Solar energy comprehensive utilization system and photo-thermal power station with same

Abstract

The utility model provides a solar energy comprehensive utilization system and a photo-thermal power station with the same. The utility model relates to a solar energy comprehensive utilization system, which comprises a semitransparent photovoltaic cell, a photo-thermal reflecting mirror, a spectrum frequency divider, a non-transparent photovoltaic cell and a photo-thermal heat collector, the photo-thermal reflector is located below the semitransparent photovoltaic cell and reflects the residual spectrum which is not absorbed by the semitransparent photovoltaic cell, the spectrum frequency divider divides near-infrared light with the wavelength of 800-1200 nm and far-infrared light with the wavelength larger than 1200 nm in the residual spectrum to the opaque photovoltaic cell and the photo-thermal heat collector respectively, and the opaque photovoltaic cell conducts photovoltaic power generation through the near-infrared light. And the photo-thermal heat collector utilizes far infrared light to carry out photo-thermal power generation. The system is high in comprehensive utilization efficiency of solar energy, and can be widely applied to tower type, groove type, disc type, Fresnel type and other photo-thermal power stations.

Description

TECHNICAL FIELD

[0001] The utility model relates to solar energy utilization technical field especially is related to a solar comprehensive utilization system and the photothermal power station with the system. BACKGROUND

[0002] Solar energy utilization modes mainly include photovoltaic power generation and photothermal power generation. Photovoltaic power generation is to convert light energy into electric energy directly by using the photovoltaic effect of the semiconductor interface, which has the advantages of safety and reliability, short construction period, etc. However, due to the band gap limitation of materials and temperature effect, the energy conversion efficiency of photovoltaic technology is generally low. Photothermal power generation is to convert sunlight into heat energy through a heat collector, which has the advantages of stable power output, flexible energy storage, and adaptability to large-scale grid regulation, but the initial construction cost is high, and it is highly dependent on the area with concentrated light resources. At present, single photovoltaic or photothermal system cannot cover the entire solar spectrum, and part of the light cannot be fully utilized, so the solar comprehensive utilization efficiency is low.

[0003] In order to further improve the solar comprehensive utilization efficiency, photovoltaic power generation and photothermal power generation technology can be combined to fully utilize the wide spectrum of sunlight. However, the existing photovoltaic-photothermal coupling mode cannot accurately guide different wavebands of sunlight to the corresponding power generation components, which limits the light energy utilization rate and system performance. In addition, the combination of photovoltaic cells and photothermal reflectors has great limitations, and lacks flexible structural design to adapt to different light path requirements, so it cannot optimize the synergy between the two, resulting in limited improvement of solar comprehensive utilization efficiency.

[0004] Therefore, the utility model is provided. CONTENT OF THE UTILITY MODEL

[0005] The utility model aims at providing a solar comprehensive utilization system and a photothermal power station with the system, which has high solar comprehensive utilization efficiency and can be widely applied to tower type, trough type, dish type, and Fresnel type photothermal power stations.

[0006] The utility model provides a solar comprehensive utilization system, which comprises a semi-transparent photovoltaic cell, a photothermal reflector, a spectrum divider, an opaque photovoltaic cell, and a photothermal heat collector. The semi-transparent photovoltaic cell absorbs ultraviolet light and visible light in the 200-800 nm spectrum of sunlight. The photothermal reflector is located below the semi-transparent photovoltaic cell and reflects the remaining spectrum that is not absorbed by the semi-transparent photovoltaic cell. The spectrum divider divides the near-infrared light in the 800-1200 nm spectrum and the far-infrared light greater than 1200 nm in the remaining spectrum to the opaque photovoltaic cell and the photothermal heat collector, respectively. The opaque photovoltaic cell utilizes near-infrared light for photovoltaic power generation, and the photothermal heat collector utilizes far-infrared light for photothermal power generation.

