Waste gas treatment device of semiconductor silicon epitaxial wafer furnace

Abstract

The utility model discloses a waste gas treatment device of a semiconductor silicon epitaxial wafer furnace, which comprises a valve body and shunt pipes, the shunt pipes are symmetrically arranged at one end of the valve body, a collecting box is arranged outside the valve body and is connected with the shunt pipes, an exhaust pipe is arranged at the top end of the collecting box, and the exhaust pipe is connected with the valve body. An air cylinder is movably arranged at the top end of the valve body, a first push arm is installed at the output end of the air cylinder, a linkage arm is arranged at the end, away from the air cylinder, of the first push arm, a linkage shaft is arranged at the end, close to the first push arm, of the linkage arm, and the linkage arm is movably connected with the first push arm through the linkage shaft. A movable shaft is arranged at the end, away from the first push arm, of the linkage arm. According to the utility model, not only is the neutralization liquid sprayed in a reciprocating swinging manner conveniently and uniformly neutralize acid-base substances in waste gas, but also the filter screen can be conveniently and quickly replaced, and the equipment can be conveniently and quickly maintained without shutdown, and the waste gas treatment effect and efficiency are improved.

Description

Technical Field

[0001] This utility model relates to the technical field of waste gas treatment devices, specifically a waste gas treatment device for a semiconductor silicon epitaxial wafer furnace. Background Technology

[0002] Single-crystal silicon epitaxial wafers refer to materials in which one or more single-crystal silicon thin films are epitaxially grown on a single-crystal silicon substrate. They are mainly used to manufacture semiconductor discrete devices and integrated circuits. Epitaxial wafers consist of a substrate and an epitaxial layer grown on it. The epitaxial layer can be grown by methods such as chemical vapor deposition and has specific doping types, resistivity, thickness and lattice structure. Epitaxial wafers need to be generated by high-temperature treatment in an epitaxial furnace. After processing the epitaxial wafers, the epitaxial furnace will generate a large amount of waste gas. If the waste gas is directly discharged, it will cause environmental pollution. In order to reduce the pollution of the waste gas to the environment, relevant waste gas treatment equipment is needed to treat the waste gas before it is discharged. Therefore, a waste gas treatment device for a semiconductor silicon epitaxial wafer furnace is proposed.

[0003] As disclosed in the authorization announcement number CN214415891U, an epitaxial furnace exhaust gas treatment device for single crystal silicon epitaxial wafers includes a panel and a cooling chamber. Fixing screws pass through both the left and right sides of the panel. A water inlet passes through the upper end of the panel. An air inlet passes through the left side of the panel. An exhaust outlet passes through the right side of the panel. A sealing ring is movably connected to the outside of the exhaust outlet. A handle is arranged parallel to the left side of the exhaust outlet. A display screen is fixedly connected to the upper part of the panel. A control board is arranged parallel to the right side of the display screen. An indicator light is arranged parallel to the lower part of the display screen.

[0004] Although the through-structure improves the fixing effect of the equipment's fixing screws, enhances the overall structural stability of the equipment, improves the overall structural safety of the equipment during use, and improves the installation efficiency, the through-structure allows for better water intake, which improves the overall operational stability of the equipment. At the same time, the welded connection significantly improves the overall structural stability of the cooling chamber, which better guarantees the cooling effect and stability of the cooling chamber. The through-structure also improves the water output efficiency of the outlet, which better guarantees the overall structural stability of the equipment and makes the equipment's operation more stable.

[0005] However, the existing waste gas treatment devices do not solve the problems that make it difficult to conveniently and evenly neutralize the acid and alkaline substances in the waste gas by reciprocating and spraying the neutralizing liquid, nor do they facilitate the rapid replacement of the filter screen or the maintenance of the equipment without stopping the machine, thus affecting the effect and efficiency of waste gas treatment. Utility Model Content

[0006] The purpose of this utility model is to provide a waste gas treatment device for a semiconductor silicon epitaxial wafer furnace, so as to solve the problems mentioned in the background art, which are not convenient for reciprocating swing spraying of neutralizing liquid to uniformly neutralize acid and alkaline substances in waste gas, are not conducive to quick replacement of filter screens and non-stop maintenance of equipment, and affect the effect and efficiency of waste gas treatment.

