Ultrasonic welding transducer driving circuit and electronic equipment

Abstract

The embodiment of the utility model provides an ultrasonic welding transducer driving circuit and electronic equipment. The ultrasonic welding transducer driving circuit comprises a rectifying and filtering voltage conversion circuit and a signal processing circuit, wherein the rectifying and filtering voltage conversion circuit is connected with the signal processing circuit; the rectifying and filtering voltage conversion circuit comprises a high-voltage operational amplifier circuit, the high-voltage operational amplifier circuit comprises an input stage, an intermediate stage and an output stage, the input stage is connected with the intermediate stage, the intermediate stage is connected with the output stage, the input stage comprises a mirror current source and cascade type differential input, and the intermediate stage comprises bias voltage setting. The output stage includes a power output, a push-pull output, and a bias voltage. The ultrasonic welding transducer driving circuit provided by the embodiment of the utility model can reduce power consumption and improve precision and stability.

Description

Technical Field

[0001] This utility model relates to the field of electronic technology, and in particular to an ultrasonic welding transducer drive circuit and electronic equipment. Background Technology

[0002] Over the past decade, with the widespread application of plastics in practical engineering and daily life, the development of the basic electronics industry, and the successful development of high-power transducers, the ultrasonic plastic welding industry has gradually developed, along with the development of ultrasonic welding equipment. Ultrasonic welding equipment mainly consists of two parts: an ultrasonic generator and an ultrasonic transducer. The ultrasonic generator is also the drive circuit for the ultrasonic welding transducer. Currently, high-power ultrasonic welding transducers exhibit distortion after prolonged use, and for equipment with high instantaneous power requirements, there are also issues with power instability and power fluctuations. Utility Model Content

[0003] In view of this, the present invention provides an ultrasonic welding transducer drive circuit and electronic device to reduce power consumption and improve accuracy and stability.

[0004] On one hand, this utility model embodiment provides an ultrasonic welding transducer driving circuit, including: a rectifier-filter voltage conversion circuit and a signal processing circuit, wherein the rectifier-filter voltage conversion circuit is connected to the signal processing circuit;

[0005] The rectifier-filter voltage conversion circuit includes a high-voltage operational amplifier circuit, which includes an input stage, an intermediate stage, and an output stage. The input stage is connected to the intermediate stage, and the intermediate stage is connected to the output stage. The input stage includes a mirror current source and a cascaded differential input. The intermediate stage includes a bias voltage setting. The output stage includes a power output, a push-pull output, and a bias voltage.

[0006] Optionally, the high-voltage operational amplifier circuit further includes a protection circuit, a compensation circuit, and a bias circuit. The input stage is connected to the compensation circuit and the bias circuit, respectively. The intermediate stage is connected to the compensation circuit and the bias circuit, respectively. The output stage is connected to the compensation circuit, the protection circuit, and the bias circuit, respectively.

[0007] Optionally, the signal processing circuit includes: a high-speed MCU signal processing control circuit, a high-frequency signal generation circuit, a power amplifier circuit, an impedance matching circuit, and a detection and sampling circuit;

[0008] The rectifier-filter voltage conversion circuit is connected to the high-speed MCU signal processing and control circuit, the high-frequency signal generation circuit, and the power amplifier circuit, respectively. The high-speed MCU signal processing and control circuit is connected to the high-frequency signal generation circuit, the high-frequency signal generation circuit is connected to the power amplifier circuit, the power amplifier circuit is connected to the impedance matching circuit, the impedance matching circuit is connected to the detection and sampling circuit, the detection and sampling circuit is connected to the high-speed MCU signal processing and control circuit, and the impedance matching circuit and the detection and sampling circuit are connected to the transducer.

[0009] Optionally, the mirrored current source includes: a first power supply V1, a seventh resistor R7, an eighth resistor R8, a first transistor Q1, and a second transistor Q2. The first power supply V1 is connected to the seventh resistor R7 and the eighth resistor R8, the seventh resistor R7 is connected to the second transistor Q2, the eighth resistor R8 is connected to the first transistor Q1, and the first power supply V1 is grounded.