[0007] Further, the semi-transparent photovoltaic cell is sequentially provided with a substrate, a first transparent conductive layer, a first transport layer, a light absorption layer, a second transport layer, a second transparent conductive layer and an encapsulation layer from bottom to top; wherein the first transport layer and the second transport layer are a hole transport layer or an electron transport layer.

[0008] Further, the light-heat reflector comprises a metal coating layer and a dielectric stack arranged on the surface of the metal coating layer, and the dielectric stack comprises a plurality of layers of silicon dioxide and titanium dioxide alternately stacked.

[0009] Further, the single-layer thickness of the silicon dioxide layer is 50-200nm, and the number of layers is 3-8 layers; the single-layer thickness of the titanium dioxide layer is 30-120nm, and the number of layers is 3-8 layers.

[0010] Further, the spectral frequency divider comprises a substrate and a dielectric film layer arranged on the surface of the substrate, and the dielectric film layer comprises a plurality of layers of high refractive index material and low refractive index material alternately stacked.

[0011] Further, the single-layer thickness of the high refractive index material layer is 30-300nm, and the number of layers is 5-25 layers; the single-layer thickness of the low refractive index material layer is 50-500nm, and the number of layers is 5-25 layers.

[0012] Further, the opaque photovoltaic cell comprises a substrate and a surface passivation layer arranged on the surface of the substrate.

[0013] Further, the semi-transparent photovoltaic cell is coupled to the surface of the light-heat reflector to form a laminated structure, the spectral frequency divider is arranged at the front end of the laminated structure, the opaque photovoltaic cell is arranged at the focal position of the near-infrared light reflected by the spectral frequency divider, and the light-heat collector is arranged at the focal position of the far-infrared light transmitted by the spectral frequency divider.

[0014] Further, an angle adjusting support is arranged at the bottom of the laminated structure and / or the opaque photovoltaic cell.

[0015] The utility model further provides a kind of light-heat power station, be equipped with above-mentioned solar comprehensive utilization system, and light-heat power station is tower type light-heat power station, trough type light-heat power station, dish type light-heat power station or Fresnel type light-heat power station.

[0016] The solar comprehensive utilization system couples semi-transparent photovoltaic cells, light-heat reflectors, spectrum frequency dividers, non-transparent photovoltaic cells and light-heat collectors, ultraviolet light and visible light in the range of 200-800nm in the sunlight spectrum are absorbed by the semi-transparent photovoltaic cells, photoelectric conversion efficiency can reach 18-22%, at the same time, the remaining spectrum of 800-1200nm in near-infrared light which is not absorbed is guided to the non-transparent photovoltaic cells for photovoltaic power generation, photoelectric conversion efficiency can reach 20-25%, far-infrared light greater than 1200nm is guided to the light-heat collector for photo-thermal power generation, photo-thermal conversion efficiency can reach 70-80%, the whole solar comprehensive utilization system realizes the maximized utilization of different waveband energy of sunlight through the separation design of photovoltaic and photo-thermal, reduces the loss caused by spectral overlap, and improves the solar comprehensive utilization efficiency to 60-67%, far more than a single photovoltaic or photo-thermal system.

[0017] The separation efficiency of the spectrum frequency divider in the solar comprehensive utilization system is as high as 85% or more for the target wavelength range, the light energy distribution precision is significantly improved, the system is applicable to tower type, trough type, dish type, Fresnel type and the like, the system volume and light loss can be reduced, and the adaptability is high; in addition, the bracket design allows dynamic adjustment of the component angle, so that the light incidence angle is always in the best state, and the light energy utilization rate can be further improved by about 5-10% in high-sunlight areas. Under the same area condition, the power generation capacity of the solar comprehensive utilization system is improved by 20-40% than that of a single photovoltaic system, the additional land resources and equipment investment required by the separate construction of the photo-thermal and photovoltaic systems are reduced, 50 tons of carbon dioxide emissions per year (based on 1MW installed capacity) can be reduced, and the sustainable development demand of green energy is met. BRIEF DESCRIPTION OF DRAWINGS

[0018] In order to more clearly illustrate the specific embodiments of the present application or the technical solutions in the prior art, the drawings needed in the specific embodiments or the prior art description will be briefly introduced as follows. Obviously, the drawings in the following description are some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0019] Figure 1 It is a side view of the solar comprehensive utilization system.

