Semiconductor manufacturing apparatus

Abstract

The semiconductor manufacturing apparatus includes a processing chamber and a detachable gas supply system. The processing chamber includes a lower chamber portion and a top chamber portion. The top chamber portion is separated from the lower chamber portion. The detachable gas supply system comprises a gas distribution plate and a gas source. The gas distribution plate is detachably disposed on the lower chamber portion. The gas distribution plate includes a plurality of apertures. A gas source is in fluid connection with the plurality of apertures of the gas distribution plate.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a semiconductor manufacturing apparatus. BACKGROUND

[0002] Semiconductor devices are formed on substrates using fabrication processes that include several film formation processes. A processing chamber, such as a chemical vapor deposition (CVD) chamber, is used to process wafers. During a film formation process, a substrate positioned within the CVD chamber is exposed to a reactive gas introduced into the chamber, and the substrate has a deposited film on its face. SUMMARY

[0003] In some embodiments, a semiconductor manufacturing apparatus includes a processing chamber and a detachable gas supply system. The processing chamber includes a lower chamber portion and a top chamber portion. The top chamber portion is separate from the lower chamber portion. The detachable gas supply system includes a gas distribution plate and a gas source. The gas distribution plate is detachably disposed on the lower chamber portion. The gas distribution plate includes a plurality of holes. The gas source is fluidly connected to the plurality of holes of the gas distribution plate.

[0004] In some embodiments, a semiconductor manufacturing apparatus includes a processing chamber, a detachable gas supply system, and a wafer chuck. The processing chamber includes a lower chamber portion and a top chamber portion. The top chamber portion is separate from the lower chamber portion. The detachable gas supply system includes a gas distribution plate. The gas distribution plate is detachably disposed above the lower chamber portion. The gas distribution plate includes a plurality of holes. The wafer chuck is located in the processing chamber. The plurality of holes of the gas distribution plate do not overlap the wafer chuck in a top view.

[0005] In some embodiments, a semiconductor manufacturing apparatus includes a processing chamber, a detachable gas supply system, and a detachable gas exhaust system. The processing chamber includes a lower chamber portion and a top chamber portion. The top chamber portion is separate from the lower chamber portion. The detachable gas supply system includes a gas distribution plate. The gas distribution plate is detachably disposed above the lower chamber portion. The gas distribution plate includes a plurality of holes. The detachable gas exhaust system includes a gas extractor. The gas extractor is fluidly connected to an outlet of the lower chamber portion. BRIEF DESCRIPTION OF DRAWINGS

[0006] Aspects of the present disclosure are best understood with reference to the detailed description and drawings. It should be noted that the various features are not necessarily drawn to scale. The dimensions of the various features can actually be increased or decreased as an explicit result of the drawing process.

[0007] FIG. 1A A schematic top view of a semiconductor manufacturing apparatus according to some embodiments of the present disclosure;

[0008] FIG. 1B FIG. 1 is a schematic diagram of a processing chamber of a semiconductor manufacturing apparatus, according to some embodiments of the present disclosure; FIG. 1A

[0009] FIG. 2A FIG. 2 is a schematic diagram of a detachable cleaning system applied on a lower chamber portion, according to some embodiments of the present disclosure;

[0010] FIG. 2B FIG. 3 illustrates an example gas flow simulation of a gas flow field induced by the detachable cleaning system of FIG. 2, according to some embodiments of the present disclosure; FIG. 2A

[0011] FIG. 3 FIG. 4 is a flowchart of a method for operating a semiconductor manufacturing apparatus, according to some embodiments of the present disclosure;

[0012] FIG. 4A to FIG. 4F FIG. 5 illustrates a method for operating a semiconductor manufacturing apparatus, according to some embodiments of the present disclosure; FIG. 3

[0013] FIG. 5 FIG. 6 illustrates a pulse of various processes versus time when operating a semiconductor manufacturing apparatus, according to some embodiments of the present disclosure;

[0014] FIG. 6A FIG. 7 is a top view of a gas distribution structure of a gas supply system, according to some embodiments of the present disclosure;

[0015] FIG. 6B FIG. 8 is a cross-sectional view of the gas distribution structure of FIG. 7; FIG. 6A

[0016] FIG. 9 is a cross-sectional view of a gas distribution structure of a gas supply system, according to some embodiments of the present disclosure; FIG. 7

[0017] FIG. 10 is a cross-sectional view of a gas distribution structure of a gas supply system, according to some embodiments of the present disclosure; FIG. 8

[0018] FIG. 11 is a top view of a gas distribution structure of a gas supply system, according to some embodiments of the present disclosure; FIG. 9

[0019] FIG. 12 is a top view of a gas distribution structure of a gas supply system, according to some embodiments of the present disclosure; FIG. 10

[0020] FIG. 13 illustrates a simulated cleaning performance (particle number versus time) of a gas supply system having a gas distribution structure with different hole distributions, according to some embodiments of the present disclosure; FIG. 11

[0021] FIG. 12 ​​​​Simulated cleaning performance (particle number vs. time) of a gas supply system having gas distribution structures with different hole path angles is shown in accordance with some embodiments of the present disclosure.

