Apparatus for manufacturing display device

Abstract

An apparatus for manufacturing a display device includes: a first chamber; a second chamber connected to the first chamber; a first controller configured to control the second chamber; a pressure regulator connected to the first chamber; and a second controller configured to control the pressure regulator. The first controller is configured to control at least one of a flow rate of the first material flowing into the second chamber and a flow rate of the second material flowing into the second chamber during execution of the cleaning process of the first chamber, and the second controller is configured to control the aperture ratio of the pressure regulator and maintain the pressure in the first chamber within a preset range during execution of the cleaning process of the first chamber.

Description

[0001] This application claims priority to Korean Patent Application No. 10-2024-0035984, filed on March 14, 2024, and all benefits therefrom, the disclosure of which is incorporated herein in its entirety by reference. TECHNICAL FIELD

[0002] Embodiments relate to an apparatus for manufacturing a display device and a method of manufacturing a display device. The display device can be a display device including light emitting diodes. BACKGROUND

[0003] A display apparatus can visually display data. The display device can display an image using light emitting diodes. To display an image, the display device can include a plurality of pixels in a pattern form. In this case, various layers including an emission layer can be included in the plurality of pixels having the pattern form. These layers can be arranged in different patterns according to their kinds.

[0004] Each layer of the display device can be formed by depositing a deposition material using a mask that defines an aperture corresponding to a pattern to be formed on a substrate. The deposition of the deposition material can be performed within a chamber of an apparatus for manufacturing the display device. After the deposition material is deposited on the substrate, a cleaning material can be injected into the chamber to remove the deposition material remaining on elements inside the chamber. The cleaning material can react with the deposition material remaining in a solid state to evaporate the deposition material, and the evaporated deposition material can be discharged to the outside of the chamber through a valve provided in the chamber. SUMMARY

[0005] Before the gas in the chamber is discharged to the outside of the chamber through the valve, the cleaning material must remain in the chamber for a sufficient time (or duration) to ensure sufficient cleaning. When the duration of the stay of the cleaning material in the chamber is guaranteed, the total duration required for cleaning can be shortened. Accordingly, conditions to ensure the duration of the stay of the cleaning material in the chamber need to be met.

[0006] Additional features will be set forth in part in the description which follows, and in part will become apparent to those skilled in the art upon examination of the following description and drawings, or can be learned by practice of the presented embodiments of the disclosure.

[0007] In an embodiment of the disclosure, an apparatus for manufacturing a display device includes a first chamber, a second chamber connected to the first chamber, a first controller configured to control the second chamber, a pressure regulator connected to the first chamber, and a second controller configured to control the pressure regulator. The first controller is configured to control at least one of a flow rate of a first material flowing into the second chamber and a flow rate of a second material flowing into the second chamber during performance of a cleaning process of the first chamber, and the second controller is configured to control an orifice ratio of the pressure regulator during the performance of the cleaning process of the first chamber and to maintain a pressure in the first chamber within a preset range.

[0008] In an embodiment, the first material can include a first element, and the apparatus for manufacturing a display device can generate first radicals of the first element by applying energy to the first material in the second chamber.

[0009] In an embodiment, the first element can be argon.

[0010] In an embodiment, the second material can include a second element, and the apparatus for manufacturing a display device can generate second radicals of the second element by the first radicals of the first element in the second chamber.

[0011] In an embodiment, the second element can be fluorine.

[0012] In an embodiment, the first radicals of the first element and the second radicals of the second element generated in the second chamber can be injected into the first chamber.

[0013] In an embodiment, the orifice ratio of the pressure regulator can be about 30% to about 35%.

[0014] In an embodiment, the flow rate of the first material flowing into the second chamber can be 50% or more of the flow rate of the second material flowing into the second chamber.

[0015] In an embodiment, the preset range of the pressure in the first chamber can be about 1.5 Torr to about 2.5 Torr.

[0016] In an embodiment of the disclosure, a method of manufacturing a display device includes depositing a deposition material on a substrate in a first chamber and cleaning the deposition material remaining in the first chamber. During the cleaning of the deposition material, at least one of a flow rate of a first material flowing into a second chamber connected to the first chamber and a flow rate of a second material flowing into the second chamber is adjusted, and an orifice ratio of a pressure regulator connected to the first chamber is adjusted, thereby maintaining a pressure in the first chamber within a preset range.

[0017] In an embodiment, the first material can include a first element, and the method can further include generating first radicals of the first element by applying energy to the first material in the second chamber.

[0018] In an embodiment, the first element can be argon.

[0019] In an embodiment, the second material can include a second element, and the method can further include generating second radicals of the second element by the first radicals of the first element in the second chamber.

[0020] In an embodiment, the second element can be fluorine.

[0021] In an embodiment, the first material and the second material can be injected together into the second chamber in a preset ratio during the generating of the second radicals of the second element.

[0022] In an embodiment, the method can further include injecting the first radicals of the first element and the second radicals of the second element generated in the second chamber into the first chamber.

