Current sensing device

Abstract

The utility model discloses a current sensing device, which is used for sensing the current in a conductor and comprises a first magnetic field generator, a second magnetic field generator, a current sensor and a current sensor, a first sensing module; the sensing direction of the first sensing module is along a first direction; a second sensing module; the current sensing device generates a current sensing signal according to the second sensing signal, and the first sensing signal is used for calibrating the current sensing signal; when at least part of the conductor is matched with the current sensing device, the first reference surface is located on one side of the first direction of the part, matched with the current sensing device, of the conductor, the first reference surface is parallel to the direction of the current generated by the part of the conductor, and the sensing surface of the first sensing module is parallel to the direction of the current generated by the part of the conductor. And the conductor is symmetrical relative to the axis in the conductor along the current direction or is symmetrical relative to the geometric center of the conductor. The current sensing device provided by the utility model is high in accuracy and high in sensitivity.

Description

Technical Field

[0001] This utility model relates to the field of test and measurement technology, and in particular to a current sensing device. Background Technology

[0002] Current sensing devices are used to sense current and have a wide range of applications. The process of sensing current can be based on the magnetic effect of current, which can be converted into sensing of magnetic fields. Thus, current sensing can be achieved using modules that are sensitive to magnetic fields.

[0003] When manufacturing and using a magnetic field sensing module, changes in stress and ambient temperature and humidity may cause linearity errors in the output curve of the magnetic field sensing module, which in turn may lead to errors in the sensing of current.

[0004] In the prior art, two sets of sensing units are provided to measure the magnetic field to be measured. The linear error is removed by mutual cancellation. However, the sensitivity of the magnetic field sensing device will be lost due to this cancellation, making the sensing device unsuitable for scenarios with high sensitivity requirements. Utility Model Content

[0005] One of the objectives of this invention is to provide a current sensing device to solve the technical problems of low sensitivity and poor current sensing accuracy in existing current sensing devices.

[0006] To achieve one of the above-mentioned objectives, one embodiment of this utility model provides a current sensing device for sensing current in a conductor. The current sensing device includes: a first magnetic field generator for applying a preset standard magnetic field to a first sensing module; a first sensing module disposed on a first reference surface for sensing the magnetic field to generate a first sensing signal; the sensing direction of the first sensing module is along a first direction; a second sensing module for sensing the signal magnetic field generated by the conductor when energized to generate a second sensing signal; the current sensing device generates a current sensing signal based on the second sensing signal, and the first sensing signal is used to calibrate the current sensing signal; when at least a portion of the conductor engages with the current sensing device, the first reference surface is located on one side of the portion of the conductor engaging with the current sensing device in a first direction, and the first reference surface is parallel to the direction of the current generated by the portion of the conductor engaging with the current sensing device when energized; the sensing surface of the first sensing module is symmetrical with respect to an axis along the current direction in the conductor, or symmetrical with respect to the geometric center of the conductor.

[0007] Compared with the prior art, the current sensing device provided by this utility model applies a preset standard magnetic field to the first sensing module by setting a first magnetic field generator. When there is a difference between the actual sensing result of the first sensing module corresponding to the standard magnetic field and the preset standard magnetic field information, the current sensing signal can be calibrated according to this difference, thereby eliminating linearity error and improving the accuracy of current sensing. Moreover, this process does not affect the sensing of the signal magnetic field by the second sensing module, so it does not affect the actual sensitivity of the current sensing device. Furthermore, based on the positional relationship between the conductor and the sensing surface of the first sensing module, the sensing direction of the first sensing module is the first direction. The signal magnetic field generated by the conductor has no effect on the output of the first sensing module. The first sensing signal can be directly used for calibration without the need to eliminate the signal magnetic field component through calculation, which improves the bandwidth of the current sensing device to a certain extent. Attached Figure Description

[0008] Figure 1 This is a schematic diagram of the current sensing device in one embodiment of the present invention.

[0009] Figure 2 yes Figure 1 The illustrated embodiment is a cross-sectional view formed with R1 as the section line.

[0010] Figure 3 This is a schematic diagram of the current sensing device in the first embodiment of this utility model.

[0011] Figure 4 This is a schematic diagram of the current sensing device in the second embodiment of the present invention.

[0012] Figure 5 This is a schematic diagram of the current sensing device in the third embodiment of this utility model.

[0013] Figure 6 This is a schematic diagram of the structure of the substrate and conductor in the fourth embodiment of this utility model.

[0014] Figure 7 This is a schematic diagram of the current sensing device in the fifth embodiment of this utility model.

[0015] Figure 8 This is a schematic diagram of the current sensing device in the sixth embodiment of this utility model.

[0016] Figure 9 This is a schematic diagram of the structure of the second sensing module in the first embodiment of this utility model.

[0017] Figure 10 This is a schematic diagram of the structure of the second sensing module in the second embodiment of this utility model.

[0018] Figure 11This is a schematic diagram of the structure of the second and third sensing modules in the third embodiment of this utility model.

[0019] Figure 12 This is a schematic diagram of the structure of the second and third sensing modules in the fourth embodiment of this utility model.

[0020] Figure 13 This is a schematic diagram of the structure of the first sensing module in the fifth embodiment of this utility model.

[0021] Figure 14 This is a schematic diagram of the structure of the first sensing module in the sixth embodiment of this utility model. Detailed Implementation

[0022] The present invention will now be described in detail with reference to the specific embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and any structural, methodological, or functional modifications made by those skilled in the art based on these embodiments are included within the protection scope of the present invention.

[0023] It should be noted that the term "comprising" or any other variation thereof is intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0024] Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. There is no necessary relationship between "first," "second," and "third," for example, the presence of "second" in an embodiment does not necessarily mean the presence of "first," and so on.

[0025] One embodiment of this utility model provides a current sensing device, such as... Figure 1 As shown.

[0026] The current sensing device is used to sense the current in conductor 700.

[0027] When conductor 700 is energized, it generates a signal magnetic field. The current sensing device can sense the current in conductor 700 by sensing the signal magnetic field.

[0028] The current in conductor 700 can be defined as the movement of charge between the power supply terminal and the ground terminal of conductor 700 when conductor 700 is energized, or the movement of charge between the positive and negative power supply terminals of conductor 700. The direction of the current and the direction of charge movement can be from the power supply terminal to the ground terminal, or from the positive power supply terminal to the negative power supply terminal. The direction of the current and the direction of charge movement can generally be considered to be consistent with the direction of extension of the conductor.

[0029] For example Figure 1 In the case where conductor 700 is energized, the current in the conductor segment extending along the third direction Y in conductor 700 can be considered to flow along the extension direction of conductor 700, that is, the direction of the current in the conductor segment is the third direction Y, that is, the direction of the current generated by at least part of conductor 700 is along the third direction Y.

[0030] Conductor 700 may also include conductor segments extending in other directions.

[0031] The current sensing device includes a first magnetic field generator 111.

[0032] The first magnetic field generator 111 is used to apply a preset standard magnetic field to the first sensing module 110.

[0033] The first magnetic field generator 111 may include a coil, a magnet, or other structures configured to generate a local magnetic field. Specifically, the first magnetic field generator 111 is configured as a coil, which, when in operation, is energized and generates a standard magnetic field.

[0034] The first magnetic field generator 111 can be placed close to the first sensing module 110.

[0035] The current sensing device includes a first sensing module 110.

[0036] The first sensing module 110 is used to sense the magnetic field to generate a first sensing signal. The magnetic field sensed by the first sensing module 110 can be the overall magnetic field of its environment.

[0037] The first sensing module 110 is disposed on the first reference surface S0. The first reference surface S0 can be a solid surface, formed by a solid structure such as a substrate. The first reference surface S0 can also be a virtual surface, used only to describe the relative placement position of the first sensing module 110.

[0038] The first sensing module 110 may include a Hall element or a magnetoresistive element. In one embodiment, the first sensing module 110 may be composed of a Hall element.

[0039] The sensing direction of the first sensing module 110 is along the first direction Z. The sensing direction of the first sensing module 110 can also be perpendicular to the first reference surface S0.

[0040] The sensing direction along the first direction Z indicates that the first sensing module 110 is sensitive to the magnetic field component in the first direction Z, or it can also indicate that the first sensing module 110 is sensitive to the magnetic field component in the opposite direction of the first direction Z. The sensing direction along the first direction Z can also indicate that the first sensing module 110 produces an electrical change in the magnetic field component in that direction; the electrical change includes a change in resistance, a change in current, a change in voltage, or a change in the amount of charge carried.

[0041] The standard magnetic field generated by the first magnetic field generator 111 has a magnetic field component at least in the sensing direction of the first sensing module 110; the standard magnetic field has a magnetic field component at least in the first direction Z or its opposite direction. In one embodiment, the direction of the standard magnetic field generated by the first magnetic field generator 111 is parallel to the sensing direction of the first sensing module 110; the direction of the standard magnetic field is along the first direction Z or its opposite direction.

[0042] The current sensing device includes a second sensing module 210.

[0043] When energized, conductor 700 generates a signal magnetic field. The second sensing module 210 is used to sense this signal magnetic field to generate a second sensing signal.

[0044] The second sensing module 210 can sense the signal magnetic field and generate a corresponding sensing signal based on its relative position to the conductor 700. The second sensing module 210 can also establish other electromagnetic coupling relationships with the conductor 700 to sense the signal magnetic field.

[0045] The current sensing device generates a current sensing signal based on the second sensing signal.

[0046] In one embodiment, the second sensing signal can be directly used as the current sensing signal. In another embodiment, the second sensing signal can be calibrated and then used as the current sensing signal. In yet another embodiment, the second sensing signal can be used together with other sensing signals or preset data to determine the current sensing signal; the determination method includes, but is not limited to, calculation, coupling to form a differential output, coupling to form a common-mode output, etc.

[0047] In one embodiment, the second current sensing module 210 in the current sensing device can be used to generate a current sensing signal based on the second sensing signal. In another embodiment, the current sensing device may further include a processor coupled to the second current sensing module 210, which can be used to generate the current sensing signal based on the second sensing signal.

[0048] The first sensing signal is used to calibrate the current sensing signal. Since the current sensing signal is generated based on the second sensing signal, the first sensing signal can also be used to calibrate the second sensing signal.

