Low-impedance high-sensitivity sensor structure

Abstract

The utility model discloses a sensor structure with low impedance and high sensitivity. The sensor structure comprises a cover plate. The back of the cover plate is connected with the front of the substrate; the upper 1RX wire is arranged on the back surface of the cover plate, and the upper 1RX wire comprises a first upper wire and a second upper wire; the lower 1RX channel is arranged on the front surface of the base material, and the lower 1RX channel comprises an RX channel; one end of the second lower wire is connected with the RX channel, and the other end of the second lower wire is connected with the FPC; the left side end of the first lower wire and the right side end of the third lower wire are respectively connected with the tail ends of the first upper wire and the second upper wire; the right side end of the first lower wire and the left side end of the third lower wire are connected with the FPC; a channel wire above the RX channel is connected with the head ends of the first upper wire and the second upper wire; the 2TX channel is arranged on the back face of the base material. According to the utility model, the lower 1RX channel is divided into two resistors of 0.5 R2 which are arranged in parallel, the impedance of the RX channel is reduced by 75%, the impedance of the RX channel is reduced, and the sensitivity is high.

Description

Technical Field

[0001] This utility model relates to a sensor structure, and more particularly to a low-impedance, high-sensitivity sensor structure. Background Technology

[0002] Conventional touchscreen sensor structures are typically designed as 2T1R or 1T1R, where T stands for Transmit and R stands for Receive. For example... Figure 1 As shown, in the 2T1R sensor structure, the TX left-side trace 100 and the TX right-side trace 101 are connected horizontally to the in-plane channels, forming a 2T channel, which serves as the driving capacitor layer of the touchscreen sensor. The RX trace 102 is connected vertically to the in-plane channels, forming a 1R channel, which serves as the sensing capacitor layer of the touchscreen sensor. The 2T channel and the 1R channel are integrated together and connected to the IC via ACF conductive adhesive and FPC103, forming the driving capacitor layer and sensing capacitor layer of the touchscreen sensor, which serve to receive and transmit electrical signals. Finally, an adhesive is used to bond the cover plate 1 to the sensor to form the touchscreen.

[0003] In practice, the lower the impedance of the TX and RX channels, the less loss there is in receiving and transmitting electrical signals. The shorter the time required for the capacitor to fully charge, the less potential and signal will be generated after the capacitor is fully charged. The more complete the signal enters the IC, the simpler and faster the IC's signal analysis algorithm will be. This translates to faster response and smoother touch for the user, meaning higher touchscreen sensitivity.

[0004] Compared to a 1T1R sensor structure design, the TX channel impedance is R1, and the RX channel impedance is R2. In a 2T1R touchscreen sensor structure design, the left trace of the TX channel connects to the left TX channel with an impedance of 0.5R1, and the right trace connects to the right TX channel with an impedance of 0.5R1. Since the left and right traces are connected in parallel to the TX channel, the TX channel impedance is effectively halved, i.e., 0.25R1, which is relatively low. The RX channel is a single-sided trace, with a single line connecting to the RX channel and an impedance of R2. Furthermore, the RX channel lacks a parallel structure, so its impedance cannot be reduced to 0.25R2. Therefore, the RX channel impedance does not decrease relative to the initial channel impedance. This results in a relatively high channel impedance in a conventional 2T1R touchscreen sensor structure design, reducing the touchscreen's sensitivity and thus affecting the user's actual experience. Utility Model Content

[0005] The utility model discloses a low impedance high sensitivity's sensor structure, RX channel's impedance is low, and the sensitivity of touch screen is high, and customer experience is good.

[0006] In order to reach above-mentioned purpose, the utility model discloses a low impedance high sensitivity's sensor structure, including cover plate, upper 1RX wiring, ACF conductive glue, lower 1RX channel, substrate and 2TX channel, the back of cover plate is linked with the front of substrate,

[0007] The upper 1RX wiring is arranged on the back of the cover plate, and the upper 1RX wiring includes first upper wiring and second upper wiring arranged on the left and right.

[0008] The lower 1RX channel is arranged on the front of the substrate, and the lower 1RX channel includes RX channel, first lower wiring, second lower wiring and third lower wiring, one end of the second lower wiring is connected with the RX channel, and the other end is connected with the ACF conductive glue and FPC in the bonding area of the substrate.

