Semiconductor device, semiconductor packaging structure and electronic equipment
By using a homogenizing layer and carrier structure composed of heat-resistant particles in semiconductor devices, the problem of damage to the homogenizing layer caused by high welding temperatures is solved, achieving good optical performance and accurate detection at high temperatures, and reducing assembly steps and time.
Patent Information
- Application Number
- CN202422707621.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-06
- Publication Date
- 2026-01-09
- Estimated Expiration
- 2034-11-06
AI Technical Summary
The high temperatures during the welding process may damage the light-diffusing layer in semiconductor devices, affecting their optical performance.
A light-diffusing layer composed of heat-resistant particles, including silicon oxide particles, titanium oxide particles, and aluminum oxide particles, is placed inside or on the surface of the light-diffusing film. It is combined with a carrier plate and an adhesive layer to protect the light-diffusing layer from high-temperature damage, and the scattering effect is improved by precisely controlling its position and shape.
Under high-temperature conditions, the homogenizing layer maintains good optical performance, avoids damage, improves the detection accuracy and structural compactness of semiconductor devices, and reduces assembly steps and time.
Smart Images
Figure CN223786418U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor technology, specifically to a semiconductor device, a semiconductor packaging structure, and an electronic device. Background Technology
[0002] Semiconductor devices such as spectral sensors and ambient light sensors consist of a semiconductor layer, a filter layer, and a light-diffusing layer stacked sequentially. The light-diffusing layer scatters ambient light onto the filter layer. Semiconductor devices typically require soldering during the packaging process; however, the high temperatures generated during soldering can damage the light-diffusing layer. Utility Model Content
[0003] This application provides a semiconductor device, a semiconductor packaging structure, and an electronic device that helps to prevent the homogenization layer from being damaged by high temperatures.
[0004] In a first aspect, embodiments of this application provide a semiconductor device, comprising: a semiconductor layer, a first filter layer, and a light-diffusing layer stacked sequentially, wherein the first filter layer is located between the semiconductor layer and the light-diffusing layer, the semiconductor layer has a first photosensitive device connected to the first filter layer, and ambient light is transmitted to the first photosensitive device sequentially through the light-diffusing layer and the first filter layer, wherein the light-diffusing layer is used to receive and scatter ambient light, the first filter layer is used to receive ambient light scattered by the light-diffusing layer and filter the ambient light, and the first photosensitive device is used to receive the filtered ambient light, wherein the light-diffusing layer includes a light-diffusing film and a plurality of light-diffusing particles, the light-diffusing film is disposed on the semiconductor layer, the light-diffusing particles are disposed on the light-diffusing film, and the light-diffusing particles are heat-resistant particles.
[0005] With the above settings, when packaging semiconductor devices, the homogenizing particles can still maintain good optical performance under heat conditions, which helps to avoid damage to the homogenizing layer due to high temperature.
[0006] In some embodiments that may include the above-described embodiments, the homogenizing particles include at least one of silicon oxide particles, titanium oxide particles, and aluminum oxide particles.
[0007] With the above settings, the homogenizing particles can still maintain good optical performance under heating conditions, which helps to avoid damage to the homogenizing layer due to high temperature.
[0008] In some embodiments that may include the above-described embodiments, a portion of the homogenizing particles is located inside the homogenizing film, while the remaining portion of the homogenizing particles is exposed outside the homogenizing film.
[0009] The above settings improve the scattering effect of the homogenizing layer.
[0010] In some embodiments that may include the above embodiments, the light-diffusing layer further includes a carrier plate and an adhesive layer. The light-diffusing film, the carrier plate and the adhesive layer are stacked sequentially. The carrier plate is located between the light-diffusing film and the adhesive layer. The light-diffusing film is disposed on one side of the carrier plate and the adhesive layer is disposed on the other side of the carrier plate. The carrier plate is bonded to the semiconductor layer through the adhesive layer.
[0011] The above settings enable the adhesive layer to be packaged together with the semiconductor device.
[0012] In some embodiments that may include the above embodiments, the carrier plate includes a glass plate.
[0013] The above-described design helps prevent damage to the carrier plate from high temperatures. Simultaneously, the carrier plate's rigidity facilitates clamping operations regardless of the size of the homogenizing layer, allowing for more precise placement of the homogenizing layer on the semiconductor layer and improving alignment accuracy between them. Furthermore, it enables more precise control over the shape, size, and assembly position of the homogenizing layer.
[0014] In some embodiments that may include the above embodiments, the orthogonal projection of the homogenizing layer lies within the orthogonal projection of the semiconductor layer in a plane parallel to the semiconductor layer.
[0015] The above settings reduce the volume of the homogenization layer, making the semiconductor device structure more compact.
[0016] In some embodiments that may include the above embodiments, on the semiconductor layer, the orthogonal projection of the first filter layer is located within the orthogonal projection of the homogenizing layer.
[0017] With the above settings, the light-diffusing layer covers the first filter layer, so that the ambient light transmitted to the first filter layer is scattered, thereby improving the detection accuracy of the semiconductor device.
[0018] In some embodiments that may include the above embodiments, multiple first filter layers and first photosensitive devices are provided. Each first filter layer is disposed on a semiconductor layer at intervals from each other. Each first photosensitive device is connected to a different first filter layer. Each first filter layer is used to transmit ambient light of different wavelengths to a different first photosensitive device.
[0019] With the above setup, the semiconductor device can be used to detect the intensity of ambient light in multiple wavelength bands.
[0020] In some embodiments that may include the above embodiments, the first filter layer is used to transmit ambient light of a first wavelength band to the first photosensitive device, where the first wavelength band is the visible light band.
[0021] With the above setup, semiconductor devices can be used to detect the intensity of ambient light in the visible light band.
[0022] In some embodiments that may include the above embodiments, a second filter layer is further provided at a distance from the first filter layer. The second filter layer and the first filter layer are disposed on the same side of the semiconductor layer. The semiconductor layer also has a second photosensitive device. The second photosensitive device is connected to the second filter layer. The second filter layer is used to receive ambient light and transmit ambient light of a second band to the second photosensitive device. The second band is the infrared band. On the semiconductor layer, the orthographic projection of the second filter layer and the orthographic projection of the homogenizing layer do not overlap.
[0023] By implementing the above settings, the scattering of infrared light by the homogenization layer is avoided, thereby improving the detection accuracy of infrared light intensity by semiconductor devices.
