Semiconductor rapid annealing furnace structure

Abstract

The utility model discloses a semiconductor rapid annealing furnace structure, which relates to the technical field of annealing furnace structures, and comprises an annealing furnace mechanism, the annealing furnace mechanism comprises a furnace body, a furnace door is arranged on the side surface of the furnace body, a placing rack is fixedly connected in the furnace body, and a heating assembly is arranged on the surface of the inner wall of the furnace body. A vacuum pump is arranged on the side face of the annealing furnace mechanism. According to the utility model, when the vacuum pump generates suction force at the end part of the first connecting pipe to empty air in the furnace body, the filter element can filter the air pumped out by the first connecting pipe at the moment, so that impurities in the air are prevented from blocking a subsequent running pipeline, equipment can be effectively protected, and pipeline blockage and equipment abrasion are prevented; precise parts are maintained, process quality is improved, vacuum degree is guaranteed, and impurity pollution is prevented.

Description

Technical Field

[0001] This utility model relates to the technical field of annealing furnace structure, and in particular to a semiconductor rapid annealing furnace structure. Background Technology

[0002] In the process of manufacturing integrated circuits, wafers need to be manufactured. After the growth of single-crystal silicon wafers, rapid annealing furnaces can be used to eliminate the stress generated inside the wafers during the growth process, improve crystal defects, and enhance the crystal quality of the wafers, providing a better foundation for subsequent photolithography, etching and other processes.

[0003] However, in the existing technology, the vacuum system pipes of semiconductor rapid annealing furnaces are blocked due to the condensation, deposition or reaction of volatiles or evaporated metal atoms generated by the insulation and sealing materials and heating elements inside the furnace at high temperatures. In addition, wear particles generated by friction of moving parts such as vacuum pumps, as well as solid particles generated by the chemical reaction between the wafer and the furnace atmosphere during the annealing process, accumulate in the pipes with the airflow, causing more and more impurities to accumulate in the pipes, which in turn affects the normal operation of the system. Utility Model Content

[0004] The purpose of this invention is to solve the problem in the prior art where impurities accumulate in the vacuum system pipes of semiconductor rapid annealing furnaces, thus affecting the normal operation of the system, and to propose a semiconductor rapid annealing furnace structure.

[0005] To achieve the above objectives, the present invention adopts the following technical solution: a semiconductor rapid annealing furnace structure, including an annealing furnace mechanism, the annealing furnace mechanism including a furnace body, a furnace door installed on the side of the furnace body, a placement rack fixedly connected inside the furnace body, and a heating component installed on the inner wall surface of the furnace body, a vacuum pump provided on the side of the annealing furnace mechanism, and a filter mechanism fixedly connected to the upper part of the annealing furnace mechanism, the filter mechanism including a filter box, a box cover installed on the upper part of the filter box, a first connecting pipe fixedly connected to the upper part of the box cover, the first connecting pipe fixedly connected to the upper part of the furnace body, a filter element fixedly connected inside the filter box, and a second connecting pipe fixedly connected to the bottom of the filter box, the second connecting pipe fixedly connected to the vacuum pump.

[0006] Preferably, a temperature sensor is installed inside the furnace body.

[0007] Preferably, the filter box is provided with two filter elements, which are evenly distributed inside the filter box.

[0008] Preferably, the upper part of the filter element is provided with a cleaning mechanism, the cleaning mechanism includes a slide rail, a slider is slidably connected inside the slide rail, a brush plate is fixedly connected to the bottom of the slider, and the brush plate is in contact with the surface of the filter element.

[0009] Preferably, a servo motor is fixedly connected to the outside of the filter box, and a lead screw is fixedly connected to the output end of the servo motor.

[0010] Preferably, the lead screw is rotatably connected to the slide rail, and the lead screw is threadedly connected to the slider.

[0011] Compared with the prior art, the advantages and positive effects of this utility model are as follows:

[0012] 1. In this utility model, when the vacuum pump generates suction at the end of the No. 1 connecting pipe to vent the air inside the furnace, the filter element will filter the air drawn out by the No. 1 connecting pipe to prevent impurities in the air from clogging the subsequent operating pipes. This can effectively protect the equipment, prevent pipe blockage and equipment wear, maintain precision components, improve process quality, ensure vacuum level and prevent impurity contamination.

