Broadband waveguide bridge with microstrip probe and solid-state power amplifier thereof
By designing a broadband waveguide bridge with a microstrip probe and employing a waveguide bridge component and coupling window structure that are symmetrical about the longitudinal and transverse axes, the problems of high loss and low isolation in the existing technology are solved, and high isolation and low loss broadband high-power solid-state power amplifier synthesis is realized.
Patent Information
- Application Number
- CN202520489471.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-20
- Publication Date
- 2026-02-06
- Estimated Expiration
- 2035-03-20
AI Technical Summary
Existing high-power solid-state power amplifier combining methods suffer from high losses, low isolation, and poor standing wave ratio at the branch ends, which can easily lead to increased chip reflection and burnout, especially in broadband applications.
Design a broadband waveguide bridge with a microstrip probe, including a waveguide bridge assembly and a waveguide-to-microstrip probe assembly with longitudinal and transverse axis symmetry. Employ a connection coupling section and a coupling window structure, combined with a high-order mode suppression cavity and an air cavity, to achieve efficient conversion and matching of radio frequency signals.
It achieves an isolation greater than 20dB in the K-band, a standing wave ratio of less than 1.3 at four ports, and an insertion loss of less than 0.35dB. It has a simple structure, is easy to manufacture, and is suitable for broadband high-power solid-state power amplifier synthesis.
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Figure CN223884613U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to solid state power amplifier technical field especially a kind of broadband waveguide electric bridge with microstrip probe and its solid state power amplifier. BACKGROUND
[0002] At present, the synthesis mode of high-power solid state power amplifier mainly has two categories of plane synthesis and waveguide synthesis. Among them, the solid state power amplifier of plane synthesis mode is increased with the increase of loss along with frequency, and the synthesis efficiency is greatly discounted when multiple synthesis, and the limited power is borne, at this time, the advantage of waveguide synthesis is obvious. In addition, the commonly used waveguide synthesis mode has radial synthesis, waveguide power divider and other ways, and the isolation is not very high when being applied in wideband, and the branch end standing wave is also poor, which can easily lead to increased reflection when cascaded with amplifier chip, and there is great safety hazard.
[0003] Therefore, it is urgent to provide a broadband waveguide electric bridge with microstrip probe and its solid state power amplifier with simple structure, high isolation, good port matching and low loss. SUMMARY
[0004] In view of the above problems, the utility model aims at providing a broadband waveguide electric bridge with microstrip probe and its solid state power amplifier, and the technical scheme adopted by the utility model is as follows:
[0005] A broadband waveguide electric bridge with microstrip probe comprises a first waveguide electric bridge assembly and a second waveguide electric bridge assembly with the same structure, and a waveguide-to-microstrip probe assembly connected between the upper parts of the first waveguide electric bridge assembly and the second waveguide electric bridge assembly and between the lower parts of the first waveguide electric bridge assembly and the second waveguide electric bridge assembly, respectively; the waveguide-to-microstrip probe assembly is arranged in longitudinal axis symmetry; the first waveguide electric bridge assembly and the second waveguide electric bridge assembly are arranged in longitudinal axis and transverse axis symmetry;
[0006] The first waveguide electric bridge assembly comprises a first waveguide channel assembly and a second waveguide channel assembly arranged back-to-back and in C shape, a plurality of connection coupling parts connected between the first waveguide channel assembly and the second waveguide channel assembly, and a coupling window arranged between adjacent connection coupling parts;
[0007] The waveguide-to-microstrip probe assembly comprises a first waveguide-to-microstrip probe assembly and a second waveguide-to-microstrip probe assembly which are mirror images of each other; the first waveguide-to-microstrip probe assembly comprises a high-order mode suppression cavity and an air cavity, a microstrip probe substrate arranged in the high-order mode suppression cavity and the air cavity, and a probe line, a high-resistance line, an impedance gradient line and a microstrip line which are sequentially connected and printed on the microstrip probe substrate; the microstrip line of the first waveguide-to-microstrip probe assembly is connected with the microstrip line of the second waveguide-to-microstrip probe assembly; and the probe line is connected with one end of the first waveguide channel assembly and the second waveguide channel assembly in one-to-one correspondence.
[0008] Further, the first waveguide channel assembly comprises a waveguide port and a parallel waveguide which are integrally formed, and a circular chamfer arranged between the waveguide port and the parallel waveguide; the waveguide port, the parallel waveguide and the circular chamfer jointly form a C shape; and the probe line is connected with the waveguide port.
[0009] A solid-state power amplifier is provided with a broadband waveguide bridge with a microstrip probe.
