Transistor module and electronic equipment
By attaching magnetic components to the gate and second electrode terminals of the transistor device, electromagnetic induction is used to filter transient signals, thus solving the problem of EMI measurement failure during transistor device operation and achieving a low-power, high-efficiency operating state.
Patent Information
- Application Number
- CN202423224380.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-25
- Publication Date
- 2026-01-13
- Estimated Expiration
- 2034-12-25
AI Technical Summary
Electromagnetic interference (EMI) caused by transistor devices during operation is difficult to measure. Existing measures can suppress radiated emissions, but they increase power consumption and reduce the efficiency of transistor devices.
A magnetic component is used to mount on the gate and second electrode terminals of the transistor device. Transient signals are filtered by electromagnetic induction and converted into heat, avoiding the increase of drive resistance and thus improving efficiency at low power consumption.
It effectively suppresses radiated emissions from transistor devices, improves the throughput of electromagnetic interference measurements, and maintains high operating efficiency at low power consumption.
Smart Images
Figure CN223798692U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of computing technology, and in particular to a transistor module and electronic device. Background Technology
[0002] Transistor devices can cause electromagnetic interference (EMI) measurements of the entire power supply to fail during operation. Although measures such as increasing the drive resistor or adding absorption circuits can be taken to suppress radiated emissions, this also increases the power consumption of the transistor device and reduces its efficiency. Utility Model Content
[0003] The purpose of this application is to provide a transistor module and electronic device that can suppress radiated emissions caused by transistor devices with low power consumption and high efficiency.
[0004] In a first aspect, embodiments of this application provide a transistor module, including a transistor device and a magnetic component. The transistor device has a gate terminal, a first electrode terminal, and a second electrode terminal, and the magnetic component is sleeved on the gate terminal and the second electrode terminal of the transistor device. When the transistor device is turned on, the voltage between the gate terminal and the second electrode terminal satisfies the threshold voltage of the transistor device.
[0005] With the above technical solution, the transistor device has a gate terminal, a first electrode terminal, and a second electrode terminal that are electrically connected. During the switching process and high-frequency switching of the transistor device, the transistor device experiences significant signal transients. The magnetic component mounted on the gate terminal and the second electrode terminal dissipates these transient signals as heat, thereby preventing radiated emissions caused by signal transients during switching or high-frequency switching and improving the throughput of electromagnetic interference measurements. Furthermore, there is no electrical connection between the magnetic component and the gate terminal, or between the magnetic component and the second electrode terminal; instead, transient signals are filtered through electromagnetic induction. This does not increase the driving resistance of the transistor device, ensuring that the transistor device operates with high efficiency at low power consumption.
[0006] When a transistor is turned on, the voltage between the gate terminal and the second electrode terminal meets the threshold voltage of the transistor. Therefore, during the turn-on process, the drive current of the transistor flows through both the gate and the second electrode terminals. During this process, the drive current at the gate terminal is the same in magnitude but opposite in direction to the drive current at the second electrode terminal. Therefore, the vector of the drive current flowing through the gate and the second electrode terminals is zero. At this time, the magnetic components do not interfere with the drive current of the transistor, allowing the transistor to operate normally.
[0007] In one possible implementation, the transistor device includes an insulated-gate bipolar transistor (IGBT), wherein the collector terminal of the IGBT is a first electrode terminal and the emitter terminal of the IGBT is a second electrode terminal.
[0008] In one possible implementation, the aforementioned insulated gate bipolar transistor includes an N-channel insulated gate bipolar transistor or a P-channel insulated gate bipolar transistor.
[0009] In one possible implementation, the transistor device includes a field-effect transistor, with a first electrode terminal being the drain terminal of the field-effect transistor and a second electrode terminal being the source terminal of the field-effect transistor.
[0010] In one possible implementation, the aforementioned field-effect transistor includes an N-type field-effect transistor or a P-type field-effect transistor.
[0011] In one possible implementation, the transistor module includes a half-bridge circuit formed by two transistor devices connected in series, with the connection node between the two transistor devices being the output terminal of the half-bridge circuit.
[0012] In a half-bridge circuit, the connection point between two adjacent transistors is the midpoint of the transistor pair, which is also the output terminal of the half-bridge circuit. During high-frequency switching of the transistors, this midpoint forms a major common-mode noise source to ground. This common-mode noise source drives common-mode current to flow through the gate and second electrode terminals of the transistors. Because a magnetic component is mounted on the gate and second electrode terminals, it can filter the common-mode current flowing through them, thereby suppressing the radiated emissions caused by the common-mode current and enabling the transistors to operate with higher efficiency at lower power consumption.