[0013] 2. In this utility model, a servo motor drives a lead screw to rotate, which in turn drives a slider to slide along a slide rail, thereby driving a brush plate to clean the surface of the filter element. The servo motor can precisely control the angle and speed of the lead screw rotation, ensuring that the brush plate can evenly and comprehensively contact the surface of the filter element, effectively removing various impurities and greatly improving the cleaning effect. Timely cleaning of the filter element can prevent impurities from accumulating and causing filter element blockage, extend the service life of the filter element, reduce equipment failures caused by filter element problems, and ensure the efficient and stable operation of the entire system. Attached Figure Description

[0014] Figure 1 This utility model provides a three-dimensional structural diagram of a semiconductor rapid annealing furnace.

[0015] Figure 2 This utility model provides a side view of the structure of a semiconductor rapid annealing furnace.

[0016] Figure 3 This utility model provides a schematic diagram of the internal three-dimensional structure of the furnace body in a semiconductor rapid annealing furnace structure;

[0017] Figure 4 This invention provides a three-dimensional cross-sectional structural diagram of the filter box in a semiconductor rapid annealing furnace.

[0018] Legend: 1. Annealing furnace mechanism; 11. Furnace body; 12. Furnace door; 13. Placement rack; 14. Heating component; 15. Temperature sensor; 2. Filtration mechanism; 21. Filter box; 22. Box cover; 23. No. 1 connecting pipe; 24. No. 2 connecting pipe; 25. Filter element; 26. Slide rail; 27. Slider; 28. Brush plate; 29. ​​Servo motor; 210. Lead screw; 3. Vacuum pump. Detailed Implementation

[0019] To better understand the above-mentioned objectives, features, and advantages of this utility model, the present utility model will be further described below with reference to the accompanying drawings and embodiments. It should be noted that, unless otherwise specified, the embodiments and features described in these embodiments can be combined with each other.

[0020] Many specific details are set forth in the following description in order to provide a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Therefore, the present invention is not limited to the specific embodiments disclosed in the following specification.

[0021] Example 1: As Figures 1-4 As shown, this utility model provides a semiconductor rapid annealing furnace structure, including an annealing furnace mechanism 1. The annealing furnace mechanism 1 includes a furnace body 11, a furnace door 12 installed on the side of the furnace body 11, and a placement rack 13 fixedly connected inside the furnace body 11. A heating component 14 is installed on the inner wall surface of the furnace body 11. A vacuum pump 3 is provided on the side of the annealing furnace mechanism 1, and a filter mechanism 2 is fixedly connected to the upper part of the annealing furnace mechanism 1. The filter mechanism 2 includes a filter box 21, a box cover 22 installed on the upper part of the filter box 21, a first connecting pipe 23 fixedly connected to the upper part of the box cover 22, the first connecting pipe 23 being fixedly connected to the upper part of the furnace body 11, a filter element 25 fixedly connected inside the filter box 21, and a second connecting pipe 24 fixedly connected to the bottom of the filter box 21, the second connecting pipe 24 being fixedly connected to the vacuum pump 3. A temperature sensor 15 is installed inside the furnace body 11.

[0022] The specific settings and functions of this embodiment are described below. The monocrystalline silicon wafer to be annealed is placed on the upper part of the placement rack 13, the furnace door 12 is closed to seal the furnace body 11, the heating component 14 heats the inside of the furnace body 11, and the temperature is monitored by the temperature sensor 15 to ensure the accuracy of the annealing temperature of the monocrystalline silicon wafer. Before the monocrystalline silicon wafer is annealed, the air inside the furnace body 11 is extracted by the vacuum pump 3 and the filter mechanism 2 to make the inside of the furnace body 11 a vacuum state.

[0023] When the vacuum pump 3 generates suction at the end of the first connecting pipe 23 to vent the air inside the furnace body 11, the filter element 25 will filter the air drawn out by the first connecting pipe 23 to prevent impurities in the air from clogging the subsequent operating pipes.

