Tunnel magnetoresistive sensor and input device with same

Abstract

The tunnel magnetoresistive sensor comprises a VDD pin, a VSS pin, an SDI pin and an SDO pin, the VDD pin of the tunnel magnetoresistive sensor is connected with a VDD pin of a main control chip, the VSS pin of the tunnel magnetoresistive sensor is connected with a VSS pin of the main control chip, the SDI pin of the tunnel magnetoresistive sensor is used for inputting signals, and the SDO pin of the tunnel magnetoresistive sensor is used for outputting the signals. The first SDO pin of the tunnel magnetoresistive sensor is used for outputting signals. Therefore, the tunnel magnetoresistive sensor converts digital values according to the magnetic field intensity applied to the tunnel magnetoresistive sensor, communicates with the main control chip through the pins and is connected in series with the main control chip, so that the efficiency can be improved, and the power consumption can be reduced. In addition, the utility model also provides an input device with the tunnel magnetoresistive sensor, which can simultaneously detect the downward pressing and the left-right movement of the action element so as to realize the return rate of the quick response of the action element.

Description

Technical Field

[0001] This utility model relates to an input device, specifically to a tunnel magnetoresistive sensor and an input device having the same. Background Technology

[0002] Currently, keyboards are mainly divided into mechanical keyboards, optical keyboards, and membrane keyboards. Mechanical keyboards sense key states by switching metal contacts on and off, optical keyboards sense key states by detecting whether light is blocked, and membrane keyboards sense key states by connecting and disconnecting metal contacts and conductive materials. All of these keyboards can only detect the two states of a key being pressed and released; they cannot detect the key travel distance.

[0003] Another type of keyboard uses Hall effect sensors to detect key travel. Since the magnetic field strength varies depending on the distance between the Hall effect sensor and the magnetic field source, users can adjust the key feel and set the key travel threshold according to their preferences. However, current keyboards using Hall effect sensors still employ matrix scanning for control. Matrix scanning is slow and can cause interference when multiple keys are pressed, leading to distorted input. Utility Model Content

[0004] The main objective of this invention is to provide a tunnel magnetoresistive sensor that, when applied to an input device, can improve the efficiency and sensitivity of the input device.

[0005] To achieve the aforementioned main objectives, the tunnel magnetoresistive sensor provided by this invention is connected in series with a main control chip, and includes a VDD pin, a VSS pin, a first SDI pin, and a first SDO pin. The VDD pin of the tunnel magnetoresistive sensor is connected to a VDD pin of the main control chip; the VSS pin of the tunnel magnetoresistive sensor is connected to a VSS pin of the main control chip; the first SDI pin of the tunnel magnetoresistive sensor is used to input a signal; and the first SDO pin of the tunnel magnetoresistive sensor is used to output the signal.

[0006] As can be seen from the above, the tunnel magnetoresistive sensor of this utility model converts the magnetic field strength applied to it into a digital value, communicates with the main control chip through each of the pins and is connected in series in a daisy chain manner, which can improve efficiency and reduce power consumption.

[0007] In other embodiments, the tunnel magnetoresistive sensor of the present invention further includes a second SDI pin and a second SDO pin, wherein the second SDI pin is used to input a signal and the second SDO pin is used to output the signal, thereby enabling the tunnel magnetoresistive sensor of the present invention to support bidirectional transmission.

[0008] In other embodiments, the tunnel magnetoresistive sensor of this invention further includes at least one LED driving pin for connecting to and driving an LED.

[0009] In other embodiments, the tunnel magnetoresistive sensor of this invention further includes an SCK pin for connecting to an SCK pin of the main control chip and receiving a clock signal provided by the main control chip, thereby completing the transmission of synchronous data.

[0010] A secondary objective of this invention is to provide an input device comprising a main control chip and at least two tunnel magnetoresistive (TMR) sensors. The main control chip has a VDD pin, a VSS pin, an SDI pin, and an SDO pin. The TMR sensors are daisy-chained to the main control chip, and each TMR sensor has a VDD pin, a VSS pin, a first SDI pin, and a first SDO pin. The VDD pins of the TMR sensors are connected to the VDD pin of the main control chip, and the VSS pins of the TMR sensors are connected to the VSS pin of the main control chip. The first SDI pin and the first SDO pin of one TMR sensor are respectively connected to the SDO pin of the main control chip and the first SDI pin of another TMR sensor, and the first SDO pin of the other TMR sensor is connected to the SDI pin of the main control chip.

