Multi-ion-source processing equipment

Abstract

The utility model discloses multi-ion-source processing equipment, and relates to the technical field of semiconductor processing equipment, and the multi-ion-source processing equipment comprises a process chamber; the carrying table is arranged at the bottom of the process chamber, and the carrying table is provided with a bearing surface for placing a to-be-treated workpiece; the carrying table can rotate along a first axis perpendicular to the center of the bearing surface and can also rotate along a second axis parallel to the bearing surface; the first ion source is movably mounted at the top of the process chamber and can emit a first ion beam, and an irradiation area of the first ion beam covers a local area of the bearing surface; and the second ion source is installed at the top of the process chamber and can emit a second ion beam, and the irradiation area of the second ion beam at least covers the bearing surface. According to the technical scheme, surface processing can be conducted on the workpiece to be processed through the first ion beam emitted by the first ion source and the second ion beam emitted by the second ion source, and compared with ion source processing equipment adopting a single ion source, the process flexibility is improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor processing equipment technology, and in particular to a multi-ion source processing device. Background Technology

[0002] An ion source processing device is a semiconductor processing device that integrates an ion source. It can be used to perform surface modification, coating, etching, polishing, and other treatments on materials. This device can generate ion beams of specific types and energies to meet the needs of different application scenarios.

[0003] Currently, most ion source processing equipment uses a single type of ion source, resulting in poor process flexibility. Utility Model Content

[0004] In view of the above problems, this application provides a multi-ion source processing device that can perform surface treatment on the workpiece by using different types of first and second ion sources, thereby improving process flexibility.

[0005] The specific plan is as follows:

[0006] This application provides a multi-ion source processing device, including:

[0007] Process chambers;

[0008] A stage is located at the bottom of the process chamber. The stage has a bearing surface for placing the workpiece to be processed. The stage can rotate along a first axis perpendicular to the center of the bearing surface and also along a second axis parallel to the bearing surface.

[0009] The first ion source is movably installed on the top of the process chamber and is capable of emitting a first ion beam. The irradiation area of ​​the first ion beam covers a local area of ​​the bearing surface.

[0010] The second ion source is installed at the top of the process chamber and is capable of emitting a second ion beam. The irradiation area of ​​the second ion beam at least covers the bearing surface.

[0011] Optionally, in the above-mentioned multi-ion source processing device, both the first ion source and the second ion source are connected to a physical property gas source;

[0012] The first ion source is based on a physical property gas source that is connected to a physical property gas source. It emits a first ion beam with physical processing characteristics and is used to perform local etching on the surface of the workpiece to be processed.

[0013] The second ion source is based on a physical property gas source that is connected to a physical property gas source. It emits a second ion beam with physical processing characteristics, which is used to perform full-surface etching on the surface of the workpiece to be processed.

[0014] The energies of the first and second ion beams are both greater than the bond energies between the bulk atoms of the workpiece to be processed.

[0015] Optionally, in the above-mentioned multi-ion source processing equipment, the first ion source is connected to the modified gas source, and the second ion source is connected to the physical property gas source.

[0016] The first ion source is based on the modified gas fed by the modified gas source, and emits a first ion beam with chemical processing characteristics to perform modification treatment on a preset area of ​​the surface of the workpiece to be treated, forming a modified layer in the preset area.

[0017] The second ion source is based on a physical property gas source that is connected to a physical property gas source. It emits a second ion beam with physical processing characteristics, which is used to etch and remove the modified layer.

[0018] The energy of the second ion beam is less than the bond energy between bulk atoms of the workpiece to be treated and the bond energy between modified atoms in the modified layer and surface atoms of the workpiece to be treated, but greater than the bond energy between surface atoms of the workpiece to be treated and bulk atoms of the workpiece to be treated.

[0019] Optionally, in the above-mentioned multi-ion source processing device, the first ion source is a focused ion source, and the second ion source is a planar ion source or a beam-expanding ion source.

[0020] Optionally, in the above-mentioned multi-ion source processing equipment, the first ion source is installed on the top of the process chamber by a first driving device, which enables the first ion source to move relative to the stage.

[0021] The stage is mounted at the bottom of the process chamber via a second drive device, which enables the stage to rotate based on a first axis and a second axis.

