Power integrated chip
By integrating a power integrated chip that combines a half-bridge power module and a temperature detection module, the problems of large size and inaccurate temperature measurement in traditional half-bridge power devices are solved. This achieves device miniaturization and electromagnetic shielding, and improves the accuracy of temperature detection and the reliability of over-temperature protection.
Patent Information
- Application Number
- CN202423320358.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-31
- Publication Date
- 2026-02-03
- Estimated Expiration
- 2034-12-31
AI Technical Summary
Traditional half-bridge power devices suffer from problems such as large size, susceptibility to electromagnetic radiation, and inaccurate temperature measurement.
Design a power integrated chip that integrates a half-bridge power module and a temperature detection module, and connects them through multiple pins to achieve device miniaturization and electromagnetic shielding. Use temperature-sensitive devices such as thermistors to monitor the bridge arm switch temperature in real time.
This enables the miniaturization of power devices, improves electromagnetic protection capabilities and the accuracy of temperature detection, and enhances the timeliness and reliability of over-temperature protection.
Smart Images
Figure CN223872750U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of power device technology, and in particular relates to a power integrated chip. Background Technology
[0002] Power devices are commonly used electronic components in electronic devices, used for rectification, inversion, and other functions. With product development, the market demands increasingly higher levels of electromagnetic radiation control and miniaturization in electronic devices. High-end electronic products typically employ highly integrated power devices such as Intelligent Power Modules (IPMs), while mid-to-low-end products often use discrete components, such as discrete switching transistors forming a half-bridge power device. This results in difficulties with localized circuit board design, increased size, and increased susceptibility to electromagnetic radiation.
[0003] In addition, during the power conversion process, the power switch is prone to high temperature. In order to avoid damage to the power switch due to overheating, the temperature of the power device needs to be monitored in real time. When the power switch and the temperature detection module are set as separate components, the temperature detection module is affected by the environment and cannot accurately measure the body temperature of the power switch. This leads to the inability to realize over-temperature protection in time, resulting in the problem of over-temperature damage to the switch.
[0004] Therefore, traditional half-bridge power devices suffer from problems such as large size, susceptibility to electromagnetic radiation, and inaccurate temperature measurement. Utility Model Content
[0005] The purpose of this invention is to provide a power integrated chip that addresses the problems of large size, susceptibility to electromagnetic radiation, and inaccurate temperature measurement in traditional half-bridge power devices.
[0006] A first aspect of this utility model provides a power integrated chip, comprising:
[0007] The half-bridge power module and temperature detection module are integrated within the power integrated chip. The half-bridge power module includes an upper bridge arm switch and a lower bridge arm switch connected to each other.
[0008] Multiple pins are disposed on the power integrated chip, and the multiple pins are respectively connected to the upper bridge arm switch, the lower bridge arm switch and the temperature detection module.
[0009] Optionally, the temperature detection module includes at least one temperature-sensitive device, which is disposed at a corresponding position on the power integrated chip.
[0010] Optionally, the power integrated chip has a first region and a second region, the upper bridge arm switch is disposed in the first region, the lower bridge arm switch is disposed in the second region, and the first region and the second region are arranged side by side;
[0011] The temperature detection module includes a temperature-sensitive device, which is disposed in the first region or the second region.
[0012] Optionally, the temperature-sensitive device is disposed on the side of the first region and away from the second region, or the temperature-sensitive device is disposed on the side of the second region and away from the first region.
[0013] Optionally, the temperature-sensitive device is disposed in the first region and close to the second region, or the temperature-sensitive device is disposed in the second region and close to the first region.
[0014] Optionally, the temperature-sensitive device is a thermistor.
[0015] Optionally, the thermistor is an NTC resistor.
[0016] Optionally, the upper bridge arm switch includes a first resistor, a second resistor, and a first electronic switch transistor;
[0017] The second end of the first resistor, the first end of the second resistor, and the control terminal of the first electronic switch are connected. The second end of the second resistor, the second end of the first electronic switch, and the lower bridge arm switch are connected. The first end of the first resistor, the first end of the first electronic switch, and the second end of the first electronic switch are respectively connected to the corresponding pins.
[0018] Optionally, the lower bridge arm switch includes a third resistor, a fourth resistor, and a second electronic switch.