[0020] Figure 2 It is a top view of the solar comprehensive utilization system.

[0021] EXPLANATION OF REFERENCE NUMERALS:

[0022] 1: translucent photovoltaic cell; 2: light-heat reflector; 3: light spectrum frequency divider; 4: opaque photovoltaic cell; 5: light-heat collector; 6, 7: support; 8: sunlight; 9: infrared light; 10: near-infrared light; 11: far-infrared light; 12: laminated structure. DETAILED DESCRIPTION

[0023] It should be noted that the following detailed description is exemplary in nature and is intended to provide further description of the application. Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.

[0024] It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments in accordance with the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising," when used in this specification, specify the presence of stated features, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and / or groups thereof.

[0025] The technical solutions of the present application will be described clearly and completely in connection with the embodiments. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.

[0026] Embodiment 1

[0027] In combination with FIG. 1, Figure 1 , Figure 2 As shown in the figure, the solar comprehensive utilization system of the present embodiment comprises a translucent photovoltaic cell 1, a light-heat reflector 2, a light spectrum frequency divider 3, an opaque photovoltaic cell 4 and a light-heat collector 5. The translucent photovoltaic cell 1 absorbs ultraviolet light and visible light of 200-800 nm in the sunlight 8. The light-heat reflector 2 is located below the translucent photovoltaic cell 1 and reflects the remaining spectrum (infrared light 9) that is not absorbed by the translucent photovoltaic cell 1. The light spectrum frequency divider 3 divides the near-infrared light 10 of 800-1200 nm and the far-infrared light 11 greater than 1200 nm in the remaining spectrum to the opaque photovoltaic cell 4 and the light-heat collector 5, respectively. The opaque photovoltaic cell 4 utilizes the near-infrared light 10 for photovoltaic power generation, and the light-heat collector 5 utilizes the far-infrared light 11 for light-heat power generation.

[0028] The semi-transparent photovoltaic cell 1 is sequentially provided with a substrate, a first transparent conductive layer, a first transport layer, a light absorption layer, a second transport layer, a second transparent conductive layer and an encapsulation layer from bottom to top, and the first transport layer and the second transport layer are a hole transport layer or an electron transport layer. In this embodiment, the semi-transparent photovoltaic cell 1 is sequentially provided with a substrate, a first transparent conductive layer, a hole transport layer, a light absorption layer, an electron transport layer, a second transparent conductive layer and an encapsulation layer from bottom to top.

[0029] Specifically, the substrate can adopt a flexible substrate or a high-transparency rigid glass; the thickness of the substrate can be 0.1-2 mm, for example, 0.2-2 mm. In this embodiment, the substrate adopts a high-transparency flexible substrate with a thickness of 0.2 mm.

[0030] The transparent conductive layer can adopt ATO (antimony tin oxide), ITO (indium tin oxide) and the like, and be prepared by radio frequency magnetron sputtering and the like; the thickness of the transparent conductive layer can be 50-300 nm, for example, 150-300 nm, and the transmittance of the transparent conductive layer is higher than 90%. In this embodiment, ITO (indium tin oxide) is deposited by radio frequency magnetron sputtering, and then heat-treated at 150°C for 10 min, to obtain the first transparent conductive layer and the second transparent conductive layer with a thickness of 150 nm and a transmittance higher than 90%.

[0031] The light absorption layer can adopt a perovskite layer based on perovskite, for example, methylammonium lead iodide MAPbI3, methylammonium lead bromide (MAPbBr3), CsFA-MAPb(Br x I 1-x )3 and the like, and be prepared by solution spin coating, vacuum co-evaporation, doctor blade coating and the like; the thickness of the light absorption layer can be 300-700 nm, for example, 500-700 nm; in addition, surface passivation technology (such as long-chain amine salt passivation) can be combined to achieve high photoelectric conversion efficiency and transmittance. In this embodiment, perovskite precursor solution is coated on the hole transport layer by solution spin coating, and a uniform MAPbI3 perovskite film is formed by wet chemical deposition, and then annealed at 100°C for 30 min, to obtain the light absorption layer with a thickness of 500 nm.