[0022] Optionally, in the above-mentioned multi-ion source processing device, the first driving device can move the first ion source on a preset plane and can also adjust the emission direction of the first ion beam.

[0023] Optionally, in the above-mentioned multi-ion source processing device, the first driving device includes: a first motion axis; a second motion axis perpendicularly intersecting the first motion axis, the first ion source being mounted on the second motion axis; and the second motion axis being capable of moving along the first motion axis.

[0024] Optionally, in the above-mentioned multi-ion source processing equipment, the first driving device can control the first ion source to move from one side of the workpiece to be processed to the other side along a horizontal line.

[0025] Optionally, in the above-mentioned multi-ion source processing equipment, the second ion source is fixedly installed on the top of the process chamber, and the ion beam emission direction of the second ion source has an angle with the vertical direction.

[0026] Optionally, in the above-mentioned multi-ion source processing device, the ion beam emission directions of the first ion source and the second ion source are respectively angled with the vertical direction, and the angles corresponding to the first ion source and the second ion source are not equal.

[0027] The multi-ion source processing equipment provided in this application, based on the above technical solution, includes: a process chamber; a stage disposed at the bottom of the process chamber, the stage having a bearing surface for placing the workpiece to be processed; the stage is rotatable along a first axis perpendicular to the center of the bearing surface and also rotatable along a second axis parallel to the bearing surface; a first ion source movably mounted on the top of the process chamber, capable of emitting a first ion beam, the irradiation area of ​​the first ion beam covering a partial area of ​​the bearing surface; and a second ion source mounted on the top of the process chamber, capable of emitting a second ion beam, the irradiation area of ​​the second ion beam at least covering the bearing surface. The multi-ion source processing equipment provided in this application can perform surface processing on the workpiece to be processed using the first ion beam emitted from the first ion source and the second ion beam emitted from the second ion source, thus improving process flexibility compared to ion source processing equipment using a single ion source. Attached Figure Description

[0028] To more clearly illustrate the technical solutions in the embodiments of this application or related technologies, the drawings used in the description of the embodiments or prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0029] The structures, proportions, sizes, etc., shown in the accompanying drawings are only for the purpose of assisting those skilled in the art in understanding and reading the content disclosed in the specification, and are not intended to limit the implementation conditions of this application. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportions, or adjustments to the size, without affecting the effects and purposes that this application can produce, should still fall within the scope of the technical content disclosed in this application.

[0030] Figure 1 This is a schematic diagram of the structure of a multi-ion source processing device provided in an embodiment of this application;

[0031] Figure 2 A schematic diagram illustrating the principle of the first driving device controlling the movement of the first ion source on a plane;

[0032] Figure 3 A schematic diagram illustrating the principle of the first driving device controlling the ion beam emission direction of the first ion source.

[0033] Figure 4This is a schematic diagram of another multi-ion source processing device provided in an embodiment of this application;

[0034] Figure 5 This is a schematic diagram illustrating the principle of the multi-ion source processing device provided in this application for realizing a spiral ion beam scanning path on the surface of the workpiece to be processed;

[0035] Figure 6 This is a schematic diagram illustrating the principle of the platform rotating based on a second axis.

[0036] Figure 7 This is a schematic diagram of the structure of another multi-ion source processing device provided in the embodiments of this application;

[0037] Figure 8 This is a schematic diagram illustrating the principle of surface polishing of a workpiece using the multi-ion source treatment equipment provided in this application embodiment;

[0038] Figure 9 This is a schematic diagram of the structure of another multi-ion source processing device provided in the embodiments of this application;

[0039] Figure 10 This is a schematic diagram illustrating the principle of surface patterning of a workpiece using the multi-ion source processing equipment provided in this application embodiment.

[0040] Figure label:

[0041] 1-Process chamber; 2-First driving device; 3-Platform; 4-Workpiece to be processed; 5-Bearing surface; 7-Physical property gas source; 8-Modified gas source; 61-First axis; 62-Second axis; 101-First ion source; 102-Second ion source; 201-First motion axis; 202-Second motion axis; 203-Third motion axis; 501-First ion beam; 502-Second ion beam. Detailed Implementation

[0042] The embodiments of this application will now be clearly and completely described with reference to the accompanying drawings. Those skilled in the art will recognize that, with technological advancements and the emergence of new scenarios, the technical solutions provided in the embodiments of this application are equally applicable to similar technical problems.

