Vibration sensor
By arranging components such as vibration units, active identification communication modules, central processing units, and power modules side by side on a circuit board, the problems of large size and assembly complexity caused by traditional stacked designs are solved, achieving miniaturization and improved stability of the sensor.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-27
- Publication Date
- 2026-03-06
AI Technical Summary
Traditional vibration sensors employ a stacked structure design, resulting in a large size that is not convenient for application in space-constrained scenarios and increases the difficulty and complexity of overall assembly.
The design adopts a side-by-side arrangement, placing key components such as the vibration unit, active identification communication module, central processing unit, and power module on the circuit board, reducing the need for stacking, simplifying the assembly process, and improving stability.
The overall size of the sensor has been significantly reduced, improving its applicability in compact spaces, reducing assembly difficulty and cost, and enhancing reliability and stability.
Smart Images
Figure CN223976739U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of detection equipment technology, and specifically relates to a vibration sensor. Background Technology
[0002] In the field of sensor technology, vibration sensors, as an important detection element, are widely used in various fields such as industrial equipment, machinery, and automobile manufacturing to monitor and diagnose the operating status of equipment. Vibration sensors sense the slight vibrations of objects and convert this vibration information into electrical signals, thereby enabling real-time monitoring and analysis of equipment status. However, traditional vibration sensors have some design shortcomings that limit their performance and efficiency in practical applications.
[0003] Specifically, traditional vibration sensors often employ a stacked structure design. While this design meets the basic functional requirements of the sensor to some extent, it brings many problems and challenges. First, the stacked design makes the overall sensor bulky, which is inconvenient for use in space-constrained environments, and it also increases the difficulty and complexity of assembling the entire device. Utility Model Content
[0004] The purpose of this invention is to address the shortcomings of existing technologies where traditional vibration sensors often employ a stacked structure design, resulting in a large overall sensor size and increasing the difficulty and complexity of assembly. The invention provides a vibration sensor design to solve these problems.
[0005] To achieve the above objectives, the present invention provides the following technical solution:
[0006] A vibration sensor includes a circuit board, a package shell, a vibration unit, an active identification communication module, a central processing unit, and a power supply module that supplies power to the entire vibration sensor; the package shell is disposed on the circuit board and together with the circuit board forms a package cavity; the vibration unit, the active identification communication module, the central processing unit, and the power supply module are all located inside the package cavity and are arranged side by side on the circuit board;
[0007] The vibration unit includes a vibrating ring, a diaphragm, a mass block, and a vibration detection circuit. The vibrating ring is mounted on a circuit board, the diaphragm is located on one side of the vibrating ring, and the mass block is mounted on the diaphragm. The vibrating ring, diaphragm, and circuit board together form a vibration cavity. The circuit board has an air passage connecting the vibration cavity and the vibration detection circuit. The vibration detection circuit and the active identification communication module are both electrically connected to the central processing unit.
[0008] Further improvements to this technical solution include a vibration detection circuit comprising a vibration detection chip U1, a resistor T1, a field-effect transistor Q1, a capacitor C1, a capacitor C2, a resistor R2, and a resistor R3.
[0009] The first end of resistor R1 and the gate of MOSFET Q1 are both connected to the central processing unit. The second end of resistor R1 and the source of MOSFET Q1 are both connected to a 3.3V power supply. The drain of MOSFET Q1 is connected to the power supply pin of vibration detection chip U1 and grounded through parallel capacitors C1 and C2. The chip select pin, serial clock pin, serial data pin, serial data output pin, and two interrupt pins of vibration detection chip U1 are all connected to the central processing unit. The serial clock pin of vibration detection chip U1 is grounded through resistor R2. The serial data pin of vibration detection chip U1 is connected to the drain of MOSFET Q1 through resistor R3.
[0010] Further improvements to this technical solution include the use of a three-axis MEMS accelerometer, model IIS3DWB, for the vibration detection chip U1.
[0011] Further improvements to this technical solution include an active identification module comprising an active identification chip U2 of model number NT35-PIN, and an active identification peripheral circuit connected to the active identification chip U2; the active identification chip U2 is electrically connected to the central processing unit.
