Detection device for wafer surface film

Abstract

The utility model discloses a detection device for a wafer surface film. The detection device comprises a process cavity, the bearing part is arranged in the process cavity and is used for bearing a wafer; the detection assembly is arranged in the process cavity and is used for detecting the thin film; the driving device is connected with the bearing part or the detection assembly and is used for enabling the bearing part and the detection assembly to relatively move in the vertical direction so as to enable the detection assembly to detect the thickness of the thin film; or the detection assembly is driven to move in the radial direction of the bearing part, so that the detection assembly detects the edge position of the thin film. According to the utility model, various uncertainties caused by lack of a clear edge removal distance in a traditional measurement method can be overcome, so that the measurement accuracy is improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor equipment process, especially relates to a wafer surface layer film detection device. BACKGROUND

[0002] In the semiconductor manufacturing industry, the RES machine (surface resistance measurement machine) is an important equipment for measuring the film layer deposited on the wafer surface. By accurately measuring the resistance of the film layer, the machine helps engineers evaluate the quality of the film layer and its performance in subsequent processes.

[0003] In the machine software interface, the setting of the edge removal distance is crucial. The edge removal distance refers to the area at the edge of the wafer that needs to be excluded from the measurement results due to possible unevenness or defects. If the engineers do not have a clear definition of the edge removal distance, the machine will not be able to accurately calculate the resistance value at the edge of the wafer. This uncertainty not only affects the accuracy of the measurement, but also may lead to incorrect judgments in subsequent processes, thereby affecting the quality and efficiency of the entire semiconductor production process.

[0004] The four-probe resistance measurement method widely used at present is based on the condition that the geometric size of the measured sample and the probe spacing satisfy the semi-infinite condition. However, in actual application, the measurement of the wafer edge is exactly contrary to this principle. Since the resistance measurement of the wafer edge area is often in the boundary condition of the probe spacing, it leads to a large error in the measurement results of the edge area. This phenomenon not only affects the accuracy of the data, but also has a negative impact on the subsequent process decision.

[0005] Therefore, it is necessary to provide a new wafer surface layer film detection device to solve the above problems existing in the prior art. UTILITY MODEL CONTENT

[0006] The utility model aims at providing a wafer surface layer film detection device to detect the film on the wafer surface, which can overcome various uncertainties caused by the lack of clear edge removal distance in traditional measurement methods, thereby improving the accuracy of the measurement.

[0007] To achieve the above-mentioned purpose, the technical scheme of the utility model is as follows:

[0008] A wafer surface layer film detection device, comprising a process cavity;

[0009] A carrier is arranged in the process cavity to carry the wafer;

[0010] A detection assembly is arranged in the process cavity to detect the film;

[0011] A driving device is connected with the carrier or the detection assembly, and is used for relatively moving the carrier and the detection assembly in a vertical direction, so that the detection assembly detects the thickness of the film, or drives the detection assembly to move along the carrier in a radial direction, so that the detection assembly detects the edge position of the film.

[0012] By adopting the technical scheme, the dual functions of edge detection and film thickness measurement are introduced, so that the thickness and edge position of the film on the wafer surface can be more accurately judged.

[0013] Optionally, the detection assembly comprises a first emitting member and a first receiving member arranged oppositely, the first emitting member is used for emitting a signal, and the first receiving member is used for receiving the signal emitted by the first emitting member.

[0014] The signal emitted by the first emitting member moves from the edge of the wafer towards the film, and after moving to the edge of the film, the signal is intercepted by the edge of the film, so that the first receiving member cannot receive the signal.

[0015] Optionally, the detection assembly further comprises:

[0016] a second emitting member, which is used for emitting a signal.

[0017] a second receiving member connected with the second emitting member.

[0018] The second emitting member emits a signal, and the signal is received by the second receiving member after being reflected by the side wall of the film or the side wall of the wafer.

[0019] The signal emitted by the second emitting member moves from the top of the film towards the wafer, and when moving to the surface of the wafer, the signal is received by the second receiving member after being reflected by the side wall of the wafer.