[0022] SYMBOL DESCRIPTION

[0023] 12: load lock chamber

[0024] 14: wafer transfer system chamber

[0025] 14R: transfer arm

[0026] 16: auxiliary chamber

[0027] 100: semiconductor manufacturing apparatus

[0028] 110: process chamber

[0029] 110A-110C: process chambers

[0030] 110I: space

[0031] 111: main body

[0032] 112: lower chamber body

[0033] 112C: channel

[0034] 112I: chamber space

[0035] 112P: pivot

[0036] 112W: insert / remove opening

[0037] 114: upper chamber body

[0038] 130: wafer chuck

[0039] 130P: plate

[0040] 140: vacuum system

[0041] 142: throttle body

[0042] 142C: cover

[0043] 142O: opening

[0044] 144: gate body

[0045] 146: pump body

[0046] 146O: outlet

[0047] 148: vacuum source

[0048] 150: gas distribution system

[0049] 200: gas supply system

[0050] 202: pipe

[0051] 202B: branch pipe

[0052] 202M: distribution pipe

[0053] 210: gas source

[0054] 220: gas distribution plate

[0055] 220O: hole

[0056] 220OL: hole

[0057] 220OM: hole

[0058] 220OR: hole

[0059] 222: lift portion

[0060] 230: pressure controller

[0061] 300: gas exhaust system

[0062] 302: pipe

[0063] 310: particle detector

[0064] 320: gas extractor

[0065] 400: controller

[0066] A1: angle

[0067] CB: bottom hole

[0068] CL: coil

[0069] CT: top hole

[0070] F1: deposited film

[0071] M: method

[0072] MS: maintenance step

[0073] PG: purge gas

[0074] RA: upper chamber portion

[0075] RB: lower chamber portion

[0076] S1-S9: steps

[0077] W: wafer

[0078] WI: dashed line

[0079] WO: dashed line DETAILED DESCRIPTION

[0080] The following disclosure provides many different embodiments, or examples, for implementing different characteristics of the provided subject matter. Specific examples of components and configurations are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, formation of a first feature on top of or over a second feature in the following description can include embodiments where the first and second features are formed in direct contact, and can also include embodiments where additional features can be formed between the first and second features such that the first and second features can not be in direct contact. Furthermore, the present disclosure can make reference to a number of units and / or parts. As used here, the term "unit" or "part" can refer to a self-contained component, which can be physically integrated or can be separate. As used herein, the term "coupled" can include electrically coupled, magnetically coupled, and / or physically coupled.

[0081] In addition, spatially relative terms, such as "beneath", "below", "lower", "above", "upper", and the like, can be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientations depicted in the figures. The devices can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly. Generally, "about", "approximately", "roughly", or "substantially" as used herein will often mean within 20% or within 10% or within 5% of a given value or range. Numerical values given herein are approximations, so that the terms "about", "approximately", "roughly", or "substantially" can be interpreted even if not explicitly stated.

[0082] FIG. 1AA schematic top view of a semiconductor manufacturing apparatus 100. In the illustrated embodiment, the semiconductor manufacturing apparatus 100 includes a cluster tool that includes load lock chambers 12, a wafer transfer system chamber 14, a plurality of processing chambers 110A-110C, an auxiliary chamber 16. In some other embodiments, the cluster tool can also include other chambers, such as a waiting chamber between the wafer transfer system chamber 14 and the load lock chambers 12. Two load lock chambers 12 can be configured for respectively transferring wafers W into and out of the cluster tool. In various embodiments, the cluster tool (including the wafer transfer system chamber 14 and the processing chambers 110A-110C) is under vacuum, and the load lock chambers 12 can "pump" incoming wafers into the cluster tool (e.g., by means of a vacuum system). In some embodiments, the load lock chambers 12 can be adapted to receive and release a single wafer or multiple wafers (e.g., loaded into a cassette). By way of example, the load lock chambers 12 can be separated from the wafer transfer system chamber 14 by means of a gate valve, allowing the wafer transfer system chamber 14 to remain under vacuum while one or both of the load lock chambers 12 are being evacuated.

[0083] The wafer transfer system chamber 14 can also be referred to as a buffer chamber. In various embodiments, the wafer transfer system chamber 14 is equipped with a transfer arm 14R (e.g., a mechanical transfer arm). The transfer arm 14R can have blades for holding wafers. The transfer arm 14R can be automatically smoothly moved along any of horizontal and / or vertical axes in order to transfer wafers / substrates W between any of the load lock chambers 12 and the wafer transfer system chamber 14.

[0084] The processing chambers 110A-110C can be used to perform a plurality of substrate processing operations, such as atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), etching, film coating, pre-treatment / pre-soaking, outgassing, and annealing, and / or other suitable processes or operations in a front-end-of-line (FEOL) or back-end-of-line (BEOL) process. For example, one or more of the processing chambers 110A-110C can be used to deposit various dielectric layers, coat anti-reflective layers, thermally pre-treat wafers, and / or other suitable processes or operations. In various embodiments, the cluster tool can have more or fewer processing chambers, e.g., for desired processes to be performed by the cluster tool.

[0085] The auxiliary chamber 16 can temporarily hold wafers before, during, or after processing in the processing chambers 110A-C. In some embodiments, the auxiliary chamber 16 can be equipped with a cooling system for cooling the wafers W, and the auxiliary chamber 16 can be referred to as a cooling chamber.

[0086] In a semiconductor manufacturing process by the semiconductor manufacturing apparatus 100, a wafer can be transferred from one of the load lock chambers 12 to the processing chamber 110A (e.g., via the wafer transfer system chamber 14) to undergo a first process. In some embodiments, the cluster tool can further include an orienter chamber, and a wafer moved from the one of the load lock chambers 12 can first be oriented in the orienter chamber (not shown) before entering the processing chamber 110. In some embodiments, the wafer can be transferred from the processing chamber 110A to the processing chamber 110B (e.g., via the wafer transfer system chamber 14) to undergo a second process, and / or the wafer can then be transferred from the processing chamber 110B to the processing chamber 110C (e.g., via the wafer transfer system chamber 14) to undergo a third process. In some embodiments, after the first, second, and / or third processes, the wafer can then be transferred from the processing chambers 110A-C to the auxiliary chamber 16 (e.g., via the wafer transfer system chamber 14) for cooling. The wafer processed via the first, second, and / or third processes can be transferred to another one of the load lock chambers 12 to exit the cluster tool. In this case, the processing chambers 110A-C can be referred to as processing chambers 110.

