected to the master disc 20 to the greatest extent, and then the temperature difference of the master disc 20 can be effectively reduced. Alternatively, the reflecting film 32 is alternatively plated on the surface of the plate body 31 by vacuum evaporation, magnetron sputtering and atomic layer deposition, so that the reliability of the connection between the reflecting film 32 and the plate body 31 can be ensured.

[0041] According to some embodiments of the utility model, referring to Figure 1 , the thickness of the reflecting film 32 is 10um-50um. Thus, the strength of the reflecting film 32 can be ensured, the damage of the reflecting film 32 can be effectively prevented, and simultaneously, the reflectivity of the reflecting film 32 can also be ensured.

[0042] For example, as shown in Figure 1 , the thickness of the reflecting film 32 can be 10um, 15um, 20um, 25um, 30um, 35um, 40um, 45um or 50um.

[0043] According to some embodiments of the present application, referring to Figure 1 The reflective film 32 is configured to have a reflectivity greater than 99% for infrared thermal radiation light with a wavelength of 1000nm-8000nm. The temperature corresponding to the wavelength of 1000nm-8000nm is 100℃-2400℃, and the temperature range is conducive to the growth of the wafer 200. Thus, the reflective film 32 can reflect a large range of temperatures, thereby reflecting heat to the master disc 20 during the entire growth process of the wafer 200.

[0044] According to some embodiments of the present application, referring to Figure 1 The plate body 31 is made of quartz, graphite or other high-temperature resistant materials. In one embodiment, the plate body 31 is a quartz piece, which is an insulator and does not conduct magnetic field. Thus, the heating power can be reduced, and the energy utilization rate can be effectively improved.

[0045] According to some embodiments of the present application, referring to Figure 1 The outer periphery of the side surface of the reflector 30 facing the master disc 20 (for example, the lower side surface of the reflector 30 as shown in Figure 1 ) is provided with a flow guide surface 33. In the direction from the rotation axis of the master disc 20 to the circumferential direction of the master disc 20, the flow guide surface 33 extends obliquely towards the master disc 20. Thus, the flow guide surface 33 can guide the airflow at this position, thereby avoiding turbulence at the position of the flow guide surface 33, effectively ensuring the stability of the airflow in the containing cavity, and further effectively ensuring the growth quality of the thin film.

[0046] According to some optional embodiments of the present application, referring to Figure 1 The circumferential direction of the reflector 30 is arc-bent towards the side of the master disc 20 to form the flow guide surface 33. Thus, the flow guide surface 33 is formed by changing the structure of the reflector 30, without the need for additional processing of the flow guide surface 33. Thus, the complexity of the parts of the reaction chamber 100 of the metal chemical vapor deposition equipment can be reduced, and the use cost can be effectively reduced.

[0047] For example, as shown in Figure 1 The circumferential direction of the reflector 30 is arc-bent towards the lower side, and the lower side surface of the outer periphery of the reflector 30 is formed as the flow guide surface 33.

[0048] According to some embodiments of the present application, as shown in Figure 1 The reaction chamber 100 of the metal chemical vapor deposition equipment comprises a shower head 40 fixed to the cavity cover 80 and penetrating through the reflector 30. The shower head 40 is located at the side of the reflector 30 facing the master disc 20 (for example, the lower side surface of the reflector 30 as shown in Figure 1The gas inlet is arranged on the shower head 40, and the gas outlet 11 is arranged on the cavity 10, so that the circulation of the gas in the accommodating cavity is realized, and the normal growth of the thin film on the wafer 200 can be ensured. Figure 1 The gas outlet 11 is arranged on the lower side of the mother disc 20.

[0049] In this way, the gas inlet is arranged on the shower head 40, and the gas outlet 11 is arranged on the cavity 10, so that the circulation of the gas in the accommodating cavity is realized, and the normal growth of the thin film on the wafer 200 can be ensured. In addition, the gas inlet and the gas outlet are reasonably arranged, so that the gas flow can smoothly flow to the gas outlet. In addition, the flow guide surface 33 can guide the gas flow entering from the gas inlet, so that the gas can quickly flow to the gas outlet, and the turbulence of the gas in the accommodating cavity can be further avoided to affect the growth of the thin film.

[0050] For example, as shown in FIG. 1, the shower head 40 is fixed on the cavity cover 80 and penetrates through the lower side surface of the reflector 30, the gas inlet is arranged on the shower head 40, and the gas outlet 11 is arranged on the lower side of the cavity 10. Figure 1 The position of the gas outlet 11 is opposite to the flow guide surface 33 in the up-down direction, so that the flow guide surface 33 can guide the gas to the gas outlet 11.

[0051] According to some embodiments of the present application, as shown in FIG. 1, the reaction chamber 100 of the metal chemical vapor deposition device comprises a heating member 50. Figure 1 The heating member 50 is arranged on the side of the wafer carrying device away from the reflector 30 (for example, as shown in the lower side of the wafer carrying device in FIG. 1), and the heating member 50 is used for heating the mother disc 20 and the wafer disc 21. Figure 1 Therefore, the wafer 200 can be heated by the mother disc 20 and the wafer disc 21 of the wafer carrying device, so that the normal growth of the thin film on the wafer 200 can be ensured. The rotating device 22 is arranged on the central axis of the mother disc 20, and the rotating device 22 can drive the mother disc 20 to rotate around the central axis of the mother disc 20.