[0024] In some embodiments that may include the above embodiments, the semiconductor layer and the first filter layer together constitute at least a portion of the spectral sensor.
[0025] With the above setup, the semiconductor device can be used to detect the spectral data of ambient light.
[0026] In some embodiments that may include the above embodiments, the semiconductor layer and the first filter layer together constitute at least a portion of the ambient light sensor.
[0027] With the above setup, the semiconductor packaging structure can be used to detect the intensity of ambient light.
[0028] Secondly, embodiments of this application provide a semiconductor packaging structure, including: a substrate and a semiconductor device as described in any of the above embodiments, wherein the semiconductor device is disposed on the substrate and electrically connected to the substrate.
[0029] The above configuration helps to prevent damage to the homogenization layer due to high temperatures during the soldering assembly of the semiconductor package structure. Furthermore, assembling the homogenization layer along with the semiconductor package structure saves assembly steps and reduces assembly time.
[0030] Thirdly, embodiments of this application also provide another semiconductor packaging structure, including: a substrate, a packaging layer, and a semiconductor device as described in any of the above embodiments. The semiconductor device is disposed on the substrate and located between the packaging layer and the substrate, and the semiconductor layer is electrically connected to the substrate.
[0031] The above configuration helps to prevent damage to the homogenization layer due to high temperatures during the soldering assembly of the semiconductor package structure. Furthermore, assembling the homogenization layer along with the semiconductor package structure saves assembly steps and reduces assembly time.
[0032] Fourthly, embodiments of this application provide an electronic device, including: a housing, a motherboard, and a semiconductor packaging structure as described in any of the above embodiments. The housing has a cavity, the motherboard is disposed within the cavity, the semiconductor packaging structure is disposed on the motherboard, a substrate is electrically connected to the motherboard, and the semiconductor packaging structure is used to receive ambient light transmitted to the electronic device.
[0033] With the above configuration, the homogenizing layer can maintain good optical performance in electronic devices, improving the detection accuracy of semiconductor packaging structures. At the same time, it saves assembly steps and reduces assembly time in electronic devices.
[0034] In some embodiments that may include the above embodiments, the electronic device further includes a camera module. The housing is provided with a first opening and a second opening that communicate with the cavity. The first opening and the second opening are located on the same side of the electronic device, with the light-diffusing surface facing the first opening and the camera module facing the second opening.
[0035] With the above setup, the semiconductor packaging structure can detect ambient light data transmitted to the camera module through the first opening.
[0036] In some embodiments that may include the above embodiments, the electronic device further includes a display module disposed in the housing, the display module having a first light-transmitting hole, and a light-diffusing layer disposed toward the first light-transmitting hole.
[0037] With the above configuration, the semiconductor packaging structure can detect ambient light data transmitted to the display module through the first light-transmitting hole. Attached Figure Description
[0038] Figure 1 A schematic diagram of the structure of an electronic device in one embodiment. Figure 1 ;
[0039] Figure 2 A schematic diagram of the structure of an electronic device in one embodiment. Figure 2 ;
[0040] Figure 3 A schematic diagram of the structure of an electronic device in one embodiment. Figure 3 ;
[0041] Figure 4 This is a schematic diagram of the semiconductor packaging structure in the first embodiment;
[0042] Figure 5 This is a schematic diagram of the semiconductor packaging structure in the second embodiment;
[0043] Figure 6 This is a schematic diagram of the semiconductor packaging structure in the third embodiment;
[0044] Figure 7This is a schematic diagram of the structure of a semiconductor device in one embodiment;
[0045] Figure 8 This is a schematic diagram of the homogenization layer in one embodiment;
[0046] Figure 9 This is a schematic diagram of the homogenization layer in another embodiment;
[0047] Figure 10 This is a schematic diagram of the structure of the semiconductor layer, the first filter layer, and the second filter layer in one embodiment;
[0048] Figure 11 This is a schematic diagram of the structure of the semiconductor layer, the first filter layer, the second filter layer, and the photoresist in one embodiment;
[0049] Figure 12 This is a schematic diagram of the structure of the semiconductor layer, the first filter layer, the second filter layer, and the photoresist in another embodiment;
[0050] Figure 13 This is a schematic diagram of a homogenizing particle suspension structure comprising a semiconductor layer, a first filter layer, a second filter layer, a photoresist, and a photoresist layer, in one embodiment.
[0051] Figure 14 for Figure 6 A schematic diagram of the semiconductor packaging structure from another angle;
[0052] Figure 15 This is a schematic diagram of the structure of a semiconductor device in another embodiment;
[0053] Figure 16 This is a schematic diagram of the carrier plate in one embodiment;
[0054] Figure 17 This is a schematic diagram of the structure of the carrier plate and the homogenizing particle suspension in one embodiment;
[0055] Figure 18 This is a schematic diagram of the structure of the carrier plate and the homogenizing film in one embodiment;
[0056] Figure 19 This is a schematic diagram of the structure of the carrier plate and the homogenizing film in another embodiment;
[0057] Figure 20 This is a schematic diagram of the structure of the carrier plate and the homogenizing film in another embodiment;
[0058] Figure 21 This is a schematic diagram of the semiconductor packaging structure in the fourth embodiment;
[0059] Figure 22 This is a schematic diagram of the semiconductor packaging structure in the fifth embodiment;
[0060] Figure 23 This is a schematic diagram of the semiconductor packaging structure in the sixth embodiment;
[0061] Figure 24 This is a schematic diagram of the structure of a semiconductor device in yet another embodiment;
[0062] Figure 25 This is a schematic diagram of the semiconductor packaging structure in the seventh embodiment;
[0063] Figure 26 for Figure 25 The diagram shows a semiconductor packaging structure from another angle.
[0064] Explanation of reference numerals in the attached figures:
[0065] 10: Electronic device; 11: Housing; 12: Mid-frame; 13: Back cover; 13a: First opening; 13b: Second opening; 14: Cavity; 15: Display module; 15a: First light-transmitting hole; 15b: Second light-transmitting hole; 16: Motherboard; 17: Controller; 18: Camera module;
[0066] 20: Semiconductor packaging structure; 21: Substrate; 22: Lead wire; 23: Packaging layer;
[0067] 30: Semiconductor device; 100: Semiconductor layer; 110: First photosensitive device; 120: Second photosensitive device; 200: First filter layer; 300: Second filter layer; 400: Light-diffusing layer; 410: Light-diffusing film; 420: Light-diffusing particles; 430: Carrier plate; 440: Adhesive layer;
[0068] 40: Photoresist; 50: Preset area; 60: Homogenized particle suspension. Detailed Implementation
[0069] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all possible embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0070] This application provides an electronic device, which may include at least one of the following: mobile phone, tablet computer, camera, camcorder, spectrometer, etc. This application does not limit the type of electronic device.
