IGBT (Insulated Gate Bipolar Translator) detection probe structure and IGBT test board
By combining an inverted triangular emitter probe and a spherical gate probe with a spring structure, the problem of gate area damage caused by probe tips in existing IGBT test benches is solved, achieving higher test accuracy and stability while protecting the safety of the gate area.
Patent Information
- Application Number
- CN202423293735.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-30
- Publication Date
- 2026-01-02
- Estimated Expiration
- 2034-12-30
AI Technical Summary
The probes on existing IGBT test benches are prone to damaging the gate region, leading to instability and reliability issues in testing.
The emitter probe with an inverted triangular cross-section and the gate probe with a spherical shape, combined with a spring structure, ensures that the emitter region is in line contact and the gate region is in point contact, reducing the pressure on the gate region and absorbing mechanical impact force through the spring to improve stability.
This improves the accuracy and stability of IGBT chip testing, reduces testing errors caused by poor contact, and protects the safety and reliability of the gate region.
Smart Images
Figure CN223756799U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of chip testing, in particular to an IGBT detection probe structure and an IGBT test bench. BACKGROUND
[0002] Under the background of the vigorous development of modern power electronics technology, the reliability and performance evaluation of power semiconductor devices are extremely critical. As a commonly used power switching device, IGBT (Insulated Gate Bipolar Transistor) is widely used in AC drive, frequency converter and inverter fields. In order to ensure the normal operation of related equipment, the test of IGBT is indispensable, and this test needs the help of IGBT test bench.
[0003] As a special test tool, IGBT test bench can carry out high-precision measurement and evaluation on IGBT devices. It is mainly composed of test instruments, control units and multiple probes. The probe is particularly critical, which establishes physical contact with the IGBT device and collects current, voltage, temperature and other key parameters through sensors. Due to the special structure of IGBT wafer, the area ratio of gate region is small and can only withstand low voltage, and the area ratio of emitter region is large in the whole chip and needs to withstand large current and high voltage. However, the existing probe station adopts steel needle probe head, which is thin and easy to damage the gate region. Invention content
[0004] The purpose of the present application is to provide an IGBT detection probe structure and an IGBT test bench, which can improve the detection stability.
[0005] Embodiments of the present application are implemented as follows:
[0006] In one aspect of the present application, an IGBT detection probe structure is provided, which includes an emitter probe assembly and a gate probe assembly mounted on a mechanical arm. The emitter probe assembly includes a first sleeve and a first probe arranged in the first sleeve. The gate probe assembly includes a second sleeve and a second probe arranged in the second sleeve. The needle head of the first probe gradually decreases in width along the direction towards the needle tip to form a reverse triangular cross section. The needle head of the second probe is spherical. The first probe and the emitter region of the chip to be tested are in line contact, and the second probe and the gate region of the chip to be tested are in point contact.
[0007] Optionally, as an implementable way, a first spring is arranged in the first sleeve, and the two ends of the first spring abut against the first probe and the first sleeve respectively.
[0008] Optionally, as an implementable way, a second spring is arranged in the second sleeve, and the two ends of the second spring abut against the second probe and the second sleeve respectively.
[0009] Optionally, as an implementable manner, the first spring is provided with a first metal sheet at two ends, and the first spring abuts against the first probe and the first sleeve through the first metal sheet.
[0010] Optionally, as an implementable manner, the second spring is provided with a second metal sheet at two ends, and the second spring abuts against the second probe and the second sleeve through the second metal sheet.
[0011] Optionally, as an implementable manner, the first sleeve and the second sleeve are both conical.
[0012] Optionally, as an implementable manner, the first probe comprises a first needle segment and a first mounting segment, and the first mounting segment is connected with the first sleeve.
[0013] Optionally, as an implementable manner, the second probe comprises a second needle segment and a second mounting segment, and the second mounting segment is connected with the second sleeve.
[0014] In another aspect of the embodiments of the present application, an IGBT test bench is provided, comprising a test unit, a mechanical arm, and the IGBT detection probe structure according to any one of the above, the IGBT detection probe structure is arranged on the mechanical arm, and the IGBT detection probe structure is electrically connected with the test unit.
[0015] Optionally, as an implementable manner, the mechanical arm is provided with a probe mounting position, and the IGBT detection probe structure is mounted through the probe mounting position.
