Silicon capacitor electrode structure and silicon capacitor

Abstract

The utility model discloses a silicon capacitor electrode structure and a silicon capacitor, which can further improve the capacitance of a capacitor in a limited space by nesting, combining and arranging a plurality of groups of element arrays distributed in a triangular grid mode more reasonably and precisely, so that the capacitor can store more charges.

Description

Technical Field

[0001] This invention belongs to the field of micro-nano technology, specifically relating to a silicon capacitor electrode structure and a silicon capacitor. Background Technology

[0002] In the field of micro / nano technology, the cost per square meter of semiconductor substrate area and the demand for capacitors are constantly increasing in applications requiring large capacitance. To increase capacitance density, the aspect ratio of the cylinders can be increased, where aspect ratio is defined as the ratio of its length to the smallest cross-sectional dimension perpendicular to its length direction. Strategies for increasing capacitance density include increasing the length of the cylinders or decreasing their cross-sectional dimensions or floor space, thus placing more cylinders on the same substrate area. However, circular cylinders with high aspect ratios are prone to breakage and / or tipping under shear forces, such as those that may occur during handling and / or processing. Existing electrode designs often fail to meet the requirements for electrode surface area and structural stability in specific applications, thus limiting the application areas of capacitors. Furthermore, existing electrode designs have inefficient arrangements on the substrate, resulting in high equivalent series resistance (ESR) of the formed electrode structure.

[0003] The information disclosed in this background section is intended only to enhance the understanding of the overall background of this utility model and should not be construed as an admission or in any way implying that the information constitutes prior art known to those skilled in the art. Utility Model Content

[0004] The purpose of this invention is to provide a silicon capacitor electrode structure and a silicon capacitor, which can improve the capacitance of the capacitor, reduce the equivalent series resistance, and meet application requirements.

[0005] To achieve the above objectives, the technical solution provided by a specific embodiment of this utility model is as follows:

[0006] A silicon capacitor electrode structure, comprising:

[0007] The substrate has a first surface;

[0008] A first primitive array is formed on a first surface of the substrate. The first primitive array includes a plurality of first primitives distributed in a first triangular grid. Each first primitive includes a column protruding from the first surface and / or a hole recessed in the first surface. Each first primitive includes a first main body A and a first main body B located at both ends and a first connecting part connecting the first main body A and the first main body B. The center point of the first main body A in the first primitive constitutes the grid point of the first triangular grid.

[0009] A second primitive array is formed on the first surface of the substrate. The second primitive array includes a plurality of second primitives distributed in a second triangular grid. Each second primitive includes a column protruding from the first surface and / or a hole recessed in the first surface. Each second primitive includes a second main body A and a second main body B located at both ends, and a second connecting part connecting the second main body A and the second main body B. The center point of the second main body A in the second primitive constitutes the grid point of the second triangular grid.

[0010] Wherein, the size of the first triangular mesh is the same as the size of the second triangular mesh, any grid point of the first triangular mesh does not coincide with any grid point of the second triangular mesh, and the grid point of the first triangular mesh is located on the grid line of the second triangular mesh;

[0011] The second primitive has the same size as the first primitive. The second primitive is formed by translating the first primitive. The first primitive and the second primitive are not in contact with each other.

[0012] In one or more embodiments of this utility model, the grid points of the second triangular grid are located at the n-th bisector of the grid line of a cell of the first triangular grid, where n is a constant.

[0013] In one or more embodiments of this utility model, the first main body portion A is configured with a diameter of R. A1 A cylinder or a round hole;

[0014] The first main body portion B is configured with a diameter of R B1 A cylinder or a round hole;

[0015] The first connecting portion has a length R perpendicular to the line connecting the centers of the first main body portion A and the first main body portion B. w1 ;

[0016] The first element has a length R along the line connecting the centers of the first main body A and the first main body B. l1 ;

[0017] Among them, R A1 =R B1 =R w1 And R l1 =nR A1 =nR B1 n is a constant.