[0071] The following description uses a mobile phone as an example of an electronic device. However, the electronic device in this application embodiment is not limited to a mobile phone. Please refer to... Figure 1 The electronic device 10 includes a housing 11, which has a cavity 14. The housing 11 may include a middle frame 12 and a rear cover 13, the rear cover 13 covering one side of the middle frame 12 and forming the cavity 14 together with the middle frame 12. The electronic device 10 also includes a display module 15, which covers the other side of the middle frame 12 and closes the cavity 14.
[0072] The electronic device 10 also includes a motherboard 16 and a controller 17 disposed within the cavity 14. The motherboard 16 may be disposed on the mid-frame 12, and the controller 17 may be disposed on the motherboard 16 and electrically connected to the motherboard 16. The controller 17 may include at least one of a central processing unit (CPU), a system-on-chip (SoC), and an application-specific integrated circuit (ASIC). The display module 15 is electrically connected to the motherboard 16 and the controller 17, and the controller 17 can be used to control the display module 15. For example, the controller 17 can be used to control the display module 15 to turn on or off, and the controller 17 can also be used to adjust the color temperature and brightness of the display module 15.
[0073] The electronic device 10 of this application embodiment further includes a semiconductor package structure 20 disposed within the cavity 14. The semiconductor package structure 20 may include at least one of sensors such as a spectral sensor, an ambient light sensor, a color sensor, and a photoelectric proximity sensor. The semiconductor package structure 20 may be disposed on the motherboard 16 and electrically connected to the motherboard 16 and the controller 17. In some implementations, the semiconductor package structure 20 may be soldered onto the motherboard 16. The semiconductor package structure 20 is used to detect the intensity of ambient light transmitted to the electronic device 10, and the controller 17 is used to receive the detection result of the semiconductor package structure 20. Here, "ambient light" can be understood as the light in the working environment of the electronic device 10, and ambient light may include visible light and invisible light. For example, ambient light may include at least one of sunlight, lamplight, infrared light, etc.
[0074] Please combine Figure 1 and Figure 2 In one optional embodiment, the display module 15 is provided with a first light-transmitting hole 15a, which may be filled with a light-transmitting material such as silicon nitride, silicon oxide, polyimide (PI), or epoxy resin. The semiconductor package structure 20 may be positioned facing the first light-transmitting hole 15a, and the semiconductor package structure 20 may receive ambient light transmitted to the electronic device 10 through the first light-transmitting hole 15a.
[0075] In an embodiment where the semiconductor package structure 20 includes an ambient light sensor, the semiconductor package structure 20 can detect the intensity of ambient light transmitted to the electronic device 10 through the first light-transmitting hole 15a. The controller 17 is used to receive the detection result of the ambient light intensity by the semiconductor package structure 20 and adjust the brightness of the display module 15 according to the detection result, so that the display module 15 displays clearly and optimizes the visual experience.
[0076] In an embodiment where the semiconductor package structure 20 includes a color temperature sensor, the semiconductor package structure 20 can detect the color temperature of the ambient light transmitted to the electronic device 10 through the first light-transmitting hole 15a. The controller 17 is used to receive the detection result of the ambient light color temperature by the semiconductor package structure 20 and adjust the color temperature of the display module 15 according to the detection result to improve the display effect of the display module 15 and optimize the visual experience.
[0077] In embodiments where the semiconductor package structure 20 includes a photoelectric proximity sensor, the electronic device 10 further includes an infrared emitter. The infrared emitter may be disposed on the semiconductor package structure 20, or it may also be disposed on the motherboard 16. The infrared emitter is used to emit infrared light, and the semiconductor package structure 20 is used to detect the intensity of the infrared light reflected by an obstructed object. The obstructed object may include at least one of the following: various parts of the human body, clothing, a tabletop, etc.
[0078] The controller 17 receives the infrared intensity detection results from the semiconductor package structure 20 and determines whether an obstruction is close to the display module 15 based on the detection results. For example, when the semiconductor package structure 20 detects that the infrared intensity reflected by the obstruction is strong, the controller 17 determines that the obstruction is close to the display module 15 and controls the display module 15 to turn off to avoid accidental touch; when the semiconductor package structure 20 detects that the infrared intensity reflected by the obstruction is weak, the controller 17 determines that the obstruction is far away from the display module 15 and controls the display module 15 to turn on.
[0079] Please continue to refer to Figure 1 and Figure 2In some implementations, the electronic device 10 also includes a camera module 18 disposed within the cavity 14. The camera module 18 can be mounted on the motherboard 16 and electrically connected to the motherboard 16, the controller 17, and the display module 15. The camera module 18 may include a first camera module serving as a front-facing camera. Correspondingly, the display module 15 is also provided with a second light-transmitting hole 15b, which is positioned close to the first light-transmitting hole 15a. The second light-transmitting hole 15b may be filled with light-transmitting materials such as silicon nitride, silicon oxide, polyimide (PI), or epoxy resin. The first camera module can be positioned facing the second light-transmitting hole 15b to acquire image information through the second light-transmitting hole 15b and transmit the image information to the controller 17, thereby realizing functions such as video recording and photo taking.
[0080] Based on the above structure, in the embodiment where the semiconductor package structure 20 includes a spectral sensor, the semiconductor package structure 20 can detect the spectral data of ambient light transmitted to the first camera module through the first light-transmitting hole 15a. The controller 17 receives the detection results of the ambient light spectral data from the semiconductor package structure 20 and adjusts parameters such as the white balance and exposure value of the first camera module according to the detection results to correct the image information acquired by the first camera module and improve image quality. Of course, the controller 17 can also adjust the parameters of the first camera module according to other detection results from the semiconductor package structure 20, such as the intensity and color temperature of the ambient light.
[0081] In another alternative embodiment, please combine Figure 1 and Figure 3 The housing 11 has a first opening 13a communicating with the cavity 14. The first opening 13a can be located on the back cover 13. The semiconductor package structure 20 can be positioned facing the first opening 13a and can receive ambient light transmitted to the electronic device 10 through the first opening 13a.
