Chemical vapor deposition device
By employing an annular exhaust port and flow-limiting ring design in the MOCVD equipment, the problem of deposit re-rolling caused by eddies was solved, thus improving the film quality.
Patent Information
- Application Number
- CN202520086318.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-14
- Publication Date
- 2026-01-09
- Estimated Expiration
- 2035-01-14
AI Technical Summary
In existing MOCVD equipment, the exhaust port design causes eddy currents to form, and the deposits are rolled back onto the wafer, affecting the film quality.
The exhaust port is designed as a continuous annular opening, and a flow-limiting ring is installed in the exhaust channel or exhaust chamber to reduce the lateral flow velocity component, form a uniform flow field, and reduce the formation of eddies.
It effectively reduces the probability of deposits rolling back onto the wafer surface and improves film quality.
Smart Images
Figure CN223780351U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor equipment, and in particular to a chemical vapor deposition apparatus. Background Technology
[0002] Metal-organic chemical vapor deposition (MOCVD) technology is widely used in optoelectronic devices, semiconductor lasers, high-frequency electronic devices and other fields. This technology involves transporting a gas containing a metal-organic compound to a reaction chamber, where it decomposes at high temperature and deposits on a wafer to form a thin film.
[0003] like Figure 1 As shown, existing MOCVD equipment typically employs a side-venting ring with the vent opening facing a non-vertical direction to prevent particulate or flaky deposits from falling vertically and clogging the vent during the process. Simultaneously, a deposit storage area isolated from the venting ring is provided within the venting region, allowing particulate or flaky deposits to be effectively collected in a first storage area 182. However, because a dead zone is formed in the first storage area 182, eddies are generated in this dead zone during the process. These eddies cause some deposits to move upwards along the return path 144 and fall onto the wafer, forming contaminants and affecting film quality. Utility Model Content
[0004] The purpose of this invention is to provide a chemical vapor deposition apparatus to reduce the probability of deposits in the storage area being rolled back onto the wafer, thereby improving the film quality.
[0005] To achieve the above objectives, this utility model provides a chemical vapor deposition (CVD) apparatus. The CVD apparatus includes a reaction chamber, which includes a chamber wall. A base and an exhaust ring are provided within the reaction chamber. The exhaust ring is located below the base and includes a top cover, an exhaust channel, an exhaust chamber, and an extraction port. The top cover is located above the exhaust channel. The exhaust channel has an exhaust port on its windward sidewall with an opening facing a non-vertical direction. The exhaust port is a continuous annular opening. The exhaust chamber is located below the exhaust channel. Waste gas generated during the process exits the reaction chamber sequentially through the exhaust port, the exhaust channel, the exhaust chamber, and the extraction port. The exhaust ring also includes a flow-limiting ring disposed in the exhaust channel or the exhaust chamber, with a waste gas channel formed on the flow-limiting ring. A storage area for storing deposits generated during the process is formed between the windward sidewall of the exhaust channel and the chamber wall.
[0006] Optionally, the exhaust port is formed between the lower surface of the top cover and the top of the windward sidewall of the exhaust channel.
[0007] Optionally, the cross-sectional area of the exhaust chamber is larger than the cross-sectional area of the exhaust passage.
[0008] Optionally, the total cross-sectional area of the exhaust gas passages is less than the total cross-sectional area of the exhaust ports.
[0009] Optionally, the exhaust gas passage is a plurality of through holes distributed circumferentially, or an annular passage.
[0010] Optionally, at least one of the aperture and density of the through-hole increases in a direction away from the air extraction port, or at least a portion of the radial width of the annular channel increases in a direction away from the air extraction port.
[0011] Optionally, the flow-limiting ring is disposed in the exhaust channel, and the flow-limiting ring is closer to the exhaust chamber than the exhaust port.
[0012] Optionally, the flow-limiting ring is disposed in the exhaust chamber, and the air intake port is located outside the flow-limiting ring.