[0049] Since the first sensing module 110 senses at least a preset standard magnetic field, and the magnetic field strength and direction of the standard magnetic field are known, when the data sensed by the first sensing module 110 of the standard magnetic field is inconsistent with the set data of the standard magnetic field, it is determined that there is an error in the current sensing device, and the current sensing signal or the second sensing signal can be calibrated according to the difference between the two data.

[0050] When at least a portion of the conductor 700 is engaged with the current sensing device, the first reference surface S0 is located on one side of the portion of the conductor 700 engaged with the current sensing device in the first direction Z.

[0051] When at least a portion of conductor 700 is coupled with a current sensing device, it can be used when current is sensed in conductor 700 using the current sensing device. In this case, at least a portion of conductor 700 can be positioned close to the current sensing device so that at least a portion of the sensing module in the current sensing device senses the signal magnetic field.

[0052] When the current sensing device also includes a substrate 900, when at least a portion of the conductor 700 is close to the substrate 900, or when at least a portion of the conductor 700 is fixed in a relative position to the substrate 900, it can be considered that at least a portion of the conductor 700 cooperates with the current sensing device.

[0053] The first sensing module 110 is disposed on the first reference surface S0. When at least a portion of the conductor 700 is engaged with the current sensing device, the first sensing module 110 is located on the first direction Z side of the portion of the conductor 700 that is engaged with the current sensing device.

[0054] When at least a portion of the conductor 700 is engaged with the current sensing device, the first reference surface S0 is parallel to the direction of the current generated in the portion of the conductor 700 that is engaged with the current sensing device when energized.

[0055] The conductor 700 can be partially coupled to a current sensing device to generate a signal magnetic field when energized, which is then sensed by the current sensing device, while the other part is not coupled to the current sensing device. In this case, the first reference plane S0 is parallel to the direction of the current generated by the part of the conductor 700 that is coupled to the current sensing device when energized.

[0056] For example Figure 1 In the conductor 700, a conductor segment extending along a third direction Y cooperates with a current sensing device to generate a signal magnetic field, which is sensed by the second sensing module 210. The conductor 700 may contain other conductor segments, such as those extending along a first direction Z, and the first reference plane S0 is not parallel to other conductor segments.

[0057] In one embodiment, when at least a portion of the conductor 700 is engaged with a current sensing device, the sensing surface of the first sensing module 110 is symmetrical with respect to the axis AX1 of the conductor 700 along the direction of the current generated in the portion of the conductor 700 engaged with the current sensing device when energized.

[0058] Thus, when current is generated by energizing conductor 700, the signal magnetic field generated by the current is uniformly distributed on both sides of the axis and in opposite directions. The first sensing module 110 does not output any signal magnetic field. Without considering the influence of other environmental magnetic fields, the first sensing signal corresponds to the standard magnetic field. The difference between the data of the standard signal in the first sensing signal and the set data of the standard signal can be used to calibrate the current sensing signal.

[0059] In one embodiment, when at least a portion of the conductor 700 engages with the current sensing device, the sensing surface of the first sensing module 110 is symmetrical with respect to the geometric center GC1 of the portion of the conductor 700 engaging with the current sensing device.

[0060] Thus, when conductor 700 is energized and current is generated, the current direction passes through the geometric center GC1. Regardless of the current direction, the signal magnetic field generated by the current will be uniformly distributed on both sides of the axis extending along the current direction through the geometric center GC1 at the first sensing module 110, and the directions of the signal magnetic field components will be opposite. The first sensing module 110 does not generate an output for the signal magnetic field. Therefore, the current sensing signal can be calibrated using the first sensing signal.

[0061] like Figure 1 and Figure 2 As shown, in one embodiment, the current sensing device may further include a substrate 900.

[0062] The substrate 900 is disposed on the first reference surface S0. Based on this, when at least a portion of the conductor 700 engages with the current sensing device, the substrate 900 is located on the first direction Z side of the portion of the conductor 700 engaging with the current sensing device. When at least a portion of the conductor 700 engages with the current sensing device, the substrate 900 is parallel to the direction of the current generated in the portion of the conductor 700 engaging with the current sensing device when energized.

[0063] The substrate 900 includes a first region S1.

[0064] The first region S1 can refer to a portion of the first reference surface S0, or it can refer to a portion of the space at a certain height on the substrate 900. When the substrate 900 is parallel to the second direction X and the third direction Y, the first region S1, in addition to being distributed in the second direction X and the third direction Y, also has a certain height in the first direction Z. The first direction Z is simultaneously perpendicular to the second direction X and the third direction Y.

[0065] The first sensing module 110 is disposed in the first region S1 of the substrate 900.

[0066] The location of the first region S1 corresponds at least to the axis AX1 along the current direction in the conductor 700, or to the geometric center GC1 of the conductor 700. For example, the projection of the first region S1 onto the conductor 700 covers the axis AX1 or the geometric center GC1.

[0067] When at least a portion of the conductor 700 engages with the current sensing device, the portion of the conductor 700 engaging with the current sensing device is located on the opposite side of the first direction Z of the first region S1. The first sensing module 110 does not output the signal magnetic field component generated by the conductor segment located on the opposite side of the first direction Z of the first region S1.

[0068] The substrate 900 also includes a second region S2.

[0069] The second region S2 can refer to a part of the first reference surface S0, or it can refer to a part of the space with a certain height at the substrate 900.

[0070] The second region S2 is different from the first region S1.

[0071] Region S1 and region S2 can be two regions that do not completely overlap. Region S1 and region S2 can partially overlap. Region S1 and region S2 can also be two different regions that do not overlap at all.

[0072] The second sensing module 210 is disposed in the second region S2 of the substrate 900.

[0073] Based on the difference between the first region S1 and the second region S2, the second sensing module 210 located in the second region S2 can sense the signal magnetic field of the conductor 700 to generate a second sensing signal, which can then be used to generate a current sensing signal or to form a comparison with the first sensing signal.

[0074] Conductor 700 may further include a conductor segment disposed in the second region S2 on the third direction Y side. This conductor segment may extend along the second direction X. When conductor 700 is energized, this conductor segment generates a current along the second direction X.

[0075] In one embodiment, the first surface of the substrate 900 and the sensing surface of the first sensing module 110 overlap.

[0076] The first surface can be any surface of the substrate 900 used to support the sensing module. In this embodiment, the sensing surface of the first sensing module 110 overlaps with one of the surfaces of the substrate 900.

[0077] exist Figure 2If the first direction Z is defined as "down" and the opposite direction of the first direction Z is defined as "up", then the first surface can be the upper surface of the substrate 900, and the sensing surface of the first sensing module 110 can be located on the upper surface of the first sensing module 110.

[0078] The first surface of the substrate 900 overlaps with the first reference surface S0, and the sensing surface of the first sensing module 210 overlaps with the first reference surface S0.

[0079] The substrate 900 and the first sensing module 210 can be located on the same side of the first reference surface S0.

[0080] exist Figure 2 If the first direction Z is defined as "down", then the substrate 900 and the first sensing module 210 can both be located on the lower side of the first reference surface S0.

[0081] The aforementioned overlap does not necessarily mean that the areas are the same, but rather that their settings ranges are equal or have an inclusive or overlapping relationship, for example, in Figure 2 In the first reference surface S0, the first surface of the substrate 900 is covered, and the first surface covers the sensing surface of the first sensing module 110.

[0082] The first sensing module 110 can be disposed within the substrate 900. Specifically, the first sensing module 110 can be embedded within the substrate 900; the sensing surface of the first sensing module 110 can be exposed outside the substrate 900.

[0083] When at least a portion of the conductor 700 engages with the current sensing device, the first magnetic field generator 111 is located on the first reference surface S0 near the portion of the conductor 700 engaging with the current sensing device. Alternatively, the first magnetic field generator 111 may be disposed on the sensing surface of the first sensing module 110 away from the substrate 900.

[0084] exist Figure 2 If the first direction Z is defined as "down" and the opposite direction of the first direction Z is defined as "up", then the first magnetic field generator 111 can be located above the first reference surface S0, or above the first sensing module 110 and the substrate 900.

[0085] The first magnetic field generator 111 is disposed between the part of the conductor 700 that cooperates with the current sensing device and the first sensing module 110, which can further prevent the first sensing module 110 from outputting the signal magnetic field Bs, thereby improving the accuracy and efficiency of calibration.

[0086] Figure 3 The first embodiment of this utility model is shown. The differences between the first embodiment and the aforementioned technical solutions will be explained in detail below; similar parts will not be repeated. Different technical solutions in this utility model can be combined with the first embodiment.

[0087] The current sensing device also includes a third sensing module 220.

[0088] When energized, conductor 700 generates a signal magnetic field. The third sensing module 220 is used to sense this signal magnetic field to generate a third sensing signal.

[0089] The third sensing module 220 can sense the signal magnetic field and generate a corresponding sensing signal based on its relative position to the conductor 700. The third sensing module 220 can also establish other electromagnetic coupling relationships with the conductor 700 to sense the signal magnetic field.

[0090] The current sensing device generates a current sensing signal based on the second sensing signal and the third sensing signal.

[0091] The current sensing device can use the second sensing signal and the third sensing signal directly as the current sensing signal, or it can use the calibrated second sensing signal and the calibrated third sensing signal as the current sensing signal.

[0092] The current sensing device can determine the current sensing signal based on the second sensing signal and the third sensing signal, or it can determine the current sensing signal based on the second sensing signal, the third sensing signal and preset data. The determination method includes, but is not limited to, calculation, coupling to form differential output, coupling to form common-mode output, etc.

[0093] The first sensing signal is used to calibrate the current sensing signal, and based on this, the first sensing signal can also be used to calibrate the third sensing signal.

[0094] When at least a portion of the conductor 700 is engaged with the current sensing device, the second sensing module 210 is located on the opposite side of the second direction X of the portion of the conductor 700 engaged with the current sensing device. The second sensing module 210 can sense data of the magnetic field component of the conductor 700 on the opposite side of the second direction X, thereby generating a second sensing signal related to the current.

[0095] When the conductor 700 is positioned at the location of the first region S1 of the corresponding substrate 900 during current sensing, the second sensing module 210 can be located on the opposite side of the second direction X of the first region S1.

