SiC seed crystal high-efficiency bonding, sintering and fixing device
By combining seed crystal positioning ring, seed crystal support positioning ring, positioning pressure block and weighing paper, the problem of reduced bonding quality caused by seed crystal misalignment and thermal expansion differences is solved, achieving efficient and uniform seed crystal bonding and sintering, which is suitable for silicon carbide seed crystals of different diameters.
Patent Information
- Application Number
- CN202520065809.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-13
- Publication Date
- 2026-02-06
- Estimated Expiration
- 2035-01-13
AI Technical Summary
In the traditional seed crystal preparation process, seed crystal offset and the difference in thermal expansion coefficient between the seed crystal and the seed crystal block lead to a decrease in bonding quality, which affects the growth of silicon carbide crystals. Furthermore, hot pressing and sintering is time-consuming and difficult to scale up for production.
The combination structure of seed crystal positioning ring, seed crystal support positioning ring, positioning pressure block and weighing paper is adopted to ensure the concentricity of seed crystal and graphite paper. The cooperation of positioning pressure block and weighing paper avoids seed crystal displacement and achieves uniform bonding during hot pressing sintering. The method of sintering multiple seed crystals at one time improves efficiency.
It effectively avoids seed crystal misalignment, improves the sintering efficiency of the hot press furnace, improves the surface defects of the seed crystal during the high-temperature crystal growth process, reduces the probability of cracking, and is suitable for silicon carbide seed crystals of different diameters.
Smart Images
Figure CN223879896U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to the technical field of semiconductor production, more particularly to a kind of SiC seed crystal high-efficiency bonding sintering fixing device. BACKGROUND
[0002] In today's rapid development of information technology, the innovation of semiconductor technology plays an increasingly important role. Wide-bandgap semiconductor materials represented by silicon carbide (SiC) are the third generation of semiconductors after silicon (Si) and gallium arsenide (GaAs). Silicon carbide (SiC) has the advantages of high breakdown field strength, high thermal conductivity, high saturation drift electron rate and high bonding energy, and has great potential in aerospace, information technology, new energy technology, national defense security and other fields. In addition to the continuous growth of market demand, the third generation of semiconductors represented by silicon carbide (SiC) is one of the most promising materials.
[0003] Physical vapor transport (PVT) is the most commonly used method for producing silicon carbide (SiC) crystals. This method is to sublimate silicon carbide powder into Si atoms, Si2C molecules and SiC2 molecules at a temperature of more than 2000°C. Under the driving of temperature gradient, these gas-phase substances will be transported to the silicon carbide (SiC) seed crystal at a lower temperature to form 4H-type silicon carbide (SiC) crystals. In the traditional seed crystal preparation process, the final seed crystal bonding quality is often reduced due to the deviation of the seed crystal and the difference in the thermal expansion coefficient between the seed crystal and the seed crystal pressing block, which ultimately affects the growth of high-quality silicon carbide (SiC) crystals. In addition, the heat pressing sintering in the traditional seed crystal preparation process is time-consuming, which requires a large number of seed crystal sintering equipment in large-scale production. To solve the above problems, the utility model provides a SiC seed crystal high-efficiency bonding sintering fixing device. SUMMARY
[0004] The utility model aims at solving the technical problem proposed in the above background art, and provides a SiC seed crystal high-efficiency bonding sintering fixing device.
[0005] To achieve the above-mentioned purpose, the utility model provides the following technical scheme: a SiC seed crystal high-efficiency bonding sintering fixing device, comprising a seed crystal holder, a seed crystal holder positioning ring is threadedly connected to the seed crystal holder, the seed crystal holder positioning ring is a hollow structure with openings at both ends, a groove for preparing a seed crystal body can be formed between the seed crystal holder positioning ring and the seed crystal holder, a graphite paper is provided on the seed crystal holder in the groove, a seed crystal positioning ring is provided on the graphite paper, the seed crystal positioning ring is slidingly arranged in the groove, and the seed crystal body and the graphite paper are bonded by the seed crystal positioning ring.
