Hybrid exposure system and photoetching equipment

Abstract

The utility model relates to the technical field of photoetching, in particular to a mixed exposure system and photoetching equipment, which comprises a first exposure device, a second exposure device, a third exposure device and a fourth exposure device, electron beams emitted by the electron beam emission source can be projected to a first irradiation area of the vacuum chamber after passing through the electron light path assembly and the scanning system; the second exposure device comprises an optical exposure light source and an optical light path assembly, and light beams emitted by the optical exposure light source can be projected to a second irradiation area of the vacuum chamber after passing through the optical light path assembly; the moving table is arranged in the vacuum chamber and is provided with a sample bearing position; the driving device is in transmission connection with the moving table and can drive the moving table to move so that the sample bearing position can be located in the first irradiation area or the second irradiation area. According to the invention, photoetching tasks with high precision and high efficiency requirements can be considered at the same time.

Description

TECHNICAL FIELD

[0001] The utility model relates to the field of photoetching, especially relates to a hybrid exposure system and photoetching equipment. BACKGROUND

[0002] Electron-beam lithography (EBL) is a maskless lithography technology that uses a focused electron beam to draw micro-nano structures on the surface of photoresist. The wavelength of the electron beam is much shorter than that of a photon, enabling higher resolution and high flexibility, and can be applied to a variety of materials. In fields requiring ultra-fine structures and customized designs, such as nanoelectronics, biosensors, and quantum computing, EBL is an indispensable tool. However, EBL has low production efficiency and limited write field size, making it unsuitable for mass production. SUMMARY

[0003] To solve the above technical problems, the utility model provides a hybrid exposure system and photoetching equipment, which can realize high-precision and high-efficiency photoetching.

[0004] The utility model provides a hybrid exposure system on one aspect, including:

[0005] The first exposure device includes a vacuum chamber, an electron beam emission source, an electron optical path assembly, and a scanning system located in the vacuum chamber. The electron beam emitted by the electron beam emission source can be projected to the first irradiation area of the vacuum chamber after passing through the electron optical path assembly and the scanning system.

[0006] The second exposure device includes an optical exposure light source and an optical optical path assembly. The light beam emitted by the optical exposure light source can be projected to the second irradiation area of the vacuum chamber after passing through the optical optical path assembly.

[0007] The motion stage is provided in the vacuum chamber and has a sample carrying position.

[0008] The driving device is in driving connection with the motion stage and can drive the motion stage to move so that the sample carrying position is located in the first irradiation area or the second irradiation area.

[0009] Specifically, the second exposure device is located in the inner cavity of the vacuum chamber, and the light beam can be transmitted in the vacuum chamber and projected to the second irradiation area after passing through the optical optical path assembly.

[0010] Specifically, the vacuum chamber has an optical window on the chamber wall, and the second exposure device is located outside the vacuum chamber. The light beam can be projected to the second irradiation area through the optical window.

[0011] Specifically, the second exposure device further comprises an illumination light source and a second image acquisition device;

[0012] The illumination light emitted by the illumination light source can be projected to the second irradiation area after passing through the optical light path assembly, and the illumination light reflected by the sample in the second irradiation area can be projected to the second image acquisition device after passing through the optical light path assembly.

[0013] Specifically, the optical path of the light beam emitted by the optical exposure light source and the optical path of the light beam of the illumination light are at least partially shared.

[0014] Specifically, the optical light path assembly comprises a first light path assembly and a second light path assembly;

[0015] The light beam emitted by the optical exposure light source can be projected to the second irradiation area after passing through the first light path assembly, the illumination light can be projected to the second irradiation area after passing through the second light path assembly and the first light path assembly in sequence, and the illumination light reflected by the sample in the second irradiation area can be projected to the second image acquisition device after passing through the first light path assembly and the second light path assembly in sequence; or,

[0016] The light beam emitted by the optical exposure light source can be projected to the second irradiation area after passing through the second light path assembly and the first light path assembly in sequence, the illumination light can be projected to the second irradiation area after passing through the first light path assembly, and the illumination light reflected by the sample in the second irradiation area can be projected to the second image acquisition device after passing through the first light path assembly and the second light path assembly in sequence.