[0043] Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application. The terminology used in the embodiments of this application is only used to explain the specific embodiments of this application, and is not intended to limit this application.

[0044] The development of modern short-wave optics, high-intensity optics, electronics, IC technology, information storage technology, and thin-film science has placed even more stringent demands on surfaces. Surfaces with roughness better than the nanometer scale are generally referred to as ultra-smooth surfaces. Commonly used ultra-smooth surface processing methods include bath polishing, float polishing, and ductile polishing. While these methods can achieve highly flat surfaces, traditional processes primarily employ contact processing methods. Even if a workpiece meets the surface flatness requirements, subsurface damage may still exist beneath the surface, affecting the performance of optical components.

[0045] In recent years, with the advancement of technology, ion beam polishing has gradually attracted widespread attention. Ion beam polishing does not cause subsurface loss to the workpiece and can achieve higher precision processing. As the critical dimensions of devices shrink and the complexity of devices increases, higher demands are placed on ion beams. Therefore, focused ion beam technology, which has been developed in recent years, can use high-intensity focused ion beams to perform nanofabrication on materials, significantly improving processing resolution. It has been widely used, especially in the semiconductor and filter fields, with corresponding products such as ion beam trimming equipment (IBT).

[0046] Currently, conventional IBT equipment often uses a single focused ion source for shaping, which results in poor process flexibility. Therefore, improving the process flexibility of IBT equipment is a challenge.

[0047] In view of this, embodiments of this application provide a multi-ion source processing device, including:

[0048] Process chambers;

[0049] A stage is located at the bottom of the process chamber. The stage has a bearing surface for placing the workpiece to be processed. The stage can rotate along a first axis perpendicular to the center of the bearing surface and also along a second axis parallel to the bearing surface.

[0050] The first ion source is movably installed on the top of the process chamber and is capable of emitting a first ion beam. The irradiation area of ​​the first ion beam covers a local area of ​​the bearing surface.

[0051] The second ion source is installed at the top of the process chamber and is capable of emitting a second ion beam. The irradiation area of ​​the second ion beam at least covers the bearing surface.

[0052] The multi-ion source processing equipment provided in this application can perform surface processing on the workpiece by using a first ion beam emitted from a first ion source and a second ion beam emitted from a second ion source. Compared with ion source processing equipment using a single ion source, this improves process flexibility.

[0053] It should be noted that the multi-ion source processing equipment provided in this application embodiment is not limited to surface polishing of the workpiece to be processed, but can also be used for surface etching of the workpiece to be processed to form the desired pattern structure.

[0054] The multi-ion source processing device provided in this application embodiment can perform surface treatment on the workpiece by simultaneously operating the first ion source and the second ion source, based on the first ion beam and the second ion beam. Alternatively, it can independently control the first ion source to operate and perform surface treatment on the workpiece by using the first ion beam alone, or independently control the second ion source to operate and perform surface treatment on the workpiece by using the second ion beam alone.

[0055] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0056] refer to Figure 1 , Figure 1 This is a schematic diagram of a multi-ion source processing device provided in an embodiment of this application. The multi-ion source processing device includes:

[0057] Process chamber 1;

[0058] The platform 3 is located at the bottom of the process chamber 1. The platform 3 has a bearing surface 5 for placing the workpiece 4 to be processed. The platform 3 can rotate along a first axis 61 perpendicular to the center of the bearing surface, and the platform 3 can also rotate along a second axis 62 parallel to the bearing surface 5.

[0059] The first ion source 101 is movably installed on the top of the process chamber 1 and can emit a first ion beam 501. The irradiation area of ​​the first ion beam 501 covers a local area of ​​the bearing surface 5, so that the local area of ​​the surface of the workpiece 4 to be processed placed on the bearing surface 5 can be irradiated by the first ion beam 501.

[0060] The second ion source 102 is installed on the top of the process chamber 1 and is capable of emitting a second ion beam 502. The irradiation area of ​​the second ion beam 502 at least covers the bearing surface 5, so that the entire surface of the workpiece 4 to be processed placed on the bearing surface 5 can be irradiated by the second ion beam 502.