[0012] A further improvement to this technical solution is that the central processing unit includes a central processing unit U3 and peripheral circuits connected to the central processing unit U3, the peripheral circuits including clock circuits and storage circuits.
[0013] Further improvements to this technical solution include the use of an STM32F37CCT6 microcontroller in the central processing unit U3.
[0014] Further improvements to this technical solution include a clock circuit comprising capacitor C3, crystal oscillator X1, capacitor C4, capacitor C5, resistor R4, crystal oscillator chip U4, and capacitor C6.
[0015] The first terminal of capacitor C3 and the first terminal of crystal oscillator X1 are both connected to the first pin of the microcontroller. The first terminal of capacitor C4 and the second terminal of crystal oscillator X1 are both connected to the second pin of the microcontroller. The second terminals of capacitor C3 and capacitor C4 are both grounded. The first terminal of capacitor C5, the first terminal of resistor R4, and the first pin of crystal oscillator chip U4 are all connected to the third pin of the microcontroller. The first terminal of capacitor C6, the second terminal of resistor R4, and the second pin of crystal oscillator chip U4 are all connected to the fourth pin of the microcontroller. The second terminals of capacitor C5, the second terminal of capacitor C6, and the third and fourth pins of crystal oscillator chip U4 are all grounded.
[0016] Further improvements to this technical solution include a storage circuit comprising a serial SRAM chip U5, a capacitor C7, a field-effect transistor Q2, and a resistor R5.
[0017] The first, second, third, and fourth pins of the serial SRAM chip U5 are all connected to the microcontroller. The fifth pin of the serial SRAM chip U5 is connected to the drain of the field-effect transistor Q2 and grounded through capacitor C7. The gate of the field-effect transistor Q2 and the first end of the resistor R5 are both connected to the microcontroller. The source of the field-effect transistor Q2 and the second end of the resistor R5 are both connected to the 3.3V power supply.
[0018] Further improvements to this technical solution include a power module comprising a power management chip U6, capacitors C8 and C9, resistor R6, MOSFET Q3, resistors R7, R8, R9, capacitor C10, a battery voltage converter U7, MOSFET Q4, resistors R10, R11, R12, R13, capacitors C11, C12, C13, C14, inductor L1, and a battery input interface P1.
[0019] The input pin of the power management chip U6 is connected to an external power supply and grounded through parallel capacitors C8 and C9. The input pin of the power management chip U6 is also connected to the source of the field-effect transistor Q3 and the first end of resistor R6. The second end of resistor R6 and the gate of the field-effect transistor Q3 are both connected to the microcontroller through resistor R7. The drain of the field-effect transistor Q3 is connected to the first end of resistor R9, the first end of capacitor C10 and the microcontroller through resistor R8. The second end of resistor R9 and the second end of capacitor C10 are both grounded.
[0020] The enable pin of the battery voltage converter U7 is connected to the drain of the MOSFET Q4 and the first end of the resistor R10. The second end of the resistor R10 is grounded. The source of the MOSFET Q4 and the first end of the resistor R11 are both connected to the external power supply. The second end of the resistor R11 and the gate of the MOSFET Q4 are both connected to the microcontroller. The feedback pin of the battery voltage converter U7 is connected to the first end of the resistor R12 and the first end of the resistor R13. The second end of the resistor R13 is grounded. The second end of the resistor R12 is connected to the output pin of the battery voltage converter U7, the first end of the capacitor C11, the first end of the capacitor C12, and the battery voltage output terminal. The second ends of the capacitors C11 and C12 are both grounded. The power pin of the battery voltage converter U7 is connected to the first end of the inductor L1, the first end of the capacitor C13, the first end of the capacitor C14, and the first end of the battery input interface P1. The second ends of the battery input interface P1, the second ends of the capacitors C13 and C14 are all grounded. The second end of the inductor L1 is connected to the switch pin of the battery voltage converter U7.
[0021] Further improvements to this technical solution include the use of the MH5333 power management chip for the power management chip U6 and the SMG66051-ADJ voltage conversion chip for the battery voltage converter U7.