[0007] To achieve the above objectives, this utility model provides the following technical solution: a waste gas treatment device for a semiconductor silicon epitaxial wafer furnace, comprising a valve body and a diversion pipe. A diversion pipe is symmetrically arranged at one end of the valve body. A collection box is arranged outside the valve body and connected to the diversion pipe. An exhaust pipe is installed at the top of the collection box. A cylinder is movably arranged at the top of the valve body. A first push arm is installed at the output end of the cylinder. A linkage arm is arranged at the end of the first push arm away from the cylinder. A linkage shaft is arranged at the end of the linkage arm close to the first push arm, and the linkage arm is movably connected to the first push arm through the linkage shaft. A movable shaft is arranged at the end of the linkage arm away from the first push arm, and the movable shaft extends into the interior of the valve body and is movably connected to the valve body. A valve plate is installed on the surface of the movable shaft, and the valve plate is slidably connected to the valve body.

[0008] Preferably, the inner wall of the exhaust pipe is symmetrically provided with limiting grooves, and the limiting grooves are fixedly connected to the exhaust pipe.

[0009] Preferably, the exhaust pipe is provided with a filter screen inside, and the filter screen is slidably connected to the limiting groove.

[0010] Preferably, each of the diverter tubes is provided with an electric push rod on its outer wall, and each of the electric push rods is equipped with a second push arm at its output end.

[0011] Preferably, a slip ring is movably mounted on the end of the second push arm away from the electric push rod, and the slip ring is slidably connected to the diverter pipe.

[0012] Preferably, the outer wall of the slip ring is provided with multiple sets of movable arms at equal intervals, and each movable arm is provided with a pin at the end near the slip ring, and the movable arm is movably connected to the slip ring through the pin.

[0013] Preferably, the end of the movable arm away from the slip ring is provided with an adjusting arm, and the end of the adjusting arm near the movable arm is provided with a hinge shaft, and the adjusting arm is movably connected to the movable arm through an exhaust pipe.

[0014] Preferably, the end of the adjusting arm away from the movable arm is provided with an atomizing nozzle, and the atomizing nozzle is movably connected to the diverter pipe, and a flexible hose is installed at one end of the atomizing nozzle.

[0015] Compared with the prior art, the beneficial effects of this utility model are: the waste gas treatment device not only realizes the convenient reciprocating swing spraying of neutralizing liquid to uniformly neutralize the acid and alkaline substances in the waste gas, which facilitates the quick replacement of the filter screen and the non-stop maintenance of the equipment, but also improves the effect and efficiency of waste gas treatment.

[0016] (1) The exhaust gas is discharged into the valve body through the pipe. At this time, the valve plate is in the state of blocking one group of diversion pipes. The exhaust gas is discharged into the other group of diversion pipes through the valve body. The neutralizing liquid is introduced into the flexible hose and sprayed out from the atomizing nozzle through the flexible hose. The neutralizing liquid is used to neutralize the acid and alkali substances in the exhaust gas. At the same time, the electric push rod can be opened, which drives the second push arm to move. The second push arm drives the slip ring to slide on the surface of the diversion pipe. The slip ring drives the movable arm to rotate through the pin shaft. The movable arm drives the adjusting arm to rotate through the hinge shaft. The adjusting arm drives the atomizing nozzle to rotate, thereby adjusting the spraying direction of the atomizing nozzle. Under the repeated action of the electric push rod, the atomizing nozzle is driven to oscillate and spray, thereby making the neutralizing liquid and the exhaust gas more evenly contacted. The neutralized gas enters the interior of the exhaust pipe and is discharged after being filtered again by the filter screen. The filter screen plays the role of filtering dust. The neutralized waste liquid flows into the collection box after use. When the filter screen needs to be replaced, the filter screen is pulled out from the limiting groove, and a new filter screen is inserted back into the limiting groove. This realizes convenient reciprocating oscillation spraying of neutralizing liquid to evenly neutralize acid and alkaline substances in exhaust gas, facilitates quick replacement of filter screen, and improves the effect of exhaust gas treatment.