[0013] This invention also provides another chemical vapor deposition (CVD) apparatus, comprising a reaction chamber with a chamber wall; a base and an exhaust ring are provided within the reaction chamber, the exhaust ring being located below the base, the exhaust ring comprising a top cover, an extension, a U-shaped inner wall, a U-shaped outer wall, an exhaust channel, an exhaust chamber, and an extraction port; the top cover and the extension are disposed opposite each other on the top of the U-shaped outer wall and extend towards the U-shaped inner wall; two exhaust channels and an exhaust chamber are formed between the U-shaped inner wall and the U-shaped outer wall, each of the two exhaust channels having a non-vertical exhaust port, the exhaust port being a continuous annular opening, the waste gas generated during the process sequentially exiting the reaction chamber through the exhaust port, the exhaust channel, the exhaust chamber, and the extraction port; the exhaust ring further comprises two flow-limiting rings disposed in the two exhaust channels or the exhaust chamber, the flow-limiting rings having waste gas channels; the groove formed by the U-shaped inner wall serves as a storage area for the deposits generated during the process.
[0014] Optionally, the lower surfaces of the top cover and the extension respectively form the exhaust ports with the two tops of the U-shaped inner sidewall.
[0015] Optionally, the total cross-sectional area of the exhaust gas passages on the two flow-limiting rings is less than the total cross-sectional area of the two exhaust ports.
[0016] Optionally, the exhaust gas passage is a plurality of through holes distributed circumferentially; or it is an annular passage.
[0017] Optionally, the diameter or shape of the through holes on the two flow-limiting rings may be different; or the radial width of the annular channels on the two flow-limiting rings may be different.
[0018] Optionally, at least one of the aperture and density of the through-hole increases in a direction away from the air extraction port, or at least a portion of the radial width of the annular channel increases in a direction away from the air extraction port.
[0019] Optionally, the flow-limiting ring is disposed in the exhaust channel, and the flow-limiting ring is closer to the exhaust chamber than the exhaust port.
[0020] Optionally, the flow-limiting ring is disposed in the exhaust chamber, and the air intake is located between the two fourth flow-limiting rings.
[0021] Compared with the prior art, the beneficial effects of this utility model include at least the following:
[0022] This invention provides a chemical vapor deposition (CVD) apparatus with a continuous annular exhaust port. Compared to the multiple circumferentially distributed exhaust ports in existing technologies, the annular exhaust port has a larger total area, significantly reducing the lateral flow velocity component of the exhaust gas near the exhaust port. This greatly reduces the probability of eddies forming in the storage area that could roll back deposits from the storage area to the wafer surface. Furthermore, a flow-limiting ring is installed within the exhaust channel or chamber to ensure that the exhaust velocities in different areas of the reaction chamber are more similar, which is beneficial for creating a more uniform flow field within the reaction chamber. Attached Figure Description
[0023] To more clearly illustrate the technical solution of this utility model, the accompanying drawings used in the description will be briefly introduced below. Obviously, the drawings in the following description are one embodiment of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort:
[0024] Figure 1 This is a schematic diagram of a chemical vapor deposition apparatus in the prior art.
[0025] Figure 2(a) is a schematic diagram of the chemical vapor deposition apparatus in Example 1;
[0026] Figure 2(b) is a schematic diagram of the exhaust ring structure in the dashed box of Figure 2(a);
[0027] Figure 3(a) is a schematic diagram of the chemical vapor deposition apparatus in Example 2;
[0028] Figure 3(b) is a schematic diagram of the exhaust ring structure in the dashed box in Figure 3(a);
[0029] Figure 4(a) is a schematic diagram of the chemical vapor deposition apparatus in Example 3;
[0030] Figure 4(b) is a schematic diagram of the exhaust ring in the dashed box in Figure 4(a).
[0031] 100-Reaction chamber; 120-Base; 122-Wafer; 124-Rotating shaft; 126-Heater; 128-Base sidewall; 140-Spray head; 142-Exhaust path; 144-Return path; 160-Inner liner; 162-Drive mechanism; 164-Bottom end face; 180-First top cover; 181-First exhaust channel; 182-First storage area; 183-Evacuation device; 20-Exhaust ring; 280-Second top cover; 281-The... Second exhaust passage; 282-Second storage area; 284-Second flow-limiting ring; 285-Second exhaust chamber; 30-Exhaust ring; 380-Third top cover; 381-Third exhaust passage; 384-Third flow-limiting ring; 385-Third exhaust chamber; 40-Exhaust ring; 480-Fourth top cover; 481-Fourth exhaust passage; 482-Fourth storage area; 484-Fourth flow-limiting ring; 485-Fourth exhaust chamber; 486-Extension; 487-U-shaped inner wall. Detailed Implementation
[0032] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.
