Light emitting device
By setting a reflective layer and encapsulating colloid on the bottom surface of the flip-chip LED device, the light emission angle is expanded, which solves the high cost problem caused by the dense arrangement of flip-chip LED devices in the backlight module, and achieves sparse arrangement and cost reduction.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-22
- Publication Date
- 2026-03-17
AI Technical Summary
Existing flip-chip LED devices have a small light-emitting angle, which requires them to be closely arranged in the backlight module, increasing production costs.
A first reflective layer is provided on one side of the bottom surface of the light-emitting component, and combined with an encapsulating colloid, the light emission angle is expanded through reflection and diffusion, allowing for the application of sparsely arranged devices.
The increased light-emitting angle reduces the number of light-emitting devices used in the backlight module, thus lowering production costs.
Smart Images
Figure CN224007033U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of optoelectronic technology, and in particular to a light-emitting device. Background Technology
[0002] Compared with conventional LED chips, flip-chip LED chips have better heat dissipation and luminous efficiency, and have advantages such as low voltage, high brightness, high reliability, and high saturation current density. They have significant performance advantages and good development prospects.
[0003] However, existing flip-chip LED devices have a small light-emitting angle. When LED devices are used in backlight modules, they need to be arranged more closely, resulting in a large number of LED devices and thus higher production costs for backlight modules. Utility Model Content
[0004] Based on this, embodiments of this application provide a light-emitting device.
[0005] This application provides a light-emitting device, including:
[0006] A light-emitting component, the light-emitting component including a first top surface and a first bottom surface disposed opposite to each other, and a first side surface connecting the first top surface and the first bottom surface;
[0007] An encapsulating colloid, wherein the encapsulating colloid covers at least a portion of the first top surface and the first side surface of the light-emitting component, and the side surface of the encapsulating colloid facing the first bottom surface of the light-emitting component is a second bottom surface;
[0008] A first reflective layer is disposed below the light-emitting component and the encapsulating colloid, and the first bottom surface of the light-emitting component and the second bottom surface of the encapsulating colloid are both connected to the first reflective layer.
[0009] In some embodiments, the light-emitting component includes a light-emitting element and a first electrode and a second electrode connected to the light-emitting element, wherein the first electrode and the second electrode are spaced apart.
[0010] In some embodiments, the first electrode includes a first connection portion and a second connection portion connected together, wherein the first connection portion is embedded in the first reflective layer, and the second connection portion is located on the side of the first reflective layer opposite to the encapsulating colloid and the light-emitting component;
[0011] The second electrode includes a third connection portion and a fourth connection portion connected together, wherein the third connection portion is embedded in the first reflective layer, and the fourth connection portion is located on the side of the first reflective layer opposite to the encapsulating colloid and the light-emitting component.
[0012] In some embodiments, the light-emitting component further includes a second reflective layer disposed on the side of the light-emitting element opposite to the first electrode and the second electrode.
[0013] In some embodiments, the second reflective layer is a DBR reflective layer; and / or,
[0014] The second reflective layer has a reflectivity of 99% or greater for visible light.
[0015] In some embodiments, the light-emitting element is a flip-chip LED; and / or,
[0016] The light-emitting surface of the light-emitting element faces the first reflective layer.
[0017] In some embodiments, the light-emitting element includes a substrate and an epitaxial layer stacked together, wherein the epitaxial layer is disposed toward the first reflective layer.
[0018] In some embodiments, the substrate is a sapphire substrate; and / or,
[0019] The thickness of the substrate is 100μm-200μm; and / or,
[0020] The epitaxial layer is a GaN-based epitaxial thin film.
[0021] In some embodiments, the second bottom surface is a plane, the encapsulating colloid includes a central region and a peripheral region, the peripheral region has a first outer edge and an inner edge intersecting the central region, the height of the encapsulating colloid gradually increases from the first outer edge to the inner edge, the central region has a second outer edge intersecting the inner edge, and the height of the encapsulating colloid gradually increases from the center point of the central region to the second outer edge; and / or,
[0022] The area on the outer surface of the encapsulating colloid other than the second bottom surface is the upper surface, and the upper surface is a curved surface.