[0017] (2) When a certain group of diverter pipes needs to be maintained, the cylinder drives the first push arm to move, the first push arm drives the linkage arm to rotate through the linkage shaft, and the linkage arm drives the movable shaft and valve plate to rotate, so that the valve plate rotates to block the air inlet of the diverter pipe to be maintained, and the waste gas is guided to another group of diverter pipes, so as to avoid the equipment shutdown affecting production efficiency, facilitate the maintenance of the equipment without stopping the machine, and improve the efficiency of waste gas treatment. Attached Figure Description

[0018] Figure 1 This is a three-dimensional structural diagram of the present invention;

[0019] Figure 2 This is a top view cross-sectional structural diagram of the present invention;

[0020] Figure 3 This is a three-dimensional structural diagram of the filter screen of this utility model;

[0021] Figure 4 This is a three-dimensional perspective view of the diversion tube of this utility model;

[0022] Figure 5This is a partial three-dimensional magnified structural diagram of the shunt tube of this utility model.

[0023] In the diagram: 1. Valve body; 2. Cylinder; 3. First push arm; 4. Linkage shaft; 5. Linkage arm; 6. Movable shaft; 7. Diverter pipe; 8. Collection box; 9. Exhaust pipe; 10. Valve plate; 11. Limiting groove; 12. Filter screen; 13. Electric push rod; 14. Second push arm; 15. Slip ring; 16. Atomizing nozzle; 17. Movable arm; 18. Pin; 19. Hinge shaft; 20. Adjusting arm; 21. Flexible hose. Detailed Implementation

[0024] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present utility model without creative effort are within the scope of protection of the present utility model.

[0025] Please see Figure 1-5 This utility model provides an embodiment of a waste gas treatment device for a semiconductor silicon epitaxial wafer furnace, comprising a valve body 1 and a diversion pipe 7. The diversion pipe 7 is symmetrically arranged at one end of the valve body 1. A collection box 8 is arranged outside the valve body 1 and is connected to the diversion pipe 7. An exhaust pipe 9 is installed at the top of the collection box 8. A cylinder 2 is movably arranged at the top of the valve body 1 and plays a power driving role. A first push arm 3 is installed at the output end of the cylinder 2. A linkage arm 5 is arranged at the end of the first push arm 3 away from the cylinder 2. A linkage shaft 4 is arranged at the end of the linkage arm 5 close to the first push arm 3 and the linkage arm 5 is movably connected to the first push arm 3 through the linkage shaft 4. A movable shaft 6 is arranged at the end of the linkage arm 5 away from the first push arm 3 and extends into the interior of the valve body 1 and is movably connected to the valve body 1. A valve plate 10 is installed on the surface of the movable shaft 6 and is slidably connected to the valve body 1.

[0026] Exhaust gas is discharged into the valve body 1 through a pipe. At this time, the valve plate 10 is in the state of blocking one branch pipe 7. The exhaust gas passes through the valve body 1 and is discharged into the other branch pipe 7. The neutralizing liquid is introduced into the flexible hose 21 and sprayed out from the atomizing nozzle 16 through the flexible hose 21. The neutralizing liquid neutralizes the acid and alkaline substances in the exhaust gas. At the same time, the electric push rod 13 can be opened, which drives the second push arm 14 to move. The second push arm 14 drives the slip ring 15 to slide on the surface of the branch pipe 7. The slip ring 15 drives the movable arm 17 to rotate through the pin 18. The movable arm 17 drives the adjusting arm 20 to rotate through the hinge shaft 19. The adjusting arm 20 drives the atomizing nozzle 16 to rotate, thereby adjusting the atomization spray. The spray direction of the pipe 16 is adjusted by the repeated action of the electric push rod 13, which drives the atomizing spray pipe 16 to swing back and forth, thereby making the neutralizing liquid and the exhaust gas more evenly contacted. The gas after neutralization enters the interior of the exhaust pipe 9 and is discharged after being filtered again by the filter screen 12. The filter screen 12 plays the role of filtering dust. The neutralized waste liquid after use flows into the collection box 8. When the filter screen 12 needs to be replaced, the filter screen 12 is pulled out from the limiting groove 11, and a new filter screen 12 is inserted back into the limiting groove 11. This realizes the convenient reciprocating swing spraying of neutralizing liquid to evenly neutralize the acid and alkaline substances in the exhaust gas, facilitates the quick replacement of the filter screen, and improves the effect of exhaust gas treatment.