[0013] In one possible implementation, the transistor module further includes a first insulating member and a second insulating member. The first insulating member is disposed on the surface of the gate terminal, and the second insulating member is disposed on the surface of the second electrode terminal. Here, the first and second insulating members ensure insulation between the gate terminal and the second electrode terminal, preventing a short circuit between the gate terminal and the second electrode terminal when the magnetic component is fitted over the gate terminal and the second electrode terminal.
[0014] In one possible implementation, the transistor module further includes a package structure, with the transistor device disposed inside the package structure. The ends of the gate terminal, the first electrode terminal, and the second electrode terminal extend outside the package structure, and a magnetic element is fitted over the ends of the gate terminal and the second electrode terminal. This package structure effectively protects the core components of the transistor device, reducing the possibility of damage.
[0015] In one possible implementation, the magnetic component includes a magnetic ring or a magnetic bead.
[0016] In one possible implementation, the magnetic component includes multiple magnetic components, all of which are disposed on the second electrode terminal and the gate terminal. This increases the filtering capability for transient signals.
[0017] Secondly, embodiments of this application also provide an electronic device, including a transistor module and a load, wherein the transistor module is the transistor module described in the first aspect of this application or any possible implementation of the first aspect, and the output terminal of the transistor module is electrically connected to the load.
[0018] The beneficial effects of the second aspect of the embodiments of this application are the same as those of the first aspect or any possible implementation thereof. Attached Figure Description
[0019] In the following description of exemplary embodiments in conjunction with the accompanying drawings, further details, features, and advantages of the embodiments of this application are claimed, in which:
[0020] Figure 1 A schematic diagram of a basic example structure of an electronic device according to an embodiment of this application is shown;
[0021] Figure 2 A schematic diagram of a basic structure of a transistor module according to an embodiment of this application is shown;
[0022] Figure 3 This paper shows a schematic diagram of a specific structure of a transistor module provided in an embodiment of this application;
[0023] Figure 4A A schematic diagram of the equivalent circuit structure of the IGBT module disclosed in an embodiment of this application is shown;
[0024] Figure 4B A schematic diagram of the electromagnetic interference suppression principle of the equivalent circuit of the IGBT module disclosed in the embodiments of this application is shown;
[0025] Figure 5A This paper presents a schematic diagram illustrating the EMI test results of a comparative example of an IGBT module disclosed in an embodiment of this application.
[0026] Figure 5B A schematic diagram showing the EMI test results of the IGBT module disclosed in an embodiment of this application is illustrated. Detailed Implementation
[0027] Embodiments of this application will now be described in more detail with reference to the accompanying drawings. While some embodiments of this application are shown in the drawings, it should be understood that this application can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the embodiments of this application. It should be understood that the accompanying drawings and embodiments of this application are for illustrative purposes only and are not intended to limit the scope of protection of the embodiments of this application.
[0028] It should be understood that the various steps described in the method implementation of this application may be performed in different orders and / or in parallel. Furthermore, the method implementation may include additional steps and / or omit the steps shown. The scope of the embodiments of this application is not limited in this respect.
[0029] The term "comprising" and its variations as used herein are open-ended, meaning "including but not limited to". The term "based on" means "at least partially based on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments". Definitions of other terms will be given in the following description. It should be noted that the concepts of "first", "second", etc., mentioned in the embodiments of this application are only used to distinguish different devices, units, or elements, and are not used to limit the order of functions performed by these devices, units, or elements, or their interdependencies.
[0030] It should be noted that the terms "one" and "more" mentioned in the embodiments of this application are illustrative rather than restrictive. Those skilled in the art should understand that, unless otherwise expressly indicated in the context, they should be understood as "one or more".
[0031] Power semiconductor devices are power electronic switches, such as insulated-gate bipolar transistors (IGBTs) and field-effect transistors (FETs). These power semiconductor devices operate at extremely high switching speeds, capable of switching thousands of times per second (kHz), with high-speed power devices reaching tens or even hundreds of kHz. During the switching process, power semiconductor devices are prone to generating strong radiated emissions (REs), causing the REs to exceed the limits and ultimately leading to failure of electromagnetic interference (EMI) tests.
[0032] This application provides a transistor module that can be applied to electronic devices to filter transient signals generated by the transistor module, thereby improving the pass rate of electronic interference measurement and ensuring that the transistor device operates with low power consumption and high efficiency.
[0033] Figure 1 A schematic diagram illustrating a basic example structure of an electronic device according to an embodiment of this application is shown. Figure 1 As shown, the electronic device 100 of this application embodiment includes a transistor module 101 and a load 102. The output terminal of the transistor module 101 is electrically connected to the load 102. Figure 1 This example only illustrates one load; in real-world applications, there could be two or more loads.
[0034] In practical applications, the transistor module 101 of this application embodiment may include one transistor device 1011, or it may include a half-bridge circuit formed by two transistor devices 1011, and the connection node of the two transistor devices 1011 included in the half-bridge circuit is the output terminal of the half-bridge circuit. It should be understood that the number of half-bridge circuits may be one, two, or three.
