Photovoltaic cell and photovoltaic module

Abstract

The utility model discloses a photovoltaic cell and a photovoltaic module, and belongs to the field of solar cells. The photovoltaic cell has a first direction and a second direction, the first direction and the second direction intersect, the photovoltaic cell comprises a first face, the first face is provided with a first side edge, the first side edge extends in the second direction, at least part of the edge of the first face is provided with an insulation area, and the insulation area extends in the second direction; the first surface is provided with an edge main grid, and the edge main grid extends along a second direction; at least part of the insulation region and the edge main grid are provided with a first gap in the first direction, a plurality of fine grids are arranged on the first surface, at least part of the fine grids intersect with the edge main grid and extend into the first gap, the fine grids located in the first gap are first protruding fine grids, the length of the first protruding fine grids is larger than zero and smaller than or equal to l1, and l1 is the length value of the first gap.

Description

[0001] This application claims priority to Chinese Patent Application No. 2024205493080, filed on March 20, 2024, entitled "Photovoltaic Cells and Photovoltaic Modules", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application belongs to the field of solar cells, specifically relating to a photovoltaic cell and a photovoltaic module. Background Technology

[0003] With the development of technology, photovoltaic (PV) modules are being used more and more widely. By installing PV modules on rooftops or outdoors, they convert solar energy into electrical energy, thus generating electricity and achieving clean power generation, avoiding environmental pollution. Typically, a PV module includes a PV cell with an insulating region at its edge. A main grid is located on the surface of the PV cell, close to the insulating region with a gap between them. Fine grids also extend from the PV cell surface into the gap, forming protruding fine grids. These protruding fine grids can collect charge carriers, reducing energy loss at the PV cell's edge. However, in related technologies, the ability of these protruding fine grids to reduce energy loss at the PV cell's edge is relatively limited. Utility Model Content

[0004] The purpose of this application is to provide a photovoltaic cell and a photovoltaic module that at least solves the problem that the protruding fine grids on the photovoltaic cell have a limited ability to reduce the energy loss at the edge of the photovoltaic cell.

[0005] In a first aspect, embodiments of this application provide a photovoltaic cell having a first direction and a second direction intersecting each other. The photovoltaic cell includes a first surface having a first side edge extending along the second direction. At least a portion of the edge of the first surface is provided with an insulating region extending along the second direction. An edge main grid is provided on the first surface extending along the second direction.

[0006] At least a portion of the insulating region and the edge main grid have a first gap in the first direction. A plurality of fine grids are disposed on the first surface, and at least a portion of the fine grids intersects with the edge main grid and extends into the first gap. The fine grid located in the first gap is a first protruding fine grid, and the length of the first protruding fine grid is greater than zero and less than or equal to... ,in, The length of the first gap is given.

[0007] Optionally, the edge main gate includes a first main gate segment and a second main gate segment. The first main gate segment and the second main gate segment each have a long side and a short side along a second direction. The short side of the first main gate segment is connected to the short side of the adjacent second main gate segment, and the long side of the first main gate segment is connected to the long side of the adjacent second main gate segment. The first main gate segment and the adjacent second main gate segment are graphically symmetrical about the short side or the long side.

[0008] ; This indicates the distance from the centerline of the edge main grid to the first side. This indicates the extension length of the insulating region. This indicates the length of the shorter side. This represents the distance between the longer side and the immediately adjacent shorter side. The angle between the line connecting the endpoint of the short side near the insulating region and the endpoint of the adjacent long side near the insulating region, and the centerline of the edge main gate, wherein the centerline of the edge main gate is the line connecting the center of the long side and the center of the short side. This represents the distance between the first protruding fine grid and the adjacent long side.

[0009] Optionally, the length of the first protruding fine grid is greater than or equal to the length of the... Half of, and less than or equal to the stated .

[0010] Optionally, the The ratio of the length value to the width value of the insulation area is greater than 1.5.

[0011] Optionally, the first protruding fine grid is disposed in close contact with the insulating region, and the length of the first protruding fine grid is equal to... .

