Semiconductor process chamber and semiconductor equipment

Abstract

The embodiment of the utility model provides a semiconductor process chamber and semiconductor equipment, and the semiconductor process chamber comprises a spin coating cavity which is used for carrying out the spin coating of photoresist on a wafer; the cavity door is arranged on the side wall of the spin-coating cavity and used for enabling a conveying arm to take and convey wafers through the cavity door; the gas convection device is arranged in the direction, far away from the spin-coating cavity, of the cavity door, the gas convection device is started when the cavity door is opened, and gas flow formed by the gas convection device forms an airtight barrier at the position of the cavity door so as to prevent organic steam in the spin-coating cavity from overflowing. According to the embodiment of the invention, the wafer processing effect can be improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, specifically to a semiconductor process chamber and semiconductor equipment. Background Technology

[0002] In the semiconductor manufacturing field, semiconductor process chambers are used to process wafers. For example, in the photoresist spin coating process, the wafer is fixed on the spin coating arm by vacuum adsorption. After the photoresist is dropped on, the wafer is rotated at high speed (usually above 4000 rpm) to uniformly coat the film using centrifugal force.

[0003] However, the processing efficiency of wafers still needs to be improved. Utility Model Content

[0004] In view of this, embodiments of this application provide a semiconductor process chamber and semiconductor equipment to improve wafer processing efficiency.

[0005] To achieve the above objectives, the embodiments of this application provide the following technical solutions.

[0006] In a first aspect, embodiments of this application provide a semiconductor process chamber, comprising:

[0007] Spin coating cavity, used for spin coating photoresist on wafers;

[0008] A cavity door located on the side wall of the spin coating cavity is used to allow the transfer arm to pick up and deliver wafers through the cavity door;

[0009] A gas convection device is installed at the cavity door away from the spin coating cavity. The gas convection device is activated when the cavity door is opened. The airflow formed by the gas convection device forms an airtight barrier at the cavity door to prevent organic vapor from escaping from the spin coating cavity.

[0010] Optionally, the gas convection device includes multiple nozzles for generating airflow.

[0011] Optionally, the nozzles are arranged in a linear array, with the nozzle orifice diameter ranging from 0.5 mm to 1.5 mm and the spacing between adjacent nozzles ranging from 3 mm to 8 mm.

[0012] Optionally, the gas source used by the gas convection device is dry and clean air.

[0013] Optionally, the gas convection device further includes a pressure regulating valve for regulating the pressure of the gas flow to a preset range.

[0014] Optionally, the pressure range of the gas flow generated by the gas convection device is from 100 Pa to 500 Pa.

[0015] Optionally, the gas convection device further includes an airflow monitoring sensor for monitoring the pressure of the airflow.

[0016] Optionally, the gas pressure inside the spin coating cavity is greater than the pressure in the conveying area of ​​the conveying arm.

[0017] Optionally, the spin coating chamber is provided with an exhaust unit for discharging organic vapors from the spin coating chamber.

[0018] Secondly, embodiments of this application provide a semiconductor device, including a semiconductor process chamber as described in the first aspect above.

[0019] Compared with the prior art, the technical solution of this application has the following advantages:

[0020] This application provides a semiconductor process chamber and semiconductor equipment. The semiconductor process chamber includes: a spin coating chamber for spin coating photoresist on a wafer; a chamber door disposed on the side wall of the spin coating chamber for a transfer arm to pick up and deliver the wafer through the chamber door; and a gas convection device disposed on the chamber door away from the spin coating chamber. The gas convection device is activated when the chamber door is opened, and the airflow formed by the gas convection device forms an airtight barrier at the chamber door to prevent organic vapors in the spin coating chamber from escaping.

[0021] As can be seen, the semiconductor process chamber provided in this application embodiment, by setting a gas convection device in the direction away from the spin coating chamber at the chamber door, activates the gas convection device when the chamber door is opened, and the airflow formed by the gas convection device forms an airtight barrier at the chamber door to prevent organic vapor in the spin coating chamber from overflowing, thereby avoiding contamination of other batches of wafers in the transfer area, and thus improving the wafer processing effect. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0023] Figure 1 This is a schematic diagram of the structure of the semiconductor process chamber provided in the embodiments of this application.

[0024] In the attached image:

[0025] 100-Spin coating cavity; 101-Exhaust unit; 102-Cavity door; 103-Gas convection device. Detailed Implementation

[0026] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0027] As described in the background section, in the semiconductor manufacturing field, semiconductor process chambers are used to process wafers. For example, in the photoresist spin coating process, the wafer is fixed on the spin coater arm by vacuum adsorption. After the photoresist is applied, the wafer is rotated at high speed (typically above 4000 rpm) to uniformly coat the film using centrifugal force. However, the wafer processing efficiency still needs improvement.