[0035] For example, such as Figure 1 As shown, when the transistor module 101 includes a transistor device 1011, the transistor module 101 can be an electronic switch, which can act as a circuit breaker and be used in the vehicle's braking system. When an abnormality occurs in the electrical system of the braking system (such as overload, short circuit, etc.), the DC power supply is automatically cut off to protect the safety of the electrical equipment of the braking system (such as the brake controller).
[0036] For example, when there are three half-bridge circuits connected in parallel, the three half-bridge circuits form a three-phase bridge circuit. In this case, the transistor module 101 can be a three-phase inverter or a frequency converter.
[0037] When transistor module 101 is a three-phase inverter, it can convert DC power into three-phase AC power to supply power to various loads (such as computing devices like servers and computers, charging modules in charging piles and charging hosts, photovoltaic devices, energy storage devices, and other electronic devices). When transistor module 101 is a frequency converter, it can convert AC power supplied by AC power supply into appropriate frequency and voltage to supply power to frequency conversion equipment such as frequency conversion air conditioners and frequency conversion refrigerators.
[0038] In some embodiments, such as Figure 1As shown, the transistor module 101 of this application embodiment may include a transistor device 1011. Furthermore, the transistor module 101 may also include a drive module 1012 for controlling the turn-on and turn-off of the transistor device 1011. It should be understood that when the transistor module 101 is disposed on a circuit board, the drive module 1012 has a gate connection terminal, a first electrode connection terminal, and a second electrode connection terminal connected to the circuit board. The gate terminal, first electrode terminal, and second electrode terminal of the transistor device 1011 are connected to the circuit board, such that the gate connection terminal of the drive module 1012 is electrically connected to the gate terminal of the transistor device 1011 through the circuit board, the first electrode connection terminal of the drive module 1012 is electrically connected to the first electrode terminal of the transistor device 1011 through the circuit board, and the second electrode connection terminal of the drive module 1012 is electrically connected to the second electrode terminal of the transistor device 1011 through the circuit board.
[0039] Optionally, the circuit board can also be equipped with components such as a central processing unit (CPU), controller, memory, and connectors. Figure 1 (Not shown in the image). For example, the controller described above may be one or more of a microcontroller unit (MCU), a complex programmable logic device (CPLD), and a field programmable gate array (FPGA).
[0040] This application also provides a transistor module that can suppress radiated emissions caused by transistor devices with low power consumption and high operating efficiency, thereby ensuring that EMI measurements of electronic devices pass.
[0041] Figure 2 A schematic diagram of a basic structure of a transistor module according to an embodiment of this application is shown. Figure 2 As shown, the transistor module 200 of this application embodiment includes a transistor device 201 and a magnetic element 202. The transistor device 201 can be a three-terminal transistor device, which has a gate terminal M, a first electrode terminal N1, and a second electrode terminal N2. The magnetic element 202 is sleeved on the gate terminal M and the second electrode terminal N2. Here, the same magnetic element 202 can be sleeved on both the gate electrode terminal M and the second electrode terminal N2.
[0042] In practical applications, such as Figure 2 As shown, the transistor device 201 also includes a first insulating member 2031 and a second insulating member 2032. The first insulating member 2031 is disposed on the surface of the gate terminal M, and the second insulating member 2032 is disposed on the surface of the second electrode terminal N2.
[0043] For example, a first insulating member 2031 is sleeved on the gate terminal M, and a second insulating member 2032 is sleeved on the second electrode terminal N2. Here, the first insulating member 2031 and the second insulating member 2032 ensure insulation between the gate terminal M and the second gate terminal N2, preventing a short circuit between them when the magnetic member 202 is sleeved on the gate terminal M and the second electrode terminal N2. Alternatively, a third insulating member 2033 can be sleeved on the first electrode terminal N1 to ensure good insulation between the gate terminal M, the first electrode terminal N1, and the second electrode terminal N2.
[0044] like Figure 2 As shown, during the switching process and high-frequency switching process of transistor device 201, transistor device 201 experiences significant signal transients (voltage change rate dv / dt or current change rate di / dt). At this time, the magnetic component 202, which is mounted on the gate terminal M and the second electrode terminal N2, generates a ring-shaped changing magnetic field around the gate terminal M and the second electrode terminal N2, which is dissipated as heat. This allows the magnetic component 202 to filter the transient signal, thereby reducing the radiated emissions caused by the signal transients of transistor device 201 and improving the throughput of electromagnetic interference measurements. Furthermore, there is no electrical connection between the magnetic component 202 and the gate terminal M, or between the magnetic component 202 and the second electrode terminal N2, thus not increasing the driving resistance. Therefore, transistor device 201 can operate with high efficiency at low power consumption.
