Sensor pixel unit and electronic equipment
By shortening the distance between the diffused active region and the gate of the source follower transistor and using metal silicide for connection, parasitic capacitance is reduced, thereby improving the photosensitivity and image quality of the CMOS image sensor, especially the image acquisition effect in low-light environments.
Patent Information
- Application Number
- CN202423322054.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-31
- Publication Date
- 2026-01-23
- Estimated Expiration
- 2034-12-31
AI Technical Summary
Existing CMOS image sensors suffer from insufficient image quality and low photosensitivity in low-light environments, mainly due to the large parasitic capacitance in the diffused active region, which affects the photoelectric conversion gain.
By shortening the distance between the diffused active region and the gate of the source follower transistor, and connecting them using a conducting device made of metal material and metal silicide, parasitic capacitance is reduced and photoelectric conversion gain is improved.
It improves the light sensitivity of image sensor pixels to light signals, optimizes image quality, and especially enhances image acquisition performance in low-light environments.
Smart Images
Figure CN223829393U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present disclosure relates to the technical field of sensors, and in particular to a sensor pixel unit and an electronic device. BACKGROUND
[0002] Image sensors have been widely applied in the fields of digital cameras, mobile phones, medical treatment, automobiles, unmanned aerial vehicles and machine recognition, and the rapid development of the manufacturing technology of complementary metal oxide semiconductor (CMOS) image sensors makes people have higher requirements for the output image quality of image sensors. The CMOS image sensor can be divided into two categories according to the signal acquisition mode: one mode is to set the exposure time of the pixel and then measure the voltage signal change; the second mode is to set the voltage change of the pixel and then measure the exposure time. CONTENT OF THE INVENTION
[0003] In one aspect of the present disclosure, a sensor pixel unit is provided, comprising a photodiode, a charge transfer transistor, a reset transistor, a source follower transistor and a pixel selection transistor.
[0004] The source end of the charge transfer transistor is connected with one end of the photodiode, the gate end receives an external switch signal, the drain end is connected with the source end of the reset transistor, and the active area of the drain end of the charge transfer transistor is connected with the active area of the source end of the reset transistor as a diffusion active area.
[0005] The other end of the photodiode is grounded.
[0006] The gate end of the reset transistor receives a reset signal, and the drain end of the reset transistor receives a power supply signal.
[0007] The source end of the source follower transistor is connected with the source end of the pixel selection transistor, and the drain end of the source follower transistor is connected with the power supply signal.
[0008] The gate end of the pixel selection transistor receives an external output signal, and the drain end of the pixel selection transistor serves as an output end of the sensor pixel unit.
[0009] In the circuit layout, the distance between the diffusion active area and the gate end of the source follower transistor is less than a preset distance, and the diffusion active area and the gate end of the source follower transistor are connected through a conduction device of a preset structure.
[0010] Optionally, the source follower transistor receives the accumulated photoelectric charges in the diffusion active region through the passageway formed by the conductive device, and generates a corresponding target signal according to the change of the photoelectric charges, and outputs the target signal through the drain end of the pixel selection transistor.
[0011] Optionally, the conductive device includes a connecting piece of a first material and two contact pieces of a second material; the first material and the second material are different;
[0012] The connecting piece connects the diffusion active region and the gate end of the source follower transistor through the contact pieces;
[0013] The two contact pieces are respectively arranged at the contact between the connecting piece and the diffusion active region, and the contact between the connecting piece and the gate end of the source follower transistor.
[0014] Optionally, the first material is a metal material or a metal composite material.
[0015] Optionally, the second material is a metal silicide.
[0016] Optionally, the thickness of the connecting piece is 10-200 nm.
[0017] Another aspect of the embodiments of the present disclosure provides an electronic device, comprising:
[0018] The electronic device comprises a processor and a memory connected with the processor in communication, and further comprises the sensor pixel unit of any of the above embodiments.
[0019] The memory stores computer execution instructions.
[0020] The processor executes the computer execution instructions stored in the memory to control the sensor pixel unit.
[0021] Optionally, the electronic device is included in any of the following: an image data acquisition device, an audio / video player, a navigation device, an entertainment device, a communication device, a roadside traffic facility, a device in a motor vehicle, an industrial detection device, a flight device, a medical device, a security device.