[0082] The camera module 18 may also include a second camera module as a rear camera. Correspondingly, the rear cover 13 is also provided with a second opening 13b communicating with the cavity 14, and the second opening 13b is positioned close to the first opening 13a. The second camera module can be positioned facing the second opening 13b and can acquire image information through the second opening 13b.
[0083] Based on the above structure, the semiconductor package structure 20 can be used to detect ambient light data transmitted to the second camera module. The controller 17 can adjust the parameters of the second camera module according to the detection results of the semiconductor package structure 20. The adjustment method of the controller 17 for the second camera module can refer to the adjustment method of the controller 17 for the first camera module, and will not be described again here.
[0084] Please refer to Figure 4This application provides a semiconductor packaging structure 20, which includes a substrate 21 and a semiconductor device 30. The semiconductor device 30 is disposed on the substrate 21 and electrically connected to the substrate 21.
[0085] In some implementations, a plurality of bumps are provided between the semiconductor device 30 and the substrate 21. The material used to make the bumps may include at least one of metals such as tin, copper, and gold. The semiconductor device 30 and the substrate 21 are connected by the bumps and electrically connected by the bumps.
[0086] For other implementations, please refer to Figure 5 The semiconductor package structure 20 also includes leads 22, through which the substrate 21 and the semiconductor device 30 are electrically connected. The material used to make the leads 22 may include at least one of metals such as gold, aluminum, and copper. One end of the lead 22 is connected to the contacts of the semiconductor device 30, and the other end of the lead 22 is connected to the substrate 21 to electrically connect the substrate 21 and the semiconductor device 30.
[0087] Please refer to Figure 6 This application provides another semiconductor packaging structure 20, which includes a substrate 21, a packaging layer 23, and a semiconductor device 30. Both the semiconductor device 30 and the packaging layer 23 are disposed on the substrate 21, with the packaging layer 23 covering the semiconductor device 30, and the semiconductor device 30 located between the substrate 21 and the packaging layer 23. The semiconductor device 30 can be electrically connected to the substrate 21 via bumps, or it can also be electrically connected to the substrate 21 via leads 22. Ambient light is transmitted to the semiconductor device 30 through the packaging layer 23. In some implementations, the material used to make the packaging layer 23 may include at least one of light-transmitting materials such as epoxy resin, polyurethane resin, polyester, and polycarbonate.
[0088] In the above embodiments, the step of preparing the semiconductor package structure 20 may include:
[0089] like Figure 4 As shown: S110, the semiconductor device is mounted on the substrate.
[0090] In some implementations, the semiconductor device 30 can be mounted on the substrate 21 by soldering.
[0091] like Figure 5 As shown: S120, connect one end of the lead to the contact of the semiconductor device, and connect the other end of the lead to the substrate.
[0092] In some implementations, lead 22 can be connected to the contacts of semiconductor device 30 and substrate 21 by soldering.
[0093] like Figure 6As shown: S130, the encapsulation layer is applied to the semiconductor device.
[0094] In some implementations, the encapsulation layer 23 can be formed by injection molding; or, the encapsulation layer 23 can be formed by processing heated epoxy resin particles using a resin transfer molding (RTM) process; or, the encapsulation layer 23 can also be formed by processing heated epoxy resin particles using a compression molding process.
[0095] Please refer to Figure 7 This application provides a semiconductor device 30, which includes a semiconductor layer 100. For example... Figure 4 As shown, a semiconductor layer 100 is stacked on a substrate 21 and electrically connected to the substrate 21.
[0096] Semiconductor layer 100 includes a hole-type semiconductor (P-type semiconductor) and an electron-type semiconductor (N-type semiconductor). The hole-type semiconductor and the electron-type semiconductor are in contact with each other and form a PN junction at the contact point. When light shines on the PN junction, the PN junction can undergo the photovoltaic effect and generate current in the circuit, thereby converting the light intensity signal into a current signal, realizing the conversion of photoelectric signals.
[0097] The semiconductor layer 100 has a first photosensitive device 110, which includes at least a partial PN junction. With the above configuration, the first photosensitive device 110 can be used to detect the intensity of ambient light.
[0098] Please refer to Figure 7 The semiconductor device 30 further includes a first filter layer 200, which is stacked on the semiconductor layer 100 and can be connected to the first photosensitive device 110. Ambient light is transmitted to the first photosensitive device 110 through the first filter layer 200. The semiconductor layer 100 and the first filter layer 200 can together constitute at least part of at least one of the following sensors: an ambient light sensor, a color temperature sensor, and a spectral sensor.
[0099] In some implementations, the first filter layer 200 can be formed using an optical coating process. The first filter layer 200 has multiple thin films stacked along a direction perpendicular to the semiconductor layer 100. The materials used to make the thin films can include at least one of silicon oxide, titanium oxide, magnesium fluoride, and metals. Each thin film can be made of a different material, and the thickness of each film can be different, resulting in different refractive indices for ambient light. When ambient light passes through each thin film sequentially, different wavelengths of ambient light undergo constructive or destructive interference, allowing some wavelengths of ambient light to pass through the first filter layer 200 while preventing the remaining wavelengths from passing through, thus achieving the filtering of ambient light.
[0100] Based on the above structure, the first filter layer 200 can be used to receive and filter ambient light, so that ambient light of a certain wavelength can be transmitted to the first photosensitive device 110.
[0101] In some implementations, the first filter layer 200 is used to transmit ambient light of a first wavelength band to the first photosensitive device 110. The first wavelength band may include the visible light band. For example, in embodiments where the semiconductor layer 100 and the first filter layer 200 together constitute at least a portion of the ambient light sensor, the first wavelength band may include 380 nanometers to 780 nanometers. Of course, the first wavelength band may also include the invisible light band.
[0102] In one optional embodiment, multiple first filter layers 200 and first photosensitive devices 110 are provided. Each first filter layer 200 is disposed on the semiconductor layer 100 at intervals from each other, and each first photosensitive device 110 is connected to a different first filter layer 200. Each first filter layer 200 is a thin film of different materials and different thicknesses, so as to transmit ambient light of different wavelengths to different first photosensitive devices 110.
[0103] For example, in embodiments where the semiconductor layer 100 and the first filter layer 200 together constitute at least a portion of the spectral sensor, there may be eight first filter layers 200 and eight first photosensitive devices 110. Each first filter layer 200 may be used to transmit ambient light in the 405 nm to 425 nm band, 435 nm to 455 nm band, 470 nm to 490 nm band, 505 nm to 525 nm band, 545 nm to 565 nm band, 580 nm to 600 nm band, 620 nm to 640 nm band, and 670 nm to 690 nm band to a different first photosensitive device 110.