[0096] When at least a portion of the conductor 700 is engaged with the current sensing device, the third sensing module 220 is located on the second direction X side of the portion of the conductor 700 engaged with the current sensing device relative to the conductor 700. The third sensing module 220 can sense data of the magnetic field component of the conductor 700 on the second direction X side, thereby generating a third sensing signal related to the current.

[0097] When the conductor 700 is positioned at the first region S1 of the corresponding substrate 900 during current sensing, the third sensing module 220 can be located on the second direction X side of the first region S1.

[0098] The second direction X is at an angle to the direction of the current generated when conductor 700 is energized. The second direction X is perpendicular to the direction of the current generated when conductor 700 is energized.

[0099] The second sensing module 210 and the third sensing module 220 are located on both sides of the current direction of the conductor 700, and the generated sensing signals can be compared with each other.

[0100] The current sensing device also includes a substrate 900.

[0101] The substrate 900 is disposed on the first reference surface S0.

[0102] The substrate 900 includes a first region S1.

[0103] The second region S2 is located on the opposite side of the second direction X of the first region S1. The third region S3 is located on the second direction X side of the first region S1.

[0104] The second region S2 and the third region S3 are disposed on both sides of the first region S1 in a direction perpendicular to a preset direction, which is the direction of the current generated when the conductor 700 is energized.

[0105] The second region S2, the first region S1, and the third region S3 are set sequentially along the second direction X.

[0106] The first sensing module 110 is disposed in the first region S1 of the substrate 900. The second sensing module 210 is disposed in the second region S2 of the substrate 900. The third sensing module 220 is disposed in the third region S3 of the substrate 900.

[0107] The second sensing module 210 is disposed in the region opposite to the second direction X of the first sensing module 110. The third sensing module 220 is disposed in the region on the second direction X side of the first sensing module 110.

[0108] The second sensing module 210 and the third sensing module 220 can also be symmetrically arranged relative to the first sensing module 110. This helps to improve the correspondence between the second sensing signal and the third sensing signal, especially that the magnetic field strength information contained in the second sensing signal is similar to that contained in the third sensing signal, which is beneficial for determining the current sensing signal as needed.

[0109] Figure 4The second embodiment of this utility model is shown. The differences between the second embodiment and the foregoing technical solution will be explained in detail below; similar parts will not be repeated. Different technical solutions in this utility model can be combined with the second embodiment.

[0110] The current sensing device also includes a first processor 510. The first processor 510 is used to generate a calibration signal. Specifically, the first processor 510 can be used to generate a calibration signal based on a first sensing signal. The calibration signal is used to calibrate the current sensing signal.

[0111] In one embodiment, the input terminal of the first processor 510 is directly coupled to the first sensing module 110, and the output terminal of the first processor 510 is used to generate a calibration signal.

[0112] In one embodiment, the input terminal of the first processor 510 is indirectly coupled to the first sensing module 110, and the output terminal of the first processor 510 is used to generate a calibration signal. The indirect coupling may mean that the first processor 510 and the first sensing module 110 are also coupled to other modules or devices.

[0113] For example, the current sensing device also includes a first amplifier 410 for amplifying the signal and outputting it.

[0114] The input terminal of the first amplifier 410 is coupled to the output terminal of the first sensing module 110. The output terminal of the first amplifier 410 is used to output the amplified first sensing signal.

[0115] The first processor 510 is coupled to the first sensing module 110 via a first amplifier 410. The output of the first amplifier 410 is coupled to the input of the first processor 510.

[0116] The first processor 510 is used to calibrate the current sensing signal based on the difference between the value of the first sensing signal and a first preset value.

[0117] The first preset value is determined based on information about the standard magnetic field. The first preset value can be determined based on the magnetic field strength of the standard magnetic field. For example, the first preset value is equal to the magnetic field strength of the standard magnetic field.

[0118] When the sensed value of the magnetic field strength corresponding to the standard magnetic field in the first sensing signal is not equal to the first preset value, it indicates that the sensing situation of the current sensing device does not match the actual situation. At this time, the difference between the value of the first sensing signal and the first preset value can be used to calibrate the current sensing signal.

[0119] For example, when the sensed value is less than the first preset value, it indicates that the current sensing device is not sensing properly. In this case, the current sensing signal should be calibrated and increased.

[0120] For example, when the sensed value is greater than the first preset value, it indicates that the current sensing device is sensing too much, and the current sensing signal is calibrated and reduced.

[0121] The above-mentioned settings of being too large, too small, increased, and decreased are all based on the positive correlation between current value and magnetic field strength. When setting the correlation between current and other information, or setting the correlation between other information and magnetic field strength, the corresponding magnitude changes can be adaptively adjusted.

[0122] The first sensing module 110 and the second sensing module 210 can output sensing signals in the form of voltage.

[0123] The output terminal of the first processor 510 is coupled to the input terminal of the second sensing module 210. The first processor 510 is used to adjust the drive current. For example, the output terminal of the first processor 510 is coupled to the input terminal of the second sensing module 210 to adjust the drive current of the second sensing module 210.

[0124] The output of the first processor 510 can also be coupled to the input of the first sensing module 110. This allows it to be used to verify the calibration effect.

[0125] The first processor 510 can adjust the drive current according to the difference between the value of the first sensing signal and the first preset value. The output terminal of the first processor 510 can also be coupled to the input terminal of the first sensing module 110. When the value of the first sensing signal is less than the first preset value, the first processor 510 adjusts to increase the drive current; conversely, the first processor 510 adjusts to decrease the drive current.

[0126] The output of the first processor 510 is coupled to the input of the second sensing module 210. The first processor 510 can also be used to adjust the driving voltage. For example, the output of the first processor 510 is coupled to the input of the second sensing module 210 to adjust the driving voltage of the second sensing module 210.

[0127] The output of the first processor 510 can also be coupled to the input of the first sensing module 110.

[0128] The first processor 510 can adjust the driving voltage according to the difference between the value of the first sensing signal and the first preset value. The output terminal of the first processor 510 can also be coupled to the input terminal of the first sensing module 110. When the value of the first sensing signal is less than the first preset value, the first processor 510 adjusts to increase the driving voltage; conversely, the first processor 510 adjusts to decrease the driving voltage.

[0129] The current sensing device may also include a third sensing module 220.

[0130] The third sensing module 220 can be coupled to the second sensing module 210 to form an output node for generating a current sensing signal. The current sensing signal can be in the form of a differential voltage, specifically including a first sensing output Va and a second sensing output Vb.

[0131] The output of the first processor 510 can also be coupled to the input of the third sensing module 220. For example, the output of the first processor 510 can be coupled to the input of the third sensing module 220 to adjust the driving voltage or driving current of the third sensing module 220.

[0132] Figure 5 The third embodiment of this utility model is shown. The differences between the third embodiment and the foregoing technical solutions will be explained in detail below; similar parts will not be repeated. Different technical solutions in this utility model can be combined with the third embodiment.

[0133] Compared to the second embodiment, the current sensing device also includes a second amplifier 420 for amplifying the signal and outputting it.

[0134] The input terminal of the second amplifier 420 is coupled to the output terminal of the second sensing module 210. The output terminal of the second amplifier 420 is used to output the amplified second sensing signal. The second amplifier 420 is used to amplify the second sensing signal.

[0135] The output of the first processor 510 is coupled to the second amplifier 420 for adjusting the amplification factor. For example, the first processor 510 is used to adjust the amplification factor of the second amplifier 420.

[0136] The first processor 510 can adjust the amplification factor of the second amplifier 420 according to the difference between the value of the first sensing signal and the first preset value. When the value of the first sensing signal is less than the first preset value, the first processor 510 increases the amplification factor of the second amplifier 420; conversely, the first processor 510 decreases the amplification factor of the second amplifier 420.

[0137] The current sensing device may also include a first amplifier 410. The input of the first amplifier 410 is coupled to the output of the first sensing module 110. The output of the first amplifier 410 is coupled to the first processor 510.

[0138] The current sensing device may also include a third sensing module 220.

[0139] The current sensing device may also include a third amplifier 430. The input of the third amplifier 430 is coupled to the output of the third sensing module 220. The output of the third amplifier 430 is used to output the amplified third sensing signal. The third amplifier 430 is used to amplify the third sensing signal.

[0140] The output of the first processor 510 is coupled to the third amplifier 430 for adjusting the amplification factor. Specifically, the first processor 510 can be used to adjust the amplification factor of the third amplifier 430.

[0141] The first processor 510 can adjust the amplification factor of the third amplifier 430 according to the difference between the value of the first sensing signal and the first preset value. When the value of the first sensing signal is less than the first preset value, the first processor 510 increases the amplification factor of the third amplifier 430; conversely, the first processor 510 decreases the amplification factor of the third amplifier 430.

[0142] The current sensing device may further include a second processor 520. The second processor 520 is used to generate a current sensing signal. Specifically, the second processor 520 may be used to generate the current sensing signal based on a second sensing signal and / or a third sensing signal. The current sensing signal is in the form of a differential voltage, including a first sensing output Va and a second sensing output Vb.

[0143] In one embodiment, the input terminal of the second processor 520 is directly coupled to the second sensing module 210 and / or the third sensing module 220. The output terminal of the second processor 520 is used to generate a current sensing signal.

[0144] In one embodiment, the input terminal of the second processor 520 is indirectly coupled to the second sensing module 210 and / or the third sensing module 220. Indirect coupling can be achieved by connecting the second processor 520 to the second sensing module 210 via, for example, a second amplifier 420; with the output terminal of the second sensing module 210 coupled to the input terminal of the second processor 520. Alternatively, indirect coupling can be achieved by connecting the second processor 520 to the third sensing module 220 via, for example, a third amplifier 420; with the output terminal of the third sensing module 220 coupled to the input terminal of the second processor 520.

[0145] Figure 6 The fourth embodiment of this utility model is shown. The differences between the fourth embodiment and the foregoing technical solutions will be explained in detail below; similar parts will not be repeated. Different technical solutions in this utility model can be combined with the fourth embodiment.

[0146] Compared to the second embodiment, the current sensing device also includes a second processor 520.

[0147] The output of the first processor 510 is coupled to the second processor 520 and is used to adjust the operational gain. Specifically, the first processor 510 can be used to adjust the operational gain of the second sensing signal.