[0011] As can be seen from the above, the input device of this utility model connects the main control chip and the tunnel magnetoresistive sensors in series in a daisy chain manner. This allows for the simultaneous detection of the pressing and left-right movement of each button, thereby improving the resolution of the change in the travel accuracy of each button and achieving a fast response rate for each button. It also solves the problem of mutual interference when different buttons are pressed at the same time.

[0012] In other embodiments, the VDD pin of the main control chip is connected to two LEDs, and these LEDs are connected to the VDD pin of the main control chip. Each tunnel magnetoresistive sensor also has an LED driving pin, which is connected to the LEDs and used to drive the LEDs.

[0013] In other embodiments, the main control chip also has an SCK pin, and each tunnel magnetoresistive sensor also has an SCK pin. The SCK pin of the main control chip is connected to the SCK pin of each tunnel magnetoresistive sensor to input a clock signal to each tunnel magnetoresistive sensor, so that each tunnel magnetoresistive sensor can complete the transmission of synchronous data.

[0014] Another object of this invention is to provide another input device, which includes a main control chip and at least two tunnel magnetoresistive sensors. The main control chip has a VDD pin, a VSS pin, an SDI pin, and an SDO pin; the tunnel magnetoresistive sensors are daisy-chained to the main control chip, and each tunnel magnetoresistive sensor has a VDD pin, a VSS pin, a first SDI pin, a first SDO pin, a second SDI pin, and a second SDO pin, wherein the VDD pins of the tunnel magnetoresistive sensors are connected to the VDD pin of the main control chip, the VSS pins of the tunnel magnetoresistive sensors are connected to the VSS pin of the main control chip, the first SDI pin and the second SDO pin of one tunnel magnetoresistive sensor are respectively connected to the SDO pin and the SDI pin of the main control chip, and the first SDO pin and the second SDI pin of the tunnel magnetoresistive sensor connected to the main control chip are respectively connected to the first SDI pin and the second SDO pin of the other tunnel magnetoresistive sensor.

[0015] As can be seen from the above, another input device of this utility model also connects the main control chip and the tunnel magnetoresistive sensors in series in a daisy chain manner. This allows for the simultaneous detection of the pressing and left and right movement of each button, thereby improving the resolution of the change in the travel accuracy of each button and achieving a fast response rate for each button. It also solves the problem of mutual interference when different buttons are pressed at the same time.

[0016] In other embodiments, the VDD pin of the main control chip is connected to two LEDs, and each tunnel magnetoresistive sensor also has an LED driving pin, which is connected to the LEDs and used to drive the LEDs.

[0017] In other embodiments, each tunnel magnetoresistive sensor further includes an SCK pin, and the SCK pin of the main control chip is connected to the SCK pin of each tunnel magnetoresistive sensor for inputting a clock signal to each tunnel magnetoresistive sensor, so that each tunnel magnetoresistive sensor can complete the transmission of synchronous data.

[0018] Detailed descriptions of the structure, features, assembly, and usage of the tunnel magnetoresistive sensor and its input device provided by this invention will be given in the following detailed description of the embodiments. However, those skilled in the art will understand that these detailed descriptions and the specific embodiments listed for implementing this invention are merely illustrative and not intended to limit the scope of the claims. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the tunnel magnetoresistive sensor according to the first embodiment of the present invention.

[0020] Figure 2 A circuit diagram of the input device for the tunnel magnetoresistive sensor according to the first embodiment of this utility model.

[0021] Figure 3 This is a schematic diagram of the tunnel magnetoresistive sensor according to the second embodiment of the present invention.

[0022] Figure 4 The circuit diagram shows the input device of the tunnel magnetoresistive sensor according to the second embodiment of this utility model.

[0023] Figure 5 This is a schematic diagram of the tunnel magnetoresistive sensor according to the third embodiment of the present invention.

[0024] Figure 6 The circuit diagram shows the input device of the tunnel magnetoresistive sensor according to the third embodiment of this utility model.

[0025] Figure 7 This is a schematic diagram of the tunnel magnetoresistive sensor according to the fourth embodiment of the present invention.

[0026] Figure 8 The circuit diagram shows the input device of the tunnel magnetoresistive sensor according to the fourth embodiment of this utility model.