[0104] Of course, in other embodiments, the first filter layer 200 and the first photosensitive device 110 may also be provided in other quantities such as four or twelve.
[0105] In one alternative embodiment, please refer to Figure 7 The semiconductor layer 100 also has a second photosensitive device 120, which includes at least a partial PN junction and is used to detect the intensity of received ambient light.
[0106] The semiconductor device 30 also includes a second filter layer 300, which is stacked on top of the semiconductor layer 100 and can be connected to the second photosensitive device 120. Ambient light is transmitted to the second photosensitive device 120 through the second filter layer 300. In some implementations, the second filter layer 300 can be formed by an optical coating process. The second filter layer 300 has multiple thin films stacked along a direction perpendicular to the semiconductor layer 100. The materials used to make the thin films can include at least one of silicon oxide, titanium oxide, magnesium fluoride, and metals. Each thin film can be made of a different material, and the thickness of each thin film can be different.
[0107] The second filter layer 300 and the first filter layer 200 are disposed on the same side of the semiconductor layer 100, and the second filter layer 300 is spaced apart from the first filter layer 200. The second filter layer 300 may have a thin film of different material and different thickness than the first filter layer 200, so as to filter ambient light of different wavelengths than the first wavelength band.
[0108] In some implementations, the second filter layer 300 is used to receive ambient light and transmit a second band of ambient light to the second photosensitive device 120. This second band may include an infrared band. For example, in embodiments where the semiconductor layer 100 and the second filter layer 300 together constitute at least a portion of a photoelectric proximity sensor, the second band may include 850 nanometers to 940 nanometers. Of course, the second band may also include other bands different from the first band.
[0109] Please continue to refer to Figure 7 The semiconductor device 30 in this embodiment further includes a light-diffusing layer 400, wherein the light-diffusing layer 400, the first light-filtering layer 200, and the semiconductor layer 100 are stacked. The light-diffusing layer 400 may be in direct contact with the first light-filtering layer 200, or a transparent medium such as silicon oxide may be provided between the light-diffusing layer 400 and the first light-filtering layer 200.
[0110] In some implementation methods, please combine Figure 2 and Figure 7 The light-diffusing layer 400 can face the first light-transmitting aperture 15a to receive ambient light transmitted to the semiconductor device 30 through the first light-transmitting aperture 15a; or, please combine with Figure 3 and Figure 7 The light-diffusing layer 400 can face the first opening 13a to receive ambient light transmitted to the semiconductor device 30 through the first opening 13a. In the above example, the ambient light is transmitted to the first photosensitive device 110 through the light-diffusing layer 400 and the first filter layer 200 in sequence.
[0111] Please refer to Figure 6 In an embodiment where the semiconductor package structure 20 includes a package layer 23, the light-diffusing layer 400 is located between the package layer 23 and the substrate 21. Ambient light is transmitted to the first photosensitive device 110 via the package layer 23, the light-diffusing layer 400, and the first filter layer 200 in sequence. Through this configuration, the light-diffusing layer 400 can be assembled with the semiconductor package structure 20 into the electronic device 10 (e.g., [example device]). Figure 1 As shown, this design saves assembly steps and reduces assembly time. Simultaneously, it avoids the need for supports such as brackets to support the light-diffusing layer 400, thus reducing assembly costs. Furthermore, since the light-diffusing layer 400 is located within the encapsulation layer 23, the encapsulation layer 23 can isolate and protect the light-diffusing layer 400. The light-diffusing layer 400 has minimal impact on the height dimension of the semiconductor package structure 20 in the direction perpendicular to the substrate 21, and may even not increase the height dimension of the semiconductor package structure 20.
[0112] The light-diffusing layer 400 scatters ambient light onto the first filter layer 200, allowing ambient light to propagate to the first filter layer 200 in multiple directions. This improves the response intensity of the first filter layer 200 to ambient light and reduces the influence of the direction of ambient light on the filtering effect of the first filter layer 200. Therefore, the semiconductor device 30 is less affected by the field of view, and it can maintain high detection accuracy even when ambient light propagates from different directions.
[0113] Please combine Figure 7 and Figure 8 The light-diffusing layer 400 includes a light-diffusing film 410 and a plurality of light-diffusing particles 420. The light-diffusing film 410 is stacked on the first filter layer 200, and the light-diffusing particles 420 are disposed on the light-diffusing film 410. The light-diffusing film 410 and the light-diffusing particles 420 are made of different light-transmitting materials, so that ambient light will be scattered when it passes through the interface where the light-diffusing film 410 and the light-diffusing particles 420 are in contact, and ambient light propagating in the same direction will be scattered in different directions after passing through the light-diffusing layer 400. In some implementations, the material used to make the light-diffusing film 410 may include at least one of epoxy resin and polyimide (PI).
[0114] The homogenizing particles 420 are heat-resistant particles. Here, "heat-resistant particles" can be understood as meaning that the homogenizing particles 420 possess a certain degree of heat resistance, maintaining good optical performance even under heated conditions. For example, the homogenizing particles 420 can maintain good optical performance even at temperatures ranging from 150℃ to 250℃. Therefore, as... Figure 1 As shown, during the process of soldering the semiconductor package structure 20 onto the motherboard 16, or, as... Figure 4As shown, during the process of welding the semiconductor device 30 onto the substrate 21, the homogenization layer 400 is not easily damaged by high temperature.
[0115] The semiconductor device 30 of this application embodiment includes a semiconductor layer 100, a first filter layer 200, and a light-diffusing layer 400 stacked sequentially. The semiconductor layer 100 has a first photosensitive device 110 connected to the first filter layer 200. The light-diffusing layer 400 is used to receive ambient light and scatter the ambient light to the first filter layer 200. The first filter layer 200 is used to filter the scattered ambient light and transmit the filtered ambient light to the first photosensitive device 110. The light-diffusing layer 400 includes a light-diffusing film 410 and a plurality of light-diffusing particles 420. The light-diffusing film 410 is disposed on the semiconductor layer 100, and the light-diffusing particles 420 are disposed on the light-diffusing film 410. The light-diffusing particles 420 are heat-resistant particles, thereby helping to avoid damage to the light-diffusing layer 400 due to high temperature.