[0020] Optionally, a plurality of detection assemblies are arranged, and the plurality of detection assemblies are distributed circumferentially along the carrier, so as to detect the edge position or thickness of the film along the circumference of the film.

[0021] Optionally, a track is arranged on the bottom wall of the process chamber or the end surface of the carrier and extends towards the center of the carrier, and the track is used to connect with the detection assembly to limit the movement direction of the detection assembly.

[0022] Optionally, the driving device comprises:

[0023] a first driver connected with the carrier or the detection assembly to make the carrier and the detection assembly move relatively in the vertical direction;

[0024] a second driver connected with the detection assembly to make the detection assembly move towards or away from the wafer along the track.

[0025] Optionally, the track is arranged on the bottom wall of the process chamber; and the first driver is arranged on the bottom wall of the process chamber and / or the track.

[0026] When the first driver is arranged on the bottom wall of the process chamber, the first driver is connected with the carrier to control the movement of the carrier in the vertical direction.

[0027] When the first driver is arranged on the track, the first driver is connected with the detection assembly to control the movement of the detection assembly in the vertical direction.

[0028] Optionally, the second driver is arranged on the bottom wall of the process chamber.

[0029] When the first driver is arranged on the bottom wall of the process chamber, the second driver is connected with the detection assembly to drive the detection assembly to move along the track.

[0030] When the first driver is arranged on the track, the second driver is connected with the first driver or the detection assembly to drive the first driver and the detection assembly to move along the track.

[0031] Optionally, the track is arranged on the end surface of the carrier.

[0032] The first driver is arranged on the track and can move along the track, and the first driver is connected with the detection assembly to drive the detection assembly to move in the vertical direction.

[0033] The second driver is arranged on the carrier and connected with the first driver or the detection assembly to drive the first driver and the detection assembly to move along the track.

[0034] Optionally, a placing groove is arranged on the bottom wall of the carrier, and when the first driver is arranged on the bottom wall of the process chamber and connected with the carrier, the first driver is placed in the placing groove. BRIEF DESCRIPTION OF DRAWINGS

[0035] Figure 1 A plan view of distribution of the detection assembly of the embodiment of the utility model in the process cavity when the track is arranged at the bottom wall of the process cavity;

[0036] Figure 2 A sectional view of position relation of the detection assembly of the embodiment of the utility model in the process cavity when the first driver is arranged at the track;

[0037] Figure 3 A sectional view of position relation of the detection assembly of the embodiment of the utility model in the process cavity when the first driver is arranged at the bottom wall of the process cavity;

[0038] Figure 4 A plan view of distribution of the detection assembly of the embodiment of the utility model in the process cavity when the track is arranged at the end face of the bearing member;

[0039] Figure 5 A schematic view of position relation of the detection assembly of the embodiment of the utility model on the bearing member when the track is arranged at the end face of the bearing member;

[0040] Figure 6 A schematic view of state of the infrared laser and the wafer edge when the detection device of the embodiment of the utility model detects the film edge;

[0041] Figure 7 A schematic view of state of the infrared laser and the film edge when the detection device of the embodiment of the utility model detects the film edge.

[0042] Reference signs:

[0043] 100, wafer; 110, film; 200, process cavity; 210, bearing member; 211, placing groove; 220, track; 300, detection assembly; 310, first emitting member; 320, first receiving member; 330, second receiving member; 340, second emitting member; 410, first driver; 420, second driver. DETAILED DESCRIPTION

[0044] For the purposes of making the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below. Obviously, the described embodiments are some of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of protection of the present application. Unless otherwise defined, the technical terms or scientific terms used herein should be understood as the usual meanings understood by those of ordinary skill in the art to which the present application belongs. The "comprising" and similar words used herein mean that the elements or objects before the words cover the elements or objects listed after the words and their equivalents, without excluding other elements or objects.

[0045] The specific embodiments of the present application will be further described in detail below with reference to the accompanying drawings. Figures 1-7 The specific embodiments of the present application will be further described in detail below with reference to the accompanying drawings.