[0022] The embodiment of the present disclosure provides a sensor pixel unit and an electronic device, a photodiode, a charge transfer transistor, a reset transistor, a source follower transistor and a pixel selection transistor; one end of the photodiode is connected with a source end of the charge transfer transistor, a gate end of the charge transfer transistor receives an external switch signal, a drain end of the charge transfer transistor is connected with a source end of the reset transistor, and an active area of the drain end of the charge transfer transistor is connected with an active area of the source end of the reset transistor as a diffusion active area; the other end of the photodiode is grounded; a gate end of the reset transistor receives a reset signal, and a drain end of the reset transistor receives a power supply signal; a source end of the source follower transistor is connected with a source end of the pixel selection transistor, and a drain end of the source follower transistor is connected with the power supply signal; a gate end of the pixel selection transistor receives an external output signal, and a drain end of the pixel selection transistor serves as an output end of the sensor pixel unit; in a circuit layout, a distance between the diffusion active area and a gate end of the source follower transistor is less than a preset distance, and the diffusion active area and the gate end of the source follower transistor are connected through a conduction device of a preset structure. The embodiment of the present disclosure shortens the distance between the diffusion active area and the gate end of the source follower transistor, reduces the parasitic capacitance, improves the photoelectric conversion gain of the photoelectric charge collected by the photodiode, and further improves the photosensitive sensitivity of the image sensor pixel to the light signal, and optimizes the image quality of the image sensor collected by the pulse sequence.
[0023] The technical solutions of the present disclosure are described in further detail below by means of the drawings and embodiments. BRIEF DESCRIPTION OF DRAWINGS
[0024] The accompanying drawings, which form a part of the specification, illustrate embodiments of the present disclosure and, together with the description, serve to explain the principles of the present disclosure.
[0025] The present disclosure can be more clearly understood and appreciated from the following detailed description, taken in conjunction with the accompanying drawings, in which:
[0026] Figure 1 A circuit diagram of one embodiment of the sensor pixel unit of the present disclosure;
[0027] Figure 2 A layout structure schematic diagram of the sensor pixel unit corresponding to the embodiment provided by the present disclosure; Figure 1
[0028] Figure 3 A partial cross-sectional view of one embodiment of the sensor pixel unit corresponding to the embodiment provided by the present disclosure; Figure 2
[0029] Figure 4 A partial cross-sectional view of another embodiment of the sensor pixel unit provided by the present disclosure; Figure 2
[0030] Figure 5 A flow chart of a local preparation method of a sensor pixel unit provided by an embodiment of the present disclosure is shown in FIG. 1.
[0031] Figure 6a A schematic diagram of substrate preparation in a local preparation method of a sensor pixel unit provided by an embodiment of the present disclosure is shown in FIG. 2.
[0032] Figure 6b A schematic diagram of depositing a metal material in a local preparation method of a sensor pixel unit provided by an embodiment of the present disclosure is shown in FIG. 3.
[0033] Figure 6c A schematic diagram of spin-coating photoresist in a local preparation method of a sensor pixel unit provided by an embodiment of the present disclosure is shown in FIG. 4.
[0034] Figure 6d A schematic diagram of photoresist development in a local preparation method of a sensor pixel unit provided by an embodiment of the present disclosure is shown in FIG. 5.
[0035] Figure 6e A schematic diagram of metal material etching in a local preparation method of a sensor pixel unit provided by an embodiment of the present disclosure is shown in FIG. 6.
[0036] Figure 6f A schematic diagram of removing photoresist in a local preparation method of a sensor pixel unit provided by an embodiment of the present disclosure is shown in FIG. 7.
[0037] Figure 6g A schematic diagram of silicidation in a local preparation method of a sensor pixel unit provided by an embodiment of the present disclosure is shown in FIG. 8.
[0038] Figure 7 A structural schematic diagram of an application embodiment of an electronic device of the present disclosure is shown in FIG. 9. DETAILED DESCRIPTION
[0039] Various exemplary embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings. Note that the relative arrangement, numerical expressions, and numerical values of components and steps set forth in these embodiments are not limiting to the scope of the present disclosure unless otherwise specifically stated.
[0040] Those skilled in the art can understand that the terms "first", "second", and the like in the embodiments of the present disclosure are only used to distinguish different steps, devices, or modules, and neither represent any specific technical meaning nor indicate their inherent logical sequence.
[0041] It should also be understood that in the embodiments of the present disclosure, "a plurality of" can mean two or more, and "at least one" can mean one, two, or more.