[0148] The first processor 510 can adjust the operational gain of the second sensing signal according to the difference between the value of the first sensing signal and the first preset value. When the value of the first sensing signal is less than the first preset value, the first processor 510 increases the operational gain of the second sensing signal; conversely, the first processor 510 decreases the operational gain of the second sensing signal.

[0149] In one embodiment, the input terminal of the second processor 520 is directly coupled to the second sensing module 210. For example, the input terminal of the second processor 520 is directly coupled to the output terminal of the second sensing module 210. The output terminal of the second processor 520 is used to generate a current sensing signal.

[0150] In one embodiment, the input terminal of the second processor 520 is indirectly coupled to the second sensing module 210. For example, the input terminal of the second processor 520 is indirectly coupled to the output terminal of the second sensing module 210. The output terminal of the second processor 520 is used to generate a current sensing signal.

[0151] The second processor 520 is specifically used to process the second sensing signal according to a preset operational gain, and then generate a current sensing signal accordingly.

[0152] The current sensing device may also include a first amplifier 410. The input of the first amplifier 410 is coupled to the output of the first sensing module 110. The output of the first amplifier 410 is coupled to the first processor 510.

[0153] The current sensing device may also include a second amplifier 420. The input of the second amplifier 420 is coupled to the output of the second sensing module 210. The output of the second amplifier 420 is coupled to the second processor 520.

[0154] The current sensing device may also include a third sensing module 220.

[0155] In one embodiment, the input of the second processor 520 is directly coupled to the third sensing module 220. The output of the second processor 520 is used to generate a current sensing signal.

[0156] In one embodiment, the input terminal of the second processor 520 is indirectly coupled to the third sensing module 220. The output terminal of the second processor 520 is used to generate a current sensing signal.

[0157] The second processor 520 is specifically used to process the third sensing signal according to a preset operational gain, and then generate a current sensing signal accordingly.

[0158] Specifically, the first processor 510 can be used to adjust the computational gain of the third sensing signal.

[0159] The current sensing device may also include a third amplifier 430. The input of the third amplifier 430 is coupled to the output of the third sensing module 220. The output of the third amplifier 430 is coupled to the second processor 520.

[0160] Figure 7 The fifth embodiment of this utility model is shown. The differences between the fifth embodiment and the foregoing technical solutions will be explained in detail below; similar parts will not be repeated. Different technical solutions in this utility model can be combined with the fifth embodiment.

[0161] Compared to Figure 1 and Figure 2 In the illustrated embodiment, the substrate 900 further includes a third region S3.

[0162] The third area S3 is used to set up sensing modules; one or more sensing modules can be set up in the third area S3.

[0163] The sensing module located in the third region S3 is used to sense the signal magnetic field generated by the conductor 700 when it is energized to generate a sensing signal.

[0164] The third region S3 can be located on the second direction X side of the first region S1.

[0165] Conductor 700 may further include a conductor segment disposed in the third region S3 on the side opposite to the third direction Y. This conductor segment may extend along the second direction X. When conductor 700 is energized, this conductor segment generates a current along the second direction X.

[0166] The conductor segment located on one side of the second region S2, the conductor segment located in the first region S1, and the conductor segment located on one side of the third region S3 are connected in sequence to form a Z-shaped conductor 700.

[0167] When at least a portion of the conductor 700 engages with the current sensing device, at least a portion of the portion of the conductor 700 engaging with the current sensing device is located on the opposite side of the first direction Z of the first region S1.

[0168] When at least a portion of the conductor 700 is engaged with the current sensing device, the second direction X is perpendicular to the direction of the current generated in the portion of the conductor 700 that is engaged with the current sensing device when energized.

[0169] The substrate 900 also includes a fourth region S4.

[0170] The fourth region S4 is used to set up sensing modules; one or more sensing modules can be set up in the fourth region S4.

[0171] The fourth region S4 is also used to set up a magnetic field generator corresponding to the sensing module set therein. The magnetic field generator is used to apply a preset standard magnetic field to the corresponding sensing module.

[0172] The sensing module located in the fourth region S4 is used to sense the magnetic field to generate a sensing signal. The sensing signal generated by the sensing module located in the fourth region S4 is related to the standard magnetic field applied by the corresponding magnetic field generator.

[0173] Different sensing modules located in the fourth region S4 can apply the same or different standard magnetic fields.

[0174] The fourth region S4 can be located on the second direction X side of the first region S1.

[0175] The fourth region S4 can be located on the second direction X side of the third region S3. The sensing module located in the third region S3 is used to sense the signal magnetic field generated by the conductor 700 when it is energized to generate a sensing signal.

[0176] When at least a portion of the conductor 700 is engaged with the current sensing device, the second direction X is perpendicular to the direction of the current generated in the portion of the conductor 700 that is engaged with the current sensing device when energized.

[0177] When at least a portion of the conductor 700 is engaged with the current sensing device, at least another portion of the portion of the conductor 700 engaged with the current sensing device is located on the opposite side of the first direction Z of the fourth region S4.

[0178] The sensing surface of the sensing module located in the fourth region S4 can also be symmetrical with respect to the axis of the current direction in the conductor segment of the conductor 700 corresponding to the fourth region S4, or it can be symmetrical with respect to the geometric center of the conductor segment of the conductor 700 corresponding to the fourth region S4.

[0179] The signal magnetic field generated by the conductor segment is uniformly distributed and opposite in direction at the sensing module located in the fourth region S4, so that the sensing module located in the fourth region S4 does not generate an output to it and corresponds to the standard magnetic field, thereby allowing the current sensing signal to be calibrated.

[0180] The substrate 900 also includes a fifth region S5.

[0181] The fifth area S5 is used to set up sensing modules; one or more sensing modules can be set up in the fifth area S5.

[0182] The sensing module located in the fifth region S5 is used to sense the signal magnetic field generated by the conductor 700 when it is energized to generate a sensing signal.

[0183] The fifth region S5 can be located on the second direction X side of the first region S1. The fifth region S5 can also be located on the second direction X side of the fourth region S4.

[0184] When at least a portion of the conductor 700 engages with the current sensing device, at least a portion of the portion of the conductor 700 engaging with the current sensing device is located on the opposite side of the first direction Z of the first region S1.

[0185] When at least a portion of the conductor 700 is engaged with the current sensing device, at least another portion of the portion of the conductor 700 engaged with the current sensing device is located on the opposite side of the first direction Z of the fourth region S4.

[0186] When the conductor 700 is engaged with the current sensing device, the second direction X is perpendicular to the direction of the current generated in the part of the conductor 700 that is engaged with the current sensing device when it is energized.

[0187] The first region S1 can be equipped with only the first sensing module 110, or it can be equipped with multiple sensing modules.

[0188] The first region S1 is also used to set up a magnetic field generator corresponding to the sensing module set therein. The magnetic field generator is used to apply a preset standard magnetic field to the corresponding sensing module.

[0189] The sensing module located in the first region S1 is used to sense the magnetic field to generate a sensing signal. The sensing signal generated by the sensing module located in the first region S1 is related to the standard magnetic field applied by the corresponding magnetic field generator.

[0190] Different sensing modules located in the first region S1 can apply the same or different standard magnetic fields.

[0191] The sensing surface of the sensing module located in the first region S1 can also be symmetrical with respect to the axis of the current direction in the conductor segment of the conductor 700 corresponding to the first region S1, or it can be symmetrical with respect to the geometric center of the conductor segment of the conductor 700 corresponding to the first region S1.

[0192] The signal magnetic field generated by the conductor segment is uniformly distributed and opposite in direction at the sensing module located in the first region S1, so that the sensing module located in the first region S1 does not generate an output to it and corresponds to the standard magnetic field, thereby allowing the current sensing signal to be calibrated.

[0193] Thus, a current sensing signal can be generated based on the sensing signals generated by the sensing modules located in the second region S2, the third region S3, and the fifth region S5. A calibration signal can be generated based on the sensing signals generated by the sensing modules located in the first region S1 and the fourth region S4. Specifically, the current sensing device can be calibrated based on the difference between the value of the first sensing signal and / or the value of the second sensing signal and a first preset value.

[0194] The second region S2, the first region S1, the third region S3, the fourth region S4, and the fifth region S5 are set sequentially along the second direction X.

[0195] In this embodiment, conductor 700 may include a first conductor segment located in the first region S1. When at least a portion of conductor 700 engages with a current sensing device, the first conductor segment is located on the opposite side of the first direction Z of the first region S1. The first conductor segment is used to engage with the current sensing device.

[0196] The projection of the first conductor segment onto the substrate 900 at least partially overlaps with the first region S1. The projection of the first conductor segment onto the substrate 900 may be the same as the first region S1.

[0197] In this embodiment, conductor 700 may include a second conductor segment located in the fourth region S4. When at least a portion of conductor 700 engages with a current sensing device, the second conductor segment is located on the opposite side of the first direction Z of the fourth region S4. The second conductor segment is used to engage with the current sensing device.

[0198] The projection of the second conductor segment onto the substrate 900 at least partially overlaps with the fourth region S4. The projection of the second conductor segment onto the substrate 900 may be the same as the fourth region S4.

[0199] In this embodiment, conductor 700 may further include a third conductor segment. The third conductor segment connects the first conductor segment and the second conductor segment.

[0200] The projection of the third conductor segment onto the substrate 900 may not overlap with the third region S3. The third region S3 is located between the first region S1 and the fourth region S4. Thus, the sensing module located in the third region S3 is more affected by the signal magnetic fields of the first and second conductor segments, which is beneficial for controlling variables.

[0201] The first conductor segment can extend in the third direction Y. When conductor 700 is energized, a current in the third direction Y can be generated within the first conductor segment.

[0202] The second conductor segment can extend in the third direction Y. When conductor 700 is energized, a current in the opposite direction Y can be generated within the second conductor segment.

[0203] The third conductor segment may extend along the second direction X. When the conductor 700 is powered on, a current along the second direction X may be generated within the third conductor segment.

[0204] The conductor 700 may further include a fourth conductor segment. The fourth conductor segment connects the first conductor segment and extends along the second direction X. The projection of the fourth conductor segment on the substrate 900 does not overlap with the second region S2. When the conductor 700 is powered on, a current along the second direction X may be generated within the fourth conductor segment.