[0046] At present, the software interface of the machine has a setting of wafer edge removal distance. If the edge removal distance is clear and explicit, it can be directly input in the software interface. If it is not clear, the machine cannot calculate the edge resistance according to the edge removal distance, which affects the accuracy of measurement. Therefore, the embodiments of the present application provide a detection device for detecting the thickness of the film on the surface of a wafer. The detection device comprises:

[0047] The carrier 210 is arranged in the process cavity 200 to carry the wafer 100.

[0048] The detection assembly 300 is arranged in the process cavity 200 to detect the film 110.

[0049] The driving device is connected with the carrier 210 or the detection assembly 300, and is used for relatively moving the carrier 210 and the detection assembly 300 in the vertical direction, so that the detection assembly 300 detects the thickness of the film 110; or drives the detection assembly 300 to move along the carrier 210 in the radial direction, so that the detection assembly 300 detects the edge position of the film 110.

[0050] After the wafer 100 is placed on the carrier 210, the detection assembly 300 is controlled to move by the driving device, and the wafer 100 is detected by the detection assembly 300, so as to detect the thickness of the film 110 on the surface of the wafer 100 and the edge of the film 110.

[0051] In some embodiments, with reference to Figure 3, the detection assembly 300 does not move in the vertical direction, the part of the driving device for controlling the vertical movement is connected with the carrier 210, and the carrier 210 is driven to move in the vertical direction, so that the detection assembly 300 and the carrier 210 move relatively in the vertical direction, so as to detect the thickness of the film 110 on the surface layer of the wafer 100.

[0052] In some embodiments, referring to Figure 2 , the carrier 210 does not move in the vertical direction, the part of the driving device for controlling the vertical movement is connected with the detection assembly 300, and the detection assembly 300 is driven to move in the vertical direction, so that the detection assembly 300 and the carrier 210 move relatively in the vertical direction, so as to detect the thickness of the film 110 on the surface layer of the wafer 100.

[0053] In some embodiments, the part of the driving device for controlling the vertical movement is connected with the detection assembly 300 and the carrier 210 respectively, so that the detection assembly 300 and the carrier 210 move relatively in the vertical direction, so as to detect the thickness of the film 110 on the surface layer of the wafer 100.

[0054] In some embodiments, referring to Figure 1 and Figure 6 , the part of the driving device for controlling the horizontal movement is connected with the detection assembly 300, so as to drive the detection assembly 300 to move along the radial direction of the carrier 210, for detecting the position of the edge of the film 110 on the surface of the wafer 100.

[0055] In order to facilitate the detection assembly 300 to detect the position of the edge of the film 110 on the surface layer of the wafer 100, referring to Figure 6 and Figure 7 , the detection assembly 300 is provided to include a first emitting member 310 and a first receiving member 320 arranged oppositely, the first emitting member 310 is used to emit a signal, and the first receiving member 320 is used to receive the signal emitted by the first emitting member 310.

[0056] The signal emitted by the first emitting member 310 moves from the edge of the wafer 100 towards the film 110, and after moving to the edge of the film 110, the signal is intercepted by the edge of the film 110, so that the first receiving member 320 cannot receive the signal.

[0057] In some embodiments, the first emitting member 310 is a laser emitter, and the signal emitted by the first emitting member 310 is infrared laser.

[0058] Here, the first emitting member 310 is taken as a laser emitter, and the signal emitted by the first emitting member 310 is taken as infrared laser as an example.

[0059] The first emitting member 310 and the first receiving member 320 are arranged on two sides of the wafer 100, and the first emitting member 310 always emits infrared laser during the detection process, and the first receiving member 320 always receives the infrared laser emitted by the first emitting member 310, and is driven by the driving device to simultaneously approach or move away from the wafer 100. During the detection process, the first emitting member 310 and the first receiving member 320 simultaneously approach the wafer 100, and when the infrared laser moves to the edge of the film 110 on the surface layer of the wafer 100, the light path of the infrared laser is blocked by the film 110 on the surface layer of the wafer 100, and the first receiving member 320 cannot receive the infrared laser, at this time, the position detected is the edge position of the film 110 on the surface layer of the wafer 100; at the beginning of the detection, the light path of the infrared laser is adjusted to be located at the edge of the wafer 100, so that the distance from the edge of the wafer 100 to the edge of the film 110 can be detected.