[0042] It should also be understood that, for any components, data, or structures mentioned in the embodiments of the present disclosure, one or more can be generally understood unless specifically limited or contrary implications are given in the context.
[0043] In addition, the term "and / or" in the present disclosure is merely a description of the association relationship of the associated objects, which means that there can be three relationships, for example, A and / or B can represent the three cases of A alone, A and B together, and B alone. In addition, the character " / " in the present disclosure generally represents an "or" relationship between the front and rear associated objects.
[0044] It should also be understood that the description of the embodiments of the present disclosure emphasizes the differences between the embodiments, and the same or similar parts can be referred to each other, and for the sake of brevity, will not be repeated.
[0045] At the same time, it should be understood that, for the convenience of description, the size of each part shown in the drawings is not drawn according to the actual proportion relationship.
[0046] The following description of at least one example embodiment is merely illustrative in nature and is in no way intended to limit the present disclosure, its application, or uses.
[0047] Techniques, methods, and devices known to those of ordinary skill in the relevant art can not be discussed in detail, but should be considered part of the specification where appropriate.
[0048] It should be noted that similar reference numbers and letters refer to similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further discussed in subsequent drawings.
[0049] The embodiments of the present disclosure can be applied to terminal devices, computer systems, servers, and other electronic devices, which can operate with many other general or special computing system environments or configurations. Examples of well-known terminal devices, computing systems, environments, and / or configurations suitable for use with terminal devices, computer systems, servers, and other electronic devices include, but are not limited to: personal computer systems, server computer systems, thin clients, thick clients, handheld or laptop devices, microprocessor-based systems, set-top boxes, programmable consumer electronics, network personal computers, small computer systems, large computer systems, and distributed cloud computing technology environments including any of the above systems, etc.
[0050] Electronic devices such as terminal devices, computer systems, servers, and the like can be described in the general context of computer system-executable instructions, such as program modules, being executed by a computer system. Generally, program modules can include routines, programs, objects, components, logic, data structures, and the like, that perform particular tasks or implement particular abstract data types. Computer systems / server can be practiced in distributed cloud computing environments with other computer systems coupled via communication networks. The program modules can be stored in the local or remote computer system memory devices.
[0051] Image sensors are generally used to convert optical signals into electrical signals, and are an important part of a digital camera. According to different pixel devices of image sensors, image sensors can be divided into two categories: charge coupled device (CCD) and CMOS image sensor (CIS). Generally, an active pixel unit in a CMOS image sensor pixel array includes a photo diode (PD) and several transistors. Figure 1 A circuit diagram of one embodiment of a sensor pixel unit of the present disclosure. Figure 1 Taking a 4-transistor CMOS image sensor pixel as an example, the pixel unit includes a photo diode 101, a charge transfer transistor (TX) 102, a reset transistor (RST) 105, a source follow transistor (SF) 103, and a row select transistor (SEL) 104.
[0052] In the present embodiment, the connection relationship between the various components is the same as that of a conventional 4T pixel unit. One end of the photo diode 101 is connected to ground, and the other end of the photo diode 101 is connected to the source end of the charge transfer transistor 102.
[0053] The source end of the charge transfer transistor 102 is connected to the photo diode 101, the gate end receives an external switch signal, and the drain end is connected to the source end of the reset transistor 105. The active area of the drain end of the charge transfer transistor 102 is connected to the active area of the source end of the reset transistor 105 as a floating diffusion (FD). In the prior art, a metal wire is used to connect the FD and the gate end of the SF together.
[0054] Figure 1The working principle of the pixel is that the PD collects photoelectric charges during pixel exposure, and the photoelectric charges in the PD are transmitted to the FD when the TX tube is turned on at the end of pixel exposure. The potential signal of the FD before and after the aforementioned photoelectric charge transmission is detected by the SF tube and transmitted to the subsequent circuit through the Vpix terminal for processing. The difference between the two signals is called a photoelectric signal. The intensity of the photoelectric signal, i.e., the photosensitive sensitivity of the pixel, is determined by the photoelectric conversion gain at the FD and is inversely proportional to the parasitic capacitance of the FD. The parasitic capacitance of the FD is composed of two parts: the parasitic capacitance of the active area of the FD and the metal wiring capacitance of the FD. In the conventional pixel design in the prior art, the metal wiring capacitance of the FD accounts for about half of the total parasitic capacitance of the FD. The parasitic capacitance of the active area of the FD is limited by the process node of the process manufacturing platform, and it is difficult to reduce this part of the capacitance.
