Detector

Abstract

The utility model provides a detector, which relates to the technical field of infrared detection and can realize integration of a detection layer, a supporting layer and a lens layer through one-time vacuum packaging. The detector comprises a lens layer, a supporting layer, a first connecting structure, a detection layer and a second connecting structure, the supporting layer is located on one side, in the thickness direction of the lens layer, of the lens layer, and the supporting layer is provided with a light-transmitting area; the first connecting structure is located between the lens layer and the supporting layer and used for bonding the lens layer and the supporting layer; the first connecting structure surrounds the light-transmitting area; the detection layer is located on the side, away from the lens layer, of the supporting layer; the second connecting structure is located between the detection layer and the supporting layer and used for bonding the detection layer and the supporting layer; the second connecting structure surrounds the light-transmitting area.

Description

Technical Field

[0001] This application relates to the field of infrared detection technology, and in particular to a detector. Background Technology

[0002] Infrared thermal imaging uses photoelectric technology to detect infrared signals in a specific band that emit thermal radiation from an object, converts the signal into images and graphics that can be distinguished by human vision, and can obtain the target temperature value through a built-in temperature measurement algorithm.

[0003] In the prior art, a wafer-level optical lens disc with an array of lens units is bonded to a hollowed-out bracket to obtain a bonded body. The bonded body is then aligned and bonded to a substrate of an infrared detector integrated circuit with wafer-level packaging. After dicing, a single detector module is obtained. A getter is integrated into the side wall of the hollowed-out bracket to maintain a certain vacuum level within the package. The infrared detector integrated circuit at the bottom has already adopted wafer-level vacuum packaging.

[0004] This method involves two bonding processes: bonding the optical lens disc to the hollowed-out bracket and bonding the substrate to the hollowed-out bracket after bonding. Furthermore, the detector-level packaging and the core-level packaging involve two vacuum packaging processes and getter activation. In other words, the optical lens disc and the substrate cannot be directly bonded and packaged. This requires a high level of process complexity and many steps. Moreover, the cumulative yield of multiple packaging processes will result in a low actual output yield of the module. Utility Model Content

[0005] This invention provides a detector that integrates a detection layer, a support layer, and a lens layer through a single vacuum encapsulation.

[0006] This application provides a detector. The detector includes: a lens layer, a support layer, a first connecting structure, a detector layer, and a second connecting structure; the support layer is located on one side of the lens layer in its thickness direction, and the support layer has a light-transmitting area; the first connecting structure is located between the lens layer and the support layer for bonding the lens layer and the support layer; the first connecting structure surrounds the light-transmitting area; the detector layer is located on the side of the support layer away from the lens layer; the second connecting structure is located between the detector layer and the support layer for bonding the detector layer and the support layer; the second connecting structure surrounds the light-transmitting area.

[0007] Based on the above solutions, some embodiments of this application provide a detector that directly vacuum-bonds the detector layer, support layer, and lens layer through a single encapsulation. First, the detector layer, support layer, and lens layer are fabricated. Then, they are vacuum-bonded in one step using a first connection structure and a second connection structure. This eliminates the lens mount assembly and lens alignment steps required in traditional mechanisms, enabling wafer-level mass production of pre-packaged infrared detectors with lenses, resulting in low production costs and high efficiency. Furthermore, it significantly reduces the size and manufacturing cost of the mechanism.

[0008] In some embodiments, the lens layer, the support layer, the detector layer, the first connection structure, and the second connection structure form a cavity, and the detector further includes: a getter layer disposed within the cavity; the getter layer is disposed on at least one of the detector layer, the support layer, and the lens layer.

[0009] In some embodiments, the lens layer includes a lens, the projection of which onto the support layer overlaps with the light-transmitting area;

[0010] The projection of the getter layer onto the lens layer surrounds the lens or is located beside the lens.

[0011] In some embodiments, the support layer is provided with through holes that penetrate the support layer along its thickness direction, and the through holes form the light-transmitting area.

[0012] In some embodiments, the support layer includes a first surface facing the lens layer and a second surface facing the detector layer; the hole wall of the through hole is perpendicular to the first surface; or, along the thickness direction of the support layer and from the first surface to the second surface, the diameter of the through hole gradually increases or gradually decreases; or, along the thickness direction of the support layer and from the first surface to the second surface, the diameter of the through hole first gradually decreases and then gradually increases.