[0019] The second end of the third resistor, the first end of the fourth resistor, and the control terminal of the second electronic switch are connected. The second end of the fourth resistor is connected to the second end of the second electronic switch. The first end of the second electronic switch is connected to the upper bridge arm switch. The first end of the third resistor, the first end of the second electronic switch, and the second end of the second electronic switch are respectively connected to the corresponding pins.
[0020] Optionally, the plurality of said pins include a first control signal pin, a second control signal pin, a first temperature signal pin, a second temperature signal pin, a first power supply pin, a second power supply pin, and a ground pin;
[0021] The first control signal pin is connected to the first end of the first resistor, the second control signal pin is connected to the first end of the third resistor, the first temperature signal pin and the second temperature signal pin are respectively connected to the two ends of the thermistor, the first power supply pin is connected to the first end of the first electronic switch, the second power supply pin is respectively connected to the second end of the first electronic switch and the first end of the second electronic switch, and the ground pin is connected to the second end of the second electronic switch.
[0022] The first control signal pin, the second control signal pin, the ground pin, the first temperature signal pin, and the second temperature signal pin are arranged side by side on the first side of the power integrated chip, and the first power supply pin and the second power supply pin are arranged side by side on the second side of the power integrated chip, with the first side and the second side being opposite to each other.
[0023] The beneficial effects of this utility model embodiment compared with the prior art are as follows: The power integrated chip mentioned above includes an integrated half-bridge power module and a temperature detection module, as well as multiple pins corresponding to and connected to the half-bridge power module and the temperature detection module. The half-bridge power module consists of an upper bridge arm switch and a lower bridge arm switch. By integrating the half-bridge power module and the temperature detection module, the power device is miniaturized, electromagnetic shielding is achieved, and the electromagnetic protection capability is improved. Furthermore, the temperature detection module can monitor the temperature of the upper bridge arm switch and the lower bridge arm switch in real time, unaffected by the external environment, thus improving the accuracy of temperature detection. Consequently, when high temperatures occur, the timeliness and reliability of over-temperature protection can be improved. Attached Figure Description
[0024] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0025] Figure 1 A schematic diagram of a first structure of a power integrated chip provided in an embodiment of this utility model;
[0026] Figure 2 A second structural schematic diagram of the power integrated chip provided in this embodiment of the present utility model;
[0027] Figure 3 A schematic diagram of a third structure of a power integrated chip provided in an embodiment of this utility model;
[0028] Figure 4A fourth structural schematic diagram of the power integrated chip provided in this embodiment of the present utility model;
[0029] Figure 5 A circuit diagram of a power integrated chip provided for an embodiment of this utility model;
[0030] Figure 6 A schematic diagram of the internal wiring of a power integrated chip provided for an embodiment of this utility model. Detailed Implementation
[0031] To make the technical problems, technical solutions, and beneficial effects of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present utility model and are not intended to limit the present utility model.
[0032] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.
[0033] It should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", and "outer" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.
[0034] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this utility model, "a plurality of" means two or more, unless otherwise explicitly specified.
[0035] The first aspect of this utility model provides a power integrated chip 100.
[0036] like Figure 1 As shown, in this embodiment, the power integrated chip 100 includes:
[0037] The half-bridge power module 10 and temperature detection module 20 are integrated in the power integrated chip 100. The half-bridge power module 10 includes an upper bridge arm switch 11 and a lower bridge arm switch 12 connected to each other.
[0038] Multiple pins are provided on the power integrated chip 100, and these pins are respectively connected to the upper bridge arm switch 11, the lower bridge arm switch 12, and the temperature detection module 20.
[0039] In this embodiment, the half-bridge power module 10 and the temperature detection module 20 are integrated in the power integrated chip 100. The power integrated chip 100 is also provided with multiple pins corresponding to the half-bridge power module 10 and the temperature detection module 20. The multiple pins include corresponding power supply pins, control pins and signal pins.