[0024] Example 2: Figures 1-4As shown, the filter box 21 is equipped with two filter elements 25, which are evenly distributed inside the filter box 21. A cleaning mechanism is provided on the upper part of the filter elements 25. The cleaning mechanism includes a slide rail 26, and a slider 27 is slidably connected inside the slide rail 26. A brush plate 28 is fixedly connected to the bottom of the slider 27. The brush plate 28 is in contact with the surface of the filter element 25. A servo motor 29 is fixedly connected to the outside of the filter box 21. A lead screw 210 is fixedly connected to the output end of the servo motor 29. The lead screw 210 is rotatably connected to the slide rail 26 and threadedly connected to the slider 27.

[0025] The overall effect of this embodiment is that the servo motor 29 drives the lead screw 210 to rotate, thereby driving the slider 27 to slide along the slide rail 26, which in turn drives the brush plate 28 to clean the surface of the filter element 25. Timely cleaning of the filter element 25 can prevent impurities from accumulating and causing blockage, extend the service life of the filter element 25, reduce equipment failures caused by problems with the filter element 25, and ensure the efficient and stable operation of the entire system.

[0026] The method of use and working principle of this device: Place the monocrystalline silicon wafer that needs to be annealed on the upper part of the placement rack 13, close the furnace door 12 to seal the furnace body 11, heat the inside of the furnace body 11 through the heating component 14, and monitor the temperature through the temperature sensor 15 to ensure the accuracy of the annealing temperature of the monocrystalline silicon wafer. Before annealing the monocrystalline silicon wafer, the air inside the furnace body 11 is extracted through the vacuum pump 3 and the filter mechanism 2 to make the inside of the furnace body 11 a vacuum state.

[0027] When the vacuum pump 3 generates suction at the end of the first connecting pipe 23 to vent the air inside the furnace body 11, the filter element 25 will filter the air drawn out by the first connecting pipe 23 to prevent impurities in the air from clogging the subsequent operating pipes.

[0028] The above are merely preferred embodiments of this utility model and are not intended to limit the utility model in any other way. Any person skilled in the art may make changes or modifications to the above-disclosed technical content to create equivalent embodiments for application in other fields. However, any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of this utility model without departing from the technical solution of this utility model shall still fall within the protection scope of this utility model.

Claims

1. A semiconductor rapid annealing furnace structure, comprising an annealing furnace mechanism (1), wherein the annealing furnace mechanism (1) includes a furnace body (11), a furnace door (12) is installed on the side of the furnace body (11), and a placement rack (13) is fixedly connected inside the furnace body (11), and a heating assembly (14) is installed on the inner wall surface of the furnace body (11), characterized in that: The annealing furnace mechanism (1) side is provided with vacuum pump (3), and annealing furnace mechanism (1) upper portion fixedly connected with filter mechanism (2), the filter mechanism (2) includes filter box (21), the filter box (21) upper portion is installed with lid (22), the lid (22) upper portion is fixedly connected with a connecting pipe (23), the connecting pipe (23) is fixedly connected with furnace body (11) upper portion, the filter box (21) inside is fixedly connected with filter filter core (25), and filter box (21) bottom is fixedly connected with the connecting pipe (24), the connecting pipe (24) is fixedly connected with vacuum pump (3).

2. The structure of a semiconductor rapid thermal annealing furnace according to claim 1, wherein: The furnace body (11) is internally provided with a temperature sensor (15).

3. The structure of a semiconductor rapid thermal annealing furnace according to claim 1, wherein: The filter box (21) is internally provided with two filter filter cores (25), and the two filter filter cores (25) are uniformly distributed in the filter box (21).

4. The structure of a semiconductor rapid thermal annealing furnace according to claim 1, wherein: The filter filter core (25) is provided with a cleaning mechanism, and the cleaning mechanism comprises a sliding rail (26), a sliding block (27) is slidably connected in the sliding rail (26), a brush plate (28) is fixedly connected to the bottom of the sliding block (27), and the brush plate (28) is attached to the surface of the filter filter core (25).

5. The structure of a semiconductor rapid thermal annealing furnace according to claim 1, wherein: The filter box (21) is externally fixedly connected with a servo motor (29), and the output end of the servo motor (29) is fixedly connected with a lead screw (210).

6. A semiconductor rapid thermal processing furnace structure as claimed in claim 5, wherein: The lead screw (210) is rotatably connected with the sliding rail (26), and the lead screw (210) is threadedly connected with the sliding block (27).

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