[0013] In some embodiments, the getter layer is disposed on the wall of the through hole.

[0014] In some embodiments, the support layer is provided with a first blind hole, the opening of which faces the lens layer or the detector layer; or...

[0015] The support layer is provided with a first blind hole and a second blind hole. The opening of the first blind hole faces the lens layer, and the opening of the second blind hole faces the detection layer. The first blind hole and the second blind hole overlap in the thickness direction of the support layer.

[0016] In some embodiments, the angle between the wall of the first blind hole and the bottom surface of the first blind hole is greater than or equal to 90°; and / or, the angle between the wall of the second blind hole and the bottom surface of the second blind hole is greater than or equal to 90°.

[0017] In some embodiments, the support layer divides the cavity into a first sub-cavity and a second sub-cavity; the getter layer includes a first getter layer and a second getter layer, wherein the first getter layer is disposed in the first sub-cavity and the second getter layer is disposed in the second sub-cavity.

[0018] In some embodiments, the lens layer includes a lens and an aperture stop; the projection of the lens onto the support layer overlaps with the light-transmitting area, and the aperture stop is disposed on the side of the lens away from the support layer.

[0019] In some embodiments, the lens layer further includes a first optical film and / or a second optical film; the first optical film is disposed on the side of the lens near the support layer; the first optical film is used to improve the transmittance of the light or to block electromagnetic waves within a set wavelength range; the second optical film is disposed on the side of the lens away from the support layer; the second optical film is used to improve the transmittance of the light or to block electromagnetic waves within a set wavelength range.

[0020] In some embodiments, the first connection structure includes: a first solder ring, a second solder ring, and a first solder; the first solder ring is disposed on the side of the lens layer near the support layer, the second solder ring is disposed on the side of the support layer near the lens layer, and the first solder is disposed between the first solder ring and the second solder ring for connecting the first solder ring and the second solder ring; the second connection structure includes: a third solder ring, a fourth solder ring, and a second solder; the third solder ring is disposed on the side of the support layer near the detector layer, the fourth solder ring is disposed on the side of the detector layer near the support layer, and the second solder is disposed between the third solder ring and the fourth solder ring for connecting the third solder ring and the fourth solder ring. Attached Figure Description

[0021] The accompanying drawings, which are included to provide a further understanding of embodiments of this disclosure and form part of the embodiments of this disclosure, illustrate exemplary embodiments of this disclosure and are used to explain this disclosure, but do not constitute an undue limitation of this disclosure. In the drawings:

[0022] Figure 1 A schematic diagram of a detector provided for some embodiments of this disclosure;

[0023] Figure 2 A schematic diagram illustrating the formation of a through-hole in a support layer, provided for some embodiments of this disclosure;

[0024] Figure 3 A schematic diagram illustrating another support layer forming a through-hole, provided for some embodiments of this disclosure;

[0025] Figure 4 A schematic diagram illustrating yet another form of through-hole formation in the support layer, provided for some embodiments of this disclosure;

[0026] Figure 5 A schematic diagram illustrating the formation of blind holes in a support layer, provided for some embodiments of this disclosure;

[0027] Figure 6 A schematic diagram of another support layer forming a blind hole provided for some embodiments of this disclosure;

[0028] Figure 7 A schematic diagram illustrating yet another form of blind hole formation in the support layer, provided for some embodiments of this disclosure;

[0029] Figure 8 This is a schematic diagram of a detector module provided for some embodiments of the present disclosure.

[0030] Figure Labels

[0031] 1. Lens layer; 11. Lens; 12. First optical film; 13. Second optical film; 14. Aperture; 1. Detector layer; 2. Support layer; 21. First sidewall; 22. Second sidewall; 23. Third sidewall; 24. Fourth sidewall; 25. Fifth sidewall; 3. Detector layer; 4. Photosensitive pixel; 5. First connecting structure; 51. First solder ring; 52. Second solder ring; 53. First solder; 6. Second connecting structure; 61. Third solder ring; 62. Fourth solder ring; 63. Second solder; 7. Getter layer; 100. Detector; 150. Circuit board; 200. Detector module; N. Cavity; D1. First bottom; D2. Second bottom; D3. Third bottom. Detailed Implementation

[0032] The technical solutions in some embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments provided in this application are within the scope of protection of this application.

