Double-sided heat dissipation integrated gallium nitride module
By employing a double-sided heat dissipation design and integrated circuits in the gallium nitride module, the problems of heat dissipation bottleneck and insufficient integration are solved, achieving efficient heat dissipation and modularity, and improving system efficiency and compatibility.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-02
- Publication Date
- 2026-03-24
AI Technical Summary
Existing gallium nitride modules suffer from heat dissipation bottlenecks, insufficient integration, and poor compatibility. In particular, single-sided heat dissipation leads to high thermal resistance, uneven local heat dissipation, and limited power density. Furthermore, the separate design of the drive circuit and power devices results in large size and increased parasitic parameters.
It adopts a double-sided heat dissipation design, integrating the driver chip and protection circuit on the same substrate. It uses a copper shell to solder the chip for heat conduction, and achieves double-sided heat dissipation through a rectangular box-shaped shell. The pin design is standardized as TO247-4, which has strong compatibility.
It achieves efficient heat dissipation and modular design, reduces parasitic inductance, reduces interconnect wire length, improves system efficiency and response speed, and has strong compatibility to adapt to different application scenarios.
Smart Images
Figure CN224037731U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to the technical field of gallium nitride, especially a double-sided heat dissipation integrated gallium nitride module. BACKGROUND
[0002] Gallium nitride (GaN) devices are ideal choices for high-frequency, high-efficiency, and high-power density applications due to their high electron mobility, wide bandgap, and high breakdown field strength. Compared with traditional silicon-based devices (such as Si MOSFET or IGBT), GaN devices can operate at higher switching frequencies (MHz level) while significantly reducing switching loss and on-state loss. However, high power density also means that heat is concentrated in a unit area, and heat dissipation has become a core challenge to the performance and reliability of GaN modules.
[0003] GaN devices are widely used in power conversion, new energy, and electric vehicles due to their high-frequency, high-efficiency, and low-loss characteristics. However, existing GaN modules still have the following problems:
[0004] Heat dissipation bottleneck: Traditional modules mostly use bottom heat dissipation design, but the high power density of GaN devices leads to heat concentration, long bottom heat dissipation path, large thermal resistance, easy to cause local overheating, and affect reliability.
[0005] Insufficient integration: The drive circuit, control unit, and power device are mostly designed separately, requiring external wiring connection, leading to large size, increased parasitic parameters, and restricting system efficiency and response speed.
[0006] Poor compatibility: Non-modular design leads to the need for re-layout when adapting to different application scenarios, increasing development cycle and cost.
[0007] In view of the above problems, there is an urgent need for a high-heat-dissipation-efficiency, high-integration gallium nitride module design scheme. SUMMARY
[0008] Therefore, the technical problem to be solved by the utility model is to overcome the problems of high thermal resistance, uneven local heat dissipation, and limited power density in the prior art, which are caused by the single-sided heat dissipation (bottom & top) of conventional GaN discrete devices and modules, and the heat is dissipated through a single path on one side.
[0009] To solve the above technical problems, the utility model provides a double -sided heat dissipation's integrated gallium nitride module, include: base plate, it is rectangular thin board shape, two rectangular surfaces of base plate are first and second surface respectively, be equipped with metal path for transmitting electric signal on base plate, be equipped with a plurality of first wiring pin and a plurality of second wiring pin on base plate;First integrated electrical module, it is installed on the first surface, first integrated electrical module is connected to a plurality of first wiring pin through metal path;Second integrated electrical module, it is installed on the second surface, second integrated electrical module is connected to a plurality of second wiring pin through metal path;Shell, it is sleeved in first integrated electrical module and second integrated electrical module outside, and shell is used for first integrated electrical module and second integrated electrical module conduction heat dissipation.
[0010] In an embodiment of the utility model, the shell is rectangular box shape, and one end of shell is equipped with opening, a plurality of first wiring pin and a plurality of second wiring pin extend out opening.
[0011] In an embodiment of the utility model, the shell is rectangular box shape, and one end of shell is equipped with opening, a plurality of first wiring pin and a plurality of second wiring pin extend out opening.
[0012] In an embodiment of the utility model, the material of shell is copper, and the inner wall of shell is welded with first integrated electrical module and second integrated electrical module as a whole.
[0013] In an embodiment of the utility model, the base plate adopts PCB board or DCB board.
[0014] In an embodiment of the utility model, the first integrated electrical module includes first drive chip and a plurality of first circuit protection devices, and the first drive chip is connected with the plurality of first circuit protection devices through the metal path.