[0010] Optionally, the cascaded differential input includes a third transistor Q3, a fourth transistor Q4, a second field-effect transistor J2, a third field-effect transistor J3, a tenth resistor R10, and an eleventh resistor R11. The second transistor Q2 is connected to a first diode D1, the first transistor Q1 is connected to a first field-effect transistor J1, the first diode D1 is connected to the first field-effect transistor J1, the first diode D1 is connected to the fourth transistor Q4, the first field-effect transistor J1 is connected to both the third transistor Q3 and the fourth transistor Q4, the fourth transistor Q4 is connected to the second field-effect transistor J2, the second field-effect transistor J2 is connected to the tenth resistor R10, the third transistor Q3 is connected to the third field-effect transistor J3, and the third field-effect transistor J3 is connected to the eleventh resistor R11.

[0011] Optionally, the intermediate stage includes: a ninth resistor R9, a seventh capacitor C7, a fourth MOSFET U4, and a second capacitor C2. The first power supply V1 is connected to the seventh resistor R7, the eighth resistor R8, the ninth resistor R9, and the seventh capacitor C7, respectively. The ninth resistor R9 and the seventh capacitor C7 are connected in parallel. The ninth resistor R9 and the seventh capacitor C7 are connected to the fourth MOSFET U4, and the fourth MOSFET U4 is connected to the second capacitor C2.

[0012] Optionally, the bias voltage setting includes: a 23rd resistor R23, a 24th resistor R24, a 17th transistor Q17, a 4th capacitor C4, a 25th resistor R25, a 26th resistor R26, and a Zener diode U5. The 23rd resistor R23 is connected to the 24th resistor R24, the 17th transistor Q17, and the 4th capacitor C4. The 4th capacitor C4 is connected to the Zener diode U5. The 24th resistor R24 ​​is connected to the Zener diode U5 and the 25th resistor R25. The Zener diode U5 is connected to the 25th resistor R25 and the 26th resistor R26.

[0013] Optionally, the output stage includes: a thirteenth transistor Q13, a ninth transistor Q9, a seventeenth resistor R17, an eleventh transistor Q11, an eighteenth resistor R18, a nineteenth resistor R19, a fourteenth transistor Q14, a twenty-seventh resistor R27, an eighth MOSFET U8, and a fifth capacitor C5. The thirteenth transistor Q13 is connected to the seventeenth resistor R17, the ninth transistor Q9, the seventh capacitor C7, the fifth capacitor C5, and the eighteenth resistor R18. The seventeenth resistor R17 and the ninth transistor Q9 are connected to the eleventh transistor Q11. The eighteenth resistor R18 is connected to the nineteenth resistor R19 and the twenty-seventh resistor R27. The seventeenth resistor R17, the eleventh transistor Q11, and the nineteenth resistor R19 are connected to the fourteenth transistor Q14. The fourteenth transistor Q14 is connected to the fifth capacitor C5. The twenty-seventh resistor R27 is connected to the eighth MOSFET U8.

[0014] Optionally, the output stage further includes: a sixth capacitor C6, a fifteenth transistor Q15, a thirteenth transistor Q10, a twentieth resistor R20, a twenty-first resistor R21, a twelfth transistor Q12, a twenty-second resistor R22, a twenty-eighth resistor R28, a third MOSFET M3, and a sixteenth transistor Q16. The fifth capacitor C5 is connected in parallel with the sixth capacitor C6. The sixth capacitor C6 is connected to the sixteenth transistor Q16, the third MOSFET M3, and the fifteenth transistor Q15. The fifteenth transistor Q15 is connected to the twenty-first resistor R21... The thirteenth transistor Q10 is connected to the twentieth resistor R20. The thirteenth transistor Q10 is connected to the twelfth transistor Q12. The twentieth resistor R20 is connected to the eighteenth resistor R28 and the twentieth resistor R22. The twentieth resistor R22 is connected to the sixteenth transistor Q16. The sixteenth transistor Q16 is connected to the twelfth transistor Q12 and the eleventh resistor R21. The eighteenth resistor R28 is connected to the third MOSFET M3. The eighth MOSFET U8 is connected to the third MOSFET M3.