[0055] The photodiode 101 is used for photoelectric conversion to obtain photoelectric charges and accumulate the photoelectric charges. In response to reaching a charge output condition, the photoelectric charges are transmitted to the diffusion active area FD through the charge transmission transistor 102.
[0056] The source terminal of the reset transistor 105 is connected with the power supply terminal Vdd to receive a power supply signal. The gate terminal of the reset transistor 105 receives a reset signal and is controlled to be turned on or turned off according to the reset signal. In response to the reset signal controlling the reset transistor 105 to be turned on, the charge transmission transistor 102 is turned on, and a reset operation is performed on the photodiode 101.
[0057] In view of the problems in the prior art, in order to improve the photoelectric conversion gain at the FD to increase the photosensitive sensitivity of the pixel, and thus improve the image quality of the CMOS image sensor, especially in a weak light environment, the present embodiment proposes the following circuit layout scheme to reduce the parasitic capacitance of the FD.
[0058] Figure 2 The sensor pixel unit of the present disclosure corresponds to Figure 1 A layout structure schematic diagram of the provided embodiment is shown. As Figure 2 shown, in the circuit layout, the distance between the diffusion active area FD and the gate terminal of the source follower transistor 103 is less than a preset distance, and is connected through a preset structure of a conduction device.
[0059] The present embodiment shortens the distance between the diffusion active area FD and the gate terminal of the source follower transistor 103 to reduce the parasitic capacitance CM and improve the photosensitive sensitivity of the sensor pixel unit. Therefore, the smaller the preset distance is, the better. According to Figure 2 it can be known that the gate terminal of the source follower transistor 103 is arranged at a position as close as possible directly below the diffusion active area FD.
[0060] In order to more clearly describe the connection structure of the local structure of the present disclosure, Figure 3For the sensor pixel unit corresponding to this disclosure Figure 2 A partial cross-sectional view of the provided embodiment. Figure 3 It shows Figure 2 A schematic diagram of a cross-section device is shown at position 22. Shallow trench isolation regions 301 are disposed between various devices (e.g., photodiodes and source follower transistors), and can be made of insulating material to isolate adjacent devices. Figure 3 In order to indicate the connection relationship between the diffused active region and the gate terminal of the source follower transistor 103, the diffused active region and the gate terminal of the source follower transistor 103 are separately labeled. The diffused active region 302 is formed by connecting the drain active region of the charge transport transistor 102 and the source active region of the reset transistor 105. The gate terminal of the source follower transistor 103 is marked as 303, and the gate terminal 303 can be made of polycrystalline silicon material. Figure 3 The location of the connecting device 201 is clearly shown. One side of the connecting device 201 is connected to the gate terminal 303, and the other side of the connecting device 201 is connected to the diffused active region 302. In this embodiment, by placing the source follower transistor 103 close to the diffused active region 302, with only a small shallow trench isolation region 301 separating them, the length of the connecting device 201 is significantly shortened compared to the prior art, thus reducing parasitic capacitance. Figure 3 As shown, pixel units can be fabricated on a semiconductor silicon substrate (P-epi).
[0061] like Figure 2 As shown, the diffused active region 302 is also connected to the source terminal of the reset transistor 105. In response to the reset transistor 105 receiving a reset signal through its gate terminal, the diffused active region 302 is connected to the power supply signal through the reset transistor 102 to clear the photoelectric charge in the diffused active region 302.
[0062] The source terminal of the source follower transistor 103 is connected to the source terminal of the pixel selection transistor 104, and the drain terminal of the source follower transistor 103 is connected to the power supply signal.
[0063] The source follower transistor 103 is used to follow the charge change in the diffused active region 302 to generate a corresponding target signal (e.g., voltage signal Vpix, etc.), and output it through the pixel selection transistor 104.
[0064] The gate terminal of the pixel selection transistor 104 receives the external output signal, and the drain terminal of the pixel selection transistor 104 serves as the output terminal of the sensor pixel unit.
[0065] The pixel selection transistor 104 is turned on or off according to the control of the external output signal. When the external output signal is high, the pixel selection transistor 104 is turned on and outputs the target signal originally generated by the follower transistor 103.