[0116] In one optional embodiment, the homogenizing particles 420 may include at least one of silicon oxide particles, titanium oxide particles, and aluminum oxide particles. Alternatively, the material used to form the homogenizing particles 420 may include at least one of silicon oxide, titanium oxide, and aluminum oxide. This helps to prevent damage to the homogenizing layer 400 due to high temperatures.
[0117] In one alternative embodiment, please refer to Figure 9 A portion of the homogenizing particles 420 is located within the homogenizing film 410, while the remaining portion is exposed within the homogenizing film 410. Therefore, the homogenizing particles 420 exposed within the homogenizing film 410 can contact the air, and ambient light is scattered when it passes through the interface between the air and the homogenizing particles 420, thus improving the scattering effect of the homogenizing layer 400. Alternatively, please refer to... Figure 6 and Figure 9 The light-diffusing particles 420 exposed on the light-diffusing film 410 can also contact the encapsulation layer 23. When ambient light passes through the interface between the encapsulation layer 23 and the light-diffusing particles 420, it will also be scattered, which improves the scattering effect of the light-diffusing layer 400.
[0118] In the above embodiments, the light-diffusing layer 400 can be fabricated on the semiconductor layer 100 and the first filter layer 200 by a lift-off process to fabricate the semiconductor device 30 of this application embodiment. Exemplarily, the steps for fabricating the semiconductor device 30 may include:
[0119] Please combine Figure 10 and Figure 11 S210. Photoresist is applied to the semiconductor layer 100 and the first filter layer 200.
[0120] The photoresist 40 may include at least one of positive and negative photoresist. This embodiment will use a positive photoresist as an example. In some implementations, step S210 can be performed after the semiconductor layer 100 has been etched.
[0121] like Figure 12 As shown: S220, remove the photoresist within the preset area.
[0122] Here, "preset area" can be understood as the homogenization layer 400 (e.g., Figure 7 (As shown) the area to be covered. In some implementations, the photoresist 40 within the preset area 50 can be removed using a projection lithography machine and a developer.
[0123] A projection lithography machine may include a light source and a photomask, wherein the light source is used to illuminate the photoresist 40. The photomask is located between the light source and the photoresist 40 and is used to block the light source. Under the blockage of the photomask, the light source illuminates only the photoresist 40 within a preset area 50, thus exposing the photoresist 40 within the preset area 50.
[0124] The developer may include an aqueous solution of at least one of alkaline substances such as sodium hydroxide and potassium hydroxide. The developer can dissolve and remove the photoresist 40 in the preset area 50 after exposure.
[0125] In the above steps, the shape, size and position of the preset area 50 can be controlled by changing the shape, size and position of the photomask.
[0126] like Figure 13 As shown: S230, the homogenizing particle suspension is coated onto the semiconductor layer, the first filter layer and the photoresist.
[0127] In the above steps, the homogenizing particle suspension 60 may include homogenizing particles 420 (such as... Figure 8 As shown), a suspension is prepared by mixing a curing agent with liquid epoxy resin or liquid polyimide. The mass percentage of the homogenizing particles 420 can range from 20wt% to 65wt%, the mass percentage of the liquid epoxy resin or liquid polyimide can range from 75wt% to 30wt%, and the mass percentage of the curing agent can be 5wt%. When the mass percentage of the homogenizing particles 420 is high, the homogenizing layer 400 (e.g., ...) Figure 8 As shown, the light scattering effect of the light-diffusing layer 400 is good; when the mass ratio of the light-diffusing particles 420 is low, the light transmittance of the light-diffusing layer 400 is good.
[0128] In one example, the mass percentage of uniform gloss particles 420 can be 65 wt%, the mass percentage of liquid epoxy resin can be 30 wt%, and the mass percentage of curing agent can be 5 wt%; in another example, the mass percentage of uniform gloss particles 420 can be 20 wt%, the mass percentage of liquid epoxy resin can be 75 wt%, and the mass percentage of curing agent can be 5 wt%.
[0129] S240, baking homogenized particle suspension.
[0130] Through the above steps, the liquid epoxy resin and / or liquid polyimide in the homogenizing particle suspension 60 undergo a cross-linking reaction, and the internal chemical bonds form long chains, thereby solidifying to form the homogenizing layer 400 (e.g., Figure 8 (As shown).
[0131] Please combine Figure 7 , Figure 12 and Figure 13 S250, remove photoresist.
[0132] In the above steps, removing the photoresist 40 outside the preset region 50 allows the homogenizing layer 400 outside the preset region 50 to be removed along with the photoresist 40. In some implementations, the photoresist 40 can be removed by dissolving it in a stripping solution, the composition of which may include at least one of N-methylpyrrolidone (NMP), dimethyl sulfoxide (DMSO), etc.
[0133] Through the above steps, the light-diffusing layer 400 covers the preset region 50. Furthermore, by controlling the shape and size of the preset region 50, the shape and size of the light-diffusing layer 400 can be controlled more precisely, thereby reducing the volume of the light-diffusing layer 400 and making the structure of the semiconductor device 30 more compact. Simultaneously, by controlling the position of the preset region 50, the position of the light-diffusing layer 400 can be controlled more precisely, improving the alignment accuracy between the light-diffusing layer 400 and the semiconductor layer 100. For example, as... Figure 14 As shown, the homogenizing layer 400 can cover the first filter layer 200 without covering the second filter layer 300. Alternatively, the homogenizing layer 400 can cover only the first filter layer 200.
[0134] Please combine Figure 8 and Figure 9 S260, plasma-cleaned homogenizing layer.
[0135] Through the above steps, part of the homogenizing film 410 can be removed, increasing the proportion of homogenizing particles 420 exposed on the homogenizing film 410, increasing the surface roughness of the homogenizing layer 400, and enhancing the diffusion effect of the homogenizing layer 400. Furthermore, it can also make the homogenizing layer 400 and the encapsulation layer 23 (such as...) Figure 6 The connection between them is closer (as shown).
[0136] Please refer to Figure 7 Based on the above steps, the semiconductor device 30 has a light-diffusing layer 400 formed on the semiconductor layer 100 and the first filter layer 200. It can scatter ambient light to the first filter layer 200 without assembling the semiconductor device 30 and the light-diffusing layer 400 through other steps.
[0137] In one alternative embodiment, please refer to Figure 15 The homogenizing layer 400 may further include a carrier plate 430 laminated with the homogenizing film 410, the carrier plate 430 being made of a light-transmitting material. In some implementations, the carrier plate 430 includes a glass plate; that is, the material used to make the carrier plate 430 may include glass. This helps to prevent damage to the carrier plate 430 due to high temperatures. In other implementations, the material used to make the carrier plate 430 may also include colorless transparent polyimide (CPI).