[0061] Optionally, the workpiece 4 to be processed can be fixed on the surface of the stage 3 by mechanical clamping or electrostatic adsorption, so that the workpiece 4 to be processed can move synchronously with the stage 3. The workpiece 4 to be processed includes, but is not limited to, semiconductor wafers.

[0062] The multi-ion source processing device provided in this application embodiment can perform surface treatment on the workpiece 4 by simultaneously operating the first ion source 101 and the second ion source 102, so as to simultaneously perform surface treatment on the workpiece based on the first ion beam 501 and the second ion beam 502; it can also be based on the independently controllable first ion source 101 and the second ion source 102, by independently controlling the first ion source 101 to perform surface treatment on the workpiece 4 with the first ion beam 501 alone, or by independently controlling the second ion source 102 to perform surface treatment on the workpiece 4 with the second ion beam 502 alone.

[0063] Optionally, the first ion source 101 is a focused ion source, such that the beam spot area of ​​the first ion beam 501 irradiating the workpiece 4 to be processed is much smaller than the surface area of ​​the workpiece 4 to be processed; the second ion source 102 is a planar or expanded beam ion source, such that the beam spot area of ​​the second ion beam 502 irradiating the workpiece 4 to be processed is equal to or greater than the surface area of ​​the workpiece 4 to be processed.

[0064] The focused ion source includes an ion focusing component, which focuses the first ion beam 501 emitted from the first ion source 101 so that the beam spot of the first ion beam 501 irradiating the surface of the workpiece 4 to be treated is smaller than the aperture of its ion emission port. This focusing allows the first ion beam 501 to irradiate the surface of the workpiece 4 with a smaller beam spot, thus performing surface treatment on a localized area of ​​the surface of the workpiece 4. The focusing component can be a focusing grid or an electrostatic lens. The electrostatic lens can generate a specific electric field distribution, causing the ion beam to be focused as it passes through the electric field region, thereby focusing the first ion beam 501.

[0065] If the second ion source 102 is a planar ion source, the beam spot of the second ion beam 502 emitted from the second ion source 102 is the same as or approximately the same as the aperture of its ion emission port. The second ion beam 502 irradiates the workpiece 4 to be processed in a parallel ion beam manner, which can completely irradiate the surface of the workpiece 4 to be processed, and can achieve surface treatment of the entire surface of the workpiece 4 to be processed.

[0066] If the second ion source 102 is a beam-expanding ion source, the beam-expanding ion source includes a diffusion component. This diffusion component expands the second ion beam 502 emitted from the second ion source 102, so that the beam spot of the second ion beam 502 irradiating the surface of the workpiece 4 to be treated is larger than the aperture of its ion emission port. This beam expansion allows the second ion beam 502 to irradiate the surface of the workpiece 4 with a larger beam spot, irradiating the entire surface of the workpiece 4 simultaneously for surface treatment. The beam-expanding component can be a diffusion grid or an electrostatic lens. An electrostatic lens can generate a specific electric field distribution, causing the ion beam to defocus as it passes through the electric field region, thus expanding the second ion beam 502.

[0067] In this embodiment of the application, the ion beam emission directions of the first ion source 101 and the second ion source 102 each form an angle with the vertical direction, and the angles corresponding to the first ion source 101 and the second ion source 102 are not equal. For example Figure 1 As shown, the first ion beam 501 irradiates the workpiece 4 to be treated in the lower right direction, and the second ion beam 502 irradiates the workpiece 4 to be treated in the lower left direction. The two ion beams have different angles with the vertical direction when they are emitted. By optimizing the difference in the angle between the two ion beams, the surface treatment quality of the workpiece 4 to be treated can be optimized.

[0068] like Figure 1 As shown, the first ion source 101 is mounted on the top of the process chamber 1 via a first driving device 2, which enables the first ion source 101 to move relative to the stage 3. The principle by which the first driving device 2 controls the movement of the first ion source 101 is as follows: Figure 2 and Figure 3 As shown.

[0069] refer to Figure 2 , Figure 2 This is a schematic diagram illustrating the principle of the first driving device controlling the first ion source to move on a plane. The first driving device 2 enables the first ion source 101 to move on a preset plane, which can be parallel to the horizontal plane.