[0032] The electron transport layer can adopt [6,6]-phenyl-C 61 butyric acid methyl ester (C60), SnO2, TiO2 and the like, and be prepared by sol-gel method, vacuum evaporation and the like; the thickness of the electron transport layer can be 20-100 nm, for example, 30-100 nm. In this embodiment, [6,6]-phenyl-C 61 butyric acid methyl ester (C60) is deposited on the light absorption layer by solution spin coating, and then annealed at 70°C for 10 min, to obtain the electron transport layer with a thickness of 30 nm.

[0033] The hole transport layer can be made of polymer materials such as PEDOT:PSS (poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate), P3HT (poly(3-hexylthiophene)), organic small molecule materials such as Spiro-OMeTAD (2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene), PTAA (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]), and inorganic materials such as NiOx and CuSCN, prepared by sol-gel method, vacuum evaporation, etc. The thickness of the hole transport layer can be 20-100 nm, for example, 40-100 nm. In this embodiment, poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate is deposited on the first transparent conductive layer by solution spin coating method, followed by annealing treatment at 80°C for 10 min, to obtain a hole transport layer with a thickness of 40 nm.

[0034] The encapsulation layer can be made of flexible high-transmittance polymer such as PEVA, PET, PI, etc., and the encapsulation is completed by vacuum lamination process. The thickness of the encapsulation layer can be 10-9000 μm, for example, 250-500 μm. The encapsulation layer is mainly used to ensure environmental stability and mechanical flexibility. In this embodiment, ethylene-vinyl acetate (PEVA) is hot-pressed on the surface of the second transparent conductive layer in vacuum by lamination process, hot-pressed at 120°C for 10 min, to obtain an encapsulation layer with a thickness of 200 μm.

[0035] The semi-transparent photovoltaic cell 1 of this embodiment has an absorption rate of 90% for ultraviolet light and visible light in the 200-800 nm waveband, and a transmission rate of 90% for infrared light greater than 800 nm.

[0036] The light-heat reflecting mirror 2 comprises a metal coating and a dielectric stack arranged on the surface of the metal coating. The metal coating can be made of high-reflectivity metal such as silver and aluminum, prepared by magnetron sputtering or evaporation process. The thickness of the metal coating is 100-300 nm. In this embodiment, a reflecting surface with uniform curvature is made by high-precision molding technology, with a surface roughness (Ra) less than 10 nm. Then, a silver thin film is uniformly deposited on the reflecting surface by vacuum evaporation process, to form a metal coating with a thickness of 100 nm.

[0037] The medium stack includes multiple layers of alternately stacked silicon dioxide layers and titanium dioxide layers, which can be deposited by electron beam evaporation or sputtering method. The single-layer thickness of the silicon dioxide layer can be 50-200 nm, and the number of layers can be 3-8. The single-layer thickness of the titanium dioxide layer can be 30-120 nm, and the number of layers can be 3-8. In this embodiment, the silicon dioxide layers and the titanium dioxide layers are alternately deposited on the surface of the metal coating by chemical vapor deposition method. The single-layer thickness of the silicon dioxide layer is 50 nm, and the number of layers is 8. The single-layer thickness of the titanium dioxide layer is 30 nm, and the number of layers is 8. Thus, the medium stack with a reflection peak at 800-1200 nm is obtained.

[0038] The reflectivity of the photothermal mirror 2 of this embodiment to the near-infrared light 10 at 800-1200 nm and the far-infrared light 11 greater than 1200 nm is 96%.

[0039] The spectral frequency divider 3 is mainly used for accurately dividing the near-infrared light 10 at 800-1200 nm and the far-infrared light 11 greater than 1200 nm in the remaining spectrum to realize spectral separation, so as to reflect the near-infrared light 10 to the opaque photovoltaic cell 4 for photovoltaic power generation, and transmit the far-infrared light 11 to the photothermal heat collector 5 for photothermal utilization.

