Ideal diode circuit

Abstract

The utility model discloses an ideal diode circuit which comprises an MOS transistor Q1, an inductor L1, an inductor L2, an inductor L3, a control chip U1, a common diode D10, a resistor R77 and a capacitor C22. The first pin, the second pin and the third pin of the MOS tube Q1 are three source electrodes of the MOS tube Q1, and the three source electrodes are connected to form an anode A of an ideal diode; the anode A is connected with one end of the inductor L1, and the other end of the inductor L1 is connected with a fourth pin of the control chip U1. The utility model belongs to the technical field of diodes, and aims to solve the problems that in the prior art, the diode is not suitable for large-current application, voltage lag and high-frequency application, and the influence of temperature change on performance is large. The technical effects are that the phenomenon of voltage lag of an ideal diode can be effectively avoided, the diode is suitable for large-current and high-frequency applications, and the phenomenon that the performance is influenced by large temperature change amplitude is avoided.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of diodes, in particular to an ideal diode circuit. BACKGROUND

[0002] A diode is a widely used component, and the characteristic of a diode is to allow current to flow in only one direction. However, when the diode is turned on, a conduction voltage drop is generated across the diode, and the conduction voltage drop of the diode is generally 0.4-0.7V. An ideal diode is an ideal component model with unidirectional conductivity. The ideal diode can be regarded as a very low resistance. When a forward voltage is applied across the ideal diode, the resistance of the ideal diode is almost zero.

[0003] The ideal diode is equivalent to a wire, and the position of the ideal diode in the circuit is equivalent to a short circuit. When a reverse voltage is applied across the ideal diode, the resistance of the ideal diode is infinite, and the position of the ideal diode in the circuit is equivalent to an open circuit. This ideal model ignores some effects in actual diodes, such as forward voltage drop and reverse leakage. The ideal diode plays a key role in the development of electronic technology and information technology, especially in analog circuits, which contributes to the design and innovation of electronic devices and systems.

[0004] For example, CN 221948049 U, an ideal diode circuit with output control function, discloses an ideal diode circuit with low overall circuit cost, better conduction performance, and higher overall economy.

[0005] However, most ideal diodes have the following problems:

[0006] 1. Not suitable for high current applications: Due to the characteristics of PN junction voltage drop, the heat generated in high current applications is large, which cannot meet the requirement of high efficiency, especially in the case of very large current.

[0007] 2. Voltage hysteresis: The diode has a certain voltage drop when it is in a different state, i.e. forward conduction voltage, which means that a certain voltage is required to turn it on.

[0008] 3. Not suitable for high frequency applications: When the diode is cut off, it still has a certain capacitance, so it may cause problems in high frequency applications.

[0009] 4. Temperature changes have a large impact on performance. Practical new type content

[0010] Therefore, the present application provides an ideal diode circuit to solve the problems of not being suitable for high current applications, voltage hysteresis, not being suitable for high frequency applications, and temperature changes having a large impact on performance.

[0011] To achieve the above object, the present application provides the following technical solutions:

[0012] An ideal diode circuit comprises a MOS tube Q1, an inductor L1, an inductor L2, an inductor L3, a control chip U1, a general diode D10, a resistor R77 and a capacitor C22.

[0013] The first, second and third pins of the MOS tube Q1 are three sources of the MOS tube Q1, and the three sources are connected to form an anode A of an ideal diode.

[0014] The anode A is connected to one end of the inductor L1, and the other end of the inductor L1 is connected to the fourth pin of the control chip U1.

[0015] Further, the fourth pin of the MOS tube Q1 is connected to one end of the inductor L2, and the other end of the inductor L2 is connected to the fifth pin of the control chip U1.

[0016] Further, the fifth, sixth, seventh and eighth pins of the MOS tube Q1 are all drains of the MOS tube, and each drain forms a cathode D of the ideal diode.

[0017] Further, the cathode D is connected to one end of the inductor L3, and the other end of the inductor L3 is connected to the sixth pin of the control chip U1.

[0018] Further, the second and third pins of the control chip U1 are connected to GND.

[0019] Further, the first pin of the control chip U1 is connected to one end of the resistor R77, and the other end of the resistor R77 is connected to the cathode of the general diode D10.

[0020] Further, the anode of the general diode D10 is connected to the positive electrode of a 12V power supply.

[0021] Further, one end of the capacitor C22 is connected to the first pin of the control chip U1, and the other end of the capacitor C22 is connected to GND.

[0022] Compared with the prior art, the present application has at least the following beneficial effects:

[0023] 1. The ideal diode has no threshold voltage, that is, once any voltage is applied to the triode, it will conduct current between its junctions, which means that the ideal diode is easier to be activated and has a lower starting voltage, avoids the phenomenon of voltage hysteresis, and is suitable for large current applications; under ideal conditions, the ideal diode applies any positive voltage to the terminal;

[0024] 2. Because the resistance of an ideal diode is extremely low in the opposite state, the energy loss is minimal when current flows through it, which helps to improve circuit efficiency. At the same time, its extremely high resistance in the blocking state ensures that there is no significant leakage current in the off state, which helps to save energy and avoids the phenomenon that large temperature changes affect performance. The switching action of an ideal diode is very fast, and it can complete the transition from off to on and from on to off in a very short time, making it suitable for high-frequency applications. Attached Figure Description

[0025] To more intuitively illustrate the prior art and this application, exemplary drawings are provided below. It should be understood that the specific shapes and structures shown in the drawings should not generally be regarded as limiting conditions for implementing this application; for example, based on the technical concept disclosed in this application and the exemplary drawings, those skilled in the art are able to easily make conventional adjustments or further optimizations to the addition / reduction / classification, specific shapes, positional relationships, connection methods, size ratios, etc. of certain units (components).