[0017] Specifically, the optical exposure light source, the illumination light source and the optical light path assembly are located in the inner cavity of the vacuum chamber, and the second image acquisition device is located outside the vacuum chamber;

[0018] The illumination light reflected by the sample in the second irradiation area can be projected to the second image acquisition device after passing through the optical light path assembly and the optical window of the vacuum chamber.

[0019] Specifically, the optical exposure light source and the first light path assembly are located in the inner cavity of the vacuum chamber, and the illumination light source, the second light path assembly and the second image acquisition device are located outside the vacuum chamber;

[0020] The light beam emitted by the optical exposure light source can be transmitted in the vacuum chamber and projected to the second irradiation area after passing through the first optical light path assembly;

[0021] The illumination light can be projected to the second irradiation area through the second optical path assembly, the optical window of the vacuum chamber and the first optical path assembly in sequence, and the illumination light reflected by the sample in the second irradiation area can be projected to the second image acquisition device through the first optical path assembly, the optical window and the second optical path assembly in sequence.

[0022] Specifically, the first optical path assembly comprises a first light splitting member and an objective lens.

[0023] Specifically, the second optical path assembly comprises a second light splitting member.

[0024] Specifically, the first light splitting member can reflect the light beam emitted by the optical exposure light source and transmit the illumination light, and the second light splitting member can reflect the illumination light emitted by the illumination light source and transmit the illumination light reflected by the sample to be etched.

[0025] The light beam emitted by the optical exposure light source can be reflected by at least the first light splitting member and focused by the objective lens and then projected to the second irradiation area, the illumination light emitted by the illumination light source can be reflected by at least the second light splitting member, transmitted by the first light splitting member and focused by the objective lens and then projected to the second irradiation area, and the illumination light reflected by the sample to be etched can be transmitted by at least the objective lens, the first light splitting member and the second light splitting member and then projected to the second image acquisition device.

[0026] Specifically, the first light splitting member can transmit the light beam emitted by the optical exposure light source and the illumination light reflected by the sample to be etched and reflect the illumination light emitted by the illumination light source, and the second light splitting member can reflect the light beam emitted by the optical exposure light source and transmit the illumination light reflected by the sample to be etched.

[0027] The light beam emitted by the optical exposure light source can be reflected by at least the second light splitting member, transmitted by the first light splitting member and focused by the objective lens and then projected to the second irradiation area, the illumination light emitted by the illumination light source can be reflected by at least the first light splitting member and focused by the objective lens and then projected to the second irradiation area, and the illumination light reflected by the sample to be etched can be transmitted by at least the objective lens, the first light splitting member and the second light splitting member and then projected to the second image acquisition device.

[0028] Specifically, the optical exposure light source is a laser light source.

[0029] Specifically, the layer to be etched of the sample to be etched has a photoresist sensitive to both the light beam emitted by the optical exposure light source and the electron beam emitted by the electron beam emission source, and the driving device can drive the movement platform to move so that the photoresist is located in the first irradiation area or the second irradiation area.

[0030] Specifically, the layer to be etched of the sample to be etched has a first photoresist sensitive to the electron beam emitted by the electron beam emission source and a second photoresist sensitive to the light beam emitted by the optical exposure light source; the driving device can drive the moving platform to move so that the first photoresist is located in the first irradiation area or the second photoresist is located in the second irradiation area.

[0031] The utility model provides a kind of photolithography equipment on the other hand, the photolithography equipment includes the hybrid exposure system as described above.

[0032] The utility model embodiment is implemented, with following beneficial effects:

[0033] The exposure system of the present application includes a first exposure device and a second exposure device. An electron beam is provided by an electron beam emission source and projected to a first irradiation area of a vacuum chamber through an electron optical path assembly and a scanning system. A light beam is provided by an optical exposure light source and projected to a second irradiation area of the vacuum chamber through an optical optical path assembly. A driving device is provided to drive the moving platform to move to the first irradiation area or the second irradiation area. Then, the same sample to be etched is patterned by the two exposure sources in the same machine. The exposure system can meet the requirements of high precision and high efficiency for photolithography tasks at the same time, ensure high resolution of the photolithography pattern, improve the photolithography speed and the field size, and realize high-quality large-scale semiconductor device production. BRIEF DESCRIPTION OF DRAWINGS

[0034] To more clearly illustrate the technical solutions of the utility model, the following will briefly introduce the drawings needed in the embodiments or prior art description. Obviously, the drawings in the following description are only some embodiments of the utility model, and those skilled in the art can obtain other drawings according to these drawings without creative labor.