[0040] The spectral frequency divider 3 includes a substrate and a medium film layer arranged on the surface of the substrate. The substrate can be made of high-temperature-resistant quartz glass or borosilicate glass. In this embodiment, the substrate is made of high-temperature-resistant quartz glass.

[0041] The medium film layer includes multiple layers of alternately stacked high-refractive-index material layers and low-refractive-index material layers. The high-refractive-index material layer can be made of a TiO2 layer and / or a Ta2O5 layer. The single-layer thickness of the high-refractive-index material layer can be 30-300 nm, and the number of layers can be 5-25. The low-refractive-index material layer can be made of a SiO2 layer and / or a MgF2 layer. The single-layer thickness of the low-refractive-index material layer can be 50-500 nm, and the number of layers can be 5-25. In this embodiment, the Ta2O5 layers and the MgF2 layers are alternately deposited on the substrate by electron beam evaporation method. The single-layer thickness of the Ta2O5 layer is 30 nm, and the number of layers is 25. The single-layer thickness of the MgF2 layer is 50 nm, and the number of layers is 25. Thus, the medium film layer with a reflection peak at 400-750 nm is obtained.

[0042] The reflectivity of the spectral frequency divider 3 of this embodiment to the near-infrared light 10 at 800-1200 nm is 90%, and the transmittance to the far-infrared light 11 greater than 1200 nm is 85%.

[0043] The opaque photovoltaic cell 4 is mainly used for absorbing the near-infrared light 10 of 800-1200 nm for photovoltaic power generation, and can adopt materials such as crystalline silicon cells and GaAs cells. Specifically, the opaque photovoltaic cell 4 includes a substrate and a surface passivation layer arranged on the surface of the substrate; the substrate can adopt a high-efficiency crystalline silicon cell (PERC, TOPCon, etc.), and the efficiency is more than 23%; the surface passivation layer can adopt hydrogenated silicon oxide (SiOx:H), which is prepared by a plasma enhanced chemical vapor deposition (PECVD) process, and the thickness of the surface passivation layer can be 5-15 nm, and the thickness of the surface passivation layer in the embodiment is 10 nm.

[0044] The light-heat collector 5 is mainly used for absorbing far-infrared light 11 greater than 1200 nm for light-heat power generation, and can adopt a conventional light-heat collector in the art.

[0045] The coupling mode of each component is as follows:

[0046] Firstly, the translucent photovoltaic cell 1 is attached to the surface of the light-heat reflector 2 by using the adhesive method to form a laminated structure 12 of the translucent photovoltaic cell 1 and the light-heat reflector 2; then, the spectrum divider 3 is arranged at the front end of the laminated structure 12, and the opaque photovoltaic cell 4 and the light-heat collector 5 are arranged at the focal position of the near-infrared light 10 reflected by the spectrum divider 3 and the focal position of the far-infrared light 11 transmitted by the spectrum divider 3, respectively. Further, the laminated structure 12 and the opaque photovoltaic cell 4 are set to be angle-adjustable, the laminated structure 12 of the translucent photovoltaic cell 1 and the light-heat reflector 2 is angle-adjusted by the bracket 6 arranged at the bottom, and the opaque photovoltaic cell 4 is angle-adjusted by the bracket 7 arranged at the bottom,

[0047] The working principle of the solar comprehensive utilization system in the embodiment is as follows:

