Film cutting equipment

Abstract

The embodiment of the utility model provides thin film cutting equipment which is used for removing a thin film covering a wafer, the wafer is provided with a notch mark, and the thin film cutting equipment comprises a carrying table for carrying the wafer; the laser is arranged above the carrying table and emits a detection light beam to the first end face of the thin film; the detector is arranged above the carrying table and is used for receiving a reflected light beam reflected by the first end surface of the thin film and generating a detection signal; the first cutting tool is arranged above the carrying table and used for cutting the thin film located on the notch marks, the first cutting tool is provided with a plurality of cutters, the cutters are independently controlled, and the shape of the cutting part of one cutter corresponds to the shape of one notch mark; the processor is electrically connected with the laser, the detector and the first cutting tool and determines the shape of the notch mark covered by the film, and the shape of the notch mark is determined based on the light intensity value represented by the detection signal. By adopting the technical scheme, the cleanliness of the notch mark can be improved.

Description

Technical Field

[0001] This disclosure relates to the field of thin film cutting technology, and more particularly to a thin film cutting device. Background Technology

[0002] In the semiconductor manufacturing process, during the wafer back-side polishing process, a film-coating process is required to cover the wafer's crystal surface (i.e., the side corresponding to the back side) with a protective film (BG tape) to protect the devices on the wafer's crystal surface from damage.

[0003] In actual wafer lamination processes, to facilitate wafer positioning, a portion of the protective film needs to be removed to expose the notch. However, existing methods cannot completely remove the protective film at the notch.

[0004] Therefore, how to provide a technical solution to improve the cleanliness of the notch marking area has become an urgent technical problem to be solved. Utility Model Content

[0005] In view of this, embodiments of the present disclosure provide a thin film cutting apparatus that can improve the cleanliness of the notch marking area.

[0006] This disclosure provides a thin-film dicing apparatus for removing a thin film covering a wafer, the wafer having a notch mark, the thin-film dicing apparatus comprising:

[0007] A stage for supporting a wafer, wherein the back side of the wafer is in contact with the stage, and a thin film is covered on the crystal surface of the wafer, wherein the crystal surface is the end face of the wafer away from the stage;

[0008] A laser is positioned above the stage and emits a probe beam toward the first end face of the thin film, wherein the first end face is the end face of the thin film away from the wafer.

[0009] A detector positioned above the stage to receive the reflected light beam reflected by the first end face of the thin film and generate a detection signal;

[0010] A first cutting tool is positioned above the stage to cut the film located on the notch mark. The first cutting tool has multiple blades, each of which is independently controlled, and the shape of the cutting part of one blade corresponds to the shape of one notch mark.

[0011] A processor electrically connected to the laser, the detector, and the first cutting tool, respectively, determines the shape of the notch mark covered by the thin film, wherein the shape of the notch mark is determined based on the light intensity value characterized by the detection signal.

[0012] Optionally, the laser's pose is adjustable, while the detector's pose is fixed.

[0013] Optionally, the thin film cutting device further includes a deflection component disposed along the transmission path of the reflected light beam to change the transmission direction of the reflected light beam.

[0014] Optionally, the poses of both the laser and the detector are fixed;

[0015] The thin film cutting equipment further includes: a rotating component disposed below the stage, which drives the wafer to move and changes the incident point position of the probe beam on the thin film, wherein the direction of the rotation of the wafer is perpendicular to the crystal surface of the wafer.

[0016] Optionally, the rotating component includes: a rotating shaft connected to the stage, and a driver connected to the rotating shaft and the processor.

[0017] Optionally, the stage has a bearing surface with through holes, and an adsorption component disposed through the through holes to adsorb the wafer during its movement.

[0018] Optionally, the stage further includes a limiting member disposed on the bearing surface to restrict relative movement between the wafer and the bearing surface.

[0019] Optionally, the thin film cutting device further includes a second cutting tool disposed above the stage, electrically connected to the processor, for cutting the thin film covering the edge of the wafer.