[0052] According to some embodiments of the present application, as shown in FIG. 1, the heating member 50 is an induction coil. Figure 1 Therefore, compared with the traditional heating method such as resistance heating, the induction heating can directly transmit the energy to the workpiece more quickly, reduces the heat loss, improves the energy efficiency, and can very accurately control the temperature distribution and the final temperature in the heating process, so that the growth quality of the thin film can be effectively ensured.

[0053] Further, as shown in FIG. 1, the metal chemical vapor deposition device further comprises a temperature sensor 60. Figure 1As shown, the cavity 10 and the cavity cover 80 are formed with cooling flow channels 12. Thus, the cooling flow channels 12 can cool the cavity 10, avoid overheating of the cavity 10 and the cavity cover 80 from damage, and meanwhile, the cooling flow channels 12 can cool the plate body 31 of the reflector 30, so that some particle impurities generated in the reaction cannot grow on the reflecting film 32, thereby reducing the impurity content in the reaction cavity, and effectively ensuring the cleanliness in the containing cavity and improving the film growth quality. In addition, the cleaning frequency of the plate body 31 can be reduced, thereby effectively prolonging the service life of the plate body 31.

[0054] Further, as shown, Figure 1 Figure 1 Figure 1 Figure 1 Figure 1 Figure 1 Figure 1 Figure 1 Figure 1 Figure 1 Figure 1 Figure 1 Figure 1 The reaction chamber 100 of the metal chemical vapor deposition device further comprises a graphite barrel 60 and a heat preservation felt 70, the graphite barrel 60 is arranged in the containing cavity, and the heat preservation felt 70 is arranged between the graphite barrel 60 and the side wall of the containing cavity. Thus, heat loss in the containing cavity can be effectively reduced, and the temperature in the containing cavity can be ensured, thereby ensuring the growth quality of the film.

[0055] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements indicated must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0056] In addition, the terms "first" and "second" are only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise specifically limited.

[0057] In the present application, unless otherwise specifically defined and limited, the terms "mounting", "connection", "connection", "fixing" and the like should be understood in a broad sense, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected, or it can be communicated; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the communication or interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0058] In the description of the present specification, the description referring to the terms "one embodiment", "some embodiments", "an example", "a specific example", or "some examples" and the like means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any appropriate manner in any one or more embodiments or examples. Furthermore, the person skilled in the art can combine and combine the different embodiments or examples described in the present specification and the features of the different embodiments or examples, without contradiction.

[0059] Although the embodiments of the present application have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, replacements and variations can be made to these embodiments without departing from the principles and purposes of the present application, and the scope of the present application is defined by the claims and their equivalents.

Claims

1. A reaction chamber (100) of a metal chemical vapor deposition apparatus, characterized in that, include: A cavity (10) having a receiving cavity formed therein; A cavity cover (80) is provided on the cavity (10) and surrounds the cavity (10) to form the receiving cavity; A wafer carrier device, comprising a mother disk (20) and a wafer carrier disk (21), wherein the mother disk (20) is rotatably disposed in the receiving cavity, and a plurality of wafer carrier disks (21) are rotatably distributed in a circular pattern on the mother disk (20), and the wafer carrier disks (21) are used to carry wafers (200); A reflector (30) is disposed at the bottom of the cavity cover (80) and opposite to the wafer carrier device. The reflector (30) includes a plate (31) and a reflective film (32). The reflective film (32) is disposed on the side surface of the plate (31) facing the mother disk (20).

2. The reaction chamber (100) of a metal chemical vapor deposition apparatus according to claim 1, characterized in that The reflective film (32) is at least one of tantalum oxide film, silicon dioxide film, titanium dioxide film, and zirconium oxide film.

3. The reactor chamber (100) of a metal chemical vapor deposition apparatus according to claim 1, characterized in that The thickness of the reflective film (32) is 10um-50um.

4. The reactor chamber (100) of a metal chemical vapor deposition apparatus according to claim 1, characterized in that The reflective film (32) is configured to have a reflectivity of greater than 99% for infrared thermal radiation with wavelengths of 1000nm-8000nm.

5. The reactor chamber (100) of a metal chemical vapor deposition apparatus according to claim 1, characterized in that The plate (31) is a quartz component or a graphite component.

6. The reactor chamber (100) of a metal chemical vapor deposition apparatus according to claim 1, characterized in that The reflector (30) has a guide surface (33) on the outer periphery of one side surface facing the mother disk (20). The guide surface (33) extends obliquely towards the mother disk (20) in the direction from the rotation axis of the mother disk (20) to the periphery of the mother disk (20).

7. The reactor chamber (100) of a metal chemical vapor deposition apparatus according to claim 6, characterized in that The periphery of the reflector (30) is bent in an arc toward the side where the mother disk (20) is located to form the guide surface (33).

8. The reactor chamber (100) of a metal chemical vapor deposition apparatus according to claim 1, characterized in that include: A spray head (40) is fixed to the reflector (30) and located on the side of the reflector (30) facing the mother disk (20). The spray head (40) is provided with air jet holes. An exhaust port (11) is formed on the cavity (10), and the exhaust port (11) is located on the side of the mother disk (20) away from the reflector (30).

9. The reactor chamber (100) of a metal chemical vapor deposition apparatus according to claim 1, characterized in that include: A heating element (50) is provided on the side of the wafer carrier away from the reflector (30), and the heating element (50) is used to heat the mother disk (20).

10. A metal chemical vapor deposition apparatus characterized by comprising: The reaction chamber (100) of the metal chemical vapor deposition apparatus according to any one of claims 1-9.

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