[0006] A positioning pressing block is slidably arranged in the groove body, and weighing paper is arranged between the bottom of the positioning pressing block and the seed crystal holder positioning ring. The weighing paper is adhered to the seed crystal body and the graphite paper by the positioning pressing block.
[0007] Further preferred scheme: the seed crystal holder positioning ring and the seed crystal positioning ring are both circular ring structures, and the positioning pressing block and the graphite paper are both cylindrical structures.
[0008] Further preferred scheme: the positioning pressing block, the seed crystal holder, the seed crystal holder positioning ring and the seed crystal positioning ring are preferably made of graphite.
[0009] Further preferred scheme: the diameter of the weighing paper is the same as the outer diameter of the seed crystal holder positioning ring.
[0010] Further preferred scheme: the inner diameter of the seed crystal positioning ring is the same as the diameter of the seed crystal body, and the outer diameter of the seed crystal positioning ring is the same as the inner diameter of the seed crystal holder positioning ring.
[0011] Further preferred scheme: the inner diameter of the seed crystal holder positioning ring is the same as the diameter of the positioning pressing block and the graphite paper.
[0012] Further preferred scheme: the parallelism and flatness of the seed crystal holder and the positioning pressing block are both less than 5 μm. Beneficial effects
[0013] 1. By arranging the seed crystal positioning ring, the seed crystal holder, the seed crystal holder positioning ring, the positioning pressing block and the weighing paper, the concentricity of the seed crystal, the graphite paper and the seed crystal holder is ensured in the seed crystal adhering process. In the hot-pressing sintering process, the positioning pressing block and the weighing paper are pressed into the seed crystal holder positioning ring for positioning, which not only avoids the phenomenon of seed crystal deviation, but also makes it simple and convenient to assemble and take the positioning pressing block compared with the traditional seed crystal positioning device.
[0014] 2. By arranging the graphite paper, the seed crystal positioning ring, the seed crystal holder positioning ring and the positioning pressing block, the seed crystal prepared by the seed crystal positioning ring, the seed crystal holder positioning ring and the seed crystal holder is uniformly hot-pressed due to the adhesive layer, which has a significant effect on improving the surface defect problem of the seed crystal caused by the thermal expansion difference in the high-temperature crystal growth process, and reducing the probability of cracking of the seed crystal caused by thermal stress and mechanical stress. BRIEF DESCRIPTION OF DRAWINGS
[0015] Figure 1 It is a schematic diagram of the overall structure of the utility model.
[0016] Figure 2 It is a schematic diagram of the internal structure of the seed crystal holder positioning ring of the utility model.
[0017] Figure 3 It is a schematic diagram of the internal structure of the seed crystal holder positioning ring of the utility model.Figure 2 A top view of the device.
[0018] Figure 4 It is the structure schematic diagram after the seed crystal holder positioning ring, the positioning pressing block and the seed crystal positioning ring are cut open.
[0019] Figure 5 It is the structure schematic diagram inside the groove body when multiple groups of secondary seed crystals are bonded.
[0020] Figures 1-5 In the figure, 1 is a seed crystal holder, 2 is a seed crystal holder positioning ring, 3 is a positioning pressing block, 4 is a silicon rubber roller, 5 is a seed crystal positioning ring, 6 is graphite paper, 7 is a seed crystal body, 8 is weighing paper, and 9 is a groove body. DETAILED DESCRIPTION
[0021] The technical solutions in the embodiments of the present application will be clearly and completely described in the specification of the present application with reference to the accompanying drawings. Figures 1-5 The technical solutions in the embodiments of the present application will be clearly and completely described in the specification of the present application with reference to the accompanying drawings.