[0033] It should be understood that, when used in this specification and the appended claims, the term "comprising" indicates the presence of the described features, integrals, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or a collection thereof.
[0034] It should also be understood that the terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the scope of the application. As used in this specification and the appended claims, the singular forms “a,” “an,” and “the” are intended to include the plural forms unless the context clearly indicates otherwise.
[0035] It should also be further understood that the term “and / or” as used in this application specification and the appended claims means any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.
[0036] Furthermore, in the description of this application, the terms "first," "second," "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.
[0037] In this invention, the cross-sectional area of the exhaust opening refers to the cross-sectional area of the opening on a plane perpendicular to the opening direction (normal direction). In this invention, the windward sidewall of the exhaust channel is the portion of the sidewall that the exhaust gas flow first contacts when passing through the exhaust channel.
[0038] like Figure 1 As shown, a conventional chemical vapor deposition (CVD) apparatus includes a reaction chamber 100, within which a base 120 is disposed. At least one wafer 122 to be processed is placed on the base 120, which can rotate under the drive of a rotation shaft 124 during the process. A heater 126 is also disposed below the base 120 to heat the wafer 122 to the process temperature. The reaction chamber 100 also includes a spray head 140 disposed opposite to the base 120, for at least supplying process gas into the reaction chamber 100 during the process. Below the base 120, a base sidewall 128 is also provided, surrounding the rotation shaft 124 and the heater 126, to prevent corrosion of the heater 126 by the process gas and to shield external contaminants and the heat generated by the heater 126. The reaction chamber 100 also includes a liner 160 disposed around the spray head 140 and the base 120, which can move vertically under the drive of a drive mechanism 162. During the process, the liner 160 is positioned at a higher level, with its bottom surface 164 lower than the plane containing the wafer 122. This provides a uniform process environment for the wafer 122 and prevents the wafer inlet / outlet (not shown) from affecting the flow and temperature fields within the reaction chamber. When the wafer 122 needs to be loaded or removed, the liner 160 is positioned at a lower level to avoid obstructing the wafer inlet / outlet.
[0039] The chemical vapor deposition apparatus also includes an exhaust ring located below the base 120. The exhaust ring includes a first top cover 180 and a first exhaust channel 181, with the first top cover 180 positioned above the first exhaust channel 181. The inner side of the first top cover 180 can be fixedly connected to the side wall 128 of the base, and the outer side wall of the first top cover 180 is an outwardly convex arc shape used to guide the waste gas generated in the process. The waste gas in the process includes some process gases that have not yet participated in the reaction, as well as byproducts generated in the process. There are multiple circumferentially distributed, horizontally oriented openings between the lower surface of the first top cover 180 and the windward side wall of the first exhaust channel 181, serving as exhaust ports, allowing the process gas to flow along... Figure 1 The exhaust path 142 shown enters the first exhaust channel 181 and is drawn out of the reaction chamber 100 by the extraction device 183. A first storage area 182 is provided between the windward side wall of the first exhaust channel 181 and the chamber wall to store the deposits generated during the process that have not been drawn out of the reaction chamber 100. This can prevent large deposits from entering the first exhaust channel 181 or blocking the exhaust port.
[0040] However, due to the formation of a dead zone in the first storage area 182, eddies will form in this dead zone during the process. These eddies will cause some deposits to move upward along the backflow path 144 and fall onto the wafer, forming contaminants and affecting the film quality. In particular, when a large amount of deposits are stored in the first storage area 182, the probability of the deposits being rolled back onto the wafer and forming contaminants increases.
[0041] The chemical vapor deposition apparatus provided by this invention will now be described in conjunction with the accompanying drawings.
[0042] like Figures 2(a) to 4(b) As shown, the exhaust ring in the chemical vapor deposition apparatus provided by this utility model includes a top cover, an exhaust channel, an exhaust chamber, and a flow-limiting ring. Figure 2(a) , 3(a) As shown in 4(a), the portion above the dashed line l in the exhaust ring is defined as the exhaust channel, and the portion below the dashed line l is defined as the exhaust chamber, which is located below the exhaust channel. Because the storage area compresses the cross-sectional area of the exhaust channel, if... Figure 1 As shown in the diagram, keeping the cross-sectional area of the exhaust channel of the exhaust ring constant results in a large overall flow resistance of the exhaust ring, affecting exhaust efficiency. In this invention, the cross-sectional area of the exhaust chamber is set to be larger than the cross-sectional area of the exhaust channel, thereby reducing the overall flow resistance of the exhaust ring and improving exhaust efficiency while setting up the storage area.