[0033] Unless the context otherwise requires, throughout the specification and claims, the term "comprising" is interpreted as open-ended and encompassing, meaning "including, but not limited to." In the description, terms such as "one embodiment," "some embodiments," "exemplary embodiment," "example," or "some examples" are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of this application. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific feature, structure, material, or characteristic may be included in any suitable manner in any one or more embodiments or examples.

[0034] Infrared thermal imaging uses photoelectric technology to detect infrared signals in a specific band that emit thermal radiation from an object, converts the signal into images and graphics that can be distinguished by human vision, and can obtain the target temperature value through a built-in temperature measurement algorithm.

[0035] In the prior art, a wafer-level optical lens disc with an array of lens units is bonded to a hollowed-out bracket to obtain a bonded body. The bonded body is then aligned and bonded to a substrate of an infrared detector integrated circuit with wafer-level packaging. After dicing, a single detector module is obtained. A getter is integrated into the side wall of the hollowed-out bracket to maintain a certain vacuum level within the package. The infrared detector integrated circuit at the bottom has already adopted wafer-level vacuum packaging.

[0036] This method involves two bonding processes: bonding the optical lens disc to the hollowed-out bracket and bonding the substrate to the hollowed-out bracket after bonding. Furthermore, the detector-level packaging and the core-level packaging involve two vacuum packaging processes and getter activation. In other words, the optical lens disc and the substrate cannot be directly bonded and packaged. This requires a high level of process complexity and many steps. Moreover, the cumulative yield of multiple packaging processes will result in a low actual output yield of the module.

[0037] Meanwhile, the above packaging method adds a hollow bracket and optical lens to the outside of the infrared detector integrated circuit that has already undergone wafer-level packaging. The resulting module's horizontal area will be larger than the area of ​​the infrared detector integrated circuit, resulting in a larger module size and a decrease in the yield of a single wafer.

[0038] Based on this, some embodiments of this application provide a detector. For example... Figure 1 As shown, the detector 100 includes: a lens layer 1, a support layer 2, a first connection structure 5, a detection layer 3, and a second connection structure 6.

[0039] The support layer 2 is located on one side of the lens layer 1 in the direction of its own thickness, and the support layer 2 has a light-transmitting area.

[0040] The first connecting structure 5 is located between the lens layer 1 and the support layer 2, and is used to bond the lens layer 1 and the support layer 2; the first connecting structure 5 surrounds the light-transmitting area.

[0041] In some embodiments, the support layer 2 is provided with through holes that penetrate the support layer 2 along the thickness direction and form the light-transmitting area described above.

[0042] The detector layer 3 is located on the side of the support layer 2 away from the lens layer 1; the second connecting structure 6 is located between the detector layer 3 and the support layer 2 and is used to bond the detector layer 3 and the support layer 2; the second connecting structure 6 surrounds the light-transmitting area.

[0043] The detector layer 3, the support layer 2, and the lens layer 1 form a cavity N. A photosensitive pixel 4 is provided on the side of the cavity N near the detector layer 3. The photosensitive pixel 4 is located on the side of the detector layer 3 near the lens layer 1. The photosensitive pixel 4 is configured to receive light from the lens layer 1 and convert the light into an electrical signal.

[0044] In some embodiments, the cavity N described above is a vacuum cavity N. A vacuum environment can significantly reduce the thermal conductivity of the gas within the cavity, enabling uncooled infrared detector pixels to operate stably under low thermal conductivity conditions. Simultaneously, a vacuum environment can reduce the impact of temperature and humidity on optical components, maintaining the stability and accuracy of the optical system.

[0045] First, the lens layer 1 is located on the side of the support layer 2 away from the detector layer 3. It can focus and guide light, allowing it to more effectively illuminate the photosensitive pixel 4 of the detector layer 3. The photosensitive pixel 4 is located on the light-receiving surface of the detector layer 3 and can directly receive the light focused by the lens layer 1. This configuration ensures that the light can be efficiently converted into an electrical signal, improving the conversion efficiency and sensitivity of the detector 100.

[0046] Meanwhile, this design improves light utilization and enhances the sensitivity and response speed of the detector 100 to light. The cavity N structure formed by the detector layer 3, support layer 2, and lens layer 1 helps reduce stray light interference, improves the signal-to-noise ratio of the optical system, and thus improves image quality or the accuracy of optical detection.