[0022] The beneficial effects of this invention lie in its ability to significantly reduce the overall size of the sensor by arranging key components such as the vibration unit, active identification communication module, central processing unit, and power module side-by-side on a circuit board, rather than through traditional layered stacking. This design not only makes the sensor more compact and lightweight but also improves its applicability in various compact spaces. Layered designs often require complex assembly steps and precise positioning techniques to ensure accurate alignment and connection between layers. Our side-by-side design greatly simplifies the assembly process, reducing assembly difficulty and cost. The connections between components are more direct and simpler. Potential connection problems or gaps may exist between layers in a layered design, which could lead to performance degradation or malfunction of the sensor during long-term operation. The side-by-side design, by reducing interlayer connections and gaps, improves the overall reliability and stability of the sensor.
[0023] Furthermore, the design principle of this utility model is reliable, the structure is simple, and it has a very wide range of application prospects.
[0024] It is evident that this utility model has outstanding substantive features and significant progress compared with the prior art, and the beneficial effects of its implementation are also obvious. Attached Figure Description
[0025] To more clearly illustrate the technical solution of this utility model, the drawings used in the description will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0026] Figure 1 This is a schematic diagram of a vibration detection circuit.
[0027] Figure 2 This is the circuit schematic of the central processing unit U3.
[0028] Figure 3 This is the schematic diagram of a clock circuit.
[0029] Figure 4 This is a schematic diagram of the current storage principle.
[0030] Figure 5 This is the circuit schematic of the power module. Detailed Implementation
[0031] To make the objectives, features, and advantages of this utility model more apparent and understandable, the technical solutions of this utility model will be clearly and completely described below with reference to the accompanying drawings of the specific embodiments. Obviously, the embodiments described below are only some embodiments of this utility model, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0032] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
[0033] Traditional vibration sensors often employ a stacked structure design. While this design meets the basic functional requirements of the sensor to some extent, it also introduces numerous problems and challenges. First, the stacked design results in a large overall sensor size, making it inconvenient for applications in space-constrained environments, and also increases the difficulty and complexity of assembly. To address these issues, this invention provides a vibration sensor comprising a circuit board, a housing, a vibration unit, an active identification communication module, a central processing unit, and a power supply module for powering the entire vibration sensor. The housing is mounted on the circuit board, forming a cavity together with the circuit board. The vibration unit, active identification communication module, central processing unit, and power supply module are all located within the cavity and arranged side-by-side on the circuit board.
[0034] Specifically, the vibration unit includes a vibrating ring, a diaphragm, a mass block, and a vibration detection circuit. The vibrating ring is mounted on a circuit board, the diaphragm is located on one side of the vibrating ring, and the mass block is mounted on the diaphragm. The vibrating ring, diaphragm, and circuit board together form a vibration cavity. The circuit board is provided with an air passage connecting the vibration cavity and the vibration detection circuit. The vibration detection circuit and the active identification communication module are both electrically connected to the central processing unit.
[0035] The vibrating ring is made of a rigid material (such as metal or polymer composite material) and is fixed to the circuit board by welding or bonding. Its ring structure surrounds the central area of the vibration cavity, constraining the vibration range of the diaphragm and providing mechanical support. The inner diameter of the vibrating ring matches the size of the diaphragm, ensuring that the vibration energy is concentrated and transferred to the diaphragm.
[0036] The diaphragm is made of flexible piezoelectric material (such as PVDF or piezoelectric ceramic) with a thickness of 0.1-0.3 mm. The edges of the diaphragm are tightly fitted to the inner wall of the vibrating ring, while the central area is suspended, forming a thin-film structure that can vibrate freely. When external vibrations are transmitted to the diaphragm, the diaphragm deforms, causing the mass block to shift. The diaphragm is located on one side of the vibrating ring, with its edges tightly fitted to the ring, forming a sealed structure to ensure the airtightness of the vibration chamber.