[0022] Please refer to Figures 1-5 In the embodiments of the present application, a SiC seed crystal high-efficiency bonding sintering fixing device comprises a seed crystal holder 1, a seed crystal holder positioning ring 2 which is sleeved and threadedly connected to the seed crystal holder 1, the seed crystal holder positioning ring 2 has a hollow structure with openings at both ends, a groove body 9 for preparing a seed crystal body 7 can be formed between the seed crystal holder positioning ring 2 and the seed crystal holder 1, the seed crystal holder 1 in the groove body 9 is provided with graphite paper 6, the graphite paper 6 is provided with a seed crystal positioning ring 5, the seed crystal positioning ring 5 is slidingly arranged in the groove body 9, the seed crystal positioning ring 5 is used to realize the bonding of the seed crystal body 7 and the graphite paper 6, a positioning pressing block 3 is slidingly arranged in the groove body 9, the positioning pressing block 3 is provided with weighing paper 8 between the bottom and the seed crystal holder positioning ring 2, and the positioning pressing block 3 drives the weighing paper 8 to bond with the seed crystal body 7 and the graphite paper 6.
[0023] In the embodiments of the present application, as shown in Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 5 , the seed crystal holder positioning ring 2 and the seed crystal positioning ring 5 are both circular ring structures, the positioning pressing block 3 and the graphite paper 6 are both cylindrical structures, the positioning pressing block 3, the seed crystal holder 1, the seed crystal holder positioning ring 2 and the seed crystal positioning ring 5 are preferably made of graphite material, the diameter of the weighing paper 8 is the same as the outer diameter of the seed crystal holder positioning ring 2, the inner diameter of the seed crystal positioning ring 5 is the same as the diameter of the seed crystal body 7, the outer diameter of the seed crystal positioning ring 5 is the same as the inner diameter of the seed crystal holder positioning ring 2, the inner diameter of the seed crystal holder positioning ring 2 is the same as the diameter of the positioning pressing block 3 and the graphite paper 6, and the parallelism and flatness of the seed crystal holder 1 and the positioning pressing block 3 are both less than 5 μm.
[0024] Specifically, the SiC seed crystal bonding method is divided into one-time bonding and two-time bonding, and the sintering method is divided into one-time sintering and two-time sintering. The one-time bonding is the bonding of the seed crystal and the graphite paper 6. The seed crystal holder 1 and the seed crystal holder positioning ring 2 are connected by threads. The graphite paper 6 is placed on the surface of the seed crystal holder 1 in the groove 9. Then the seed crystal positioning ring 5 is placed above the graphite paper 6. The seed crystal is bonded above the graphite paper 6. The silicon rubber roller 4 is used to uniformly roll the surface of the seed crystal, so that the seed crystal and the graphite paper 6 are fully bonded. The one-time sintering is the hot-press sintering of the one-time bonded seed crystal obtained in the above steps. The seed crystal holder 1 and the seed crystal holder positioning ring 2 are connected by threads. The graphite paper 6 in the one-time bonded seed crystal is placed downward on the surface of the seed crystal holder 1. Then a plurality of one-time bonded seed crystals are stacked in sequence according to the above method. After the stacking is completed, a piece of graphite paper 6 is placed above the topmost seed crystal. The weighing paper 8 is placed centrally above the seed crystal holder positioning ring 2. Then the positioning pressing block 3 is placed centrally on the weighing paper 8 and pressed into the seed crystal holder positioning ring 2. Finally, the assembled fixing device is moved into the hot-press furnace. Vacuum is extracted and heated to perform one-time sintering and solidification.
[0025] Secondly, the two-time bonding and sintering is the bonding and sintering of the one-time bonded seed crystal in the above steps on a new seed crystal holder 1. Specifically, the graphite paper 6 in the one-time sintered seed crystal is uniformly coated on one side and bonded on the seed crystal holder 1 by screwing the seed crystal holder 1 and the seed crystal holder positioning ring 2. The weighing paper 8 is placed centrally above the seed crystal holder positioning ring 2. The positioning pressing block 3 is placed centrally on the weighing paper 8 and pressed into the seed crystal holder positioning ring 2. Then the assembled fixing device is moved into the hot-press furnace. Vacuum is extracted and heated to perform two-time sintering and solidification. The vacuum is extracted to ≤100 Pa. The heating is performed in a step-by-step manner. The time is 6-8h. The temperature is 400-800℃.