[0018] In one or more embodiments of the present invention, the first triangular mesh includes isosceles or equilateral triangular mesh cells having cells ABC.

[0019] In one or more embodiments of this utility model, the second main body portion A is configured with a diameter of R. A2 A cylinder or a round hole;

[0020] The second main body part B is configured with a diameter of R B2 A cylinder or a round hole;

[0021] The second connecting portion has a length R perpendicular to the line connecting the centers of the second main body portion A and the second main body portion B. w2 ;

[0022] The second element has a length R in the direction of the line connecting the centers of the second main body A and the second main body B. l2 ;

[0023] Among them, R A2 =R B2 =R w2 And R l2 =nR A2 =nR B2 n is a constant.

[0024] In one or more embodiments of the present invention, the second triangular mesh includes isosceles or equilateral triangular mesh cells having cells A'B'C'.

[0025] In one or more embodiments of the present invention, a third primitive array is further included. The third primitive array is formed on the first surface of the substrate. The third primitive array includes a plurality of third primitives distributed in a third triangular grid. The third primitives include a column protruding from the first surface and / or a hole recessed in the first surface. Each third primitive includes a third main body A and a third main body B located at both ends and a third connecting part connecting the third main body A and the third main body B. The center point of the third main body A in the third primitive constitutes the grid point of the third triangular grid.

[0026] Wherein, the size of the third triangular mesh is the same as the size of the second triangular mesh and the size of the first triangular mesh, and any grid point of the third triangular mesh does not coincide with any grid point of the first triangular mesh and any grid point of the second triangular mesh, and the grid point of the third triangular mesh is located on the grid line of the first triangular mesh and the grid line of the second triangular mesh;

[0027] The third element has the same size as the second element and the first element. The third element is formed by translating the second element or the first element. The third element is not in contact with either the first element or the second element.

[0028] In one or more embodiments of this utility model, the grid points of the third triangular grid are located at the n-th bisector of the grid line of a cell of the second triangular grid, where n is a constant, and the grid points of the third triangular grid are located at the n-th bisector of the grid line of a cell of the first triangular grid, where n is a constant.

[0029] In one or more embodiments of this utility model, the third main body portion A is configured with a diameter of R. A3 A cylinder or a round hole;

[0030] The third main body portion B is configured with a diameter of R. B3 A cylinder or a round hole;

[0031] The third connecting portion has a length R perpendicular to the line connecting the centers of the third main body portion A and the third main body portion B. w3 ;

[0032] The third element has a length R in the direction of the line connecting the centers of the third main body A and the third main body B. l3 ;

[0033] Among them, R A3 =R B3 =R w3 And R l3 =nR A3 =nR B3 n is a constant.

[0034] In one or more embodiments of the present invention, the third triangular mesh comprises isosceles or equilateral triangular mesh cells having cells A”B”C”.

[0035] A silicon capacitor, comprising the silicon capacitor electrode structure described above.

[0036] Compared with the prior art, the silicon capacitor electrode structure and silicon capacitor of this invention, through a more reasonable and precise nested combination of multiple sets of basic arrays distributed in a triangular grid, can further improve the capacitance of the capacitor in a limited space, enabling it to store more charge. Attached Figure Description

[0037] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0038] Figure 1This is a schematic diagram of the planar topography of the silicon capacitor electrode structure in one embodiment of the present invention;

[0039] Figure 2 yes Figure 1 Enlarged portion of the image;

[0040] Figure 3 This is a simulation diagram of the capacitance density of the silicon capacitor electrode structure according to an embodiment of the present invention and the electrode structure of the triangular star model in the prior art.

[0041] Figure 4 This is a simulation diagram of the equivalent series resistance (ESR) of the silicon capacitor electrode structure according to an embodiment of the present invention and the electrode structure of the triangular star model in the prior art.

[0042] Figure 5 This is a diagram illustrating the electrode structure of a trident-shaped columnar model in the prior art. Detailed Implementation

[0043] To enable those skilled in the art to better understand the technical solutions of this utility model, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort should fall within the protection scope of this utility model.

