VCSEL chip, optical module and optical emission assembly thereof
By integrating a heating device into the VCSEL chip, the problem of increased internal resistance at low temperatures was solved, enabling the VCSEL chip to operate normally and maintain its transmission performance at low temperatures.
Patent Information
- Application Number
- CN202520590993.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-31
- Publication Date
- 2026-02-24
- Estimated Expiration
- 2035-03-31
AI Technical Summary
The increased internal resistance of VCSELs at low temperatures leads to a decrease in transmission performance, affecting their normal operation.
A heating device is integrated into the VCSEL chip to actively heat the VCSEL device and keep it within a suitable temperature range, thus avoiding an increase in internal resistance at low temperatures.
Ensure that the VCSEL chip can work normally in low-temperature environments, maintain transmission performance, and avoid malfunctions or failures caused by low-temperature internal resistance.
Smart Images
Figure CN223942211U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor optical emission components, specifically to a VCSEL chip, an optical module and its optical emission components. Background Technology
[0002] With the continuous development of high-speed optical communication technology, VCSELs (Vertical Cavity Surface Emitting Lasers) are widely used in multimode optical modules. Optical emission components are used in optical network terminals (ONTs) to convert electrical signals into optical signals; they mainly include lasers and driving circuits for driving the lasers.
[0003] Optical network terminals are required to operate in environments as low as -40 degrees Celsius. In low-temperature environments, the internal resistance of VCSELs will increase as the temperature decreases. The increased internal resistance of VCSELs will lead to a decrease in their transmission performance and affect their normal operation. Utility Model Content
[0004] This invention provides a VCSEL chip, an optical module, and its optical emitting component to solve the problem that VCSELs cannot function properly in low-temperature environments.
[0005] In one embodiment, a VCSEL chip is provided, comprising:
[0006] A VCSEL device, comprising a substrate, a first mirror component, a resonant cavity component, and a second mirror component arranged sequentially, wherein the resonant cavity component is used to generate standing waves; and
[0007] A heating device is disposed on the side of the substrate facing away from the first reflector component, and the heating device is used to heat the VCSEL device.
[0008] In one embodiment, the bottom surface of the substrate facing away from the first reflector component is provided with a heat preservation groove, the heat preservation groove is disposed near or around the heating device, and the heat preservation groove is used to contain the heat generated by the heating device.
[0009] In one embodiment, the heat-insulating groove is an annular groove, which is arranged around the heating device.
[0010] In one embodiment, the insulation tank is filled with a thermally conductive material or air.
[0011] In one embodiment, the bottom surface of the substrate facing away from the first reflector component is provided with at least one heat preservation groove, and the at least one heat preservation groove extends along a straight line and / or a curve, respectively.
[0012] In one embodiment, the heating device is a TiN heater, a W heater, or a Cu heater.
[0013] In one embodiment, the heating device has a flat structure and a heating surface that contacts the bottom surface of the substrate facing away from the first reflector component.
[0014] In one embodiment, the system includes a plurality of VCSEL devices, the substrates of the plurality of VCSEL devices are connected in an integral structure, and each VCSEL device is provided with a heating device.
[0015] In one embodiment, an optical emitting component for an optical module is provided, including a driver and at least one of the aforementioned VCSEL chips electrically connected to the driver.
[0016] In one embodiment, an optical module includes an optical emitting component and an optical receiving component, wherein the optical emitting component is the optical emitting component described above.
[0017] According to the above embodiments, a VCSEL chip, optical module, and optical emitting component include a VCSEL device and a heating device. The heating device is located at the bottom or around the VCSEL device and can actively heat the VCSEL device. When the external environment is low temperature, the active heating of the heating device can keep the VCSEL device within a suitable temperature range, preventing the transmission performance of the VCSEL device from decreasing due to increased internal resistance at low temperatures. In other words, the heating device ensures that the VCSEL device can maintain its transmission performance in low-temperature environments, thus enabling normal operation in low-temperature environments.