[0138] In the above implementation, the carrier plate 430 has a certain rigidity, making it easy to clamp the light-diffusing layer 400 regardless of its size, thus allowing the light-diffusing layer 400 to be accurately disposed on the semiconductor layer 100, improving the alignment accuracy between the light-diffusing layer 400 and the semiconductor layer 100. Through this arrangement, the shape and size of the light-diffusing layer 400 can also be controlled more precisely to reduce its volume, making the structure of the semiconductor device 30 more compact. For example, as... Figure 14 As shown, the homogenizing layer 400 can cover the first filter layer 200 without covering the second filter layer 300. Alternatively, the homogenizing layer 400 can cover only the first filter layer 200.
[0139] In one alternative embodiment, please continue to refer to Figure 15 The light-diffusing layer 400 may further include an adhesive layer 440, which is stacked with a carrier substrate 430. The light-diffusing film 410 is disposed on one side of the carrier substrate 430, and the adhesive layer 440 is disposed on the other side of the carrier substrate 430. The adhesive layer 440 is connected to the semiconductor layer 100, and the light-diffusing layer 400 is bonded to the semiconductor layer 100 via the adhesive layer 440. This configuration allows the adhesive layer 440 to be packaged together with the semiconductor device 30.
[0140] The adhesive layer 440 is made of a light-transmitting material. In some implementations, the material used to make the adhesive layer 440 may include at least one of epoxy resin, silicone sealant, etc. With the above configuration, the adhesive layer 440 can maintain good optical performance under heated conditions and is not easily damaged by high temperatures.
[0141] In the above embodiments, the light-diffusing layer 400 can be prepared by spin coating and bonded to the semiconductor layer 100 and the first filter layer 200 to fabricate the semiconductor device 30 of this application embodiment. Exemplarily, the steps for fabricating the semiconductor device 30 may include:
[0142] Please combine Figure 16 and Figure 17 S310. Spin-coat the homogeneous particle suspension onto the carrier plate.
[0143] The composition of homogeneous particle suspension 60 can be found above and will not be repeated here.
[0144] In some implementations, the homogenizing particulate suspension 60 can be spin-coated onto a carrier plate 430 using a spin coater, which includes a clamp and a rotating mechanism. The clamp holds the carrier plate 430 to facilitate the application of the homogenizing particulate suspension 60 onto it. For example, the clamp can hold the carrier plate 430 using vacuum adsorption. The rotating mechanism is connected to the clamp and drives its rotation, causing the carrier plate 430 to rotate with the clamp. Thus, the homogenizing particulate suspension 60 is coated onto the carrier plate 430 under the influence of inertia and centripetal force.
[0145] During the rotation of the fixture, the rotation mechanism can be used to raise the fixture to a higher speed in a short time to reduce the thickness of the homogenizing particle suspension 60 on the carrier plate 430. After the homogenizing particle suspension 60 reaches the preset value, the rotation speed of the fixture can be slowly reduced until the fixture stops rotating to ensure that the thickness of the homogenizing particle suspension 60 on the carrier plate 430 is uniform.
[0146] Please refer to Figure 18 S320, baking homogenized particle suspension.
[0147] Step S320 can be referred to step S240, and will not be repeated here.
[0148] S330, plasma cleaning homogenizing film.
[0149] Step S330 can be referred to step S260, and will not be repeated here.
[0150] like Figure 19 As shown: S340, grinding carrier plate.
[0151] In the above steps, by polishing the side of the carrier plate 430 away from the homogenizing film 410, the thickness of the carrier plate 430 can be reduced to a preset value. For example, the preset value of the thickness of the carrier plate 430 can be in the range of 0.08 mm to 0.12 mm, and the preset value of the thickness of the carrier plate 430 can include at least one of 0.08 mm, 0.1 mm and 0.12 mm.
[0152] In some implementations, the light-diffusing film 410 can be glued to a support plate, support frame, or other support to fix the carrier plate 430. Then, a coarse grinding wheel is used to grind the side of the carrier plate 430 away from the light-diffusing film 410, reducing the thickness of the carrier plate 430 to a preset value. Next, a fine grinding wheel is used to grind and polish the side of the carrier plate 430 away from the light-diffusing film 410. Finally, the glue is removed, and the carrier plate 430 is removed from the support. The coarse grinding wheel has a larger abrasive particle size than the fine grinding wheel, and its hardness is lower than that of the fine grinding wheel.
[0153] like Figure 20 As shown: S350, cutting carrier plate.
[0154] In the above steps, the carrier plate 430 can be cut according to the preset dimensions. For example, the carrier plate 430 can be cut into a rectangle, with a length of 1 mm and a width of 0.5 mm.
[0155] In embodiments where the carrier 430 includes a glass wafer, the larger carrier 430 can be cut to obtain multiple smaller carriers 430.
[0156] like Figure 15 As shown: S360, the carrier plate is bonded to the semiconductor layer and the first filter layer.
[0157] In the above steps, the carrier plate can be adsorbed by a suction cup, and the light-diffusing layer 400 can be bonded to the semiconductor layer 100 and the first filter layer 200 by the adhesive layer 440.
[0158] The semiconductor device 30 prepared based on the above steps has a light-diffusing layer 400 bonded to the semiconductor layer 100 and the first filter layer 200. It can scatter ambient light to the first filter layer 200 without assembling the semiconductor device 30 and the light-diffusing layer 400 through other steps.
[0159] The semiconductor packaging structure 20 fabricated based on the aforementioned semiconductor device 30 can be referred to... Figure 21 , Figure 22 and Figure 23 .
[0160] In one alternative embodiment, please refer to Figure 24The first filter layer 200 can be disposed on the carrier plate 430. The light-diffusing film 410, the first filter layer 200 and the carrier plate 430 are stacked, with the first filter layer 200 located between the light-diffusing film 410 and the carrier plate 430.
[0161] In an alternative embodiment, the orthographic projection of the homogenizing layer 400 may coincide with the orthographic projection of the semiconductor layer 100 in a plane parallel to the semiconductor layer 100.
[0162] In another alternative embodiment, please combine Figure 25 and Figure 26 In a plane parallel to the semiconductor layer 100, the orthographic projection of the light-diffusing layer 400 lies within the orthographic projection of the semiconductor layer 100. This reduces the volume of the light-diffusing layer 400, making the structure of the semiconductor device 30 more compact.