[0037] The mass block, made of high-density metal (such as tungsten alloy), is fixed to the center of the diaphragm using adhesive. Its function is to amplify the diaphragm's displacement through inertia, thereby improving the detection sensitivity of the vibration signal. The weight of the mass block is designed according to the sensor's measurement range requirements, typically ranging from 0.5 to 2g.
[0038] The vibration chamber is a closed cavity formed by the vibrating ring, diaphragm, and circuit board. The dimensions of the vibration chamber are determined through simulation optimization to ensure the linear transmission of changes in internal airflow. The chamber height is 1-2mm to avoid signal attenuation due to excessive airflow damping.
[0039] The circuit board features an L-shaped air passage with a width of micrometers, connecting the vibration chamber to the vibration detection circuit. The air passage is processed using laser etching, resulting in a smooth inner wall to reduce airflow resistance. When the diaphragm vibrates, the gas inside the vibration chamber flows through the air passage, generating a pressure change signal.
[0040] The air pressure change signal is transmitted through the airway to the vibration detection circuit in the vibration detection circuit. The vibration detection circuit converts the air pressure change into an electrical signal and transmits it to the central processing unit.
[0041] When an external object vibrates, the vibration is transmitted through the circuit board to the vibrating ring, which in turn drives the diaphragm and mass block to vibrate together. Due to the inertia of the mass block, the diaphragm deforms, thereby changing the air pressure inside the vibration chamber. This change in air pressure is transmitted through the air passage to the sensor chip in the vibration detection circuit, which converts the air pressure change into an electrical signal. This electrical signal is then processed by a signal conditioning circuit and an analog-to-digital converter circuit (both existing technologies, not described in detail here) before being converted into a digital signal and transmitted to the central processing unit. The combination of the vibrating ring, diaphragm, and mass block forms a highly efficient vibration sensing system. The side-by-side arrangement of these components on the circuit board reduces mutual interference and influence, improving product stability. Simultaneously, the encapsulation shell provides excellent protection for the internal components, preventing damage from external dust, moisture, and other factors, thus extending the product's lifespan.
[0042] like Figure 1As shown, the vibration detection circuit includes a vibration detection chip U1, resistor T1, field-effect transistor Q1, capacitors C1 and C2, resistors R2 and R3. The first terminal of resistor R1 and the gate of field-effect transistor Q1 are both connected to the central processing unit (CPU). The second terminal of resistor R1 and the source of field-effect transistor Q1 are both connected to a 3.3V power supply. The drain of field-effect transistor Q1 is connected to the power supply pin of vibration detection chip U1 and grounded through parallel capacitors C1 and C2. The chip select pin, serial clock pin, serial data pin, serial data output pin, and two interrupt pins of vibration detection chip U1 are all connected to the CPU. The serial clock pin of vibration detection chip U1 is grounded through resistor R2, and the serial data pin of vibration detection chip U1 is connected to the drain of field-effect transistor Q1 through resistor R3. The vibration detection chip U1 is a triaxial MEMS accelerometer of model IIS3DWB.
[0043] Specifically, the IIS3DWB triaxial MEMS (Micro-Electro-Mechanical Systems) accelerometer is used as the vibration detection chip U1, supporting triaxial (X / Y / Z) vibration signal detection with a range of ±16g and a resolution of 0.5mg / LSB. It features a built-in digital low-pass filter with a configurable cutoff frequency (10Hz-5kHz) to adapt to different application scenarios. It communicates with the central processing unit via an SPI (Serial Peripheral Interface) interface and supports interrupt-triggered mode.
[0044] This invention provides a stable 3.3V power supply to the IIS3DWB chip through a power supply circuit consisting of a field-effect transistor Q1, a resistor R1, and capacitors C1 and C2. The field-effect transistor Q1 acts as a switch and regulates the current. The resistor R1 prevents damage to the field-effect transistor due to excessive gate voltage. Capacitors C1 and C2, connected in parallel, form a filter circuit that effectively removes noise and ripple from the power supply, ensuring the chip operates in a stable power environment and improving the accuracy and stability of vibration detection.