[0048] The sunlight 8 first passes through the semi-transparent photovoltaic cell 1, the light in the 200-800 nm band in the sunlight 8 is absorbed by the semi-transparent photovoltaic cell 1 and converted into electrical energy, the unabsorbed light (mainly including near-infrared light 10 of 800-1200 nm and infrared light of >1200 nm) is transmitted to the light-heat reflector 2, the light-heat reflector 2 reflects the near-infrared light 10 to the opaque photovoltaic cell 4, the opaque photovoltaic cell 4 completes the photoelectric conversion of the near-infrared light 10, and the light-heat reflector 2 simultaneously transmits the far-infrared light 11 to the downstream light-heat collector 5, and the thermal energy of the far-infrared light 11 is used for light-heat power generation. The above-mentioned solar energy comprehensive utilization system utilizes photovoltaic and light-heat cooperative power generation, the semi-transparent photovoltaic cell 1 processes short-wave light, the opaque photovoltaic cell 4 is responsible for middle-wave light, and the light-heat reflector 2 guides long-wave light to the light-heat collector 5, forming an efficient spectral partition utilization system, so that the full-band energy of the sunlight 8 can be effectively utilized, the overall energy conversion efficiency is maximized, and the solar energy comprehensive utilization system can be applied to tower type, trough type, dish type, Fresnel type and other light-heat power stations, and customized design solutions are provided for different scenes.

[0049] In the solar energy comprehensive utilization system of the embodiment, the photoelectric conversion efficiency of the semi-transparent photovoltaic cell 1 is 20%, the photoelectric conversion efficiency of the opaque photovoltaic cell 4 is 25%, the light-heat conversion efficiency of the light-heat collector 5 is 80%, and the solar energy comprehensive utilization efficiency of the entire coupling system is 67%.

[0050] Embodiment 2

[0051] In this embodiment, the semi-transparent photovoltaic cell of embodiment 1 is optimized, and the optimization method is as follows:

[0052] In order to enhance the spectral selectivity, quantum dots or photosensitive materials are introduced into the perovskite layer to realize selective absorption and transmission of light in a specific wave band; specifically, the ultraviolet light and visible light in the 200-800 nm band are optimized to be absorbed, and the transmission of the 800-1200 nm band is enhanced, so as to improve the photoelectric conversion efficiency of the photovoltaic cell and provide sufficient infrared light for the light-heat component in the photovoltaic and light-heat integrated system.

[0053] By introducing quantum dots or photosensitive materials to form a composite material with perovskite, the optical properties of different materials in different wave bands are fully utilized to improve the utilization efficiency of the entire spectral range; both the photoelectric conversion efficiency of the photovoltaic cell and the transmittance of the unabsorbed spectrum are maximized, so that the light-heat component can receive sufficient infrared light, and the efficient energy utilization of the photovoltaic and light-heat integrated system is realized.

[0054] The perovskite material of the perovskite layer can be selected from perovskite materials with suitable band gap and photoelectric properties, such as a band gap ranging from 1.65 eV to 2.30 eV, to ensure better absorption performance in the visible light range; the quantum dot material can be selected from quantum dots such as CdSe and PbS, which have small size and quantum confinement effect, and can enhance light absorption in a specific waveband; and the photosensitive material can be an organic photosensitive dye with high light absorption coefficient and good stability.

[0055] Through the above optimization mode, the effective application of the enhanced spectral selectivity design in the photovoltaic and photo-thermal integrated system can be realized, and the energy comprehensive utilization efficiency is improved.

[0056] In this embodiment, a precursor solution containing Cd ions and Se ions (concentration of 0.5 mol / L) is placed in a high-pressure reaction kettle, and reacted at a temperature of 150 DEG C and a pressure of 15 MPa for 2 h to prepare CdSe quantum dots with a size of about 5 nm.

[0057] The CdSe quantum dots prepared above are dispersed in a solvent, and then mixed uniformly with the perovskite precursor solution of Example 1 to prepare a mixed solution. The mixed solution is coated on the hole transport layer by using a solution spin coating method, and a uniform quantum dot-perovskite film (CdSe-MAPbI3) is formed by wet chemical deposition, and then annealed at 100 DEG C for 30 min to prepare a 500 nm light absorption layer, and the content of CdSe quantum dots in the light absorption layer is 3.5 wt%.