[0035] Figure 1 A structure diagram of a hybrid exposure system according to an embodiment of the utility model is shown in Figure 1.

[0036] Figure 2 A structure diagram of another hybrid exposure system according to an embodiment of the utility model is shown in Figure 2.

[0037] Figure 3 A structure diagram of another hybrid exposure system according to an embodiment of the utility model is shown in Figure 3.

[0038] Figure 4 A structure diagram of another hybrid exposure system according to an embodiment of the utility model is shown in Figure 4.

[0039] Figure 5A structure schematic view of another hybrid exposure system provided by the embodiment of the present utility model;

[0040] Figure 6 A flow chart of an etching method provided by the embodiment of the present utility model;

[0041] Figure 7 Another top view of a sample to be etched in the etching method provided by the embodiment of the present utility model;

[0042] Figure 8 Another top view of a sample to be etched in the etching method provided by the embodiment of the present utility model;

[0043] In the figure, the reference signs correspond to:

[0044] 1-substrate, 2-layer to be etched, 3-first pattern, 4-second pattern, 10-first exposure device, 20-second exposure device, 30-moving table, 40-base, 50-electron beam, 110-vacuum chamber, 120-electron beam emission source, 130-electronic optical path assembly, 140-scanning system, 150-first irradiation area, 160-second irradiation area, 170-optical window, 210-optical exposure light source, 220-optical optical path assembly, 221-first optical path assembly, 221a-first light splitting element, 222-second optical path assembly, 222a-second light splitting element, 223-objective lens, 230-illumination light source, 240-second image acquisition device. DETAILED DESCRIPTION

[0045] The technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the drawings in the embodiments of the present utility model. Obviously, the described embodiments are only part of the embodiments of the present utility model, rather than all the embodiments. Based on the embodiments in the present utility model, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present utility model.

[0046] It should be noted that the terms "first", "second" and the like in the specification and claims of the present utility model and the above-mentioned drawings are used to distinguish similar objects, and do not necessarily indicate a specific order or sequence. It should be understood that the data thus used can be interchanged under appropriate circumstances, so that the embodiments of the present utility model described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion.

[0047] In the description of the utility model, it is necessary to explain, unless another explicit provision and limitation, term "installation", "arrangement", "connection" should do broad sense understanding, for example, can be fixed connection, also can be detachable connection, or integrally connected, can be mechanical connection, also can be electrical connection, can be direct connection, also can through the indirect connection of intermediate medium, can be the intercommunication of two elements. For ordinary skilled in the art, the specific meaning of the above-mentioned terms in the utility model can be understood according to specific circumstances.

[0048] The utility model embodiment provides a kind of hybrid exposure system, please refer to Figures 1-5 , hybrid exposure system includes first exposure device 10, second exposure device 20, setting in vacuum chamber 110 motion platform 30 and with the driving device of motion platform 30 transmission connection.

[0049] First exposure device 10 includes vacuum chamber 110, and electron beam emission source 120, electron optical path assembly 130 and scanning system 140 in vacuum chamber 110.Electron beam emission source 120 is used for emitting electron beam 50, including electron emission gun, electron optical path assembly 130 is used for filtering based on diaphragm etc. Electron beam 50 is focused and bunched based on electromagnetic lens, to obtain the exposure electron beam that can act on the sample to be etched, scanning system 140 is used to control electron beam 50 to scan on the surface of sample to be etched.Electron beam 50 emitted by electron beam emission source 120 can be projected to the first irradiation area 150 of vacuum chamber 110 after electron optical path assembly 130 and scanning system 140, and the first irradiation area 150 refers to the area corresponding to first exposure device 10 that can place sample to be etched and carry out exposure etching to it.

[0050] Optionally, first exposure device 10 can be electron beam lithography (EBL) device.

[0051] Second exposure device 20 includes optical exposure light source 210 and optical optical path assembly 220, and optical exposure light source 210 is used to emit light beam for exposing sample to be etched, which is used to expose and develop photoresist in the form of photon, and optical optical path assembly 220 is used to bunch, focus etc. To make it form exposure light beam that can act on sample to be etched.Light beam emitted by optical exposure light source 210 can be projected to the second irradiation area 160 of vacuum chamber 110 after optical optical path assembly 220, and the second irradiation area 160 refers to the area corresponding to second exposure device 20 that can place sample to be etched and carry out exposure etching to it.