[0047] Then, the support layer 2 is connected to the light-receiving surface of the detector layer 3 through the first connecting structure 5, and the lens layer 1 is connected to the support layer 2 through the second connecting structure 6. This structure provides good mechanical stability and reliability. Welded connections generally have high strength and durability, and can resist the impact and vibration of the external environment, ensuring the stability and reliability of the detector 100 during long-term operation.

[0048] By designing and connecting the detector layer 3, support layer 2, and lens layer 1 separately, a modular design for the detector 100 is achieved. This design facilitates the individual manufacturing and testing of each component, reducing production costs and maintenance complexity. Furthermore, the integration of the detector layer 3, support layer 2, and lens layer 1 can be achieved through a single vacuum encapsulation process, significantly reducing the size and manufacturing cost of the core module, making it an effective means of miniaturizing and reducing the cost of infrared core modules. Simultaneously, by directly vacuum bonding the detector layer 3, support layer 2, and lens layer 1, the traditional core module packaging steps of lens mount assembly and lens alignment are eliminated, allowing for wafer-level mass production of infrared detectors 100 with pre-packaged lenses, resulting in low production costs and high efficiency.

[0049] In summary, some embodiments of this application provide a detector 100 that directly vacuum-bonds the detector layer 3, support layer 2, and lens layer 1 through a single encapsulation process. First, the detector layer 3, support layer 2, and lens layer 1 are fabricated. Then, the detector layer 3, support layer 2, and lens layer 1 are vacuum-bonded in one step through a first connecting structure 5 and a second connecting structure 6. This eliminates the need for lens mount assembly and lens alignment steps in traditional mechanisms, enabling wafer-level mass production of pre-packaged infrared detectors 100 with lenses, resulting in low production costs and high efficiency. Furthermore, it significantly reduces the size and manufacturing cost of the mechanism.

[0050] like Figure 1 As shown, the lens layer 1, the support layer 2, the detector layer 3, the first connecting structure 5, and the second connecting structure form a cavity N. The detector 100 also includes a getter layer 7, which is disposed inside the cavity N. The getter layer 7 is disposed on at least one of the detector layer 3, the support layer 2, and the lens layer 1.

[0051] In other words, the getter layer 7 can be disposed only on the lens layer 1, only on the support layer 2, or only on the detector layer 3. The getter layer 7 can also be disposed on both the support layer 2 and the lens layer 1, both the lens layer 1 and the detector layer 3, both the detector layer 3 and the support layer 2, or both the detector layer 3, the support layer 2, and the lens layer 1.

[0052] In summary, the getter layer 7 offers more options for integration methods and locations, more flexible process selection, stronger process compatibility, and the ability to integrate a larger area of ​​getter, thereby improving the vacuum life of the device.

[0053] In some embodiments, getter layer 7 refers to a getter that, after being activated at high temperature, can continuously adsorb gas molecules, ensuring the vacuum level inside cavity N. Getter materials include, but are not limited to, titanium, titanium-zirconium alloy, titanium-zirconium-vanadium, zirconium-vanadium-iron, titanium-zirconium, and small amounts of lanthanide alloys, which are getters that can be activated at low temperatures. In this application, zirconium-vanadium-iron getter is used.

[0054] like Figure 1 As shown, in some embodiments, the lens layer 1 includes a lens 11 and at least one aperture stop 14; the aperture stop 14 is disposed on the light-receiving surface of the lens layer 1, and the lens 11 overlaps with the light-transmitting area; the aperture stop 14 is used to control the amount of light entering the lens 11.

[0055] The projection of the lens onto the support layer 2 overlaps with the light-transmitting area; the projection of the getter layer 7 onto the lens layer 1 surrounds the lens or is located beside the lens.

[0056] First, the aperture 14 can precisely control the amount of light entering the lens 11, thereby avoiding overexposure due to excessive light or underexposure due to insufficient light. This helps to ensure that the image has appropriate brightness and contrast, and improves the clarity of the image.

[0057] Meanwhile, by reasonably setting the size, number, and position of the aperture 14, aberrations generated by the lens 11, such as spherical aberration and chromatic aberration, can be effectively reduced, which helps to further improve the imaging quality and make the image more realistic and accurate.