[0060] In order to detect the edge position of the wafer 100 more stably, a plurality of detection assemblies 300 are arranged, and the plurality of detection assemblies 300 are distributed along the circumference of the carrier 210 to detect the edge position or the thickness of the film 110 along the circumference of the film 110.

[0061] In some embodiments, the plurality of detection assemblies 300 can detect the edge position of the film 110 at different positions along the circumference of the film 110 to more accurately determine the edge position of the film 110. At the same time, the plurality of detection assemblies 300 can detect the thickness of the film 110 at different positions along the circumference of the film 110 to more accurately determine the thickness of the film 110.

[0062] In some embodiments, the plurality of detection assemblies 300 are uniformly distributed along the circumference of the carrier 210, which can be distributed on the end face of the carrier 210 or in the process chamber 200. Details are described below.

[0063] In some embodiments, the first emitting member 310 and the first receiving member 320 in the adjacent two detection assemblies 300 are fixed to each other. Here, three detection assemblies 300 are taken as an example, the three detection assemblies 300 are arranged along the axis of the carrier 210, and the first emitting member 310 and the first receiving member 320 in the adjacent two detection assemblies 300 are fixed to each other. In addition, since the first emitting member 310 and the first receiving member 320 move synchronously, the first emitting member 310 and the first receiving member 320 in the three detection assemblies 300 simultaneously approach or move away from the wafer 100 to detect the edges at different positions of the wafer 100, so that the detection result is more accurate.

[0064] In order to facilitate the detection assembly 300 to detect the thickness of the film 110 on the surface layer of the wafer 100, with reference to Figure 2 , the detection assembly 300 further comprises:

[0065] The second transmitter 340 is used to emit signals;

[0066] The second receiver 330 is connected to the second transmitter 340;

[0067] The second transmitter 340 emits a signal, which is reflected by the sidewall of the thin film 110 or the sidewall of the wafer 100 and then received by the second receiver 330.

[0068] The signal emitted by the second transmitter 340 moves from the top of the thin film 110 toward the wafer 100. When it reaches the surface of the wafer 100, the intensity of the reflected signal changes.

[0069] In each detection component 300, reference is made. Figure 4 The second transmitter 340 and the second receiver 330 are connected, wherein the second receiver 330 is used to receive the signal emitted by the second transmitter 340; here, the second transmitter 340 is used as a laser transmitter and the signal emitted by the second transmitter 340 is infrared laser as an example.

[0070] Since the sidewalls of wafer 100 are reflective, the driving device controls the vertical movement of the part that drives the carrier 210 or the detection component 300 to move, causing a relative displacement between the two in the vertical direction. During the detection process, the light path of the infrared laser is located on the upper surface of the thin film 110. The infrared laser moves from the upper surface of the thin film 110 toward the wafer 100 until it reaches the upper surface of the wafer 100. At this time, the infrared laser irradiates the sidewall of the wafer 100, is reflected by the sidewall of the wafer 100, and is received by the second receiver 330 to detect the thickness of the thin film 110.

[0071] Specifically, since the sidewalls of wafer 100 and thin film 110 reflect infrared laser light to different degrees, the intensity of the reflected signal is also different. When the infrared laser light path passes through the sidewall of thin film 110, the intensity of the reflected infrared laser light received by the second receiver 330 is defined as the first intensity. When the infrared laser light path passes through the sidewall of wafer 100, the intensity of the reflected infrared laser light received by the second receiver 330 is defined as the second intensity. When the infrared laser light path moves from the sidewall of thin film 110 to the sidewall of wafer 100, the signal intensity received by the second receiver 330 changes from the first intensity to the second intensity. At this time, the thickness of thin film 110 can be calculated based on the movement speed of the infrared laser light path on the sidewall of thin film 110 and the time it takes for the second receiver 330 to receive the first intensity. The specific calculation method is existing technology and will not be elaborated here.

[0072] In some embodiments, the second transmitter 340 is connected to the first transmitter 310, the second receiver 330 is disposed on the top of the second transmitter 340, and the second transmitter 340 and the second receiver 330 do not interfere with the process of the first transmitter 310 emitting infrared laser.

