LED chip structure with high DBR adhesiveness and high brightness

Abstract

The utility model relates to the technical field of semiconductors, and specifically discloses a DBR high-adhesion and high-brightness LED chip structure comprising a core particle, a positive electrode and a negative electrode, the core particle comprises a substrate, an N-type GaN and MQW quantum well layer arranged on the surface of the substrate in sequence, and a DBR reflection layer arranged on the back surface of the substrate, the back surface of the substrate is provided with a plurality of uniform hole grooves, and the positive electrode and the negative electrode are arranged on the surface of the substrate. And the DBR reflecting layer is embedded into the substrate hole groove. According to the utility model, the back surface of the substrate of the film source is provided with the hole slot pattern to form the small hole, and after the film source is coated by the DBR, the reflecting layer of the DBR is embedded inside the substrate of the chip, so that the binding force between the DBR and the chip is increased, the area of the DBR is increased, and the adhesiveness of the DBR and the brightness of core particles are improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to a semiconductor technical field especially relates to a DBR high adhesion and high bright LED chip structure. BACKGROUND

[0002] LED chip is a kind of semiconductor solid-state lighting device, it can directly convert electric energy into light energy. With the development of science and technology, LED chip has been widely used in indoor and outdoor lighting, display device, mining and other industries. The performance stability and reliability of LED chip become key factors. DBR (Distributed Bragg Reflector) is a kind of multilayer film structure, it can reflect specific wavelength light, to improve the performance of LED chip.

[0003] In the prior art, after the LED chip is ground, the back surface becomes smooth, and the DBR film layer is formed on the smooth plane by ion plating. However, the disadvantage of this technology is that if the surface is dirty or the plating program is abnormal, DBR is easily detached and the DBR refraction area is not fully utilized. UTILITY MODEL CONTENT

[0004] The utility model in the prior art, research and development a kind of DBR high adhesion and high bright LED chip structure, substrate and DBR reflection layer combination part are optimized, the original substrate and DBR reflection layer smooth contact surface changes into uneven contact surface, to improve the adhesion of DBR and luminous efficiency.

[0005] To achieve the above object, the utility model adopts the following technical scheme:

[0006] A kind of DBR high adhesion and high bright LED chip structure, including core particle, anode and cathode, the core particle includes substrate, N type GaN, MQW quantum well layer, DBR reflection layer arranged on the surface of substrate successively, its characterized in that: the substrate back surface is opened with several uniform holes, and the DBR reflection layer is embedded in the substrate hole slot inside.

[0007] Preferably, the substrate is sapphire substrate.

[0008] Preferably, the hole slot and hole slot spacing 8 μm.

[0009] Preferably, the hole slot is a slope groove.

[0010] Preferably, the hole slot is inverted trapezoidal structure, hole slot aperture 4 μm, angle 45 ℃, depth is 2 μm.

[0011] Compared with prior art, the utility model has the following beneficial effects:

[0012] The utility model discloses a pattern is opened to the back of the slice source substrate, forms a small hole, and after the slice source is coated with DBR, the DBR reflection layer will be embedded into the chip substrate, thereby increasing the adhesion of DBR and the brightness of the chip. BRIEF DESCRIPTION OF DRAWINGS

[0013] Figure 1 It is the existing LED chip structure diagram.

[0014] Figure 2 It is the LED chip structure diagram of the utility model.

[0015] Figure 3 It is the substrate back structure diagram of the utility model.

[0016] Figure 4 It is the hole and groove structure diagram of the utility model. DETAILED DESCRIPTION

[0017] In order to further illustrate the technical means and effects taken by the utility model to achieve the predetermined utility model purposes, the specific implementation, structure, features and effects according to the utility model are described in detail as follows by combining with the drawings and preferred embodiments.

[0018] As shown in Figure 1 The existing LED chip structure includes a chip, a positive electrode and a negative electrode, the chip includes a substrate, an N-type GaN arranged on the surface of the substrate, an MQW quantum well layer, and a DBR reflection layer arranged on the back of the substrate. The back of the substrate is a smooth plane, and the DBR film layer is formed on the smooth plane by ion plating.

[0019] As shown in Figure 2 And Figure 3 The utility model discloses a DBR high adhesion and high brightness LED chip structure, including chip, positive pole and negative pole, the chip includes substrate, N type GaN that sets gradually in substrate surface, MQW quantum well layer, DBR reflection layer that sets in substrate back. The back of the substrate is opened with a plurality of uniform holes and grooves, and the DBR reflection layer is embedded in the substrate.

[0020] Small holes are opened on the contact surface of the substrate and the DBR, the hole-to-hole spacing is 8 microns, the hole diameter is 4 microns, the DBR is embedded in the substrate, the adhesion of the DBR can be increased, and the light-emitting area of the DBR can be increased.

[0021] As shown in Figure 4 The hole and groove are inverted trapezoidal structures, the hole diameter is 4 microns, the angle is 45 degrees, and the depth is 2 microns.

[0022] The above merely describes preferred embodiments of the present application, and is not intended to limit the present application in any form. Although the present application has been disclosed with preferred embodiments, it is not intended to limit the present application. Any person skilled in the art can make minor changes or modifications to the disclosed technical content, or make equivalent embodiments with equivalent changes, without departing from the technical solution of the present application. Any modification, equivalent change or modification of the above embodiments, which does not depart from the technical solution of the present application, is still within the scope of the technical solution of the present application.

Claims

1. A DBR high-adhesion and high-brightness LED chip structure, comprising a chip, a positive electrode, and a negative electrode, wherein the chip comprises a substrate, an N-type GaN layer sequentially disposed on the surface of the substrate, an MQW quantum well layer, and a DBR reflective layer disposed on the back side of the substrate, characterized in that: The substrate has several uniformly spaced holes on its back side, and the DBR reflective layer is embedded inside the holes in the substrate; the spacing between the holes is 8 μm. The groove has an inverted trapezoidal structure with a diameter of 4μm, an angle of 45°, and a depth of 2μm.

2. The DBR high adhesion and high brightness LED chip structure as described in claim 1, characterized in that: The substrate is a sapphire substrate.

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