[0015] On the other hand, this utility model embodiment provides an electronic device, including the above-mentioned ultrasonic welding transducer drive circuit.

[0016] The ultrasonic welding transducer driving circuit provided in this embodiment of the invention includes: a rectifier-filter voltage conversion circuit and a signal processing circuit, wherein the rectifier-filter voltage conversion circuit and the signal processing circuit are connected; the rectifier-filter voltage conversion circuit includes a high-voltage operational amplifier circuit, which includes an input stage, an intermediate stage, and an output stage, wherein the input stage is connected to the intermediate stage, and the intermediate stage is connected to the output stage; the input stage includes a mirror current source and a cascaded differential input; the intermediate stage includes a bias voltage setting; and the output stage includes a power output, a push-pull output, and a bias voltage. The ultrasonic welding transducer driving circuit provided in this embodiment of the invention can reduce power consumption and improve accuracy and stability. Attached Figure Description

[0017] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 A schematic diagram of an ultrasonic welding transducer drive circuit provided in an embodiment of the present invention;

[0019] Figure 2A schematic diagram of a high-voltage operational amplifier circuit provided in an embodiment of this utility model;

[0020] Figure 3 This is a schematic diagram of another high-voltage operational amplifier circuit provided in one embodiment of the present invention. Detailed Implementation

[0021] To better understand the technical solution of this utility model, the embodiments of this utility model will be described in detail below with reference to the accompanying drawings.

[0022] It should be understood that the described embodiments are merely some embodiments of this utility model, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of this utility model without creative effort are within the scope of protection of this utility model.

[0023] The terminology used in the embodiments of this utility model is for the purpose of describing particular embodiments only and is not intended to be limiting of the utility model. The singular forms “a,” “the,” and “the” used in the embodiments of this utility model and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise.

[0024] It should be understood that the term "and / or" used in this article is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. Additionally, the character " / " in this article generally indicates that the preceding and following related objects have an "or" relationship.

[0025] This utility model provides an embodiment of an ultrasonic welding transducer drive circuit. Figure 1 A schematic diagram of an ultrasonic welding transducer drive circuit provided in an embodiment of this utility model is shown below. Figure 1 As shown, the ultrasonic welding transducer drive circuit includes a rectifier-filter voltage conversion circuit and a signal processing circuit, with the rectifier-filter voltage conversion circuit and the signal processing circuit connected together. The signal processing circuit includes a high-speed microcontroller unit (MCU) signal processing control circuit, a high-frequency signal generation circuit, a power amplifier circuit, an impedance matching circuit, and a detection and sampling circuit.

[0026] The rectifier-filter voltage conversion circuit is connected to the high-speed MCU signal processing and control circuit, the high-frequency signal generation circuit, and the power amplifier circuit, respectively. The high-speed MCU signal processing and control circuit is connected to the high-frequency signal generation circuit, the high-frequency signal generation circuit is connected to the power amplifier circuit, the power amplifier circuit is connected to the impedance matching circuit, the impedance matching circuit is connected to the detection and sampling circuit, the detection and sampling circuit is connected to the high-speed MCU signal processing and control circuit, and the impedance matching circuit and the detection and sampling circuit are connected to the transducer.

[0027] In this embodiment of the invention, the rectifier-filter voltage conversion circuit, the high-speed MCU signal processing control circuit, the high-frequency signal generation circuit, the power amplifier circuit, and the impedance matching circuit are sequentially electrically connected using a proportional-integral (PI) algorithm.