[0045] To facilitate improved communication security of the vibration sensor, an active identification module is installed within the vibration sensor. Specifically, the active identification module includes an active identification chip U2 with model number NT35-PIN, and an active identification peripheral circuit connected to the active identification chip U2; the active identification chip U2 is electrically connected to the central processing unit.
[0046] like Figure 2 , Figure 3 and Figure 4As shown, the central processing unit includes a central processing unit (CPU) U3 and peripheral circuitry connected to the CPU U3. The peripheral circuitry includes clock circuitry and memory circuitry. The CPU U3 uses an STM32F37CCT6 microcontroller.
[0047] Specifically, the clock circuit includes capacitor C3, crystal X1, capacitors C4 and C5, resistor R4, crystal chip U4, and capacitor C6. The first terminal of capacitor C3 and the first terminal of crystal X1 are both connected to the first pin of the microcontroller; the first terminal of capacitor C4 and the second terminal of crystal X1 are both connected to the second pin of the microcontroller; and the second terminals of capacitors C3 and C4 are both grounded. The first terminal of capacitor C5, the first terminal of resistor R4, and the first pin of crystal chip U4 are all connected to the third pin of the microcontroller; the first terminal of capacitor C6, the second terminal of resistor R4, and the second pin of crystal chip U4 are all connected to the fourth pin of the microcontroller; and the second terminals of capacitors C5, C6, and the third and fourth pins of crystal chip U4 are all grounded. Capacitors C3 and C4, together with crystal X1, form an oscillation circuit. Adjusting the capacitance values allows for fine-tuning of the crystal's oscillation frequency, while also stabilizing the oscillation and reducing the impact of external interference on the crystal frequency. Crystal X1 generates a precise clock signal and is the core component of the entire clock circuit, providing the microcontroller with a time reference. Capacitors C5 and C6 filter the input and output signals of crystal oscillator chip U4, removing high-frequency noise and interference to ensure signal stability and purity. Resistor R4 provides a suitable bias voltage for crystal oscillator chip U4, ensuring it operates at the appropriate operating point and guaranteeing its normal signal processing functions. Crystal oscillator chip U4 further processes the clock signal generated by crystal oscillator X1, such as frequency division and multiplication, to meet the different operating frequency requirements of the microcontroller. Capacitor C6, auxiliary to capacitor C5, filters and stabilizes the signal from crystal oscillator chip U4, working together with capacitor C5 to improve signal quality.
[0048] Furthermore, the storage circuit includes a serial SRAM chip U5, capacitor C7, field-effect transistor Q2, and resistor R5. Pins 1, 2, 3, and 4 of the serial SRAM chip U5 are all connected to the microcontroller. Pin 5 of the serial SRAM chip U5 is connected to the drain of the field-effect transistor Q2 and grounded through capacitor C7. The gate of the field-effect transistor Q2 and the first terminal of resistor R5 are both connected to the microcontroller, while the source of the field-effect transistor Q2 and the second terminal of resistor R5 are both connected to a 3.3V power supply. The serial SRAM chip U5 is a VT1706AMSME model. As the core of the storage circuit, the serial SRAM chip U5 (VT1706AMSME) is responsible for storing the data processed and saved by the microcontroller. Capacitor C7 filters the power supply to chip U5, removing high-frequency interference and making the power supply more stable. This helps reduce the impact of power fluctuations on chip operation, improves chip stability, and ensures that data storage and retrieval processes are not affected by power supply noise. The field-effect transistor Q2 acts as a power switch, controlled by the microcontroller. When the microcontroller sends a high-level signal, the field-effect transistor Q2 conducts, supplying power to chip U5 with 3.3V. When the microcontroller sends a low-level signal, the field-effect transistor Q2 is turned off, cutting off the power supply to chip U5, thus achieving flexible power management. Resistor R5 limits the current flowing into the gate of the field-effect transistor Q2, preventing excessive current from damaging the field-effect transistor and the microcontroller's GPIO (General-Purpose Input / Output) pins. It plays a protective role in the circuit, ensuring circuit safety and reliability, and extending component lifespan.