[0066] In circuit layout, it can be done according to Figure 2 The provided embodiment is laid out such that the charge transfer transistor 102 is directly connected to the photodiode, the reset transistor 105 is located at the lower right corner of the photodiode 101, the reset transistor 105 is connected to the source follower transistor 103 through the diffused active region FD and the conducting device, the source follower transistor 103 is located at the bottom of the photodiode 101 near the reset transistor 102, and the pixel selection transistor 104 is located to the left of the source follower transistor 103.
[0067] The embodiments disclosed herein reduce parasitic capacitance by shortening the distance between the diffused active region and the gate terminal of the source follower transistor, thereby increasing the photoelectric conversion gain of the photocharge collected by the photodiode, and thus improving the photosensitivity of the image sensor pixels to light signals and optimizing the image quality acquired by the pulse sequence image sensor.
[0068] The source follower transistor 103 receives the photoelectric charge accumulated in the diffused active region through the path formed by the conducting device 201, generates a corresponding target signal according to the change of photoelectric charge, and outputs the target signal through the drain terminal of the pixel selection transistor 104.
[0069] Figure 4 It shows Figure 2 A schematic diagram of another cross-sectional device at position 22 is shown. (See diagram.) Figure 4 As shown, the conducting device 201 includes a connector 202 made of a first material and two contacts 203 made of a second material.
[0070] The first material and the second material are different.
[0071] The connector 202 connects the diffused active region 302 and the gate terminal of the source follower transistor 103 via a contact.
[0072] Two contacts 203 are respectively disposed at the contact point between the connector 202 and the diffused active region 302, and at the contact point between the connector 202 and the gate terminal of the source follower transistor 103.
[0073] Because the connector is short, it does not generate parasitic capacitance, thus improving the photosensitivity of the sensor pixel units.
[0074] In this embodiment, by directly providing a contact in the diffused active region to the connector, the contact resistance between the connector and the diffused active region is reduced; and a contact is provided at the contact point between the connector and the gate polysilicon of the source follower transistor 103 to reduce the contact resistance between the connector and the gate polysilicon of the source follower transistor 103.
[0075] In some alternative embodiments, the first material is a metallic material or a metal composite material; the second material is a metal silicide.
[0076] Alternatively, the metallic material can be cobalt (Co) or titanium nitride (TiN), or a composite of Co and TiN, or a platinum-nickel alloy (NiPt), or a composite of NiPt and TiN.
[0077] This embodiment reduces the contact resistance between the connector and other devices by providing a metal silicide contact at the connection surface between the connector, which is made of a connecting metal material or a metal composite material, and other devices (diffused active region or gate terminal of source follower transistor).
[0078] In some alternative embodiments, the thickness of the connector is 10 nm to 200 nm.
[0079] This embodiment of the present disclosure shortens the distance between the diffused active region and the gate terminal of the source follower transistor, and provides a contact made of metal silicide on the contact surface of the connector, eliminating parasitic capacitance, further improving the photoelectric conversion gain of the photocharge collected by the photodiode, enhancing the photosensitivity of the image sensor pixels to light signals, and further optimizing the image quality acquired by the pulse sequence image sensor.
[0080] Optionally, the photodiode 101, charge transport transistor 102, reset transistor 105, source follower transistor 103, and pixel select transistor 104 are fabricated on a semiconductor silicon substrate, and the portion of the diffused active region that is not connected to the conducting device and the source end of the reset transistor 102 is covered by a gate oxide layer.
[0081] Optionally, shallow trench isolation regions 301 are respectively provided in the semiconductor silicon substrate covered by the gate oxide layer on both sides below the gate terminal of the source follower transistor 103.
[0082] like Figure 3 As shown, the gate terminal is isolated from other devices by a shallow trench isolation region 301.
[0083] Figure 5 A flowchart illustrating a method for locally fabricating sensor pixel units according to embodiments of this disclosure. Figure 5 As shown, the preparation method provided in this embodiment can be used to prepare the above-mentioned... Figures 1-3 The sensor pixel unit provided in any embodiment includes:
[0084] Step 502: Fabricate a diffused active region, a shallow trench isolation region, and a gate region of a source follower transistor shared by the drain terminal of the charge transport transistor and the source terminal of the reset transistor on a semiconductor silicon substrate to obtain an initial device.