[0073] In some embodiments, in order to facilitate the second receiver 330 to receive the infrared laser emitted by the second transmitter 340, the second transmitter 340 can be tilted to facilitate the reception by the second receiver 330. The tilting method can be tilted in the vertical direction or in the horizontal direction, without limitation, for the purpose of detection.

[0074] In order to facilitate the horizontal movement of the detection component 300, reference is made. Figure 1 The detection device also includes a track 220, which is located on the bottom wall of the process cavity 200 or the end face of the carrier 210 and extends toward the center of the carrier 210. The track 220 is used to connect with the detection assembly 300 to limit the movement direction of the detection assembly 300.

[0075] In some embodiments, refer to Figure 1 The position of track 220 is adapted to the position of detection component 300. When detection component 300 is located on the bottom wall of process cavity 200, track 220 is located on the bottom wall of process cavity 200; when detection component 300 is located on the end face of support member 210, track 220 is located on the end face of support member 210. At the same time, track 220 extends from a position away from the center of support member 210 toward the center of support member 210 to facilitate the movement of detection component 300.

[0076] In some embodiments, the detection component 300 is disposed on the track 220 and is able to approach or move away from the wafer 100 on the track 220 to facilitate the detection of the edge of the surface film 110 of the wafer 100.

[0077] To facilitate the detection of the movement of component 300, refer to Figure 2 and Figure 3 The drive unit includes:

[0078] The first driver 410 is connected to the carrier 210 or the detection component 300 to enable the carrier 210 and the detection component 300 to move relative to each other in the vertical direction.

[0079] The second driver 420 is connected to the detection component 300 to move the detection component 300 closer to or further away from the wafer 100 along the track 220.

[0080] The driving device comprises a first driver 410 and a second driver 420. The first driver 410 is used for driving in the vertical direction, and the second driver 420 is used for driving movement in the horizontal direction. The first driver 410 can be connected with the carrier 210 or the detection assembly 300, so as to facilitate relative movement of the carrier 210 and the detection assembly 300 in the vertical direction. It is worth noting that, when the first driver 410 drives the detection assembly 300 to move, the first driver 410 can simultaneously drive the first sending member 310, the first receiving member 320, the second sending member 340 and the second receiving member 330 to move. The second driver 420 is connected with the detection assembly 300, so as to drive the detection assembly 300 to move on the track 220. Specifically, the connection mode between the first sending member 310, the first receiving member 320, the second sending member 340 and the second receiving member 330 is a prior art, which will not be described here. For example, it can be understood that the second sending member 340 is arranged at the bottom of the second receiving member 330, and the first sending member 310 and the first receiving member 320 are respectively arranged at two sides of the second sending member 340.

[0081] More specifically, since the track 220 can be arranged on the bottom wall of the process cavity 200, or can be arranged on the end face of the carrier 210, the two cases are introduced respectively.

[0082] The track 220 is arranged on the bottom wall of the process cavity 200. The first driver 410 is arranged on the bottom wall of the process cavity 200 and / or the track 220.

[0083] When the first driver 410 is arranged on the bottom wall of the process cavity 200, the first driver 410 is connected with the carrier 210, so as to control movement of the carrier 210 in the vertical direction.

[0084] When the first driver 410 is arranged on the track 220, the first driver 410 is connected with the detection assembly 300, so as to control movement of the detection assembly 300 in the vertical direction.

[0085] In some embodiments, referring to Figure 1 When the track 220 is arranged on the bottom wall of the process cavity 200, the arrangement mode can be clamping, bolt fixing, etc., which is a prior art and will not be described here. In some more specific embodiments, the first driver 410 is a pneumatic cylinder or an electric cylinder, so as to drive the carrier 210 or the detection assembly 300 to move in the vertical direction.

[0086] In some embodiments, referring to Figure 3, the first driver 410 is arranged on the bottom wall of the process cavity 200, one end is fixed on the bottom wall of the process cavity 200, and the other end is connected with the bearing 210; at this time, the detection assembly 300 will not move in the vertical direction; the first driver 410 is started to drive the bearing 210 to move in the vertical direction, so that the relative movement between the bearing 210 and the detection assembly 300 in the vertical direction occurs, so as to adjust the position of the wafer 100 and the infrared laser, and facilitate the wafer 100 surface film 110 thickness detection process.