[0049] like Figure 5As shown, the power module includes a power management chip U6, capacitors C8 and C9, resistor R6, MOSFET Q3, resistors R7, R8, R9, capacitor C10, a battery voltage converter U7, MOSFET Q4, resistors R10, R11, R12, R13, capacitors C11, C12, C13, C14, inductor L1, and battery input interface P1. The input pin of the power management chip U6 is connected to an external power supply and grounded through parallel capacitors C8 and C9. The input pin of the power management chip U6 is also connected to the source of MOSFET Q3 and the first terminal of resistor R6. The second terminal of resistor R6 and the gate of MOSFET Q3 are both connected to the microcontroller through resistor R7. The drain of MOSFET Q3 is connected to the first terminal of resistor R9, the first terminal of capacitor C10, and the microcontroller through resistor R8. The second terminals of resistor R9 and capacitor C10 are both grounded. The enable pin of the battery voltage converter U7 is connected to the MOSFET. The drain of Q4 is connected to the first terminal of resistor R10, and the second terminal of resistor R10 is grounded. The source of MOSFET Q4 and the first terminal of resistor R11 are both connected to an external power supply. The second terminal of resistor R11 and the gate of MOSFET Q4 are both connected to the microcontroller. The feedback pin of battery voltage converter U7 is connected to the first terminals of resistor R12 and R13. The second terminal of resistor R13 is grounded. The second terminal of resistor R12 is connected to the output pin of battery voltage converter U7, the first terminal of capacitor C11, the first terminal of capacitor C12, and the battery voltage output terminal. The second terminals of capacitor C11 and C12 are both grounded. The power supply pin of battery voltage converter U7 is connected to the first terminal of inductor L1, the first terminal of capacitor C13, the first terminal of capacitor C14, and the first terminal of battery input interface P1. The second terminals of battery input interface P1, capacitor C13, and C14 are all grounded. The second terminal of inductor L1 is connected to the switch pin of battery voltage converter U7. Among them, the power management chip U6 uses the MH5333 power management chip; the battery voltage converter U7 uses the SMG66051-ADJ voltage conversion chip.
[0050] Specifically, the core function of the power management chip U6 (MH5333) is to convert, regulate, and manage external power, providing the system with multiple stable power outputs to meet the power supply needs of different circuit modules. It also has protection functions to prevent damage to the sensor caused by abnormal power supply. The battery voltage converter U7 (SMG66051-ADJ) converts the battery voltage into the stable voltage required by the sensor. Through feedback circuitry, it precisely adjusts the output voltage to ensure stability under different battery charge and load conditions. Capacitors C8 and C9 filter out low-frequency noise from the external power input, smoothing the power supply voltage and reducing the impact of voltage fluctuations on the power management chip U6, ensuring stable chip operation. Capacitor C10 performs high-frequency filtering on the signal output from the MOSFET Q3, removing high-frequency noise and preventing it from interfering with the microcontroller and subsequent circuits. Capacitors C11 and C12 filter out high-frequency noise in the output voltage of the battery voltage converter U7, ensuring a clean and stable voltage output to the system and guaranteeing the normal operation of other circuit components. Capacitors C13 and C14 filter the power supply of the battery voltage converter U7, removing noise from the power lines and providing a stable power supply for the chip, ensuring stable operation. Resistors R6 and R7 adjust the current flowing into the gate of the MOSFET Q3, enabling precise control of Q3 by the microcontroller and protecting the microcontroller's I / O ports from excessive current surges. Resistor R8 limits current and matches the signal, adjusting the signal output from Q3 to a range suitable for the microcontroller's reception. Resistor R9, in conjunction with capacitor C10, performs voltage division and filtering on the signal output from Q3, further removing noise and ensuring a stable and reliable signal input to the microcontroller. Resistor R10 provides a pull-down resistor for the drain of MOSFET Q4, ensuring that Q4 is in the off state when there is no control signal. Resistors R11 and R10 work together to regulate the current flowing into the gate of MOSFET Q4, enabling the microcontroller to control MOSFET Q4. R12 and R13 form a voltage divider circuit for the feedback circuit of the battery voltage converter U7, allowing precise adjustment of the output voltage by adjusting the voltage division ratio. MOSFETs Q3 and Q4 act as electronic switches. MOSFET Q3 controls the signal transmission and power on / off between the power management chip U6 and the microcontroller; MOSFET Q4 controls the enable pin of the battery voltage converter U7, enabling the microcontroller to turn the battery voltage conversion function on and off. Inductor L1 stores and releases energy during battery voltage conversion, working in conjunction with the internal circuitry of the battery voltage converter U7 to maintain stable output voltage and reduce voltage ripple. Battery interface P1 provides a physical connection interface for the battery, ensuring a stable and reliable electrical connection between the battery and the power module, enabling the battery to power the system.