[0043] In this invention, the exhaust port formed by the lower surface of the top cover and the top of the windward sidewall of the exhaust channel is a continuous annular opening. Compared with the multiple perforated exhaust ports distributed circumferentially in the prior art, the total area of the annular opening is larger, and the lateral flow velocity component of the exhaust gas near the exhaust port will be significantly reduced compared with the prior art. This will greatly reduce the probability of forming eddies in the storage area that would roll back the deposits in the storage area to the wafer surface.
[0044] Example 1
[0045] As shown in Figures 2(a) and (b), the exhaust ring 20 includes a second top cover 280, a second exhaust channel 281, and a second exhaust chamber 285. A second storage area 282 is provided between the windward side wall of the second exhaust channel 281 and the chamber wall for storing deposits generated during the process that have not been removed from the reaction chamber 100. The inner side of the second top cover 280 can be fixedly connected to the base side wall 128, and the outer side wall of the first top cover 180 is an outwardly convex arc shape.
[0046] An exhaust port is provided on the second exhaust channel 281. In this embodiment, the exhaust port is formed by the lower surface of the second top cover 280 and the top of the windward sidewall of the second exhaust channel 281, and the exhaust port is a continuous annular opening, which is used to reduce the lateral flow velocity component of the exhaust gas near the exhaust port, thereby reducing the probability of vortex formation near the second storage area 282. The opening direction of the annular opening is not vertical, which can effectively prevent particulate or flaky deposits formed during the process from falling directly into and blocking the exhaust port in the vertical direction. It is worth mentioning that the exhaust port on the second exhaust channel 281 should be understood to include the scheme in which the exhaust port is formed by the lower surface of the second top cover 280 and the top of the windward sidewall of the second exhaust channel 281.
[0047] The second exhaust passage 281 is connected to the second exhaust chamber 285, and the cross-sectional area of the second exhaust chamber 285 is larger than that of the second exhaust passage 281. This reduces the overall flow resistance of the exhaust ring 20 and improves exhaust efficiency, given the presence of the second storage area 282. The bottom of the second exhaust chamber 285 has an air extraction port; for example, two air extraction ports can be provided. The air extraction device 183 extracts exhaust gas through these ports.
[0048] A second flow-limiting ring 284 is also provided within the second exhaust channel 281 to control the exhaust flow resistance in different regions of the reaction chamber 100. The second flow-limiting ring 284 has an exhaust gas passage for waste gas flow. In one embodiment, the second flow-limiting ring 284 has a plurality of circumferentially distributed through holes. Optionally, the total cross-sectional area of the plurality of through holes is less than the cross-sectional area of the exhaust port. Optionally, the pore size and / or density of the through holes in different regions are different. Optionally, at least one of the pore size and density of at least some of the through holes increases in the direction away from the extraction port; for example, the pore size and / or density of the through holes near the extraction port is smaller than the pore size of other through holes. Because the suction force provided by the extraction device 183 is greater in the region near the extraction port than in other regions, setting the pore size and / or density of the through holes near the extraction port to be smaller than the pore size and / or density of the through holes in other regions can make the exhaust velocities in different regions of the reaction chamber 100 more similar, which is beneficial for forming a more uniform flow field within the reaction chamber 100.
[0049] In another embodiment, an annular channel is formed on the second flow-limiting ring 284. Optionally, the cross-sectional area of the annular channel is smaller than the cross-sectional area of the exhaust port. Optionally, the radial width of the annular channel varies in different regions. Optionally, the radial width of at least some of the annular channels increases in the direction away from the exhaust port; for example, the radial width of the annular channel near the exhaust port is smaller than the radial width of other regions, so as to form a more uniform flow field within the reaction chamber 100.