[0087] FIG. 1B FIG. 1 is a schematic diagram of a semiconductor manufacturing apparatus 100 according to some embodiments of the present disclosure. The semiconductor manufacturing apparatus 100 can include a plurality of load lock chambers 12, a plurality of processing chambers 110, a plurality of wafer transfer system chambers 14, and an auxiliary chamber 16. The semiconductor manufacturing apparatus 100 can be a cluster tool. In some embodiments, the semiconductor manufacturing apparatus 100 can be a HDP-CVD cluster tool. FIG. 1A FIG. 2 is a schematic diagram of a processing chamber 110 of the semiconductor manufacturing apparatus 100 of FIG. 1. In some embodiments of the present disclosure, the processing chamber 110 can operate in low, medium, and high power HDP / CVD processes. High power processes can use power higher than about 15 kW, for example, from 15 kW to 18 kW. Medium power processes can use power ranging from about 8 to 12 kW. Low power processes can use power below about 8 kW. In some embodiments, the coils described herein below can be used to provide high power processes by the voltage applied to the coils. FIG. 1B FIG. 3 schematically illustrates a structure of an exemplary HDP-CVD system in some embodiments.

[0088] The processing chamber 110 includes a body 111 including a lower chamber body 112 and an upper chamber body 114, a wafer chuck 130, a vacuum system 140, and a gas distribution system 150. In this case, the lower chamber body 112, the wafer chuck 130, and the vacuum system 140 can be collectively referred to as a lower chamber portion RB. And the upper chamber body 114, the gas distribution system 150, and a plasma generation system mounted on the upper chamber body 114 can be collectively referred to as an upper chamber portion RA.

[0089] The main body 111 of the processing chamber 110 includes a lower chamber body 112, and an upper chamber body 114 can enclose a space 1101 for semiconductor processing. The upper chamber body 114 can be pivotally coupled with a pivot 112P of the lower chamber body 112. The pivot 112P can extend along a direction Y, such that the upper chamber body 114 can be rotated in a plane of directions X and Z about the direction Y. The directions X, Y, and Z can be orthogonal to each other. By rotating the upper chamber body 114 about the pivot 112P of the lower chamber body 112, the processing chamber 110 can be opened or closed. In other words, the upper chamber body 114 can have opposite first and second ends, the first end of the upper chamber body 114 is pivotally coupled with the pivot 112P, and the second end of the upper chamber body 114 can be moved to contact or not contact the lower chamber body 112. When the processing chamber 110 is closed, the second end of the upper chamber body 114 is moved to contact the lower chamber body 112. At this time, the lower chamber body 112 and the upper chamber body 114 together enclose a space for HDP / CVD processing. When the processing chamber 110 is opened (in an open state), the second end of the upper chamber body 114 is moved to be spaced apart from the lower chamber body 112. At this time, a chamber space 1121 enclosed by the lower chamber body 112 is exposed.

[0090] A wafer is transferred into and out of the processing chamber 110 by a mechanical blade (e.g., a robot arm 140R) via an insertion / removal opening 112W of the lower chamber body 112, and a wafer chuck 130 holding the wafer is installed in the lower chamber body 112. The wafer chuck 130 can be moved along the direction X, and is inserted into the lower chamber body 112 via a passage 112C of the lower chamber body 112. The wafer chuck 130 can be an electrostatic chuck that fastens a wafer during substrate processing. In some embodiments, the wafer chuck 130 has a negative electrode therein to provide a substrate bias to the wafer during HDP / CVD processing. The wafer chuck 130 can be physically connected with a plate 130P that can cover the passage 112C of the lower chamber body 112 when the wafer chuck 130 is inserted into the lower chamber body 112.

[0091] A vacuum system 140 can be fluidly connected with the lower chamber body 112, thereby allowing the chamber space 112I enclosed by the lower chamber body 112 and the upper chamber body 114 to remain at a vacuum when the processing chamber 110 is closed. The vacuum system 140 can include a throttle body 142, a gate body 144, a pump body 146, and a vacuum source 148. The throttle body 142 can house a throttle valve, such as a double blade throttle valve. The throttle valve can adjust the amount of exhaust gas flow therethrough. The throttle body 142 can have an opening 142O and a cover 142C covering the opening 142O, wherein a throttle valve is disposed in the throttle body 142 via the opening 142O. The gate body 144 can house a gate valve that controls whether exhaust gas flow passes through itself. The pump body 146 can house a turbo molecular pump. When the gate valve of the gate body 144 is open (in an open state), the turbo molecular pump of the pump body 146 is fluidly connected with the throttle body 142. When the gate valve of the gate body 144 is closed, the gate valve of the gate body 144 can isolate the turbo molecular pump of the pump body 146 from the throttle body 142. When the throttle valve of the throttle body 142 is fully open, the gate valve of the gate body 144 can control the chamber pressure by restricting the exhaust flow capacity. The vacuum source 148 can be fluidly coupled with an outlet 146O of the pump body 146 to exhaust gas (e.g., reaction gas) during a semiconductor process. In some embodiments, the vacuum source 148 can be detached from the outlet 146O of the pump body 146 for maintenance purposes.