[0023] In an embodiment, the open area ratio of the pressure regulator can be about 30% to about 35%.

[0024] In an embodiment, the flow rate of the first material flowing into the second chamber can be 50% or more of the flow rate of the second material flowing into the second chamber.

[0025] In an embodiment, the preset range of the pressure in the first chamber can be about 1.5 Torr to about 2.5 Torr.

[0026] In an embodiment, during the maintaining of the pressure in the first chamber in the preset range, the open area ratio of the pressure regulator can increase as the sum of the flow rate of the first material and the flow rate of the second material increases, and the open area ratio of the pressure regulator can decrease as the sum of the flow rate of the first material and the flow rate of the second material decreases. BRIEF DESCRIPTION OF DRAWINGS

[0027] The above and other features and advantages of exemplary embodiments of the present disclosure will be more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0028] Figure 1 is a sectional view of an embodiment of an apparatus for manufacturing a display device;

[0029] Figure 2 , Figure 3 , Figure 4 , Figure 5 , Figure 6 and Figure 7 is a sectional view of an embodiment of an apparatus for manufacturing a display device;

[0030] Figure 8 a bar chart showing the cleaning duration according to the opening ratio of the valve;

[0031] Figure 9 a bar chart showing the cleaning duration according to the injection flow rate of the first material;

[0032] Figure 10 a plan view of an embodiment of a display apparatus manufactured using an apparatus for manufacturing a display apparatus or a method of manufacturing a display apparatus; and

[0033] Figure 11 a cross-sectional view of an embodiment of a display apparatus manufactured using an apparatus for manufacturing a display apparatus or a method of manufacturing a display apparatus. DETAILED DESCRIPTION

[0034] Reference will now be made in detail embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the illustrated embodiments can have different forms but should not be construed as being limited to the description set forth herein. Accordingly, the embodiments are merely described below, by referring to the drawings, to explain aspects. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Throughout this disclosure, the expression "at least one of a, b, or c" indicates only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.

[0035] Since the present disclosure allows various changes and numerous embodiments, illustrative embodiments will be exemplified in the accompanying drawings and described in the written description. The effects and features of the present disclosure and methods of achieving them will be clarified by referring to the embodiments described below in detail with reference to the accompanying drawings. However, the present disclosure is not limited to the embodiments described below and can be embodied in various forms. Hereinafter, when described with reference to the drawings, the same or corresponding elements will be given the same reference numerals, and repetitive description thereof will be omitted. Although terms such as "first" and "second" can be used to describe various elements, the elements are not necessarily limited to the above terms. The above terms are used to distinguish one element from another element. The singular forms "a," "an," and "the" as used herein include plural referents unless the context clearly dictates otherwise. It will be understood that the terms "comprise," "comprising," "include," and / or "including" as used herein specify the presence of stated features or elements but do not preclude the addition of one or more other features or elements. It will be further understood that when a layer, region, or element is referred to as being "on" another layer, region, or element, it can be directly or indirectly on the other layer, region, or element. That is, for example, an intervening layer, region, or element can be present. For ease of explanation, the size of elements in the drawings can be exaggerated or reduced. As an example, the size and thickness of each element shown in the drawings are arbitrarily indicated, and thus the present disclosure is not necessarily limited thereto. In the case where the illustrative embodiments can be differently implemented, a specific process sequence can be performed in an order different from the described order. As an example, two processes described in succession can be performed substantially simultaneously, and in reverse order. In this specification, "A and / or B" means A or B, or A and B. In the specification, "at least one of A and B" means A or B, or A and B. The x-axis, y-axis, and z-axis are not limited to the three axes of a rectangular coordinate system, and can be interpreted in a broader sense. For example, the x-axis, y-axis, and z-axis can be perpendicular to each other, or can represent different directions that are not perpendicular to each other.

[0036] As used herein, "about" or "approximately" includes a recited value and means within an acceptable range of deviation of the particular value as determined by one of ordinary skill in the art to account for experimental error associated with a particular quantity measured, i.e., the limitations of a measurement system. For example, the term "about" can mean within one or more standard deviations, or within ± 30%, 20%, 10%, 5% of a recited value.

[0037] As used herein, terms such as "controller" are intended to refer to hardware components that perform predetermined functions. The hardware components can include circuits such as field-programmable gate arrays ("FPGAs") or application-specific integrated circuits ("ASICs").

[0038] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present disclosure and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0039] Figure 1 A cross-sectional view of an embodiment of an apparatus 100 for manufacturing a display device.

[0040] Reference Figure 1 The apparatus 100 for manufacturing a display device can include a first chamber 110, a second chamber 120, a shadow frame 130, a susceptor 140, a mask support 150, a deposition mask 160, a diffuser 170, a pressure regulator 180, and a controller 190.

[0041] A space (also referred to as an inner space) 110-1 can be defined in the first chamber 110, and although Figure 1 A portion of the first chamber 110 can be open, although not shown in FIG. 1. A gate valve can be installed in the open portion of the first chamber 110. In this case, the open portion of the first chamber 110 can be opened or closed according to the operation of the gate valve.