[0058] For example, by adjusting the position of the aperture 14, light from unwanted directions can be blocked, preventing these rays from interfering with the imaging process.

[0059] In some embodiments, the material of the aperture 14 includes, but is not limited to, chromium, aluminum, etc.; in this application example, chromium is used.

[0060] In some embodiments, the lens 11 in this application may be made of silicon, germanium, zinc sulfide, or chalcogenide glass.

[0061] like Figure 1 As shown, a first optical film 12 is provided on the side of the lens 11 near the support layer 2.

[0062] The first optical film 12 covers part of the lens 11; the first optical film 12 is used to improve the transmittance of light or to reduce electromagnetic waves within a set wavelength range.

[0063] In some embodiments, the first optical film 12 is an antireflective film, which can significantly improve the light transmittance of the lens 11 by reducing light reflection loss and enhancing light transmission intensity.

[0064] like Figure 1 As shown, a second optical film 13 is provided on the side of the lens 11 away from the support layer 2. The second optical film 13 is provided on the side of the lens 11 away from the support layer 2. The second optical film 13 covers the lens 11. The second optical film 13 is used to improve the transmittance of the light or to reduce the transmittance of electromagnetic waves within a set wavelength range.

[0065] Electromagnetic waves are also a type of light. The second optical film 13 acts like a filter or light filter film, reducing electromagnetic waves within a first set range, such as ultraviolet light, visible light, and near-infrared light. This helps protect the lens 11 and the optical system from unnecessary electromagnetic interference, thereby ensuring the stability and accuracy of imaging.

[0066] In different application scenarios, it may be necessary to process light of different wavelengths. For example, this application requires electromagnetic waves with wavelengths of 8-14 μm. By selecting a suitable second optical film 13, the response of the lens 11 to light of different wavelengths can be flexibly adjusted, thereby retaining electromagnetic waves with wavelengths of 8-14 μm while filtering out electromagnetic waves of other wavelengths. This further enhances the adaptability and flexibility of the detector 100. In this case, the wavelength range refers to electromagnetic waves with wavelengths less than 8 μm and electromagnetic waves with wavelengths greater than 14 μm.

[0067] The specific operation process for forming the lens layer 1 is as follows: First, a first optical film 12 is formed on one side of the lens layer 1 by sputtering or evaporation to improve the long-wave infrared transmittance. Then, an aperture 14 is prepared on the same side by coating, photolithography, sputtering or evaporating a metal layer, and then by a lift-off process to replace the external aperture 14 structure, further reducing the size and cost of the detector 100.

[0068] Then, photoresist is coated on the lens layer 1 and patterned by photolithography and development. Thermal reflow is performed to condense the photoresist into a specific design surface. After baking and hardening, an etching process is performed to form an array of lenses 11 on the lens layer 1, which are used to focus external infrared radiation onto the detector layer 3.

[0069] In some embodiments, in addition to thermal reflow, photoresist with a specific design surface can also be obtained by nanoimprinting.

[0070] Then, the photoresist coating and photolithography are performed again, and the cutoff optical film is sputtered / evaporated. After a peeling process, a patterned second optical film 13 is formed on the surface of the lens 11 to cut off electromagnetic waves with wavelengths less than 8 μm and greater than 14 μm, ensuring better temperature measurement performance of the detector 100.

[0071] After applying adhesive, photolithography, sputtering, or evaporation, and then performing a peeling process, a getter layer 7 with a specific pattern is formed around the lens 11. This layer is used to maintain a low vacuum level within the package, ensuring that the detector 100 operates under low thermal conductivity conditions and that the detector 100 has its designed lifespan.

[0072] After applying adhesive, photolithography, sputtering or evaporation, and then performing a peeling process, a first connection structure 5 is formed around the lens 11 and the getter layer 7 for bonding and welding with the support layer 2.

[0073] The metal layer of the first connection structure 5 includes, but is not limited to: chromium / nickel / gold, chromium / gold, titanium / gold, titanium / platinum / gold; in this example, chromium / nickel / gold is used.

[0074] The relative positions of lens 11 and getter layer 7 can be adjusted according to the design, and getter layer 7 should be within the enclosure of cavity N.

[0075] like Figure 1 As shown, the first connection structure 5 includes: a first welding ring 51, a second welding ring 52, and a first solder 53.