[0009] The left end of the first lower wiring and the right end of the third lower wiring are connected with the tail end of the first upper wiring and the second upper wiring respectively through the ACF conductive glue, and the right end of the first lower wiring and the left end of the third lower wiring are connected with the ACF conductive glue and FPC in the bonding area of the substrate through the ACF conductive glue.

[0010] The upper side of the RX channel is provided with channel wiring, and the channel wiring is connected with the head end of the first upper wiring and the head end of the second upper wiring through the ACF conductive glue, and the 2TX channel is arranged on the back of the substrate.

[0011] Further, the material of the cover plate is glass, PC, PMMA, PET, TAC or PI.

[0012] Further, the line width and line spacing of the upper 1RX wiring are 6mm-30mm.

[0013] Further, the first upper wiring and the second upper wiring are symmetrically arranged in L shape, and the head end and the tail end of the first upper wiring and the second upper wiring are oppositely arranged with the head end and the tail end of the second upper wiring.

[0014] Further, the tail end and the head end of the first upper wiring and the second upper wiring are circular, and the channel wiring and the left end of the first lower wiring and the right end of the second lower wiring are circular.

[0015] Further, the first lower wiring and the third lower wiring are symmetrically arranged at the two ends of the second lower wiring, and the first lower wiring and the third lower wiring are in linear shape.

[0016] Due to the application of the above technical solution, this utility model has the following advantages compared with the prior art:

[0017] This invention presents a low-impedance, high-sensitivity sensor structure that divides the lower 1RX channel into two 0.5R2 resistors. One 0.5R2 resistor represents the lower portion of the R2 channel impedance of the 1RX channel connected by the second lower trace, while the other 0.5R2 resistor represents the lower portion of the R2 channel impedance of the lower 1RX channel connected by the first and second upper traces. These two 0.5R2 resistors are connected in parallel, and the total impedance of the two parallel 0.5R2 resistors is R2 / 4, which reduces the RX channel impedance by 75%, significantly lowering the RX channel impedance of the touchscreen and achieving a low-impedance RX channel for the touchscreen sensor. At the same time, the TX channel impedance is also reduced by 75%, resulting in high sensitivity of the touchscreen sensor and a better user experience. Attached Figure Description

[0018] The technical solution of this utility model will be further described below with reference to the accompanying drawings:

[0019] Figure 1 This is a schematic diagram of the structure when existing technology is connected to an FPC;

[0020] Figure 2 This is a schematic diagram of the structure of an embodiment of the present invention when connected to an FPC;

[0021] Figure 3 This is a schematic diagram of the structure when the cover plate and the upper 1RX trace are connected in one embodiment of the present invention;

[0022] Figure 4 This is a schematic diagram of the structure when the substrate and the lower 1RX channel are connected in one embodiment of the present invention;

[0023] Figure 5 This is a schematic diagram of the structure when the upper 1RX trace and the lower 1RX channel are connected in one embodiment of the present invention;

[0024] Figure 6 for Figure 5 Enlarged view of part A in the image;

[0025] Figure 7 This is a schematic diagram of the structure when the 2TX channel is located on the substrate in one embodiment of the present invention;

[0026] Figure 8 This is a schematic diagram of the structure when two 0.5R2 resistors are connected to an IC in this utility model;

[0027] Wherein: 1, cover plate; 2, upper 1RX wire; 5, lower 1RX channel; 6, base material; 7, 2TX channel; 20, first upper wire; 21, second upper wire; 60, RX channel; 61, first lower wire; 62, second lower wire; 63, third lower wire; 64, channel wire; 100, TX left side wire; 101, TX right side wire; 102, RX wire; 103, FPC. DETAILED DESCRIPTION

[0028] In order to make the personnel in the technical field better understand the scheme of the present application, the technical scheme in the embodiments of the present application will be clearly and completely described below in combination with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by the person skilled in the art without creative labor should belong to the scope of protection of the present application.

[0029] The utility model discloses a low impedance high sensitivity's sensor structure to solve the problem of the relative low of RX channel impedance in prior art sensor structure, thereby reducing touch screen sensitivity.

[0030] For the convenience of understanding, the specific process in the embodiments of the present application will be described below. Please refer to Figures 2 to 7 The low impedance high sensitivity sensor structure in the embodiments of the present application comprises a cover plate 1, an upper 1RX wire 2, a lower 1RX channel 5, a base material 6 and a 2TX channel 7.

[0031] The upper 1RX wire 2 is arranged on the back surface of the cover plate 1, and the upper 1RX wire 2 comprises a first upper wire 20 and a second upper wire 21 arranged left and right, and the first end and the tail end of the first upper wire 20 are arranged opposite to the first end and the tail end of the second upper wire 21 respectively.