[0016] The beneficial effects of the embodiments of the present application include:
[0017] The IGBT detection probe structure and the IGBT test bench provided by the present application comprise an emitter probe assembly and a gate probe assembly mounted on a mechanical arm, the emitter probe assembly comprises a first sleeve and a first probe arranged in the first sleeve, the gate probe assembly comprises a second sleeve and a second probe arranged in the second sleeve, the needle head width of the first probe gradually decreases in the direction towards the needle tip to form an inverted triangular cross section, and the needle head of the second probe is spherical, so that the first probe and the emitter region of the chip to be tested are in line contact, this line contact mode can better adapt to the characteristics of the emitter region bearing large current and high voltage, ensure higher accuracy and stability when collecting the current, voltage and other parameters of the emitter region, reduce the test error caused by poor contact, and the second probe and the gate region of the chip to be tested are in point contact, compared with the contact mode of the existing steel needle, the pressure on the gate region is greatly reduced, damage to the gate region caused by the too thin needle head is avoided, and the safety and reliability of the gate region test are improved. Attached Figure Description
[0018] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0019] Figure 1 This is a schematic diagram of the IGBT detection probe structure provided in the embodiments of this application;
[0020] Figure 2 This is a schematic diagram of the emitter probe assembly in the IGBT detection probe structure provided in the embodiments of this application;
[0021] Figure 3 This is a schematic diagram of the gate probe assembly in the IGBT detection probe structure provided in the embodiments of this application.
[0022] Icons: 100 - IGBT detection probe structure; 110 - Emitter probe assembly; 111 - First sleeve; 112 - First probe; 1121 - First needle section; 1122 - First mounting section; 113 - First spring; 120 - Gate probe assembly; 121 - Second sleeve; 122 - Second probe; 1221 - Second needle section; 1222 - Second mounting section; 200 - Chip under test. Detailed Implementation
[0023] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.
[0024] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.
[0025] It should be noted that similar reference numerals and letters refer to like items in the accompanying drawings, and that, once an item is defined in one drawing, it should not require further defining and explaining in the subsequent drawings. In addition, the terms "first", "second", "third", etc. are used only to distinguish descriptions, and cannot be understood as indicating or implying relative importance.
[0026] In the description of the present application, it should be noted that, unless otherwise explicitly specified and limited, the terms "set", "install", "connect", "join" should be understood broadly, for example, can be fixedly connected, or can be detachably connected, or integrally connected; can be mechanically connected, or can be electrically connected; can be directly connected, or can be indirectly connected through an intermediate medium, or can be the internal communication of two elements. For those skilled in the art, the specific meanings of the above terms in the present application can be understood according to the specific circumstances.
[0027] Please refer to Figure 1 , Figure 2 and Figure 3 , the embodiment provides an IGBT detection probe structure 100, which comprises an emitter probe assembly 110 and a gate probe assembly 120 installed on a mechanical arm, the emitter probe assembly 110 comprises a first sleeve 111 and a first probe 112 arranged in the first sleeve 111, the gate probe assembly 120 comprises a second sleeve 121 and a second probe 122 arranged in the second sleeve 121, the needle head of the first probe 112 gradually decreases in the direction towards the needle tip to form an inverted triangular cross section, and the needle head of the second probe 122 is spherical, so that the first probe 112 and the emitter region of the chip to be tested 200 are in line contact, and the second probe 122 and the gate region of the chip to be tested 200 are in point contact.
[0028] When testing the IGBT chip, the mechanical arm drives the emitter probe assembly 110 and the gate probe assembly 120 to move above the IGBT chip to be tested. The first probe 112 in the emitter probe assembly 110 contacts the emitter region of the chip to be tested 200, and since the needle head of the first probe 112 is an inverted triangular cross section, it forms a line contact with the emitter region. The second probe 122 in the gate probe assembly 120 contacts the gate region of the chip to be tested 200, and since the needle head of the second probe 122 is spherical, it forms a point contact with the gate region. Through this contact mode, the probe can collect the current, voltage, temperature and other key parameters of the IGBT chip when it is working.
[0029] The gate probe assembly 120 of the present application adopts the second probe 122 with a spherical needle head to form a point contact with the gate region. Compared with the contact mode of the existing steel needle, this point contact mode greatly reduces the pressure on the gate region, avoids damage to the gate region caused by too thin needle head, and improves the safety and reliability of the gate region test. The first probe 112 of the emitter probe assembly 110 adopts an inverted triangular cross-section needle head to form a line contact with the emitter region of the chip 200 to be tested. This line contact mode can better adapt to the characteristics of the emitter region bearing large current and high voltage, ensure higher accuracy and stability when collecting the current, voltage and other parameters of the emitter region, and reduce the test errors caused by poor contact.