[0028] In this embodiment of the invention, the PI algorithm can drive the motor speed to achieve static zero error under disturbance, thereby eliminating system static error.

[0029] In this embodiment of the invention, the rectifier-filter voltage conversion circuit can be connected to AC220V / 50Hz AC power.

[0030] In this embodiment of the invention, the detection sampling circuit detects the phase of the current and voltage output to the transducer in real time. The high-speed MCU signal processing control circuit determines whether the transducer is working at the resonant frequency state based on the real-time current and voltage phase difference data. If an offset is detected, a control signal is output to the square wave signal generation circuit to adjust the output signal frequency in real time, so that the frequency of the electrical signal output by the ultrasonic welding transducer drive circuit is consistent with the resonant frequency of the transducer.

[0031] Based on the above-mentioned ultrasonic welding transducer driving circuit, the rectifier-filter voltage conversion circuit includes a high-voltage operational amplifier circuit driven by piezoelectric ceramics (PZT). One embodiment of this invention provides a high-voltage operational amplifier circuit. Figure 2 A schematic diagram of a high-voltage operational amplifier circuit provided in one embodiment of this utility model is shown below. Figure 2 As shown, the high-voltage operational amplifier circuit includes an input stage, an intermediate stage, and an output stage. The input stage is connected to the intermediate stage, and the intermediate stage is connected to the output stage.

[0032] In this embodiment of the present invention, the high-voltage operational amplifier circuit further includes: a protection circuit, a compensation circuit, and a bias circuit. The input stage is connected to the compensation circuit and the bias circuit, respectively. The intermediate stage is connected to the compensation circuit and the bias circuit, respectively. The output stage is connected to the compensation circuit, the protection circuit, and the bias circuit, respectively.

[0033] In this embodiment of the invention, the input stage circuit structure adopts a cascaded junction field-effect transistor (JFET) and a bipolar junction transistor (BJT), which has higher performance.

[0034] In this embodiment of the invention, the intermediate stage circuit structure adopts a common-source amplifier circuit, which can increase the output amplitude and amplify the input signal into a larger output signal.

[0035] In this embodiment of the invention, a transistor is added to the output stage circuit structure to eliminate crossover distortion (by voltage compensation of the circuit through the turn-on voltage of the transistor to eliminate crossover distortion), so as to ensure that the amplifier outputs a high-quality sine wave signal, which is suitable for amplification requirements of various AC signals.

[0036] In this embodiment of the invention, a protection circuit is added and phase compensation is implemented. The input stage adopts a cascaded differential input pair. The intermediate stage is similar to the second stage of a two-stage operational amplifier. The output stage can consist of two pairs of complementary push-pull outputs, a voltage bias circuit, and an output current limiting circuit for eliminating crossover distortion.

[0037] In this embodiment of the invention, the protection circuit can perform real-time current limiting and short-circuit protection, and can control the switching of the load by driving the MOSFET.

[0038] In this embodiment of the invention, the compensation circuit can employ a phase compensation method. The bias circuit can provide a bias voltage to reduce crossover distortion of the output signal.

[0039] One embodiment of this utility model provides another high-voltage operational amplifier circuit. Figure 3 A schematic diagram of another high-voltage operational amplifier circuit provided in one embodiment of this utility model is shown below. Figure 3 As shown, the high-voltage operational amplifier circuit includes an input stage, an intermediate stage, and an output stage. The input stage is connected to the intermediate stage, and the intermediate stage is connected to the output stage. The input stage includes a current mirror and a cascaded differential input. The intermediate stage includes a bias voltage setting. The output stage includes a power output, a push-pull output, and a bias voltage.

[0040] In this embodiment of the invention, an additional bias voltage can be added to the output stage to reduce crossover distortion.

[0041] In this embodiment of the present invention, the mirror current source includes: a first power supply V1, a seventh resistor R7, an eighth resistor R8, a first transistor Q1, and a second transistor Q2. The first power supply V1 is connected to the seventh resistor R7 and the eighth resistor R8, the seventh resistor R7 is connected to the second transistor Q2, the eighth resistor R8 is connected to the first transistor Q1, and the first power supply V1 is grounded.