[0015] In an embodiment of the utility model, the second integrated electrical module includes second drive chip and a plurality of second circuit protection devices, and the second drive chip is connected with the plurality of second circuit protection devices through the metal path.
[0016] In an embodiment of the utility model, the first wiring pin and the second wiring pin adopt TO247-4 pin.
[0017] In an embodiment of the utility model, the plurality of first wiring pin and the plurality of second wiring pin are all bent into "N" shape.
[0018] In an embodiment of the utility model, the plurality of first wiring pin and the plurality of second wiring pin are arranged in a row, and the plurality of first wiring pin and the plurality of second wiring pin are arranged alternately and spaced apart from each other.
[0019] Compared with the prior art, the above technical scheme of the utility model has the following beneficial effects:
[0020] The integrated gallium nitride module with double-side heat dissipation has high efficient heat dissipation and functional modularization through double-side direct heat dissipation:
[0021] 1. The driving chip and the protection circuit are integrated on the same substrate, the length of the interconnection wire is reduced, and the parasitic inductance is reduced;
[0022] 2. The copper heat-conducting shell is welded with the internal chip to directly conduct heat, and heat is conducted out from the front / rear double sides at the same time from the structural design;
[0023] 3. The standardized TO247-4 pin design can meet the characteristics of high current-carrying capacity, low loss and high mechanical strength, has strong compatibility, and is plug and play. BRIEF DESCRIPTION OF DRAWINGS
[0024] In order to make the content of the utility model more easily understood clearly, the utility model is further described in detail below according to the specific embodiments of the utility model and in combination with the drawings, wherein
[0025] Figure 1 It is a structure schematic view of the integrated gallium nitride module with double-side heat dissipation in the preferred embodiment of the utility model;
[0026] Figure 2 It is a structure schematic view of the integrated gallium nitride module with double-side heat dissipation in the preferred embodiment of the utility model;
[0027] Figure 3 It is a structure schematic view of the shell in the preferred embodiment of the utility model;
[0028] Figure 4 It is a structure schematic view of the first integrated electrical module in the preferred embodiment of the utility model;
[0029] Figure 5 It is a structure schematic view of the second integrated electrical module in the preferred embodiment of the utility model.
[0030] The description of the drawing of the specification is as follows: substrate 1, first surface 11, second surface 12, first wiring pin 13, second wiring pin 14, first integrated electrical module 2, first driving chip 21, first circuit protection device 22, second integrated electrical module 3, second driving chip 31, second circuit protection device 32, shell 4, opening 41, heat dissipation hole 42. DETAILED DESCRIPTION
[0031] The utility model makes further illustration to the utility model with the drawings and specific embodiments, so that the person skilled in the art can better understand the utility model and can be implemented, but the embodiment is not as the limitation to the utility model.
[0032] Referring to Figure 1 , 2 The utility model discloses a double -sided heat dissipation's integrated gallium nitride module, include: substrate 1, first integrated electrical module 2, second integrated electrical module 3 and shell 4 four parts, substrate 1 is rectangular thin plate, two rectangular faces of substrate 1 are first face 11 and second face 12 respectively, be equipped with the metal path for transmitting electric signal on substrate 1, be equipped with a plurality of first wiring pin 13 and a plurality of second wiring pin 14 on substrate 1, first integrated electrical module 2 is installed on first face 11, and first integrated electrical module 2 is connected to a plurality of first wiring pin 13 through metal path, second integrated electrical module 3 is installed on second face 12, and second integrated electrical module 3 is connected to a plurality of second wiring pin 14 through metal path, shell 4 is sleeved in first integrated electrical module 2 and second integrated electrical module 3 outside, and shell 4 is used for first integrated electrical module 2 and second integrated electrical module 3 conduction heat dissipation.
[0033] Referring to Figure 3 The shell 4 is rectangular box shape, and one end of the shell 4 is provided with an opening 41, and the plurality of first wiring pins 13 and the plurality of second wiring pins 14 extend out of the opening 41. The other end of the shell 4 away from the opening 41 is sealed, and the other end of the shell 4 away from the opening 41 is provided in a smooth arc shape, thereby reducing the corner of the shell 4 and avoiding collision damage between components.
[0034] In the above structure, the shell 4 is provided with a plurality of heat dissipation holes 42 on the end face opposite to the first integrated electrical module 2 and the second integrated electrical module 3. The heat dissipation holes 42 are rectangular small holes, and the plurality of heat dissipation holes 42 are arranged in a rectangular array on the rectangular face opposite to the first integrated electrical module 2 and the second integrated electrical module 3, and the plurality of heat dissipation holes 42 arranged in the rectangular array are close to one side of the opening 41.