[0040] The half-bridge power module 10 consists of an upper bridge arm switch 11 and a lower bridge arm switch 12. Both ends of the upper bridge arm switch 11 and the lower bridge arm switch 12 can input DC power through corresponding power supply pins. The control terminals of the upper bridge arm switch 11 and the lower bridge arm switch 12 can input inverter control signals through corresponding control pins, and output AC power through inverter conversion at the connection node of the upper bridge arm switch 11 and the lower bridge arm switch 12. Alternatively, AC power can be input at the connection node of the upper bridge arm switch 11 and the lower bridge arm switch 12, and the control terminals of the upper bridge arm switch 11 and the lower bridge arm switch 12 can input rectification control signals through corresponding control pins, and output DC power through two rectification conversions at the upper bridge arm switch 11 and the lower bridge arm switch 12. The DC power can be output to the outside through corresponding power supply pins.
[0041] The temperature detection module 20 is used to detect the temperature of the upper bridge arm switch 11 and the lower bridge arm switch 12 to achieve temperature protection of the half-bridge power module 10 during rectification or inversion. When the temperature of the half-bridge power module 10 changes due to rectification or inversion, the temperature detection module 20 can output a corresponding temperature detection signal and output it to the external control module through the corresponding signal pin. The external control module can determine the real-time temperature of the bridge arm switch in the half-bridge power module 10 based on the temperature detection signal. When the temperature exceeds the preset temperature, the external control module can output a shutdown signal to the upper bridge arm switch 11 and the lower bridge arm switch 12 to shut down the half-bridge power module 10, thereby achieving over-temperature protection. After the half-bridge power module 10 is shut down, its temperature gradually decreases. When the temperature drops to the preset temperature, the external control module can re-output the rectification control signal or the inversion control signal and control the half-bridge power module 10 to restart.
[0042] By integrating the half-bridge power module 10 and the temperature detection module 20, the power devices are miniaturized. The integrated packaging structure can shield against external electromagnetic interference, achieving electromagnetic shielding and improving electromagnetic protection capabilities. Furthermore, the temperature detection module 20 can monitor the temperature of the upper bridge arm switch 11 and the lower bridge arm switch 12 in real time, unaffected by the external environment, thus improving the accuracy of temperature detection. Consequently, in the event of high temperatures, the timeliness and reliability of over-temperature protection can be improved.
[0043] The temperature detection module 20 can be one or more, and can be a corresponding temperature sensor, thermistor, etc. In an optional embodiment, such as... Figure 2 As shown, the temperature detection module 20 includes at least one temperature-sensitive device 21, which is disposed at a corresponding position on the power integrated chip 100.
[0044] In this embodiment, the temperature detection module 20 may be equipped with one or more temperature-sensitive devices 21. When one temperature-sensitive device 21 is set, each temperature-sensitive device 21 may be distributed in the corresponding position of the package structure of the power integrated chip 100, for example, set in four diagonal positions, or set side by side in the middle position of the power integrated chip 100. The specific number and setting position are not limited.
[0045] When the temperature of the half-bridge power module 10 changes, the temperature-sensitive device 21 outputs a change in its electrical signal, such as a current signal or a voltage signal. The external control module can determine the real-time temperature of the bridge arm switch in the half-bridge power module 10 based on the received electrical signal. When the temperature exceeds the preset temperature, the external control module can output a shutdown signal to the upper bridge arm switch 11 and the lower bridge arm switch 12, thereby shutting down the half-bridge power module 10 and achieving over-temperature protection.
[0046] The upper bridge arm switch 11 and the lower bridge arm switch 12 are interconnected and can be located at corresponding positions within the power integrated chip 100. In an optional embodiment, such as... Figure 3 As shown, the power integrated chip 100 has a first region 110 and a second region 120. The upper bridge arm switch 11 is disposed in the first region 110, and the lower bridge arm switch 12 is disposed in the second region 120. The first region 110 and the second region 120 are arranged side by side.
[0047] The temperature detection module 20 includes a temperature sensing device 21, which is disposed in the first region 110 or the second region 120.
[0048] In this embodiment, to facilitate temperature detection, the upper bridge arm switch 11 and the lower bridge arm switch 12 are respectively located in the corresponding first region 110 and second region 120. The upper bridge arm switch 11 and the lower bridge arm switch 12 are interconnected and connected to their corresponding pins. Since the power integrated chip 100 is small in size and its internal temperature is relatively uniform, the location and number of temperature detection modules 20 have little impact on the temperature detection accuracy. Therefore, the temperature detection module 20 is equipped with a temperature sensing device 21, which can be located in the first region 110 or the second region 120.