[0092] A gas distribution system 150 can be fluidly connected with the upper chamber body 114 to introduce reaction gas into the space enclosed by the lower chamber body 112 and the upper chamber body 114. For example, the gas distribution system 150 can be fluidly connected with one or more nozzles in the upper chamber body 114. In some embodiments, the upper chamber body 114 can have a plasma generation system (e.g., a coil later in FIG. 4A to FIG. 4E

[0093] FIG. 2A A schematic diagram of a detachable cleaning system applied on a lower chamber portion RB according to some embodiments of the present disclosure. The detachable cleaning system can include a detachable gas supply system 200, a detachable gas exhaust system 300, and a controller 400.

[0094] ​The gas supply system 200 may include a conduit 202, a gas source 210, a gas distribution plate 220, and a pressure controller 230. In some embodiments, the gas supply system 200 may be referred to as a gas purification system or a gas flushing system. The gas distribution plate 220 is disposed on the lower chamber body 112. The gas distribution plate 220 may be made of a suitable rigid material, such as aluminum. The gas source 210 stores a suitable purification gas, such as Ar, nitrogen, other clean dry air (CDA), similar, or combinations thereof. The gas distribution plate 220 has a plurality of holes 220O, thereby allowing the purification gas to enter the space surrounded by the lower chamber body 112. The conduit 202 is fluidly coupled between the gas source 210 and the holes 220O of the gas distribution plate 220, thereby introducing the purification gas through the holes 220O into the chamber space 112I surrounded by the lower chamber body 112 (see FIG. 1B For example, pipe 202 has a distribution pipe 202M and multiple branch pipes 202B branching from the distribution pipe 202M. The distribution pipe 202M has a terminal coupled to a pressure controller 230 for gas adaptation. The branch pipes 202B have terminals respectively coupled to orifices 220O. The pressure controller 230 is fluidly coupled between the gas source 210 and pipe 202 to adjust the gas force of the purified gas. In some embodiments, the gas distribution plate 220 may also be referred to as a gas distribution structure.

[0095] The detachable gas exhaust system 300 can include a pipe 302, a particle detector 310, and a gas extractor 320. In some embodiments, the gas extractor 320 can be a pump, such as a vacuum pump. During maintenance processes, the vacuum source 148 is detached from the outlet 1460 of the pump body 146, and the pipe 302 fluidly connects the gas extractor 320 to the outlet 1460 of the pump body 146. In some embodiments, the outlet 1460 of the pump body 146 can be considered as an outlet of the lower chamber portion RB. The particle detector 310 is fluidly coupled with the pipe 302 between the gas extractor 320 and the outlet 1460 of the pump body 146. The particle detector 310 counts the number of particles per liter of gas flow. The purge gas provided by the gas supply system 200 is delivered through the throttle body 142, the gate body 144, and the pump body 146 to the particle detector 310 and then through the gas extractor 320, which provides a suction force to suck / extract the gas from the pump body. Via the configuration, the internal volume of the lower chamber portion RB (e.g., the internal volume of the lower chamber body 112, the throttle body 142, the gate body 144, and the pump body 146) is flushed by the purge gas. Via the configuration, the components in the chamber space 1121 (e.g., the wafer chuck 130), the components in the throttle body 142 (e.g., the throttle valve), the components in the gate body 144 (e.g., the gate valve), and the components in the pump body 146 (e.g., the turbomolecular pump) are flushed by the purge gas.

[0096] The controller 400 is communicatively coupled to the detachable gas supply system 200 and the detachable gas exhaust system 300, and the controller 400 is capable of controlling the operation of the detachable gas supply system 200. For example, the controller 400 is communicatively coupled to the particle detector 310 and the pressure controller 230. Via configuration, the controller 400 can receive data of the particle count from the particle detector 310, and control the pressure controller 230 to adjust the gas force of the purge gas according to the data. The controller 400 can include a computer-readable storage medium and a processor coupled to the computer-readable storage medium. The computer-readable storage medium is to store data and processing instructions, and the processor is to retrieve and execute the processing instructions stored in the computer-readable storage medium. In some embodiments, the computer-readable storage medium can be a computer-readable medium, such as a random access memory (RAM), a read only memory (ROM), a floppy disk, a hard disk, a flash memory, or any other suitable form of digital storage. In some embodiments, the processor can be a general purpose processor, a multi-core processor, a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic, discrete hardware components, or any combination designed to perform the functions described herein. The general purpose processor can be a microprocessor, but in the alternative, the processor can be any processor, controller, microcontroller, or state machine. The processor can also be implemented as a combination of computing devices, such as a combination of a DSP and a microprocessor, a plurality of microprocessors, one or more microprocessors in conjunction with a DSP core, or any other such configuration.

[0097] FIG. 2B An example gas flow simulation of a gas flow field induced by the detachable cleaning system of FIG. 2A Using the detachable cleaning system, the purge gas PG is introduced into the lower chamber body 112, the throttle body 142, the gate body 144, and the pump body 146 of the lower chamber portion RB. The path of the purge gas PG is illustrated as a gas flow field. The purge gas PG can exit the pump body 146 via the outlet 146O of the pump body 146.

[0098] FIG. 3 A flowchart of a method for operating a semiconductor manufacturing apparatus according to some embodiments of the present disclosure. FIG. 4A to FIG. 4F An example gas flow simulation of a gas flow field induced by the detachable cleaning system of FIG. 3for operating a semiconductor manufacturing apparatus. The method M includes steps S1-S9. It is to be understood that for additional embodiments of the method, additional steps can be provided before, during, and after steps S1-S9 illustrated in FIG. 3 , and some of the steps described below can be replaced or eliminated. The order of operations / processes can be interchangeable. Steps S3-S8 can be collectively referred to as maintenance steps MS.