[0042] The second chamber 120 can be disposed outside the first chamber 110. In an embodiment, the second chamber 120 can be a remote plasma source chamber (“RPSC”). In an embodiment, the second chamber 120 can be a chamber that supplies plasma to the first chamber 110. In an embodiment, the second chamber 120 can be smaller in size than the first chamber 110. In an embodiment, the second chamber 120 can be connected to a injection pipe 121. In an embodiment, the injection pipe 121 can include a plurality of pipes and be connected to a plurality of sides of the second chamber 120. In an embodiment, some of the pipes of the injection pipe 121 can be connected to one side of the second chamber 120, and other pipes can be connected to another side of the second chamber 120. In an embodiment, a portion of the injection pipe 121 can connect the first chamber 110 to the second chamber 120. In an embodiment, a portion of the injection pipe 121 can connect the inner space 110-1 of the first chamber 110 to the inner space of the second chamber 120 through fluid communication.

[0043] A shielding frame 130 can be disposed inside the first chamber 110. The shielding frame 130 can hold the deposition mask 160 together with the mask support 150 therebetween to secure the deposition mask 160. The shielding frame 130 can define a hole overlapping the susceptor 140 at the center. The shielding frame 130 can be raised or lowered in the z-direction by a separate linear operator (not shown), and accordingly, the spacing between the shielding frame 130 and the mask support 150 can be adjusted. Figure 1 A case where the shielding frame 130 is lowered to contact the deposition mask 160 is shown.

[0044] A susceptor 140 can be disposed under the shielding frame 130 and the deposition mask 160. The susceptor 140 can support and heat a substrate during a deposition process. The susceptor 140 can include a separate heat source (not shown) that can heat a substrate disposed on its upper surface. The susceptor 140 can be connected to the first chamber 110 by a susceptor support 140-1. For example, the susceptor 140 can be raised or lowered in the z-direction by a linear operator (not shown) separately provided in the susceptor support 140-1.

[0045] A mask support 150 can be disposed between the shielding frame 130 and the susceptor 140. Like the shielding frame 130, the mask support 150 can have a hole at the center thereof. The hole of the shielding frame 130 and the hole of the mask support 150 can overlap the susceptor 140. The mask support 150 can be connected to a lifter 150-1 disposed thereunder. The mask support 150 can be raised or lowered in the z-direction by a linear operator separately provided in the lifter 150-1, and accordingly, the spacing between the shielding frame 130 and the mask support 150 can be adjusted. Thereby, the deposition mask 160 can be held between the shielding frame 130 and the mask support 150.

[0046] A deposition mask 160 can be disposed between the shielding frame 130 and the mask support 150 and held by the two elements. In addition, the deposition mask 160 is not always held by the shielding frame (also referred to as a shielding mask) 130 and the mask support 150. In an embodiment, the spacing between the shielding frame 130 and the mask support 150 can be adjusted to release the deposition mask 160. The deposition mask 160 can be externally loaded into the first chamber 110 and replaced. A plurality of holes 160H can be defined in the deposition mask 160, and the holes 160H can define areas in which a deposition material is deposited. The present disclosure is not necessarily limited to the configuration or size of the holes 160H of the deposition mask 160 shown in the drawings. Figure 1 The present disclosure is not necessarily limited to the configuration or size of the holes 160H of the deposition mask 160 shown in the drawings.

[0047] The diffuser 170 can be disposed to face the deposition mask 160 and the susceptor 140. In an embodiment, the diffuser 170 can receive the deposition material therein, or receive the deposition material from the outside. In an embodiment, the diffuser 170 can evaporate or sublimate the deposition material by applying heat to the deposition material. In an embodiment, the diffuser 170 can also receive the gaseous deposition material from the outside. In an embodiment, the diffuser 170 can also receive the material from the second chamber 120. In this case, the diffuser 170 can be connected to the second chamber 120 through the injection pipe 121. In an embodiment, the diffuser 170 can include a nozzle that diffuses the gaseous deposition material to the first chamber 110. The diffuser 170 can be fixed inside the first chamber 110, or disposed inside the first chamber 100 to linearly move in one direction. Hereinafter, for convenience of description, a case in which the diffuser 170 is disposed to be fixed inside the first chamber 110 will be mainly described in detail.

[0048] The pressure regulator 180 can be connected to the first chamber 110, and can regulate the internal pressure of the first chamber 110. In an embodiment, the pressure regulator 180 can regulate the internal pressure of the first chamber 110 to be equal to or approximately equal to the atmospheric pressure. In addition, the pressure regulator 180 can regulate the internal pressure of the first chamber 110 to be equal to or approximately equal to the vacuum state. The pressure regulator 180 can include a connection pipe 182 connected to the first chamber 110, a valve 181 installed in the connection pipe 182, and a pump (not shown). In this case, according to the operation of the pump, the outside air can be introduced through the connection pipe 182, or the gas inside the first chamber 110 can be leaked to the outside through the connection pipe 182. Hereinafter, a case in which the gas inside the first chamber 110 is leaked to the outside will be mainly described. In this case, the flow rate through the connection pipe 182 can be regulated according to the opening rate of the valve 181.