[0012] Optionally, the w 中心线 It is 0.52 mm, the It is 0 millimeters, the It is 0.03 mm, the The value is 5.7 mm, and the range of y is 1-5.7 mm. The degree is 0 degrees, and the length of the first protruding fine grid is 0.505 mm.

[0013] Optionally, the first surface has a chamfered edge connected to the first side edge, and the chamfered edge is provided with a chamfered edge insulating area. A chamfered main grid is provided on the first surface, and the chamfered edge insulating area and the chamfered main grid have a second gap in the first direction. The chamfered main grid extends along the extension direction of the chamfered edge, and at least a portion of the plurality of fine grids intersects with the chamfered main grid and extends into the second gap. The fine grid located in the second gap is a second protruding fine grid, and the length of the second protruding fine grid is greater than zero and less than or equal to... , in, , Indicates: the coordinates of the intersection point where the second protruding fine gate intersects with the target side of the insulating region in the first direction, wherein the target side of the insulating region is the side of the insulating region closest to the chamfered main gate. This indicates the coordinates of the intersection point where the second protruding fine grid intersects with the target side of the chamfered main grid in the first direction, wherein the target side of the chamfered main grid is the side of the chamfered main grid near the chamfered edge insulation area.

[0014] Optionally, the length of the second protruding fine grating ranges from (0, 1.26] mm.

[0015] Optionally, the length of the long side is reduced, the maximum length of the first protruding fine gate is increased, the length of the long main gate side is reduced, and the maximum length of the second protruding fine gate is increased.

[0016] Optionally, the lengths of the long side and the short side are both in the range of [30, 1040] micrometers; and / or, the width of the insulating region is in the range of [0, 260] micrometers.

[0017] Secondly, embodiments of this application provide a photovoltaic module, which includes the photovoltaic cell described in any one of the first aspects above.

[0018] In this embodiment, since at least a portion of the insulating region and the edge main gate have a first gap in the first direction X, a plurality of fine gates are provided on the first surface, and at least a portion of the fine gates intersect with the edge main gate, such that the fine gates extend into the first gap. The fine gate located in the first gap becomes the first protruding fine gate. Furthermore, the length of the first protruding fine gate is greater than zero and less than or equal to... ,in, This allows the size of the first protruding fine grid to be determined by the size and shape of the edge main grid, enabling better setting of the size of the first protruding fine grid in the first gap, thus improving the energy transfer efficiency of the photovoltaic cell. In other words, by setting the size of the first protruding fine grid in the first gap, the first protruding fine grid can better transfer energy, thereby improving the energy transfer efficiency of the photovoltaic cell. Attached Figure Description

[0019] Figure 1 This diagram illustrates a photovoltaic cell provided in an embodiment of this application.

[0020] Figure 2 This diagram illustrates a second main gate provided in an embodiment of this application.

[0021] Figure 3 This is a schematic diagram illustrating the impact of the width of a first or second main gate provided in an embodiment of this application on power transfer efficiency and cost;

[0022] Figure 4 This is a schematic diagram showing the maximum length of the first protruding fine grid when the width of the insulating region at the first side is 0, according to an embodiment of this application.

[0023] Figure 5 This is a schematic diagram showing the maximum length of the first protruding fine grid when the width of the insulating region at the first side is 0.1 mm, according to an embodiment of this application.

[0024] Figure 6 This is a schematic diagram showing the maximum length of the first protruding fine grid when the width of the insulating region at the first side is 0.2 mm, according to an embodiment of this application.

[0025] Figure 7 This is a schematic diagram showing the maximum length of the first protruding fine grid when the width of the insulating region at the first side is 0.26 mm, according to an embodiment of this application.

[0026] Figure 8 This is a schematic diagram illustrating a chamfered main gate and a chamfered edge insulation region provided in an embodiment of this application.

[0027] Figure 9 One of the schematic diagrams illustrating the width of the second protruding fine grid and the chamfered edge insulation region provided in an embodiment of this application;

[0028] Figure 10 This is a schematic diagram illustrating a fine grid at a chamfered edge provided in an embodiment of this application;

[0029] Figure 11 This is a second schematic diagram illustrating the width of the second protruding fine grid and the chamfered edge insulation region provided in an embodiment of this application.