[0058] It is detected that the semi-transparent photovoltaic cell provided with the perovskite layer of this embodiment introducing quantum dots has an absorption rate of 93% for ultraviolet light and visible light in the waveband of 200-800 nm, and a transmission of 95% for infrared light greater than 800 nm, and the photoelectric conversion efficiency of the semi-transparent photovoltaic cell is 22%.

[0059] Comparative Example 1

[0060] This comparative example is basically the same as Example 1 except that no spectral frequency divider is provided.

[0061] It is detected that the solar energy comprehensive utilization efficiency of the solar energy comprehensive utilization system of this comparative example is only 50%.

[0062] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, but not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A solar comprehensive utilization system, characterized in that, The system comprises a semi-transparent photovoltaic cell, a photothermal reflector, a spectral frequency divider, an opaque photovoltaic cell and a photothermal collector, the semi-transparent photovoltaic cell absorbs ultraviolet light and visible light in the 200-800 nm of the solar spectrum, the photothermal reflector is located below the semi-transparent photovoltaic cell and reflects the remaining spectrum not absorbed by the semi-transparent photovoltaic cell, the spectral frequency divider divides the near-infrared light in the 800-1200 nm and the far-infrared light greater than 1200 nm of the remaining spectrum to the opaque photovoltaic cell and the photothermal collector respectively, the opaque photovoltaic cell uses the near-infrared light for photovoltaic power generation, and the photothermal collector uses the far-infrared light for photothermal power generation.

2. The solar energy comprehensive utilization system according to claim 1, characterized in that, The semi-transparent photovoltaic cell is sequentially provided with a substrate, a first transparent conductive layer, a first transport layer, a light absorption layer, a second transport layer, a second transparent conductive layer and an encapsulation layer from bottom to top; wherein the first transport layer and the second transport layer are a hole transport layer or an electron transport layer.

3. The solar energy comprehensive utilization system according to claim 1, characterized in that, The photothermal reflector comprises a metal coating layer and a dielectric stack arranged on the surface of the metal coating layer, and the dielectric stack comprises a plurality of layers of silicon dioxide layers and titanium dioxide layers alternately stacked.

4. The solar energy comprehensive utilization system according to claim 3, characterized in that, The single-layer thickness of the silicon dioxide layer is 50-200 nm, and the number of layers is 3-8 layers; the single-layer thickness of the titanium dioxide layer is 30-120 nm, and the number of layers is 3-8 layers.

5. The solar energy comprehensive utilization system according to claim 1, characterized in that, The spectral frequency divider comprises a substrate and a dielectric film layer arranged on the surface of the substrate, and the dielectric film layer comprises a plurality of layers of high-refractive-index material layers and low-refractive-index material layers alternately stacked.

6. The solar energy comprehensive utilization system according to claim 5, characterized in that, The single-layer thickness of the high-refractive-index material layer is 30-300 nm, and the number of layers is 5-25 layers; the single-layer thickness of the low-refractive-index material layer is 50-500 nm, and the number of layers is 5-25 layers.

7. The solar energy comprehensive utilization system according to claim 1, characterized in that, The opaque photovoltaic cell comprises a substrate and a surface passivation layer arranged on the surface of the substrate.

8. The solar energy comprehensive utilization system according to claim 1, characterized in that, The semi-transparent photovoltaic cell is coupled to the surface of the photothermal reflector to form a laminated structure, the spectral frequency divider is arranged at the front end of the laminated structure, the opaque photovoltaic cell is arranged at the focal point position of the near-infrared light reflected by the spectral frequency divider, and the photothermal collector is arranged at the focal point position of the far-infrared light transmitted by the spectral frequency divider.

9. The solar energy comprehensive utilization system according to claim 8, characterized in that, An angle adjusting support is arranged at the bottom of the laminated structure and / or the opaque photovoltaic cell.

10. A solar thermal power plant, characterized in that The solar energy comprehensive utilization system is provided with the solar energy comprehensive utilization system of any one of claims 1-9, and the photothermal power station is a tower type photothermal power station, a trough type photothermal power station, a dish type photothermal power station or a Fresnel type photothermal power station.

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