[0049] The controller 190 can control the elements of the apparatus 100 for manufacturing a display device. The controller 190 can include one system that controls a plurality of elements of the apparatus 100 for manufacturing a display device, or include a plurality of systems that individually control each of a plurality of elements of the apparatus 100 for manufacturing a display device. In an alternative embodiment, the controller 190 can include portions respectively connected to a plurality of elements of the apparatus 100 for manufacturing a display device, and one central control system. Hereinafter, a case in which the controller 190 includes a first controller 191 and a second controller 192, and the first controller 191 and the second controller 192 control the elements of the apparatus 100 for manufacturing a display device will be mainly described in detail. However, the present disclosure is not necessarily limited thereto.

[0050] The first controller 191 can be connected to the second chamber 120, and can control the second chamber 20 and the injection pipe 121. In an embodiment, the first controller 191 can control the flow rate of the material flowing into the second chamber 120. In an embodiment, the first controller 191 can be controlled to control the flow rate of the material flowing through the injection pipe 121.

[0051] The second controller 192 can be connected to the pressure regulator 180, and can control the valve 181 and / or the connection pipe 182 of the pressure regulator 180. In an embodiment, the second controller 192 can control the flow rate of the material leaking to the outside through the connection pipe 182 by controlling the opening rate of the valve 181. The pressure in the first chamber 110 can be controlled by the control of the first controller 191 and the second controller 192. The predetermined operations of the second chamber 120, the injection pipe 121, the connection pipe 182, and the valve 181 according to the control of the first controller 191 and the second controller 192 are described below.

[0052] Figures 2 to 7 A cross-sectional view showing an embodiment of each stage in a process of a method of manufacturing a display apparatus.

[0053] Referring to Figure 2 , a stage 0 (S0) including a deposition stage is shown.

[0054] First, when the pressure regulator 180 makes the internal pressure of the first chamber 110 equal to or approximate to the atmospheric pressure, a display substrate D can be loaded into the first chamber 110 from the outside. In this case, the display substrate D can be loaded into the first chamber 110 in various methods. In an embodiment, the display substrate D can be loaded into the inside of the first chamber 110 from the outside of the first chamber 110 by a mechanical arm provided outside the first chamber 110.

[0055] As shown, a deposition mask 160 can be provided in the first chamber 110. In an embodiment, the deposition mask 160 can be held between the shadow frame 130 and the mask support 150. In an embodiment, similar to the display substrate D, the deposition mask 160 can be loaded into the first chamber 110 from the outside of the first chamber 110. Hereinafter, for convenience of description, a case where only the display substrate D is loaded into the inside of the first chamber 110 from the outside of the first chamber 110 and the deposition mask 160 is provided inside the first chamber 110 is mainly described in detail.

[0056] When the display substrate D is loaded into the inside of the first chamber 110, the display substrate D can be seated on the susceptor 140. In this case, the positions of the display substrate D and the deposition mask 160 can be captured by a separately provided vision part (not shown), and the position of the display substrate D and / or the position of the deposition mask 160 can be finely adjusted. Thereby, the display substrate D and the deposition mask 160 can be aligned.

[0057] When the display substrate D is loaded into the first chamber 110, the deposition mask 160 can be held between the shielding frame 130 and the mask support 150. In an embodiment, the deposition mask 160 can be sufficiently separated from the susceptor 140 such that the display substrate D is disposed between the deposition mask 60 and the susceptor 140. To achieve this, the shielding frame 130 and the mask support 150 can also be sufficiently separated from the susceptor 140. The display substrate D is loaded into the first chamber 110, disposed between the deposition mask 160 and the susceptor 140, aligned with the deposition mask 150, and then the shielding frame 130, the mask support 150, and the deposition mask 60 can be lowered (alternatively, moved in the -z direction) as a whole. Accordingly, the deposition mask 160 can be closely attached to the display substrate D. In this case, the display substrate D can contact the upper surface of the susceptor 140.

[0058] Next, the pressure regulator 180 can maintain the pressure in the first chamber 100 at a state equal to or approximately a vacuum by discharging the gas in the first chamber 110 to the outside.

[0059] Next, a deposition phase can be performed. In an embodiment, the deposition phase can be performed using chemical vapor deposition ("CVD"). In this case, the diffuser 170 operates to diffuse a deposition material in a gas or vapor state into the first chamber 110.

[0060] Next, alternatively, a heat source (not shown) of the susceptor 140 can heat the susceptor 140 and substantially simultaneously heat the display substrate D in contact with the susceptor 140. In this case, a portion of the surface of the display substrate D overlapping the aperture 160H of the deposition mask 160 can contact the deposition material diffused in the first chamber 110 by the diffuser 170. The deposition material can cause a chemical reaction with or on the surface of the heated display substrate D and can form a layer on the display substrate D in an area overlapping the aperture 160H of the deposition mask 160. In this case, the deposition mask 160 can provide a deposition area equal to or similar to a predetermined deposition area. In an embodiment, the above-described operation can be repeatedly performed on a plurality of display substrates D.