[0030] Figure label:

[0031] X: First direction; Y: Second direction; 11: First face; 101: First side; 102: Chamfered edge; 20: Insulation area; 21: Chamfered edge insulation area; 30: Edge main gate; 31: First main gate segment; 32: Second main gate segment; 311: Long side; 312: Short side; 40: Fine gate; 401: First protruding fine gate; 402: Second protruding fine gate; 50: Chamfered main gate; 501: Long main gate edge; 502: Short main gate edge; 60: Edge pad; L1: First gap; L2: Second gap. Detailed Implementation

[0032] The terms "first" and "second" in the specification and claims of this application may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise stated, "multiple" means two or more. Furthermore, "and / or" in the specification and claims indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0033] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0034] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0035] like Figures 1 to 11As shown, the photovoltaic cell has a first direction X and a second direction Y, which are perpendicular and intersect. The photovoltaic cell includes a first surface 11, which has a first side 101 extending along the second direction Y. At least a portion of the edge of the first surface 11 is provided with an insulating region 20 extending along the second direction Y. An edge main grid 30 is provided on the first surface 11 and extends along the second direction Y. At least a portion of the insulating region 20 and the edge main grid 30 have a first gap L1 in the first direction X. A plurality of fine grids 40 are provided on the first surface 11, and at least a portion of the fine grids 40 intersect with the edge main grid 30 and extend into the first gap L1. The fine grids 40 located in the first gap L1 become first protruding fine grids 401, and the length of the first protruding fine grid is greater than zero and less than or equal to the length of the first protruding fine grid. ,in, This is the length value of the first gap.

[0036] In this embodiment, since at least a portion of the insulating region 20 and the edge main gate 30 have a first gap L1 in the first direction X, a plurality of fine gates 40 are provided on the first surface 11, and at least a portion of the fine gates 40 intersect with the edge main gate 30, thereby allowing the fine gates 40 to extend into the first gap L1. The fine gates 40 located in the first gap L1 become the first protruding fine gates 401. In addition, the length of the first protruding fine gate is greater than zero and less than or equal to... Thus, the first protruding fine grid 401 can better transfer electrical energy. That is, in this embodiment of the application, by setting the size of the first protruding fine grid 401 in the first gap L1, the first protruding fine grid 401 can better transfer electrical energy, thereby improving the efficiency of photovoltaic cell in transferring electrical energy.

[0037] In addition, in some embodiments, the edge main gate 30 includes a first main gate segment 31 and a second main gate segment 32. The first main gate segment 31 and the second main gate segment 32 both have a long side 311 and a short side 312 along the second direction Y. The short side 312 of the first main gate segment 31 is connected to the short side 312 of the second main gate segment 32, and the long side 311 of the first main gate segment 31 is connected to the long side 311 of the adjacent second main gate segment 32. The first main gate segment 31 and the adjacent second main gate segment 32 are graphically symmetrical about the short side 312 or the long side 311. ; This indicates the distance from the center line of the edge main gate 30 to the first side 101. This indicates the extension length of the insulation region 20. This represents the length of the shorter side, 312. This represents the distance between the longer side 311 and the immediately adjacent shorter side 312. This represents the angle between the line connecting the endpoint of the short side 312 near the insulating region 20 and the endpoint of the adjacent long side 311 near the insulating region 20, and the center line of the edge main grid 30. The center line of the edge main grid 30 is the line connecting the center of the long side 311 and the center of the short side 312. This indicates the distance between the first protruding fine grid and the adjacent long side 311.

[0038] In this embodiment, since at least a portion of the insulating region 20 and the edge main gate 30 have a first gap L1 in the first direction X, a plurality of fine gates 40 are provided on the first surface 11, and at least a portion of the fine gates 40 intersect with the edge main gate 30, thereby allowing the fine gates 40 to extend into the first gap L1. The fine gates 40 located in the first gap L1 become the first protruding fine gates 401. Furthermore, the length of the first protruding fine gate is: This allows the size of the first protruding fine grid to be determined by the size and shape of the edge main grid, enabling a better setting of the size of the first protruding fine grid 401 in the first gap L1, thus improving the energy transfer efficiency of the photovoltaic cell. In other words, by setting the size of the first protruding fine grid 401 in the first gap L1, the first protruding fine grid 401 can better transfer electrical energy, thereby improving the energy transfer efficiency of the photovoltaic cell.