[0099] The method M begins at step S1, where one or more deposition processes are performed in the processing chamber 110. The deposition processes can be high plasma deposition processes. Prior to the deposition processes, referring to FIG. 3 and FIG. 4A , the wafer W is moved into the processing chamber 110, e.g., to be placed on the wafer chuck 130. After moving the wafer W into the processing chamber 110, e.g., placing the wafer W on the wafer chuck 130, referring to FIG. 3 and FIG. 4B , at step S1, the gas distribution system 150 can introduce a reactant gas into the space 110I enclosed by the lower chamber body 112 and the upper chamber body 114. And, the coil CL in the upper chamber body 114 can be applied with RF power, thereby converting the reactant gas into a plasma PM for depositing a film (e.g., a SiO2 film) Fl on the wafer W. After depositing the film Fl on the wafer W, referring to FIG. 3 and FIG. 4C , the wafer W is moved away from the processing chamber 110, e.g., moving the wafer away from the wafer chuck 130. After repeating the steps of FIG. 4A to FIG. 4C for performing deposition processes on various wafers, e.g., as pulses of the deposition processes in FIG. 3 , the method M proceeds to the maintenance steps MS.

[0100] Referring to FIG. 3 and FIG. 4D . The method M proceeds to step S2 of the maintenance steps MS, where the processing chamber 110 is opened by separating the upper chamber portion RA (see FIG. 4C ) from the lower chamber portion RB. For example, the interior volume of the lower chamber body 112 is exposed.

[0101] Referring to FIG. 3 and FIG. 4E . The method M proceeds to step S3 of the maintenance steps MS, where the gas supply system 200 is fluidly connected to the lower chamber body 112 of the lower chamber portion RB, and the gas exhaust system 300 is fluidly connected to the pump body 146 below the lower chamber body 112 of the lower chamber portion RB.

[0102] Method M proceeds to step S4 of maintenance step MS, in which gas supply system 200 is used to introduce purge gas PG into lower chamber portion RB. Purge gas PG can flush chamber space 1121 encompassed by lower chamber body 112, throttle body 142, gate body 144, and pump body 146. Gas exhaust system 300 is used to draw purge gas PG and particles away from chamber space 1121 encompassed by lower chamber body 112, throttle body 142, gate body 144, and pump body 146.

[0103] Method M proceeds to step S5, in which particle counts are detected via particle detector 310 of gas exhaust system 300 as purge gas PG is introduced into chamber space 1121 by gas supply system 200 and purge gas PG is drawn by gas exhaust system 300.

[0104] Method M proceeds to step S6, in which a determination is made as to whether the detected particle counts are acceptable. The determination step can include comparing the detected particle counts to a threshold particle count. In some embodiments, the threshold particle count can be in a range from about 0 to about 100. When the detected particle counts are greater than the threshold particle count, the detected particle counts are determined to be unacceptable, and method proceeds to step S7, in which the gas force of the purge gas is adjusted according to the detected particle counts. For example, when the detected particle counts are in a first range, pressure controller 230 can tune the gas force of purge gas PG to be introduced to be a first gas force. And, when the detected particle counts are in a second range greater than the first range, pressure controller 230 can tune the gas force of purge gas PG to be introduced to be a second gas force greater than the first gas force. Thus, purge gas PG can be introduced at an appropriate gas force according to the contamination condition of chamber space 1121, throttle body 142, gate body 144, and pump body 146.

[0105] Steps S6 and S7 can be repeated until the detected particle counts are acceptable. When the detected particle counts are less than the particle counts, the detected particle counts are determined to be acceptable, and the maintenance / cleaning process is ended / stopped / terminated. For example, the action of flushing the interior volume of lower chamber portion RB (e.g., the interior volume of lower chamber body 112, throttle body 142, gate body 144, and pump body 146) is terminated. After the maintenance / cleaning process is ended / stopped / terminated, referring to FIG. 4F , method M proceeds to step S8, in which gas supply system 200 is disconnected from lower chamber body 112, and gas exhaust system 300 is disconnected from pump body 146.

[0106] Referring to FIG. 3 and back to FIG. 4AMethod M proceeds to step S9, where the processing chamber 110 is closed by moving the upper chamber portion RA back over the lower chamber portion RB. Method M can then return to step SI, such that one or more deposition processes are performed in the processing chamber 110.

[0107] FIG. 5 Pulses of various processes in operating a semiconductor manufacturing apparatus are illustrated in accordance with some embodiments of the present disclosure. In FIG. 5 , dashed lines WI and WO are used to indicate timing of wafer transfers. Dashed line WI indicates timing when a wafer is moved onto a wafer chuck 130 (see FIG. 4A ). And, dashed line WO indicates timing when a wafer is moved away from the wafer chuck 130 (see FIG. 4C ). As FIG. 5 illustrated, a wafer is transferred into and out of a processing chamber 110 for deposition of a film (e.g., step SI in FIG. 3 ). After several deposition processes are performed on the wafer in the processing chamber 110, the processing chamber 110 is opened (e.g., step S2 in FIG. 3 ) and a maintenance process is performed (e.g., maintenance step MS in FIG. 3 ). After the maintenance process (e.g., maintenance step MS in FIG. 3 ), the processing chamber 110 is closed (e.g., step S9 in FIG. 3 ).

[0108] FIG. 6A is a top view of a gas distribution plate 220 of a gas supply system in accordance with some embodiments of the present disclosure. FIG. 6B is a cross-sectional view of the gas distribution plate 220 of FIG. 6A . The gas distribution plate 220 can include a plurality of holes 2200 extending from a top surface of the gas distribution plate 220 to a bottom surface of the gas distribution plate 220. The holes 2200 allow purge gas to pass through the gas distribution plate 220 and into a chamber space enclosed by a lower chamber portion. In embodiments of the present disclosure, the holes 2200 can not overlap with the wafer chuck 130 in a top view. For example, the holes 2200 can be separated / isolated from the wafer chuck 130 in a top view. Via configuration, purge gas introduced via the gas distribution plate 220 can not be blocked by the wafer chuck 130, thereby facilitating cleaning efficiency.