[0051] The vibration sensor works as follows: the vibrating ring of the vibration unit is fixed on the circuit board, the diaphragm is located on one side of the vibrating ring, and the mass block is placed on the diaphragm, together with the circuit board forming a vibration cavity. When external vibration occurs, the vibration is transmitted to the vibrating ring, causing the diaphragm and mass block to vibrate, changing the air pressure inside the vibration cavity. The air pressure change is conducted to the vibration detection circuit through the air passage on the circuit board. The vibration detection chip U1 (IIS3DWB triaxial MEMS accelerometer) in the vibration detection circuit senses the air pressure change, converts it into an electrical signal, and transmits it to the central processing unit U3 to realize vibration detection.
[0052] The above description of the disclosed embodiments enables those skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A vibration sensor, characterized by The vibration sensor comprises a circuit board, a packaging shell, a vibration unit, an active identification communication module, a central processing unit and a power module for supplying power to the whole vibration sensor; the packaging shell is arranged on the circuit board and cooperates with the circuit board to form a packaging cavity; the vibration unit, the active identification communication module, the central processing unit and the power module are located in the packaging cavity and are arranged side by side on the circuit board. The vibration unit comprises a vibration ring, a vibration diaphragm, a mass block and a vibration detection circuit, the vibration ring is arranged on the circuit board, the vibration diaphragm is located on one side of the vibration ring, and the mass block is arranged on the vibration diaphragm; the vibration ring, the vibration diaphragm and the circuit board cooperatively form a vibration cavity; the circuit board is provided with an air channel which is in communication with the vibration cavity and the vibration detection circuit; the vibration detection circuit and the active identification communication module are electrically connected to the central processing unit.
2. The vibratory sensor of claim 1, wherein, The vibration detection circuit comprises a vibration detection chip U1, a resistor T1, a field effect transistor Q1, a capacitor C1, a capacitor C2, a resistor R2 and a resistor R3. The first end of the resistor R1 and the gate of the field effect transistor Q1 are both connected to the central processing unit; the second end of the resistor R1 and the source of the field effect transistor Q1 are both connected to a 3.3V power supply; the drain of the field effect transistor Q1 is connected to the power supply pin of the vibration detection chip U1 and grounded through the capacitor C1 and the capacitor C2 in parallel; the chip select pin, the serial clock pin, the serial data pin, the serial data output pin and the two interrupt pins of the vibration detection chip U1 are all connected to the central processing unit; the serial clock pin of the vibration detection chip U1 is grounded through the resistor R2; the serial data pin of the vibration detection chip U1 is connected to the drain of the field effect transistor Q1 through the resistor R3.
3. The vibratory sensor of claim 2, wherein, The vibration detection chip U1 is a three-axis MEMS accelerometer with the model IIS3DWB.
4. The vibratory sensor of claim 1, wherein, The active identification module comprises an active identification chip U2 with the model NT35-PIN and an active identification peripheral circuit connected to the active identification chip U2; the active identification chip U2 is electrically connected to the central processing unit.
5. The vibratory sensor of claim 1, wherein, The central processing unit comprises a central processor U3 and a peripheral circuit connected to the central processor U3; the peripheral circuit comprises a clock circuit and a storage circuit.
6. The vibratory sensor of claim 5, wherein, The central processor U3 is a single-chip microcomputer with the model STM32F37CCT6.