[0205] The conductor 700 may further include a fifth conductor segment. The fifth conductor segment connects the fourth conductor segment and extends along the second direction X. The projection of the fifth conductor segment on the substrate 900 does not overlap with the fifth region S5. When the conductor 700 is powered on, a current along the second direction X may be generated within the fifth conductor segment.

[0206] The fourth conductor segment, the first conductor segment, the third conductor segment, the second conductor segment, and the fifth conductor segment are connected in sequence to form the configuration of the "ji" - shaped conductor 700.

[0207] Figure 8 The sixth embodiment of the present invention is shown. The differences between the sixth embodiment and the first embodiment will be elaborated below, and the similar parts will not be repeated. Different technical solutions in the present invention may be combined with the sixth embodiment.

[0208] The current sensing device further includes a fourth sensing module 230.

[0209] When the conductor 700 is powered on, a signal magnetic field is generated. The fourth sensing module 230 is configured to sense the signal magnetic field to generate a fourth sensing signal.

[0210] The fourth sensing module 230 can sense the signal magnetic field and generate a corresponding sensing signal based on its relative position relationship with the conductor 700. The fourth sensing module 230 may also establish other electromagnetic coupling relationships with the conductor 700 to sense the signal magnetic field.

[0211] The current sensing device generates a current sensing signal based on the second sensing signal, the third sensing signal, and the fourth sensing signal.

[0212] The first sensing signal is used to calibrate the current sensing signal. Based on this, the first sensing signal can also be used to calibrate the fourth sensing signal.

[0213] When at least a portion of the conductor 700 is engaged with the current sensing device, the fourth sensing module 230 is located on the opposite side of the second direction X of the portion of the conductor 700 engaged with the current sensing device. The fourth sensing module 230 can sense data of the magnetic field component of the conductor 700 on the opposite side of the second direction X, thereby generating a fourth sensing signal related to the current.

[0214] When the conductor 700 is defined such that it is at least partially disposed in the position of the first region S1 of the corresponding substrate 900 during current sensing, the fourth sensing module 230 may be located on the opposite side of the second direction X of the first region S1.

[0215] The current sensing device also includes a substrate 900.

[0216] The substrate 900 is disposed on the first reference surface S0.

[0217] The substrate 900 includes a first region S1.

[0218] The second region S2 is located on the opposite side of the second direction X of the first region S1.

[0219] The fourth sensing module 230 is disposed in the second region S2 of the substrate 900.

[0220] The fourth sensing module 230 is located in the region opposite to the second direction X of the first sensing module 110.

[0221] The current sensing device also includes a fifth sensing module 240.

[0222] When energized, conductor 700 generates a signal magnetic field. The fifth sensing module 240 is used to sense this signal magnetic field to generate a fifth sensing signal.

[0223] The fifth sensing module 240 can sense the signal magnetic field and generate a corresponding sensing signal based on its relative position to the conductor 700. The fifth sensing module 240 can also establish other electromagnetic coupling relationships with the conductor 700 to sense the signal magnetic field.

[0224] The current sensing device generates a current sensing signal based on the second sensing signal, the third sensing signal, and the fifth sensing signal.

[0225] The current sensing device generates a current sensing signal based on the second sensing signal, the third sensing signal, the fourth sensing signal, and the fifth sensing signal.

[0226] The first sensing signal is used to calibrate the current sensing signal, and based on this, the first sensing signal can also be used to calibrate the fifth sensing signal.

[0227] When at least a portion of the conductor 700 is engaged with the current sensing device, the fifth sensing module 240 is located on the second direction X side of the portion of the conductor 700 engaged with the current sensing device relative to the conductor 700. The fifth sensing module 240 can sense data of the magnetic field component of the conductor 700 on the second direction X side, thereby generating a fourth sensing signal related to the current.

[0228] When the conductor 700 is positioned at the first region S1 of the corresponding substrate 900 during current sensing, the fifth sensing module 240 can be located on the second direction X side of the first region S1.

[0229] The fourth sensing module 230 and the fifth sensing module 240 are located on both sides of the current direction of the conductor 700, and the generated sensing signals can be compared with each other.

[0230] The current sensing device also includes a substrate 900.

[0231] The substrate 900 is disposed on the first reference surface S0.

[0232] The substrate 900 includes a first region S1.

[0233] The third region S3 is located on the opposite side of the second direction X of the first region S1.

[0234] The fifth sensing module 240 is disposed in the third region S3 of the substrate 900.

[0235] The fifth sensing module 240 is located in the region on the second direction X side of the first sensing module 110.

[0236] The second region S2 and the third region S3 are disposed on both sides of the first region S1 in a direction perpendicular to a preset direction, which is the direction of the current generated when the conductor 700 is energized.

[0237] The second region S2, the first region S1, and the third region S3 are set sequentially along the second direction X.

[0238] The fourth sensing module 230 and the fifth sensing module 240 can also be arranged symmetrically with respect to the first sensing module 110.

[0239] The second sensing module 210 and the fourth sensing module 230, located in the second region S2, can be spaced apart along the direction of the current generated when the conductor 700 is energized. The second sensing module 210 and the fourth sensing module 230, located in the second region S2, can also be spaced apart along a third direction Y.

[0240] The third sensing module 220 and the fifth sensing module 240, located in the third region S3, can be spaced apart along the direction of the current generated when the conductor 700 is energized. The third sensing module 220 and the fifth sensing module 240, located in the third region S3, can also be spaced apart along a third direction Y.

[0241] Figure 9 A first embodiment of the present invention is illustrated. This embodiment describes a configuration of the second sensing module. This embodiment can be combined with any technical solution of the present invention that includes a second sensing module. Other modules having the same or similar functions as the second sensing module can also implement this configuration, such as a third sensing module, a fourth sensing module, and / or a fifth sensing module.

[0242] The second sensing module 210 includes a Hall element. The second sensing module 210 can be composed of Hall elements. The Hall element operates based on the Hall effect.

[0243] The second sensing module 210 may also include a magnetoresistive unit. The resistance value of the magnetoresistive unit changes in response to the magnetic field applied to it.

[0244] The second sensing module 210 includes a second Hall unit H2. The sensing direction of the second Hall unit H2 is perpendicular to the plane on which the second sensing module 210 is set. The sensing direction of the second Hall unit H2 is perpendicular to the first reference plane. The sensing direction of the second Hall unit H2 is the first direction Z or its opposite direction. The sensing direction of the second Hall unit H2 indicates that the second Hall unit H2 is sensitive to changes in the magnetic field in that direction.

[0245] The first terminal e21 of the second Hall element H2 is coupled to the power supply terminal Vd. The second terminal e22 of the second Hall element H2 is coupled to the ground terminal GND.

[0246] The second Hall unit H2 also includes a third terminal e23 and a fourth terminal e24. When the second Hall unit H2 is energized and a magnetic field along the first direction Z is applied, the charge is deflected based on the Lorentz force, generating a potential difference between the third terminal e23 and the fourth terminal e24.

[0247] The second Hall unit H2 can generate a voltage-form sensing signal based on the potential difference to reflect the second magnetic field component Bs2 of the signal magnetic field applied to the second Hall unit H2.

[0248] The second sensing module 210 can be located in the second region S2. The second magnetic field component Bs2 is the magnetic field component of the signal magnetic field generated by the conductor 700 when it is energized, located in the second region S2.

[0249] Similarly, the third sensing module 220, the fourth sensing module 230 and the fifth sensing module 240 in any of the technical solutions of this utility model may each include a Hall unit for sensing and generating sensing signals.

[0250] The location of the Hall unit can be the same as the location of the corresponding sensing module.

[0251] Figure 10 A second embodiment of the present invention is illustrated. This embodiment describes a configuration of the second sensing module. This embodiment can be combined with any technical solution in the present invention that includes a second sensing module. Other modules having the same or similar functions as the second sensing module can also implement this configuration, such as a third sensing module, a fourth sensing module, and / or a fifth sensing module.

[0252] In this second embodiment, the second sensing module 210 includes two or more Hall units.

[0253] The second sensing module 210 includes a second Hall unit H2. The sensing direction of the second Hall unit H2 is perpendicular to the plane on which the second sensing module 210 is set. The sensing direction of the second Hall unit H2 is perpendicular to the first reference plane. The sensing direction of the second Hall unit H2 is the first direction Z or its opposite direction.

[0254] The first terminal e21 of the second Hall element H2 is coupled to the power supply terminal Vd. The second terminal e22 of the second Hall element H2 is coupled to the ground terminal GND. The second Hall element H2 also includes a third terminal e23 and a fourth terminal e24.

[0255] The second sensing module 210 includes a fourth Hall element H4. The sensing direction of the fourth Hall element H4 is perpendicular to the plane on which the second sensing module 210 is set. The sensing direction of the fourth Hall element H4 is perpendicular to the first reference plane. The sensing direction of the fourth Hall element H4 is the first direction Z or its opposite direction. The sensing direction of the fourth Hall element H4 indicates that the fourth Hall element H4 is sensitive to changes in the magnetic field in that direction.

[0256] The first terminal e41 of the fourth Hall element H4 is coupled to the power supply terminal Vd. The second terminal e42 of the fourth Hall element H4 is coupled to the ground terminal GND.

[0257] The fourth Hall unit H4 also includes a third terminal e43 and a fourth terminal e44. When the fourth Hall unit H4 is energized and a magnetic field along the first direction Z is applied, the charge is deflected based on the Lorentz force, generating a potential difference between the third terminal e43 and the fourth terminal e44.

[0258] The fourth Hall unit H4 can generate a voltage-form sensing signal based on the potential difference to reflect the second magnetic field component Bs2 of the signal magnetic field applied to the fourth Hall unit H4.

[0259] The third terminal e43 of the fourth Hall unit H4 is coupled to the third terminal e23 of the second Hall unit H2. The fourth terminal e44 of the fourth Hall unit H4 is coupled to the fourth terminal e24 of the second Hall unit H2.

[0260] When the second Hall unit H2 and the fourth Hall unit H4 are subjected to magnetic field components in the same direction, the sensing signals of the two Hall units are added together to make the second sensing signal more accurate and usable.