[0027] The inner wall of the exhaust pipe 9 is symmetrically provided with limiting grooves 11, and the limiting grooves 11 are fixedly connected to the exhaust pipe 9;

[0028] The exhaust pipe 9 is equipped with a filter screen 12, and the filter screen 12 is slidably connected to the limiting groove 11. The outer wall of the diversion pipe 7 is equipped with an electric push rod 13, which plays the role of power drive. The output end of the electric push rod 13 is equipped with a second push arm 14.

[0029] The second push arm 14 is movably mounted with a slip ring 15 at the end away from the electric push rod 13, and the slip ring 15 is slidably connected to the diversion pipe 7. Multiple sets of movable arms 17 with equal spacing are provided on the outer wall of the slip ring 15. The movable arm 17 is provided with a pin 18 at the end near the slip ring 15, and the movable arm 17 is movably connected to the slip ring 15 through the pin 18.

[0030] An adjusting arm 20 is provided at the end of the movable arm 17 away from the slip ring 15. A hinge shaft 19 is provided at the end of the adjusting arm 20 close to the movable arm 17. The adjusting arm 20 is movably connected to the movable arm 17 through the exhaust pipe 9. An atomizing nozzle 16 is provided at the end of the adjusting arm 20 away from the movable arm 17. The atomizing nozzle 16 is movably connected to the diverter pipe 7. A flexible hose 21 is installed at one end of the atomizing nozzle 16.

[0031] When maintenance is required on a certain group of diverter pipes 7, cylinder 2 is opened, which drives the first push arm 3 to move. The first push arm 3 drives the linkage arm 5 to rotate via the linkage shaft 4. The linkage arm 5 drives the movable shaft 6 and the valve plate 10 to rotate, thereby rotating the valve plate 10 to block the air inlet of the diverter pipe 7 to be maintained, and guiding the exhaust gas to another group of diverter pipes 7. This avoids equipment downtime affecting production efficiency, facilitates non-stop maintenance of the equipment, and improves the efficiency of exhaust gas treatment.

[0032] Working principle: Waste gas is discharged into the valve body 1 through a pipe. At this time, the valve plate 10 is in the state of blocking one branch pipe 7. The waste gas passes through the valve body 1 and is discharged into the other branch pipe 7. The neutralizing liquid is introduced into the flexible hose 21 and sprayed out from the atomizing nozzle 16 through the flexible hose 21. The neutralizing liquid neutralizes the acid and alkali substances in the waste gas. The electric push rod 13 drives the second push arm 14 to move. The second push arm 14 drives the slip ring 15 to slide on the surface of the branch pipe 7. The slip ring 15 drives the movable arm 17 to rotate through the pin 18. The movable arm 17 drives the adjusting arm 20 to rotate through the hinge shaft 19. The adjusting arm 20 drives the atomizing nozzle 16 to rotate, thereby adjusting the spraying direction of the atomizing nozzle 16. Under the repeated action of the electric push rod 13, the electric push rod 13 drives the atomizing nozzle 16 to reciprocate and spray, thereby making the neutralizing liquid come into contact with the waste gas. The gas is more evenly distributed and after neutralization, it enters the exhaust pipe 9 and is discharged after being filtered again by the filter screen 12. The filter screen 12 plays the role of filtering dust. The neutralized waste liquid flows into the collection box 8 after use. When the filter screen 12 needs to be replaced, the filter screen 12 is pulled out from the limiting groove 11, and a new filter screen 12 is inserted back into the limiting groove 11. When a certain diversion pipe 7 needs to be maintained, the cylinder 2 is opened, and the cylinder 2 drives the first push arm 3 to move. The first push arm 3 drives the linkage arm 5 to rotate through the linkage shaft 4. The linkage arm 5 drives the movable shaft 6 and the valve plate 10 to rotate, so that the valve plate 10 rotates to block the air inlet of the diversion pipe 7 to be maintained, and guides the waste gas to another diversion pipe 7 to avoid equipment downtime affecting production efficiency. The above is the complete usage of the waste gas treatment device for semiconductor silicon epitaxial wafer furnace.