[0042] In this embodiment of the present invention, the cascaded differential input includes a third transistor Q3, a fourth transistor Q4, a second field-effect transistor J2, a third field-effect transistor J3, a tenth resistor R10, and an eleventh resistor R11. The second transistor Q2 is connected to the first diode D1, the first transistor Q1 is connected to the first field-effect transistor J1, the first diode D1 is connected to the first field-effect transistor J1, the first diode D1 is connected to the fourth transistor Q4, the first field-effect transistor J1 is connected to both the third transistor Q3 and the fourth transistor Q4, the fourth transistor Q4 is connected to the second field-effect transistor J2, the second field-effect transistor J2 is connected to the tenth resistor R10, the third transistor Q3 is connected to the third field-effect transistor J3, and the third field-effect transistor J3 is connected to the eleventh resistor R11.

[0043] In this embodiment of the present invention, the intermediate stage includes: a ninth resistor R9, a seventh capacitor C7, a fourth MOSFET U4, and a second capacitor C2. The first power supply V1 is connected to the seventh resistor R7, the eighth resistor R8, the ninth resistor R9, and the seventh capacitor C7 respectively. The ninth resistor R9 and the seventh capacitor C7 are connected in parallel. The ninth resistor R9 and the seventh capacitor C7 are connected to the fourth MOSFET U4. The fourth MOSFET U4 is connected to the second capacitor C2.

[0044] In this embodiment of the present invention, the bias voltage setting includes: a 23rd resistor R23, a 24th resistor R24, a 17th transistor Q17, a 4th capacitor C4, a 25th resistor R25, a 26th resistor R26, and a Zener diode U5. The 23rd resistor R23 is connected to the 24th resistor R24, the 17th transistor Q17, and the 4th capacitor C4. The 4th capacitor C4 is connected to the Zener diode U5. The 24th resistor R24 ​​is connected to the Zener diode U5 and the 25th resistor R25. The Zener diode U5 is connected to the 25th resistor R25 and the 26th resistor R26.

[0045] In this embodiment of the present invention, the output stage includes: a thirteenth transistor Q13, a ninth transistor Q9, a seventeenth resistor R17, an eleventh transistor Q11, an eighteenth resistor R18, a nineteenth resistor R19, a fourteenth transistor Q14, a twenty-seventh resistor R27, an eighth MOSFET U8, and a fifth capacitor C5. The thirteenth transistor Q13 is connected to the seventeenth resistor R17, the ninth transistor Q9, the seventh capacitor C7, the fifth capacitor C5, and the eighteenth resistor R18. The seventeenth resistor R17 and the ninth transistor Q9 are connected to the eleventh transistor Q11. The eighteenth resistor R18 is connected to the nineteenth resistor R19 and the twenty-seventh resistor R27. The seventeenth resistor R17, the eleventh transistor Q11, and the nineteenth resistor R19 are connected to the fourteenth transistor Q14. The fourteenth transistor Q14 is connected to the fifth capacitor C5. The twenty-seventh resistor R27 is connected to the eighth MOSFET U8.

[0046] In this embodiment of the invention, the output stage further includes: a sixth capacitor C6, a fifteenth transistor Q15, a thirteenth transistor Q10, a twentieth resistor R20, a twenty-first resistor R21, a twelfth transistor Q12, a twenty-second resistor R22, a twenty-eighth resistor R28, a third MOSFET M3, and a sixteenth transistor Q16. The fifth capacitor C5 is connected in parallel with the sixth capacitor C6. The sixth capacitor C6 is connected to the sixteenth transistor Q16, the third MOSFET M3, and the fifteenth transistor Q15. The fifteenth transistor Q15 is connected to... The 21st resistor R21, the 13th transistor Q10, and the 20th resistor R20 are connected. The 13th transistor Q10 is connected to the 12th transistor Q12. The 20th resistor R20 is connected to the 28th resistor R28 and the 22nd resistor R22. The 22nd resistor R22 is connected to the 16th transistor Q16. The 16th transistor Q16 is connected to the 12th transistor Q12 and the 21st resistor R21. The 28th resistor R28 is connected to the 3rd MOSFET M3. The 8th MOSFET U8 is connected to the 3rd MOSFET M3.