[0076] The first solder ring 51 is disposed on the side of the lens layer 1 near the support layer 2, the second solder ring 52 is disposed on the side of the support layer 2 near the lens layer 1, and the first solder 53 is disposed between the first solder ring 51 and the second solder ring 52 for connecting the first solder ring 51 and the second solder ring 52.

[0077] The second connection structure 6 includes: a third welding ring 61, a fourth welding ring 62, and a second solder 63.

[0078] The third solder ring 61 is disposed on the side of the support layer 2 near the detector layer 3, the fourth solder ring 62 is disposed on the side of the detector layer 3 near the support layer 2, and the second solder 63 is disposed between the third solder ring 61 and the fourth solder ring 62 for connecting the third solder ring 61 and the fourth solder ring 62.

[0079] The first connecting structure 5 and the second connecting structure 6 achieve a robust connection between the lens layer 1, the support layer 2, and the detection layer 3 through a combination of welding rings and solder. This connection method enhances the stability of the overall structure, making it less prone to relative displacement or detachment between the layers, thereby improving the durability and reliability of the entire component.

[0080] Meanwhile, the solder, as a heat conduction medium, possesses excellent thermal conductivity. In the first connection structure 5 and the second connection structure 6, the first solder 53 fills the space between the first solder ring 51 and the second solder ring 52, and the second solder 63 fills the space between the third solder ring 61 and the fourth solder ring 62. This facilitates the effective transfer of heat between the lens layer 1, the support layer 2, and the detector layer 3. This is particularly important for the detector 100, which requires heat dissipation, and can improve the component's operating efficiency and lifespan.

[0081] like Figure 1 and Figure 2 As shown, in some embodiments, the support layer 2 is provided with through holes that penetrate the support layer along the thickness direction and form a light-transmitting area.

[0082] The support layer 2 includes a first surface facing the lens layer 1 and a second surface facing the detector layer 3.

[0083] The wall of the through hole is perpendicular to the first surface; or, along the thickness direction of the support layer and from the first surface to the second surface, the diameter of the through hole gradually increases or gradually decreases; or, along the thickness direction of the support layer and from the first surface to the second surface, the diameter of the through hole first gradually decreases and then gradually increases.

[0084] In this case, the wall of the through hole is perpendicular to the first surface. Figure 2 Along the thickness direction of the support layer and from the first surface to the second surface, the diameter of the through-hole gradually increases. Figure 3 As the diameter of the through hole gradually increases, it is related to... Figure 3 The direction is opposite; along the thickness direction of the support layer and from the first surface to the second surface, the diameter of the through hole first gradually decreases and then gradually increases. Figure 4 .

[0085] For example, refer to Figure 1 and Figure 2 The hole wall on the side of the through hole closest to cavity N is the first sidewall 21, and the plane containing the first sidewall 21 is perpendicular to the back surface of lens layer 1; or, refer to Figure 1 and Figure 3 The angle between the plane containing the first sidewall 21 and the lens layer 1 is greater than or less than 90 degrees.

[0086] The plane where the first sidewall 21 is located is perpendicular to the back surface of the lens layer 1, which is formed by dry etching. The angle between the plane where the first sidewall 21 is located and the back surface of the lens layer 1 is greater than or less than 90 degrees is formed by wet etching.

[0087] Reference Figure 1 and Figure 4 In some embodiments, the side of the through hole closest to the cavity N is a second sidewall 22 and a third sidewall 23.

[0088] The angle between the plane containing the second sidewall 22 and the back surface of the lens layer 1 is less than 90 degrees; the angle between the plane containing the third sidewall 23 and the back surface of the lens layer 1 is greater than 90 degrees. In other words, the through-hole sidewall is a sharp-angled bevel.

[0089] The plane containing the second sidewall 22 has an angle of less than 90 degrees with the back surface of the lens layer 1; the plane containing the third sidewall 23 has an angle of more than 90 degrees with the back surface of the lens layer 1, and is also formed by wet etching process.

[0090] like Figure 1 , Figure 5 , Figure 6 and Figure 7As shown, the support layer 2 is provided with a first blind hole, the opening of which faces the lens layer 1 or the detector layer 3; or, the support layer is provided with a first blind hole and a second blind hole, the opening of which faces the lens layer and the opening of which faces the detector layer, and the first blind hole and the second blind hole overlap in the thickness direction of the support layer.