[0044] like Figure 1 As shown, the silicon capacitor electrode structure in one embodiment of the present invention includes: a substrate 10, a first element array, and a second element array.

[0045] The substrate 10 has a first surface and serves as a support for the first and second primitive arrays, as well as other subsequent primitive arrays. A three-dimensional Cartesian coordinate system is established on the first surface of the substrate 10 as the bottom plane. The horizontal direction is defined as the x-direction, the vertical direction is defined as the y-direction, and the direction perpendicular to the first surface is defined as the z-direction.

[0046] The first element array is formed on the first surface of the substrate 10. The first element array includes a plurality of first elements 21.

[0047] like Figure 2 As shown, the first element 21 extends from the first surface in the z-direction, and the extension length is L. Z1The first element 21 is part of the electrode structure. Each first element 21 includes a first main body portion A211 and a first main body portion B212 located at both ends in a direction parallel to the first surface, and a first connecting portion 213 connecting the first main body portion A211 and the first main body portion B212. In the z-direction, the first main body portion A211 and the first main body portion B212 have the same length, both being L. Z1 In the z-direction, the length of the first connecting portion 213 is the same as the lengths of the first main body portion A211 and the first main body portion B212, both being L. Z1 .

[0048] It is understood that the z-direction includes the convex direction of the first surface and the concave direction of the first surface, so the first element 21 can be a column protruding from the first surface and / or a hole recessed in the first surface.

[0049] Preferably, the first main body portion A211 is configured with a diameter of R. A1 The structure is a circular cylindrical structure or a circular hole structure; the first main body B212 is constructed with a diameter of R. B1 The structure is a circular cylindrical structure or a circular hole structure; the first connecting part 213 has a length R perpendicular to the line connecting the centers of the first main body part A211 and the first main body part B212. w1 The first element 21 has a length R in the direction of the line connecting the centers of the first main body A211 and the first main body B212 (in the y direction in Figure 1). l1 , where R A1 =R B1 =R w1 And R l1 =nR A1 =nR B1 n is a constant.

[0050] Multiple first primitives 21 are distributed in a first triangular grid on the first surface of the base 10. The center point of the first main body A211 in each first primitive 21 constitutes a grid point of the first triangular grid. It can be understood that the center points of the first main body A211 in three adjacent first primitives 21 in two adjacent rows constitute the three vertices A, B, and C of cell ABC. Therefore, the first triangular grid can include a triangular grid with multiple cells ABC. Preferably, the first triangular grid includes isosceles or equilateral triangular grid cells with cells ABC, i.e., cells ABC are isosceles or equilateral triangles.

[0051] Among them, in order to match the length R of the first main body A211, the first main body B212 and the first basic element 21 l1The proportional relationship is adapted to maximize the capacitance of the capacitor. In a preferred embodiment, in the triangular cell ABC formed by the center point of the first main body A211 in the first element 21, the vertical distance from cell point A to side BC is set to L. a1 The length of side BC is set to L. bc1 L a1 Greater than R l1 L bc1 Greater than R w1 .

[0052] like Figure 1 As shown, a second primitive array is formed on the first surface of the substrate 10. The second primitive array includes a plurality of second primitives 31.

[0053] like Figure 2 As shown, the second element 31 extends from the first surface in the z-direction, and the extension length is L. Z2 The second element 31 is part of the electrode structure. Each second element 31 includes a second main body portion A311 and a second main body portion B312 located at both ends in a direction parallel to the first surface, and a second connecting portion 313 connecting the second main body portion A311 and the second main body portion B312. In the z-direction, the second main body portion A311 and the second main body portion B312 have the same length, both being L. Z2 In the z-direction, the length of the second connecting portion 313 is the same as the length of the second main body portion A311 and the second main body portion B312, both being L. Z2 .

[0054] It is understood that the z-direction includes the convex direction of the first surface and the concave direction of the first surface, so the second element 31 can be a column protruding from the first surface and / or a hole recessed in the first surface.