[0087] In some embodiments, with reference to Figure 2 , the first driver 410 is arranged on the track 220 and connected with the detection assembly 300; at this time, the bearing 210 will not move in the vertical direction, the first driver 410 is started to drive the detection assembly 300 to move in the vertical direction, so that the relative movement between the bearing 210 and the detection assembly 300 in the vertical direction occurs, so as to adjust the position of the wafer 100 and the infrared laser, and facilitate the wafer 100 surface film 110 thickness detection process. It is worth noting that since the detection assembly 300 needs to move on the track 220, the first driver 410 is arranged on the track 220 in sliding mode, and the first driver 410 and the detection assembly 300 slide on the track 220 synchronously when the detection assembly 300 moves, so as to facilitate the movement of the detection assembly 300 in the horizontal direction.

[0088] In some embodiments, the first driver 410 is arranged on the bottom wall of the process cavity 200 and the track 220, so that the bearing 210 and the detection assembly 300 can move in the vertical direction, so as to facilitate the detection process.

[0089] The second driver 420 is arranged on the bottom wall of the process cavity 200;

[0090] When the first driver 410 is arranged on the bottom wall of the process cavity 200, the second driver 420 is connected with the detection assembly 300 to drive the detection assembly 300 to move along the track 220;

[0091] When the first driver 410 is arranged on the track 220, the second driver 420 is connected with the first driver 410 or the detection assembly 300 to drive the first driver 410 and the detection assembly 300 to move along the track 220.

[0092] In some embodiments, the second driver 420 is a pneumatic cylinder or an electric cylinder, or other devices capable of driving the detection assembly 300 to move, which is not limited here, and the main purpose is to drive the detection assembly 300 to move.

[0093] In some embodiments, in order to detect that the assembly 300 can be aligned with the carrier 210, an adjusting frame is arranged on the track 220, the assembly 300 is arranged on the adjusting frame, and the second driver 420 can be connected with the adjusting frame to drive the assembly 300 to move as the main.

[0094] When the first driver 410 is arranged on the bottom wall of the process cavity 200, i.e., the first driver 410 is not arranged on the assembly 300, the second driver 420 is connected with the assembly 300, and the second driver 420 drives the assembly 300 to move along the track 220, at this time, the second driver 420 can be fixedly arranged on the end of the track 220 or fixedly arranged on the bottom wall of the process cavity 200.

[0095] When the first driver 410 is arranged on the track 220, i.e., the first driver 410 is connected with the assembly 300, the second driver 420 is connected with the first driver 410 or the assembly 300 to drive the first driver 410 and the assembly 300 to move synchronously as the main.

[0096] In order to facilitate the placement of the carrier 210, referring to Figure 3 , the bottom wall of the carrier 210 is provided with a placement groove 211, when the first driver 410 is arranged on the bottom wall of the process cavity 200 and connected with the carrier 210, the first driver 410 is arranged in the placement groove 211.

[0097] When the first driver 410 is arranged in the placement groove 211, the bottom of the carrier 210 abuts against the bottom wall of the process cavity 200 when the first driver 410 is not started, so as to reduce the possibility of damage of the first driver 410.

[0098] The track 220 is arranged on the end surface of the carrier 210;

[0099] The first driver 410 is arranged on the track 220 and can move along the track 220, and the first driver 410 is connected with the assembly 300 to drive the assembly 300 to move in the vertical direction;

[0100] The second driver 420 is arranged on the carrier 210 and connected with the first driver 410 or the assembly 300 to drive the first driver 410 and the assembly 300 to move along the track 220.

[0101] In some embodiments, referring to Figure 4 and Figure 5 , when the track 220 is arranged on the end surface of the carrier 210, the first driver 410 is arranged on the track 220 and can move along the track 220, and the first driver 410 is connected with the assembly 300 to drive the assembly 300 to move in the vertical direction.