[0010] Compared with the prior art, the utility model has the following beneficial effects:
[0011] The utility model discloses a first waveguide bridge assembly and a second waveguide bridge assembly which are symmetrical along the longitudinal axis and the transverse axis are arranged, and a waveguide-to-microstrip probe assembly which is symmetrical along the longitudinal axis and the transverse axis is arranged, which has simple structure and is easy to process. In addition, the utility model discloses a connecting coupling part and a coupling window are arranged, which ensures high isolation, good port matching, low insertion loss and other advantages, so that the waveguide bridge has an isolation of greater than 20dB in the whole K wave band, four port standing waves are less than 1.3, and insertion loss is less than 0.35dB, which can be applied to K wave band broadband high-power solid-state power amplifier synthesis. In conclusion, the utility model has the advantages of simple structure, high isolation, good port matching, low loss and the like, and has high practical value and popularization value in the field of solid-state power amplifier technology. BRIEF DESCRIPTION OF DRAWINGS
[0012] In order to more clearly illustrate the technical scheme of the utility model embodiment, the following will be to the embodiment needed to use the drawing briefly introduced, should understand, the following drawing only shows some embodiments of the utility model, therefore should not be regarded as the limitation to the scope of protection, for those skilled in the art, under the premise of not paying creative labor, can also obtain other related drawings according to these drawings.
[0013] Figure 1 It is a perspective structural schematic view of the utility model.
[0014] Figure 2 It is a structural schematic view of the utility model.
[0015] Figure 3The utility model discloses a waveguide bridge structure schematic diagram.
[0016] Figure 4 The utility model discloses a waveguide bridge structure schematic diagram.
[0017] Figure 5 The utility model discloses a waveguide bridge structure schematic diagram.
[0018] Figure 6 The utility model discloses a waveguide bridge structure schematic diagram.
[0019] Figure 7 The utility model discloses a waveguide bridge structure schematic diagram.
[0020] Figure 8 The utility model discloses a waveguide bridge structure schematic diagram.
[0021] Figure 9 The utility model discloses a waveguide bridge structure schematic diagram.
[0022] Figure 10 The utility model discloses a waveguide bridge structure schematic diagram.
[0023] Figure 11 The utility model discloses a waveguide bridge structure schematic diagram.
[0024] Figure 12 The utility model discloses a waveguide bridge structure schematic diagram.
[0025] Figure 13 The utility model discloses a waveguide bridge structure schematic diagram.
[0026] Figure 14 The utility model discloses a waveguide bridge structure schematic diagram.
[0027] Figure 15 The utility model discloses a waveguide bridge structure schematic diagram.
[0028] In the above drawing, the component name corresponding to the sign is as follows:
[0029] 1, first waveguide bridge assembly; 2, second waveguide bridge assembly; 3, waveguide-to-microstrip probe assembly; 11, waveguide port; 12, parallel waveguide; 13, connection coupling part; 14, coupling window; 15, circular chamfer part; 31, microstrip probe substrate; 32, high mode suppression cavity; 33, air cavity; 34, probe line; 35, high resistance line; 36, impedance tapered line; 37, microstrip line. DETAILED DESCRIPTION
[0030] For the purpose, technical scheme and advantages of the present application to be clearer, the present application will be further described below in conjunction with the drawings and embodiments. The embodiments of the present application include but are not limited to the following embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of the present application.
[0031] In the present embodiment, the term "and / or" is merely a description of the association relationship of the associated objects, indicating that there can be three relationships, for example, A and / or B, which can represent the three cases of A alone, A and B together, and B alone.
[0032] The terms "first" and "second" and the like in the description and claims of the present embodiment are used to distinguish different objects, and are not used to describe the specific order of the objects. For example, the first target object and the second target object are used to distinguish different target objects, and are not used to describe the specific order of the target objects.
[0033] In the embodiments of the present application, the words "exemplary" or "for example" are used to mean serving as an example, instance, or illustration. Any embodiment or design scheme described as "exemplary" or "for example" in the embodiments of the present application should not be construed as being more preferred or advantageous than other embodiments or design schemes. Rather, the use of "exemplary" or "for example" is intended to present relevant concepts in a concrete manner.
[0034] In the description of the embodiments of the present application, unless otherwise specified, the meaning of "a plurality of" is two or more. For example, a plurality of processing units refers to two or more processing units; a plurality of systems refers to two or more systems.