[0032] The lower 1RX channel 5 is arranged on the front surface of the base material 6, and the lower 1RX channel 5 comprises an RX channel 60, a first lower wire 61, a second lower wire 62 and a third lower wire 63. A plurality of RX channels are arranged vertically on the base material 6, and the first lower wire 61, the second lower wire 62 and the third lower wire 63 are arranged below the plurality of RX channels. One end of the second lower wire 62 is connected with the RX channel 60, and the other end is connected with ACF conductive adhesive and FPC 103 together in the bonding area of the base material 6.

[0033] The left end of the first lower trace 61 and the right end of the third lower trace 63 are connected to the ends of the first upper trace 20 and the second upper trace 21 respectively through ACF conductive glue, and the right end of the first lower trace 61 and the left end of the third lower trace 63 are connected to the ends of the first upper trace 20 and the second upper trace 21 in the bonding area of the substrate 6 through ACF conductive glue and FPC 103.

[0034] The RX channel 60 is provided with a channel trace 64 connected to the first ends of the first upper trace 20 and the second upper trace 21 through ACF conductive glue, and the 2TX channel 7 is arranged on the back of the substrate 6.

[0035] The low-impedance high-sensitivity sensor structure of the utility model, relative to 1T1R's sensor structure, TX channel impedance is R1, RX channel impedance is R2, this sensor structure divides lower 1RX channel 5 into two 0.5R2 resistances;One 0.5R2 resistance is the R2 lower part channel impedance connected by the second lower trace 62, and the other 0.5R2 resistance is the R2 lower part channel impedance of lower 1RX channel 5 connected by the first upper trace 20 and the second upper trace 21, the two 0.5R2 resistances are parallel structure, and the total impedance of the two 0.5R2 parallel resistances is R2 / 4, so that the RX channel impedance is reduced by 75%, which greatly reduces the RX channel impedance of the touch screen, realizes the RX low-impedance channel of the touch screen sensor, and the sensitivity of the touch screen is high.

[0036] Based on Figure 3 Further, the upper 1RX trace 2 is prepared by evaporating or magnetron sputtering a conductive layer on the back of the cover plate 1, and then performing yellow light processes such as exposure, development and etching to prepare RX traces with certain line width, line spacing and shape. The line width and line spacing of the upper 1RX trace 2 can be 6mm / 6mm-30mm / 30mm. The first upper trace 20 and the second upper trace 21 in the upper 1RX trace 2 are distributed in left-right symmetry, and the shapes of the two are "L" type structures. At the same time, the first ends and the ends of the first upper trace 20 and the second upper trace 21 are arranged opposite to the first ends and the ends of the second upper trace 21. Secondly, in this embodiment, the number of the first upper trace 20 and the second upper trace 21 is 6 parallelly arranged.

[0037] In addition, the first ends and the ends of the first upper trace 20 and the second upper trace 21 are circular, so as to be connected together with the lower 1RX channel 5 through ACF conductive glue.

[0038] Further, the material of the cover plate 1 is glass, PC, PMMA, PET, TAC or PI, and the thickness can be between 0.06mm and 2mm, and the back surface of the cover plate 1 has a durometer value of greater than or equal to 32, which is beneficial to improve the adhesion of the upper 1RX trace 2 on the cover plate 1.

[0039] Further, the ACF conductive adhesive is a transparent anisotropic conductive adhesive, which can realize the conduction of two conductive interfaces in the vertical direction, and the conductive particles have a particle size of 5um to 20um, and the conductive particles are wrapped by a sticky resin, and need to be broken under certain pressure, temperature and time conditions to connect the two conductive interfaces.

[0040] Referring to Figure 4 Further, the lower 1RX channel 5 is a trace and an in-plane metal mesh with a certain line width and line spacing prepared by evaporation or magnetron sputtering film plating on the surface of the substrate 6, and then exposed, developed and etched through yellow light process.

[0041] The lower 1RX channel 5 includes an RX channel 60, a first lower trace 61, a second lower trace 62 and a third lower trace 63; the left side end of the first lower trace 61 and the right side end of the third lower trace 63 are circular, so that the ACF conductive adhesive can be conveniently connected with the circular-shaped ends in the first upper trace 20 and the second upper trace 21; at the same time, the RX channel 60 is provided with a circular-shaped channel trace 64 above, so that the ACF conductive adhesive can be conveniently connected with the circular-shaped first end of the first upper trace 20 and the second upper trace 21.