[0047] In this embodiment of the present invention, the eighth MOS transistor U8 and the third MOS transistor M3 are connected to the twenty-ninth resistor R29. The twenty-ninth resistor R29 is connected to the fourth resistor R4 and the sixth resistor R6 respectively. The fourth resistor R4 is grounded. The sixth resistor R6 is connected to the second field-effect transistor J2. The third field-effect transistor J3 is connected to the fifth resistor R5. The fifth resistor R5 is connected to the AC motor V3. The AC motor V3 is grounded.

[0048] In this embodiment of the present invention, the first MOSFET M1 is connected to the eighth resistor R8, the ninth resistor R9, the fifteenth resistor R15, the thirteenth resistor R13, the third transistor Q3, the fourth transistor Q4, the first capacitor C1, the second diode D2, and the thirteenth resistor R13. The first capacitor C1 is connected to the fifth transistor Q5 and the seventh transistor Q7. The second diode D2 is connected to the seventh transistor Q7. The fifth transistor Q5 is connected to the seventh transistor Q7, the sixth transistor Q6, the third capacitor C3, the eighth transistor Q8, and the twelfth resistor R12. The twelfth resistor R12 is connected to the second power supply V2, the second Zener diode U7, the third capacitor C3, the sixteenth resistor R16, and the sixteenth transistor Q16. The eighth transistor Q8 is connected to the sixteenth resistor R16, the twenty-first resistor R21, the twelfth transistor Q12, and the sixteenth transistor Q16. The second power supply V2 is grounded.

[0049] In this embodiment of the invention, the input stage adopts a differential input structure. The overall structure adopts a constant current source differential amplifier circuit, with an external mirror current source, an analog current source, and a current bias circuit. The input signal is connected to the gate stage of the field-effect transistor (JFET) differential pair LS5912 (i.e., the second field-effect transistor J2 and the third field-effect transistor J3) after passing through the eighth resistor R8 and the tenth resistor R10. The LS5912 differential pair is cascaded with BJTs (the eighth transistor Q8 and the ninth transistor Q9) to reduce the Miller effect and increase the output impedance.

[0050] In this embodiment of the invention, the intermediate stage adopts a two-stage operational amplifier common-source amplifier circuit structure. Current flows through the MOS connected to the diode, and under constant current conditions, the gate generates a fixed bias voltage.

[0051] In this embodiment of the present invention, the output stage can be composed of push-pull output, power output and bias voltage. The complementary symmetrical push-pull output adopts two sets of Class AB power amplifier structure, wherein the power output transistors are the third MOS transistor M3 and the eighth MOS transistor U8.

[0052] The ultrasonic welding transducer driving circuit provided in this embodiment of the invention includes: a rectifier-filter voltage conversion circuit and a signal processing circuit, wherein the rectifier-filter voltage conversion circuit and the signal processing circuit are connected; the rectifier-filter voltage conversion circuit includes a high-voltage operational amplifier circuit, which includes an input stage, an intermediate stage, and an output stage, wherein the input stage is connected to the intermediate stage, and the intermediate stage is connected to the output stage; the input stage includes a mirror current source and a cascaded differential input; the intermediate stage includes a bias voltage setting; and the output stage includes a power output, a push-pull output, and a bias voltage. The ultrasonic welding transducer driving circuit provided in this embodiment of the invention can reduce power consumption and improve accuracy and stability.