7. The vibratory sensor of claim 6, wherein, The clock circuit comprises a capacitor C3, a crystal oscillator X1, a capacitor C4, a capacitor C5, a resistor R4, a crystal chip U4 and a capacitor C6; The first end of the capacitor C3 and the first end of the crystal oscillator X1 are both connected to the first pin of the single-chip microcomputer; the first end of the capacitor C4 and the second end of the crystal oscillator X1 are both connected to the second pin of the single-chip microcomputer; the second end of the capacitor C3 and the second end of the capacitor C4 are both grounded; the first end of the capacitor C5, the first end of the resistor R4 and the first pin of the crystal chip U4 are all connected to the third pin of the single-chip microcomputer; the first end of the capacitor C6, the second end of the resistor R4 and the second pin of the crystal chip U4 are all connected to the fourth pin of the single-chip microcomputer; the second end of the capacitor C5, the second end of the capacitor C6 and the third pin and the fourth pin of the crystal chip U4 are all grounded.
8. The vibratory sensor of claim 6, wherein, The storage circuit comprises a serial SRAM chip U5, a capacitor C7, a field effect transistor Q2 and a resistor R5. The first pin, the second pin, the third pin and the fourth pin of the serial SRAM chip U5 are connected to the single-chip microcomputer, the fifth pin of the serial SRAM chip U5 is connected to the drain of the field effect tube Q2 and grounded through the capacitor C7, the gate of the field effect tube Q2 and the first end of the resistor R5 are both connected to the single-chip microcomputer, and the source of the field effect tube Q2 and the second end of the resistor R5 are both connected to the 3.3V power supply.
9. The vibratory sensor of claim 6, wherein, The power supply module comprises a power management chip U6, a capacitor C8, a capacitor C9, a resistor R6, a field effect tube Q3, a resistor R7, a resistor R8, a resistor R9, a capacitor C10, a battery voltage converter U7, a field effect tube Q4, a resistor R10, a resistor R11, a resistor R12, a resistor R13, a capacitor C11, a capacitor C12, a capacitor C13, a capacitor C14, an inductor L1 and a battery access interface P1; The input pin of the power management chip U6 is connected to the external power supply and grounded through the parallel capacitor C8 and capacitor C9, the input pin of the power management chip U6 is also connected to the source of the field effect tube Q3 and the first end of the resistor R6, the second end of the resistor R6 and the gate of the field effect tube Q3 are both connected to the single-chip microcomputer through the resistor R7, and the drain of the field effect tube Q3 is connected to the first end of the resistor R9, the first end of the capacitor C10 and the single-chip microcomputer through the resistor R8, and the second end of the resistor R9 and the second end of the capacitor C10 are both grounded; The enable pin of the battery voltage converter U7 is connected to the drain of the field effect tube Q4 and the first end of the resistor R10, the second end of the resistor R10 is grounded, the source of the field effect tube Q4 and the first end of the resistor R11 are both connected to the external power supply, the second end of the resistor R11 and the gate of the field effect tube Q4 are both connected to the single-chip microcomputer, the feedback pin of the battery voltage converter U7 is connected to the first end of the resistor R12 and the first end of the resistor R13, the second end of the resistor R13 is grounded, the second end of the resistor R12 is connected to the output pin of the battery voltage converter U7, the first end of the capacitor C11, the first end of the capacitor C12 and the battery voltage output end, and the second end of the capacitor C11 and the second end of the capacitor C12 are both grounded, the power supply pin of the battery voltage converter U7 is connected to the first end of the inductor L1, the first end of the capacitor C13, the first end of the capacitor C14 and the first end of the battery input interface P1, the second end of the battery input interface P1, the second end of the capacitor C13 and the second end of the capacitor C14 are all grounded, and the second end of the inductor L1 is connected to the switch pin of the battery voltage converter U7.
10. The vibratory sensor of claim 9, wherein, The power management chip U6 adopts a power management chip with a model number of MH5333, and the battery voltage converter U7 adopts a voltage conversion chip with a model number of SMG66051-ADJ.