[0055] Preferably, the second main body A311 is configured with a diameter of R. A2 The structure is a circular cylindrical structure or a circular hole structure; the second main body B312 is constructed with a diameter of R. B2 The structure is a circular cylindrical structure or a circular hole structure; the second connecting part 313 has a length R perpendicular to the line connecting the centers of the second main body part A311 and the second main body part B312. w2 The second element 31 has a length R in the direction of the line connecting the centers of the second main body A311 and the second main body B312 (in the y direction in Figure 1). l2 , where R A2 =R B2 =R w2 And R l2 =nR A2 =nR B2 n is a constant.

[0056] Multiple second primitives 31 are distributed in a second triangular grid on the first surface of the base 10. The center point of the second main body A311 within each second primitive 31 constitutes a grid point of the second triangular grid. It can be understood that the center points of the second main body A311 in three adjacent second primitives 31 in two adjacent rows constitute the three vertices A', B', and C' of cell A'B'C'. Therefore, the second triangular grid can include a triangular grid with multiple cells A'B'C'. Preferably, the second triangular grid includes isosceles or equilateral triangular grid cells with cells A'B'C', i.e., cells A'B'C' are isosceles or equilateral triangles.

[0057] Among them, in order to match the length R of the second main body A311, the second main body B312 and the second basic element 31 l2 To ensure the proportional relationship is appropriate and maximize the capacitance of the capacitor, in a preferred embodiment, in the triangular cell A'B'C' formed by the center point of the second main body A311 in the second element 31, the vertical distance from cell point A' to edge B'C' is set to L. a’2 The length of edge B'C' is set to L. b’c’2 L a’2 Greater than R l2 L b’c’2 Greater than R w2 .

[0058] On the first surface of the substrate 10, a first triangular mesh formed by a first primitive array and a second triangular mesh formed by a second primitive array are nested together. The equilateral or isosceles triangular meshes with cells ABC in the first triangular mesh are the same size as the equilateral or isosceles triangular meshes with cells A'B'C' in the second triangular mesh. No grid point of the first triangular mesh—that is, the first main body A211 of the first primitive 21—is coincident with any grid point of the second triangular mesh—that is, the second main body A311 of the second primitive 31—and the grid points of the first triangular mesh are located on the grid lines of the second triangular mesh.

[0059] Preferably, cell point A' in cell A'B'C' of the second triangular grid is located at the center of side AB in cell ABC of the first triangular grid or at the n-dividing line, where n is a constant.

[0060] On the first surface of the substrate 10, the first element 21 and the second element 31 are not in contact with each other.

[0061] In one embodiment, the line connecting the centers of the first main body portion A211 and the first main body portion B212 in the first basic unit 21 is parallel to the line connecting the centers of the second main body portion A311 and the second main body portion B312 in the second basic unit 31.

[0062] Preferably, the size of the second primitive 31 is exactly the same as the size of the first primitive 21, and the second primitive 31 can be regarded as being formed by translating the first primitive 21 as a whole, with the translation direction being the straight line direction of the grid line of the first triangular grid formed by the array of first primitives.

[0063] In the above embodiments, the silicon capacitor electrode structure includes two sets of element arrays. Of course, the silicon capacitor electrode structure can also include three sets of element arrays. The first element in the first element array and the second element in the second element array are the same as in the above embodiments, and will not be elaborated upon in this embodiment.

[0064] refer to Figure 1 As shown, a third element array is formed on the first surface of the substrate 10. The third element array includes a plurality of third elements 41.

[0065] refer to Figure 2 As shown, the third element 41 extends from the first surface in the z-direction, and the extension length is L. Z3 The third element 41 is part of the electrode structure. Each third element 41 includes a third main body portion A411 and a third main body portion B412 located at both ends in a direction parallel to the first surface, and a third connecting portion 413 connecting the third main body portion A411 and the third main body portion B412. In the z-direction, the third main body portion A411 and the third main body portion B412 have the same length, both being L. Z3 In the z-direction, the length of the third connecting part 413 is the same as the lengths of the third main body part A411 and the third main body part B412, both being L. Z3 .