[0102] In some embodiments, due to the thin thickness of the wafer 100 surface film 110, the movement distance of the first driver 410 may be too large when the first driver 410 is an electric cylinder or a pneumatic cylinder, and therefore, the first driver 410 can be an electric motor or other device that can drive the detection assembly 300 to rotate, so that the infrared laser emitted by the second emitter 340 rotates, as long as the infrared laser can be moved from the top of the film 110 to the top of the wafer 100 and reflected.

[0103] In some embodiments, the second driver 420 is fixedly arranged on the end surface of the carrier 210 or fixedly arranged on the end portion of the track 220. The second driver 420 is connected with the detection assembly 300 or connected with the first driver 410, which is not limited here, as long as the second driver 420 can drive the first driver 410 and the detection assembly 300 to move synchronously.

[0104] In some embodiments, the second driver 420 is arranged on each detection device, and multiple second drivers 420 are started or stopped at the same time to drive multiple detection devices to move synchronously.

[0105] Through the above scheme, the dual functions of edge detection and film thickness measurement are introduced, so that the thickness and edge position of the wafer 100 surface film 110 can be more accurately judged; Specifically, the present application realizes the relative movement of the detection assembly 300 in the vertical direction and the horizontal direction through the driving device, which ensures that the thickness of the wafer 100 surface film 110 can be accurately measured during the detection process, and the position of the film edge is captured at the same time, forming a complete measurement system, which ensures that reliable measurement data can be obtained in the edge area of the wafer 100. This design effectively overcomes various uncertainties caused by the lack of a clear edge removal distance in traditional measurement methods, thereby improving the accuracy of measurement.

[0106] In addition, the layout design of multiple detection assemblies 300 uniformly distributed along the circumference of the carrier 210 makes the detection of the film 110 edge more comprehensive during the measurement process, avoiding errors that may be caused by a single measurement point. By introducing the track 220 and the driving device, the movement mode of the detection assembly 300 is also optimized, so that it can flexibly and efficiently complete the detection of film thickness and edge position on the basis of limiting the movement direction, thereby ensuring the high consistency and reliability of the wafer 100 surface film 110 performance in actual application.

[0107] The implementation principle of the wafer 100 surface layer film 110 detection assembly 300 is that the wafer 100 is placed on the bearing 210, and the detection assembly 300 is controlled to move by the driving device; the driving device controls the detection assembly 300 to move in the vertical direction, the second emitter 340 emits infrared laser, and the infrared laser moves from the upper end surface of the film 110 to the upper end surface of the wafer 100; when moving to the upper end surface of the wafer 100, the infrared laser is reflected by the side wall of the wafer 100, so as to be received by the second receiver 330; the intensity of the reflection signal received by the second receiver 330 changes, at this time, according to the moving time of the infrared laser, the thickness of the wafer 100 film 110 can be measured. The driving device controls the detection assembly 300 to move in the horizontal direction, the first emitter 310 emits laser, and the laser is received by the first receiver 320; the first emitter 310 and the first receiver 320 move from the edge of the wafer 100 to the edge of the film 110 at the same time; when the light path of the infrared laser emitted by the first emitter 310 is tangent to the edge of the film 110, the infrared laser is blocked by the film 110, and the first receiver 320 cannot receive the infrared laser; at this time, according to the moving time, the edge position of the film 110 can be detected, and the distance from the side wall of the wafer 100 to the side wall of the film 110 can be detected; it is worth noting that before the detection starts, the initial position is fixed in advance; specifically, in the process of detecting the distance from the side wall of the wafer 100 to the side wall of the film 110, the light path of the infrared laser emitted by the first emitter 310 is tangent to the edge of the wafer 100; at this time, it is the initial position of the first emitter 310; on this basis, the first emitter 310 moves towards the center of the wafer 100 until the light path of the infrared laser emitted by the first emitter 310 is tangent to the edge of the film 110; at this time, according to the moving speed of the first emitter 310 and the time of the two tangents of the laser light path, the distance from the side wall of the wafer 100 to the side wall of the film 110 can be calculated, and the specific calculation method is the prior art, which is not described here.

[0108] Although the embodiments of the present application are described in detail above, it is obvious for those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that such modifications and changes all belong to the scope and spirit of the present application described in the claims. Moreover, the present application described herein can have other embodiments, and can be implemented or realized in various ways.

