Reflecting mirror applied to high-power laser

By using a quartz substrate and alternating high and low refractive index film structures on the reflector, a high-power laser reflector was manufactured, solving the problems of reflectivity and absorptivity under high-power lasers and achieving efficient energy utilization and stability.

CN223977365UActive Publication Date: 2026-03-06SHANGHAI GAONENG YU PLATING TECH CO LTD
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Patent Information

Application Number
CN202520569161.6
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-03-28
Publication Date
2026-03-06
Estimated Expiration
2035-03-28

AI Technical Summary

Technical Problem

Existing technologies make it difficult to manufacture a mirror that has high reflectivity, low absorptivity, and stability under high-power laser conditions.

Method used

A reflective dielectric film, consisting of a quartz substrate structure and 46 alternating layers of high and low refractive index films, including tantalum pentoxide and silicon dioxide films, is used to manufacture a reflector.

Benefits of technology

Achieving high reflectivity and extremely low absorption under high-power lasers reduces energy loss and improves the efficiency and stability of laser systems.

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Abstract

The utility model discloses a reflecting mirror applied to high-power laser, which comprises a base material structure layer, a reflecting dielectric film structure layer is arranged on the reflecting surface of the base material structure layer in a film coating mode, and the reflecting dielectric film structure layer is composed of 46 layers of high-refractive-index film structures and 46 layers of low-refractive-index film structures which are alternately overlapped from inside to outside. The reflector applied to the high-power laser can obtain high reflectivity in the application scene of the high-power laser under the working wave band of 915 + / -10nm, 976 + / -10nm or 1064 + / -10nm. Meanwhile, the dielectric film of the reflector is extremely low in laser absorptivity, and energy loss can be effectively reduced.
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Description

Technical Field

[0001] This utility model relates to the field of laser reflector manufacturing, and specifically to a reflector used in high-power lasers. Background Technology

[0002] A laser reflector is an extremely important optical component, whose main function is to reflect laser beams. This type of reflector possesses many excellent properties, among which high reflectivity is one of its most notable characteristics.

[0003] It can reflect most of the laser energy back, greatly reducing energy loss. This characteristic is a crucial basic condition in many laser application scenarios.

[0004] Meanwhile, laser reflectors also have the advantage of low absorption rate. This means that during the process of reflecting laser light, they absorb very little laser energy themselves, thus ensuring that the laser energy can be reflected and utilized in the intended way, further improving the efficiency and stability of the laser system.

[0005] Excellent surface quality is also an indispensable attribute of laser mirrors. Their surfaces are extremely smooth and flat, with virtually no minute imperfections or undulations, which helps to precisely guide, focus, or adjust the direction of the laser beam. Whether in laser cutting, precisely guiding the laser beam along a preset path to cut material; in laser communication, focusing the laser signal to ensure accurate signal transmission; or in applications requiring extremely high precision, such as laser measurement, laser mirrors can perform exceptionally well thanks to these characteristics.

[0006] The ability to manufacture a reflector for use with high-power lasers has become even more important. Utility Model Content

[0007] In order to overcome the above-mentioned defects of the prior art, the purpose of this utility model is to provide a reflector for use in high-power lasers.

[0008] A reflector used in high-power lasers, including

[0009] A substrate structure layer, wherein a reflective dielectric film structure layer is deposited on the reflective surface of the substrate structure layer by means of a coating.

[0010] The reflective medium film structure consists of 46 layers of alternating high-refractive-index and low-refractive-index film structures stacked from the inside out.

[0011] The specific reflective medium film structure layer is as follows:

[0012] Substrate structural layer / 118.36nmH / 169.82nmmL / 130.5nmH / 176.87nmmL / 121.99nmH /

[0013] 180.14nmL / 104.47nmH / 147.64nmL / 94.67nmH / 157.08nmL / 116.21nmH / 184.5 3nmL / 121.54nmH / 186.43nmL / 124.04nmH / 185.67nmL / 125.22nmH / 185.27nmL /

[0014] 125.51nmH / 185.59nmL / 125.42nmH / 185.99nmL / 125.37nmH / 186.2nmL / 125.47nmH / 186.1nmL / 125.76nmH / 185.78nmL / 126.33nmH / 185.13nmL / 127.37nmH / 184.66nmL / 128.79nmH / 191nmL / 127.5nmH / 228.29nmL / 148.23nmH / 233.49nmL /

[0015] 135.13nmH / 212.98nmmL / 120.98nmH / 183.9nmmL / 144.42nmH / 150.21nmmL / 131.22nmH / 150nmmL / air;

[0016] Where H represents a high refractive index film structure, L represents a low refractive index film structure, and the nanometers before H and L represent the thickness of the corresponding film structure.