[0027] Figure 9 This is a schematic diagram of the tunnel magnetoresistive sensor according to the fifth embodiment of the present invention.

[0028] Figure 10 The circuit diagram shows the input device of the tunnel magnetoresistive sensor according to the fifth embodiment of this utility model.

[0029] Figure 11 This is a schematic diagram of the tunnel magnetoresistive sensor according to the sixth embodiment of the present invention.

[0030] Figure 12 The circuit diagram shows the input device of the tunnel magnetoresistive sensor according to the sixth embodiment of this utility model.

[0031] Figure 13 This is a schematic diagram of the tunnel magnetoresistive sensor according to the seventh embodiment of the present invention.

[0032] Figure 14 A circuit diagram of the input device for the tunnel magnetoresistive sensor according to the seventh embodiment of this utility model.

[0033] Figure 15 This is a schematic diagram of the tunnel magnetoresistive sensor according to the eighth embodiment of the present invention.

[0034] Figure 16 The circuit diagram shows the input device of the tunnel magnetoresistive sensor according to the eighth embodiment of this utility model.

[0035] The meanings of the reference numerals in the above figures are as follows:

[0036] 1: Input device

[0037] 2: Input device

[0038] 3: Input device

[0039] 4: Input device

[0040] 5: Input device

[0041] 6: Input device

[0042] 7: Input device

[0043] 8: Input device

[0044] 10: Main control chip

[0045] 11: VDD pin

[0046] 12: VSS pin

[0047] 13: SDI pin

[0048] 14: SDO pin

[0049] 15: SCK pin

[0050] 20: Tunnel magnetoresistive sensor

[0051] 21: VDD pin

[0052] 22: VSS pin

[0053] 23: First SDI pin

[0054] 24: First SDO pin

[0055] 25: SCK pin

[0056] 26: LED driver pin

[0057] 30: LED

[0058] 40: Tunnel Magnetoresistive Sensor

[0059] 41: VDD pin

[0060] 42: VSS pin

[0061] 43: First SDI pin

[0062] 44: First SDO pin

[0063] 45: Second SDI pin

[0064] 46: Second SDO pin

[0065] 47: SCK pin

[0066] 48: LED driver pin Detailed Implementation

[0067] First, it should be noted that throughout this specification, including the embodiments described below and the claims, all directional terms are based on the directions shown in the accompanying drawings. Second, in the embodiments and drawings described below, the same element reference numerals represent the same or similar elements or their structural features.

[0068] Please see Figure 1 and Figure 2 The input device 1 of the first embodiment of this utility model can be a keyboard, mouse, or joystick, etc. In this embodiment, a keyboard is used as an example. The input device 1 of the first embodiment of this utility model includes a main control chip 10 and at least two tunnel magnetoresistive sensors 20. The number of tunnel magnetoresistive sensors 20 is multiple and can be increased or decreased according to actual needs, which is not limited here.

[0069] The main control chip 10 has a VDD pin 11, a VSS pin 12, an SDI pin 13 and an SDO pin 14.

[0070] like Figure 1 As shown, each tunnel magnetoresistive sensor 20 has a VDD pin 21, a VSS pin 22, a first SDI pin 23, and a first SDO pin 24. The VSS pin 22 and VDD pin 21 are located on the same side, and the first SDI pin 23 is located on the same side as the VDD pin 21 and VSS pin 22, used to input a first signal. The first SDO pin 24 and first SDI pin 23 are located on opposite sides, used to output the aforementioned first signal. Figure 2 As shown, the VDD pin 21 of each tunnel magnetoresistive sensor 20 is connected to the VDD pin 11 of the main control chip 10, and the VSS pin 22 of each tunnel magnetoresistive sensor 20 is connected to the VSS pin 12 of the main control chip 10. Furthermore, from... Figure 2From left to right, the first SDI pin 23 of the first tunnel magnetoresistive sensor 20 is connected to the SDO pin 14 of the main control chip 10; the first SDO pin 24 of the first tunnel magnetoresistive sensor 20 is connected to the first SDI pin 23 of the second tunnel magnetoresistive sensor 20; the first SDO pin 24 of the second tunnel magnetoresistive sensor 20 is connected to the first SDI pin 23 of the third tunnel magnetoresistive sensor 20; the first SDO pin 24 of the third tunnel magnetoresistive sensor 20 is connected to the first SDI pin 23 of the fourth tunnel magnetoresistive sensor 20; and the first SDO pin 24 of the fourth tunnel magnetoresistive sensor 20 is connected to the SDI pin 13 of the main control chip 10. Therefore, these tunnel magnetoresistive sensors 20 convert the applied magnetic field strength into digital values, communicate with the main control chip 10 through their respective pins, and are connected in series in a daisy-chain configuration.