[0020] Optionally, the film cutting device satisfies at least one or more of the following:

[0021] The detector includes at least one of the following: a photodetector circuit, a PIN photodiode, an avalanche photodiode, a single-photon avalanche diode, or a silicon photomultiplier tube;

[0022] The laser includes at least one of a vertical cavity surface-emitting laser, an edge-emitting laser, or a distributed feedback laser.

[0023] Optionally, the cutting portion of the tool is shaped as at least one of U-shape or V-shape.

[0024] Compared with the prior art, the technical solution of the present disclosure has the following advantages:

[0025] In the thin film dicing apparatus provided in this embodiment, the wafer is placed on a stage. Through the cooperation between a laser and a detector, a detection signal can be generated targeting the first end face of the thin film. This detection signal can represent the shape of the notch mark covering the thin film through the light intensity value. A processor electrically connected to the detector can then determine the shape of the notch mark covered by the thin film based on the detection signal. Since the first dicing tool has multiple cutters, and the shape of each cutter corresponds to the shape of a notch mark, a cutter adapted to the notch mark can be selected from among the multiple cutters. This allows for the complete removal of the thin film covering the notch mark, improving the cleanliness of the wafer at the notch mark. Furthermore, the cutters are independent of each other, reducing the difficulty of thin film removal. Attached Figure Description

[0026] To more clearly illustrate the technical solutions of the embodiments of this disclosure, the drawings used in the description of the embodiments of this disclosure or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this specification. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 A schematic diagram of a film removal process is shown.

[0028] Figure 2 A schematic diagram of the structure of the thin film cutting device in the first embodiment of this disclosure is shown.

[0029] Figure 3 A schematic diagram of the structure of the thin film cutting device in the second embodiment of this disclosure is shown.

[0030] Figure 4 A schematic diagram of the structure of the thin film cutting device according to the third embodiment of this disclosure is shown.

[0031] Figure 5 A schematic diagram of a film removal process is shown in one embodiment of this disclosure. Detailed Implementation

[0032] As described in the background art, when performing the wafer back-side grinding process, it is necessary to expose the notch mark.

[0033] In the actual stripping process, on the one hand, when performing the stripping operation, the thin film covering the wafer edge is generally removed first, and the protective film on the notch mark is removed last. At the location of the notch mark, the cutting tool (e.g., a blade) has a certain width. When the blade is positioned to completely fit the edge of the notch mark during the cutting operation, the blade cannot rotate or turn around within the space of the notch mark. For example... Figure 1The diagram shows a working scenario for removing the protective film, which prevents the protective film P on the notch mark N from being completely removed.

[0034] On the other hand, the shape of the notch mark N is different for different types of wafers W, and existing solutions usually use a cutting tool to remove the protective film, which also makes it impossible to completely remove the protective film P covering the notch mark N.

[0035] Thus, if the protective film P still remains on the notch mark N, the alignment operation of the wafer W may not be possible, which will reduce the thinning effect of the wafer W and may even cause the protective film P to contaminate the processing machine.

[0036] It should be noted that, in order to illustrate the residual protective film P at the notch mark N, Figure 1 The protective film covering the crystal surface is not shown.

[0037] To address the aforementioned technical problems, this disclosure provides a thin-film dicing apparatus for removing a thin film covering a wafer, the wafer having a notch mark. The thin-film dicing apparatus includes: a stage supporting the wafer, the back side of the wafer contacting the stage, the thin film covering a crystal surface of the wafer, the crystal surface being the end face of the wafer away from the stage; a laser disposed above the stage for emitting a probe beam toward a first end face of the thin film, the first end face being the end face of the thin film away from the wafer; a detector disposed above the stage for receiving a reflected beam of light reflected from the first end face of the thin film and generating a probe signal; a first dicing tool disposed above the stage for cutting the thin film located on the notch mark, the first dicing tool having multiple cutters, each cutter being independently controlled, and the shape of the cutting portion of one cutter corresponding to the shape of a notch mark; and a processor electrically connected to the laser, the detector, and the first dicing tool to determine the shape of the notch mark covered by the thin film, wherein the shape of the notch mark is determined based on the light intensity value characterized by the probe signal.