[0049] In order to reduce the spacing between the first region 110 and the second region 120 and further miniaturize the power integrated chip 100, in an optional embodiment, the temperature-sensitive device 21 is disposed on the side of the first region 110 and away from the second region 120, or the temperature-sensitive device 21 is disposed on the side of the second region 120 and away from the first region 110, for example... Figure 3 As shown, the temperature-sensitive device 21 is located at the bottom of the second region 120 and away from the first region 110. Since the power integrated chip 100 is small in size, it can detect the real-time temperature of the half-bridge power module 10 even when located at the bottom. Furthermore, the distance between the first region 110 and the second region 120 can be minimized to further achieve miniaturization of the power integrated chip 100.
[0050] In another alternative embodiment, to improve temperature detection accuracy, the temperature sensing device 21 is disposed in the first region 110 and close to the second region 120; or, the temperature sensing device 21 is disposed in the second region 120 and close to the first region 110, for example... Figure 4 As shown, the temperature-sensitive device 21 is disposed in the upper part of the second region 120 and close to the first region 110. By placing the temperature-sensitive device 21 in the middle position, the temperature it detects can be closer to the real-time temperature of the half-bridge power module 10, thereby improving the accuracy of temperature detection.
[0051] The temperature-sensitive device 21 can be a corresponding sensor, probe, etc. In an optional embodiment, the temperature-sensitive device 21 is a thermistor. When the temperature of the half-bridge power module 10 changes, the internal resistance of the thermistor changes, and the output current signal changes, thereby realizing indirect temperature feedback.
[0052] The thermistor can adopt corresponding positive temperature coefficient thermistors, negative temperature coefficient thermistors, etc., in an optional embodiment, such as... Figure 5As shown, the thermistor is an NTC resistor, and the resistance of an NTC resistor decreases as the temperature increases. Correspondingly, when a fixed voltage is input to the pin connected to the NTC resistor, its output current increases with the temperature, thereby allowing the internal temperature of the power integrated chip 100 to be determined by the magnitude of the output current.
[0053] The upper arm switch 11 and the lower arm switch 12 can employ corresponding switching transistors. In an optional embodiment, such as... Figure 5 and Figure 6 As shown, the upper bridge arm switch 11 includes a first resistor R1, a second resistor R2, and a first electronic switch Q1;
[0054] The second end of the first resistor R1, the first end of the second resistor R2, and the control terminal of the first electronic switch Q1 are connected. The second end of the second resistor R2, the second end of the first electronic switch Q1, and the lower bridge arm switch 12 are connected. The first end of the first resistor R1, the first end of the first electronic switch Q1, and the second end of the first electronic switch Q1 are respectively connected to their corresponding pins.
[0055] The lower bridge arm switch 12 includes a third resistor R3, a fourth resistor R4, and a second electronic switch Q2;
[0056] The second end of the third resistor R3, the first end of the fourth resistor R4, and the control terminal of the second electronic switch Q2 are connected. The second end of the fourth resistor R4 is connected to the second end of the second electronic switch Q2. The first end of the second electronic switch Q2 is connected to the upper bridge arm switch 11. The first end of the third resistor R3, the first end of the second electronic switch Q2, and the second end of the second electronic switch Q2 are respectively connected to the corresponding pins.
[0057] In this embodiment, the first electronic switch Q1 and the second electronic switch Q2 can be MOS transistors, and their types can be selected according to requirements. In an optional embodiment, the first electronic switch Q1 and the second electronic switch Q2 are NMOS transistors.
[0058] The second end of the first electronic switch Q1 and the first end of the second electronic switch Q2 are connected to form the connection node of the upper bridge arm switch 11 and the lower bridge arm switch 12, and are used to input or output AC power. The first end of the first electronic switch Q1 and the second end of the second electronic switch Q2 form the DC terminal of the half-bridge power module 10, and are used to input or output DC power. The first end of the first resistor R1 and the first end of the third resistor R3 are used to input rectifier control signals or inverter control signals through corresponding pins. The rectifier control signals and inverter control signals can be PWM signals.