[0018] Furthermore, the substrate is provided with a heat preservation groove, which can contain and concentrate the heat generated by the heating device, effectively preventing heat dissipation and achieving a better heat preservation effect.
[0019] The VCSEL chip in this embodiment can directly integrate the heating device on the original VCSEL device using semiconductor technology, which can reduce the size of the heating device and the manufacturing cost; and can improve the response speed of the heating device when heating. Attached Figure Description
[0020] Figure 1 This is a cross-sectional schematic diagram of a VCSEL chip in one embodiment;
[0021] Figure 2 A bottom view of a VCSEL chip in one embodiment;
[0022] Figure 3This is a cross-sectional schematic diagram of a VCSEL chip in one embodiment;
[0023] Figure 4 A bottom view of a VCSEL chip in one embodiment;
[0024] Figure 5 This is a cross-sectional schematic diagram of a VCSEL chip in one embodiment;
[0025] Figure 6 This is a cross-sectional schematic diagram of a VCSEL chip in one embodiment;
[0026] The accompanying diagrams are labeled as follows:
[0027] 1- VCSEL device, 11- substrate, 111- groove, 112- insulation groove, 112- insulation cavity, 113- connection part, 114- thermally conductive material, 12- first reflector component, 13- resonant cavity component, 131- active layer, 132- photoelectric confinement layer, 14- second reflector component, 15- first electrode component, 16- second electrode component;
[0028] 2-Heating device. Detailed Implementation
[0029] The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments. Similar elements in different embodiments are referred to by related similar element reference numerals. In the following embodiments, many details are described to facilitate a better understanding of the present application. However, those skilled in the art will readily recognize that some features may be omitted in different situations, or may be replaced by other elements, materials, or methods. In some cases, certain operations related to the present application are not shown or described in the specification. This is to avoid obscuring the core parts of the present application with excessive description. For those skilled in the art, detailed description of these related operations is not necessary; they can fully understand the related operations based on the description in the specification and general technical knowledge in the art.
[0030] Furthermore, the features, operations, or characteristics described in the specification can be combined in any suitable manner to form various embodiments. At the same time, the steps or actions in the method description can be rearranged or adjusted in a manner obvious to those skilled in the art. Therefore, the various orders in the specification and drawings are only for the clear description of a particular embodiment and do not imply a necessary order, unless otherwise stated that a particular order must be followed.
[0031] The serial numbers assigned to components in this document, such as "first" and "second," are used only to distinguish the described objects and have no sequential or technical meaning. The terms "connection" and "linkage" used in this application, unless otherwise specified, include both direct and indirect connections (linkages).
[0032] In one embodiment, a VCSEL chip is provided. The VCSEL chip is a crucial component within the optical emitting assembly of an optical module. The VCSEL chip primarily includes a VCSEL device, which is a Vertical Cavity Surface Emitting Laser (VCSEL) with a multi-layer PN junction stacked structure. The VCSEL device is used to generate and emit laser light. This VCSEL chip also includes a heating device located at the bottom of the VCSEL device. This heating device is an active heating device that actively heats the VCSEL device, maintaining it within a suitable temperature range. This prevents performance degradation due to increased internal resistance at low temperatures, thus avoiding malfunctions or failures in low-temperature environments. For example, the VCSEL device can operate normally at -40 degrees Celsius. In relatively high-temperature environments, the heating device can be turned off to prevent overheating of the VCSEL device.
[0033] Please refer to Figure 1 and Figure 2 In this embodiment, the VCSEL chip mainly includes a VCSEL device 1 and a heating device 2. The heating device 2 is located at the bottom of the VCSEL device 1. The top of the VCSEL device 1 is used to emit lasers. The heating device 2 is located at the bottom of the VCSEL device 1 and will not affect the laser emission of the VCSEL device 1. The VCSEL device 1 covers the heating device 2, so the VCSEL device 1 can be used to keep the temperature and prevent heat loss.