[0070] like Figure 2 As shown, the first driving device 2 can drive the first ion source 101 to move to the right at the position shown in the dashed box. Figure 2 The double-headed arrow indicates that the first ion source 101 can move horizontally on a preset plane.

[0071] refer to Figure 3 , Figure 3 This is a schematic diagram illustrating the principle of the first driving device controlling the emission direction of the ion beam from the first ion source. The first driving device 2 can also adjust the emission direction of the first ion beam 501.

[0072] like Figure 3 As shown, the first driving device 2 can drive the ion outlet of the first ion source 101 to change its orientation from vertical downward to swing angle β, so that the first ion beam 501 changes from irradiating the surface of the workpiece 4 to irradiating the surface of the workpiece 4 at angle β.

[0073] refer to Figure 4 , Figure 4 This is a schematic diagram of another multi-ion source processing device provided in the embodiments of this application. Based on the above embodiments, combined with... Figures 1-4 As shown, the first driving device 2 includes: a first motion axis 201; a second motion axis 202 perpendicularly intersecting the first motion axis 201, and a first ion source 101 mounted on the second motion axis 202. The second motion axis 202 can move along the first motion axis 201, and the first ion source 101 can translate along the second motion axis 202, thereby enabling position adjustment of the first ion source 101 on the two-dimensional plane defined by the first motion axis 201 and the second motion axis 202.

[0074] When performing surface treatment on workpiece 4 using a multi-ion source treatment device, two ion sources can be turned on simultaneously, and different process effects can be achieved by adjusting the process parameters of the device.

[0075] In this embodiment, the first driving device 2 can control the first ion source 101 to move from one side of the workpiece 4 to the other along a horizontal line. This allows the first ion beam 501 to move along a straight line on the surface of the workpiece 4. When the workpiece 4 rotates with the stage 3 based on the first axis 61, a spiral ion beam scanning path can be formed on the surface of the workpiece 4 by the first ion beam 501.

[0076] refer to Figure 5 , Figure 5 This is a schematic diagram illustrating the principle of the multi-ion source processing device provided in this application for realizing a helical ion beam scanning path on the surface of the workpiece to be processed. The stage 3 can be placed horizontally and rotates continuously based on the first axis 61. Figure 5 This is a top view of the workpiece 4 to be processed, which is placed horizontally on the surface of the stage 3.

[0077] Combination Figure 1 and Figure 5As shown, when the stage 3 rotates continuously based on the first axis 61, the first driving device 2 can control the first ion source 101 to move along a horizontal line from one side of the workpiece 4 to the other, thus enabling the first ion beam 501 to form a spiral ion beam scanning path A on the surface of the workpiece 4. By controlling the movement of the first ion source 101 and the stage 3, the first ion beam 501 can irradiate any position on the surface of the workpiece 4.

[0078] By controlling the linear speed of the workpiece 4 to be processed along a motion axis in the first driving device 2 and the rotational speed of the stage 3 along the first axis 61, the dwell time of the first ion beam 501 at each position in the spiral ion beam scanning path A can be adjusted, thereby controlling the amount of shaping at each position on the surface of the workpiece 4 to be processed. The length of the dwell time at each position is controlled by controlling the movement speed of the axis component. When the axis movement speed is slow, the dwell time of the first ion beam 501 in a certain grid will increase, and when the axis movement speed is fast, the dwell time of the first ion beam 501 in a certain grid will decrease. A longer dwell time at a certain position will result in a larger amount of shaping at that position, and a shorter dwell time at a certain position will result in a smaller amount of shaping at that position.

[0079] The stage 3 is mounted at the bottom of the process chamber 1 via a second drive device. This second drive device enables the stage 3 to rotate based on both a first axis 61 and a second axis 62. The second drive device includes a third motion shaft 203 on which the stage 3 is mounted. The third motion shaft 203 can be a universal joint, enabling the stage 3 to rotate based on both the first and second axes 61. The first axis 61 is perpendicular to the workpiece 4 and passes through its center. The principle of the stage 3 rotating based on the second axis 62 is as follows: Figure 6 As shown.

[0080] because Figure 4 In the manner shown, the first driving device 2 can move the first ion source 101 at any position on the plane through two interdigitated motion axes. Therefore, the rotation of the stage 3 around the first axis 61 can also be eliminated to achieve the positioning operation of the first ion beam 501 at any position on the surface of the workpiece 4 to be processed.