[0071] Please continue reading. Figure 3 and Figure 4 The input device 2 of the second embodiment of this utility model is structurally similar to the input device 1 of the first embodiment described above. The difference lies in that each tunnel magnetoresistive sensor 20 also has at least one LED driving pin 26 (three in this embodiment, but not limited to three, and can be increased or decreased according to actual needs). Each LED driving pin 26 is connected to and drives an LED 30, and each LED 30 is connected to the VDD pin 11 of the main control chip 10, so that the button is accompanied by lighting effect control when pressed. As for the connection method between the main control chip 10 and each tunnel magnetoresistive sensor 20, it is the same as that in the first embodiment described above, and will not be repeated here.

[0072] Please continue reading. Figure 5 and Figure 6 The input device 3 of the third embodiment of this utility model is structurally similar to the input device 1 of the first embodiment described above. The difference lies in that the main control chip 10 also has an SCK pin 15, and each tunnel magnetoresistive sensor 20 also has an SCK pin 25. The SCK pin 15 of the main control chip 10 is connected to the SCK pin 25 of each tunnel magnetoresistive sensor 20 to input a clock signal to each tunnel magnetoresistive sensor 20, thereby completing the transmission of synchronous data. The connection method between the main control chip 10 and each tunnel magnetoresistive sensor 20 is the same as that in the first embodiment described above, and will not be repeated here.

[0073] Please continue reading. Figure 7 and Figure 8The input device 4 of the fourth embodiment of this utility model is structurally similar to the input device 1 of the first embodiment described above. The difference lies in that the main control chip 10 has an SCK pin 15, and each tunnel magnetoresistive sensor 20 also has an SCK pin 25. The SCK pin 25 of the main control chip 10 is connected to the SCK pin 25 of each tunnel magnetoresistive sensor 20 to input a clock signal to each tunnel magnetoresistive sensor 20, thus completing the transmission of synchronous data. In addition, each tunnel magnetoresistive sensor 20 also has at least one LED driving pin 26 (three in this embodiment, but not limited to three, and can be increased or decreased according to actual needs). Each LED driving pin 26 is connected to and drives an LED 30. Each LED 30 is connected to the VDD pin 11 of the main control chip 10, so that the button is accompanied by lighting effect control when pressed. As for the connection method between the main control chip 10 and each tunnel magnetoresistive sensor 20, it is the same as that in the first embodiment described above, and will not be repeated here.

[0074] Please continue reading. Figure 9 and Figure 10 The input device 5 of the fifth embodiment of this utility model is structurally similar to the input device 1 of the first embodiment described above. The difference lies in that each tunnel magnetoresistive sensor 40 also has a second SDI pin 45 and a second SDO pin 46. The second SDI pin 45 is located on the same side as the first SDO pin 44 and is used to input a second signal. The second SDO pin 46 is located on the same side as the first SDI pin 43 and is used to input the aforementioned second signal. In other words, the first SDI pin 43 is the first cascaded data input, the first SDO pin 44 is the first cascaded data output, the second SDI pin 45 is the second cascaded data input, and the second SDO pin 46 is the second cascaded data output. Therefore, the tunnel magnetoresistive sensor 40 of this embodiment uses two cascaded lines for simultaneous data transmission.