[0050] In one embodiment, the distance between the second flow-limiting ring 284 and the top of the windward sidewall of the second exhaust channel 281 is greater than the distance between the second flow-limiting ring 284 and the bottom of the windward sidewall of the second exhaust channel 281, that is, the second flow-limiting ring 284 is closer to the second exhaust chamber 285 relative to the exhaust port. Even if a reverse airflow is formed in the second exhaust channel 281, the deposits are difficult to leave the second exhaust channel 281, thereby improving the film quality.
[0051] Example 2
[0052] As shown in Figures 3(a) and (b), the exhaust ring 30 includes a third top cover 380, a third exhaust channel 381, and a third exhaust chamber 385. The third exhaust channel 381 communicates with the third exhaust chamber 385, and the cross-sectional area of the third exhaust chamber 385 is larger than that of the third exhaust channel 381. An air extraction port is provided at the bottom of the third exhaust chamber 385; for example, two air extraction ports can be provided. The air extraction device 183 extracts exhaust gas through these ports.
[0053] The difference between Embodiment 2 and Embodiment 1 is that the third flow-limiting ring 384 is disposed in the third exhaust chamber 385, rather than in the third exhaust channel 381. Furthermore, in this embodiment, the extraction port is disposed outside the third flow-limiting ring 384. Thus, when a reverse airflow is formed in the third channel 381, compared to Embodiment 1, the deposits in this embodiment will have more difficulty leaving the third exhaust channel 381, thereby improving the film quality.
[0054] The third flow-limiting ring 384 has an exhaust gas passage for the flow of exhaust gas. In one embodiment, the third flow-limiting ring 384 has a plurality of circumferentially distributed through holes. Optionally, the total cross-sectional area of the plurality of through holes is less than the cross-sectional area of the exhaust port. Optionally, the pore size and / or density of the through holes in different regions are different. Optionally, at least some of the pore size and density of the through holes increase in the direction away from the exhaust port; for example, the pore size and / or density of the through holes near the exhaust port is less than the pore size and / or density of the through holes in other regions, thereby facilitating the formation of a more uniform flow field within the reaction chamber 100.
[0055] In another embodiment, an annular channel is formed on the third flow-limiting ring 384. Optionally, the cross-sectional area of the annular channel is smaller than the cross-sectional area of the exhaust port. Optionally, the radial width of the annular channel varies in different regions. Optionally, the radial width of at least some of the annular channels increases in the direction away from the exhaust port; for example, the radial width of the annular channel near the exhaust port is smaller than the radial width of other regions, so as to form a more uniform flow field within the reaction chamber 100.
[0056] Example 3
[0057] As shown in Figures 4(a) and (b), the exhaust ring 40 includes a fourth top cover 480, an extension 486, a U-shaped inner sidewall 487, and a U-shaped outer sidewall. The fourth top cover 480 and the extension 486 are disposed opposite each other on the top of the U-shaped outer sidewall and extend toward the U-shaped inner sidewall 487. Two fourth exhaust channels 481 and a fourth exhaust chamber 485 are formed between the U-shaped inner sidewall 487 and the U-shaped outer sidewall of the exhaust ring 40. Each of the two fourth exhaust channels 481 is provided with an exhaust port. In this embodiment, the lower surfaces of the fourth top cover 480 and the extension 486 respectively form exhaust ports with the two tops of the U-shaped inner sidewall 487, and the two opposite exhaust ports are both continuous annular openings. Exhaust gas enters the fourth exhaust channel 481 through the two exhaust ports and then enters the fourth exhaust chamber 485. An air extraction port is provided at the bottom of the fourth exhaust chamber 485, for example, two air extraction ports can be provided, and the air extraction device 183 extracts the exhaust gas through the air extraction ports. The groove formed by the U-shaped inner sidewall 487 serves as the fourth storage area 482, used to store deposits generated during the process that have not been removed from the reaction chamber 100. It is worth noting that the two fourth exhaust channels 481 each have an exhaust port, which should be understood as the lower surfaces of the fourth top cover 480 and the extension 486 forming exhaust ports with the two tops of the U-shaped inner sidewall 487.
[0058] In this embodiment, two exhaust ports with annular openings are provided, which can further increase the total area of the exhaust ports and reduce the lateral flow velocity component of the exhaust gas near the exhaust ports, thereby reducing the probability of vortex formation near the fourth storage area 482. The openings of the annular openings are all non-vertical, which can effectively prevent particulate or flaky deposits formed during the process from falling directly into and blocking the exhaust ports in the vertical direction.