[0038] In the thin film dicing equipment of this solution, the wafer is placed on a stage. Through the cooperation between the laser and the detector, a detection signal can be generated targeting the first end face of the thin film. This detection signal can represent the shape of the notch mark covering the thin film through the light intensity value. Then, the processor electrically connected to the detector can determine the shape of the notch mark covered by the thin film based on the detection signal. Since the first dicing tool has multiple cutters, and the shape of each cutter corresponds to the shape of a notch mark, a cutter that matches the notch mark can be selected from multiple cutters, thereby completely removing the thin film covering the notch mark and improving the cleanliness of the notch mark. Furthermore, each cutter is independent of the others, which can reduce the difficulty of thin film removal.

[0039] To make the above-mentioned objects, features and advantages of the embodiments of this disclosure more apparent and understandable, the specific embodiments of this disclosure will be described in detail below with reference to the accompanying drawings.

[0040] See Figure 2 The diagram shown is a structural schematic of a thin film cutting device in the first embodiment of this disclosure. The thin film cutting device in this disclosure can be used to remove the thin film P covering the wafer W.

[0041] More specifically, wafer W has a notch mark N. A thin film covers both the crystal plane of wafer W (not shown) and the notch mark N. The notch mark N is used to perform alignment operations on wafer W, and therefore needs to be exposed.

[0042] like Figure 2 As shown, the film cutting equipment may include:

[0043] A stage 10 is used to support a wafer W, the back of the wafer W is in contact with the stage 10, and a thin film P is used to cover the crystal surface of the wafer W, the crystal surface being the end face of the wafer W away from the stage.

[0044] Specifically, the side of the wafer W that contacts the stage 10 is the back surface, and a thin film P is covered on the crystal surface. This solution is used to remove the thin film P covering the edge of the stage 10 and the notch mark N.

[0045] Furthermore, by placing the wafer W on the stage 10, the stability during the film removal process can be improved, allowing the remaining thin film P to still cover the crystal surface well and enhancing the protective effect of the thin film P.

[0046] A laser 20 is positioned above the stage 10 to emit a detection beam L1 toward the first end face of the thin film P; and a detector 30 is positioned above the stage 10 to receive the reflected beam L2 reflected by the first end face of the thin film P and generate a detection signal.

[0047] Specifically, the laser 20 and the detector 30 are used together to measure different points on the first end face of the thin film P.

[0048] In some embodiments, the probe beam L1 emitted by the laser 20 can illuminate any point on the first end face of the thin film P. After reflection, a reflected beam L2 corresponding to the probe beam L1 can be formed. When the detector 30 receives the reflected beam L2, it can generate a detection signal.

[0049] In some embodiments, the detection signal can characterize the light intensity value of the reflected beam L2 after reflection from any point on the surface of the thin film P. Correspondingly, the coordinates of any point can also be determined through a pre-established coordinate mapping relationship.

[0050] In some embodiments, the position of the notch mark N can be determined by the light intensity value corresponding to the reflected beam L2. Furthermore, the shape of the notch mark N can be determined by statistically analyzing the coordinates of each position point.

[0051] Specifically, if the film P is covered by the crystal surface of wafer W, the penetration of the probe beam L1 is low, resulting in a greater amount of reflection of the probe beam L1, thus leading to a higher light intensity at that location. Furthermore, with other parameters remaining constant, there are multiple locations (which could refer to the locations of the covered crystal surfaces) where the light intensity is high and tends to be the same.