[0075] Furthermore, when connected in a daisy-chain configuration to the main control chip 10, the VDD pin 41 of each tunnel magnetoresistive sensor 40 is connected to the VDD pin 11 of the main control chip 10, and the VSS pin 42 of each tunnel magnetoresistive sensor 40 is connected to the VSS pin 12 of the main control chip 10. Additionally, from... Figure 10From left to right, the SDO pin 14 of the main control chip 10 is connected to the first SDI pin 43 of the first tunnel magnetoresistive sensor 40; the first SDO pin 44 of the first tunnel magnetoresistive sensor 40 is connected to the first SDI pin 43 of the second tunnel magnetoresistive sensor 40; the first SDO pin 44 of the second tunnel magnetoresistive sensor 40 is connected to the first SDI pin 43 of the third tunnel magnetoresistive sensor 40; the first SDO pin 44 of the third tunnel magnetoresistive sensor 40 is connected to the first SDI pin 43 of the fourth tunnel magnetoresistive sensor 40; the second SDO pin 46 of the fourth tunnel magnetoresistive sensor 40 is connected to the second SDI pin 45 of the third tunnel magnetoresistive sensor 40; the second SDO pin 46 of the third tunnel magnetoresistive sensor 40 is connected to the second SDI pin 45 of the second tunnel magnetoresistive sensor 40; the second SDO pin 46 of the second tunnel magnetoresistive sensor 40 is connected to the second SDI pin 45 of the first tunnel magnetoresistive sensor 40; and the second SDO pin 46 of the first tunnel magnetoresistive sensor 40 is connected to the SDI pin 13 of the main control chip 10. Therefore, the tunnel magnetoresistive sensor 40 obtains data content for instruction processing through one of the series circuits, and outputs the internal data content through the other series circuit.

[0076] Please continue reading. Figure 11 and Figure 12 The input device 6 of the sixth embodiment of this utility model is structurally similar to the input device 5 of the fifth embodiment described above. The difference lies in that each tunnel magnetoresistive sensor 40 also has at least one LED driving pin 47 (three in this embodiment, but not limited to three, and can be increased or decreased according to actual needs). Each LED driving pin 47 is connected to and drives an LED 30, and each LED 30 is connected to the VDD pin 11 of the main control chip 10, so that the button is accompanied by lighting effect control when pressed. As for the connection method between the main control chip 10 and each tunnel magnetoresistive sensor 40, it is the same as that in the fifth embodiment described above, and will not be described again here.

[0077] Please continue reading. Figure 13 and Figure 14 The input device 7 of the seventh embodiment of this utility model is structurally similar to the input device 5 of the fifth embodiment described above. The difference lies in that the main control chip 10 also has an SCK pin 15, and each tunnel magnetoresistive sensor 40 also has an SCK pin 48. The SCK pin 15 of the main control chip 10 is connected to the SCK pin 48 of each tunnel magnetoresistive sensor 40 to input a clock signal to each tunnel magnetoresistive sensor 40, thereby completing the transmission of synchronous data. The connection method between the main control chip 10 and each tunnel magnetoresistive sensor 40 is the same as that in the fifth embodiment described above, and will not be repeated here.

[0078] Please continue reading. Figure 15 and Figure 16 The input device 8 of the eighth embodiment of this utility model is structurally similar to the input device 5 of the fifth embodiment described above. The difference lies in that the main control chip 10 also has an SCK pin 15, and each tunnel magnetoresistive sensor 40 also has an SCK pin 48. The SCK pin 15 of the main control chip 10 is connected to the SCK pin 48 of each tunnel magnetoresistive sensor 40 to input a clock signal to each tunnel magnetoresistive sensor 40, thus completing the transmission of synchronous data. In addition, each tunnel magnetoresistive sensor 40 also has at least one LED driving pin 47 (three in this embodiment, but not limited to three, and can be increased or decreased according to actual needs). Each LED driving pin 47 is connected to and drives an LED 30, and each LED 30 is connected to the VDD pin 11 of the main control chip 10, so that the button is accompanied by lighting effect control when pressed. As for the connection method between the main control chip 10 and each tunnel magnetoresistive sensor 40, it is the same as that in the fifth embodiment described above, and will not be repeated here.

[0079] In summary, the tunnel magnetoresistive sensors 20 and 40 used in the input devices 1-8 of this invention have lower power consumption, higher sensitivity, better linearity, better temperature stability, and a wider operating temperature range compared to the Hall sensors used in traditional input devices. Unlike Hall sensors, which can only detect vertical movement of buttons, the input devices 1-8 of this invention, through the tunnel magnetoresistive sensors 20 and 40, can simultaneously detect both downward and left / right movement of buttons, thus improving efficiency. Furthermore, the input devices 1-8 of this invention daisy-chain the main control chip 10 with these tunnel magnetoresistive sensors 20 and 40. Each tunnel magnetoresistive sensor 20 and 40 can store one or more key codes. Users can set the trigger threshold for the button travel; when the set threshold is reached, it outputs a custom key code or multiple key codes to the main control chip 10, thereby enabling simultaneous triggering of multiple buttons and improving the feedback rate of button response. Secondly, each tunnel magnetoresistive sensor 20, 40 can pre-store the calibration value of the absolute travel position of the button. When the user presses the button, it will output the value of the travel change. This can shorten the processing time of the main control chip 10, improve the resolution of the button travel change, and simultaneously and quickly scan the button and avoid mutual interference when different buttons are pressed at the same time.