[0163] In one alternative embodiment, please refer to Figure 26 The orthographic projection of the first filter layer 200 onto the semiconductor layer 100 lies within the orthographic projection of the light-diffusing layer 400 onto the semiconductor layer 100. Through this arrangement, the light-diffusing layer 400 covers the first filter layer 200, causing ambient light transmitted to the first filter layer 200 to be scattered, thereby improving the detection accuracy of the semiconductor device 30.
[0164] In one alternative embodiment, please refer to Figure 14 The light-diffusing layer 400 and the second light-filtering layer 300 are spaced apart, and the orthographic projection of the second light-filtering layer 300 on the semiconductor layer 100 and the orthographic projection of the light-diffusing layer 400 on the semiconductor layer 100 do not overlap, and the light-diffusing layer 400 does not cover the second light-filtering layer 300.
[0165] With the above configuration, in embodiments where the semiconductor layer 100 and the second filter layer 300 together constitute at least a portion of the photoelectric proximity sensor, the infrared light transmitted to the second photosensitive device 120 is prevented from passing through the diffusion layer, thereby avoiding a reduction in the intensity of the infrared light and improving the detection accuracy of the semiconductor device 30.
[0166] In some implementations, the light-diffusing layer 400 in the above embodiments can also be applied to light-emitting devices such as lamp beads, light-emitting diode (LED) modules, soft-light screens, and paper-like screens; or it can also be applied to camera filters or optical filters such as soft-light lenses.
[0167] It should be noted that, in the description of the embodiments of this application, unless otherwise explicitly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection or an integral connection; they can also refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; or they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this application according to the specific circumstances.
[0168] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the embodiments of this application, and are not intended to limit them; although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or make equivalent substitutions for some or as many of the technical features as possible; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.
Claims
1. A semiconductor device, characterized in that, The semiconductor device includes a semiconductor layer, a first filter layer, and a light-diffusing layer stacked sequentially. The semiconductor layer has a first photosensitive device, which is connected to the first filter layer; the light-diffusing layer is used to receive ambient light and scatter the ambient light to the first filter layer, the first filter layer is used to filter the scattered ambient light and transmit the filtered ambient light to the first photosensitive device. The light-averaging layer includes a light-averaging film and a plurality of light-averaging particles. The light-averaging film is disposed on the semiconductor layer, and the light-averaging particles are disposed on the light-averaging film. The light-averaging particles are heat-resistant particles.
2. The semiconductor device according to claim 1, characterized in that, The homogenizing particles include at least one of silicon oxide particles, titanium oxide particles, and aluminum oxide particles.
3. The semiconductor device according to claim 1, characterized in that, A portion of the homogenizing particles is located within the homogenizing film, while the remaining portion of the homogenizing particles is exposed outside the homogenizing film.
4. The semiconductor device according to claim 1, characterized in that, The light-diffusing layer further includes a carrier plate and an adhesive layer. The light-diffusing film is disposed on one side of the carrier plate, and the adhesive layer is disposed on the other side of the carrier plate. The carrier plate is bonded to the semiconductor layer through the adhesive layer.
5. The semiconductor device according to claim 4, characterized in that, The carrier plate includes a glass plate.
6. The semiconductor device according to any one of claims 1 to 5, characterized in that, In a plane parallel to the semiconductor layer, the orthogonal projection of the homogenizing layer lies within the orthogonal projection of the semiconductor layer.
7. The semiconductor device according to any one of claims 1 to 5, characterized in that, The orthogonal projection of the first filter layer onto the semiconductor layer lies within the orthogonal projection of the homogenizing layer onto the semiconductor layer.
8. The semiconductor device according to any one of claims 1 to 5, characterized in that, The first filter layer is provided in multiple ways, and each first filter layer is disposed at intervals on the semiconductor layer; the first photosensitive device is provided in multiple ways, and each first photosensitive device is connected to a different first filter layer. Each of the first filter layers is used to transmit ambient light of different wavelengths to different first photosensitive devices.
9. The semiconductor device according to any one of claims 1 to 5, characterized in that, The first filter layer is used to transmit the ambient light of the first wavelength band to the first photosensitive device, where the first wavelength band is the visible light band.
10. The semiconductor device according to any one of claims 1 to 5, characterized in that, It also includes a second filter layer, which is disposed on the same side of the semiconductor layer as the first filter layer, and the second filter layer is spaced apart from the first filter layer; The semiconductor layer also has a second photosensitive device, which is connected to the second filter layer; the second filter layer is used to receive the ambient light and transmit the ambient light of a second band to the second photosensitive device, wherein the second band is the infrared band. The orthographic projection of the second filter layer onto the semiconductor layer and the orthographic projection of the light-diffusing layer onto the semiconductor layer do not overlap.
11. The semiconductor device according to any one of claims 1 to 5, characterized in that, The semiconductor layer and the first filter layer together constitute at least a portion of the spectral sensor; or, the semiconductor layer and the first filter layer together constitute at least a portion of the ambient light sensor.
12. A semiconductor packaging structure, characterized in that, The invention includes a substrate and a semiconductor device according to any one of claims 1 to 11, wherein the semiconductor device is disposed on the substrate and the semiconductor layer is electrically connected to the substrate.
13. A semiconductor packaging structure, characterized in that, The invention includes a substrate, a packaging layer, and a semiconductor device according to any one of claims 1 to 11, wherein the semiconductor device is disposed on the substrate and is located between the packaging layer and the substrate; the semiconductor layer is electrically connected to the substrate.
14. An electronic device, characterized in that, include: The device includes a housing, a motherboard, and a semiconductor packaging structure as described in claim 12 or 13, wherein the housing has a cavity, the motherboard is disposed within the cavity, the semiconductor packaging structure is disposed on the motherboard, and the substrate is electrically connected to the motherboard; the semiconductor packaging structure is used to receive ambient light transmitted to the electronic device.
15. The electronic device according to claim 14, characterized in that, The electronic device further includes a camera module. The housing has a first opening and a second opening that communicate with the cavity. The first opening and the second opening are located on the same side of the electronic device. The light-diffusing surface faces the first opening, and the camera module faces the second opening.
16. The electronic device according to claim 14, characterized in that, The electronic device further includes a display module disposed on the housing, the display module having a first light-transmitting hole, and the light-diffusing layer being disposed toward the first light-transmitting hole.