[0066] It is understood that the z-direction includes the convex direction of the first surface and the concave direction of the first surface, so the third element 41 can be a column protruding from the first surface and / or a hole recessed in the first surface.

[0067] Preferably, the third main body A411 is configured with a diameter of R A3 The structure is a circular cylindrical structure or a circular hole structure; the third main body B412 is constructed with a diameter of R. B3 The structure is a circular cylindrical structure or a circular hole structure; the third connecting part 413 has a length R perpendicular to the line connecting the centers of the third main body part A411 and the third main body part B412. w3 The third element 41 has a length R in the direction of the line connecting the centers of the third main body A411 and the third main body B412 (in the y direction in Figure 1). l3 , where R A3 =R B3 =R w3 And R l3 =nRA3 =nR B3 n is a constant.

[0068] Multiple third primitives 41 are distributed in a third triangular grid on the first surface of the base 10. The center point of the third main body A411 within each third primitive 41 constitutes a grid point of the third triangular grid. It can be understood that the center points of the third main body A411 in three adjacent third primitives 41 in two adjacent rows constitute the three vertices A", B", and C" of cell A”B”C”. Therefore, the third triangular grid can include a triangular grid with multiple cells A”B”C”. Preferably, the third triangular grid includes isosceles or equilateral triangular grid cells with cells A”B”C”, i.e., cells A”B”C” are isosceles or equilateral triangular grid cells.

[0069] Among them, in order to match the length R of the third main body A411, the third main body B412 and the third basic element 41 l3 The proportional relationship is adapted to maximize the capacitance of the capacitor. In a preferred embodiment, in the triangular cell A”B”C” formed by the center point of the third main body A411 in the third basic unit 41, the vertical distance from cell point A” to edge B”C” is set to L. a”3 The length of side B”C” is set to L. b”c”3 L a”3 Greater than R l3 L b”c”3 Greater than R w3 .

[0070] On the first surface of the substrate 10, a first triangular mesh formed by a first primitive array, a second triangular mesh formed by a second primitive array, and a third triangular mesh formed by a third primitive array are nested together. The equilateral or isosceles triangular meshes with cells ABC in the first triangular mesh, the equilateral or isosceles triangular meshes with cells A'B'C' in the second triangular mesh, and the equilateral or isosceles triangular meshes with cells A”B”C” in the third identical triangular mesh have the same size. Any grid point of the first triangular mesh—that is, the first main body A211 of the first primitive 21—is not paired with any grid point of the second triangular mesh—that is, the second main body A311 of the second primitive 31—and any grid point of the third triangular mesh—that is, the third main body A411 of the third primitive 41—are not overlapping, and the grid points of the third triangular mesh are located on the grid lines of the first and second triangular meshes.

[0071] Preferably, cell point A” in cell A”B”C” of the third triangular grid is located at the center of side AC in cell ABC of the first triangular grid or at the nth bisector, where n is a constant, and cell point B” in cell A”B”C” of the third triangular grid is located at the center of side B’C’ in cell A’B’C’ of the second triangular grid or at the nth bisector, where n is a constant.

[0072] On the first surface of the substrate 10, the first element 21, the second element 31, and the third element 41 are also arranged without contact between each other.

[0073] In one embodiment, the line connecting the centers of the first main body portion A211 and the first main body portion B212 in the first basic unit 21 is parallel to the line connecting the centers of the second main body portion A311 and the second main body portion B312 in the second basic unit 31 and the line connecting the centers of the third main body portion A411 and the third main body portion B412 in the third basic unit 41.

[0074] Preferably, the size of the third primitive 41 is exactly the same as the size of the first primitive 21, and the third primitive 41 can be regarded as being formed by translating the first primitive 21 as a whole, with the translation direction being the straight line direction of the grid line of the first triangular grid formed by the array of first primitives.