[0030] The IGBT detection probe structure 100 provided by the present application includes an emitter probe assembly 110 and a gate probe assembly 120 mounted on a mechanical arm, the emitter probe assembly 110 includes a first sleeve 111 and a first probe 112 arranged in the first sleeve 111, the gate probe assembly 120 includes a second sleeve 121 and a second probe 122 arranged in the second sleeve 121, the needle head of the first probe 112 gradually decreases in width along the direction towards the needle tip to form an inverted triangular cross-section, and the needle head of the second probe 122 is spherical, so that the first probe 112 and the emitter region of the chip 200 to be tested are in line contact. This line contact mode can better adapt to the characteristics of the emitter region bearing large current and high voltage, ensure higher accuracy and stability when collecting the current, voltage and other parameters of the emitter region, reduce the test errors caused by poor contact, and the second probe 122 and the gate region of the chip 200 to be tested are in point contact. Compared with the contact mode of the existing steel needle, this point contact mode greatly reduces the pressure on the gate region, avoids damage to the gate region caused by too thin needle head, and improves the safety and reliability of the gate region test.
[0031] In one feasible embodiment of the present application, as shown in Figure 1 , Figure 2 and Figure 3 , the first sleeve 111 is provided with a first spring 113, and the two ends of the first spring 113 abut against the first probe 112 and the first sleeve 111, respectively.
[0032] Further, the second sleeve 121 is provided with a second spring, and the two ends of the second spring abut against the second probe 122 and the second sleeve 121, respectively.
[0033] When the first probe 112 begins to contact the emitter region of the IGBT chip, the first spring 113 begins to play its buffering role. For example, if the mechanical arm is slightly faster or there is a certain positioning error, the first spring 113 can quickly compress and store the excess impact force as elastic potential energy, rather than directly transmitting it to the first probe 112 and the emitter region of the IGBT chip. In this way, the chip is protected from excessive impact force, and the stability and reliability of the contact between the first probe 112 and the emitter region of the IGBT chip are ensured.
[0034] When the second probe 122 begins to contact the gate region of the IGBT chip, the second spring begins to play its buffering role. For example, if the mechanical arm is slightly faster or there is a certain positioning error, the second spring can quickly compress and store the excess impact force as elastic potential energy, rather than directly transmitting it to the second probe 122 and the gate region of the IGBT chip. In this way, the chip is protected from excessive impact force, and the stability and reliability of the contact between the second probe 122 and the gate region of the IGBT chip are ensured.
[0035] The ingenious application of the first spring 113 and the second spring in the probe structure brings remarkable stability and efficiency improvement to the testing process. During the contact between the probe and the chip, the spring can effectively absorb various impact forces generated by mechanical movement, whether from the operation error of the mechanical arm or external vibration interference of the test bench. This makes the contact between the probe and the chip always stable and reliable, avoiding fluctuations or interruptions in test data caused by unstable contact.
[0036] In one feasible embodiment of the present application, as shown in Figure 1 , Figure 2 and Figure 3 , the first spring 113 is provided with first metal sheets at both ends, and the first spring 113 is supported by the first metal sheets against the first probe 112 and the first sleeve 111.
[0037] Further, the second spring is provided with second metal sheets at both ends, and the second spring is supported by the second metal sheets against the second probe 122 and the second sleeve 121.
[0038] Specifically, during the entire testing process, the first spring 113 and the second spring always maintain a certain elastic force, which acts on the first probe 112 and the first sleeve 111 through the first metal sheets, and acts on the second probe 122 and the second sleeve 121 through the second metal sheets, to ensure the formation of a stable electrical path during the detection of the emitter probe assembly 110 and the gate probe assembly 120 with the chip to be tested 200. To ensure the stability of parameter detection.
[0039] In one possible implementation of the present application, as shown in Figure 1 、 Figure 2 and Figure 3 , the first sleeve 111 and the second sleeve 121 are both conical.
[0040] Specifically, the first sleeve 111 and the second sleeve 121 are both conical to ensure that the first probe 112 is stably installed in the first sleeve 111 and the second probe 122 is stably installed in the second sleeve 121.
[0041] Further, the first probe 112 includes a first needle segment 1121 and a first mounting segment 1122, and the first mounting segment 1122 is connected with the first sleeve 111. The first needle segment 1121 can be provided with a plurality of inverted triangular needle tips, so that the first probe 112 can form a plurality of line contacts when contacting the emitter region of the IGBT chip.