[0261] The second Hall unit H2 and the fourth Hall unit H4 are positioned close to each other so that when at least a portion of the conductor 700 is engaged with the current sensing device, the direction of the magnetic field component of the signal magnetic field at the second Hall unit H2 is the same as the direction of the magnetic field component of the signal magnetic field at the fourth Hall unit H4.

[0262] Specifically, the second magnetic field component Bs2 of the signal magnetic field is applied to both the second Hall unit H2 and the fourth Hall unit H4.

[0263] Similarly, the third sensing module 220, the fourth sensing module 230 and the fifth sensing module 240 in any technical solution of this utility model may each include two or more Hall units for sensing and generating sensing signals.

[0264] The location of the Hall unit can be the same as the location of the corresponding sensing module.

[0265] Figure 11 A third embodiment of the present invention is illustrated. This embodiment describes a configuration of the second and third sensing modules. This embodiment can be combined with any technical solution of the present invention that includes a second and a third sensing module. Other modules having the same or similar functions as the second and third sensing modules, such as a fourth and / or a fifth sensing module, can also implement this configuration.

[0266] In this third embodiment, the second sensing module 210 and the third sensing module 220 may each include one or more Hall units.

[0267] The second sensing module 210 includes a second Hall unit H2. The sensing direction of the second Hall unit H2 is perpendicular to the plane on which the second sensing module 210 is set. The sensing direction of the second Hall unit H2 is perpendicular to the first reference plane. The sensing direction of the second Hall unit H2 is the first direction Z or its opposite direction.

[0268] The first terminal e21 of the second Hall element H2 is coupled to the power supply terminal Vd. The second terminal e22 of the second Hall element H2 is coupled to the ground terminal GND. The second Hall element H2 also includes a third terminal e23 and a fourth terminal e24.

[0269] The current sensing device also includes a third sensing module 220.

[0270] When energized, conductor 700 generates a signal magnetic field. A third sensing module 220 senses this signal magnetic field to generate a third sensing signal. The current sensing device generates a current sensing signal based on the second and third sensing signals.

[0271] The third sensing module 220 can also be as follows: Figures 3 to 6 , Figure 8 The illustrated embodiment is configured as follows.

[0272] The third sensing module 220 includes a third Hall unit H3. The sensing direction of the third Hall unit H3 is perpendicular to the plane on which the second sensing module 210 is set. The sensing direction of the third Hall unit H3 is perpendicular to the first reference plane. The sensing direction of the third Hall unit H3 is the first direction Z or its opposite direction. The sensing direction of the third Hall unit H3 can indicate that the fourth Hall unit H4 is sensitive to changes in the magnetic field in that direction.

[0273] The first terminal e31 of the third Hall element H3 is coupled to the power supply terminal Vd. The second terminal e32 of the third Hall element H3 is coupled to the ground terminal GND.

[0274] The third Hall unit H3 also includes a third terminal e33 and a fourth terminal e34. When the third Hall unit H3 is energized and a magnetic field is applied in the opposite direction to the first direction Z, the charge is deflected based on the Lorentz force, generating a potential difference between the third terminal e33 and the fourth terminal e34.

[0275] The third Hall unit H3 can generate a voltage-form sensing signal based on the potential difference to reflect the third magnetic field component Bs3 of the signal magnetic field applied to the third Hall unit H3.

[0276] The third sensing module 220 can be located in the third region S3. The third magnetic field component Bs3 is the magnetic field component of the signal magnetic field generated by the conductor 700 when it is energized at the third region S3.

[0277] The third terminal e43 of the third Hall unit H3 is coupled to the fourth terminal e24 of the second Hall unit H2. The fourth terminal e44 of the third Hall unit H3 is coupled to the third terminal e23 of the second Hall unit H2.

[0278] When the second Hall unit H2 and the third Hall unit H3 are applied with magnetic field components in opposite directions, the sensing signals of the two Hall units are added together to make the second sensing signal more accurate and usable.

[0279] The direction of the magnetic field component of the signal magnetic field at the second Hall unit H2 is opposite to the direction of the magnetic field component of the signal magnetic field at the third Hall unit H3.

[0280] The signal magnetic field has a second magnetic field component Bs2 at the second Hall unit H2, and a third magnetic field component Bs3 at the third Hall unit H3. The second magnetic field component Bs2 and the third magnetic field component Bs3 are in opposite directions. The second magnetic field component Bs2 is along the first direction Z. The third magnetic field component Bs3 is along the opposite direction of the first direction Z.

[0281] When at least a portion of conductor 700 is engaged with the current sensing device, the distance between the second Hall unit H2 and the portion of conductor 700 engaged with the current sensing device can be equal to the distance between the third Hall unit H3 and the portion of conductor 700 engaged with the current sensing device. The magnetic field strengths of the second magnetic field component Bs2 and the third magnetic field component Bs3 are equal.

[0282] Similarly, the fourth sensing module 230 and the fifth sensing module 240 in any technical solution of this utility model can be configured like the second sensing module 210 and the third sensing module 220.

[0283] Figure 12 A fourth embodiment of the present invention is illustrated. This embodiment describes a configuration of the second and third sensing modules. This embodiment can be combined with any technical solution of the present invention that includes a second and third sensing module. Other modules having the same or similar functions as the second and third sensing modules, such as a fourth and / or fifth sensing module, can also implement this configuration.

[0284] In this fourth embodiment, the second sensing module 210 and the third sensing module 220 may each include one or more Hall units.

[0285] The second sensing module 210 includes a second Hall unit H2. The sensing direction of the second Hall unit H2 is perpendicular to the plane on which the second sensing module 210 is set. The sensing direction of the second Hall unit H2 is perpendicular to the first reference plane. The sensing direction of the second Hall unit H2 is the first direction Z or its opposite direction.

[0286] The first terminal e21 of the second Hall element H2 is coupled to the power supply terminal Vd. The second terminal e22 of the second Hall element H2 is coupled to the ground terminal GND. The second Hall element H2 also includes a third terminal e23 and a fourth terminal e24.

[0287] The current sensing device also includes a third sensing module 220.

[0288] When energized, conductor 700 generates a signal magnetic field. A third sensing module 220 senses this signal magnetic field to generate a third sensing signal. The current sensing device generates a current sensing signal based on the second and third sensing signals.

[0289] The third sensing module 220 includes a third Hall unit H3. The sensing direction of the third Hall unit H3 is perpendicular to the mounting plane of the third sensing module 220. The sensing direction of the third Hall unit H3 is perpendicular to the first reference plane. The sensing direction of the third Hall unit H3 is the first direction Z or its opposite direction.

[0290] The first terminal e31 of the third Hall element H3 is coupled to the power supply terminal Vd. The second terminal e32 of the third Hall element H3 is coupled to the ground terminal GND. The third Hall element H3 also includes a third terminal e33 and a fourth terminal e34.

[0291] The current sensing device also includes a second amplifier 420. A first input terminal of the second amplifier 420 is coupled to the third terminal e23 of the second Hall element H2. A second input terminal of the second amplifier 420 is coupled to the fourth terminal e24 of the second Hall element. The output terminal of the second amplifier 420 is used to generate a current sensing signal; specifically, it includes a second sensing signal.

[0292] The second amplifier 420 performs a differential operation on the signals at its first and second input terminals and then outputs the signal. This makes the sensing signal of the second Hall unit H2 more reliable.

[0293] The current sensing device also includes a third amplifier 430. The output of the third amplifier 430 is used to generate a current sensing signal; specifically, a third sensing signal.

[0294] The third terminal e33 of the third Hall unit H3 is coupled to the first input terminal of the third amplifier 430. The fourth terminal e34 of the third Hall unit H3 is coupled to the second input terminal of the third amplifier 430.

[0295] The third amplifier 430 performs a differential operation on the signals at its first and second input terminals before outputting the signal. This makes the sensing signal of the third Hall unit H3 more reliable.

[0296] The direction of the magnetic field component of the signal magnetic field at the second Hall unit H2 is opposite to the direction of the magnetic field component of the signal magnetic field at the third Hall unit H3.

[0297] The signal magnetic field has a second magnetic field component Bs2 at the second Hall unit H2, and a third magnetic field component Bs3 at the third Hall unit H3. The second magnetic field component Bs2 and the third magnetic field component Bs3 are in opposite directions. The second magnetic field component Bs2 is along the first direction Z. The third magnetic field component Bs3 is along the opposite direction of the first direction Z.

[0298] When at least a portion of the conductor 700 is engaged with the current sensing device, the second Hall element H2 is located on the opposite side of the second direction X of the portion of the conductor 700 engaged with the current sensing device. When the conductor 700 is engaged with the current sensing device, the third Hall element H3 is located on the second direction X side of the portion of the conductor 700 engaged with the current sensing device.

[0299] The second direction X is perpendicular to the direction of the current generated when conductor 700 is energized.

[0300] The direction of the magnetic field component of the signal magnetic field generated by conductor 700 at the second Hall unit H2 is opposite to the direction of the magnetic field component of the signal magnetic field at the third Hall unit H3.

[0301] In this way, magnetic field sensing signals from both sides of conductor 700 can be obtained, enabling composite calculation of sensing signals from different regions.

[0302] When at least a portion of conductor 700 is engaged with the current sensing device, the distance between the second Hall unit H2 and the portion of conductor 700 engaged with the current sensing device can be equal to the distance between the third Hall unit H3 and the portion of conductor 700 engaged with the current sensing device. The magnetic field strengths of the second magnetic field component Bs2 and the third magnetic field component Bs3 are equal.

[0303] The sensing signal of the second Hall unit H2 can be superimposed with the sensing signal of the third Hall unit H3. When the second Hall unit H2 is located in the second region S2 and the third Hall unit H3 is located in the third region S3, the superimposed output represents the common-mode signal of the magnetic field components in the second region S2 and the third region S3.

[0304] The sensing signal of the second Hall unit H2 can be subtracted from the sensing signal of the third Hall unit H3. When the second Hall unit H2 is located in the second region S2 and the third Hall unit H3 is located in the third region S3, the output generated by the subtraction represents the differential signal of the magnetic field components in the second region S2 and the third region S3.

[0305] Similarly, the fourth sensing module 230 and the fifth sensing module 240 in any technical solution of this utility model can be configured like the second sensing module 210 and the third sensing module 220.