[0045] In the technical solution of this application embodiment, when the transistor device 201 is turned on, the voltage between the gate terminal M and the second electrode terminal N2 meets the threshold voltage of the transistor device 201. Therefore, during the turn-on process of the transistor device 201, the drive current of the transistor device 201 flows through the gate terminal M and the second electrode terminal N2. However, during the turn-on process of the transistor device 201, the drive current on the gate terminal M and the drive current on the second electrode terminal N2 are the same in magnitude but opposite in direction. Therefore, the vector of the drive current of the transistor device 201 flowing through the gate terminal M and the second electrode terminal N2 is equal to 0. At this time, the magnetic component 202 will not interfere with the drive current of the transistor device 201, allowing the transistor device 201 to operate normally.
[0046] In some possible implementations, such as Figure 2 As shown, the transistor module 200 also includes a package structure 204. The transistor device 201 is disposed inside the package structure 204, and the ends of the gate terminal M, the first electrode terminal N1, and the second electrode terminal N2 extend outside the package structure 204. Therefore, the package structure 204 can effectively protect the transistor device 201 and reduce the possibility of damage to the transistor device 201.
[0047] like Figure 2 As shown, the ends of the gate terminal M, the first electrode terminal N1, and the second electrode terminal N2 can be understood as the portions of the gate terminal M, the first electrode terminal N1, and the second electrode terminal N2 that extend out of the package structure 204, and their lengths can be designed according to actual needs.
[0048] For example, such as Figure 2 As shown, the transistor device 201 in this embodiment can be understood as the core part of the transistor device. When the transistor device 201 is disposed in the package structure 204, and the ends of the first electrode terminal N1 and the second electrode terminal N2 pass through the outside of the package structure 204, the size of the gate terminal M, the ends of the first electrode terminal N1 and the second electrode terminal N2 is relatively large, so that the magnetic component 202 can be easily sleeved on the gate terminal M and the second electrode terminal N2.
[0049] For example, such as Figure 2 As shown, the ends of the gate terminal M, the first electrode terminal N1, and the second electrode terminal N2 can all be metal leads. The package structure 204 is sleeved on the transistor device 201, and its material can be plastic. Furthermore, thermally conductive adhesive can be injected into the package structure 204 to ensure that the transistor device 201 is securely encapsulated in the package structure 204 while improving the heat dissipation efficiency of the transistor device 201.
[0050] It should be noted that, as Figure 2 As shown, the magnetic component 202 may include a magnetic bead or a magnetic ring, and its material may be ferrite. The magnetic component 202 may include one or more magnetic components, and each magnetic component 202 may be sleeved on the second electrode terminal N2 and the gate terminal M. This allows for better suppression of electromagnetic interference in the transistor device 201 without affecting its power consumption and efficiency.
[0051] Among some possible implementations, Figure 3 A schematic diagram of a specific structure of a transistor module provided in an embodiment of this application is shown. For example... Figure 2 and Figure 3 As shown, the transistor module 200 in this embodiment may further include a diode 205, which may be a freewheeling diode. The diode 205 may be connected in parallel with the transistor device 201 to reduce signal transients in the transistor device.
[0052] like Figure 2 and Figure 3As shown, the transistor device 201 can be a power semiconductor device, such as an insulated-gate bipolar transistor (IGBT) or a field-effect transistor (FET). These power semiconductor devices operate at extremely high switching speeds, switching thousands of times per second (kHz), with high-speed power devices reaching tens or even hundreds of kHz. This results in transient signals during frequent switching. The magnetic component 202, mounted on the gate terminal M and the second electrode terminal N2, can filter these transient signals, thereby reducing spikes in current and voltage (i.e., transient signals) in the transistor device 201 during frequent switching and protecting it.
[0053] In some implementations, such as Figure 2 and Figure 3 As shown, when the transistor device 201 in this embodiment includes a field-effect transistor, the first electrode terminal N1 is the drain terminal of the field-effect transistor, and the second electrode terminal N2 is the source terminal of the field-effect transistor. At this time, the magnetic element 202 is sleeved on the gate terminal and the source terminal of the field-effect transistor.
[0054] When the field-effect transistor is a metal-oxide-semiconductor field-effect transistor (MOSFET), according to the channel type, the field-effect transistor can include an N-channel field-effect transistor (hereinafter referred to as an NMOS transistor) or a P-channel field-effect transistor (hereinafter referred to as a PMOS transistor).
[0055] like Figure 2 and Figure 3 As shown, when the transistor device includes a PMOS transistor, the positive terminal of diode 205 can be electrically connected to the drain terminal of the PMOS transistor, and the negative terminal of diode 205 can be electrically connected to the source terminal of the PMOS transistor. In this case, a low-level voltage can be provided to the gate terminal of the PMOS transistor through the gate terminal. When the voltage Vgs between the gate terminal and the source terminal is less than or equal to the threshold voltage Vth1 of the PMOS transistor, the PMOS transistor turns on. At this time, the input signal can enter the PMOS transistor from the source terminal and then be output from the drain terminal.