[0026] In summary, the present embodiment adopts the combination of the seed crystal positioning ring 5, the seed crystal holder positioning ring 2, the positioning pressing block 3 and the weighing paper 8. In the seed crystal bonding process, the concentricity of the seed crystal and the graphite paper 6 and the seed crystal holder 1 is ensured. In the hot-press sintering, the positioning pressing block 3 and the weighing paper 8 are pressed into the seed crystal holder positioning ring 2 for positioning. Not only is the phenomenon of seed crystal deviation avoided, but also the traditional seed crystal positioning device is simple and convenient to assemble and take the positioning pressing block 3. At the same time, the one-time sintering of multiple seed crystals is adopted, which improves the efficiency of sintering seed crystals in a single hot-press furnace. The seed crystal prepared by the method of the present embodiment is uniformly hot-pressed due to the adhesive layer, which has a significant effect on improving the surface defect problem caused by the difference in thermal expansion during high-temperature crystal growth. The probability of cracking of the seed crystal due to thermal stress and mechanical stress is reduced. Further, in the present embodiment, the diameter of the graphite paper 6 is fixed and greater than the diameter of an eight-inch seed crystal. It can be applied to all different specifications of silicon carbide seed crystals. The replacement between different sizes is convenient and the operation is simple.
[0027] It should be noted that, in this embodiment, in order to improve the quality of the seed crystal and the efficiency of bonding and sintering, the following two steps can be used for production: Example
[0028] 1. Perform necessary leveling, processing, and cleaning on the seed crystal holder 1 and 10 sheets of graphite paper 6. Clean the 10 seed crystals with anhydrous ethanol as necessary. Use a heating platform to preheat the seed crystal holder 1, graphite paper 6, and seed crystals (placed in the order of seed crystal holder 1, graphite paper 6, and seed crystals from bottom to top). Heat to 80°C and turn off the heating platform to remove moisture adhering to the surface of the seed crystal holder 1, graphite paper 6, and seed crystals due to environmental factors.
[0029] 2. Take one prepared seed crystal with the Si side facing up and place it in the center on the suction cup of the spin coater. Use a disposable dropper to add 5ml of glue. Close the spin coater lid. The spin coater uses a two-stage spin coating mode. The first stage lasts 20 seconds at a speed of 3000r / min, and the second stage lasts 20 seconds at a speed of 6000r / min. This speed can ensure that the glue is evenly distributed on the Si side of the seed crystal.
[0030] 3. The seed crystal holder positioning ring 2 is connected to the seed crystal holder 1 on the heating platform by threads. Take a piece of graphite paper 6 and place it on the surface of the seed crystal holder 1 inside the seed crystal holder positioning ring 2. Place the seed crystal positioning ring 5 on top of the graphite paper 6 inside the seed crystal holder positioning ring 2. Adhere the seed crystal with the glue applied to it to the graphite paper 6. Use the silicone rubber roller 4 to evenly roll the surface of the seed crystal so that the seed crystal and the graphite paper 6 are fully bonded together.
[0031] 4. Repeat steps 2 and 3 to prepare 9 seed crystals with graphite paper 6 bonded together. Connect the seed crystal holder 1 and the seed crystal holder positioning ring 2 with threads. Place one of the bonded seed crystals with graphite paper 6 facing down on the surface of the seed crystal holder 1. Then stack the remaining 9 bonded seed crystals in the same way. After stacking, place another piece of graphite paper 6 on the top seed crystal. Place the weighing paper 8 with the same outer diameter as the seed crystal holder positioning ring 2 in the center above the positioning ring. Place the positioning block 3 in the center on the weighing paper 8 and press it into the seed crystal holder positioning ring 2. Then move the assembled seed crystal positioning device into the heating plate in the hot press furnace cavity, press down the furnace pressure device, close the hot press furnace cavity door, turn on the vacuum pump, and evacuate the hot press furnace cavity to below 100pa. Then turn on the heating plate power and heat up according to the preset hot press sintering program to perform one sintering and curing.