[0053] This utility model provides a highly stable ultrasonic welding transducer drive circuit, comprising a rectifier-filter voltage conversion circuit, a high-speed MCU signal processing and control circuit, a high-frequency signal generation circuit, a power amplifier circuit, and an impedance matching circuit connected sequentially via a PI algorithm. The rectifier-filter voltage conversion circuit uses a PZT-driven high-voltage operational amplifier circuit, incorporating a protection circuit and implementing phase compensation. The input stage uses cascaded differential input pairs, the intermediate stage is similar to the second stage of a two-stage operational amplifier, and the output stage consists of two pairs of complementary push-pull outputs, a voltage bias circuit, and an output current limiting circuit to eliminate crossover distortion. This utility model embodiment utilizes a PZT-driven high-voltage operational amplifier circuit to output high-speed current, giving the drive circuit excellent characteristics of low power consumption, high precision, and high stability.

[0054] This utility model provides an electronic device including the above-described ultrasonic welding transducer drive circuit.

[0055] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the scope of protection of the present utility model.

Claims

1. A driving circuit for an ultrasonic welding transducer, characterized in that, include: A rectifier-filter voltage conversion circuit and a signal processing circuit, wherein the rectifier-filter voltage conversion circuit is connected to the signal processing circuit; The rectifier-filter voltage conversion circuit includes a high-voltage operational amplifier circuit, which includes an input stage, an intermediate stage, and an output stage. The input stage is connected to the intermediate stage, and the intermediate stage is connected to the output stage. The input stage includes a mirror current source and a cascaded differential input. The intermediate stage includes a bias voltage setting. The output stage includes a power output, a push-pull output, and a bias voltage.

2. The ultrasonic welding transducer drive circuit according to claim 1, characterized in that, The high-voltage operational amplifier circuit further includes a protection circuit, a compensation circuit, and a bias circuit. The input stage is connected to the compensation circuit and the bias circuit, respectively. The intermediate stage is connected to the compensation circuit and the bias circuit, respectively. The output stage is connected to the compensation circuit, the protection circuit, and the bias circuit, respectively.

3. The ultrasonic welding transducer drive circuit according to claim 1, characterized in that, The signal processing circuit includes: a high-speed MCU signal processing control circuit, a high-frequency signal generation circuit, a power amplifier circuit, an impedance matching circuit, and a detection and sampling circuit; The rectifier-filter voltage conversion circuit is connected to the high-speed MCU signal processing and control circuit, the high-frequency signal generation circuit, and the power amplifier circuit, respectively. The high-speed MCU signal processing and control circuit is connected to the high-frequency signal generation circuit, the high-frequency signal generation circuit is connected to the power amplifier circuit, the power amplifier circuit is connected to the impedance matching circuit, the impedance matching circuit is connected to the detection and sampling circuit, the detection and sampling circuit is connected to the high-speed MCU signal processing and control circuit, and the impedance matching circuit and the detection and sampling circuit are connected to the transducer.

4. The ultrasonic welding transducer drive circuit according to claim 1, characterized in that, The mirror current source includes: a first power supply V1, a seventh resistor R7, an eighth resistor R8, a first transistor Q1, and a second transistor Q2. The first power supply V1 is connected to the seventh resistor R7 and the eighth resistor R8, the seventh resistor R7 is connected to the second transistor Q2, the eighth resistor R8 is connected to the first transistor Q1, and the first power supply V1 is grounded.

5. The ultrasonic welding transducer drive circuit according to claim 4, characterized in that, The cascaded differential input includes a third transistor Q3, a fourth transistor Q4, a second field-effect transistor J2, a third field-effect transistor J3, a tenth resistor R10, and an eleventh resistor R11. The second transistor Q2 is connected to a first diode D1. The first transistor Q1 is connected to a first field-effect transistor J1. The first diode D1 is connected to the first field-effect transistor J1. The first diode D1 is connected to the fourth transistor Q4. The first field-effect transistor J1 is connected to both the third transistor Q3 and the fourth transistor Q4. The fourth transistor Q4 is connected to the second field-effect transistor J2. The second field-effect transistor J2 is connected to the tenth resistor R10. The third transistor Q3 is connected to the third field-effect transistor J3. The third field-effect transistor J3 is connected to the eleventh resistor R11.