[0035] As Figures 1 to 15As shown, the embodiment provides a solid-state power amplifier, which is provided with a broadband waveguide bridge with microstrip probes, the broadband waveguide bridge with microstrip probes comprises first waveguide bridge assembly 1 and second waveguide bridge assembly 2 which are structurally identical, and waveguide-to-microstrip probe assembly 3 connected between the upper part of first waveguide bridge assembly 1 and the upper part of second waveguide bridge assembly 2 and between the lower part of first waveguide bridge assembly 1 and the lower part of second waveguide bridge assembly 2 respectively. Wherein, the waveguide-to-microstrip probe assembly 3 is longitudinally axisymmetrically arranged, and the first waveguide bridge assembly 1 and the second waveguide bridge assembly 2 are longitudinally axisymmetrically and transversely axisymmetrically arranged.
[0036] Here, taking the first waveguide bridge assembly 1 as an example, it comprises first waveguide channel assembly and second waveguide channel assembly which are arranged back-to-back and in C shape, a plurality of connection coupling parts 13 connected between the first waveguide channel assembly and the second waveguide channel assembly, and coupling windows 14 arranged between adjacent connection coupling parts 13. Wherein, the first waveguide channel assembly and the second waveguide channel assembly are structurally identical, taking the first waveguide channel assembly as an example, it comprises waveguide port 11, parallel waveguide 12 and circular chamfer 15 which jointly form C shape. Wherein, the connection coupling part 13 and the coupling window 14 are arranged at the corresponding position of the parallel waveguide 12.
[0037] In the embodiment, in order to verify the performance of the first waveguide bridge assembly 1 and the second waveguide bridge assembly 2, standing wave, distribution S parameter, port isolation, output port phase and other tests are carried out, as shown in the figure. Figures 5 to 8 Wherein, the first waveguide bridge assembly 1 is a four-port network which is matched and reciprocal at each port, when a certain port is used as an input port, the other three ports are determined as an isolation port, a 0° output port and a 90° output port in turn. After the input signal is coupled through the coupling window, part of the signal is coupled to the coupling output port, and the other part is output by the through port, and the phase difference between the two ports is 90°.
[0038] Wherein, in the standing wave test of Figure 5 , the waveguide 3dB bridge has a standing wave of 1.25 or less at the four ports in the K band (18-27GHz), and the port matching is good. In addition, as shown in the figure, Figure 6 , the isolation of the output port of the waveguide 3dB bridge is 20dB or less in the K band (18-27GHz), and the port isolation is good. As shown in the figure, Figure 7 , the isolation of the output port of the waveguide 3dB bridge is 20dB or less in the K band (18-27GHz), and the port isolation is good.
[0039] In this embodiment, the waveguide 3dB bridge is not easily integrated with the chip circuit, so a waveguide-to-microstrip probe needs to be loaded at the output end for transition. The microstrip probe uses Rogers 5880 substrate with a thickness of 0.254mm, a dielectric constant of 2.2, a tangent loss of 0.0009, and copper layers of 0.035mm on both sides. The entire part consists of a waveguide cavity, a microstrip probe substrate, a high-order mode suppression cavity, and an air cavity. The upper layer of the microstrip probe substrate mainly consists of probe lines extending into the waveguide cavity, high-resistivity lines, impedance gradient lines, and 50-ohm microstrip lines. The lower layer is copper-clad except for the area extending into the waveguide cavity, which is free of copper, to facilitate close contact with the metal ground.
[0040] Specifically, the waveguide-to-microstrip probe assembly 3 includes a first waveguide-to-microstrip assembly and a second waveguide-to-microstrip assembly that are mirror-opposite to each other. The first waveguide-to-microstrip assembly includes a high-order mode suppression cavity 32 and an air cavity 33, a microstrip probe substrate 31 disposed within the high-order mode suppression cavity 32 and the air cavity 33, and probe lines 34, high-resistivity lines 35, impedance gradient lines 36, and microstrip lines 37 printed on the microstrip probe substrate 31 and connected in sequence. Among them, the microstrip lines 37 of the first waveguide-to-microstrip assembly are connected to the microstrip lines 37 of the second waveguide-to-microstrip assembly, and the probe lines 34 are connected one-to-one with one end of the first waveguide channel assembly and the second waveguide channel assembly.
[0041] Waveguide cavities primarily enable radio frequency (RF) signals to propagate through waveguides. Compared to transmission in a dielectric medium, waveguide cavities offer lower transmission loss and higher power handling capacity. High-order mode suppression cavities prevent high-order modes from coupling onto the microstrip line due to structural spatial changes when switching from waveguide to planar transmission, thus avoiding interference. Air cavities ensure normal RF signal transmission on the microstrip line; their height generally needs to be greater than 1 / 4 wavelength of the operating frequency, but should not be too high to avoid resonance. Probe striplines are used to couple waveguide signals to the microstrip line. High-impedance lines and impedance-gradient lines are used for impedance matching between the probe striplines and the 50-ohm microstrip line.