[0081] refer to Figure 6 , Figure 6 This is a schematic diagram illustrating the principle of stage rotation based on a second axis. Taking the stage 3 rotating based on the second axis 62 from an initial state where the bearing surface 5 is parallel to the horizontal plane as an example, after the stage 3 rotates based on the second axis 62, the bearing surface 5 can rotate from a horizontal state to an angle α with the horizontal plane. Correspondingly, the first axis 61 has an angle α with the vertical direction. In multi-ion source processing equipment, such as... Figure 1When placed horizontally as shown, the second axis 62 is always parallel to the horizontal plane, and the extension direction of the first axis 61 is related to the included angle α, and always passes perpendicularly through the center of the bearing surface 5 of the platform 3.

[0082] In this embodiment, the power supply parameters of the power sources connected to the first ion beam 501 and the second ion beam 502 can be adjusted so that the energy of the first ion beam 501 and the second ion beam 502 can be matched to complete the etching or modification of the surface of the workpiece 4 to be processed.

[0083] refer to Figure 7 , Figure 7 This is a schematic diagram of another multi-ion source processing device provided in the embodiments of this application. Based on the above embodiments, Figure 7 In the multi-ion source processing device shown, both the first ion source 101 and the second ion source 102 are connected to the physical property gas source 7. The first ion source 101 emits a first ion beam 501 with physical processing characteristics based on the physical property gas connected to the physical property gas source 7, which is used to perform local etching on the surface of the workpiece 4 to be processed. The second ion source 102 emits a second ion beam 502 with physical processing characteristics based on the physical property gas connected to the physical property gas source 7, which is used to perform full-surface etching on the surface of the workpiece 4 to be processed. The energies of the first ion beam 501 and the second ion beam 502 are both greater than the bond energies between the bulk atoms of the workpiece 4 to be processed.

[0084] Optionally, the physical property gas source 7 can provide an inert gas, such as Ar or Xe. The first ion source 101 and the second ion source 102 can form an ion beam with physical etching properties based on the inert gas.

[0085] When two ion sources are simultaneously connected to the physical property gas source 7, the multi-ion source processing equipment can perform surface polishing on the workpiece 4. The working principle is as follows: Figure 8 As shown.

[0086] refer to Figure 8 , Figure 8 This is a schematic diagram illustrating the principle of surface polishing of a workpiece using the multi-ion source treatment equipment provided in this application embodiment, combined with... Figure 7 and Figure 8 As shown, by adjusting the power supply parameters of the power sources connected to the first ion beam 501 and the second ion beam 502, the energies of the first ion beam 501 and the second ion beam 502 can be made greater than the bond energies between the bulk atoms of the workpiece 4 to be processed, so that both the first ion beam 501 and the second ion beam 502 can perform shaping and etching on the surface of the workpiece 4 to be processed, thereby planarizing the surface of the workpiece 4 to be processed.

[0087] like Figure 8As shown, the left figure is a schematic diagram of the surface morphology of the workpiece 4 before surface polishing, and the right figure is a schematic diagram of the surface morphology of the workpiece 4 after surface polishing. When the first ion source 101 performs surface treatment and shaping on the workpiece 4 using the first ion beam 501, the second ion source 102 covers the entire surface of the workpiece 4 using the second ion beam 502 to uniformly treat the entire surface of the workpiece 4. Introducing the second ion source 102 to assist in the treatment can more quickly process and shape the workpiece 4 to the target thickness, significantly shortening the processing time required for shaping.

[0088] refer to Figure 9 , Figure 9 This is a schematic diagram of another multi-ion source processing device provided in the embodiments of this application. Based on the above embodiments, Figure 9 In the multi-ion source processing device shown, the first ion source 101 is connected to the modified gas source 8, and the second ion source 102 is connected to the physical property gas source 7. Based on the modified gas connected to the modified gas source 8, the first ion source 101 emits a first ion beam 501 with chemical processing characteristics. The first ion beam 501 is used to perform modification treatment on a preset area of ​​the surface of the workpiece 4 to be processed, forming a modified layer in the preset area. Based on the physical property gas connected to the physical property gas source 7, the second ion source 102 emits a second ion beam 502 with physical processing characteristics. The second ion beam 502 is used to remove the modified layer.