[0052] If the film P is covered by a notch mark N, the penetration of the probe beam L1 is low, resulting in less reflection of the probe beam L1 and thus a lower light intensity at that location. Furthermore, with other parameters remaining constant, there are multiple locations (which could refer to the locations covered by the notch mark) where the light intensity is low and tends to be similar.

[0053] This allows us to determine the area and shape of the notch mark N covered by the thin film P based on changes in light intensity.

[0054] In some embodiments, laser 20 may include multiple lasers. Laser 20 may include one or more types of lasers. For example, laser 20 may include semiconductor lasers, fiber lasers, or other types of lasers. For example, semiconductor lasers may include vertical cavity surface emitting lasers (VCSELs), edge emitting lasers (EELs), distributed feedback lasers (DFBs), or similar devices. The above are merely examples, and this disclosure does not limit the type of laser.

[0055] In some embodiments, detector 30 may include multiple detectors. Detector 30 may include one or more detectors. For example, detector 30 may include: a photodetector circuit, a PIN photodiode (PINPD), an avalanche photodiode (APD), a single-photon avalanche diode (SPAD), a silicon photomultiplier (SiPM), or similar devices. The above are merely examples, and this disclosure does not limit the type of detector.

[0056] In some embodiments, when multiple detectors and multiple lasers are included, the correspondence between lasers and detectors includes: one detector corresponding to one laser; one detector corresponding to multiple lasers; and one laser corresponding to multiple detectors. By configuring the correspondence between lasers and detectors, the accuracy of the detected intensity value of the reflected beam L2 can be improved.

[0057] A first cutting tool 50 (as a non-limiting example, the cutting relationship is represented by a dashed line) is disposed above the stage 10 and cuts the film located on the notch mark N. The first cutting tool 50 has multiple blades (not shown in the figure), and each blade corresponds to a notch mark N of a certain shape.

[0058] Specifically, to accommodate notch marks N of different shapes, this solution provides a first cutting tool 50 with multiple blades. This allows for the selection of a suitable blade based on the determined shape of the notch mark N, enabling the removal of the film P covering the notch mark N in one pass along its boundary. Furthermore, the blades do not need to rotate within the space of the notch mark N, thus improving cleanliness.

[0059] In some embodiments, the notch mark N is in the shape of at least one of U-shape or V-shape.

[0060] Accordingly, the notch mark N is U-shaped, and the first cutting tool 50 includes a U-shaped blade.

[0061] The notch mark N is V-shaped, and the first cutting tool 50 includes a V-shaped blade.

[0062] In short, a notch mark N corresponds to a blade of a certain shape.

[0063] It should be noted that the shapes of the notch mark N listed in the above examples are merely illustrative and are used to indicate that the notch mark N can have various shapes. This should not be interpreted as a limitation on the notch mark N. When the shape of the notch mark N changes, the cutting tool used will also change accordingly.

[0064] A processor 40, electrically connected to the laser 20, the detector 30, and the first cutting tool 50 respectively, determines the shape of the notch mark N covered by the thin film P, wherein the shape of the notch mark N is determined based on the light intensity value characterized by the detection signal.

[0065] Specifically, the processor 40 can receive detection signals from the detector 30, and by processing the detection signals, it can determine the shape of the notch mark N covered by the thin film P.

[0066] In some embodiments, the detection signal itself includes coordinate information and light intensity values ​​at different locations. When the processor 40 receives these detection signals, it can further process the detection signals based on its own configured logic to determine the shape of the notch mark N.

[0067] Specifically, for the same probe beam and the same thin film, the energy of the probe beam L1 incident on the thin film P on the crystal surface is different from that of the reflected beam L2 of the probe beam L1 incident on the thin film P on the notch mark N. In this way, the position and shape of the notch mark N can be determined based on the change in light intensity.