[0059] The first resistor R1 and the second resistor R2 form a voltage divider circuit, which is used to divide the input control signal and output the divided control signal to the control terminal of the first electronic switch Q1. The third resistor R3 and the fourth resistor R4 form a voltage divider circuit, which is used to divide the input control signal and output the divided control signal to the control terminal of the second electronic switch Q2, thereby realizing rectification control or inverter control.
[0060] Based on the structure of the upper bridge arm switch 11, the lower bridge arm switch 12, and the temperature-sensitive device 21, multiple pins can be configured to corresponding types. In an optional embodiment, such as... Figure 5 As shown, the multiple pins include a first control signal pin Ctr1, a second control signal pin Ctr2, a first temperature signal pin T1, a second temperature signal pin T2, a first power supply pin DC, a second power supply pin AC, and a ground pin VSS;
[0061] The first control signal pin Ctr1 is connected to the first end of the first resistor R1, the second control signal pin Ctr2 is connected to the first end of the third resistor R3, the first temperature signal pin T1 and the second temperature signal pin T2 are respectively connected to the two ends of the thermistor, the first power supply pin DC is connected to the first end of the first electronic switch Q1, the second power supply pin AC is connected to the second end of the first electronic switch Q1 and the first end of the second electronic switch Q2, and the ground pin VSS is connected to the second end of the second electronic switch Q2.
[0062] like Figure 6 As shown, the first control signal pin Ctr1, the second control signal pin Ctr2, the ground pin VSS, the first temperature signal pin T1, and the second temperature signal pin T2 are arranged side by side on the first side of the power integrated chip 100, and the first power supply pin DC and the second power supply pin AC are arranged side by side on the second side of the power integrated chip 100. The first side and the second side are arranged opposite to each other.
[0063] The first control signal pin Ctr1 and the second control signal pin Ctr2 are used to input rectifier control signals or inverter control signals. The first control signal pin Ctr1 is connected to the first resistor R1 through the internal wiring of the power integrated chip 100. The first resistor R1 is connected to the second resistor R2 and the first electronic switch Q1 through the internal wiring. The second resistor R2 is connected to the first electronic switch Q1 through the internal wiring. The first electronic switch Q1 can be connected to the first power supply pin DC and the second power supply pin AC through the internal wiring.
[0064] Correspondingly, the second control signal pin Ctr2 is connected to the third resistor R3 through the internal wiring of the power integrated chip 100. The third resistor R3 is connected to the fourth resistor R4 and the second electronic switch Q2 through internal wiring. The fourth resistor R4 is connected to the second electronic switch Q2 through internal wiring. The second electronic switch Q2 can be connected to the second power supply pin AC and the ground pin VSS through internal wiring. Correspondingly, the first temperature signal pin T1 and the second temperature signal pin T2 are connected to the two ends of the NTC resistor NTC through the internal wiring of the power integrated chip 100.
[0065] The first temperature signal pin T1 is used to input a voltage signal, the second temperature signal pin T2 is used to output a current signal that represents the temperature, the first power supply pin DC is used to input or output DC power, the second power supply pin AC is used to input or output AC power, and the ground pin VSS is used for grounding.
[0066] Corresponding to the structure of the upper bridge arm switch 11, the lower bridge arm switch 12, and the temperature-sensitive device 21, and to achieve high and low voltage isolation, the first control signal pin Ctr1, the ground pin VSS, the second control signal pin Ctr2, the first temperature signal pin T1, and the second temperature signal pin T2 of the low voltage are arranged side by side on the first side of the power integrated chip 100. The first power supply pin DC and the second power supply pin AC used to achieve power conversion are arranged side by side on the second side of the power integrated chip 100. On the one hand, the pins can be evenly distributed to each other, reducing the size of the power integrated chip 100. On the other hand, the isolation of high and low voltage signals can be achieved, avoiding crosstalk between the high and low voltage pins.
[0067] The position between the first temperature signal pin T1 and the second temperature signal pin T2 can be set at the bottom or middle of the first side according to the setting position of the NTC resistor NTC, and the specific position is not specifically limited.