[0034] VCSEL device 1 mainly includes, from bottom to top, a substrate 11, a first reflector component 12, a resonant cavity component 13, and a second reflector component 14. The resonant cavity component 13 is formed by limiting the first reflector component 12 and the second reflector component 14, that is, the area between the first reflector component 12 and the second reflector component 14 is the resonant cavity. The resonant cavity is used to generate standing waves, which are waves formed by two coherent waves propagating in opposite directions along the same straight line and superimposing on each other. Specifically, when the two waves are in phase, their amplitudes are added together to form antinodes (i.e., crests). When the two waves are out of phase, their amplitudes are subtracted to form nodes (i.e., troughs). Therefore, the positions of the crests and troughs of the standing wave are fixed.
[0035] The substrate 11 is located at the bottom of the VCSEL device 1. The substrate 11 is made of a non-laser-transparent material, including but not limited to GaAs, InP, Si, etc. The substrate 11 is used to block the laser generated by the VCSEL device 1 from escaping from the bottom of the VCSEL device 1. The first reflector component 12 and the second reflector component 14 may include a film layer with a periodically changing refractive index to achieve efficient reflection or transmission of light within a specific wavelength range. The film layer with a periodically changing refractive index may be made of semiconductor materials, dielectric materials, metal-dielectric hybrid materials, etc. The first reflector component 12 may be an N-type semiconductor layer, and the second reflector component 14 may be a P-type semiconductor layer. The materials of the N-type semiconductor layer and the P-type semiconductor layer may include but are not limited to GaAs, AlGaAs, etc., and are not limited here. As long as the resonant cavity can be defined, it is within the protection scope of this embodiment.
[0036] The resonant cavity component 13 may include a plurality of stacked active regions 131 and at least one photoelectric confinement layer 132. The number of active regions 131 may be, for example, two, three, four, etc. The active regions 131 are used to generate photons by stimulated emission, and the emitted photons are continuously reflected in the resonant cavity defined by the first reflector component 12 and the second reflector component 14, and are continuously amplified during the reflection process, so as to finally emit laser light at a specific wavelength and with sufficient energy.
[0037] In other embodiments, the first reflector component 12 may also be a P-type semiconductor layer, and the second reflector component 14 may also be an N-type semiconductor layer.
[0038] In this embodiment, the resonant cavity component 13 may include a plurality of active regions 131 stacked together and at least one photoelectric confinement layer 132. For example, the number of active regions 131 may be 2, 3, 4, etc., and the number of active regions 131 can be selected and set according to the usage requirements. Multiple active regions 131 can emit light simultaneously, which can realize the effective superposition of photons and meet the requirements of signal transmission.
[0039] The active region 131 is used to generate photons for stimulated emission, and the emitted photons are continuously reflected in the resonant cavity defined by the first reflector component 12 and the second reflector component 14, and are continuously enhanced during the reflection process, so as to finally emit laser light at a specific wavelength and with sufficient energy.
[0040] The number of photoelectric confinement layers 132 is generally no greater than the number of active regions 131, for example, there can be 2 or 3, etc., with multiple photoelectric confinement layers 132 and multiple active regions 131 alternately distributed vertically. The photoelectric confinement layer 132 is typically an oxide confinement layer, obtained by oxidizing a high-alumina P-DBR (Distributed Bragg Reflector). The photoelectric confinement layer 132 can also be a tunnel junction type, air column type, or ion implantation type confinement layer. The photoelectric confinement layer 132 is used to define the light-emitting area of the VCSEL device 1. The photoelectric confinement layer 132 also restricts the flow of current, ensuring that the current only flows within the area defined by the photoelectric confinement layer 132, thereby reducing energy consumption and increasing current density. The photoelectric confinement layer 132 can also confine the light field within the light-emitting area defined by the photoelectric confinement layer 132, reducing light scattering and diffraction, improving beam quality, and enhancing signal transmission quality.