[0075] In the above embodiments, the silicon capacitor electrode structure includes three sets of element arrays. Of course, the silicon capacitor electrode structure may also include four or more sets of element arrays. All sets of element arrays are of the same size, and each subsequent set of element arrays can be formed by translating the first element array as a whole.

[0076] refer to Figure 3 As shown, Figure 3 The silicon capacitor electrode structure in the embodiments of this application and the electrode structure of the tridented star model in the prior art (such as...) Figure 5 The capacitance density simulation diagram is shown below. Figure 5 In the electrode structure of the tridented star pillar model shown, the dimensions of individual pillars within the tridented star pillar primitives are consistent with the primitive dimensions in this embodiment. In this embodiment, three nested arrays of identical primitives are used, where the primitive dimensions are all: R l1 =5R A1 =5R B1 .from Figure 3 As can be seen, Cthis implementation = 5.92nF / mm2@1GHz, and Ctriangular pillar = 4.45nF / mm2@1GHz.

[0077] refer to Figure 4 As shown, Figure 4 The silicon capacitor electrode structure in the embodiments of this application and the electrode structure of the tridented star model in the prior art (such as...) Figure 5 The simulation diagram of the equivalent series resistance (ESR) is shown below. Figure 5 In the electrode structure of the tridented star pillar model shown, the dimensions of individual pillars within the tridented star pillar primitives are consistent with the primitive dimensions in this embodiment. In this embodiment, three nested arrays of identical primitives are used, where the primitive dimensions are all: R l1 =5R A1 =5R B1 .from Figure 4 As can be seen, the ESR in this implementation method is 4.9 mohm@SRF, and the ESR triangular pillar is 2.5 mohm@SRF.

[0078] Therefore, it can be concluded that the silicon capacitor formed by the silicon capacitor electrode structure in this application has a higher capacitance per unit area and a lower equivalent series resistance compared to the silicon capacitor formed by the electrode structure of the triangular star model in the conventional technology.

[0079] It is understood that the silicon capacitor structure can be obtained by fabricating subsequent layer structures on the first surface of the substrate and the outer surface of the basic unit of the aforementioned silicon capacitor electrode structure (using conventional methods). Since the fabrication of subsequent layer structures is not the focus of this application, it will not be elaborated upon here.

[0080] Compared with the prior art, the silicon capacitor electrode structure and silicon capacitor of this invention, through a more reasonable and precise nested combination of multiple sets of basic arrays distributed in a triangular grid, can further improve the capacitance of the capacitor in a limited space, enabling it to store more charge.

[0081] It will be apparent to those skilled in the art that this invention is not limited to the details of the exemplary embodiments described above, and that it can be implemented in other specific forms without departing from the spirit or essential characteristics of this invention. Therefore, the embodiments should be considered illustrative and non-limiting in all respects, and the scope of this invention is defined by the appended claims rather than the foregoing description. Thus, it is intended that all variations falling within the meaning and scope of equivalents of the claims be included within this invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0082] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A silicon capacitor electrode structure, characterized in that, include: The substrate has a first surface; A first primitive array is formed on a first surface of the substrate. The first primitive array includes a plurality of first primitives distributed in a first triangular grid. Each first primitive includes a column protruding from the first surface and / or a hole recessed in the first surface. Each first primitive includes a first main body A and a first main body B located at both ends and a first connecting part connecting the first main body A and the first main body B. The center point of the first main body A in the first primitive constitutes the grid point of the first triangular grid. A second primitive array is formed on the first surface of the substrate. The second primitive array includes a plurality of second primitives distributed in a second triangular grid. Each second primitive includes a column protruding from the first surface and / or a hole recessed in the first surface. Each second primitive includes a second main body A and a second main body B located at both ends, and a second connecting part connecting the second main body A and the second main body B. The center point of the second main body A in the second primitive constitutes the grid point of the second triangular grid. Wherein, the size of the first triangular mesh is the same as the size of the second triangular mesh, any grid point of the first triangular mesh does not coincide with any grid point of the second triangular mesh, and the grid point of the first triangular mesh is located on the grid line of the second triangular mesh; The second primitive has the same size as the first primitive. The second primitive is formed by translating the first primitive. The first primitive and the second primitive are not in contact with each other.