Claims

1. A waste gas treatment device for a semiconductor silicon epitaxial wafer furnace, comprising a valve body (1) and a diversion pipe (7), characterized in that: A diversion pipe (7) is symmetrically arranged at one end of the valve body (1). A collection box (8) is arranged outside the valve body (1) and is connected to the diversion pipe (7). An exhaust pipe (9) is installed at the top of the collection box (8). A cylinder (2) is movably arranged at the top of the valve body (1). A first push arm (3) is installed at the output end of the cylinder (2). A linkage arm (5) is arranged at the end of the first push arm (3) away from the cylinder (2). A linkage shaft (4) is arranged at the end of the linkage arm (5) close to the first push arm (3). The linkage arm (5) is movably connected to the first push arm (3) through the linkage shaft (4). A movable shaft (6) is arranged at the end of the linkage arm (5) away from the first push arm (3). The movable shaft (6) extends into the interior of the valve body (1) and is movably connected to the valve body (1). A valve plate (10) is installed on the surface of the movable shaft (6). The valve plate (10) is slidably connected to the valve body (1).

2. The waste gas treatment device for a semiconductor silicon epitaxial wafer furnace according to claim 1, characterized in that: The inner wall of the exhaust pipe (9) is symmetrically provided with limiting grooves (11), and the limiting grooves (11) are fixedly connected to the exhaust pipe (9).

3. The waste gas treatment device for a semiconductor silicon epitaxial wafer furnace according to claim 1, characterized in that: The exhaust pipe (9) is equipped with a filter screen (12), and the filter screen (12) is slidably connected to the limiting groove (11).

4. The waste gas treatment device for a semiconductor silicon epitaxial wafer furnace according to claim 1, characterized in that: Each of the diversion pipes (7) is provided with an electric push rod (13) on its outer wall, and each of the electric push rods (13) is provided with a second push arm (14) at its output end.

5. The waste gas treatment device for a semiconductor silicon epitaxial wafer furnace according to claim 4, characterized in that: The second push arm (14) is movably equipped with a slip ring (15) at the end away from the electric push rod (13), and the slip ring (15) is slidably connected to the diverter pipe (7).

6. The waste gas treatment device for a semiconductor silicon epitaxial wafer furnace according to claim 5, characterized in that: The outer wall of the slip ring (15) is provided with multiple sets of movable arms (17) at equal intervals. Each movable arm (17) is provided with a pin (18) at one end near the slip ring (15), and the movable arm (17) is movably connected to the slip ring (15) through the pin (18).

7. The waste gas treatment device for a semiconductor silicon epitaxial wafer furnace according to claim 6, characterized in that: Each of the movable arms (17) is provided with an adjusting arm (20) at the end away from the slip ring (15). Each of the adjusting arms (20) is provided with a hinge shaft (19) at the end near the movable arm (17). The adjusting arm (20) is movably connected to the movable arm (17) through the exhaust pipe (9).

8. The waste gas treatment device for a semiconductor silicon epitaxial wafer furnace according to claim 7, characterized in that: The adjusting arm (20) is provided with an atomizing nozzle (16) at the end away from the movable arm (17), and the atomizing nozzle (16) is movably connected to the diverter pipe (7), and a flexible hose (21) is installed at one end of the atomizing nozzle (16).

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