[0041] In this embodiment, the VCSEL device 1 further includes a first electrode component 15 and a second electrode component 16. The first electrode component 15 can be disposed on the first reflector component 12; the second electrode component 16 can be disposed on the second reflector component 14. When the first reflector component 12 is connected to an N-type semiconductor layer, the first electrode component 15 is a negative electrode structure; when the second reflector component 14 is connected to a P-type semiconductor layer, the second electrode component 16 is a positive electrode structure; or, when the first reflector component 12 is connected to a P-type semiconductor layer, the first electrode component 15 is a positive electrode structure; when the second reflector component 14 is connected to an N-type semiconductor layer, the second electrode component 16 is a negative electrode structure. The first electrode component 15 and the second electrode component 16 are used to connect to a power supply circuit and to power the VCSEL device 1 to generate laser light.
[0042] In this embodiment, the heating device 2 is located at the bottom of the VCSEL device 1, and the VCSEL device 1 covers the heating device 2. The heating device 2 heats the VCSEL device 1 from the bottom, and the VCSEL device 1 covering the heating device 2 provides better heat preservation. Alternatively, the VCSEL device 1 can partially cover the heating device 2, allowing the heating device 2 to heat the VCSEL device 1 from the bottom. Positioning the heating device 2 at the center of the bottom of the VCSEL device 1 allows the VCSEL device 1 to more effectively absorb the heat generated by the heating device 2, preventing heat dissipation.
[0043] In other embodiments, the heating device 2 may also be a ring structure, disposed around the VCSEL device 1, with the VCSEL device 1 located inside the heating device 2. The heating device 2 can also achieve active heating and heat preservation of the VCSEL device 1.
[0044] In this embodiment, the VCSEL device 1 has a cylindrical structure, and the heating device 2 can also be cylindrical. The outer diameter of the heating device 2 is smaller than the outer diameter of the VCSEL device 1, and their center lines are aligned and coincident. Of course, the outer diameter of the heating device 2 can also be equal to the outer diameter of the VCSEL device 1 to achieve more efficient heating.
[0045] The heating device 2 can be, but is not limited to, a metal heating device or a semiconductor heating device, such as a TiN heater, a W heater, a Cu heater, etc.
[0046] The heating device 2 is preferably a flat structure, with a relatively large heating surface and a relatively thin thickness, for example, the thickness of a TiN heater is 100 nm. The heating surface of the heating device 2 can be directly attached to the bottom surface of the substrate 11 facing away from the first reflector component 12, and the heating device 2 is in direct contact with the bottom surface of the substrate 11. The heating device 2 and the substrate 11 can be fixed together by means of bonding or other methods. The heat generated by the heating device 2 is directly transferred to the substrate 11 to heat the VCSEL device 1. The thinness of the heating device 2 can reduce the overall height and volume of the VCSEL chip, and also allows the VCSEL device 1 to completely cover the heating device 2. The heating device 2 is located at the bottom of the VCSEL device 1, and there are small gaps around the heating device 2, which can improve the heat preservation effect and prevent heat loss.
[0047] In other embodiments, the top and sides of the VCSEL device 1 may be covered with an insulation layer, which may be an insulation film or other insulation groove. The insulation layer can effectively prevent the heat generated by the heating device 2 from being lost, and provide heating and insulation effect for the VCSEL chip.
[0048] In this embodiment, the heating device 2 can be a heating layer. The bottom surface of the substrate 11 is formed with a heating layer by at least one of sputtering, ion plating, chemical plating, chemical vapor deposition, thermal spraying, evaporation and electroplating, that is, the heating device 2 is formed on the bottom surface of the substrate 11.
[0049] In this embodiment, the substrate 11 is provided with a heat preservation groove 112, which has a heat preservation cavity 1121. At least a portion of the heat preservation cavity 1121 of the heat preservation groove 112 is located in the area between the heating device 2 and the first reflector component 12. The heat preservation cavity 1121 of the heat preservation groove 112 can be filled with air. Air has low thermal conductivity, which can concentrate heat at the lower part of the VCSEL device 1. That is, the heat preservation groove 112 can be used to contain the heat generated by the heating device 2, reduce heat dissipation, and improve heating efficiency and heat preservation time in low-temperature environments.