[0023] In some embodiments, the thickness of the first reflective layer is less than the thickness of the light-emitting component; and / or,
[0024] The first reflective layer has a reflectivity of 80% or greater for visible light; and / or,
[0025] The first reflective layer comprises a resin material.
[0026] The light-emitting device provided in this application embodiment, by providing a first reflective layer on one side of the first bottom surface of the light-emitting component, can reflect the emitted light from the light-emitting component using the first reflective layer. This not only increases the light emission rate but also changes the emission angle of the light, thereby expanding the emission angle of the light-emitting device. Furthermore, since the encapsulating colloid can diffuse the light, the combination of the first reflective layer and the encapsulating colloid enables the light-emitting device to have a larger emission angle. When this light-emitting device is applied in a backlight module, the light-emitting devices can be arranged in a relatively sparse manner, resulting in a smaller number of light-emitting devices and thus reducing the production cost of the backlight module. Attached Figure Description
[0027] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below.
[0028] Figure 1 This is a schematic diagram of the structure of the light-emitting device provided in the embodiments of this application.
[0029] Component symbol explanation:
[0030] 100. Light-emitting device; 20. Light-emitting component; S21. First top surface; S22. First bottom surface; S23. First side surface; 24. Light-emitting element; 241. Substrate; 242. Epitaxial layer; 25. First electrode; 251. First connecting part; 252. Second connecting part; 26. Second electrode; 261. Third connecting part; 262. Fourth connecting part; 27. Second reflective layer; 30. Encapsulating colloid; 31. Central region; 32. Peripheral region; S33. Second bottom surface; S34. Top surface; 40. First reflective layer. Detailed Implementation
[0031] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.
[0032] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.
[0033] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.
[0034] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.
[0035] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.
[0036] Please see Figure 1 This application provides a light-emitting device 100, including a light-emitting component 20, an encapsulating colloid 30, and a first reflective layer 40. The light-emitting component 20 includes a first top surface S21 and a first bottom surface S22 disposed opposite to each other, and a first side surface S23 connecting the first top surface S21 and the first bottom surface S22. The encapsulating colloid 30 covers at least a portion of the first top surface S21 and the first side surface S23 of the light-emitting component 20, and the side surface of the encapsulating colloid 30 facing the first bottom surface S22 of the light-emitting component 20 is a second bottom surface S33. The first reflective layer 40 is disposed below the light-emitting component 20 and the encapsulating colloid 30, and both the first bottom surface S22 of the light-emitting component 20 and the second bottom surface S33 of the encapsulating colloid 30 are connected to the first reflective layer 40.
[0037] For example, the first reflective layer 40 has a reflectivity of 80% or more for visible light. In some embodiments, the first reflective layer 40 has a reflectivity of 90% or more for visible light.
[0038] For example, the wavelength range of visible light is 380 nm to 780 nm.
[0039] Exemplarily, the first reflective layer 40 comprises a resin material, and the first reflective layer 40 is typically formed by a coating method. Exemplarily, the first reflective layer 40 further comprises a reflective material, the mass ratio of the reflective material to the resin material being (5-30):100, and the reflective material being pearlescent mica, zinc oxide, magnesium oxide, aluminum oxide, or titanium dioxide.
[0040] In some embodiments, the material of the first reflective layer 40 is white glue.
[0041] For example, the emitted light from the light-emitting device 100 is blue light.
[0042] The light-emitting device 100 provided in this application embodiment has a first reflective layer 40 disposed on one side of the first bottom surface S22 of the light-emitting component 20. The first reflective layer 40 can reflect the emitted light from the light-emitting component 20, thereby increasing the light emission rate and changing the emission angle of the light, thus expanding the emission angle of the light-emitting device 100. Furthermore, since the encapsulating colloid 30 can diffuse the light, the combination of the first reflective layer 40 and the encapsulating colloid 30 can enable the light-emitting device 100 to have a larger emission angle. When the light-emitting device 100 is applied in a backlight module, the light-emitting devices 100 can be arranged in a relatively sparse manner, and the number of light-emitting devices 100 used is small, thereby reducing the production cost of the backlight module.