[0068] In some embodiments, the light intensity difference between any two locations can be calculated; if the light intensity difference is determined to be greater than a preset light intensity, it indicates that the projection of this location point is located at the notch mark N, because:

[0069] When the probe beam L1 and the thin film P are the same, the light intensity value emitted by the thin film P on the crystal surface must be greater than the light intensity value emitted by the thin film P on the notch mark N. When the light intensity difference is greater than the preset light intensity, it means that the difference between the two position points is obvious, and the projection of this position point must be located on the notch mark N.

[0070] Through multiple rounds of comparison, the positions of all projections on the notch mark N, as well as the corresponding coordinate values, can be determined. Therefore, by fitting these positions, the shape of the notch mark N can be determined.

[0071] In this way, when the shape of the tool is predetermined, the path between the gating processor 40 and the tool is selected so that the selected tool is adapted to the shape of the notch mark N.

[0072] In some embodiments, the first cutting instruction sent by the processor 40 to the tool includes a cutting path, and in response to the first cutting instruction, the tool can directly contact the film to remove the film P located at the notch mark N.

[0073] In some embodiments, the processor 40 may include, but is not limited to, hardware circuits implemented with an application-specific integrated circuit (ASIC), a programmable logic device (PLD), a microcontroller unit (MCU), a microprocessor unit (MPU), a digital signal processor (DSP), or a central processing unit (CPU). For example, the hardware circuit implemented with a PLD may include, for instance, a field-programmable gate array (FPGA).

[0074] When multiple processors are included, the types of processors can be the same or different. For example, processors can include MCUs and FPGAs. Processors can include MCUs, FPGAs, and CPUs. Processing device 206 can include MCUs, DSPs, and FPGAs. Alternatively, processors can include CPUs and FPGAs, and so on. When processing device 206 includes multiple processors, these processors can be configured separately, partially integrated, or fully integrated. For example, processors can be implemented as system-on-chip (SOC) or ASICs.

[0075] It should be noted that the processor can use general-purpose computer equipment to communicate and perform data operations with the detector and the first cutting tool. This embodiment does not involve any improvement to the specific operating method of the computing device. The data acquisition and comparison processes of the computing device can be implemented using existing or conventional techniques in the art.

[0076] In short, through the cooperation between laser 20 and detector 30, the light intensity value of the reflected beam L2 reflected from the first end face of thin film P, as well as the coordinate value of the position point, can be determined. Processor 40 can determine the shape of the notch mark N by fitting based on the light intensity value of the reflected beam L2 and the coordinate value of the position point, thereby selecting a tool from multiple tools that matches the shape of the notch mark N to perform the step of removing the thin film P covering the notch mark N.

[0077] It should be noted that, firstly, Figure 1 The schematic diagram of the stage 10 is merely an illustrative example and does not represent the actual construction. It is intended to illustrate a component for supporting the wafer W and providing a processing platform for the wafer W, and should not be construed as a limitation of this disclosure; secondly... Figure 1 The schematic diagram showing the relative arrangement of the detector 30, laser 20, and stage 10 is also for illustrative purposes, used to illustrate how the reflected beam L2 from different locations is obtained through the cooperation between the detector 30 and laser 20; third, Figure 1 The schematic structure is a simplified representation and is only used to illustrate the working mechanism of the film cutting equipment.

[0078] In some embodiments, when performing the cutting operation, it is necessary to determine the boundary and outline of the notch mark N, and therefore it is necessary to determine all the thin films P covering the notch mark N. This requires acquiring the reflected light beams at all locations within this region.

[0079] In some embodiments, the reflected beams at all locations in this region can be obtained by changing the incident point of the probe beam L1 onto the thin film P in various ways.

[0080] Example 1: The pose of the laser 20 is adjustable, while the pose of the detector 30 is fixed.

[0081] Specifically, by making the pose of the laser 20 adjustable, the emission angle of the laser 20 can be changed, thereby changing the position of the detection beam L1 incident on the first end face of the thin film P. After being reflected from different positions, the reflected beam L2 can be detected by the detector 30, thus enabling the measurement of at least all points on the first end face of the thin film P covering the notch mark N.