[0032] 5. Place the sintered seed crystal graphite paper 6 obtained in step 4 with one side facing up on the center of the spin coater suction cup. Use a disposable dropper to add 5ml of glue, close the spin coater lid, and spin coat in a two-stage mode. The first stage lasts 20 seconds at a speed of 3000r / min, and the second stage lasts 20 seconds at a speed of 5000r / min. This speed ensures that the glue is evenly distributed on the graphite paper 6 on the Si surface of the seed crystal.
[0033] 6. Connect the seed crystal holder 1 and the seed crystal holder positioning ring 2 with threads. Place the seed crystal graphite paper 6 obtained in step 5 face down into the seed crystal holder positioning ring 2 and stick it tightly to the seed crystal holder 1. Use the silicone rubber roller 4 to apply appropriate pressure evenly to the seed crystal so that the graphite paper 6 on the Si side of the seed crystal is tightly bonded to the seed crystal holder 1.
[0034] 7. Place the weighing paper 8, which has the same outer diameter as the seed crystal holder positioning ring 2, in the center above the positioning ring. Place the positioning block 3 in the center on the weighing paper 8 and press it into the seed crystal holder positioning ring 2. Then, move the assembled seed crystal positioning device into the heating plate in the hot press furnace cavity. Press down the pressure device in the furnace cavity, close the hot press furnace cavity door, evacuate to below 100 Pa, turn off the vacuum pump to stop evacuating, and then fill with argon gas until the pressure in the hot press furnace cavity reaches 90,000 Pa. Turn on the heating plate power and heat up according to the preset hot press sintering program for secondary sintering and curing. After sintering, wait for the temperature to drop to below 50°C, then open the hot press furnace cavity door and take out the seed crystal positioning device. Clean up the cured glue that overflowed from the seed crystal holder 1 to obtain the bonded seed crystal finished product. Example
[0035] 1. Perform necessary leveling, processing, and cleaning on the seed crystal holder 1 and 10 sheets of graphite paper 6. Clean the 10 seed crystals with anhydrous ethanol as necessary. Use a heating platform to preheat the seed crystal holder 1, graphite paper 6, and seed crystals (placed in the order of seed crystal holder 1, graphite paper 6, and seed crystals from bottom to top). Heat to 80°C and turn off the heating platform to remove moisture adhering to the surface of the seed crystal holder 1, graphite paper 6, and seed crystals due to environmental factors.
[0036] 2. Take one prepared seed crystal with the Si side facing up and place it in the center on the suction cup of the spin coater. Use a disposable dropper to add 5ml of glue, close the spin coater lid, and spin coat in two stages. The first stage lasts 10 seconds at a speed of 2000r / min, and the second stage lasts 20 seconds at a speed of 3000r / min. This speed ensures that the glue is evenly distributed on the Si side of the seed crystal.
[0037] 3, spin-coated seed crystal Si face up to the center placed on the graphite paper 6 in the heating platform, 110 ℃ baking 30 min. Then the seed crystal holder positioning ring 2 and seed crystal holder 1 by threaded connection, take 1 graphite paper 6 placed in the seed crystal holder positioning ring 2 seed crystal holder 1 surface, seed crystal positioning ring 5 placed in the seed crystal holder positioning ring 2 above the graphite paper 6, the seed crystal Si face down to the glue baked on the graphite paper 6, using the silicone rubber roller 4 uniform rolling seed crystal surface, make the seed crystal and graphite paper 6 fully bonded together.