[0050] The heat preservation tank 112 has an opening on the bottom surface of the substrate 11, which communicates with the heat preservation cavity 1121 of the heat preservation tank 112. This arrangement facilitates the processing of the heat preservation tank 112 and allows air to enter the heat preservation cavity 1121 of the heat preservation tank 112. The heat preservation tank 112 with its tank structure can be fabricated using dry etching and / or wet etching methods.
[0051] The heat preservation tank 112 is preferably an annular tank, with a connecting part 113 in the middle of the annular tank, and the heating device 2 is connected to the connecting part 113. This arrangement allows the heat preservation tank 112 to be distributed around the heating device 2, which can improve the heat preservation effect.
[0052] Specifically, the vertical cross-section of the connecting part 113 can be an inverted T-shaped structure. The connecting part 113 includes a vertical connecting column and a horizontal connecting plate. The vertical connecting column is located in the middle of the annular groove, and the horizontal connecting plate is located on the outside of the annular groove. That is, the vertical connecting column is arranged along the direction of laser emission of the VCSEL device 1, and the horizontal connecting plate is perpendicular to the direction of laser emission of the VCSEL device 1. The heating device 2 is connected to the horizontal connecting plate. Setting the connecting part 113 as an inverted T-shaped structure can ensure that the heating device 2 and the substrate 11 have sufficient contact area. It can also extend most of the heat preservation cavity 1121 of the heat preservation groove 112 to the top of the heating device 2, which can greatly improve the heating efficiency and heat preservation time in low-temperature environments.
[0053] In this embodiment, the VCSEL chip includes a VCSEL device 1 and a heating device 2. The heating device 2 is located at the bottom of the VCSEL device 1, and can actively heat the VCSEL device 1. Its bottom location also prevents heat loss. Furthermore, the substrate 11 has a heat preservation groove 112, which can contain and concentrate the heat generated by the heating device 2, effectively preventing heat dissipation and providing heat preservation. When the external environment is low, the active heating of the heating device 2 allows the VCSEL device 1 to remain within a suitable temperature range, preventing the transmission performance of the VCSEL device 1 from decreasing due to increased internal resistance at low temperatures. In other words, the heating device 2 ensures that the VCSEL device 1 can maintain its transmission performance even in low-temperature environments, enabling normal operation in such conditions.
[0054] In this embodiment, the VCSEL chip can be directly integrated with the heating device 2 on the original VCSEL device 1 using semiconductor technology, which can reduce the size and manufacturing cost of the heating device 2; and improve the response speed of the heating device 2 when heating.
[0055] In one embodiment, the insulation groove 112 can also have other structures. For example, the insulation groove 112 may include one or more linear insulation grooves, which extend along straight lines and / or curves. The linear insulation groove also has an insulation cavity 1121, which can provide insulation.
[0056] In one embodiment, the heat preservation tank 112 can also be a heat preservation cavity, which is located inside the substrate 11. The heat preservation cavity has a closed heat preservation cavity body 1121, which can also improve the heating efficiency and heat preservation time in low temperature environments.
[0057] In one embodiment, the bottom surface of the substrate 11 of the VCSEL device 1 is provided with a plurality of heating devices 2, which are evenly distributed on the bottom surface of the substrate 11. This arrangement allows more heating devices 2 to be covered on the bottom surface of the substrate 11, thereby increasing the contact area between the heating devices 2 and the substrate 11, effectively improving heating efficiency, and achieving a more uniform heating effect.
[0058] Please refer to Figure 3 In one embodiment, the insulation cavity 1121 of the insulation tank 112 is filled with a thermally conductive material 114. The thermally conductive material 114 can be a material with high thermal conductivity, such as a solidified material filled with metal powder. The thermally conductive material 114 can improve the heating efficiency in low-temperature environments. At the same time, the thermally conductive material 114 is different from the substrate 11 material, forming a multi-layer insulation effect, which can improve the insulation time.
[0059] Please refer to Figure 4 and Figure 5 In one embodiment, the substrate 11 may not be provided with a heat preservation groove 112, and the heating device 2 is in contact with the bottom surface of the substrate 11. In this structure, the heating device 2 can also actively heat the VCSEL device 1, so that the VCSEL device 1 can still maintain its transmission performance in a certain low temperature environment, so as to achieve normal operation in a low temperature environment.