[0052] The motion stage 30 has a sample carrying position for placing a sample to be etched, which is located below the electron beam 50 exit port of the first exposure device 10 and the light beam exit port of the second exposure device 20. The motion stage can move relative to the electron beam 50 exit port and the light beam exit port to achieve the movement of the sample carrying position relative to the electron beam 50 exit port and the light beam exit port. Correspondingly, the driving device can drive the motion stage 30 to move so as to position the sample carrying position at the first irradiation area 150 or the second irradiation area 160, thereby transporting the sample to be etched to the electron beam 50 exit port for electron beam exposure or to the light beam exit port for optical exposure. When performing different etching tasks, the switching of the sample position is performed by the motion stage 30 to move to the corresponding device below for exposure etching, which reduces the complexity of the sample transportation process, thereby reducing the overlay alignment difficulty and improving the overlay accuracy.

[0053] In summary, the exposure system of the present application provides the electron beam 50 by the electron beam emitting source 120 and projects it to the first irradiation area 150 of the vacuum chamber 110 through the electron optical path assembly 130 and the scanning system 140, provides the light beam by the optical exposure light source 210 and projects it to the second irradiation area 160 of the vacuum chamber 110 through the optical optical path assembly 220, and sets the driving device to drive the motion stage 30 to move to the first irradiation area 150 or the second irradiation area 160, thereby combining the two exposure sources to perform the patterning of the same sample to be etched in the same machine, which can simultaneously meet the high-precision and high-efficiency requirements of the photolithography task, ensures the high resolution of the photolithography pattern while improving the photolithography speed and the writing field size, and realizes the high-quality large-scale production of semiconductor devices.

[0054] In some embodiments, the hybrid exposure device further includes a base 40 located below the motion stage 30 for supporting the motion stage 30, and the motion stage 30 can move relative to the base 40 under the driving action of the driving device. In a preferred embodiment, the base 40 is in sliding cooperation with the motion stage 30 to improve the movement stability and positioning accuracy of the motion stage 30.

[0055] In some embodiments, the first exposure device 10 can further include a first image acquisition device (not shown) for imaging the sample to be etched.

[0056] In some embodiments, the optical exposure light source 210 is a laser light source, preferably a laser direct writing light source. In this way, by combining the high precision of electron beam lithography and the high photolithography efficiency of laser direct writing, fine photolithography tasks can be performed by electron beam lithography, and large-area tasks can be performed by laser direct writing, thereby realizing efficient and high-precision device etching.

[0057] In some embodiments, reference is made to Figure 1 and Figure 2, the second exposure device 20 is located in the inner cavity of the vacuum chamber 110, i.e. the second exposure device 20 is located in the vacuum chamber 110 as a whole, and the first exposure device 10 and the second exposure device 20 are integrated in the optical path system in the vacuum chamber 110. The light beam can be transmitted in the vacuum chamber 110 and projected to the second irradiation area 160 after passing through the optical path assembly 220. In this way, the component integration of the hybrid exposure system is improved, the etching effect of the semiconductor device is improved, and the external environment requirement of the hybrid exposure lithography process is reduced.

[0058] In some other embodiments, referring to Figure 3 , the vacuum chamber 110 has an optical window 170 on the cavity wall, and the second exposure device 20 is located outside the vacuum chamber 110, and the light beam can be projected to the second irradiation area 160 through the optical window 170. Specifically, the optical window 170 is arranged on the cavity wall of the vacuum chamber 110 and is arranged in position with the light beam exit port of the second exposure device 20, and can transmit the light beam emitted by the optical exposure light source 210 to realize the exposure function. In this way, the volume requirement of the vacuum chamber 110 is reduced, and the interference magnetic field shielding difficulty of the electron beam emission source 120, the electron optical path assembly 130 and the scanning system 140 is reduced, and the equipment cost and maintenance difficulty are reduced.