[0085] In this embodiment, the process of preparing the diffusion active region shared by the drain terminal of the charge transfer transistor and the source terminal of the reset transistor, the shallow trench isolation region and the gate region of the source follower transistor on the semiconductor silicon substrate can refer to the common preparation method of the 4-transistor pixel unit in the prior art, which will not be described here. Alternatively, as shown in Figure 6a The diffusion active region 302, the shallow trench isolation region 301 and the gate region of the source follower transistor are prepared on the semiconductor silicon substrate (P-epi).
[0086] Step 504, depositing a layer of metal material on the initial device upper surface.
[0087] Alternatively, the metal material can be cobalt Co or titanium nitride TiN, and can also be a composite of Co and TiN, and can also be platinum nickel alloy NiPt, and can also be a composite of NiPt and TiN.
[0088] Alternatively, the thickness of the deposited metal material can be 10nm-200nm, and a thin layer of metal is deposited for subsequent preparation of the connecting member. For example, as shown in Figure 6b A thin layer of metal material is deposited on the initial device.
[0089] Step 506, according to the positional relationship between the diffusion active region and the gate region, determining the position and shape of the connecting member connecting the diffusion active region and the gate region, and only retaining the metal material corresponding to the position of the connecting member.
[0090] Alternatively, in order to reduce the contact resistance, the distance between the diffusion active region and the gate region is set to a small value to reduce the parasitic capacitance.
[0091] Step 508, silicidizing the position of the diffusion active region and the gate region connected by the connecting member to obtain two contact members with a predetermined thickness, and the connecting member and the two contact members realize the connection between the diffusion active region and the gate region.
[0092] In this embodiment, the diffusion active region and the gate region contacted by the connecting member are silicided to reduce the contact resistance of the connecting member.
[0093] In this embodiment, the diffusion active region FD and the gate terminal of the source follower transistor are connected by a thin layer of metal; the contact resistance between the diffusion active region and the thin layer of metal is low, the contact resistance between the thin layer of metal and the gate terminal of the source follower transistor is low, which is conducive to the stability of the semiconductor manufacturing process, and the contact surface between the gate terminal and the thin layer of metal is further silicided to further reduce the contact resistance. The diffusion active region FD and the gate terminal of the source follower transistor are connected by a thin layer of metal, which can greatly reduce the metal parasitic capacitance formed by the FD metal connecting line, and improve the photosensitive sensitivity of the prepared sensor pixel unit, compared with the conventional aluminum or copper process used in the prior art to prepare the metal connecting line.
[0094] In some alternative embodiments, step 506 may include:
[0095] The location and shape of the connector between the diffused active region and the gate region are determined by photoresist development technology.
[0096] This embodiment improves the fabrication efficiency of connectors by using photoresist development.
[0097] Remove all metal material except for the connectors.
[0098] In this embodiment, photoresist development is used to retain only the metal material at the connector location, making the shape of the fabricated connector more consistent with the required length, reducing excessive contact between the connector and the gate region, lowering the contact resistance, and improving the fabrication efficiency of the pixel unit.
[0099] Optionally, the location and shape of the connector between the diffused active region and the gate region are determined using photoresist development technology, including:
[0100] like Figure 6c As shown, photoresist is spin-coated onto the surface of a metal material.
[0101] like Figure 6d As shown, the photoresist is exposed and developed. The position and shape of the connector between the diffused active region and the gate region are determined according to the developed shape. The photoresist outside the connector area is removed.
[0102] The polycrystalline silicon material can be shaped more precisely by using photoresist development, and it can be formed in one step, avoiding the problem of inaccurate shapes that require multiple modifications as in other methods.
[0103] Optionally, remove the metal material from all locations except the connector, including:
[0104] like Figure 6e As shown, exposed metal material is etched away by covering it with photoresist. Alternatively, excess metal material can be removed by chemical ion etching.
[0105] After removing the photoresist from the surface of the polycrystalline silicon material, the following can be obtained: Figure 6f The structure shown.
[0106] After that, as Figure 6g As shown, siliconization is performed on the locations where the diffused active region and the gate region connect to the connectors, resulting in two contacts of a predetermined thickness. The connectors and the two contacts then connect the diffused active region and the gate region. This yields the fabricated gate terminal and connector of the source follower transistor, as shown in the diagram. Figure 4The pixel unit is shown. The embodiment removes the excess metal material by a chemical ion etching method to realize shape preparation of the metal material without damaging the electronic performance of the electronic device, and has greater advantages than other physical means.