[0109] In embodiments of the present disclosure, the holes 220O can be designed with suitable angles to inject the purge gas into the space surrounded by the lower chamber portion. For example, the gas distribution plate 220 has a plurality of raised portions 222 raised from a top surface of the plate body of the gas distribution plate 220, and each of the holes 220O has a top hole CT in the raised portion 222 and a bottom hole CB in the plate body of the gas distribution plate 220. The bottom hole CB is in fluid communication with the top hole CT. In some embodiments, the top hole CT can extend in the raised portion 222 in a direction Z perpendicular to a bottom surface (e.g., a plane of directions X and Y) of the gas distribution plate 220. In some embodiments, the directions X, Y and Z are substantially orthogonal to each other. In some embodiments, the bottom hole CB can extend in the plate body of the gas distribution plate 220 in a direction having an inclination angle Al with respect to the bottom surface (e.g., a plane of directions X and Y) of the gas distribution plate 220. The angle Al can be in a range from about 20 degrees to about 90 degrees. For example, in embodiments of the present disclosure, the angle Al is in a range from about 40 degrees to about 50 degrees.

[0110] In embodiments of the present disclosure, the bottom holes CB of the holes 220O can extend in various directions respectively to provide suitable gas flow fields. For clarity, in FIG. 6A , the holes 220O in the left row in the direction Y are referred to as holes 220OL, the holes 220O in the right row in the direction Y are referred to as holes 220OR. And, the holes 220O between the holes 220OL and the holes 220OR are referred to as holes 220OM. In embodiments of the present disclosure, the extending directions of the bottom holes CB of the holes 220OR, the extending directions of the bottom holes CB of the holes 220OL and the extending directions of the bottom holes CB of the holes 220OM are different from each other. For example, the bottom holes CB of the holes 220OL are inclined toward a direction opposite to the direction X, the bottom holes CB of the holes 220OR are inclined toward the direction X, and the bottom holes CB of the holes 220OM are inclined toward the direction Y. In some embodiments, the extending direction of the bottom holes CB of the holes 220OL is at a plane of directions X and Z, and has an inclination angle Al with respect to the bottom surface (e.g., a plane of directions X and Y) of the gas distribution plate 220. In some embodiments, the extending direction of the bottom holes CB of the holes 220OR is at a plane of directions X and Z, and has an inclination angle Al with respect to the bottom surface (e.g., a plane of directions X and Y) of the gas distribution plate 220. In some embodiments, the extending direction of the bottom holes CB of the holes 220OM is at a plane of directions Y and Z, and has an inclination angle Al with respect to the bottom surface (e.g., a plane of directions X and Y) of the gas distribution plate 220.

[0111] FIG. 7 A cross-sectional view of a gas distribution plate 220 of a gas supply system according to some embodiments of the present disclosure. The details of embodiments of the present disclosure are similar to those described above.FIG. 6B The details of the embodiments are similar, except that angle A1 is in the range of about 80 degrees to about 90 degrees. For example, the extension direction of the bottom hole CB of holes 220OL, 220OR, and 220OM is substantially perpendicular to the bottom surface of the gas distribution plate 220 (e.g., the plane of directions X and Y). Other details of the embodiments disclosed herein are similar. FIG. 6A The details of the embodiments are not repeated herein.

[0112] FIG. 8 This is a cross-sectional view of a gas distribution plate 220 of a gas supply system according to some embodiments of this disclosure. The details of the embodiments disclosed are similar to... FIG. 6B The details of the embodiments are similar, except that angle A1 is in the range of about 20 degrees to about 40 degrees. Other details of the embodiments disclosed herein are similar. FIG. 6A The details of the embodiments are not repeated herein.

[0113] FIG. 9 This is a top view of a gas distribution plate 220 of a gas supply system according to some embodiments of this disclosure. The details of the embodiments disclosed are similar to... FIG. 6A The details of the embodiments, except that some of the holes 220O of the gas distribution plate 220 may overlap perpendicularly with the wafer chuck 130, are as follows: In the embodiments disclosed herein, the holes 220O of the gas distribution plate 220 may be configured in an array. For example, the holes 220O of the gas distribution plate 220 are configured in 3 rows and 3 columns. Holes 220O in the same column are aligned with each other along direction X, and holes 220O in the same row are aligned with each other along direction Y. In some embodiments, the holes 220O are symmetrical about a center point. Other details of the embodiments disclosed herein are similar. FIG. 6A The details of the embodiments are not repeated herein.

[0114] FIG. 10 This is a top view of a gas distribution plate 220 of a gas supply system according to some embodiments of this disclosure. The details of the embodiments disclosed are similar to... FIG. 9 The details of the embodiments are similar, except that every two adjacent holes of hole 220O may be misaligned along direction X, and every two adjacent holes of hole 220O may be misaligned along direction Y. Other details of the disclosed embodiments are similar. FIG. 9 The details of the embodiments are not repeated herein.