[0059] Based on the above partial or all embodiments, in some embodiments, referring to Figures 1-5 , the second exposure device 20 further comprises an illumination light source 230 and a second image acquisition device 240. The illumination light source 230 is used to emit illumination light for irradiating the sample to be etched, for sample imaging illumination in the etching process, etc. The second image acquisition device 240 is used to acquire the image of the sample to be etched, so as to facilitate the sample area positioning and processing result detection. Specifically, the illumination light emitted by the illumination light source 230 can be projected to the second irradiation area 160 after passing through the optical path assembly 220, and the illumination light reflected by the sample in the second irradiation area 160 can be projected to the second image acquisition device 240 after passing through the optical path assembly 220. In this way, the sample image acquisition is carried out through the illumination light source 230 and the second image acquisition device 240, so as to ensure the sample overlay positioning accuracy and etching effect.

[0060] In some embodiments, referring to Figures 1-5 , the optical path of the light beam emitted by the optical exposure light source 210 and the optical path of the light beam of the illumination light are at least partially shared, so as to reduce the number of optical elements of the optical path assembly 220 and improve the equipment integration.

[0061] In some embodiments, referring to Figures 1-5 , the optical path assembly 220 comprises a first optical path assembly 221 and a second optical path assembly 222. In some cases, referring to Figure 1The first light path assembly 221 is arranged close to the light beam exit port, and the light beam emitted by the optical exposure light source 210 can be projected to the second irradiation area 160 through the first light path assembly 221. The illumination light can be projected to the second irradiation area 160 through the second light path assembly 222 and the first light path assembly 221 in sequence, and the reflected illumination light reflected by the sample in the second irradiation area 160 can be projected to the second image acquisition device 240 through the first light path assembly 221 and the second light path assembly 222 in sequence. Part of the incident light path and the reflected light path of the illumination light share the same path with part of the light path of the exposure light beam.

[0062] In one embodiment, referring to Figure 1 The first light path assembly 221 comprises a first light splitting member 221a and an objective lens 223, and the second light path assembly 222 comprises a second light splitting member 222a. The first light splitting member 221a can reflect the light beam emitted by the optical exposure light source 210 and transmit the illumination light, i.e., the illumination light emitted by the illumination light source 230 and the reflected illumination light reflected by the sample to be etched, and the second light splitting member 222a can reflect the illumination light emitted by the illumination light source 230 and transmit the reflected illumination light reflected by the sample to be etched. The light beam of the optical exposure light source 210 can be projected to the second irradiation area 160 through at least the reflection of the first light splitting member 221a and the focusing of the objective lens 223, and the illumination light can be projected to the second irradiation area 160 through at least the reflection of the second light splitting member 222a, the transmission of the first light splitting member 221a and the focusing of the objective lens 223, and the reflected illumination light reflected by the sample to be etched can be projected to the second image acquisition device 240 through at least the transmission of the objective lens 223, the first light splitting member 221a and the second light splitting member 222a.

[0063] In other cases, referring to Figure 2 The light beam emitted by the optical exposure light source 210 can be projected to the second irradiation area 160 through the second light path assembly 222 and the first light path assembly 221 in sequence, the illumination light can be projected to the second irradiation area 160 through the first light path assembly 221, and the reflected illumination light reflected by the sample in the second irradiation area 160 can be projected to the second image acquisition device 240 through the first light path assembly 221 and the second light path assembly 222 in sequence. In this way, by reasonably arranging the light path assemblies, the focusing, collimation and incidence of the exposure light beam and the alignment illumination and image acquisition of the illumination light beam are realized, and the exposure and etching effects are ensured.

[0064] In one embodiment, referring to Figure 2The first light path assembly 221 includes a first light splitting member 221a and an objective lens 223, and the second light path assembly 222 includes a second light splitting member 222a. The first light splitting member 221a is capable of transmitting the light beam emitted by the optical exposure light source 210 and the illumination light reflected by the sample to be etched, and is capable of reflecting the illumination light emitted by the illumination light source 230. The second light splitting member 222a is capable of reflecting the light beam emitted by the optical exposure light source 210, and is capable of transmitting the illumination light reflected by the sample to be etched. The light beam emitted by the optical exposure light source 210 can be at least reflected by the second light splitting member 222a, transmitted by the first light splitting member 221a, and focused by the objective lens 223, and then projected to the second irradiation area 160. The illumination light emitted by the illumination light source 230 can be at least reflected by the first light splitting member 221a, and focused by the objective lens 223, and then projected to the second irradiation area 160. The illumination light reflected by the sample to be etched can be at least transmitted by the objective lens 223, the first light splitting member 221a, and the second light splitting member 222a, and then projected to the second image acquisition device 240.