[0107] In addition, the electronic device provided in the embodiments of the present disclosure also includes:
[0108] The processor and the memory in communication connection with the processor also include the sensor pixel unit in any of the above embodiments.
[0109] The memory stores computer execution instructions.
[0110] The processor executes the computer execution instructions stored in the memory to control the sensor pixel unit.
[0111] The electronic device provided in the embodiments of the present disclosure can be included in any of the following: an image data acquisition device, an audio / video player, a navigation device, an entertainment device, a communication device, a roadside traffic facility, a device in a motor vehicle, an industrial detection device, a flight device, a medical device, a security device, etc.
[0112] The electronic device provided in the embodiments of the present disclosure can be applied to any of the following: an image data acquisition device, an audio / video player, a navigation device, an entertainment device, a communication device, a roadside traffic facility, a device in a motor vehicle, an industrial detection device, a flight device, a medical device, a security device, etc.
[0113] Figure 7 The structure of an application embodiment of the electronic device of the present disclosure is shown. Hereinafter, the electronic device according to the embodiments of the present disclosure will be described with reference to Figure 7 The electronic device can be any one or both of the first device and the second device, or a single device independent of them, which can communicate with the first device and the second device to receive the input signals collected therefrom.
[0114] As Figure 7 shown, the electronic device includes one or more processors and a memory.
[0115] The processor can be a central processing unit (CPU) or other forms of processing units having data processing capabilities and / or instruction execution capabilities, and can control other components in the electronic device to perform desired functions.
[0116] The memory can store one or more computer program products, which can include various forms of computer-readable storage media, such as volatile memory and / or non-volatile memory. The volatile memory, for example, can include random access memory (RAM), cache memory, and / or the like. The non-volatile memory, for example, can include read-only memory (ROM), hard disk, flash memory, and / or the like. One or more computer program products can be stored on the computer-readable storage media, and the processor can execute the computer program products to implement the sensor pixel unit and the method of manufacturing the same of various embodiments of the disclosure described above and / or other desired functions.
[0117] In one example, the electronic device can further include an input device and an output device, which are interconnected through a bus system and / or other forms of connection mechanisms (not shown).
[0118] In addition, the input device can further include, for example, a keyboard, a mouse, and / or the like.
[0119] The output device can output various information, including the determined distance information, direction information, and / or the like, to the outside. The output device can include, for example, a display, a speaker, a printer, a communication network and a remote output device connected thereto, and / or the like.
[0120] Of course, in order to simplify, Figure 7 Only some of the components related to the present disclosure among the components of the electronic device are illustrated in FIG. 1, and components such as a bus, an input / output interface, and / or the like are omitted. In addition to this, the electronic device can further include any other appropriate components according to a specific application.
[0121] In addition to the above-described method and device, an embodiment of the present disclosure can be a computer program product including computer program instructions that, when executed by a processor, cause the processor to perform the steps of the sensor pixel unit and the method of manufacturing the same according to various embodiments of the present disclosure described in the above parts of the specification.
[0122] The computer program product can be written in any combination of one or more programming languages, including an object-oriented programming language such as Java, C++, and / or the like, and conventional procedural programming languages, such as the "C" programming language or similar programming languages. The program code can execute entirely on the user's computing device, partly on the user's device, as a stand-alone software package, partly on the user's computing device and partly on a remote computing device or entirely on the remote computing device or server.
[0123] In addition, an embodiment of the present disclosure can also be a computer-readable storage medium, having stored thereon computer program instructions, which, when executed by a processor, cause the processor to perform the steps described in the foregoing of the present specification for a sensor pixel unit and a method of manufacturing the same according to various embodiments of the present disclosure.
[0124] The computer-readable storage medium can take the form of one or more combinations of any type of readable media. The readable media can be a readable signal medium or a readable storage medium. The readable storage medium can include, for example, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, device, or apparatus, or any suitable combination thereof. More specific examples (a non-exhaustive list) of the readable storage medium include an electrical connection having one or more wires, a portable disc, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination thereof.
[0125] The above describes the basic principles of the present disclosure in conjunction with specific embodiments, but it should be noted that the advantages, benefits, effects, etc. mentioned in the present disclosure are only examples and are not limiting, and these advantages, benefits, effects, etc. cannot be considered as necessary for each embodiment of the present disclosure. In addition, the above specific details are only for the purpose of example and for the purpose of understanding, and the above details do not limit the present disclosure to be necessarily implemented with the above specific details.