[0115] FIG. 11Simulated cleaning performance (particle number vs. time) of a gas supply system having gas distribution structures with different hole distributions according to some embodiments of the present disclosure is illustrated. The horizontal axis is time after the gas supply system is fluidly connected to the lower chamber portion RB, and the vertical axis is the number of particles detected by the particle sensor. The curve "Type 1" indicates the cleaning performance using a gas distribution plate 220 having a distribution of holes 2200 as illustrated in FIG. 6A The curve "Type 2" indicates the cleaning performance using a gas distribution plate 220 having a distribution of holes 2200 as illustrated in FIG. 9 The curve "Type 3" indicates the cleaning performance using a gas distribution plate 220 having a distribution of holes 2200 as illustrated in FIG. 10 The curve "Type 3" indicates the cleaning performance using a gas distribution plate 220 having a distribution of holes 2200 as illustrated in From the curves "Type 1", "Type 2", and "Type 3", it is apparent that the number of particles can be reduced by using the gas supply system.

[0116] FIG. 12 Simulated cleaning performance (particle number vs. time) of a gas supply system having gas distribution structures with different hole path angles according to some embodiments of the present disclosure is illustrated. The horizontal axis is time after the gas supply system is fluidly connected to the lower chamber portion RB, and the vertical axis is the number of particles detected by the particle sensor. The curve "a1" indicates the cleaning performance using a gas distribution plate 220 having holes 2200 with an angle A1 ranging from about 80 degrees to about 90 degrees as illustrated in FIG. 7 The curve "a2" indicates the cleaning performance using a gas distribution plate 220 having holes 2200 with an angle A1 ranging from about 20 degrees to about 40 degrees as illustrated in FIG. 8 The curve "a2" indicates the cleaning performance using a gas distribution plate 220 having holes 2200 with an angle A1 ranging from about 20 degrees to about 40 degrees as illustrated in FIG. 6B The curve "a2" indicates the cleaning performance using a gas distribution plate 220 having holes 2200 with an angle A1 ranging from about 20 degrees to about 40 degrees as illustrated in From the curves "a1", "a2", and "a3", it is apparent that the number of particles can be reduced by using the gas supply system.

[0117] Based on the foregoing discussion, it can be seen that the present disclosure gives advantages. However, it should be understood that other embodiments can give additional advantages, and not all advantages are necessarily required to practice the embodiments, and no particular advantage is required for all embodiments. One advantage is that particles in the lower chamber portion (e.g., in the lower chamber body, the throttle body, the gate body, and the pump body) can be effectively removed by connecting the gas supply system to the lower chamber body and connecting the gas exhaust system to the outlet of the pump body. Another advantage is that the cleaning performance can be improved by adjusting the angle and hole distribution of the gas distribution plate.

[0118] According to some embodiments of the disclosure, a method for operating a semiconductor manufacturing apparatus is provided. The method includes performing a deposition process on a wafer in a processing chamber; opening the processing chamber; and performing a maintenance process while the processing chamber is in an open state. The maintenance process includes placing a gas distribution plate over a lower chamber portion of the processing chamber, wherein the gas distribution plate includes a plurality of holes, while the processing chamber is in the open state; and providing a purge gas to a space enclosed by the lower chamber portion through the plurality of holes of the gas distribution plate.

[0119] In some implementations, the method further includes moving the wafer away from the processing chamber after the deposition process and before the step of opening the processing chamber. In some implementations, the method further includes closing the processing chamber after the maintenance process. In some implementations, the deposition process includes introducing a reactant gas into the processing chamber; converting the reactant gas into a plasma. In some implementations, the maintenance process further includes fluidly connecting a gas extractor to an outlet of the lower chamber portion; extracting the purge gas from the space enclosed by the lower chamber portion through the outlet. In some implementations, the maintenance process includes fluidly connecting a particle detector between the gas extractor and the outlet of the lower chamber portion; using the particle detector to detect a particle count in the extracted purge gas. In some implementations, the maintenance process includes adjusting a gas force of the purge gas according to the detected particle count. In some implementations, the step of placing the gas distribution plate over the lower chamber portion of the processing chamber is performed such that the plurality of holes of the gas distribution plate do not overlap with a wafer chuck in the processing chamber in a top view. In some implementations, the step of providing the purge gas is performed such that the purge gas is provided through a first hole of the plurality of holes extending in a first direction and through a second hole of the plurality of holes extending in a second direction different from the first direction.

[0120] According to some embodiments of the disclosure, a method for operating a semiconductor manufacturing apparatus is provided. The method includes performing a plasma process in a processing chamber; opening the processing chamber; and performing a maintenance process while the processing chamber is in an open state. The maintenance process includes purging an internal volume of the processing chamber with a purge gas; extracting the purge gas; detecting a particle count in the extracted purge gas; and adjusting a gas force of the purge gas according to the detected particle count.

[0121] In some embodiments, the method further includes determining whether the detected particle count is acceptable, wherein adjusting the gas force of the purge gas is performed in response to a determination that the detected particle count is not acceptable. In some embodiments, the method further includes terminating purging the interior volume of the processing chamber with the purge gas in response to a determination that the detected particle count is acceptable. In some embodiments, purging the interior volume of the processing chamber with the purge gas includes positioning a gas distribution plate above the processing chamber, wherein the gas distribution plate includes a plurality of holes. In some embodiments, adjusting the gas force of the purge gas includes tuning the gas force of the purge gas to a first gas force when the detected particle count is in a first range, and tuning the gas force of the purge gas to a second gas force greater than the first gas force when the detected particle count is in a second range greater than the first range.

[0122] According to some embodiments of the present disclosure, a semiconductor manufacturing apparatus includes a processing chamber and a detachable gas supply system. The processing chamber includes a lower chamber portion and a top chamber portion. The top chamber portion is separate from the lower chamber portion. The detachable gas supply system includes a gas distribution plate and a gas source. The gas distribution plate is detachably positioned above the lower chamber portion. The gas distribution plate includes a plurality of holes. The gas source is fluidly connected to the plurality of holes of the gas distribution plate.