[0089] The energy of the second ion beam 502 is less than the bond energy between bulk atoms of the workpiece 4 and the bond energy between the modified atoms in the modified layer and the surface atoms of the workpiece 4, but greater than the bond energy between the surface atoms of the workpiece 4 and the bulk atoms of the workpiece 4. Thus, the second ion beam 502 removes the modified layer without causing etching damage to the surface of the workpiece 4 outside the preset area.

[0090] When the first ion source 101 is connected to the modified gas source 8 and the second ion source 102 is connected to the physical property gas source 7, the multi-ion source processing equipment can perform surface patterning processing on the workpiece 4 to be processed. The working principle is as follows: Figure 10 As shown.

[0091] refer to Figure 10 , Figure 10 This is a schematic diagram illustrating the principle of surface patterning of a workpiece using the multi-ion source processing equipment provided in this application embodiment, combined with... Figure 9 and Figure 10As shown, the multi-ion source processing equipment has an air intake assembly (such as a gas holder) connected to the outside of the process chamber 1. The air intake assembly includes a modified gas source 8 and a physical property gas source 7. The controller can control the air intake assembly to introduce surface-modifying gas and physical property gas into the first ion source 101 and the second ion source 102, respectively. The modified gas can be selected according to the material of the workpiece 4 to be processed. For example, if the workpiece 4 is made of silicon, fluorine-based gas or chlorine-based gas can be used as the modified gas.

[0092] Optionally, a surface-modifying gas is introduced into the first ion source 101, and a physical property gas is introduced into the second ion source 102. The first driving device 2 can drive the first ion beam 501 generated by the first ion source 101 to irradiate a localized area of ​​the surface of the workpiece 4 to be treated. The surface-modifying ions in the first ion beam 501 perform surface modification treatment on this localized area of ​​the workpiece 4. This causes the surface-modifying ions to chemically adsorb and form chemical bonds with the surface atoms of the workpiece 4, reducing the bond energy between the surface atoms and bulk atoms of the workpiece 4. This area represents the weakest bond energy in the system. By controlling the irradiation position of the first ion beam 501, modification treatment of a predetermined area on the surface of the workpiece 4 can be achieved.

[0093] The operating parameters (such as radio frequency power and grid voltage) of the second ion source 102 can be adjusted by controlling the radio frequency power supply connected to the second ion source 102 and the grid DC power supply in the second ion source 102. This makes the energy of the second ion beam 502 formed by the second ion source 102 less than the bond energy between the bulk atoms of the workpiece 4 to be treated and the bond energy between the modified atoms and the surface atoms of the workpiece 4 to be treated, but greater than the bond energy between the surface atoms of the workpiece 4 to be treated and the bulk atoms of the workpiece 4 to be treated. As a result, the chemical bonds between the surface atoms of the workpiece 4 to be treated and the bulk atoms of the workpiece 4 to be treated will break due to the bombardment of the second ion beam 502, thereby forming a local atomic layer treatment.

[0094] In another embodiment, a physical processing gas is introduced into the first ion source 101 and a surface modification gas is introduced into the second ion source 102. This method can achieve modification treatment of the entire surface of the workpiece 4 to be treated, and the first ion beam 501 can achieve etching treatment of the local area of ​​the modification layer. It can not only achieve surface patterning treatment of the workpiece 4 to be treated, forming etching trenches, but also modify the surface of the workpiece 4 outside the trenches.

[0095] In this embodiment, the second ion source 102 is fixedly installed on the top of the process chamber 1, and the ion beam emission direction of the second ion source 102 forms an angle with the vertical direction. The second ion beam 502 has a large irradiation area and can irradiate the entire surface of the workpiece 4 to be processed. Therefore, by fixing the second ion source 102 on the top of the process chamber 1 with a fixed irradiation direction, there is no need for a driving device to install the second ion source 102, which simplifies the system structure.

[0096] Optionally, the multi-ion source processing equipment also includes a vacuum system connected to the process chamber 1 to maintain a high vacuum level within the process chamber 1 during the process.

[0097] The various embodiments in this application are described in a progressive, parallel, or combined manner. Each embodiment focuses on its differences from other embodiments, and similar or identical parts between embodiments can be referred to interchangeably. The embodiments provided in this application can be combined with each other without contradiction.