[0061] After performing the deposition process, the deposited material that is completely diffused in the first chamber 110 can be deposited on the surface of the elements of the first chamber 110. In an embodiment, a portion of the deposited material can be deposited on the surface of the deposition mask 160, the shadow frame 130, the mask support 150, and / or the susceptor 140. When the gas in the first chamber 110 is removed through the pressure regulator 180, the deposited material does not flow out of the first chamber 110 but can remain on the surface of the elements in the first chamber 110, for example, in a solid state. Accordingly, a cleaning operation is required to remove the deposited material deposited from the first chamber 110. The cleaning operation can include a process of separating the deposited material from the surface of the elements in the first chamber 110 and discharging the deposited material outside the first chamber 110. In an embodiment, the cleaning operation can include a process of converting the solid state deposited material into a gas, inducing the flow of the deposited material, and making the deposited material flow out of the first chamber 110.

[0062] Hereinafter, the cleaning operation is described in detail with reference to Figures 3 to 7 the first stage S1 (refer to Figure 3 ) to the fifth stage S5 (refer to Figure 7 ).

[0063] With reference to Figure 3 , the first injection pipe 121-1 can be connected to one side of the second chamber 120. A material (for example, a predetermined material) can be injected into the second chamber 120 through the first injection pipe 121-1. In other words, the first injection pipe 121-1 can be an injection pipe facing the second chamber 120. The first gate 120-1 can be installed in a portion in which the first injection pipe 121-1 is connected to the second chamber 120. The flow of the material flowing into the second chamber 120 through the first injection pipe 121-1 can be controlled by the first gate 120-1. In an embodiment, the first gate 120-1 can be controlled by the first controller 191.

[0064] The second injection pipe 121-2 can be connected to the other side of the second chamber 120. A material (for example, a predetermined material) can be moved from the second chamber 120 to the first chamber 110 (refer to Figure 2 ) through the second injection pipe 121-2. In other words, the second injection pipe 121-2 can be an injection pipe facing the first chamber 110 (refer to Figure 2 ). The second gate 120-2 can be installed in a portion in which the second injection pipe 121-2 is connected to the second chamber 120. The flow of the material leaking (or flowing into the first chamber 110 (refer to Figure 2 )) from the second chamber 120 through the second injection pipe 121-2 can be controlled by opening / closing the second gate 120-2. In an embodiment, the second gate 120-2 can be controlled by the first controller 191.

[0065] The power supply portion 122 can apply electric current to the second chamber 120. In an embodiment, the power supply portion 122 can include any device capable of applying voltage, any type of switch, and a resistor disposed in the second chamber 120. The present disclosure is not necessarily limited thereto, and the power supply portion 122 can have any other configuration capable of applying electric current to the second chamber 120.

[0066] In the first stage SI, the first gate 120-1 is open, and the material can flow into the second chamber 120. In an embodiment, the first material Ml can flow through the first injection pipe 121-1, pass through the open first gate 120-1, and flow into the first chamber 110. In an embodiment, the second gate 120-2 can be in a closed state. In an embodiment, the power supply portion 122 can be in a non- operating state. In an embodiment, the first material Ml can include the first element El. In an embodiment, the first material Ml can include argon (Ar) gas. In an embodiment, the first element El can be argon (Ar). In an embodiment, the first controller 191 can control the flow rate of the first material Ml injected into the second chamber 120.

[0067] Referring to Figure 4 The second stage S2 can be performed. A sufficient amount of the first element El is disposed in the second chamber 120, and then the first gate 120-1 can be closed. In this case, the first controller 191 can block the flow of the material in the first injection pipe 121-1. Next, the power supply portion 122 can operate to apply energy to the first element El in the second chamber 120. In an embodiment, as shown in FIG. 2B, by closing the switch provided to the power supply portion 122, electric current can be transmitted into the second chamber 120, and by transmitting the electric current to the resistor provided in the second chamber 120, resistive heat can be substantially simultaneously delivered into the second chamber 120. The present disclosure is not necessarily limited to this method, and any suitable method that can apply energy to the first element El can be used. Figure 4

[0068] In an embodiment, at least a portion of the first element El can become a plasma state by the energy applied to the second chamber 120. In an embodiment, at least a portion of the first element El can become a radical, such as a first radical El'. In an embodiment, the first element El can be argon (Ar), and the first radical El' can be an argon (Ar) radical.