[0082] In Example 1, see Figure 3 The schematic diagram of a thin film cutting device in the second embodiment of this disclosure shows that, in order to ensure that the reflected light beams L2 at different positions can be received by the detector 30, the thin film cutting device may further include:

[0083] A deflection component 60 is disposed along the transmission path of the reflected beam L2 to change the transmission direction of the reflected beam L2.

[0084] In other words, when the pose of the detector 30 is fixed, by setting the deflection component 60, the reflected beam L2 can be deviated from the predetermined path, so that the detector 30 can receive the reflected beam L2.

[0085] In some embodiments, the deflection component 60 may be a rotating mirror. By changing the placement angle or deflection angle of the rotating mirror, the transmission path of the reflected beam L2 can be changed.

[0086] Where this embodiment is the same as the previous embodiment, please refer to the foregoing examples.

[0087] It should be noted that the setting position of the deflection component 60 is only for illustrative purposes. As long as the setting position of the deflection component 60 satisfies the requirement of changing the transmission path of the reflected beam L2, it is acceptable.

[0088] Example 2: The poses of the laser 20 and the detector 30 are both fixed.

[0089] In this case, see Figure 4 The schematic diagram of a thin film cutting device according to the third embodiment of this disclosure shows that, in order to obtain reflected light beams L2 at different positions, the thin film cutting device may further include:

[0090] The rotating component 70, located below the stage 10, moves the wafer W and changes the incident point of the probe beam L1 onto the thin film P. The direction of the rotation of the wafer W is perpendicular to the crystal plane of the wafer W.

[0091] In some embodiments, by providing the rotating component 70, the position of the wafer W relative to the laser 20 can be adjusted in real time to change the position of the probe beam L1 incident on the thin film P.

[0092] In other words, by rotating the wafer W, under the condition that the incident angle of the probe beam L1 is constant, it is possible to obtain the reflected beam L2 reflected from different positions on the first end face of the thin film P, so as to determine the shape of the notch mark N.

[0093] More specifically, the rotating assembly 70 may include a rotating shaft (not shown) connected to the stage 10, and a driver (not shown) connected to the rotating shaft and the processor 40.

[0094] Where this embodiment is the same as the previous embodiment, please refer to the foregoing examples.

[0095] Specifically, the driver generates a driving force, which drives the rotating shaft to rotate, thereby moving the stage 10. Since the wafer W is placed on the stage 10, the coordinates of the contact points between different positions of the first end face of the thin film P and the probe beam L1 can be changed.

[0096] In some embodiments, the driver adjusts the rotation parameters of the rotating shaft based on the drive signal received from the processor 40, so as to adjust the rotation state of the stage 10.

[0097] It should be noted that, firstly, the rotation parameters of the rotating axis may include at least one of the following: rotation method, rotation speed, and rotation angle; this disclosure does not impose any limitation on the type of rotation parameters. Secondly, when the rotating assembly includes a rotating axis and a driver, the rotating axis is located inside the machining chamber (if present), while the driver may be located outside the machining chamber. In some other embodiments, the entire rotating assembly may be located inside the machining chamber. Thirdly, Figure 4 The schematic rotating component 70 is a simplified representation used to indicate the device or apparatus that drives the stage 10 to rotate.

[0098] In some embodiments, if the instantaneous movement speed is too fast during the rotation of wafer W or other movements (e.g., the lifting and lowering of wafer W), it may cause wafer W to slip.

[0099] In this case, the stage 10 has a bearing surface with through holes (not shown) and an adsorption assembly (not shown) disposed through the through holes to adsorb the wafer during the wafer's movement.

[0100] Specifically, the top surface of the adsorption component can receive and adsorb the wafer, and the wafer W remains stable while moving along a direction perpendicular to the crystal plane of the wafer W.