[0126] Each embodiment in the present specification is described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between each embodiment can be understood by mutual reference. For system embodiments, since they basically correspond to method embodiments, the description is relatively simple, and the relevant parts can be understood by referring to the part of the method embodiment.
[0127] The block diagrams of the devices, apparatuses, equipment, systems involved in the present disclosure are only illustrative examples and are not intended to require or imply that the connections, arrangements, configurations must be as shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, equipment, systems can be connected, arranged, configured in any manner. Words such as "include", "contain", "have", etc. are open-ended words, mean "including but not limited to", and can be used interchangeably. The words "or" and "and" used herein mean the word "and / or", and can be used interchangeably unless the context clearly indicates otherwise. The word "such as" used herein means the phrase "such as but not limited to", and can be used interchangeably.
[0128] The methods and apparatus of the present disclosure can be implemented in a number of ways. For example, the methods and apparatus of the present disclosure can be implemented using software, hardware, firmware or any combination of software, hardware, firmware. The order of any steps described above is merely exemplary and the steps of the methods of the present disclosure need not be performed in the order described above unless otherwise specified. Furthermore, in some embodiments, the present disclosure can also be implemented as a program for running on a computer or a processor to implement the methods according to the present disclosure. Thus, the present disclosure also covers a record medium storing the program for executing the methods according to the present disclosure.
[0129] It is also important to note that the present disclosure can be implemented in methods, apparatuses, and systems containing various combinations of the elements described herein. It is therefore contemplated that the present disclosure can be practiced with the specific elements described above, or in a variety of ways adaptable to the specific application.
[0130] The above description of the disclosed aspects is intended to be illustrative, and not restrictive. Other modifications used to adapt the application to a particular situation will be readily apparent to those of ordinary skill in the art. The general principles defined herein can be applied to other aspects without departing from the scope of the present disclosure. Thus, the present disclosure is not intended to be limited to the aspects presented herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
[0131] The above description has been presented for the purpose of illustration and description. Furthermore, this description is not intended to limit the embodiments of the present disclosure to the forms disclosed herein. Although various example aspects and embodiments have been discussed above, those of ordinary skill in the art will appreciate a variety of modifications, alternatives, permutations, additions, and sub-combinations.
Claims
1. A sensor pixel unit, characterized by Comprising: a photodiode, a charge transfer transistor, a reset transistor, a source follower transistor and a pixel selection transistor; a source end of the charge transfer transistor is connected with one end of the photodiode, a gate end receives an external switch signal, a drain end is connected with a source end of the reset transistor, an active area of the drain end of the charge transfer transistor is connected with an active area of the source end of the reset transistor as a diffusion active area; the other end of the photodiode is grounded; a gate end of the reset transistor receives a reset signal, a drain end of the reset transistor receives a power supply signal; a source end of the source follower transistor is connected with a source end of the pixel selection transistor, a drain end of the source follower transistor is connected with the power supply signal; a gate end of the pixel selection transistor receives an external output signal, a drain end of the pixel selection transistor is an output end of a sensor pixel unit; in a circuit layout, a distance between the diffusion active area and a gate end of the source follower transistor is less than a preset distance, and is connected through a conduction device of a preset structure.
2. The pixel cell of claim 1, wherein, The conduction device comprises a connecting piece of a first material and two contact pieces of a second material; the first material and the second material are different; the connecting piece connects the diffusion active area and the gate end of the source follower transistor through the contact pieces; the two contact pieces are respectively arranged at a contact between the connecting piece and the diffusion active area, and a contact between the connecting piece and the gate end of the source follower transistor.
3. The pixel cell of claim 2, wherein, The first material is a metal material or a metal composite material.
4. The pixel cell of claim 2 or 3, wherein, The second material is a metal silicide.
5. The pixel cell of claim 2, wherein, The thickness of the connecting piece is 10nm-200nm.
6. An electronic device, comprising: Comprising: a processor, and a memory connected with the processor in communication, further comprising the sensor pixel unit according to any one of claims 1-5; the memory stores computer execution instructions; the processor executes the computer execution instructions stored in the memory to control the sensor pixel unit.
7. The apparatus of claim 6, wherein, The electronic device is included in any one of the following: an image data acquisition device, an audio / video player, a navigation device, an entertainment device, a communication device, a roadside traffic facility, a device in a motor vehicle, an industrial detection device, a flight device, a medical device, a security device.