[0056] like Figure 2 and Figure 3As shown, when the transistor device includes an NMOS transistor, the positive terminal of diode 205 is electrically connected to the source terminal of the NMOS transistor, and the negative terminal of diode 205 is electrically connected to the drain terminal of the NMOS transistor. At this time, a high-level voltage can be supplied to the gate terminal of the NMOS transistor through the gate terminal. When the voltage Vgs between the gate terminal and the source terminal is greater than or equal to the threshold voltage Vth2 of the NMOS transistor, the NMOS transistor turns on. At this time, the input signal enters the NMOS transistor from the drain terminal and is then output from the source terminal.
[0057] like Figure 2 and Figure 3 As shown, taking an NMOS transistor as an example, the transient signals generated by the NMOS transistor during the switching process and high-frequency switching process are filtered by magnetic components 202 on the gate and source terminals of the NMOS transistor. This prevents the radiated emission generated by the NMOS transistor during the switching process and improves the pass rate of electromagnetic interference measurement.
[0058] In other implementations, such as Figure 2 and Figure 3 As shown, when the transistor device 201 in this embodiment includes an insulated-gate bipolar transistor (IGBT), the collector terminal of the IGBT is the first electrode terminal N1, and the emitter terminal of the IGBT is the second electrode terminal N2. In this case, the magnetic element 202 is sleeved on the gate terminal and emitter terminal of the IGBT.
[0059] The aforementioned insulated gate bipolar transistor can be an N-channel insulated gate bipolar transistor (hereinafter referred to as an N-channel IGBT transistor) or a P-channel insulated gate bipolar transistor (hereinafter referred to as a P-channel IGBT transistor).
[0060] When the transistor device includes a P-channel IGBT transistor, the positive terminal of diode 205 can be electrically connected to the collector terminal of the P-channel IGBT transistor, and the negative terminal of diode 205 can be electrically connected to the emitter terminal of the N-channel IGBT transistor. In this case, by providing a low-level voltage to the P-channel IGBT transistor through the gate terminal, the input signal can enter the P-channel IGBT transistor from its emitter terminal and then exit from its emitter terminal.
[0061] like Figure 2 and Figure 3As shown, when the transistor device includes an N-channel IGBT transistor, the positive terminal of diode 205 can be electrically connected to the emitter terminal of the N-channel IGBT transistor, and the negative terminal of diode 205 can be electrically connected to the collector terminal of the N-channel IGBT transistor. In this case, a high-level voltage is provided to the N-channel IGBT transistor through the gate terminal, allowing the input signal to enter the N-channel IGBT transistor from the collector terminal and then exit from the emitter terminal.
[0062] like Figure 2 and Figure 3 As shown, taking an N-channel IGBT transistor as an example, an N-channel IGBT transistor can be considered as a circuit composed of an NMOS transistor and a PNP transistor. During the switching process and high-frequency switching process of an insulated-gate bipolar transistor (IGBT), transient signals are easily generated. These transient signals can be filtered using the magnetic component 202 sleeved on the gate and emitter terminals, thereby preventing radiated emissions generated by the N-channel IGBT transistor during switching and improving the throughput of electromagnetic interference measurements.
[0063] In some alternative methods, such as Figure 2 and Figure 3 As shown, the transistor module 200 may further include a drive module 206 electrically connected to the transistor device 201, which has a gate connection terminal, a first electrode connection terminal, and a second electrode connection terminal. The gate connection terminal of the drive module 206 is electrically connected to the gate terminal M of the transistor device, the first electrode connection terminal of the drive module 206 is electrically connected to the first electrode terminal N1 of the transistor device, and the second electrode connection terminal of the drive module 206 is electrically connected to the second electrode terminal N2 of the transistor device.
[0064] For example, such as Figure 2 and Figure 3 As shown, when there are multiple transistor devices 201, the gate connection terminal of the drive module 206 can be electrically connected to the gate terminal M of multiple transistor devices, the first electrode connection terminal of the drive module 206 is electrically connected to the first electrode terminal N1 of multiple transistor devices, and the second electrode connection terminal of the drive module 206 is electrically connected to the second electrode terminal N2 of multiple transistor devices.
[0065] In practical applications, such as Figure 2 and Figure 3As shown, the driving module 206 may further include multiple drivers 2060, each driver 2060 corresponding to a transistor device 201, so that each driver 2060 can control the corresponding transistor device 201 to be turned on or off. The gate connection terminal of each driver 2060 is electrically connected to the gate terminal M of the corresponding transistor device, the first electrode connection terminal of each driver 2060 is electrically connected to the first electrode terminal N1 of the corresponding transistor device, and the second electrode connection terminal of each driver 2060 is electrically connected to the second electrode terminal N2 of the corresponding transistor device.