[0028] The inventors, through analysis, concluded that the reason affecting wafer processing performance lies in the following: during high-speed spinning, a large amount of organic matter within the photoresist evaporates and escapes into the spin-coating chamber. To maintain a clean environment for microparticles within the spin-coating chamber, the gas pressure inside is typically higher than the pressure in the transfer arm's transport area. This causes a large amount of organic vapor to enter the transport area from the spin-coating chamber when the transport arm picks up and drops wafers. When products from different processes are in the transport area, the escaped gas lands on the surfaces of other batches of wafers, leading to various defects such as spherical crystals and gel-like crystals, severely impacting the final product performance. Furthermore, long-term diffusion of organic gas onto the transport arm surface forms a photoresist film, causing the transport arm to jam or fail to pick up wafers, seriously affecting the reliability of the transport arm.

[0029] In view of this, embodiments of this application provide a semiconductor process chamber and semiconductor equipment, wherein the semiconductor process chamber includes: a spin coating chamber for spin coating photoresist on a wafer; a chamber door disposed on the side wall of the spin coating chamber for a transfer arm to pick up and deliver the wafer through the chamber door; and a gas convection device disposed on the chamber door away from the spin coating chamber, wherein the gas convection device is activated when the chamber door is opened, and the airflow formed by the gas convection device forms an airtight barrier at the chamber door to prevent organic vapor in the spin coating chamber from escaping.

[0030] As can be seen, the semiconductor process chamber provided in this application embodiment, by setting a gas convection device in the direction away from the spin coating chamber at the chamber door, activates the gas convection device when the chamber door is opened, and the airflow formed by the gas convection device forms an airtight barrier at the chamber door to prevent organic vapor in the spin coating chamber from overflowing, thereby avoiding contamination of other batches of wafers in the transfer area, and thus improving the wafer processing effect.

[0031] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments.

[0032] refer to Figure 1 , Figure 1 This is a schematic diagram of the structure of the semiconductor process chamber provided in the embodiments of this application.

[0033] like Figure 1 As shown, the semiconductor process chamber includes:

[0034] A spin-coating chamber 100 is used for spin-coating photoresist onto a wafer. To maintain a clean environment inside the spin-coating chamber 100 and prevent dust particles from contaminating the wafer, the gas pressure inside the spin-coating chamber is greater than the pressure in the transport area of ​​the transport arm, thereby effectively preventing the entry of external particles. The photoresist contains volatile organic compounds (VOCs). During high-speed spin-coating, these VOCs (such as acetone) rapidly escape from the solution, forming a high concentration of vapor within the spin-coating chamber. An exhaust unit 101 is provided inside the spin-coating chamber 100 to expel the organic vapors. However, the exhaust capacity of the exhaust unit 101 is limited; during continuous spin-coating of photoresist, a large amount of organic vapor accumulates within the spin-coating chamber 100.

[0035] A cavity door 102, located on the side wall of the spin coating cavity 100, allows the transfer arm to pass through the cavity door 102 to pick up and deliver wafers. When wafers need to be picked up or delivered, the cavity door 102 opens, allowing the transfer arm to enter the spin coating cavity 100 to complete the wafer picking and delivery operation. Because the gas pressure inside the spin coating cavity 100 is greater than the pressure in the transfer area of ​​the transfer arm, a large amount of organic vapor will enter the transfer area from the spin coating cavity 100 when the transfer arm picks up and delivers wafers.

[0036] A gas convection device 103 is disposed on the cavity door 102 away from the spin coating cavity 100. The gas convection device 103 is activated when the cavity door is opened. The airflow formed by the gas convection device 103 forms an airtight barrier at the cavity door 102 to prevent organic vapor from escaping from the spin coating cavity 100.

[0037] As can be seen, the semiconductor process chamber provided in this application embodiment, by setting a gas convection device in the direction away from the spin coating chamber at the chamber door, activates the gas convection device when the chamber door is opened, and the airflow formed by the gas convection device forms an airtight barrier at the chamber door to prevent organic vapor in the spin coating chamber from overflowing, thereby avoiding contamination of other batches of wafers in the transfer area, and thus improving the wafer processing effect.

[0038] In an optional implementation, the gas convection device 103 includes multiple nozzles for generating airflow. Specifically, the nozzles are arranged in a linear array, with nozzle orifice diameters ranging from 0.5 mm to 1.5 mm and spacing between adjacent nozzles ranging from 3 mm to 8 mm. The nozzle orifice diameter directly affects the flow characteristics and coverage of the airflow. Smaller orifice diameters can generate more concentrated and high-speed airflow, while larger orifice diameters can provide a wider airflow coverage. By selecting an orifice diameter of 0.5 mm to 1.5 mm, a good balance can be achieved between airflow concentration and coverage. Meanwhile, a spacing of 3 mm to 8 mm between adjacent nozzles helps ensure the uniformity and effectiveness of the airflow. If the nozzle spacing is too small, the airflow may become too concentrated, forming localized high-speed airflows at the expense of overall uniformity; if the spacing is too large, the airflow coverage may be insufficient, affecting the overall effect of the gas convection device.