[0098] It should be noted that, in the description of this application, the accompanying drawings and embodiments are illustrative rather than restrictive. The same reference numerals throughout the embodiments identify the same structures. Additionally, for ease of understanding and description, the thicknesses of some layers, films, panels, regions, etc., may be exaggerated in the drawings. It is also understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, the element may be directly on the other element or there may be intermediate elements. Furthermore, "on" means positioning an element on or below another element, but does not inherently mean positioning it above another element according to the direction of gravity.

[0099] The terms "upper," "lower," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this application and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. When a component is considered to be "connected" to another component, it can be directly connected to the other component or there may be a component positioned centrally in the middle.

[0100] It should also be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that an article or apparatus comprising a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such an article or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the article or apparatus that includes the aforementioned element.

[0101] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A multi-ion source processing device, characterized in that, include: Process chambers; A stage is disposed at the bottom of the process chamber, and the stage has a bearing surface for placing the workpiece to be processed; The platform can rotate along a first axis perpendicular to the center of the bearing surface, and can also rotate along a second axis parallel to the bearing surface; A first ion source is movably mounted on the top of the process chamber and is capable of emitting a first ion beam, the irradiation area of ​​which covers a local area of ​​the bearing surface. A second ion source is installed at the top of the process chamber and is capable of emitting a second ion beam, the irradiation area of ​​which at least covers the bearing surface.

2. The multi-ion source processing device according to claim 1, characterized in that, Both the first ion source and the second ion source are connected to a physical property gas source; The first ion source, based on the physical property gas input by the physical property gas source, emits the first ion beam with physical processing characteristics, which is used to perform local etching treatment on the surface of the workpiece to be processed. The second ion source, based on the physical property gas input by the physical property gas source, emits a second ion beam with physical processing characteristics, which is used to perform full-surface etching on the surface of the workpiece to be processed. Wherein, the energies of the first ion beam and the second ion beam are both greater than the bond energies between the bulk atoms of the workpiece to be processed.

3. The multi-ion source processing device according to claim 1, characterized in that, The first ion source is connected to the modified gas source, and the second ion source is connected to the physical property gas source; The first ion source, based on the modified gas supplied by the modified gas source, emits a first ion beam with chemical processing characteristics, which is used to perform modification treatment on a preset area of ​​the surface of the workpiece to be treated, and forms a modified layer in the preset area. The second ion source, based on the physical property gas input from the physical property gas source, emits a second ion beam with physical processing characteristics, which is used to etch and remove the modified layer. Wherein, the energy of the second ion beam is less than the bond energy between the bulk atoms of the workpiece to be treated and the bond energy between the modified atoms in the modified layer and the surface atoms of the workpiece to be treated, but greater than the bond energy between the surface atoms of the workpiece to be treated and the bulk atoms of the workpiece to be treated.

4. The multi-ion source processing device according to claim 1, characterized in that, The first ion source is a focused ion source, and the second ion source is a planar ion source or a beam-expanding ion source.

5. The multi-ion source processing device according to claim 1, characterized in that, The first ion source is mounted on the top of the process chamber via a first driving device, which enables the first ion source to move relative to the stage. The stage is mounted at the bottom of the process chamber via a second drive device, which enables the stage to rotate based on the first axis and the second axis.

6. The multi-ion source processing device according to claim 5, characterized in that, The first driving device enables the first ion source to move on a preset plane and can also adjust the emission direction of the first ion beam.

7. The multi-ion source processing device according to claim 5, characterized in that, The first driving device includes: a first motion axis; a second motion axis perpendicularly intersecting the first motion axis, the first ion source being mounted on the second motion axis; and the second motion axis being capable of moving along the first motion axis.

8. The multi-ion source processing device according to claim 5, characterized in that, The first driving device can control the first ion source to move along a horizontal line from one side of the workpiece to be processed to the other side.

9. The multi-ion source processing device according to claim 1, characterized in that, The second ion source is fixedly installed on the top of the process chamber, and the ion beam emission direction of the second ion source has an angle with the vertical direction.

10. The multi-ion source processing device according to claim 1, characterized in that, The ion beam emission directions of the first ion source and the second ion source are respectively angled with the vertical direction, and the angles corresponding to the first ion source and the second ion source are not equal.

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