[0026] Figure 1 This is a front cross-sectional view of an ideal diode circuit provided in one embodiment of this application. Detailed Implementation

[0027] The present application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0028] like Figure 1 As shown, an ideal diode circuit in this embodiment includes: MOSFET Q1, inductor L1, inductor L2, inductor L3, control chip U1, ordinary diode D10, resistor R77 and capacitor C22.

[0029] MOSFET Q1 is a low-internal-resistance power MOSFET, and inductors L1, L2, and L3 are used for noise filtering.

[0030] The MOS transistor Q1 has three sources, with pins 1, 2, and 3 being the three sources. These three sources are connected to form the anode A of an ideal diode.

[0031] The anode A is connected to one end of the inductor L1, and the other end of the inductor L1 is connected to the fourth pin of the control chip U1. The fourth pin of the MOS transistor Q1 is connected to one end of the inductor L2, and the other end of the inductor L2 is connected to the fifth pin of the control chip U1.

[0032] When a positive voltage is applied to the circuit, i.e., the anode A is the positive terminal, the gate drive voltage of pin 5 of the control chip U1 outputs a high level. At this time, the MOS transistor is in the conducting state, realizing the forward conduction of current. The circuit can enter from the anode A and exit from the cathode D.

[0033] The fourth pin of the MOS tube Q1 is connected with one end of the inductor L2, and the other end of the inductor L2 is connected with the fifth pin of the control chip U1.

[0034] The fifth, sixth, seventh and eighth pins of the MOS tube Q1 are all the drain of the MOS tube, and each drain constitutes the cathode D of the ideal diode; the cathode D is connected with one end of the inductor L3, and the other end of the inductor L3 is connected with the sixth pin of the control chip U1.

[0035] The first pin of the control chip U1 is connected with one end of the resistor R77, and the other end of the resistor R77 is connected with the cathode of the general diode D10; the resistor R77 is used for limiting current, protecting the control chip U1 from excessive current, and at the same time, the resistor R77 can also help to stabilize the voltage in the circuit, preventing the voltage from suddenly changing and damaging the control chip U1.

[0036] The anode of the general diode D10 is connected with the positive pole of the 12V power supply.

[0037] One end of the capacitor C22 is connected with the first pin of the control chip U1, and the other end of the capacitor C22 is connected to GND; the second and third pins of the control chip U1 are connected to GND; this connection mode helps to ensure the stability and reliability of the circuit, because GND provides a stable reference point, making voltage measurement and signal transmission more accurate.

[0038] When a reverse voltage is applied in the circuit, that is, a forward voltage is applied at the cathode D, at this time, the fifth pin of the control chip U1 drives the voltage output to be low, so that the MOS tube Q1 is in the off state, and the current is blocked by the MOS tube Q1, and cannot be turned on, that is, the ideal diode characteristics are realized by using the MOS tube Q1.

[0039] The ideal diode composed of the above-mentioned circuit has no threshold voltage, that is, once any voltage is applied on the triode, it will conduct current between its junctions, which means that the ideal diode is easier to activate and has a lower starting voltage, avoiding the phenomenon of voltage hysteresis, and is suitable for large current applications; under ideal conditions, the ideal diode has any positive voltage applied on the terminal.

[0040] Because the resistance of the ideal diode in the abnormal state is extremely low, the energy loss is extremely small when the current passes through, which is conducive to improving the efficiency of the circuit, and the extremely high resistance in the blocking state makes there is no obvious leakage current in the off state, which helps to save energy and avoid the phenomenon that the performance is affected by the large temperature change amplitude; the switching action of the ideal diode is very fast, and it can complete the conversion from off to on and from on to off in a very short time, which is suitable for high frequency applications.

[0041] Any technical features in the above embodiments can be combined (as long as the combinations of the technical features do not contradict each other), and for the sake of brevity, not all possible combinations of the technical features in the above embodiments are described; the embodiments not explicitly written in the above description should also be considered as the scope of the present disclosure.

Claims

1. An ideal diode circuit, characterized by MOS tube Q1, inductor L1, inductor L2, inductor L3, control chip U1, general diode D10, resistor R77 and capacitor C22 are included. The MOS tube Q1 is the 1st, 2nd and 3rd pins of the MOS tube Q1, which are three sources of the MOS tube Q1, and the three sources are connected to form an anode A of an ideal diode. The anode A is connected to one end of the inductor L1, and the other end of the inductor L1 is connected to the 4th pin of the control chip U1.

2. An ideal diode circuit according to claim 1, characterized in that The 4th pin of the MOS tube Q1 is connected to one end of the inductor L2, and the other end of the inductor L2 is connected to the 5th pin of the control chip U1.

3. An ideal diode circuit as claimed in claim 1, characterized in that The 5th, 6th, 7th and 8th pins of the MOS tube Q1 are all drain electrodes of the MOS tube, and each drain electrode forms a cathode D of an ideal diode.

4. An ideal diode circuit as claimed in claim 3, characterized in that The cathode D is connected to one end of the inductor L3, and the other end of the inductor L3 is connected to the 6th pin of the control chip U1.

5. An ideal diode circuit as claimed in claim 1, characterized in that The 2nd and 3rd pins of the control chip U1 are connected to GND.

6. An ideal diode circuit as claimed in claim 1, characterized in that The 1st pin of the control chip U1 is connected to one end of the resistor R77, and the other end of the resistor R77 is connected to the cathode of the general diode D10.

7. An ideal diode circuit as claimed in claim 6, characterized in that The anode of the general diode D10 is connected to the positive electrode of a 12V power supply.

8. An ideal diode circuit as claimed in claim 6, characterized in that One end of the capacitor C22 is connected to the 1st pin of the control chip U1, and the other end of the capacitor C22 is connected to GND.

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