[0035] The material of the shell 4 is copper, and the inner wall of the shell 4 is welded with the first integrated electrical module 2 and the second integrated electrical module 3 as a whole.
[0036] Preferably, the substrate 1 adopts a PCB board or a DCB board. The PCB / DCB substrate is used as a circuit conduction substrate (PCB has high integration and small size, but the thermal conductivity is relatively poor; DCB is limited by circuit layout rules and has large size and better thermal conductivity).
[0037] Referring to Figure 4As shown, the first integrated electrical module 2 comprises a first driving chip 21 and a plurality of first circuit protection devices 22, and the first driving chip 21 is connected with the plurality of first circuit protection devices 22 through metal paths. The first driving chip 21 and the plurality of first circuit protection devices 22 are connected to the plurality of first wiring pins 13 through metal paths.
[0038] With reference to Figure 5 As shown, the second integrated electrical module 3 comprises a second driving chip 31 and a plurality of second circuit protection devices 32, and the second driving chip 31 is connected with the plurality of second circuit protection devices 32 through metal paths. The first integrated electrical module 2 and the second integrated electrical module 3 are symmetrically arranged on two opposite surfaces of the substrate 1. The second driving chip 31 and the plurality of second circuit protection devices 32 are connected to the plurality of second wiring pins 14 through metal paths.
[0039] In the above structure, the first wiring pins 13 and the second wiring pins 14 adopt TO247-4 pins. The plurality of first wiring pins 13 and the plurality of second wiring pins 14 are all bent into a "ㄣ" shape. The plurality of first wiring pins 13 and the plurality of second wiring pins 14 are arranged in a row, and the plurality of first wiring pins 13 and the plurality of second wiring pins 14 are alternately arranged at intervals.
[0040] Obviously, the above embodiments are only examples for clearly illustrating the present application, and are not intended to limit the embodiments. Based on the above description, other different forms of changes or variations can be made by those skilled in the art. Here, it is not necessary and impossible to enumerate all the embodiments. The obvious changes or variations derived therefrom are still within the protection scope of the present application.
Claims
1. A double-sided heat dissipating integrated gallium nitride module, characterized by, The utility model relates to a kind of integrated electrical module, including: Substrate, it is rectangular thin plate, two rectangular faces of the substrate are first face and second face respectively, metal path for transmitting electric signal is equipped on the substrate, a plurality of first wiring pins and a plurality of second wiring pins are equipped on the substrate; First integrated electrical module is installed on the first face, and the first integrated electrical module is connected to a plurality of first wiring pins by metal path; Second integrated electrical module is installed on the second face, and the second integrated electrical module is connected to a plurality of second wiring pins by metal path; Shell is sleeved outside first integrated electrical module and second integrated electrical module, and shell is used for first integrated electrical module and second integrated electrical module conduction heat dissipation.
2. The dual-sided thermally dissipated integrated gallium nitride module of claim 1, wherein: The shell is rectangular box, and one end of the shell is provided with opening, and a plurality of first wiring pins and a plurality of second wiring pins extend out of the opening.
3. The dual-sided heat dissipating integrated gallium nitride module of claim 1 or 2, wherein: The shell is provided with a plurality of heat dissipation holes on the end face opposite to first integrated electrical module and second integrated electrical module.
4. The dual-sided thermally dissipated integrated gallium nitride module of claim 3, wherein: The material of the shell is copper, and the inner wall of the shell is welded with first integrated electrical module and second integrated electrical module as a whole.
5. The dual-sided thermally managed GaN module of claim 1, wherein: The substrate uses PCB board or DCB board.
6. The dual-sided thermally managed GaN module of claim 1, wherein: The first integrated electrical module includes first drive chip and a plurality of first circuit protection devices, and the first drive chip is connected to a plurality of first circuit protection devices by metal path.
7. The dual-sided thermally managed GaN module of claim 1, wherein: The second integrated electrical module includes second drive chip and a plurality of second circuit protection devices, and the second drive chip is connected to a plurality of second circuit protection devices by metal path.
8. The dual-sided thermally managed GaN module of claim 1, wherein: The first wiring pin and the second wiring pin use TO247-4 pin.
9. The dual-sided thermally dissipated integrated gallium nitride module of claim 8, wherein: A plurality of first wiring pins and a plurality of second wiring pins are bent into "N" shape.
10. The dual-sided thermally dissipated integrated gallium nitride module of claim 9, wherein: A plurality of first wiring pins and a plurality of second wiring pins are arranged in a row, and a plurality of first wiring pins and a plurality of second wiring pins are arranged alternately and spaced apart from each other.