[0101] In some embodiments, there are multiple through holes, and the multiple through holes are concentrically arranged along the circumference of the stage. Correspondingly, there are also multiple adsorption components, and one adsorption component corresponds to one through hole.

[0102] By having multiple through-holes and adsorption components, the adsorption components and the wafer can have multiple contact surfaces (the contact surface can be the top surface of the adsorption component) during the wafer lifting process. Thus, even when some adsorption components fail to work, the remaining adsorption components can still normally support and adsorb the wafer, improving the fault tolerance and stability of the wafer lifting process.

[0103] In some embodiments, the stage further includes a limiting member (not shown) disposed on the bearing surface to restrict relative movement between the wafer and the bearing surface.

[0104] Specifically, when a wafer is placed on a stage, it can be confined within the area enclosed by the limiting members, thereby reducing or preventing the wafer from falling off the support.

[0105] In some embodiments, when a limiting member is provided on the stage, the shape of the side of the limiting member that contacts the wafer is adapted to the shape of the wafer.

[0106] For example, the side of the limiting component that contacts the wafer can be arc-shaped, which allows the limiting component to better fit the wafer and provide more uniform contact pressure, reducing the problem of local pressure concentration.

[0107] In this embodiment, to meet diverse wafer size requirements, the limiting members can move along the surface of the stage, thereby changing the space formed between the limiting members to restrict the movement of wafers of different sizes along the surface of the support portion.

[0108] In other words, the limiting component can be moved to form a bearing space on the surface of the bearing surface that matches the size of the wafer, without the need to replace the bearing part. This improves the flexibility and versatility of the thin film cutting equipment and saves design and manufacturing costs.

[0109] Furthermore, due to the presence of the limiting components, even when the wafer is in motion, it can be confined within the space enclosed by the limiting components, thereby preventing the wafer from slipping off the stage.

[0110] In some embodiments, the above-described scheme can remove the film covering the notch mark, exposing the edge of the notch mark, which is beneficial for performing wafer alignment operations.

[0111] In actual processing, there are also cases where thin films cover the edges of the wafer. These films can reduce the wafer thinning effect and even contaminate the processing equipment, so they also need to be removed.

[0112] Therefore, the thin film cutting equipment may further include: a second cutting tool (not shown) disposed above the stage, electrically connected to the processor, for cutting the thin film covering the edge of the wafer.

[0113] The cutting path of the second cutting tool is: along the edge of the wafer, from the first edge position of the notch mark to the second edge position of the notch mark.

[0114] And see also Figure 5 The schematic diagram shown in this embodiment of the present disclosure illustrates a working scenario for film removal. During the first cutting process, the cutting positions CA1 and CA2 corresponding to the projection of the outer edge of the cut of the first cutting tool onto the film P only expose the notch mark N, while the remaining part of the film is still in a connected state, the film still has good tension, and the film coverage stability is high.

[0115] During the second dicing process, the cutting can proceed in the direction indicated by arrow D, from the first dicing point Ct1 towards the second dicing point Ct2, so that the outer edge of the cut of the second dicing tool fits the edge of the wafer W on the projection of the thin film P, thereby removing the thin film on the edge of the wafer W and retaining only the thin film located on the crystal surface. Figure 5 (Not shown).

[0116] In other words, this application first removes the thin film on the notch mark N, and then removes the thin film covering the edge of the wafer P. This reduces the risk of the thin film cracking or falling off the wafer during the film removal process.

[0117] In some embodiments, the second cutting tool may be a laser, which can remove the thin film covering the edge of the wafer by laser ablation by causing the laser emitted from the laser to follow the travel path indicated by the second cutting command.

[0118] In some embodiments, the cutting tool may refer to other types of blades that, by causing the cutting path of the blade to follow the travel path indicated by the second cutting instruction, can directly contact the film and remove the film covering the edge of the wafer.

[0119] In one specific embodiment, a blade adapted to the shape of the notch mark may be used to perform the first cutting process, and other types of blades or lasers may be used to perform the second cutting process.