[0065] It can be understood that the figure is only one example of the device, and the first light path assembly 221 and the second light path assembly 222 can include more or fewer optical elements, and the light incidence and reflection paths can include more or fewer nodes, and are not limited by the above examples and figures.

[0066] In some embodiments, with reference to Figure 4 The optical exposure light source 210, the illumination light source 230, and the optical light path assembly 220 are located in the inner cavity of the vacuum chamber 110, and the second image acquisition device 240 is located outside the vacuum chamber 110. The illumination light reflected by the sample in the second irradiation area 160 can be projected to the second image acquisition device 240 through the optical light path assembly 220 and the optical window 170 of the vacuum chamber 110. In this way, the external environmental requirements of hybrid exposure are reduced, the exposure light beams are transmitted in the vacuum chamber 110 to the first irradiation area 150 and the second irradiation area 160, the lithography precision of the exposure electron beam 50 and the light beam is improved, and the second image acquisition device 240 is placed outside to reduce magnetic interference.

[0067] In some embodiments, with reference to Figure 5The optical exposure light source 210 and the first optical path assembly 221 are located in the inner cavity of the vacuum chamber 110, and the illumination light source 230, the second optical path assembly 222 and the second image acquisition device 240 are located outside the vacuum chamber 110; the light beam emitted by the optical exposure light source 210 can be transmitted in the vacuum chamber 110 and projected to the second irradiation area 160 after the first optical path assembly 220; the illumination light can be projected to the second irradiation area 160 in sequence through the second optical path assembly 222, the optical window 170 of the vacuum chamber 110 and the first optical path assembly 221, and the illumination light reflected by the sample in the second irradiation area 160 can be projected to the second image acquisition device 240 in sequence through the first optical path assembly 221, the optical window 170 and the second optical path assembly 222. In this way, the part of the exposure light beam with high precision requirement is integrated into the chamber, the lithography precision is improved, and the illumination and image acquisition part is placed outside the chamber, the volume of the vacuum chamber 110 is reduced, the difficulty of vacuum control in operation is reduced, and the electron beam etching precision is improved.

[0068] The following will be described in detail Figures 5-8 An etching method based on the above hybrid exposure system is introduced, which can specifically include: obtaining partition information of a to-be-etched pattern, the partition information being used to indicate a first pattern 3 (refer to Figure 7 ) exposed based on a light beam and a second pattern 4 (refer to Figure 8 ) exposed based on an electron beam 50; placing a to-be-etched sample on a sample carrying position of the motion table 30, and forming a to-be-etched layer 2 on a sample substrate 1; then, referring to Figure 6 , the motion table 30 can be driven to move to a position where the sample is located in the second irradiation area 160, and the to-be-etched layer 2 is optically exposed by the second exposure device 20 to form the first pattern 3 in the to-be-etched layer 2, and then a corresponding etching task is performed; then the motion table 30 is driven to move to a position where the sample is located in the first irradiation area 150, so that the to-be-etched layer 2 is exposed by the first exposure device 10 to form the second pattern 4 in the to-be-etched layer 2, and then a corresponding etching task is performed, so as to realize etching of different precision and area. It can be understood that the second pattern 4 can be etched first, and then the first pattern 3 can be etched, which is not limited to the above examples.

[0069] Specifically, the first pattern 3 can be a region with lower etching precision requirement and / or larger etching area, and the second pattern 3 can be a region with higher etching precision requirement and / or smaller etching area, such as Figure 7 and Figure 8 The first pattern 3 shown in the above examples is a square region with a larger area, and the second pattern 4 is a line region with a smaller area.

[0070] In some embodiments, the layer to be etched of the sample to be etched has a first photoresist sensitive to the electron beam emitted by the electron beam emitter 120 and a second photoresist sensitive to the light beam emitted by the optical exposure light source 210; the driving device is capable of driving the movement platform 30 to move so that the first photoresist is located in the first irradiation area 150 or the second photoresist is located in the second irradiation area 160. In this way, the etching is carried out in a double-layer structure, that is, one layer to be etched 2 is exposed by an electron beam, corresponding to the use of an electron beam resist; and the other layer to be etched 2 is exposed by a laser direct writing, corresponding to the use of a photoresist.