Claims

1. A device for detecting thin films on the surface of a wafer, characterized in that, The process cavity (200) comprises: a carrier (210) arranged in the process cavity (200) to carry a wafer (100); a detection assembly (300) arranged in the process cavity (200) to detect a film (110); a driving device connected with the carrier (210) or the detection assembly (300) to make the carrier (210) and the detection assembly (300) relatively move in a vertical direction, so that the detection assembly (300) detects the thickness of the film (110), or drives the detection assembly (300) to move along the radial direction of the carrier (210), so that the detection assembly (300) detects the edge position of the film (110).

2. The detection device of claim 1, wherein, The detection assembly (300) comprises a first emitter (310) and a first receiver (320) arranged oppositely, the first emitter (310) is used to emit a signal, and the first receiver (320) is used to receive the signal emitted by the first emitter (310); The signal emitted by the first emitter (310) moves from the edge of the wafer (100) towards the film (110), and after moving to the edge of the film (110), the signal is intercepted by the edge of the film (110), so that the first receiver (320) cannot receive the signal.

3. The detection device of claim 2, wherein, The detection assembly (300) further comprises: a second emitter (340) arranged in the process cavity (200) to emit a signal; a second receiver (330) connected with the second emitter (340); The signal emitted by the second emitter (340) is reflected by the sidewall of the film (110) or the sidewall of the wafer (100) and is received by the second receiver (330); The signal emitted by the second emitter (340) moves from the top of the film (110) towards the wafer (100), and when moving to the surface of the wafer (100), the reflected signal intensity changes.

4. The detection device of claim 1, wherein, A plurality of detection assemblies (300) are arranged circumferentially along the carrier (210) to detect the edge position or thickness of the film (110) along the circumference of the film (110).

5. The detection device of claim 1, wherein, Further comprising a track (220) arranged on the bottom wall of the process cavity (200) or the end surface of the carrier (210) and extending towards the center of the carrier (210), the track (220) is used to connect with the detection assembly (300) to limit the movement direction of the detection assembly (300).

6. The detection device of claim 5, wherein, The driving device comprises: a first driver (410) connected with the carrier (210) or the detection assembly (300) to make the carrier (210) and the detection assembly (300) relatively move in a vertical direction; a second driver (420) connected with the detection assembly (300) to make the detection assembly (300) move towards or away from the wafer (100) along the track (220).

7. The detection device of claim 6, wherein, The track (220) is arranged on a bottom wall of the process cavity (200); the first driver (410) is arranged on the bottom wall of the process cavity (200) and / or the track (220); When the first driver (410) is arranged on the bottom wall of the process cavity (200), the first driver (410) is connected with the carrier (210) to control the carrier (210) to move in the vertical direction; When the first driver (410) is arranged on the track (220), the first driver (410) is connected with the detection assembly (300) to control the detection assembly (300) to move in the vertical direction.

8. The detection device of claim 7, wherein, The second driver (420) is arranged on the bottom wall of the process cavity (200); When the first driver (410) is arranged on the bottom wall of the process cavity (200), the second driver (420) is connected with the detection assembly (300) to drive the detection assembly (300) to move along the track (220); When the first driver (410) is arranged on the track (220), the second driver (420) is connected with the first driver (410) or the detection assembly (300) to drive the first driver (410) and the detection assembly (300) to move along the track (220).

9. The detection device of claim 6, wherein, The track (220) is arranged on an end surface of the carrier (210); The first driver (410) is arranged on the track (220) and is movable along the track (220), and the first driver (410) is connected with the detection assembly (300) to drive the detection assembly (300) to move in the vertical direction; The second driver (420) is arranged on the carrier (210) and is connected with the first driver (410) or the detection assembly (300) to drive the first driver (410) and the detection assembly (300) to move along the track (220).

10. The detection device of claim 7, wherein, A placing groove (211) is arranged on a bottom wall of the carrier (210), and when the first driver (410) is arranged on the bottom wall of the process cavity (200) and is connected with the carrier (210), the first driver (410) is arranged in the placing groove (211).

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