[0306] The current sensing device also includes a second processor 520. The second processor 520 is used to generate a current sensing signal. Specifically, the second processor 520 can be used to generate a current sensing signal based on a second sensing signal and / or a third sensing signal.

[0307] In one embodiment, the input terminal of the second processor 520 is directly coupled to the second sensing module 210 and / or the third sensing module 220. The output terminal of the second processor 520 is used to generate a current sensing signal.

[0308] In one embodiment, the input terminal of the second processor 520 is indirectly coupled to the second sensing module 210 and / or the third sensing module 220.

[0309] For example, the first input terminal of the second processor 520 is coupled to the output terminal of the second amplifier 420. The second input terminal of the second processor 520 is coupled to the output terminal of the third amplifier 420.

[0310] In one embodiment, the second processor 520 generates a current sensing signal based on the sum of the outputs of the second amplifier 420 and the third amplifier 430. The current sensing signal characterizes the common-mode characteristics of the signal magnetic field.

[0311] In one embodiment, the second processor 520 generates a current sensing signal based on the difference between the output of the second amplifier 420 and the output of the third amplifier 430. The current sensing signal characterizes the differential characteristics of the signal magnetic field.

[0312] Figure 13 A fifth embodiment of the present invention is illustrated. This embodiment describes a configuration scheme for the first sensing module. This embodiment can be combined with any technical solution in the present invention that includes a first sensing module. Other modules having the same or similar functions as the first sensing module can also implement this configuration scheme, such as… Figure 7 The sensing module shown in the fifth embodiment is disposed in the first region S1 and / or the fourth region S4.

[0313] The first sensing module 110 includes a Hall element. The first sensing module 110 can be composed of Hall elements. The Hall element operates based on the Hall effect.

[0314] The first sensing module 110 may further include a magnetoresistive unit. The resistance value of the magnetoresistive unit changes in response to the magnetic field applied to it.

[0315] The first sensing module 110 includes a first Hall unit H1. The sensing direction of the first Hall unit H1 is perpendicular to the plane on which the first sensing module 110 is set. The sensing direction of the first Hall unit H1 is perpendicular to the first reference plane. The sensing direction of the first Hall unit H1 is a first direction Z or its opposite direction. The sensing direction of the first Hall unit H1 can indicate that the first Hall unit H1 is sensitive to changes in the magnetic field in that direction.

[0316] The first terminal e11 of the first Hall element H1 is coupled to the power supply terminal Vd. The second terminal e12 of the first Hall element H1 is coupled to the ground terminal GND.

[0317] The first Hall unit H1 also includes a third terminal e13 and a fourth terminal e14. When the first Hall unit H1 is energized and a magnetic field along the first direction Z is applied, the charge is deflected based on the Lorentz force, generating a potential difference between the third terminal e13 and the fourth terminal e14.

[0318] The first Hall unit H1 can generate a voltage-form sensing signal based on the potential difference to reflect the magnetic field applied to the first Hall unit H1.

[0319] The first sensing module 110 can be disposed in the first region S1. The signal magnetic field is set based on the position of the first sensing module 110, and magnetic field components with similar magnetic fields in two directions are generated at the first Hall unit H1, so that the first Hall unit H1 does not generate an output to the signal magnetic field.

[0320] The first magnetic field generator 111, corresponding to the first sensing module 110, applies a standard magnetic field to the first Hall unit H1, and the first Hall unit H1 generates a first sensing signal for calibration in response to the standard magnetic field.

[0321] The location of the Hall unit can be the same as the location of the corresponding sensing module.

[0322] Figure 14 The sixth embodiment of this utility model is illustrated. This embodiment describes a configuration scheme for the first sensing module. This embodiment can be combined with any technical solution in this utility model that includes a first sensing module. Other modules having the same or similar functions as the first sensing module can also implement this configuration scheme, such as… Figure 7 The sensing module shown in the fifth embodiment is disposed in the first region S1 and / or the fourth region S4.

[0323] In this sixth embodiment, the first sensing module 110 includes two or more Hall units.

[0324] The first sensing module 110 includes a first Hall unit H1. The sensing direction of the first Hall unit H1 is perpendicular to the plane on which the first sensing module 110 is set. The sensing direction of the first Hall unit H1 is perpendicular to a first reference plane. The sensing direction of the first Hall unit H1 is a first direction Z or its opposite direction.

[0325] The first terminal e11 of the first Hall unit H1 is coupled to the power supply terminal Vd. The second terminal e12 of the first Hall unit H1 is coupled to the ground terminal GND. The first Hall unit H1 also includes a third terminal e13 and a fourth terminal e14.

[0326] The first sensing module 110 includes a fifth Hall element H5. The sensing direction of the fifth Hall element H5 is perpendicular to the plane on which the first sensing module 110 is set. The sensing direction of the fifth Hall element H5 is perpendicular to the first reference plane. The sensing direction of the fifth Hall element H5 is the first direction Z or its opposite direction. The sensing direction of the fifth Hall element H5 indicates that the fifth Hall element H5 is sensitive to changes in the magnetic field in that direction.

[0327] The first terminal e51 of the fifth Hall element H5 is coupled to the power supply terminal Vd. The second terminal e52 of the fifth Hall element H5 is coupled to the ground terminal GND.

[0328] The fifth Hall unit H5 also includes a third terminal e53 and a fourth terminal e54. When the fifth Hall unit H5 is energized and a magnetic field is applied in the opposite direction to the first direction Z, the charge is deflected based on the Lorentz force, generating a potential difference between the third terminal e53 and the fourth terminal e54.

[0329] The fifth Hall unit H5 can generate a voltage-form sensing signal based on the potential difference to reflect the magnetic field applied to the fifth Hall unit H5.

[0330] The third terminal e53 of the fifth Hall unit H5 is coupled to the fourth terminal e14 of the first Hall unit H1. The fourth terminal e54 of the fifth Hall unit H5 is coupled to the third terminal e13 of the first Hall unit H1.

[0331] When at least a portion of the conductor 700 engages with a current sensing device, a portion of the first Hall unit H1 is disposed on one side of the axis AX1 along the current direction of the conductor 700 in the portion engaging with the current sensing device, and the other portion is disposed on the other side of the axis AX1. When the axis AX1 extends along a third direction Y, the first Hall units H1 are distributed on both sides of the third direction Y. The first Hall unit H1 can be symmetrical with respect to the axis AX1. Thus, the signal magnetic field generated when the conductor 700 is energized forms a magnetic field component with an opposite direction at the first Hall unit H1, so that the first Hall unit H1 does not output the magnetic field component of the signal magnetic field at the first region S1 (or, at the first Hall unit H1).

[0332] When at least a portion of the conductor 700 engages with the current sensing device, a portion of the first Hall element H1 is disposed on one side of the conductor 700 along the geometric center GC1 of the conductor 700 in the portion engaging with the current sensing device, and another portion is disposed on the opposite side of the geometric center GC1. The first Hall elements H1 are distributed on opposite sides of the geometric center GC1. The first Hall elements H1 may be symmetrical with respect to the geometric center GC1. Thus, the first Hall elements H1 do not generate an output for the magnetic field component of the signal magnetic field at the first region S1 (or, at the first Hall element H1).

[0333] The fifth Hall unit H5 can be configured in the same or similar way as the first Hall unit H1 relative to the signal magnetic field, so that the fifth Hall unit H5 does not produce an output for the magnetic field component of the signal magnetic field at the first region S1 (or at the fifth Hall unit H5).

[0334] When at least a portion of the conductor 700 is engaged with a current sensing device, the first Hall unit H1 and the fifth Hall unit H5 are spaced apart along the direction of the current generated in the portion of the conductor 700 engaged with the current sensing device when energized. The direction of the current generated in the conductor 700 when energized can be along a third direction Y, and the first Hall unit H1 and the fifth Hall unit H5 can be spaced apart along the third direction Y.

[0335] The standard magnetic field Br has a magnetic field component at the first Hall unit H1, which is the first standard component Br1.

[0336] The standard magnetic field Br has a magnetic field component at the fifth Hall unit H5, which is the fifth standard component Br5.

[0337] The direction of the magnetic field component of the standard magnetic field Br at the first Hall unit H1 is opposite to the direction of the magnetic field component of the standard magnetic field Br at the fifth Hall unit H5. The directions of the first standard component Br1 and the fifth standard component Br5 are opposite.

[0338] Thus, based on the connection of the first Hall unit H1 and the fifth Hall unit H5, the generated sensing signal is equivalent to the superposition of the components of the standard magnetic field at the two Hall units. Furthermore, based on the differential connection, the first sensing module 110 possesses anti-interference capability against uniform environmental magnetic fields.

[0339] In summary, the current sensing device provided by this utility model applies a preset standard magnetic field to the first sensing module by setting a first magnetic field generator. When there is a difference between the actual sensing result of the first sensing module corresponding to the standard magnetic field and the preset standard magnetic field information, the current sensing signal can be calibrated according to this difference, thereby eliminating linear errors and improving the accuracy of current sensing. Moreover, this process does not affect the sensing of the signal magnetic field by the second sensing module, so it does not affect the actual sensitivity of the current sensing device. Furthermore, based on the positional relationship between the conductor and the sensing surface of the first sensing module, the sensing direction of the first sensing module is the first direction. The signal magnetic field generated by the conductor has no effect on the output of the first sensing module. The first sensing signal can be directly used for calibration without the need to eliminate the signal magnetic field component through calculation, which improves the bandwidth of the current sensing device to a certain extent.

[0340] It should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This way of describing the specification is only for clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

[0341] The detailed descriptions listed above are merely specific descriptions of feasible implementations of this utility model, and are not intended to limit the scope of protection of this utility model. All equivalent implementations or modifications made without departing from the spirit of this utility model should be included within the scope of protection of this utility model.