[0066] It should be noted that, as Figure 2 and Figure 3 As shown, the drive module 206 includes two drivers 2060, each driver 2060 being electrically connected to a corresponding transistor device 201. However, in practice, there may be fewer or more drivers 2060 and transistor devices 201. Furthermore, the transistor module 200 in this embodiment may also include a power supply 207 for supplying power to the two transistor devices 201.
[0067] like Figure 2 and Figure 3 As shown, when there are multiple transistor devices 201, these transistor devices 201 can be connected in series, in parallel, or partially in series and partially in parallel. For example, Figure 3 The transistor module 200 shown includes a half-bridge circuit formed by two transistor devices 201 connected in series, with the connection node of the two transistor devices 201 being the output terminal of the half-bridge circuit.
[0068] like Figure 2 and Figure 3 As shown, during the high-frequency switching process of transistor device 201, the midpoint to ground forms a major common-mode noise source. This common-mode noise source drives common-mode current to flow through the gate terminal M and the second electrode terminal N2 of the transistor device. Since the magnetic component 202 is sleeved on the gate terminal M and the second electrode terminal N2, the magnetic component 202 can filter the common-mode current of the gate terminal M and the second electrode terminal N2, thereby suppressing the radiated emission of transistor device 201 caused by the common-mode current, and enabling transistor device 201 to operate with high efficiency at low power consumption.
[0069] To clearly explain the electromagnetic interference suppression principle of the IGBT transistors in the embodiments of this application, Figure 4A A schematic diagram of the equivalent circuit structure of the IGBT module disclosed in an embodiment of this application is shown. Figure 4AAs shown, the IGBT module 400 disclosed in this application embodiment can be an IGBT half-bridge circuit, which may include a first driver 401A, a second driver 401B, a first N-channel IGBT transistor 402A and a second N-channel IGBT transistor 402B, a first freewheeling diode 403A and a second freewheeling diode 403B, and a power supply 404 for supplying power to the first N-channel IGBT transistor 402A and the second N-channel IGBT transistor 402B.
[0070] like Figure 4A As shown, the first driver 401A is electrically connected to the gate terminal G1, the collector terminal C1, and the emitter terminal E1 of the first N-channel IGBT transistor, respectively, so as to control the first N-channel IGBT transistor 402A to turn on and off.
[0071] like Figure 4A As shown, the second driver 401B is electrically connected to the gate terminal G2, the collector terminal C2, and the emitter terminal E2 of the second N-channel IGBT transistor, respectively, so as to control the second N-channel IGBT transistor 402B to turn on and off.
[0072] like Figure 4A As shown, the collector terminal C1 of the first N-channel IGBT transistor is electrically connected to the positive terminal of the power supply 404, the emitter terminal E1 of the first N-channel IGBT transistor is electrically connected to the collector terminal C2 of the second N-channel IGBT transistor, and the emitter terminal E2 of the second N-channel IGBT transistor and the negative terminal of the power supply 404 are both grounded.
[0073] like Figure 4A As shown, the emitter terminal E1 of the first N-channel IGBT transistor is electrically connected to the positive terminal of the first freewheeling diode 403A, and the negative terminal of the first freewheeling diode 403A is electrically connected to the collector terminal C1 of the first N-channel IGBT transistor, so as to suppress voltage and current surges of the first N-channel IGBT transistor 402A using the first freewheeling diode 403A; the emitter terminal E2 of the second N-channel IGBT transistor is electrically connected to the positive terminal of the second freewheeling diode 403B, and the negative terminal of the second freewheeling diode 403B is electrically connected to the collector terminal C2 of the second N-channel IGBT transistor, so as to suppress voltage and current surges of the second N-channel IGBT transistor 402B using the second freewheeling diode 403B.
[0074] In specific implementation, such as Figure 4AAs shown, when a DC signal is input to the collector terminal C1 of the first N-channel IGBT transistor, the first N-channel IGBT transistor 402A and the second N-channel IGBT transistor 402B can be alternately turned on, so that the signal output by the output terminal of the half-bridge circuit exhibits a regular change, thereby converting the DC signal into an AC signal.
[0075] like Figure 4A As shown, the gate terminal G1 and emitter terminal E1 of the first N-channel IGBT transistor are fitted with a first magnetic ring 405A, and the gate terminal G2 and emitter terminal E2 of the second N-channel IGBT transistor are fitted with a second magnetic ring 405B. The electromagnetic interference suppression principle of the IGBT module 400 is explained below using the first N-channel IGBT transistor as an example.