[0017] In a preferred embodiment of this utility model, the high refractive index film structure is a film structure made of tantalum pentoxide (TA2O5).

[0018] In a preferred embodiment of this utility model, the low refractive index film structure is a film structure made of silicon dioxide (SiO2).

[0019] In a preferred embodiment of this utility model, the substrate structure layer is a quartz base structure.

[0020] In a preferred embodiment of this utility model, the quartz material is Herlix SUP-313.

[0021] In a preferred embodiment of this utility model, the working wavelength of the reflector is 915±10nm, 976±10nm or 1064±10nm.

[0022] The beneficial effects of this utility model are as follows:

[0023] The reflector of this invention, applicable to high-power lasers, achieves high reflectivity in high-power laser applications at operating wavelengths of 915±10nm, 976±10nm, or 1064±10nm. Simultaneously, the dielectric film of this reflector exhibits extremely low laser absorption, effectively reducing energy loss. Attached Figure Description

[0024] Figure 1 This is a schematic diagram of the structure of this utility model.

[0025] Figure 2 This is a schematic diagram illustrating the effects of an embodiment of the present utility model. Figure 1 . Detailed Implementation

[0026] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. However, it should be understood that the specific embodiments described herein are merely illustrative of the present utility model and are not intended to limit its scope. Furthermore, in the following descriptions, well-known structures and technologies have been omitted to avoid unnecessary confusion regarding the concept of this utility model.

[0027] In the description of this utility model, it should be noted that the terms "upper," "lower," "inner," "outer," "top / bottom," etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description. They do not indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.

[0028] like Figure 1 The mirror shown is used for high-power lasers and includes a substrate structure layer 100, which is a quartz base structure.

[0029] In the embodiments of this utility model, Herlix SUP-313 is used. The reason for choosing this material is that Herlix SUP-313 is a quartz-based material suitable for high-energy lasers.

[0030] It possesses numerous excellent properties, such as a low coefficient of thermal expansion, which minimizes dimensional changes with temperature variations, thus ensuring stability under high-energy laser conditions; low impurity content, which helps reduce adverse effects such as laser scattering and improves laser utilization efficiency; and excellent heat resistance, moisture resistance, and chemical stability. Its heat resistance allows it to withstand the high-temperature environment generated by high-energy lasers without performance degradation, its moisture resistance ensures normal operation in humid environments, and its chemical stability ensures it will not corrode or decompose under various chemical conditions, thereby enabling it to play a stable and important role in high-energy laser-related applications.

[0031] A reflective medium film structure layer 200 is provided on the reflective surface of the substrate structure layer 100 by means of coating.

[0032] The reflective dielectric film structure layer 200 consists of 46 layers of alternating high-refractive-index and low-refractive-index film structures stacked from the inside out. The specific reflective dielectric film structure layer in the embodiments of this invention is as follows:

[0033] Substrate structural layer / 118.36nmH / 169.82nmmL / 130.5nmH / 176.87nmmL / 121.99nmH /

[0034] 180.14nmL / 104.47nmH / 147.64nmL / 94.67nmH / 157.08nmL / 116.21nmH / 184.5 3nmL / 121.54nmH / 186.43nmL / 124.04nmH / 185.67nmL / 125.22nmH / 185.27nmL /

[0035] 125.51nmH / 185.59nmL / 125.42nmH / 185.99nmL / 125.37nmH / 186.2nmL / 125.47nmH / 186.1nmL / 125.76nmH / 185.78nmL / 126.33nmH / 185.13nmL / 127.37nmH / 184.66nmL / 128.79nmH / 191nmL / 127.5nmH / 228.29nmL / 148.23nmH / 233.49nmL /

[0036] 135.13nmH / 212.98nmmL / 120.98nmH / 183.9nmmL / 144.42nmH / 150.21nmmL / 131.22nmH / 150nmmL / air.