[0039] It should be noted that, in this embodiment of the application, when the plurality of fine gates 40 intersect with the first main gate segment 31, the target first protruding fine gate is any one of the plurality of first protruding fine gates 401. This represents the distance between the target first protruding fine grid on the first main grid segment 31 and the long side 311 of the first main grid segment 31; when multiple fine grids 40 intersect with the second main grid segment 32, the target first protruding fine grid is any one of the multiple first protruding fine grids 401, at this time, This represents the distance between the target first protruding fine grid on the second main grid segment 32 and the long side 311 of the second main grid segment 32. Furthermore, when multiple fine grids 40 intersect with both the first main grid segment 31 and the second main grid segment 32, the target first protruding fine grid is the fine grid 40 containing the first protruding fine grid 401 that needs to be determined. If the first protruding fine grid 401 that needs to be determined intersects with the first main grid segment 31, then... This represents the distance between the target first protruding fine grid on the first main grid segment 31 and the long side 311 of the first main grid segment 31. If the first protruding fine grid 401 to be determined intersects with the second main grid segment 32, then... This indicates the distance between the target first protruding fine grid on the second main grid segment 32 and the long side 311 of the second main grid segment 32.

[0040] Furthermore, in the embodiments of this application, 0.52 is the distance from the center line of the edge main gate 30 to the first side edge 101. The unit of 0.52 is millimeters. Furthermore, in the embodiments of this application, Figure 2 middle This represents the length of the longer side 311.

[0041] In addition, in this embodiment, the insulating region 20 can be disposed on the first surface 11 by laser processing, spraying, or screen printing, but is not limited thereto. This embodiment does not impose any limitations on this. Furthermore, the edge main gate 30 can also be disposed on the first surface 11 by screen printing. Of course, the edge main gate 30 can also be disposed on the first surface 11 by other processes, such as spraying. This embodiment does not impose any limitations on this.

[0042] In addition, in this embodiment, the edge main gate 30 can be an N-type main gate.

[0043] Furthermore, in this embodiment, both the first main gate segment 31 and the second main gate segment 32 can be isosceles trapezoids, and the first main gate segment 31 and the second main gate segment 32 are symmetrical about the short side 312 or the long side 311 of the first main gate segment 31. Both the first main gate segment 31 and the second main gate segment 32 extend along the second direction Y.

[0044] Furthermore, in this embodiment, the first protruding fine gate 401 can be placed as close as possible to the insulating region 20. For example, the distance between the first protruding fine gate 401 and the insulating region 20 is 0.01 mm, or, for another example, the distance between the first protruding fine gate 401 and the insulating region 20 is 0.005 mm. This embodiment does not limit the scope of the application.

[0045] In the preferred embodiment, the first protruding fine grid 401 is disposed in close contact with the insulating region 20, that is, the distance between the first protruding fine grid 401 and the insulating region 20 is 0 mm. At this time, the length of the first protruding fine grid 401 is equal to This arrangement ensures that the first protruding fine grid 401 is in close contact with the insulating region 20, maximizing the collection of charge carriers by the photovoltaic cell and minimizing energy loss at the cell's edge.

[0046] In addition, in this embodiment, a plurality of edge pads 60 may be provided on the first surface, and the plurality of edge pads 60 are electrically connected to the edge main gate 30. When the edge main gate 30 includes a first main gate segment 31 and a second main gate segment 32, the first main gate segment 31 can be connected to the edge pads 60, and the second main gate segment 32 can also be connected to the edge pads 60. This embodiment does not limit the scope of this embodiment.

[0047] Additionally, in some embodiments, the length of the first protruding fine gate 401 is greater than or equal to Half of, and less than or equal to In this embodiment of the application, the length of the first protruding fine gate 401 is less than or equal to... Under the premise that the length of the first protruding fine gate 401 can be greater than or equal to Half of it.