[0069] Referring to Figure 5 ​A third stage S3 can be performed. In the third stage S3, the first gate 120-1 is opened, and the material can flow into the second chamber 120. In an embodiment, the first material Ml and the second material M2 can flow through the first injection tube 121-1, pass through the opened first gate 120-1, and flow into the second chamber 120. In an embodiment, the second gate 120-2 can be in a closed state. In an embodiment, the first element El and the first radical El' can be present in the second chamber 120. The first material Ml and the second material M2 can flow into the second chamber 120 through separate tubes, respectively, or can be combined into one tube outside the second chamber 120 and then flow into the second chamber 120 at the same time. Hereinafter, for convenience of description, a case in which the first material Ml and the second material M2 are combined into one tube (e.g., the first injection tube 121-1) outside the second chamber 120 and then flow into the second chamber 120 at the same time will be mainly described.

[0070] The first controller 191 can control the flow rate of the first material Ml and the flow rate of the second material M2. In an embodiment, the first material Ml and the second material M2 can flow along separate tubes, respectively, and then the tubes can be combined in the first injection tube 121-1. In this case, the flow rate of the first material Ml and the flow rate of the second material M2 in the separate tubes can be controlled. Thereby, the ratio of the flow rate of the first material Ml to the flow rate of the second material M2 after being combined in the first injection tube 121-1 can be set. In an embodiment, the first controller 191 can control each of the absolute value of the flow rate of the first material Ml and the absolute value of the flow rate of the second material M2. In an embodiment, the first controller 191 can control the ratio of the flow rate of the first material Ml to the flow rate of the second material M2. In an embodiment, the flow rate of the first material Ml flowing into the second chamber 120 can be 50% or more of the flow rate of the second material M2 flowing into the second chamber 120. In an embodiment, the flow rate of the first material Ml flowing into the second chamber 120 can be about 50% of the flow rate of the second material M2 flowing into the second chamber 120. In an embodiment, the flow rate of the second material M2 can be about 32 liters per minute (L / min), and the flow rate of the first material Ml can be about 16 L / min.

[0071] As described above, the first material Ml can include the first element El. The second material M2 can include the second element E2. In an embodiment, the first material Ml and the second material M2 can be different from each other. In an embodiment, the first element El and the second element E2 can be different from each other. In an embodiment, the first material Ml can include argon (Ar) gas. In an embodiment, the first element El can be argon (Ar)-. In an embodiment, the second material M2 can include nitrogen trifluoride (NF3). In an embodiment, the second element E2 can be fluorine (F).

[0072] In the second chamber 120, the first material M1 (and the first element E1) and the second material M2 (and the second element E2) can undergo a reaction as described below. First, the first radical E1' can be formed through the second stage S2. In an embodiment, the first element E1 can be argon (Ar), and the first radical E1' can be an argon (Ar) radical. The first radical E1' can collide with the second material M2 or the second element E2 disposed in the second chamber 120 to generate a radical of the second element E2, i.e., the second radical E2'. In other words, the first radical E1' can dissociate the second element E2, and further, dissociate the second radical E2' from the second material M2. In an embodiment, the second element E2 can be fluorine (F), and the second radical E2' can be a fluorine (F) radical.

[0073] Although Figure 5 the first material M1 (and the first element E1) and the second material M2 (and the second element E2) flow into the second chamber 120 and the second radical E2' is generated substantially simultaneously, the present disclosure is not necessarily limited thereto. In an embodiment, after the first material M1 and the second material M2 are injected into the second chamber 120, the first gate 120-1 can be closed, and then the second radical E2' can be generated. In an embodiment, unlike the above-described embodiment, the power supply part 122 can work to additionally supply energy into the second chamber 120. Figure 5

[0074] Referring to Figure 6 , the fourth stage S4 can be performed. In the fourth stage S4, the first radical E1' and the second radical E2' formed through the above-described stages can be discharged from the second chamber 120. In an embodiment, for example, the second gate 120-2 can be opened, and the first radical E1' and the second radical E2' can flow toward the outside of the second chamber 120 through the second injection pipe 121-2 toward the first chamber 110 (refer to Figure 7 ). In an embodiment, the first gate 120-1 can be in a closed state.

[0075] Referring to Figure 7 , the fifth stage S5 can be performed. In the fifth stage S5, the first radical E1' and the second radical E2' generated in the second chamber 120 can be guided into the first chamber 110 through the injection pipe 121.

[0076] ​In an embodiment, the first radicals E1' and the second radicals E2' can be diffused into the first chamber 110 through the diffuser 170. In an embodiment, the first radicals E1' and the second radicals E2' can be introduced into the diffuser 170 through a path different from the path of the deposition material. In an embodiment, the first radicals E1' and the second radicals E2' can also be diffused into the first chamber 110 through any suitable diffusion means (not shown) other than the diffuser 170.

[0077] A third material M3 can exist in the first chamber 110. The third material M3 can be a reference Figure 2 The deposition material described above is retained in the first chamber 110. In the first chamber 110, the following reaction can occur.

[0078] First, the second radicals E2' flowing into the first chamber 110 can react with the third material M3 to produce a fourth material M4. In an embodiment, the third material M3 can be in a solid state, and the fourth material M4 can be in a gaseous state. Because the third material M3 cannot flow, the third material M3 can not be discharged out of the first chamber 110 despite the operation of the pressure regulator 180. In contrast, because the fourth material M4 can flow, the fourth material M3 can be discharged from the first chamber 110 when the pressure regulator 180 operates. The process of reacting the second radicals E2' with the third material M3 to produce the fourth material M4 and then discharging the fourth material M4 out of the first chamber 110 can be understood as a cleaning process.