[0043] Please see Figure 1 The light-emitting component 20 includes a light-emitting element 24 and a first electrode 25 and a second electrode 26 connected to the light-emitting element 24, wherein the first electrode 25 and the second electrode 26 are spaced apart.
[0044] For example, one of the first electrode 25 and the second electrode 26 is a positive electrode and the other is a negative electrode.
[0045] Please see Figure 1 The first electrode 25 includes a first connecting portion 251 and a second connecting portion 252 connected together, wherein the first connecting portion 251 is embedded in the first reflective layer 40, and the second connecting portion 252 is located on the side of the first reflective layer 40 away from the encapsulating colloid 30 and the light-emitting component 20.
[0046] The second electrode 26 includes a third connection portion 261 and a fourth connection portion 262 connected together, wherein the third connection portion 261 is embedded in the first reflective layer 40, and the fourth connection portion 262 is located on the side of the first reflective layer 40 away from the encapsulating colloid 30 and the light-emitting component 20.
[0047] For example, the second connection portion 252 in the first electrode 25 and the fourth connection portion 262 in the second electrode 26 are both fabricated using photolithography.
[0048] It should be noted that by providing a second connecting portion 252 in the first electrode 25 and a fourth connecting portion 262 in the second electrode 26, the pad area of the first electrode 25 and the second electrode 26 is effectively increased, thereby facilitating the mounting of the light-emitting device 100 on the circuit board using SMT technology and improving production yield.
[0049] Please see Figure 1 The light-emitting component 20 further includes a second reflective layer 27, which is disposed on the side of the light-emitting element 24 away from the first electrode 25 and the second electrode 26.
[0050] It should be noted that by providing a second reflective layer 27 on the side of the light-emitting element 24 away from the first electrode 25 and the second electrode 26 (first top surface S21), the light reflected from the first reflective layer 40 can be reflected again by the second reflective layer 27. After the light emitted by the light-emitting element 24 is reflected back and forth multiple times by the first reflective layer 40 and the second reflective layer 27, the light dispersion effect can be enhanced, thereby further expanding the light emission angle of the light-emitting device 100.
[0051] Please see Figure 1 The second reflective layer 27 is a DBR reflective layer.
[0052] As is understandable, a Distributed Bragg Reflector (DBR) is an optical structure that uses a periodic change in refractive index to reflect light of a specific wavelength. A DBR typically consists of multiple alternating layers of high- and low-refractive-index materials. These materials are precisely designed to provide high reflectivity at specific wavelengths. Typical high-refractive-index materials include titanium nitride (TiN) and magnesium fluoride (MgF2), while low-refractive-index materials include silicon oxide (SiO2). By precisely controlling the thickness and material of each layer, a DBR can achieve a very narrow reflection bandwidth and high reflection efficiency.
[0053] For example, the second reflective layer 27 has a reflectivity of 99% or greater for visible light. In some embodiments, the second reflective layer 27 has a reflectivity of 99.7% or greater for visible light.
[0054] Please see Figure 1 The light-emitting surface of the light-emitting element 24 faces the first reflective layer 40.
[0055] For example, the light-emitting element 24 is a flip-chip LED.
[0056] Please see Figure 1 The light-emitting element 24 includes a substrate 241 and an epitaxial layer 242 stacked together, wherein the epitaxial layer 242 is disposed facing the first reflective layer 40.
[0057] For example, the substrate 241 is a sapphire substrate.
[0058] For example, the thickness of the substrate 241 is 100μm-200μm, such as 100μm, 120μm, 150μm, 180μm, 200μm, etc.
[0059] For example, the epitaxial layer 242 is a GaN-based epitaxial film, which includes an N-type semiconductor layer, a blue quantum well layer, a P-type gallium nitride layer, etc.
[0060] Please see Figure 1 The thickness of the first reflective layer 40 is less than the thickness of the light-emitting component 20.
[0061] It should be noted that by setting the thickness of the first reflective layer 40 to be less than the thickness of the light-emitting component 20, it is possible to avoid the first reflective layer 40 completely blocking the first side surface S23 of the light-emitting component 20, which would prevent the light emitted by the light-emitting component 20 from being effectively emitted.