[0038] 4, repeat step 2 and step 3, and then prepared 9 seed crystal graphite paper 6, the seed crystal holder 1 and seed crystal holder positioning ring 2 by threaded connection, put one of the 9 seed crystal graphite paper 6 down on the seed crystal holder 1 surface, then the remaining 9 seed crystal according to this method in turn, put a graphite paper 6 on the top of the seed crystal, the same diameter as the seed crystal holder positioning ring 2 outside the weighing paper 8 is placed in the center of the positioning ring, the positioning block 3 is placed in the center of the weighing paper 8 and pressed into the seed crystal holder positioning ring 2, then the assembled seed crystal positioning device is moved into the heating disc in the hot pressing furnace cavity, the lower pressure device is pressed, the hot pressing furnace cavity door is closed, the vacuum pump is started, the hot pressing furnace cavity is evacuated to below 100 pa, the heating disc power is turned on, and the preset hot pressing sintering program is started.
[0039] 5, the sintered seed crystal graphite paper 6 obtained in step 4 is placed on the spin coater chuck with one side up, 5 ml of glue is dropped into the disposable dropper, the spin coater cover is closed, the spin coater is used in two-stage mode, the first stage time is 10 s, the speed is 1500 r / min, the second stage time is 20 s, the speed is 2500 r / min, which can ensure the uniform distribution of glue on the graphite paper 6 on the seed crystal Si surface.
[0040] 6, the seed crystal holder 1 and the seed crystal holder positioning ring 2 are connected by threaded connection, the spin-coated seed crystal graphite paper 6 obtained in step 5 is placed in the seed crystal holder positioning ring 2 with the bottom down, and is tightly pasted on the seed crystal holder 1, the silicone rubber roller 4 is used to uniformly apply appropriate pressure to the seed crystal, so that the graphite paper 6 on the seed crystal Si surface is tightly bonded with the seed crystal holder 1.
[0041] 7. Place the weighing paper 8, which has the same outer diameter as the seed crystal holder positioning ring 2, in the center above the positioning ring. Place the positioning block 3 in the center on the weighing paper 8 and press it into the seed crystal holder positioning ring 2. Then, move the assembled seed crystal positioning device into the heating plate in the hot press furnace cavity. Press down the pressure device in the furnace cavity, close the hot press furnace cavity door, evacuate to below 100 Pa, turn off the vacuum pump to stop evacuating, and then fill with argon gas until the pressure in the hot press furnace cavity reaches 90,000 Pa. Turn on the heating plate power and heat up according to the preset hot press sintering program for secondary sintering and curing. After sintering, wait for the temperature to drop to below 50°C, then open the hot press furnace cavity door and take out the seed crystal positioning device. Clean up the cured glue that overflowed from the seed crystal holder 1 to obtain the bonded seed crystal finished product.
[0042] Working principle:
[0043] S1. Connect the seed crystal holder 1 and the seed crystal holder positioning ring 2 via threads. Place the graphite paper 6 on the surface of the seed crystal holder 1 inside the tank 9. Simultaneously, place the seed crystal positioning ring 5 above the graphite paper 6 inside the tank 9. Then, evenly apply adhesive to the surface of the seed crystal and bond it to the graphite paper 6. Use the silicone rubber roller 4 to evenly roll and press the surface of the seed crystal to ensure that the seed crystal and the graphite paper 6 are fully bonded together (e.g., Figure 4 (as shown)
[0044] S2. Repeat step S1 to prepare nine more seed crystals with graphite paper 6 bonded together. Thread the seed crystal holder 1 to the seed crystal holder positioning ring 2. Place one of the bonded seed crystals with the graphite paper 6 facing down on the surface of the seed crystal holder 1. Then, stack the remaining nine bonded seed crystals in the same manner. After stacking, place another sheet of graphite paper 6 on top of the top seed crystal. Then, place the weighing paper 8 in the center above the positioning ring. Place the positioning block 3 in the center on the weighing paper 8 and press it into the seed crystal holder positioning ring 2 (e.g., ...). Figure 5 (as shown), and then the assembled seed crystal fixing device is moved into the hot press furnace, the hot press furnace cavity door is closed, vacuum is drawn and the temperature is raised to perform a sintering and solidification.