[0079] In an embodiment, the second radicals E2' can be fluorine (F) radicals. In an embodiment, the third material M3 can include silicon nitride (SiNx) or silicon oxynitride (SiON). In an embodiment, the fourth material M4 can include silicon tetrafluoride (SiF4). In an embodiment, the fourth material M4, as well as additional generated oxygen and / or nitrogen, can be discharged out of the first chamber 110 by the operation of the pressure regulator 180. In an embodiment, the fourth material M4 can flow around the shadow frame 130, the susceptor 140, and / or the mask support 150. In an embodiment, when the fourth material M4 is discharged out of the first chamber 110 by the operation of the pressure regulator 180, a portion of the first radicals E1' and / or the second radicals E2' can also be discharged out of the first chamber 110.

[0080] A portion of the second radicals E2' existing in the first chamber 110 can recombine with other second radicals E2'. In this case, because the number of the second radicals E2' that produce the fourth material M4 by reacting with the third material M3 can decrease, the cleaning process can be delayed. To prevent this, the first radicals E1' can be injected together when the second radicals E2' are injected into the first chamber 110. With reference to the above description, the first radicals E1' can be injected into the first chamber 110 through the diffuser 170 or any suitable diffusion means (not shown) other than the diffuser 170. Figure 5The same description applies even in the first chamber 110, that is, the first radical E1' can generate the second radical E2'. In an embodiment, the first radical E1' can dissociate the recombined second radical E2' again to generate the separated second radical E2'. In this way, since the second radical E2' can be prevented from recombining in the first chamber 110, a delay of the cleaning process can be prevented.

[0081] In the above process, the second controller 192 can control the pressure regulator 180. In an embodiment, the second controller 192 can control the flow rate of the material discharged from the first chamber 110 by controlling the opening rate of the valve 181 of the pressure regulator 180. Hereinafter, the opening rate can mean a percentage of the flow rate that can flow through the valve 181 when the valve 181 is partially opened (or partially closed) compared to the maximum flow rate that can flow through the valve 181 when the valve 181 is fully opened. The present disclosure is not necessarily limited to this definition, and the opening rate can mean various other indicators indicating the degree of opening of the valve 181. In an embodiment, the opening rate can mean a percentage of the area through which the fluid can pass with respect to the area of the cross section cut perpendicular to the extension direction of the valve.

[0082] In an embodiment, the opening rate of the valve 181 of the pressure regulator 180 can be about 30% to about 40%. In an embodiment, the opening rate of the valve 181 of the pressure regulator 180 can be about 30% to about 35%. In an embodiment, the opening rate of the valve 181 of the pressure regulator 180 can be about 30% to about 32.5%. In an embodiment, the opening rate of the valve 181 of the pressure regulator 180 can be about 30%.

[0083] The first stage S1 (refer to Figure 3 ) to the fifth stage S5 (refer to Figure 7 ) can be substantially continuously performed. Accordingly, in the fifth stage S5, during the period of cleaning the inside of the first chamber 110, the first material M1 including the first element E1 and the second material M2 including the second element E2 can be supplied to the second chamber 120. As with reference Figure 5 The same description applies even in the first chamber 110, that is, the first radical E1' can generate the second radical E2'. In an embodiment, the first radical E1' can dissociate the recombined second radical E2' again to generate the separated second radical E2'. In this way, since the second radical E2' can be prevented from recombining in the first chamber 110, a delay of the cleaning process can be prevented.

[0084] The flow rate of the material injected into the second chamber 120 and further injected into the first chamber 110 can be controlled by the first controller 191. The flow rate of the material flowing out from the first chamber 110 to the outside can be controlled by the second controller 192. Accordingly, the amount of the material (e.g., gas) present in the first chamber 110 at a predetermined time can be controlled by the first controller 191 and the second controller 192 or by the controller 190, and accordingly, the internal pressure 110P of the first chamber 110 can be controlled.

[0085] In an embodiment, as the flow rate of the first material M1 or the flow rate of the second material M2 increases, i.e., as the sum of the flow rate of the first material M1 and the flow rate of the second material M2 increases, the internal pressure 110P of the first chamber 110 can increase. In an embodiment, as the opening ratio of the valve 181 increases, the internal pressure 110P of the first chamber 110 can decrease. In an embodiment, by increasing the opening ratio of the valve 181 as the sum of the flow rate of the first material M1 and the flow rate of the second material M2 increases, and by decreasing the opening ratio of the valve 181 as the sum of the flow rate of the first material M1 and the flow rate of the second material M2 decreases, the internal pressure 110P of the first chamber 110 can be maintained within a preset range. In an embodiment, by increasing the sum of the flow rate of the first material M1 and the flow rate of the second material M2 as the opening ratio of the valve 181 increases, and by decreasing the sum of the flow rate of the first material M1 and the flow rate of the second material M2 as the opening ratio of the valve 181 decreases, the internal pressure 110P of the first chamber 110 can be maintained within a preset range. In an embodiment, the above control process can be performed by the first controller 191 and the second controller 192 or by the controller 190. In an embodiment, the internal pressure 110P of the first chamber 110 can be maintained at about 1.5 Torr to about 2.5 Torr.