[0048] Additionally, in some embodiments... The ratio of the length value to the width value of the insulation zone 20 is greater than 1.5.

[0049] Additionally, in some embodiments, the length of the first protruding fine gate 401 ranges from (0, 0.505] mm. Wherein, as... Figure 4 , Figure 5 , Figure 6 and Figure 7 As shown, by using the formula for determining the first protruding fine grid described above, the maximum length of the first protruding fine grid 401 changes when different widths of the insulating region 20 are set. Furthermore, in this embodiment, when the protruding fine grid is disposed close to the insulating region, It is 0.52 mm. It is 0 millimeters. It is 0.03 mm. The value is 5.7 mm, and the range of y is 1-5.7 mm. At 0 degrees, the length of the first protruding fine grid is 0.505 mm. The above embodiment can obtain the longest first protruding fine grid, which can maximize the collection of charge carriers and minimize the loss of energy collection at the edge of the photovoltaic cell.

[0050] In addition, in some embodiments, the lengths of the long side 311 and the short side 312 are both in the range of [30, 1040] micrometers. With this setting, when the edge main gate 30 is formed on the first surface 11 by screen printing, the edge main gate 30 can be formed directly on the first surface 11 according to the existing screen printing process level, without the need to improve the screen printing level, which can facilitate the formation of the edge main gate 30 on the first surface 11.

[0051] It should be noted that the length of the longer side 311 is greater than the length of the shorter side 312. The length of the longer side 311 can be any value from 30 micrometers to 1040 micrometers, and the length of the shorter side 312 can also be any value from 30 micrometers to 1040 micrometers. For example, the length of the longer side 311 is 40 micrometers and the length of the shorter side 312 is 30 micrometers. Another example is that the length of the longer side 311 is 1020 micrometers and the length of the shorter side 312 is 100 micrometers. This embodiment of the present application does not limit the specific length of the longer side 311.

[0052] Additionally, in some embodiments, the length of the short side 312 is 30 micrometers. With such a setting, as... Figure 3 As shown, the edge main grid 30 of the photovoltaic cell can minimize the amount of material used in the edge main grid 30 while still meeting the requirements for transmitting electrical energy, thereby reducing the cost of the photovoltaic cell.

[0053] In some embodiments, the first surface 11 has a chamfered edge 102 connected to the first side 101. The chamfered edge 102 is provided with a chamfered edge insulating area 21. A chamfered main grid 50 is provided on the first surface 11. The chamfered edge insulating area 21 and the chamfered main grid 50 have a second gap L2 in the first direction X. The chamfered main grid 50 extends along the direction of the chamfered edge 102. At least some of the multiple fine grids 40 intersect with the chamfered main grid 50 and extend into the second gap L2. The fine grids 40 located in the second gap L2 are second protruding fine grids 402. The length of the second protruding fine grid 402 is greater than zero and less than or equal to zero. ,in, , This indicates the coordinates of the intersection point where the second protruding fine grid 402 intersects with the target side of the chamfered edge insulation region 21 in the first direction X. The target side of the chamfered edge insulation region 21 is the side of the chamfered edge insulation region 21 closest to the chamfered main grid 50. This indicates the coordinates of the intersection point where the second protruding fine grid 402 intersects the target side of the chamfered main grid 50 in the first direction X. The target side of the chamfered main grid 50 is the side of the chamfered main grid 50 closest to the insulating region 20. This setting effectively determines the length of the target second protruding fine grid using the chamfered main grid 50 and the chamfered insulating region 21. Therefore, the length of the second protruding fine grid 402 at the chamfer of the photovoltaic cell can also be set, thereby improving the power transfer efficiency of the photovoltaic cell at the chamfer.

[0054] It should be noted that the chamfered edge 102 can be an arc-shaped edge, the chamfered main grid 50 can be a gradient main grid, and the chamfered main grid 50 is arc-shaped as a whole.