[0039] In an optional implementation, the gas convection device uses dry, clean air as the gas source. Using dry, clean air as the gas source avoids introducing impurities or contaminants into the spin-coating cavity. In semiconductor manufacturing, even minute impurities can contaminate the wafer, affecting device performance and reliability. Therefore, choosing dry, clean air as the gas source helps reduce the risk of contamination and improve product quality.

[0040] Furthermore, dry, clean air possesses excellent fluidity and controllability, enabling the formation of a uniform and stable airflow. This is crucial for gas convection devices to fulfill their design functions, such as forming airtight barriers and collecting escaping organic gases. A uniform and stable airflow ensures the effective application of gas convection devices in semiconductor process chambers, improving the stability and reliability of the process.

[0041] In an optional implementation, the gas convection device further includes a pressure regulating valve for adjusting the gas flow pressure to a preset range. The pressure range of the gas flow generated by the gas convection device can be, for example, 100 Pa to 500 Pa. The pressure regulating valve ensures a stable flow state within the gas convection device. The gas flow pressure range of 100 Pa to 500 Pa provides sufficient airflow intensity to form an effective airtight barrier, preventing organic gases escaping from the spin coating chamber from intruding into the transfer arm space, while also avoiding unnecessary damage to the wafer that might be caused by excessively high airflow pressure. Furthermore, by incorporating the pressure regulating valve, the gas convection device can be more flexibly and precisely adapted to different process requirements.

[0042] In an optional implementation, the gas convection device further includes an airflow monitoring sensor for monitoring the pressure of the airflow to ensure that the pressure of the airflow formed by the gas convection device is within a preset range.

[0043] As can be seen, the semiconductor process chamber provided in this application embodiment, by setting a gas convection device in the direction away from the spin coating chamber at the chamber door, activates the gas convection device when the chamber door is opened, and the airflow formed by the gas convection device forms an airtight barrier at the chamber door to prevent organic vapor in the spin coating chamber from overflowing, thereby avoiding contamination of other batches of wafers in the transfer area, and thus improving the wafer processing effect.

[0044] This application also provides a semiconductor device, which includes a semiconductor process chamber as described above.

[0045] The foregoing describes multiple embodiment schemes provided by the embodiments of this application. The optional methods described in each embodiment scheme can be combined and cross-referenced with each other without conflict, thereby extending to a variety of possible embodiment schemes. These can all be considered as the embodiment schemes disclosed and published by the embodiments of this application.

[0046] While the embodiments disclosed above are described in this application, this application is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of this application; therefore, the scope of protection of this application should be determined by the scope defined in the claims.

Claims

1. A semiconductor process chamber, characterized in that, include: Spin coating cavity, used for spin coating photoresist on wafers; A cavity door located on the side wall of the spin coating cavity is used to allow the transfer arm to pick up and deliver wafers through the cavity door; A gas convection device is installed at the cavity door away from the spin coating cavity. The gas convection device is activated when the cavity door is opened. The airflow formed by the gas convection device forms an airtight barrier at the cavity door to prevent organic vapor from escaping from the spin coating cavity.

2. The semiconductor process chamber according to claim 1, characterized in that, The gas convection device includes multiple nozzles for generating airflow.

3. The semiconductor process chamber according to claim 2, characterized in that, The nozzles are arranged in a linear array, with an orifice diameter ranging from 0.5 mm to 1.5 mm and a spacing between adjacent nozzles ranging from 3 mm to 8 mm.

4. The semiconductor process chamber according to claim 1, characterized in that, The gas convection device uses dry and clean air as its gas source.

5. The semiconductor process chamber according to claim 1, characterized in that, The gas convection device also includes a pressure regulating valve for adjusting the pressure of the gas flow to a preset range.

6. The semiconductor process chamber according to claim 5, characterized in that, The pressure range of the airflow generated by the gas convection device is 100 Pa to 500 Pa.

7. The semiconductor process chamber according to claim 1, characterized in that, The gas convection device also includes an airflow monitoring sensor for monitoring the pressure of the airflow.

8. The semiconductor process chamber according to claim 1, characterized in that, The gas pressure inside the spin coating cavity is greater than the pressure in the conveying area of ​​the conveying arm.

9. The semiconductor process chamber according to claim 1, characterized in that, The spin coating chamber is equipped with an exhaust unit for discharging organic vapors from the spin coating chamber.

10. A semiconductor device, characterized in that, Includes the semiconductor process chamber as described in any one of claims 1 to 9.

Images