[0059] Each of the two fourth exhaust channels 481 is equipped with a fourth flow-limiting ring 484 to control the exhaust flow resistance in different areas within the reaction chamber 100. Both fourth flow-limiting rings 484 have exhaust gas channels for waste gas flow. In one embodiment, both fourth flow-limiting rings 484 have multiple circumferentially distributed through holes. It is worth noting that the diameter or shape of the through holes on the two fourth flow-limiting rings 484 can be the same or different, depending on whether they meet the exhaust requirements of different chemical vapor deposition devices or different processes. Optionally, the sum of the cross-sectional areas of the through holes on the two fourth flow-limiting rings 484 is less than the sum of the cross-sectional areas of the two exhaust ports.
[0060] Optionally, the pore size and / or density of the through holes in different regions of the same fourth flow-limiting ring 484 may be different. Optionally, at least some of the pore size and density of the through holes may increase in the direction away from the exhaust port. For example, the pore size and / or density of the through holes near the exhaust port may be smaller than the pore size and / or density of the through holes in other regions, thereby facilitating the formation of a more uniform flow field within the reaction chamber 100.
[0061] In another embodiment, an annular channel is formed on the fourth flow-limiting ring 484, in which case the U-shaped inner sidewall 487 can be supported by the bottom of the fourth exhaust chamber 485. It is worth noting that the radial widths of the annular channels on the two fourth flow-limiting rings 484 can be the same or different, depending on the exhaust requirements of different chemical vapor deposition devices or different processes. Optionally, the sum of the cross-sectional areas of the annular channels on the two fourth flow-limiting rings 484 is less than the sum of the cross-sectional areas of the two exhaust ports. Optionally, the radial widths of the annular channels in different regions of the fourth flow-limiting ring 484 are different. Optionally, the radial width of at least some of the annular channels increases in the direction away from the exhaust port; for example, the radial width of the annular channel near the exhaust port is smaller than the radial width of other regions, so as to form a more uniform flow field within the reaction chamber 100.
[0062] In one embodiment, the distance between the two fourth flow-limiting rings 484 and the top of the U-shaped inner sidewall 487 is greater than the distance between them and the bottom of the U-shaped inner sidewall 487, meaning the fourth flow-limiting rings 484 are closer to the fourth exhaust chamber 485 relative to the exhaust port. This makes it more difficult for deposits to leave the fourth exhaust channel 481 even if a reverse airflow is formed within the fourth exhaust channel 481, thereby improving the film quality.
[0063] In other embodiments, the two fourth flow-limiting rings 484 may also be disposed in the fourth exhaust chamber 485, with the exhaust port located between the two fourth flow-limiting rings 484.
[0064] In summary, this invention provides a chemical vapor deposition apparatus with a continuous annular opening as its exhaust port. Compared to the multiple circumferentially distributed perforated exhaust ports in the prior art, the total area of the annular opening is larger, and the lateral flow velocity component of the exhaust gas near the exhaust port is significantly reduced. This greatly reduces the probability of forming eddies in the storage area that would roll the deposits from the storage area back onto the wafer surface. Furthermore, a flow-limiting ring is installed in the exhaust channel or exhaust chamber to ensure that the exhaust velocities in different areas of the reaction chamber are more similar, which is beneficial for forming a more uniform flow field within the reaction chamber.
[0065] The above description is merely a specific embodiment of this utility model, but the protection scope of this utility model is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this utility model, and these modifications or substitutions should all be covered within the protection scope of this utility model. Therefore, the protection scope of this utility model should be determined by the scope of the claims.
Claims
1. A chemical vapor deposition apparatus, characterized in that, The chemical vapor deposition apparatus includes a reaction chamber, and the reaction chamber includes a chamber wall; The reaction chamber is provided with a base and an exhaust ring. The exhaust ring is located below the base and includes a top cover, an exhaust channel, an exhaust chamber, and an exhaust port. The top cover is located above the exhaust channel. The exhaust channel has an exhaust port on its windward sidewall with an opening facing a non-vertical direction. The exhaust port is a continuous annular opening. The exhaust chamber is located below the exhaust channel. Waste gas generated during the process exits the reaction chamber sequentially through the exhaust port, the exhaust channel, the exhaust chamber, and the exhaust port. The exhaust ring also includes a flow-limiting ring disposed in the exhaust channel or exhaust chamber, and the flow-limiting ring has an exhaust gas channel. The air-facing sidewall of the exhaust channel and the chamber wall form a storage area for storing deposits generated during the process.