[0055] Additionally, in the embodiments of this application, such as Figure 8 As shown, by setting different points and establishing a coordinate system according to the first direction X and the second direction Y, the maximum length of the second protruding fine grid of the target can be determined. Specifically, it can be:

[0056] In some embodiments, the chamfered main gate 50 has a long main gate edge 501 and a short main gate edge 502 extending along the chamfered edge 102. The length of the long main gate edge 501 is 0.25 mm, and the length of the short main gate edge 502 is 0.03 mm. The long main gate edge 501 is closer to the edge main gate 30 in the second direction Y, while the short main gate edge 502 is farther from the edge main gate 30 in the second direction Y. This arrangement allows the dimensions of the chamfered main gate 50 to be fixed, thereby reducing the material usage and cost while still meeting the power transmission requirements.

[0057] Additionally, in some embodiments, the length of the second protruding fine gate 402 ranges from (0, 1.26] millimeters. Wherein, as... Figure 9 As shown, by using the formula for determining the second protruding fine grid 402, the maximum length of the second protruding fine grid 402 changes when different widths of the insulating region 20 are set, but the maximum length of the second protruding fine grid 402 will eventually become a fixed value, thereby determining the range of the length of the second protruding fine grid 402. This fixed value is 1.26 mm, thus determining the range of the length of the second protruding fine grid as (0, 1.26] mm.

[0058] Additionally, in some embodiments, the length of the long side 311 is reduced, the maximum length of the first protruding fine gate 401 is increased, the length of the long main gate side 501 is reduced, and the maximum length of the second protruding fine gate 402 is increased. For example, Figure 4 , Figure 5 , Figure 6 and Figure 7 As shown, when the length of the long side 311 is 50% of the maximum length of the long side 311, the maximum length of the first protruding fine gate 401 increases accordingly.

[0059] Furthermore, in this embodiment, when the size of the photovoltaic cell changes from the current 182*183.75 Φ247mm to 182.2*191.6 Φ262.5mm, the maximum length of the second protruding fine grid 402 at the chamfer can be confirmed. The length of the short main grid edge 502 is 0.03mm, and the length of the long main grid edge 501 is 0.25mm. The maximum length of the second protruding fine grid 402 varies with the y-coordinate and the insulation width as follows: Figure 11 As shown. The maximum length of the second protruding fine grid 402 is 1.23 mm, thus the length range of the second protruding fine grid is (0, 1.23] mm. Due to the large radius of the chamfer edge 102, only two second protruding fine grids 402 can be accommodated at the chamfer edge 102. Figure 11 There are only two y-coordinate values.

[0060] In addition, in some embodiments, the width of the insulating region 20 ranges from [0, 260] micrometers. With this setting, when the insulating region 20 is formed on the first surface 11 by screen printing, the insulating region 20 can be formed directly on the first surface 11 based on the existing screen printing process level, without the need to improve the screen printing level, which facilitates the formation of the insulating region 20 on the first surface 11.

[0061] In this embodiment, since at least a portion of the insulating region 20 and the edge main gate 30 have a first gap L1 in the first direction X, a plurality of fine gates 40 are provided on the first surface 11, and at least a portion of the fine gates 40 intersect with the edge main gate 30, thereby allowing the fine gates 40 to extend into the first gap L1. The fine gates 40 located in the first gap L1 become the first protruding fine gates 401. In addition, the length of the first protruding fine gate is greater than zero and less than or equal to... ,in, This allows the size of the first protruding fine grid to be determined by the size and shape of the edge main grid, enabling a better setting of the size of the first protruding fine grid 401 in the first gap L1, thus improving the energy transfer efficiency of the photovoltaic cell. In other words, by setting the size of the first protruding fine grid 401 in the first gap L1, the first protruding fine grid 401 can better transfer electrical energy, thereby improving the energy transfer efficiency of the photovoltaic cell.

[0062] This application does not limit the number of edge main gates (30) in this embodiment; the number can be selected according to actual needs. It also does not limit whether there are other main gates besides the edge main gates (30); these can be selected according to actual needs, such as having main gates, not having main gates, having partial main gates, or having electrical connection parts (such as pads).

[0063] This application provides a photovoltaic module, which includes the photovoltaic cells in any of the above embodiments.