Claims

1. A tunnel magnetoresistive sensor, characterized in that, For communication connection to a main control chip, the tunnel magnetoresistive sensor includes: A VDD pin is used to connect to the VDD pin of the main control chip. A VSS pin is used to connect to a VSS pin of the main control chip; A first SDI pin is used to input a signal; and A first SDO pin is used to output this signal; Therefore, the tunnel magnetoresistive sensor converts the magnetic field strength applied to it by a magnetic field source into a digital value, thereby representing the distance between the tunnel magnetoresistive sensor and the magnetic field source, and communicates with the main control chip through each of the pins and is used in series.

2. The tunnel magnetoresistive sensor according to claim 1, characterized in that, It also includes a second SDI pin and a second SDO pin, the second SDI pin being used to input a signal and the second SDO pin being used to output the signal.

3. The tunnel magnetoresistive sensor according to claim 1 or 2, characterized in that, It also includes an LED driver pin for connecting and driving an LED.

4. The tunnel magnetoresistive sensor according to claim 3, characterized in that, It also includes an SCK pin for connecting to the main control chip.

5. The tunnel magnetoresistive sensor according to claim 1 or 2, characterized in that, It also includes an SCK pin for connecting to the main control chip.

6. The tunnel magnetoresistive sensor according to claim 1, characterized in that, The tunnel magnetoresistive sensor is connected in series with the main control chip via a daisy chain.

7. An input device, characterized in that, Including: A main control chip has a VDD pin, a VSS pin, an SDI pin, and an SDO pin; and At least two tunnel magnetoresistive sensors according to claim 1 are daisy-chained to the main control chip, wherein the VDD pins of the tunnel magnetoresistive sensors are connected to the VDD pin of the main control chip, the VSS pins of the tunnel magnetoresistive sensors are connected to the VSS pin of the main control chip, wherein the first SDI pin and the first SDO pin of one tunnel magnetoresistive sensor are respectively connected to the SDO pin of the main control chip and the first SDI pin of another tunnel magnetoresistive sensor, and the first SDO pin of the other tunnel magnetoresistive sensor is connected to the SDI pin of the main control chip.

8. The input device according to claim 7, characterized in that, It also includes two LEDs, which are connected to the VDD pin of the main control chip; each tunnel magnetoresistive sensor also has an LED driving pin, which is connected to the LEDs respectively to drive the LEDs.

9. The input device according to claim 7 or 8, characterized in that, The main control chip also has an SCK pin, and each tunnel magnetoresistive sensor also has an SCK pin. The SCK pin of the main control chip is connected to the SCK pins of the tunnel magnetoresistive sensors to input a clock signal to the tunnel magnetoresistive sensors.

10. An input device, characterized in that, Including: A main control chip has a VDD pin, a VSS pin, an SDI pin, and an SDO pin; and At least two tunnel magnetoresistive sensors according to claim 2 are daisy-chained to the main control chip, wherein the VDD pins of the tunnel magnetoresistive sensors are connected to the VDD pin of the main control chip, the VSS pins of the tunnel magnetoresistive sensors are connected to the VSS pin of the main control chip, wherein the first SDI pin and the second SDO pin of one tunnel magnetoresistive sensor are respectively connected to the SDO pin and the SDI pin of the main control chip, and the first SDO pin and the second SDI pin of the tunnel magnetoresistive sensor connected to the main control chip are respectively connected to the first SDI pin and the second SDO pin of another tunnel magnetoresistive sensor.

11. The input device according to claim 10, characterized in that, It also includes two LEDs, which are connected to the VDD pin of the main control chip; each tunnel magnetoresistive sensor also has an LED driving pin, which is connected to the LEDs and used to drive the LEDs.

12. The input device according to claim 10 or 11, characterized in that, The main control chip also has an SCK pin, and each tunnel magnetoresistive sensor also has an SCK pin. The SCK pin of the main control chip is connected to the SCK pins of the tunnel magnetoresistive sensors to input a clock signal to the tunnel magnetoresistive sensors.

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