Claims

1. A current sensing device, characterized in that, The current sensing device is used to sense the current in a conductor, and the current sensing device includes: The first magnetic field generator is used to apply a preset standard magnetic field to the first sensing module; A first sensing module is disposed on a first reference surface and is used to sense a magnetic field to generate a first sensing signal; the sensing direction of the first sensing module is along a first direction. The second sensing module is used to sense the signal magnetic field generated by the conductor when it is energized to generate a second sensing signal; the current sensing device generates a current sensing signal based on the second sensing signal, and the first sensing signal is used to calibrate the current sensing signal; When at least a portion of the conductor engages with the current sensing device, the first reference surface is located on a first direction side of the portion of the conductor engaging with the current sensing device, and the first reference surface is parallel to the direction of the current generated in the portion of the conductor engaging with the current sensing device when energized. The sensing surface of the first sensing module is symmetrical about the axis along the current direction of the part of the conductor that cooperates with the current sensing device, or about the geometric center of the part of the conductor that cooperates with the current sensing device.

2. The current sensing device according to claim 1, characterized in that, The current sensing device further includes: A first processor, whose input is directly or indirectly coupled to the first sensing module, and whose output is used to generate a calibration signal; the first processor is configured to be at least one of the following: The current sensing signal is calibrated based on the difference between the value of the first sensing signal and the first preset value, wherein the first preset value is determined based on the magnetic field strength of the standard magnetic field. The output of the first processor is coupled to the input of the second sensing module and is used to adjust the drive current of the second sensing module. The output of the first processor is coupled to the input of the second sensing module and is used to adjust the driving voltage of the second sensing module. The output of the first processor is coupled to the second amplifier for adjusting the amplification factor of the second amplifier; the input of the second amplifier is coupled to the output of the second sensing module for amplifying the second sensing signal. The output of the first processor is coupled to the second processor and is used to adjust the operational gain of the second sensing signal; the input of the second processor is directly or indirectly coupled to the output of the second sensing module.

3. The current sensing device according to claim 1, characterized in that, Also includes: A substrate disposed on the first reference surface includes a first region and a second region different from the first region; The first sensing module is disposed in a first region of the substrate, and the second sensing module is disposed in a second region of the substrate; When at least a portion of the conductor engages with the current sensing device, the portion of the conductor engaging with the current sensing device is located on the opposite side of the first direction of the first region.

4. The current sensing device according to claim 3, characterized in that, The first surface of the substrate, the sensing surface of the first sensing module, and the first reference surface overlap, and the first sensing module is disposed within the substrate; when at least a portion of the conductor cooperates with the current sensing device, the first magnetic field generator is located on the side of the first reference surface near the portion of the conductor that cooperates with the current sensing device.

5. The current sensing device according to claim 3, characterized in that, The substrate further includes a third region, a fourth region, and a fifth region; the second region, the first region, the third region, the fourth region, and the fifth region are arranged sequentially along a second direction; when at least a portion of the conductor cooperates with the current sensing device, the second direction is perpendicular to the direction of the current generated in the portion of the conductor that cooperates with the current sensing device when energized; The second region, the third region, and the fifth region are used to set up a plurality of sensing modules. The sensing modules set up in the second region, the third region, and the fifth region are used to sense the signal magnetic field generated by the conductor when it is energized to generate a sensing signal. The first region and the fourth region are used to set up a plurality of sensing modules and a corresponding magnetic field generator. The sensing modules set up in the first region and the fourth region are used to sense the magnetic field to generate a sensing signal. When at least a portion of the conductor engages with the current sensing device, at least a portion of the portion of the conductor engaging with the current sensing device is located on the opposite side of the first direction of the first region, and at least another portion is located on the opposite side of the first direction of the fourth region.

6. The current sensing device according to claim 5, characterized in that, The conductor includes a first conductor segment located in a first region, a second conductor segment located in a fourth region, and a third conductor segment connecting the first conductor segment and the second conductor segment; the projection of the third conductor segment on the substrate does not overlap with the third region.

7. The current sensing device according to claim 1, characterized in that, Also includes: The third sensing module is used to sense the signal magnetic field generated by the conductor when it is energized to generate a third sensing signal; The current sensing device generates a current sensing signal based on the second sensing signal and the third sensing signal; When at least a portion of the conductor engages with the current sensing device, the second sensing module is located on the opposite side of a second direction relative to the portion of the conductor engaging with the current sensing device, and the third sensing module is located on the side of the second direction of the portion of the conductor engaging with the current sensing device, the second direction being perpendicular to the direction of the current generated when the conductor is energized, or... The current sensing device further includes a substrate, the second sensing module is disposed in a second region of the substrate, and the third sensing module is disposed in a third region of the substrate. The second region and the third region are arranged sequentially along a second direction, which is perpendicular to the direction of the current generated by the conductor when it is energized.

8. The current sensing device according to claim 7, characterized in that, Also includes: The fourth sensing module is used to sense the signal magnetic field generated by the conductor when it is energized to generate a fourth sensing signal; The fifth sensing module is used to sense the signal magnetic field generated by the conductor when it is energized to generate a fifth sensing signal; the current sensing device generates a current sensing signal based on the second sensing signal, the third sensing signal, the fourth sensing signal and the fifth sensing signal; When at least a portion of the conductor engages with the current sensing device, the fourth sensing module is located on the opposite side of the second direction of the portion of the conductor engaging with the current sensing device, and the fifth sensing module is located on the side of the second direction of the portion of the conductor engaging with the current sensing device, or... The current sensing device further includes a substrate, the fourth sensing module is disposed in the second region of the substrate, and the fifth sensing module is disposed in the third region of the substrate.

9. The current sensing device according to claim 7, characterized in that, The current sensing device further includes: The substrate is disposed on the first reference surface and further includes a first region, a second region disposed on the opposite side of the second direction of the first region, and a third region disposed on the second direction of the first region; The first sensing module is disposed in a first region of the substrate, the second sensing module is disposed in a second region of the substrate, and the third sensing module is disposed in a third region of the substrate. The second sensing module and the third sensing module are symmetrically arranged with respect to the first sensing module.

10. The current sensing device according to claim 1, characterized in that, The current sensing device satisfies at least one of the following: The first sensing module includes a Hall effect unit; The second sensing module includes a Hall effect sensor.

11. The current sensing device according to claim 10, characterized in that, The second sensing module includes: The second Hall element has a first end coupled to a power supply terminal and a second end coupled to a ground terminal; the sensing direction of the second Hall element is perpendicular to the plane on which the second sensing module is set. The current sensing device further includes: The third sensing module is used to sense the signal magnetic field generated by the conductor when it is energized to generate a third sensing signal; the current sensing device generates a current sensing signal based on the second sensing signal and the third sensing signal. The third sensing module includes: The third Hall unit has a first end coupled to the power supply terminal, a second end coupled to the ground terminal, a third end coupled to the fourth end of the second Hall unit, and a fourth end coupled to the third end of the second Hall unit; the sensing direction of the third Hall unit is perpendicular to the plane on which the third sensing module is set. The direction of the magnetic field component of the signal magnetic field at the second Hall unit is opposite to the direction of the magnetic field component of the signal magnetic field at the third Hall unit.

12. The current sensing device according to claim 10, characterized in that, The second sensing module includes: The second Hall element has a first end coupled to a power supply terminal and a second end coupled to a ground terminal; the sensing direction of the second Hall element is perpendicular to the plane on which the second sensing module is set. The current sensing device further includes: The third sensing module is used to sense the signal magnetic field generated by the conductor when it is energized to generate a third sensing signal; the current sensing device generates a current sensing signal based on the second sensing signal and the third sensing signal. The second amplifier has its first input terminal coupled to the third terminal of the second Hall element, its second input terminal coupled to the fourth terminal of the second Hall element, and its output terminal used to generate a current sensing signal. The third amplifier, whose output is used to generate a current sensing signal; The third sensing module includes: The third Hall unit has a first end coupled to the power supply terminal, a second end coupled to the ground terminal, a third end coupled to the first input terminal of the third amplifier, and a fourth end coupled to the second input terminal of the third amplifier; the sensing direction of the third Hall unit is perpendicular to the plane on which the third sensing module is set. When at least a portion of the conductor engages with the current sensing device, the second Hall unit is located on the opposite side of the second direction of the portion of the conductor engaging with the current sensing device, and the third Hall unit is located on the side of the second direction of the portion of the conductor engaging with the current sensing device, such that the direction of the magnetic field component of the signal magnetic field at the second Hall unit is opposite to the direction of the magnetic field component of the signal magnetic field at the third Hall unit, and the second direction is perpendicular to the direction of the current generated when the conductor is energized.

13. The current sensing device according to claim 12, characterized in that, The current sensing device further includes: The second processor has a first input terminal coupled to the output terminal of the second amplifier, and a second input terminal coupled to the output terminal of the third amplifier. The second processor is used to generate a current sensing signal based on the sum of the outputs of the second amplifier and the third amplifier, and / or based on the difference between the outputs of the second amplifier and the third amplifier.

14. The current sensing device according to claim 10, characterized in that, The second sensing module includes: The second Hall element has a first end coupled to a power supply terminal and a second end coupled to a ground terminal; the sensing direction of the second Hall element is perpendicular to the plane on which the second sensing module is set. The fourth Hall element has a first end coupled to the power supply terminal, a second end coupled to the ground terminal, a third end coupled to the third end of the second Hall element, and a fourth end coupled to the fourth end of the second Hall element; the sensing direction of the fourth Hall element is perpendicular to the plane on which the second sensing module is set. The second Hall unit is disposed close to the fourth Hall unit so that when at least a portion of the conductor is engaged with the current sensing device, the direction of the magnetic field component of the signal magnetic field at the second Hall unit is the same as the direction of the magnetic field component of the signal magnetic field at the fourth Hall unit.

15. The current sensing device according to claim 10, characterized in that, The first sensing module includes: The first Hall element has a first end coupled to a power supply terminal and a second end coupled to a ground terminal; the sensing direction of the first Hall element is perpendicular to the plane on which the first sensing module is set. The fifth Hall element has its first end coupled to the power supply terminal, its second end coupled to the ground terminal, its third end coupled to the fourth end of the first Hall element, and its fourth end coupled to the third end of the first Hall element; the sensing direction of the first Hall element is perpendicular to the setting plane of the first sensing module. When at least a portion of the conductor engages with the current sensing device, the first Hall unit and the fifth Hall unit are spaced apart along the direction of the current generated in the portion of the conductor that engages with the current sensing device when energized. The direction of the magnetic field component of the standard magnetic field at the first Hall unit is opposite to the direction of the magnetic field component of the standard magnetic field at the fifth Hall unit.

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