[0071] In other embodiments, the layer to be etched of the sample to be etched has a photoresist sensitive to both the light beam emitted by the optical exposure light source 210 and the electron beam emitted by the electron beam emitter 120; the driving device is capable of driving the movement platform 30 to move so that the photoresist is located in the first irradiation area 150 or the second irradiation area 160. In this way, a resist sensitive to both the electron beam 50 and the laser beam can be used in the etching process, avoiding the switching of the type of resist when switching the exposure light source during the same layer etching, thereby further improving the photoetching efficiency.

[0072] Although the utility model has been described by preferred embodiments, the utility model is not limited to the embodiments described herein, and various changes and variations made without departing from the scope of the utility model.

[0073] In this article, the front, back, up, down and other orientation words are defined by the position of the parts in the drawing and the position of the parts relative to each other in the drawing, just to express the technical solution clearly and conveniently. It should be understood that the use of orientation words should not limit the scope of the application claimed.

[0074] In the case of no conflict, the above-mentioned embodiments and features in the embodiments can be combined with each other.

[0075] The above disclosure is only a preferred embodiment of the utility model, and of course cannot limit the scope of the utility model, so equivalent changes made according to the claims of the utility model still fall within the scope of the utility model.

Claims

1. A hybrid exposure system, characterized by, The application relates to an exposure device, comprising: a first exposure device (10) comprising a vacuum chamber (110), an electron beam emitting source (120), an electron optical path assembly (130) and a scanning system (140) located in the vacuum chamber (110), wherein an electron beam (50) emitted by the electron beam emitting source (120) can be projected to a first irradiation area (150) of the vacuum chamber (110) through the electron optical path assembly (130) and the scanning system (140); a second exposure device (20) comprising an optical exposure light source (210) and an optical path assembly (220), wherein a light beam emitted by the optical exposure light source (210) can be projected to a second irradiation area (160) of the vacuum chamber (110) through the optical path assembly (220); a moving table (30) provided in the vacuum chamber (110) and having a sample carrying position; a driving device in driving connection with the moving table (30) and capable of driving the moving table (30) to move so that the sample carrying position is located in the first irradiation area (150) or the second irradiation area (160).

2. The hybrid exposure system according to claim 1, characterized by, The second exposure device (20) is located in an inner cavity of the vacuum chamber (110), and the light beam can be transmitted in the vacuum chamber (110) and projected to the second irradiation area (160) through the optical path assembly (220).

3. The hybrid exposure system according to claim 1, characterized by, The vacuum chamber (110) has an optical window (170) on a chamber wall, the second exposure device (20) is located outside the vacuum chamber (110), and the light beam can be projected to the second irradiation area (160) through the optical window (170).

4. The hybrid exposure system according to any one of claims 1 to 3, characterized by, The second exposure device (20) further comprises an illumination light source (230) and a second image acquisition device (240); illumination light emitted by the illumination light source (230) can be projected to the second irradiation area (160) through the optical path assembly (220), and illumination light reflected by a sample in the second irradiation area (160) can be projected to the second image acquisition device (240) through the optical path assembly (220).

5. The hybrid exposure system according to claim 4, characterized by An optical path of the light beam emitted by the optical exposure light source (210) and an optical path of the light beam of the illumination light are at least partially shared.

6. The hybrid exposure system according to claim 4, wherein The optical path assembly (220) comprises a first optical path assembly (221) and a second optical path assembly (222); the light beam emitted by the optical exposure light source (210) can be projected to the second irradiation area (160) through the first optical path assembly (221), the illumination light can be projected to the second irradiation area (160) through the second optical path assembly (222) and the first optical path assembly (221) in sequence, and the illumination light reflected by the sample in the second irradiation area (160) can be projected to the second image acquisition device (240) through the first optical path assembly (221) and the second optical path assembly (222) in sequence; or, the light beam emitted by the optical exposure light source (210) can be projected to the second irradiation area (160) through the second optical path assembly (222), the illumination light can be projected to the second irradiation area (160) through the first optical path assembly (221), and the illumination light reflected by the sample in the second irradiation area (160) can be projected to the second image acquisition device (240) through the second optical path assembly (222) and the first optical path assembly (221) in sequence. The light beam emitted by the optical exposure light source (210) can be sequentially projected to the second irradiation area (160) through the second optical path assembly (222) and the first optical path assembly (221), the illumination light can be projected to the second irradiation area (160) through the first optical path assembly (221), and the illumination light reflected by the sample in the second irradiation area (160) can be sequentially projected to the second image acquisition device (240) through the first optical path assembly (221) and the second optical path assembly (222).