[0076] Figure 4B A schematic diagram illustrating the electromagnetic interference suppression principle of the IGBT module disclosed in this application is shown. Figure 4B In the middle, L 11 L 12 L 21 L 22 L 31 L 32 L 42 L 51 L 52 L 61 L 62 L 71 L7 represents the inductance distribution parameters of the equivalent circuit of the IGBT module, and C... 11 C 12 C 21 C 22 C 31 C 32 C 41 and C 42 for Figure 4A The capacitance distribution parameters of the equivalent circuit of the IGBT module 400 shown are given. Furthermore, besides L... 11 and L 12 Other inductance and capacitance distributed parameters are all Figure 4A The internal parameters of the IGBT module 400 shown are basically unaffected by the operating state.
[0077] like Figure 4B As shown, the first N-channel IGBT transistor 402A and the second N-channel IGBT transistor 402B can form an IGBT half-bridge circuit (i.e., a pair of transistors). Figure 4A During the high-frequency switching process of the IGBT module 400 shown, Figure 4AThe output terminal (midpoint of the transistor) of the IGBT module 400 shown forms the main common-mode noise source Vs to ground. Taking the first N-channel IGBT transistor 402A as an example, the common-mode noise source Vs can generate this high-frequency changing voltage (dV / dt). Furthermore, this common-mode noise source Vs drives the first common-mode current I. cm1 according to Figure 4B The dashed line I in the diagram enters the first driver 401A through the emitter terminal E1 of the first N-channel IGBT transistor. At the same time, the common-mode noise source Vs drives the second common-mode current I. cm2 according to Figure 4B The dashed line II in the diagram enters the first driver 401A through the gate terminal G1 of the first N-channel IGBT transistor. If the first magnetic ring 405A is not fitted on the gate terminal G1 and the emitter terminal E1 of the first N-channel IGBT transistor, the first driver 401A will exhibit radiated emission EM.
[0078] like Figure 4B As shown, a first magnetic ring 405A is fitted onto the gate terminal G1 and the emitter terminal E1 of the first N-channel IGBT transistor. The first magnetic ring 405A can control the first common-mode current I through electromagnetic induction. cm1 and the first common-mode current I cm1 Filtering is performed to reduce radiated emissions (EM) from the first driver 401A. Furthermore, the first magnetic ring 405A does not establish an electrical connection with the gate terminal G1 and emitter terminal E1 of the first N-channel IGBT transistor, thus not increasing the drive resistance of the first N-channel IGBT transistor 402A. This ensures that the first N-channel IGBT transistor 402A operates with high efficiency at low power consumption.
[0079] The inventor discovered that, as Figure 4B As shown, the drive current I of the first N-channel IGBT transistor 402A is... ge refer to Figure 4B The dashed line III in the diagram can enter the first driver 401A through the gate terminal G1 and emitter terminal E1 of the first N-channel IGBT transistor. During this process, the drive current I flowing through the gate terminal G1 and emitter terminal E1 of the first N-channel IGBT transistor... ge The directions are opposite, and the sizes are equal. However, since the first magnetic ring 405A is sleeved on the emitter terminal E1 and the gate terminal G1 of the first N-channel IGBT transistor, the drive current I of the emitter terminal E1 of the first N-channel IGBT transistor is...ge A first ring current is generated on the first magnetic ring 405A through electromagnetic induction, which drives the gate terminal G1 of the first N-channel IGBT transistor to a current I. ge A second induced current is generated on the first magnetic ring 405A through electromagnetic induction. Since the magnitude of the first ring current is equal to the magnitude of the second ring current but opposite in direction, they can cancel each other out. Therefore, the drive current I flowing through the gate terminal G1 and emitter terminal E1 of the first N-channel IGBT transistor... ge Unaffected by the magnetic ring, the first N-channel IGBT transistor 402A can be guaranteed to work normally.
[0080] Furthermore, if the first magnetic ring 405A connects the emitter terminal E1, collector terminal C1, and gate terminal G1 of the first N-channel IGBT transistor, the vector sum of the currents at the emitter terminal E1, collector terminal C1, and gate terminal G1 of the first N-channel IGBT transistor is not zero. This is equivalent to adding a differential-mode inductance L to the collector terminal C1 of the first N-channel IGBT transistor. dm The differential mode inductor L dm This will cause a voltage spike V on the collector terminal C1 of the first N-channel IGBT transistor. peak This can cause other forms of radiation.
[0081] EMI tests were performed on the IGBT module and its comparative example according to EN 55022, and the test results are as follows. Figure 5A and Figure 5B As shown. Among them, Figure 5A This paper presents a schematic diagram illustrating the EMI test results of a comparative example of an IGBT module disclosed in an embodiment of this application. Figure 5B A schematic diagram illustrating the EMI test results of the IGBT module disclosed in an embodiment of this application is shown. Figure 5A and Figure 5B In the diagram, 'a' represents the Class A limit for EMI testing, 'b' represents the Class B limit for EMI testing, and 'c' represents the actual test result for EMI testing.