[0060] Please refer to Figure 6 In one embodiment, the VCSEL chip includes at least two VCSEL devices 1, which are connected as a single structure. The substrates 11 of the at least two VCSEL devices 1 are also a single structure, and the first reflector components 12 of the at least two VCSEL devices 1 can also be a single structure.
[0061] At least two VCSEL devices 1 can be arranged in an array, such as a 4×4 array. Each VCSEL device 1 is provided with at least one heating device 2, for example, one heating device 2 for one VCSEL device 1, so that each VCSEL device 1 has an independent heating device 2 for heating and heat preservation, ensuring that all VCSEL devices 1 on the VCSEL chip can work normally in a low-temperature environment.
[0062] The VCSEL chip is equipped with multiple VCSEL devices 1, which can improve the linear intensity of the emitted laser to meet the needs of more application scenarios.
[0063] In one embodiment, an optical emitting component for an optical module is provided. This optical emitting component includes a driver and at least one VCSEL chip as described in any of the above embodiments. The driver is connected to the VCSEL chip and is used to drive the VCSEL device 1 on the VCSEL chip to generate and emit laser light. The optical emitting component is part of the optical module and is used to convert electrical signals into optical signals, enabling data transmission via light.
[0064] In this embodiment, the optical emitting component for the optical module is equipped with a heating device 2 in the VCSEL chip, which enables the optical emitting component to maintain good transmission performance in a low-temperature environment, thereby ensuring the quality of optical communication.
[0065] In one embodiment, an optical module is provided. The optical module of this embodiment includes the optical emitting component for the optical module described above. The optical module emits optical signals through the optical emitting component to transmit signals.
[0066] Because the VCSEL chip is equipped with a heating device 2, the optical module can maintain good transmission performance in low-temperature environments, thereby ensuring the quality of optical communication.
[0067] The above-described specific examples are for illustrative purposes only and are not intended to limit the scope of this invention. Those skilled in the art to which this invention pertains can make various simple deductions, modifications, or substitutions based on the concept of this invention.
Claims
1. A VCSEL chip, characterized in that, include: The VCSEL device includes a substrate, a first mirror component, a resonant cavity component, and a second mirror component arranged sequentially, wherein the resonant cavity component is used to generate standing waves; as well as A heating device is disposed on the side of the substrate facing away from the first reflector component, and the heating device is used to heat the VCSEL device.
2. The VCSEL chip as described in claim 1, characterized in that, The substrate has a heat preservation groove on its bottom surface facing away from the first reflector component. The heat preservation groove is located near or around the heating device and is used to contain the heat generated by the heating device.
3. The VCSEL chip as described in claim 2, characterized in that, The heat preservation groove is an annular groove, which is arranged around the heating device.
4. The VCSEL chip as described in claim 2, characterized in that, The insulation tank is filled with a heat-conducting material or air.
5. The VCSEL chip as described in claim 2, characterized in that, The substrate has at least one heat-insulating groove on its bottom surface facing away from the first reflector component, and the at least one heat-insulating groove extends along a straight line and / or a curve, respectively.
6. The VCSEL chip as described in claim 1, characterized in that, The heating device is a TiN heater, a W heater, or a Cu heater.
7. The VCSEL chip as described in claim 6, characterized in that, The heating device has a flat structure and a heating surface that is in contact with the bottom surface of the substrate facing away from the first reflector component.
8. The VCSEL chip according to any one of claims 1 to 7, characterized in that, It includes multiple VCSEL devices, the substrates of the multiple VCSEL devices are connected as a single structure, and each VCSEL device is provided with a heating device.
9. A light emitting component for an optical module, characterized in that, It includes a driver and at least one VCSEL chip as described in any one of claims 1 to 8 that is electrically connected to the driver.
10. An optical module, characterized in that, It includes an optical emitting component and an optical receiving component, wherein the optical emitting component is the optical emitting component as described in claim 9.