7. The hybrid exposure system according to claim 4, wherein The optical exposure light source (210), the illumination light source (230) and the optical path assembly (220) are located in the inner cavity of the vacuum chamber (110), and the second image acquisition device (240) is located outside the vacuum chamber (110); The illumination light reflected by the sample in the second irradiation area (160) can be projected to the second image acquisition device (240) through the optical path assembly (220) and the optical window (170) of the vacuum chamber (110).

8. The hybrid exposure system according to claim 4, wherein The optical exposure light source (210) and the first optical path assembly (221) are located in the inner cavity of the vacuum chamber (110), and the illumination light source (230), the second optical path assembly (222) and the second image acquisition device (240) are located outside the vacuum chamber (110); The light beam emitted by the optical exposure light source (210) can be transmitted in the vacuum chamber (110) and projected to the second irradiation area (160) through the first optical path assembly (221); The illumination light can be sequentially projected to the second irradiation area (160) through the second optical path assembly (222), the optical window (170) of the vacuum chamber (110) and the first optical path assembly (221), and the illumination light reflected by the sample in the second irradiation area (160) can be sequentially projected to the second image acquisition device (240) through the first optical path assembly (221), the optical window (170) and the second optical path assembly (222).

9. The hybrid exposure system of claim 6, wherein, The hybrid exposure system at least meets at least one of the following features: The first optical path assembly (221) comprises a first light splitting element (221a) and an objective lens (223); The second optical path assembly (222) comprises a second light splitting element (222a).

10. The hybrid exposure system according to claim 9, characterized by, The first light splitting element (221a) can reflect the light beam emitted by the optical exposure light source (210) and transmit the illumination light, and the second light splitting element (222a) can reflect the illumination light emitted by the illumination light source (230) and transmit the illumination light reflected by the sample to be etched; The light beam emitted by the optical exposure light source (210) can be reflected by at least the first light splitting member (221a) and then projected to the second irradiation area (160) after being focused by the objective lens (223), the illumination light emitted by the illumination light source (230) can be reflected by at least the second light splitting member (222a), transmitted by the first light splitting member (221a), and then projected to the second irradiation area (160) after being focused by the objective lens (223), and the reflected illumination light can be transmitted by at least the objective lens (223), the first light splitting member (221a), and the second light splitting member (222a) and then projected to the second image acquisition device (240).

11. The hybrid exposure system of claim 9, wherein, The first light splitting member (221a) can transmit the light beam emitted by the optical exposure light source (210) and the reflected illumination light, and can reflect the illumination light emitted by the illumination light source (230); and the second light splitting member (222a) can reflect the light beam emitted by the optical exposure light source (210), and can transmit the reflected illumination light. The light beam emitted by the optical exposure light source (210) can be reflected by at least the second light splitting member (222a), transmitted by the first light splitting member (221a), and then projected to the second irradiation area (160) after being focused by the objective lens (223), the illumination light emitted by the illumination light source (230) can be reflected by at least the first light splitting member (221a) and then projected to the second irradiation area (160) after being focused by the objective lens (223), and the reflected illumination light can be transmitted by at least the objective lens (223), the first light splitting member (221a), and the second light splitting member (222a) and then projected to the second image acquisition device (240).

12. The hybrid exposure system according to any one of claims 1-3, wherein, The optical exposure light source (210) is a laser light source.

13. The hybrid exposure system according to any one of claims 1-3, wherein The hybrid exposure system satisfies at least one of the following conditions: The to-be-etched layer of the to-be-etched sample has a photoresist sensitive to both the light beam emitted by the optical exposure light source (210) and the electron beam emitted by the electron beam emitting source (120), and the driving device can drive the movement platform (30) to move so that the photoresist is located in the first irradiation area (150) or the second irradiation area (160); The to-be-etched layer of the to-be-etched sample has a first photoresist sensitive to the electron beam emitted by the electron beam emitting source (120) and a second photoresist sensitive to the light beam emitted by the optical exposure light source (210); The driving device can drive the movement platform (30) to move so that the first photoresist is located in the first irradiation area (150) or the second photoresist is located in the second irradiation area (160).

14. A lithographic apparatus, characterized in that, The photolithography device comprises the hybrid exposure system according to any one of claims 1-13.

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