2. The chemical vapor deposition apparatus as described in claim 1, characterized in that, The exhaust port is formed between the lower surface of the top cover and the top of the windward sidewall of the exhaust channel.
3. The chemical vapor deposition apparatus as described in claim 1, characterized in that, The cross-sectional area of the exhaust chamber is larger than the cross-sectional area of the exhaust channel.
4. The chemical vapor deposition apparatus as described in claim 1, characterized in that, The total cross-sectional area of the exhaust gas passages is less than the total cross-sectional area of the exhaust outlets.
5. The chemical vapor deposition apparatus as described in claim 1, characterized in that, The exhaust gas passage is a series of through holes distributed circumferentially, or an annular passage.
6. The chemical vapor deposition apparatus as described in claim 5, characterized in that, At least a portion of the aperture and density of the through-hole increases in a direction away from the air extraction port, or at least a portion of the radial width of the annular channel increases in a direction away from the air extraction port.
7. The chemical vapor deposition apparatus according to any one of claims 1-6, characterized in that, The flow-limiting ring is disposed in the exhaust channel, and the flow-limiting ring is closer to the exhaust chamber than the exhaust port.
8. The chemical vapor deposition apparatus according to any one of claims 1-6, characterized in that, The flow-limiting ring is disposed in the exhaust chamber, and the air intake is located outside the flow-limiting ring.
9. A chemical vapor deposition apparatus, characterized in that, The chemical vapor deposition apparatus includes a reaction chamber, and the reaction chamber includes a chamber wall; The reaction chamber is equipped with a base and an exhaust ring. The exhaust ring is located below the base and includes a top cover, an extension, a U-shaped inner wall, a U-shaped outer wall, an exhaust channel, an exhaust chamber, and an extraction port. The top cover and the extension are positioned opposite each other on the top of the U-shaped outer wall and extend towards the U-shaped inner wall. Two exhaust channels and an exhaust chamber are formed between the U-shaped inner wall and the U-shaped outer wall. The two exhaust channels are respectively provided with non-vertical exhaust ports. The exhaust ports are continuous annular openings. The waste gas generated during the process exits the reaction chamber sequentially through the exhaust ports, exhaust channels, exhaust chambers, and extraction ports. The exhaust ring also includes two flow-limiting rings disposed in the two exhaust channels or exhaust chambers, and the flow-limiting rings are provided with exhaust gas channels. The groove formed by the inner wall of the U-shape serves as a storage area for sediments generated during the storage process.
10. The chemical vapor deposition apparatus as described in claim 9, characterized in that, The lower surfaces of the top cover and the extension respectively form the exhaust ports with the two tops of the U-shaped inner sidewall.
11. The chemical vapor deposition apparatus as described in claim 9, characterized in that, The total cross-sectional area of the exhaust gas passages on the two flow-limiting rings is less than the total cross-sectional area of the two exhaust ports.
12. The chemical vapor deposition apparatus as described in claim 9, characterized in that, The exhaust gas passage is a plurality of through holes distributed circumferentially; or it is an annular passage.
13. The chemical vapor deposition apparatus as described in claim 12, characterized in that, The diameter or shape of the through holes on the two flow-limiting rings are different; or the radial width of the annular channels on the two flow-limiting rings is different.
14. The chemical vapor deposition apparatus as described in claim 12, characterized in that, At least a portion of the aperture and density of the through-hole increases in a direction away from the air extraction port, or at least a portion of the radial width of the annular channel increases in a direction away from the air extraction port.
15. The chemical vapor deposition apparatus according to any one of claims 9-14, characterized in that, The flow-limiting ring is disposed in the exhaust channel, and the flow-limiting ring is closer to the exhaust chamber than the exhaust port.
16. The chemical vapor deposition apparatus according to any one of claims 9-14, characterized in that, The flow-limiting ring is disposed in the exhaust chamber, and the air intake is located between the two fourth flow-limiting rings.