[0082] In the IGBT module comparative example of this application, the gate terminal and emitter terminal of the first N-channel IGBT transistor are not fitted with a first magnetic ring, and the gate terminal and emitter terminal of the second N-channel IGBT transistor are not fitted with a second magnetic ring. For example... Figure 5AAs shown, in the EMI test results of the IGBT module in the embodiment of this application, a peak electric field strength of 46.51 dBμV / m appeared at 187.4591 MHz, which is significantly higher than the Class A limit.
[0083] like Figure 5B As shown, in the EMI test results of the IGBT module in this application embodiment, a peak electric field strength of 41.85 dBμV / m appeared at 185.511022 MHz, which is significantly lower than the Class A limit.
[0084] contrast Figure 5A and Figure 5B It can be observed that in the IGBT module, the gate terminal G1 of the first N-channel IGBT and the emitter terminal E1 of the first N-channel IGBT transistor are fitted with a first magnetic ring 405A, which can ensure that the EMI test of the device containing the IGBT module 400 is passed without affecting the power consumption and efficiency of the first N-channel IGBT transistor 402A.
[0085] It should be noted that when an IGBT module includes two or more N-channel IGBTs, magnetic components such as magnetic rings or beads can be fitted onto the gate and emitter terminals of each N-channel IGBT. The working principle is as follows: Figure 4B Additionally, when the IGBT module includes P-channel IGBTs, magnetic rings, beads, and other magnetic components are still fitted onto the gate and emitter terminals of each P-channel IGBT. The operating principle is similar to that of N-channel IGBTs, and will not be elaborated upon here.
[0086] Although embodiments of this application have been described in conjunction with specific features and examples, it is obvious that various modifications and combinations can be made thereto without departing from the spirit and scope of the embodiments of this application. Accordingly, this specification and drawings are merely exemplary illustrations of the embodiments of this application as defined by the appended claims, and are considered to cover any and all modifications, variations, combinations, or equivalents within the scope of the embodiments of this application. Obviously, those skilled in the art can make various modifications and variations to the embodiments of this application without departing from the spirit and scope of the embodiments of this application. Thus, if these modifications and variations of the embodiments of this application fall within the scope of the claims of the embodiments of this application and their equivalents, then the embodiments of this application are also intended to include these modifications and variations.
Claims
1. A transistor module, characterized in that, The device includes a transistor device and a magnetic component. The transistor device has a gate terminal, a first electrode terminal, and a second electrode terminal. The magnetic component is sleeved on the gate terminal and the second electrode terminal. When the transistor device is turned on, the voltage between the gate terminal and the second electrode terminal satisfies the threshold voltage of the transistor device.
2. The transistor module according to claim 1, characterized in that, The transistor device includes an insulated-gate bipolar transistor (IGBT), wherein the collector terminal of the IGBT is the first electrode terminal, and the emitter terminal of the IGBT is the second electrode terminal.
3. The transistor module according to claim 2, characterized in that, The insulated gate bipolar transistor includes an N-channel insulated gate bipolar transistor or a P-channel insulated gate bipolar transistor.
4. The transistor module according to claim 1, characterized in that, The transistor device includes a field-effect transistor, wherein the first electrode terminal is the drain terminal of the field-effect transistor, and the second electrode terminal is the source terminal of the field-effect transistor.
5. The transistor module according to claim 4, characterized in that, The field-effect transistor is an N-channel field-effect transistor or a P-channel field-effect transistor.
6. The transistor module according to claim 1, characterized in that, The transistor module includes a half-bridge circuit formed by two transistor devices connected in series, and the connection node between the two transistor devices is the output terminal of the half-bridge circuit.
7. The transistor module according to any one of claims 1 to 6, characterized in that, The transistor module further includes a first insulating member and a second insulating member, the first insulating member being disposed on the surface of the gate terminal and the second insulating member being disposed on the surface of the second electrode terminal.
8. The transistor module according to any one of claims 1 to 6, characterized in that, The transistor module further includes a packaging structure, the transistor device is disposed inside the packaging structure, the end of the gate terminal, the end of the first electrode terminal and the end of the second electrode terminal pass through the outside of the packaging structure, and the magnetic element is sleeved on the end of the gate terminal and the end of the second electrode terminal.
9. The transistor module according to any one of claims 1 to 6, characterized in that, The magnetic component includes multiple magnetic components, and the multiple magnetic component sleeves are all disposed on the second electrode terminal and the gate terminal; wherein, the magnetic component includes a magnetic ring or a magnetic bead.
10. An electronic device, characterized in that, The device includes the transistor module and load as described in any one of claims 1 to 9, wherein the output terminal of the transistor module is electrically connected to the load.