[0120] It is understood that the above embodiments provide multiple implementation schemes, and these implementation schemes can be combined and cross-referenced with each other without conflict, thereby extending to multiple possible implementation schemes. These can all be considered as the implementation schemes disclosed and made public in this application.

[0121] It should be noted that the terms "example" or "implementation" used in this specification refer to a specific feature, structure, or characteristic that may be included in at least one implementation of the embodiments of this disclosure. Furthermore, in the description of this specification, terms such as "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined with terms such as "first" and "second" may explicitly or implicitly include one or more of that feature. Moreover, terms such as "first" and "second" are used to distinguish similar objects and are not necessarily used to describe a specific order or indicate importance. It is understood that such terms can be interchanged where appropriate so that the embodiments of this disclosure described herein can be implemented in orders other than those illustrated or described herein.

[0122] While the embodiments disclosed herein are as described above, this disclosure is not limited thereto. Any person skilled in the art can make various alterations and modifications without departing from the spirit and scope of this disclosure; therefore, the scope of protection of this disclosure should be determined by the scope defined in the claims.

Claims

1. A film cutting apparatus, characterized by, A film cutting device for removing a film covering a wafer having a notch mark, the film cutting device comprising: a carrier for carrying the wafer, a wafer back of the wafer being in contact with the carrier, the film covering a wafer surface of the wafer, the wafer surface being an end surface of the wafer away from the carrier; a laser arranged above the carrier for emitting a probe light beam towards a first end surface of the film, the first end surface being an end surface of the film away from the wafer; a detector arranged above the carrier for receiving a reflected light beam reflected by the first end surface of the film and generating a probe signal; a first cutting tool arranged above the carrier for cutting the film on the notch mark, the first cutting tool having a plurality of cutters, each of the cutters being independently controlled, and a cutting portion of one of the cutters having a shape corresponding to a shape of one of the notch marks; a processor electrically connected to the laser, the detector and the first cutting tool respectively, for determining the shape of the notch mark covered by the film based on an intensity value represented by the probe signal.

2. The film cutting apparatus according to claim 1, wherein The laser is adjustable in pose, and the detector is fixed in pose.

3. The film cutting apparatus according to claim 2, wherein Further comprising: a deflection component arranged along a transmission path of the reflected light beam for changing a transmission direction of the reflected light beam.

4. The film cutting apparatus of claim 1, wherein The laser and the detector are both fixed in pose. The film cutting device further comprises a rotating component arranged below the carrier for driving the wafer to move and changing a position of an incident point of the probe light beam incident to the film, wherein a direction of the rotating movement of the wafer is perpendicular to the wafer surface of the wafer.

5. The film cutting apparatus of claim 4, wherein The rotating component comprises a rotating shaft connected to the carrier, and a driver connected to the rotating shaft and the processor.

6. The film cutting apparatus of claim 4, wherein The carrier has a carrying surface, the carrying surface having a through hole, and a suction component arranged through the through hole for adsorbing the wafer during the movement of the wafer.

7. The film cutting apparatus of claim 6, wherein The carrier further has a limiting member arranged on the carrying surface for limiting relative movement between the wafer and the carrying surface.

8. The film cutting apparatus of claim 1, wherein Further comprising: a second cutting tool arranged above the carrier and electrically connected to the processor for cutting the film covering an edge of the wafer.

9. The film cutting apparatus of claim 1, wherein, One or more of the following are satisfied: The detector comprises at least one of a photoelectric detection circuit, a PIN photodiode, an avalanche photodiode, a single-photon avalanche diode, or a silicon photomultiplier. The laser comprises at least one of a vertical-cavity surface-emitting laser, an edge-emitting laser, or a distributed feedback laser.

10. The film cutting apparatus of claim 1, wherein, The cutting portion of the cutter has at least one of a U shape or a V shape.

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