6. The ultrasonic welding transducer drive circuit according to claim 4, characterized in that, The intermediate stage includes: a ninth resistor R9, a seventh capacitor C7, a fourth MOSFET U4, and a second capacitor C2. The first power supply V1 is connected to the seventh resistor R7, the eighth resistor R8, the ninth resistor R9, and the seventh capacitor C7. The ninth resistor R9 and the seventh capacitor C7 are connected in parallel. The ninth resistor R9 and the seventh capacitor C7 are connected to the fourth MOSFET U4. The fourth MOSFET U4 is connected to the second capacitor C2.

7. The ultrasonic welding transducer drive circuit according to claim 1, characterized in that, The bias voltage setting includes: a 23rd resistor R23, a 24th resistor R24, a 17th transistor Q17, a 4th capacitor C4, a 25th resistor R25, a 26th resistor R26, and a Zener diode U5. The 23rd resistor R23 is connected to the 24th resistor R24, the 17th transistor Q17, and the 4th capacitor C4. The 4th capacitor C4 is connected to the Zener diode U5. The 24th resistor R24 ​​is connected to the Zener diode U5 and the 25th resistor R25. The Zener diode U5 is connected to the 25th resistor R25 and the 26th resistor R26.

8. The ultrasonic welding transducer drive circuit according to claim 1, characterized in that, The output stage includes: a thirteenth transistor Q13, a ninth transistor Q9, a seventeenth resistor R17, an eleventh transistor Q11, an eighteenth resistor R18, a nineteenth resistor R19, a fourteenth transistor Q14, a twenty-seventh resistor R27, an eighth MOSFET U8, and a fifth capacitor C5. The thirteenth transistor Q13 is connected to the seventeenth resistor R17, the ninth transistor Q9, the seventh capacitor C7, the fifth capacitor C5, and the eighteenth resistor R18. The seventeenth resistor R17 and the ninth transistor Q9 are connected to the eleventh transistor Q11. The eighteenth resistor R18 is connected to the nineteenth resistor R19 and the twenty-seventh resistor R27. The seventeenth resistor R17, the eleventh transistor Q11, and the nineteenth resistor R19 are connected to the fourteenth transistor Q14. The fourteenth transistor Q14 is connected to the fifth capacitor C5. The twenty-seventh resistor R27 is connected to the eighth MOSFET U8.

9. The ultrasonic welding transducer drive circuit according to claim 8, characterized in that, The output stage further includes: a sixth capacitor C6, a fifteenth transistor Q15, a thirteenth transistor Q10, a twentieth resistor R20, a twenty-first resistor R21, a twelfth transistor Q12, a twenty-second resistor R22, a twenty-eighth resistor R28, a third MOSFET M3, and a sixteenth transistor Q16. The fifth capacitor C5 is connected in parallel with the sixth capacitor C6. The sixth capacitor C6 is connected to the sixteenth transistor Q16, the third MOSFET M3, and the fifteenth transistor Q15. The fifteenth transistor Q15 is connected to the twenty-first resistor R21, the... The thirteenth transistor Q10 is connected to the twentieth resistor R20. The thirteenth transistor Q10 is connected to the twelfth transistor Q12. The twentieth resistor R20 is connected to the twenty-eighth resistor R28 and the twenty-second resistor R22. The twenty-second resistor R22 is connected to the sixteenth transistor Q16. The sixteenth transistor Q16 is connected to the twelfth transistor Q12 and the twenty-first resistor R21. The twenty-eighth resistor R28 is connected to the third MOSFET M3. The eighth MOSFET U8 is connected to the third MOSFET M3.

10. An electronic device, characterized in that, Includes the ultrasonic welding transducer drive circuit according to any one of claims 1 to 9.

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