[0045] S3, the sintered seed crystal graphite paper 6 obtained in S2 is uniformly coated with glue on one side, the seed crystal holder 1 is threadedly connected with the seed crystal holder positioning ring 2, the graphite paper 6 coated with glue is bonded on one side to the seed crystal holder 1, the silicon rubber roller 4 is uniformly rolled, the weighing paper 8 with the same outer diameter as the seed crystal holder positioning ring 2 is centrally placed above the positioning ring, the positioning block 3 is centrally placed on the weighing paper 8 and pressed into the seed crystal holder positioning ring 2, then the assembled seed crystal fixing device is moved into the hot press furnace, the hot press furnace cavity door is closed, vacuum is extracted to below 100 pa, then the vacuum pump is stopped to stop vacuum extraction, then argon is filled to make the pressure in the hot press furnace cavity reach 90000 pa, heating is started for secondary sintering and solidification, after sintering, the temperature is lowered to below 50℃, the hot press furnace cavity door is opened, the seed crystal fixing device is taken out, the excess solidified binder on the seed crystal holder 1 is cleaned, and the bonded seed crystal finished product is obtained.
Claims
1. A SiC seed crystal high-efficiency bonding sintering fixing device, characterized in that, include: Seed crystal holder (1), which is threadedly connected to a seed crystal holder positioning ring (2). The seed crystal holder positioning ring (2) is a hollow structure with openings at both ends. A groove (9) for preparing a seed crystal body (7) can be formed between the seed crystal holder positioning ring (2) and the seed crystal holder (1). Graphite paper (6) is provided on the seed crystal holder (1) in the groove (9). A seed crystal positioning ring (5) is provided on the graphite paper (6). The seed crystal positioning ring (5) is slidably disposed in the groove (9). The seed crystal body (7) and the graphite paper (6) are bonded together through the seed crystal positioning ring (5). The positioning block (3) is slidably disposed in the groove (9). Weighing paper (8) is provided between the bottom of the positioning block (3) and the seed crystal support positioning ring (2). The positioning block (3) drives the weighing paper (8) to adhere to the seed crystal body (7) and the graphite paper (6).
2. The SiC seed crystal high-efficiency bonding sintering fixing device according to claim 1, characterized in that: The seed crystal support positioning ring (2) and the seed crystal positioning ring (5) are both circular ring structures, and the positioning pressure block (3) and the graphite paper (6) are both cylindrical structures.
3. The SiC seed crystal high-efficiency bonding sintering fixing device according to claim 2, characterized in that: The positioning block (3), the seed crystal holder (1), the seed crystal holder positioning ring (2) and the seed crystal positioning ring (5) are made of graphite.
4. The SiC seed crystal high-efficiency bonding sintering fixing device according to claim 2, characterized in that: The diameter of the weighing paper (8) is the same as the outer diameter of the seed crystal support positioning ring (2).
5. The SiC seed crystal high-efficiency bonding sintering fixing device according to claim 2, characterized in that: The inner diameter of the seed crystal positioning ring (5) is the same as the diameter of the seed crystal body (7), and the outer diameter of the seed crystal positioning ring (5) is the same as the inner diameter of the seed crystal support positioning ring (2).
6. The SiC seed crystal high-efficiency bonding sintering fixing device according to claim 5, characterized in that: The inner diameter of the seed crystal support positioning ring (2) is the same as the diameter of the positioning block (3) and the graphite paper (6).
7. The SiC seed crystal high-efficiency bonding sintering fixing device according to claim 1, characterized in that: The parallelism and flatness of the seed crystal holder (1) and the positioning block (3) are both less than 5 μm.