[0037] In this context, H represents a high-refractive-index film structure, and L represents a low-refractive-index film structure. The nanometers preceding H and L indicate the thickness of the corresponding film structure. The high-refractive-index film structure is made of tantalum pentoxide (TA2O5). The low-refractive-index film structure is made of silicon dioxide (SiO2). The terms "high" and "low" in high-refractive-index and low-refractive-index film structures are relative.

[0038] The dielectric film of the reflector of this invention achieves high reflectivity by utilizing the interference effect of light. For example, the reflector operates at wavelengths of 915±10nm, 976±10nm, or 1064±10nm, and different optimizations are performed at these three different operating wavelengths. Specifically... Figure 2 As shown.

[0039] The dielectric film of the reflector of this invention has a high damage threshold of ≥15 J / cm. 2 It meets the conditions required to withstand high-power lasers of 6000 watts and above, thus avoiding damage to the film layer.

[0040] The high-power laser of this invention is a high-power laser of 5000 watts or above.

[0041] The dielectric film of the reflector of this invention has an extremely low absorptivity, specifically ≤15ppm.

[0042] The dielectric film of the reflector of this invention has an extremely low absorption rate for laser light.

[0043] This low absorption rate means that only a very small amount of laser energy is absorbed by the dielectric film during the interaction between the laser and the mirror, which can effectively reduce energy loss and greatly improve the energy utilization efficiency of the laser system.

[0044] The above shows and describes the basic principles, main features, and advantages of this utility model.

[0045] Those skilled in the art should understand that this utility model is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of this utility model. Various changes and modifications can be made to this utility model without departing from its spirit and scope. All such changes and modifications fall within the scope of this utility model as defined by the appended claims and their equivalents.

Claims

1. A mirror for use with high power lasers, characterized in that, comprising a substrate structure layer, a reflective medium film structure layer is arranged on the reflective surface of the substrate structure layer by plating, the reflective medium film structure layer is 46 layers of high refractive index film structure and low refractive index film structure alternately stacked from inside to outside; the reflective medium film structure layer is specifically as follows: substrate structure layer / 118.36nmH / 169.82nmL / 130.5nmH / 176.87nmL / 121.99nmH / 180.14nmL / 104.47nmH / 147.64nmL / 94.67nmH / 157.08nmL / 116.21nmH / 184.53nmL / 121.54nmH / 186.43nmL / 124.04nmH / 185.67nmL / 125.22nmH / 185.27nmL / 125.51nmH / 185.59nmL / 125.42nmH / 185.99nmL / 125.37nmH / 186.2nmL / 125.47nmH / 186.1nmL / 125.76nmH / 185.78nmL / 126.33nmH / 185.13nmL / 127.37nmH / 184.66nmL / 128.79nmH / 191nmL / 127.5nmH / 228.29nmL / 148.23nmH / 233.49nmL / 135.13nmH / 212.98nmL / 120.98nmH / 183.9nmL / 144.42nmH150.21nmL / 131.22nmH / 150nmL / air; wherein, H represents a high refractive index film structure, L represents a low refractive index film structure, and the nanometer number before H and L is the thickness of the corresponding film structure. The high refractive index film structure is a film structure of tantalum pentoxide TA2O5 material. The low refractive index film structure is a film structure of silicon dioxide SIO2 material. The substrate structure layer is a substrate structure of quartz material.

2. A mirror for high power laser as recited in claim 1, wherein, 5. The mirror for high-power laser of claim 4, wherein 3. A mirror for high power laser as recited in claim 1, wherein, The quartz material is SUP-313 of Helios.

4. A mirror for high power laser as recited in claim 1, wherein, 6. The mirror for high-power laser of claim 1, wherein The working waveband of the mirror is 915±10nm, 976±10nm or 1064±10nm. ​ ​ ​

Citation Information

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