[0123] In some embodiments, a first hole of the plurality of holes extends along a first direction, and a second hole of the plurality of holes extends along a second direction different from the first direction. In some embodiments, a third hole of the plurality of holes extends along a third direction different from the first direction and the second direction. In some embodiments, a hole of the plurality of holes extends along a direction, and an angle between the direction and a bottom surface of the gas distribution plate is in a range from 40 degrees to 50 degrees. In some embodiments, the semiconductor manufacturing apparatus further includes a wafer chuck in the processing chamber, wherein the plurality of holes of the gas distribution plate do not overlap with the wafer chuck in a top view. In some embodiments, the semiconductor manufacturing apparatus further includes a detachable gas exhaust system. The detachable gas exhaust system includes a gas extractor and a particle detector. The gas extractor is fluidly connected to an outlet of the lower chamber portion. The particle detector is fluidly connected between the gas extractor and the outlet of the lower chamber portion.

[0124] In some embodiments, a semiconductor manufacturing apparatus includes a processing chamber, a detachable gas supply system, and a wafer chuck. The processing chamber includes a lower chamber portion and a top chamber portion. The top chamber portion is separate from the lower chamber portion. The detachable gas supply system includes a gas distribution plate. The gas distribution plate is detachably disposed on the lower chamber portion. The gas distribution plate includes a plurality of holes. The wafer chuck is located in the processing chamber. The plurality of holes of the gas distribution plate do not overlap the wafer chuck in a top view. In some embodiments, the detachable gas supply system further includes a gas source. The gas source is fluidly connected to the plurality of holes of the gas distribution plate. In some embodiments, a first hole of the plurality of holes extends along a first direction, a second hole of the plurality of holes extends along a second direction different from the first direction, and a third hole of the plurality of holes extends along a third direction different from the first direction and the second direction.

[0125] In some embodiments, a semiconductor manufacturing apparatus includes a processing chamber, a detachable gas supply system, and a detachable gas exhaust system. The processing chamber includes a lower chamber portion and a top chamber portion. The top chamber portion is separate from the lower chamber portion. The detachable gas supply system includes a gas distribution plate. The gas distribution plate is detachably disposed on the lower chamber portion. The gas distribution plate includes a plurality of holes. The detachable gas exhaust system includes a gas extractor. The gas extractor is fluidly connected to an outlet of the lower chamber portion. In some embodiments, the detachable gas exhaust system further includes a particle detector. The particle detector is fluidly connected between the gas extractor and the outlet of the lower chamber portion. In some embodiments, the detachable gas supply system further includes a gas source. The gas source is fluidly connected to the plurality of holes of the gas distribution plate.

[0126] The foregoing outlines features of several embodiments so that a thorough comprehension of the present disclosure can be attained. Those skilled in the art should appreciate that they can readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and / or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they can make various changes, substitutions and alterations herein without departing from the spirit and scope of the present disclosure.

Claims

1. A semiconductor manufacturing apparatus characterized by comprising: A processing chamber comprising: a lower chamber portion and a top chamber portion, wherein the top chamber portion is separated from the lower chamber portion; and a detachable gas supply system comprising: a gas distribution plate detachably disposed above the lower chamber portion, wherein the gas distribution plate comprises a plurality of holes; and a gas source fluidly connected to the plurality of holes of the gas distribution plate.

2. The semiconductor manufacturing apparatus according to claim 1, wherein wherein a first hole of the plurality of holes extends along a first direction, and a second hole of the plurality of holes extends along a second direction different from the first direction.

3. The semiconductor manufacturing apparatus according to Claim 1, wherein wherein a third hole of the plurality of holes extends along a third direction different from the first direction and the second direction.

4. The semiconductor manufacturing apparatus according to Claim 1, wherein wherein a hole of the plurality of holes extends along a direction, and an angle between the direction and a bottom surface of the gas distribution plate is in a range from 40 degrees to 50 degrees.

5. A semiconductor manufacturing apparatus characterized by comprising: A processing chamber comprising: a lower chamber portion and a top chamber portion, wherein the top chamber portion is separated from the lower chamber portion; a detachable gas supply system comprising a gas distribution plate detachably disposed above the lower chamber portion, wherein the gas distribution plate comprises a plurality of holes; and a wafer chuck located in the processing chamber, wherein the plurality of holes of the gas distribution plate do not overlap with the wafer chuck in a top view.

6. The semiconductor manufacturing apparatus according to claim 5, wherein The detachable gas supply system further comprises a gas source fluidly connected to the plurality of holes of the gas distribution plate.

7. The semiconductor manufacturing apparatus according to Claim 5, wherein wherein a first hole of the plurality of holes extends along a first direction, a second hole of the plurality of holes extends along a second direction different from the first direction, and a third hole of the plurality of holes extends along a third direction different from the first direction and the second direction.

8. A semiconductor manufacturing apparatus characterized by comprising: A processing chamber comprising: a lower chamber portion and a top chamber portion, wherein the top chamber portion is separated from the lower chamber portion; a detachable gas supply system comprising a gas distribution plate detachably disposed above the lower chamber portion, wherein the gas distribution plate comprises a plurality of holes; and a detachable gas exhaust system comprising a gas extractor fluidly connected to an outlet of the lower chamber portion.

9. The semiconductor manufacturing apparatus according to Claim 8, wherein The detachable gas exhaust system further comprises a particle detector fluidly connected between the gas extractor and the outlet of the lower chamber portion.

10. The semiconductor manufacturing apparatus according to Claim 8, wherein The detachable gas supply system further comprises a gas source fluidly connected to the plurality of holes of the gas distribution plate.

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