[0064] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0065] Although embodiments of this application have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of this application, the scope of which is defined by the claims and their equivalents.

Claims

1. A photovoltaic cell, characterized by, The photovoltaic cell has a first direction and a second direction, the first direction and the second direction intersect, the photovoltaic cell comprises a first surface, the first surface has a first side edge, and the first side edge extends along the second direction, at least a part of an edge of the first surface is provided with an insulating region, the insulating region extends along the second direction; an edge main grid is arranged on the first surface, and the edge main grid extends along the second direction; At least part of the insulating region and the edge main grid have a first gap in the first direction, the first surface is provided with a plurality of fine grids, and at least part of the fine grids intersect with the edge main grid and extend into the first gap. The fine grid located in the first gap is a first protruding fine grid, the length of the first protruding fine grid is greater than zero and less than or equal to wherein, is a length value of the first gap.

2. The photovoltaic cell of claim 1, wherein, The edge main grid comprises a first main grid segment and a second main grid segment, the first main grid segment and the second main grid segment both have opposite long edges and short edges along the second direction, the short edge of the first main grid segment is connected with the short edge of the second main grid segment adjacent thereto, and the long edge of the first main grid segment is connected with the long edge of the second main grid segment adjacent thereto; the first main grid segment and the second main grid segment adjacent thereto are pattern-symmetric about the short edge or the long edge. ; represents a length of the first side edge from a center line of the edge main grid, represents an extension length of the insulating region, represents a length of the short edge, represents a distance between the long edge and the short edge adjacent thereto, represents an angle between a line connecting an end point of the short edge adjacent to the insulating region and an end point of the long edge adjacent to the insulating region, and a center line of the edge main grid, the center line of the edge main grid being a line connecting a center of the long edge and a center of the short edge, represents a distance between the first protruding fine grid and the long edge adjacent thereto.

3. Photovoltaic cell according to claim 1 or 2, characterized in that The length of the first protruding fine grid is greater than or equal to half of the and less than or equal to the .

4. Photovoltaic cell according to claim 1 or 2, characterized in that The The ratio of the length value to the width value of the insulation area is greater than 1.

5.

5. The photovoltaic cell of claim 3, wherein, The first protruding thin grid is arranged closely to the insulating region, and the length of the first protruding thin grid is equal to .

6. The photovoltaic cell of claim 2, wherein, The is 0.52 millimeters, the is 0 millimeters, the is 0.03 millimeters, the is 5.7 millimeters, the range of y is 1-5.7 millimeters, the is 0 degrees, the length of the first protruding thin grid is 0.505 millimeters.

7. Photovoltaic cell according to claim 1 or 2, characterized in that The first side has a chamfered edge connected with the first side, the chamfered edge is provided with a chamfered edge insulating region, the first side is provided with a chamfered main grid, the chamfered edge insulating region and the chamfered main grid have a second gap in the first direction, the chamfered main grid extends along the extension direction of the chamfered edge, at least part of the plurality of fine grids intersects with the chamfered main grid and extends into the second gap, the fine grid in the second gap is a second protruding fine grid, the length of the second protruding fine grid is greater than zero and less than or equal to , wherein , represents: in the first direction, the coordinate value of the intersection point of the second protruding fine grid and the target side edge of the chamfered edge insulating region, the target side edge of the chamfered edge insulating region is the side edge of the chamfered edge insulating region close to the chamfered main grid, represents: in the first direction, the coordinate value of the intersection point of the second protruding fine grid and the target side edge of the chamfered main grid, the target side edge of the chamfered main grid is the side edge of the chamfered main grid close to the chamfered edge insulating region.

8. The photovoltaic cell of claim 7, wherein, The length of the second protruding fine grid ranges from (0, 1.26] millimeters.

9. The photovoltaic cell of claim 2, wherein, The length of the long edge and the length of the short edge both range from [30, 1040] micrometers; and / or, the width of the insulating region ranges from [0, 260] micrometers.

10. A photovoltaic module, characterized by, The photovoltaic module comprises the photovoltaic cell according to any one of claims 1-9.

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