[0091] The support layer 2 is provided with a first blind hole, the opening of which faces either the lens layer 1 or the detector layer 3. Figure 5 and Figure 6 The support layer is provided with a first blind hole and a second blind hole. The opening of the first blind hole faces the lens layer, and the opening of the second blind hole faces the detector layer. The first blind hole and the second blind hole overlap in the thickness direction of the support layer. Figure 7 .

[0092] The angle between the wall of the first blind hole and the bottom surface of the first blind hole is greater than or equal to 90°; and / or, the angle between the wall of the second blind hole and the bottom surface of the second blind hole is greater than or equal to 90°.

[0093] In other words, referencing Figure 5 The wall of the blind hole near cavity N is the fourth sidewall 24, and the bottom of the blind hole is the first bottom D1; the plane containing the fourth sidewall 24 is perpendicular to the plane containing the first bottom D1, that is, the angle between the bottom surfaces of the first blind hole and the plane containing the first bottom D1 is 90°; or, refer to Figure 6 The angle between the plane containing the fourth sidewall 24 and the plane containing the first bottom D1 is greater than 90°.

[0094] The plane where the fourth sidewall 24 is located is perpendicular to the plane where the first bottom D1 is located, which is formed by dry etching. The angle between the plane where the fourth sidewall 24 is located and the plane where the first bottom D1 is located is greater than 90 degrees, which is formed by wet etching.

[0095] Reference Figure 7 In some embodiments, the side of the blind hole closest to the cavity N is a fifth sidewall 25, and the bottom of the blind hole includes a second bottom D2 and a third bottom D3.

[0096] The second bottom layer D2 is close to the lens layer 1, and the third bottom layer D3 is close to the detector layer 3; the angle between the plane where the fifth sidewall 25 is located and the planes where the second bottom layer D2 and the third bottom layer D3 are located is equal to 90 degrees; or, the angle between the plane where the fifth sidewall 25 is located and the planes where the second bottom layer D2 and the third bottom layer D3 are located is greater than 90 degrees.

[0097] Among them, the second bottom D2 and the third bottom D3 refer to the formation of two blind holes, one above the other.

[0098] In some embodiments, the support layer 2 wafer can be made of silicon, quartz, or wafer-level alloy material; in this application example, silicon is used.

[0099] It should be noted that silicon allows light to pass through, so the blind hole structure does not affect the passage of light.

[0100] The support layer 2 can be an array of through-hole structures or an array of blind-hole structures. Its structural features are that it has a specific thickness and does not spatially interfere with the surface microstructure of the infrared detector 100 or the structure of the lens 11.

[0101] In particular, for the blind via support layer 2, anti-reflection optical films need to be sputtered on both sides to ensure transmittance. The etching depth of the blind via and the flatness of the bottom surface of the via are key parameters that will affect the transmittance of light.

[0102] The support layer 2 divides the cavity into a first sub-cavity and a second sub-cavity; the getter layer 7 includes a first getter layer and a second getter layer, with the first getter layer disposed in the first sub-cavity and the second getter layer disposed in the second sub-cavity.

[0103] In other words, the getter layer 7 can be disposed on the sidewall of the support layer 2. For blind hole structures, the getter layer 7 can be disposed not only on the sidewall, but also on the side of the support layer 2 near the detector layer 3.

[0104] The specific fabrication process is as follows: The non-coated area (solder ring) of the support layer 2 wafer is masked using a photoresist mask or a hard mask. A getter is deposited on the target area by sputtering or evaporation. The photoresist mask or hard mask is then removed to obtain the getter layer 7. The area containing the getter layer 7 will not interfere with the imaging optical path of the lens 11, i.e., it does not block light.

[0105] like Figure 8 As shown, some embodiments of this application also provide a detector module 200, which includes a detector 100 and a circuit board 150; the detector 100 is disposed on the circuit board 150.

[0106] In some embodiments, one detector 100 corresponds to one circuit board 150, and one detector 100 and one circuit board constitute a detector module 200.

[0107] After the detection layer 3 is prepared, photolithography, coating, and stripping can be performed in the non-functional area or reserved area to achieve the patterning of the getter.

[0108] After completing the preparation of lens layer 1, support layer 2, detector layer 3 and getter layer 7, the three layers are placed vertically in the order of lens layer 1, support layer 2 and detector layer 3. Under vacuum conditions, the three layers are vacuum sealed by bonding alignment, getter activation, gap removal and eutectic welding.