[0042] Further, the second probe 122 includes a second needle segment 1221 and a second mounting segment 1222, and the second mounting segment 1222 is connected with the second sleeve 121.
[0043] In assembling the emitter probe assembly 110, first, the first metal sheet is installed on both sides of the first spring 113, and then the first spring 113 with the first metal sheet installed is placed into the first sleeve 111, so that one end of the spring is in close contact with the first sleeve 111 through the first metal sheet. Then, the first mounting segment 1122 of the first probe 112 is inserted into the first sleeve 111, so that the other end of the first spring 113 is in close contact with the first probe 112 through the first metal sheet, and the assembly of the emitter probe assembly 110 is completed.
[0044] In assembling the gate probe assembly 120, first, the second metal sheet is installed on both sides of the second spring, and then the second spring with the second metal sheet installed is placed into the second sleeve 121, so that one end of the spring is in close contact with the second sleeve 121 through the second metal sheet. Then, the first mounting segment 1122 of the second probe 122 is inserted into the second sleeve 121, so that the other end of the second spring is in close contact with the second probe 122 through the second metal sheet, and the assembly of the emitter probe assembly 110 is completed.
[0045] The assembled emitter probe assembly 110 and gate probe assembly 120 are installed on the mechanical arm according to the predetermined position and direction, to ensure that the mechanical arm can accurately control the movement and positioning of the probe assembly, and make necessary electrical connection and mechanical fixation, to ensure the stability and reliability of the entire probe structure during the test process.
[0046] In an embodiment of the present application, an IGBT test platform is provided, comprising a test unit, a mechanical arm, and the IGBT detection probe structure 100 in the foregoing embodiment, the IGBT detection probe structure 100 being arranged on the mechanical arm, and the IGBT detection probe structure 100 being electrically connected to the test unit.
[0047] Further, the mechanical arm is provided with a probe mounting position, and the IGBT detection probe structure 100 is mounted through the probe mounting position.
[0048] After the assembled emitter probe assembly 110 and gate probe assembly 120 are mounted on the probe mounting position of the mechanical arm in a predetermined position and direction, it is ensured that the mechanical arm can accurately control the movement and positioning of the probe assembly, and necessary electrical connection and mechanical fixation are performed, so as to ensure the stability and reliability of the entire probe structure during the test.
[0049] The above only describes the preferred embodiments of the present application and is not intended to limit the present application. For those skilled in the art, the present application can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims
1. An IGBT detection probe structure, characterized by, The emitter probe assembly and the gate probe assembly are installed on a mechanical arm, the emitter probe assembly comprises a first sleeve and a first probe arranged in the first sleeve, the gate probe assembly comprises a second sleeve and a second probe arranged in the second sleeve, a needle head of the first probe gradually decreases in width along a direction towards a needle tip to form an inverted triangular cross section, a needle head of the second probe is spherical, the first probe is in linear contact with an emitter region of a chip to be tested, and the second probe is in point contact with a gate region of the chip to be tested.
2. The IGBT detection probe structure of claim 1, wherein, The first sleeve is provided with a first spring, and two ends of the first spring abut against the first probe and the first sleeve respectively.
3. The IGBT detection probe structure of claim 1, wherein, The second sleeve is provided with a second spring, and two ends of the second spring abut against the second probe and the second sleeve respectively.
4. The IGBT detection probe structure of claim 2, wherein, The first spring is provided with first metal sheets at two ends, and the first spring abuts against the first probe and the first sleeve through the first metal sheets.
5. The IGBT detection probe structure of claim 3, wherein, The second spring is provided with second metal sheets at two ends, and the second spring abuts against the second probe and the second sleeve through the second metal sheets.
6. The IGBT detection probe structure of claim 1, wherein, The first sleeve and the second sleeve are both conical.
7. The IGBT detection probe structure of claim 1, wherein, The first probe comprises a first needle head section and a first mounting section, and the first mounting section is connected with the first sleeve.
8. The IGBT detection probe structure of claim 1, wherein, The second probe comprises a second needle head section and a second mounting section, and the second mounting section is connected with the second sleeve.
9. An IGBT test bench, characterized by, The IGBT detection probe structure of any one of claims 1-8 is arranged on the mechanical arm, and the IGBT detection probe structure is electrically connected with the test unit.
10. The IGBT test bench of claim 9, wherein, The mechanical arm is provided with a probe mounting position, and the IGBT detection probe structure is mounted through the probe mounting position.