[0042] In addition, the first lower trace 61 and the third lower trace 63 are symmetrically arranged at both ends of the second lower trace 62, and the first lower trace 61 and the third lower trace 63 are in a straight line shape, and the number of lines is matched with the first upper trace and the second upper trace in order to adapt to the first upper trace and the second upper trace.

[0043] In addition, referring to Figure 7 The 2TX channel 6 and the channel of the sensor structure of the conventional touch screen 2T1R are the same.

[0044] Referring to Figure 8 The impedance of the RX equivalent circuit of the conventional touch screen 2T1R is R2, and the sensor structure divides the lower 1RX channel into two parallel structures of 0.5R2 resistors, and the total impedance of the two parallel 0.5R2 resistors is R2 / 4, which makes the RX channel impedance drop by 75%, greatly reduces the RX channel impedance of the touch screen, and realizes the RX low-impedance channel of the touch screen sensor.

[0045] The 2TX channel is the same as the prior art, and the impedance is relatively small, so that the low-impedance channel of the touch screen sensor is realized.

[0046] In conclusion, the low-impedance high-performance sensor structure can reduce the TX conduction impedance and RX channel impedance by 75%, realize the low-impedance channel of the touch screen sensor, and has a small loss of received and transmitted electric signals, so that the time required for the capacitor to be fully charged is short, and the electric potential and signal are generated after the capacitor is fully charged, the signal is more complete when entering the IC, the signal analysis algorithm of the IC is more simple and fast, the feedback to the user is faster, the touch is smoother, and the higher the sensitivity of the touch screen, the better the experience of the customer.

[0047] The above-described embodiments are only used to illustrate the technical solutions of the present application, rather than limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that the technical solutions recorded in the foregoing embodiments can be modified, or some technical features can be replaced by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A low impedance high sensitivity sensor structure, characterized by: The application relates to a 1RX-2TX connector, which comprises a cover plate (1), an upper 1RX wire (2), ACF conductive glue, a lower 1RX channel (5), a base material (6) and a 2TX channel (7). The upper 1RX wire (2) is arranged on the back of the cover plate (1), and the upper 1RX wire (2) comprises a first upper wire (20) and a second upper wire (21) arranged on the left and right sides. The lower 1RX channel (5) is arranged on the front of the base material (6), and the lower 1RX channel (5) comprises an RX channel (60), a first lower wire (61), a second lower wire (62) and a third lower wire (63); one end of the second lower wire (62) is connected with the RX channel (60), and the other end is connected with the ACF conductive glue and an FPC (103) in the bonding area of the base material (6). The left end of the first lower wire (61) and the right end of the third lower wire (63) are connected with the tail ends of the first upper wire (20) and the second upper wire (21) through the ACF conductive glue, and the right end of the first lower wire (61) and the left end of the third lower wire (63) are connected with the ACF conductive glue and the FPC (103) in the bonding area of the base material (6) through the ACF conductive glue. A channel wire (64) is arranged above the RX channel (60), and the channel wire (64) is connected with the head ends of the first upper wire (20) and the second upper wire (21) through the ACF conductive glue; and the 2TX channel (7) is arranged on the back of the base material (6).

2. The low impedance high sensitivity sensor structure as claimed in claim 1, wherein: The material of the cover plate (1) is glass, PC, PMMA, PET, TAC or PI.

3. The low impedance high sensitivity sensor structure as claimed in claim 1, wherein: The line width and the line distance of the upper 1RX wire (2) are both 6mm-30mm.

4. The low impedance high sensitivity sensor structure as claimed in claim 1, wherein: The first upper wire (20) and the second upper wire (21) are arranged in a symmetrical L shape, and the head ends and the tail ends of the first upper wire (20) and the second upper wire (21) are arranged opposite to the head ends and the tail ends of the second upper wire (21) respectively.

5. The low impedance high sensitivity sensor structure as claimed in claim 1, wherein: The tail ends and the head ends of the first upper wire (20) and the second upper wire (21) are circular, and the channel wire (64), the left end of the first lower wire (61) and the right end of the second lower wire (62) are also circular.

6. The low impedance high sensitivity sensor structure as claimed in claim 1, wherein: The first lower wire (61) and the third lower wire (63) are symmetrically arranged at the two ends of the second lower wire (62), and the first lower wire (61) and the third lower wire (63) are linear.

Images