2. The silicon capacitor electrode structure according to claim 1, characterized in that, The grid points of the second triangular grid are located at the n-th bisector of the grid line of a cell of the first triangular grid, where n is a constant.

3. The silicon capacitor electrode structure according to claim 1, characterized in that, The first main body A is configured with a diameter of R A1 A cylinder or a round hole; The first main body portion B is configured with a diameter of R B1 A cylinder or a round hole; The first connecting portion has a length R perpendicular to the line connecting the centers of the first main body portion A and the first main body portion B. w1 ; The first element has a length R along the line connecting the centers of the first main body A and the first main body B. l1 ; Among them, R A1 =R B1 =R w1 And R l1 =nR A1 =nR B1 n is a constant.

4. The silicon capacitor electrode structure according to claim 3, characterized in that, The first triangular grid comprises isosceles or equilateral triangular grid cells with cells ABC.

5. The silicon capacitor electrode structure according to claim 1, characterized in that, The second main body A is configured with a diameter of R A2 A cylinder; The second main body part B is configured with a diameter of R B2 A cylinder or a round hole; The second connecting portion has a length R perpendicular to the line connecting the centers of the second main body portion A and the second main body portion B. w2 ; The second element has a length R in the direction of the line connecting the centers of the second main body A and the second main body B. l2 ; Among them, R A2 =R B2 =R w2 And R l2 =nR A2 =nR B2 n is a constant.

6. The silicon capacitor electrode structure according to claim 5, characterized in that, The second triangular grid comprises isosceles or equilateral triangular grid cells with cells A'B'C'.

7. The silicon capacitor electrode structure according to claim 1, characterized in that, It also includes a third primitive array, which is formed on the first surface of the substrate. The third primitive array includes a plurality of third primitives distributed in a third triangular grid. The third primitives include a column protruding from the first surface and / or a hole recessed in the first surface. Each third primitive includes a third main body A and a third main body B located at both ends and a third connecting part connecting the third main body A and the third main body B. The center point of the third main body A in the third primitive constitutes the grid point of the third triangular grid. Wherein, the size of the third triangular mesh is the same as the size of the second triangular mesh and the size of the first triangular mesh, and any grid point of the third triangular mesh does not coincide with any grid point of the first triangular mesh and any grid point of the second triangular mesh, and the grid point of the third triangular mesh is located on the grid line of the first triangular mesh and the grid line of the second triangular mesh; The third element has the same size as the second element and the first element. The third element is formed by translating the second element or the first element. The third element is not in contact with either the first element or the second element.

8. The silicon capacitor electrode structure according to claim 7, characterized in that, The grid points of the third triangular grid are located at the nth bisector of the grid line of a cell of the second triangular grid, where n is a constant, and the grid points of the third triangular grid are located at the nth bisector of the grid line of a cell of the first triangular grid, where n is a constant.

9. The silicon capacitor electrode structure according to claim 7, characterized in that, The third main body A is configured with a diameter of R. A3 A cylinder or a round hole; The third main body portion B is configured with a diameter of R. B3 A cylinder or a round hole; The third connecting portion has a length R perpendicular to the line connecting the centers of the third main body portion A and the third main body portion B. w3 ; The third element has a length R in the direction of the line connecting the centers of the third main body A and the third main body B. l3 ; Among them, R A3 =R B3 =R w3 And R l3 =nR A3 =nR B3 n is a constant.

10. The silicon capacitor electrode structure according to claim 9, characterized in that, The third triangular grid comprises isosceles or equilateral triangular grid cells with cells A”B”C”.

11. A silicon capacitor, characterized in that, Includes the silicon capacitor electrode structure as described in any one of claims 1-10.

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