[0062] Please see Figure 1 The second bottom surface S33 is a plane. The encapsulating colloid 30 includes a central region 31 and a peripheral region 32. The peripheral region 32 has a first outer edge and an inner edge that intersects with the central region 31. The height of the encapsulating colloid 30 gradually increases from the first outer edge to the inner edge. The central region 31 has a second outer edge that intersects with the inner edge. The height of the encapsulating colloid 30 gradually increases from the center point of the central region 31 to the second outer edge.
[0063] It is understood that the central point of the central region 31 is the geometric center of the central region 31.
[0064] In some embodiments, the central region 31 is circular, with the center point of the central region 31 being the center of the circle, and the outer region 32 is annular.
[0065] Please see Figure 1The area on the outer surface of the encapsulating colloid 30 other than the second bottom surface S33 is the upper surface S34, and the upper surface S34 is a curved surface.
[0066] It should be noted that by setting the outer region 32 of the encapsulating colloid 30 to have a gradually increasing height from the outside to the inside and the central region 31 to have a gradually decreasing height from the outside to the inside, the first side surface S23 and the upper surface S34 of the encapsulating colloid 30 have continuously changing shapes. When the light emitted by the light-emitting element 24 is incident on different points on the upper surface S34 of the encapsulating colloid 30, the light can be refracted and reflected at different angles, thereby further expanding the light emission angle of the light-emitting device 100.
[0067] The light-emitting devices provided in the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are only for the purpose of helping to understand this application. Furthermore, those skilled in the art will recognize that, based on the ideas of this application, there will be changes in the specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this application.
Claims
1. A light emitting device, characterized by, The application relates to a light-emitting component and a manufacturing method thereof. The light-emitting component comprises a first top surface and a first bottom surface arranged oppositely and a first side surface connecting the first top surface and the first bottom surface. An encapsulating glue covers the first top surface of the light-emitting component and at least a part of the first side surface. A first reflecting layer is arranged below the light-emitting component and the encapsulating glue.
2. The light emitting device of claim 1, wherein, The light-emitting component comprises a light-emitting element and a first electrode and a second electrode connected to the light-emitting element.
3. The light emitting device of claim 2, wherein, The first electrode comprises a first connecting part and a second connecting part connected to each other. The first connecting part is embedded in the first reflecting layer, and the second connecting part is arranged on a side of the first reflecting layer away from the encapsulating glue and the light-emitting component.
4. The light emitting device of claim 2, wherein, The second electrode comprises a third connecting part and a fourth connecting part connected to each other.
5. The light emitting device of claim 4, wherein, The third connecting part is embedded in the first reflecting layer, and the fourth connecting part is arranged on a side of the first reflecting layer away from the encapsulating glue and the light-emitting component. The light-emitting component further comprises a second reflecting layer arranged on a side of the light-emitting element away from the first electrode and the second electrode.
6. The light emitting device of claim 2, wherein The second reflecting layer is a DBR reflecting layer. The reflectivity of the second reflecting layer to visible light is greater than or equal to 99%.
7. The light emitting device of claim 2, wherein, The light-emitting element is a flip-chip LED chip.
8. The light emitting device of claim 7, wherein, The light-emitting surface of the light-emitting element faces the first reflecting layer. The light-emitting element comprises a substrate and an epitaxial layer arranged in a stack. The substrate is a sapphire substrate.
9. The light-emitting device according to any one of claims 1 to 8, wherein The thickness of the substrate is 100-200 microns. The epitaxial layer is a GaN-based epitaxial film.
10. The light-emitting device according to any one of claims 1 to 8, wherein The second bottom surface is a plane. The encapsulating glue comprises a central region and a peripheral region. The peripheral region has a first outer edge and an inner edge connected to the central region. The height of the encapsulating glue gradually increases from the first outer edge to the inner edge. The central region has a second outer edge connected to the inner edge. The height of the encapsulating glue gradually increases from a central point of the central region to the second outer edge. The outer surface of the encapsulating glue, except the second bottom surface, is an upper surface. The upper surface is a curved surface. The thickness of the first reflecting layer is less than the thickness of the light-emitting component. The reflectivity of the first reflecting layer to visible light is greater than or equal to 80%. The first reflecting layer comprises a resin material.