[0068] The beneficial effects of this utility model embodiment compared with the prior art are as follows: The power integrated chip 100 includes an integrated half-bridge power module 10 and a temperature detection module 20, as well as multiple pins corresponding to and connected to the half-bridge power module 10 and the temperature detection module 20. The half-bridge power module 10 is composed of an upper bridge arm switch 11 and a lower bridge arm switch 12. By integrating the half-bridge power module 10 and the temperature detection module 20, the miniaturization of the power device is achieved, electromagnetic shielding is achieved, and electromagnetic protection capability is improved. Furthermore, the temperature detection module 20 can monitor the temperature of the upper bridge arm switch 11 and the lower bridge arm switch 12 in real time, unaffected by the external environment, thus improving the accuracy of temperature detection. Consequently, when high temperatures occur, the timeliness and reliability of over-temperature protection can be improved.
[0069] The above-described embodiments are only used to illustrate the technical solutions of this utility model, and are not intended to limit it. Although this utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this utility model, and should all be included within the protection scope of this utility model.
Claims
1. A power integrated chip, characterized in that, include: The half-bridge power module and temperature detection module are integrated within the power integrated chip. The half-bridge power module includes an upper bridge arm switch and a lower bridge arm switch connected to each other. Multiple pins are disposed on the power integrated chip, and the multiple pins are respectively connected to the upper bridge arm switch, the lower bridge arm switch and the temperature detection module.
2. The power integrated chip as described in claim 1, characterized in that, The temperature detection module includes at least one temperature-sensitive device, which is disposed at a corresponding position on the power integrated chip.
3. The power integrated chip as described in claim 2, characterized in that, The power integrated chip has a first region and a second region. The upper bridge arm switch is disposed in the first region, and the lower bridge arm switch is disposed in the second region. The first region and the second region are arranged side by side. The temperature detection module includes a temperature-sensitive device, which is disposed in the first region or the second region.
4. The power integrated chip as described in claim 3, characterized in that, The temperature-sensitive device is disposed on the side of the first region and away from the second region, or the temperature-sensitive device is disposed on the side of the second region and away from the first region.
5. The power integrated chip as described in claim 3, characterized in that, The temperature-sensitive device is disposed in the first region and close to the second region, or the temperature-sensitive device is disposed in the second region and close to the first region.
6. The power integrated chip according to any one of claims 3 to 5, characterized in that, The temperature-sensitive device is a thermistor.
7. The power integrated chip as described in claim 6, characterized in that, The thermistor is an NTC resistor.
8. The power integrated chip as described in claim 6, characterized in that, The upper bridge arm switch includes a first resistor, a second resistor, and a first electronic switch tube; The second end of the first resistor, the first end of the second resistor, and the control terminal of the first electronic switch are connected. The second end of the second resistor, the second end of the first electronic switch, and the lower bridge arm switch are connected. The first end of the first resistor, the first end of the first electronic switch, and the second end of the first electronic switch are respectively connected to the corresponding pins.
9. The power integrated chip as described in claim 8, characterized in that, The lower bridge arm switch includes a third resistor, a fourth resistor, and a second electronic switch. The second end of the third resistor, the first end of the fourth resistor, and the control terminal of the second electronic switch are connected. The second end of the fourth resistor is connected to the second end of the second electronic switch. The first end of the second electronic switch is connected to the upper bridge arm switch. The first end of the third resistor, the first end of the second electronic switch, and the second end of the second electronic switch are respectively connected to the corresponding pins.
10. The power integrated chip as described in claim 9, characterized in that, The plurality of pins include a first control signal pin, a second control signal pin, a first temperature signal pin, a second temperature signal pin, a first power supply pin, a second power supply pin, and a ground pin; The first control signal pin is connected to the first end of the first resistor, the second control signal pin is connected to the first end of the third resistor, the first temperature signal pin and the second temperature signal pin are respectively connected to the two ends of the thermistor, the first power supply pin is connected to the first end of the first electronic switch, the second power supply pin is respectively connected to the second end of the first electronic switch and the first end of the second electronic switch, and the ground pin is connected to the second end of the second electronic switch. The first control signal pin, the second control signal pin, the ground pin, the first temperature signal pin, and the second temperature signal pin are arranged side by side on the first side of the power integrated chip, and the first power supply pin and the second power supply pin are arranged side by side on the second side of the power integrated chip, with the first side and the second side being opposite to each other.