[0042] This embodiment tests a waveguide-to-microstrip probe, such as... Figure 9 As shown, the waveguide-to-microstrip probe structure exhibits a port VSWR below 1.25 in the K-band (18-27 GHz), indicating good port matching. Figure 10 As shown, the waveguide-to-microstrip probe structure exhibits a low insertion loss of less than 0.15 in the K-band (18-27 GHz).
[0043] This embodiment also tests a waveguide bridge with a waveguide-to-microstrip probe assembly, such as... Figure 11 As shown, after loading the microstrip probe with a 3dB bridge, the VSWR at the K-band (18-27GHz) port is below 1.3, indicating good port matching. Figures 12 to 13As shown, the waveguide 3dB bridge loaded microstrip probe is back-to-back, and the insertion loss is below 0.7dB in the K band (18-27GHz), and the single-side insertion loss is less than 0.35dB, and the loss is small.
[0044] As shown in the figure, Figure 15 As shown, the waveguide 3dB bridge loaded microstrip probe is back-to-back, and the insertion loss is below 0.7dB in the K band (18-27GHz), and the single-side insertion loss is less than 0.35dB, and the loss is small.
[0045] The principle of the embodiment is as follows:
[0046] The radio frequency signal is input through the waveguide input port of the bridge, and then the signal is divided into two signals with a phase difference of 90 degrees through the coupling window, and the two output signals are converted into a plane transmission mode through the waveguide-to-microstrip structure. The back-to-back structure is convenient for testing the loss of the waveguide bridge loaded microstrip probe, and is actually used as a power divider and synthesizer of a solid-state power amplifier. The radio frequency signal is input through the waveguide input port of the bridge, and then the signal is divided into two signals with a phase difference of 90 degrees through the coupling window, and the two output signals are converted into a plane transmission mode through the waveguide-to-microstrip structure.
[0047] The above embodiment is only a preferred embodiment of the present application, and is not a limitation on the protection scope of the present application, but any change made by using the design principle of the present application and on the basis of non-creative labor should be within the protection scope of the present application.
Claims
1. A broadband waveguide bridge with a microstrip probe, characterized in that, The system includes a first waveguide bridge assembly (1) and a second waveguide bridge assembly (2) with identical structures, and a waveguide-to-microstrip probe assembly (3) connected between the upper part of the first waveguide bridge assembly (1) and the upper part of the second waveguide bridge assembly (2), and between the lower part of the first waveguide bridge assembly (1) and the lower part of the second waveguide bridge assembly (2); the waveguide-to-microstrip probe assembly (3) is arranged symmetrically along the longitudinal axis; the first waveguide bridge assembly (1) and the second waveguide bridge assembly (2) are arranged symmetrically along the longitudinal axis and the transverse axis. The first waveguide bridge assembly (1) includes a first waveguide channel assembly and a second waveguide channel assembly arranged back to back and in a C shape, a number of connection coupling parts (13) connecting the first waveguide channel assembly and the second waveguide channel assembly, and a coupling window (14) disposed between adjacent connection coupling parts (13); The waveguide-to-microstrip probe assembly (3) includes a first waveguide-to-microstrip assembly and a second waveguide-to-microstrip assembly that are mirror images of each other; the first waveguide-to-microstrip assembly includes a high-order mode suppression cavity (32) and an air cavity (33), a microstrip probe substrate (31) disposed in the high-order mode suppression cavity (32) and the air cavity (33), and a probe line (34), a high-resistance line (35), an impedance gradient line (36) and a microstrip line (37) printed on the microstrip probe substrate (31) and connected in sequence; the microstrip line (37) of the first waveguide-to-microstrip assembly is connected to the microstrip line (37) of the second waveguide-to-microstrip assembly; the probe line (34) is connected to one end of the first waveguide channel assembly and the second waveguide channel assembly respectively.
2. The broadband waveguide bridge with microstrip probe according to claim 1, characterized in that, The first waveguide channel assembly includes an integrally formed waveguide port (11) and a parallel waveguide (12), as well as a circular chamfered portion (15) disposed between the waveguide port (11) and the parallel waveguide (12); the waveguide port (11), the parallel waveguide (12) and the circular chamfered portion (15) together form a C shape; the probe line (34) is connected to the waveguide port (11).
3. A solid-state power amplifier, characterized in that, The broadband waveguide bridge with microstrip probe as described in claim 1 or 2 is provided.