[0109] The bonded film layers are diced and sorted to obtain detectors 100 with single integrated lenses 11. The detectors 100 are patched and fixed on the adapter circuit board 150, and electrical connections are made by wire bonding. The interface is converted into a standard external interface and a detector module 200 is formed. After being connected to the tooling board, the output test can be realized.

[0110] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A detector, characterized in that, include: Lens layer; A support layer is located on one side of the lens layer in its thickness direction, and the support layer has a light-transmitting area; A first connecting structure is located between the lens layer and the support layer for bonding the lens layer and the support layer; The first connecting structure surrounds the light-transmitting area; The detection layer is located on the side of the support layer away from the lens layer; A second connection structure is located between the probe layer and the support layer, and is used to bond the probe layer and the support layer; The second connection structure surrounds the light-transmitting area.

2. The detector according to claim 1, characterized in that, The lens layer, the support layer, the detector layer, the first connecting structure, and the second connecting structure form a cavity; The detector further includes a getter layer disposed within the cavity, and the getter layer is disposed on at least one of the detection layer, the support layer, and the lens layer.

3. The detector according to claim 2, characterized in that, The lens layer includes a lens, and the projection of the lens onto the support layer overlaps with the light-transmitting area; The projection of the getter layer onto the lens layer surrounds the lens or is located beside the lens.

4. The detector according to claim 2, characterized in that, The support layer is provided with through holes, which penetrate the support layer along the thickness direction and form the light-transmitting area.

5. The detector according to claim 4, characterized in that, The support layer includes a first surface facing the lens layer and a second surface facing the detector layer; The wall of the through hole is perpendicular to the first surface; or, Along the thickness direction of the support layer and from the first surface to the second surface, the diameter of the through hole gradually increases or gradually decreases; or, Along the thickness direction of the support layer and from the first surface to the second surface, the diameter of the through hole first gradually decreases and then gradually increases.

6. The detector according to claim 4, characterized in that, The getter layer is disposed on the wall of the through hole.

7. The detector according to claim 2, characterized in that, The support layer is provided with a first blind hole, the opening of which faces either the lens layer or the detector layer; or... The support layer is provided with a first blind hole and a second blind hole. The opening of the first blind hole faces the lens layer, and the opening of the second blind hole faces the detection layer. The first blind hole and the second blind hole overlap in the thickness direction of the support layer.

8. The detector according to claim 7, characterized in that, The angle between the wall of the first blind hole and the bottom surface of the first blind hole is greater than or equal to 90°; and / or, The angle between the wall of the second blind hole and the bottom surface of the second blind hole is greater than or equal to 90°.

9. The detector according to claim 7, characterized in that, The support layer divides the cavity into a first sub-cavity and a second sub-cavity; The getter layer includes a first getter layer and a second getter layer, wherein the first getter layer is disposed in the first sub-cavity and the second getter layer is disposed in the second sub-cavity.

10. The detector according to claim 1, characterized in that, The lens layer includes: a lens and an aperture; The projection of the lens onto the support layer overlaps with the light-transmitting area, and the aperture is located on the side of the lens away from the support layer.

11. The detector according to claim 10, characterized in that, The lens layer further includes a first optical film and / or a second optical film; The first optical film is disposed on the side of the lens near the support layer; the first optical film is used to improve the transmittance of light or to block electromagnetic waves within a set wavelength range. The second optical film is disposed on the side of the lens away from the support layer; the second optical film is used to improve the transmittance of light or to block electromagnetic waves within a set wavelength range.

12. The detector according to any one of claims 1 to 11, characterized in that, The first connection structure includes: a first solder ring, a second solder ring, and a first solder. The first solder ring is disposed on the side of the lens layer near the support layer, the second solder ring is disposed on the side of the support layer near the lens layer, and the first solder is disposed between the first solder ring and the second solder ring for connecting the first solder ring and the second solder ring; The second connection structure includes: a third welding ring, a fourth welding ring, and a second solder; The third solder ring is disposed on the side of the support layer near the detection layer, the fourth solder ring is disposed on the side of the detection layer near the support layer, and the second solder is disposed between the third solder ring and the fourth solder ring for connecting the third solder ring and the fourth solder ring.

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