[0086] The duration required to completely remove the third material M3 in the first chamber 110 can be defined as a cleaning duration.

[0087] One method of shortening the cleaning duration is to inject the first radicals E1’ together with the second radicals E2’. By injecting the first radicals E1’, recombination of the second radicals E2’ can be prevented. Accordingly, by increasing the duration when the second radicals E2’ exist in the first chamber 110 in a radical state, the cleaning duration can be shortened.

[0088] Another method of shortening the cleaning duration is to increase the duration that the second radicals E2’ remain in the first chamber 110 before being discharged to the outside through the pressure regulator 180. The duration that the second radicals E2’ remain in the chamber can be represented by Equation 1 below.

[0089] < Equation 1 >

[0090]

[0091] In explaining Equation 1, the chamber can represent the first chamber 110. In Equation 1, τ represents the chamber retention duration (e.g., the duration that the second radical E2' is retained in the chamber), and has units of seconds (sec). P represents the internal pressure of the chamber, and has units of Torr. In an embodiment, P can be the internal pressure 110P of the first chamber 110. V is the volume of the internal space of the chamber, and has units of L. Q is a parameter used to describe flow rate, and has units of Torr x L / sec.

[0092] The present disclosure features increasing the chamber retention duration τ by increasing the internal pressure P of the chamber. In an embodiment, when the flow rate of the first material Ml flowing into the second chamber 120 is set to be about 0, the flow rate of the second material M2 is set to be about 32 L / min, and the open area ratio of the valve 181 of the pressure regulator 180 is set to be about 100%, P can be about 0.6 Torr. In an embodiment, when the flow rate of the first material Ml flowing into the second chamber 120 is set to be about 16 L / min, the flow rate of the second material M2 is set to be about 32 L / min, and the open area ratio of the valve 181 of the pressure regulator 180 is set to be about 30%, P can be about 2.0 Torr. The value of τ when P is 2.0 Torr can be greater than when P is 0.6 Torr, and the cleaning duration can be correspondingly shorter.

[0093] As mentioned above, the flow rate of the material flowing into the second chamber 120 can be controlled by the first controller 120, and the open area ratio of the valve 181 can be controlled by the second controller 192. In this way, the chamber retention duration τ can be controlled, and ultimately, the cleaning duration can be controlled. Accordingly, among various combinations of the flow rate of the material flowing into the second chamber 120 and the open area ratio of the valve 181, an optimized combination that reduces the cleaning duration can be found. Reference is made to Figure 8 and Figure 9 The optimized combination is described in detail.

[0094] Figure 8 A bar graph is shown to illustrate the cleaning duration according to the open area ratio of the valve 181. Figure 9 A bar graph is shown to illustrate the cleaning duration according to the injection flow rate of the first material Ml.

[0095] Reference is made to Figure 8 The x-axis of the graph represents the open area ratio of the valve 181, and is expressed as a percentage (%). The y-axis of the graph represents the cleaning duration, and has units of sec. The flow rate of the first material Ml (reference Figure 7 ) can be about 16 L / min, and the flow rate of the second material M2 (reference Figure 7The flow rate of the first material M1 can be about 32 L / min.

[0096] When the opening rate is about 100%, the cleaning duration can be about 800 sec. When the opening rate is about 70%, the cleaning duration can be about 700 sec. When the opening rate is about 50%, the cleaning duration can be about 680 sec. When the opening rate is about 30%, the cleaning duration can be about 630 sec. When the opening rate is about 20%, the cleaning duration can be about 680 sec. As the opening rate decreases, the cleaning duration gradually decreases, and then increases again at about 20%. Accordingly, the cleaning duration is the shortest when the opening rate is close to about 30%.

[0097] Referring to FIG. 8, Figure 9 , the x-axis of the graph is the flow rate of the first material M1, and has units of L / min. The y-axis of the graph represents the cleaning duration, and has units of sec. The flow rate of the second material M2 (referring to Figure 7 ) is about 32 L / min, and the opening rate of the valve 181 can be about 30%.

[0098] When the flow rate of the first material M1 is about 0, the cleaning duration can be about 800 sec. When the flow rate of the first material M1 is about 4 L / min, i.e., about 12.5% of the flow rate of the second material M2 (referring to Figure 7 ), the cleaning duration can be about 800 sec. When the flow rate of the first material M1 is about 8 L / min, i.e., about 25% of the flow rate of the second material M2 (referring to Figure 7 ), the cleaning duration can be about 800 sec. When the flow rate of the first material M1 is about 16 L / min, i.e., about 50% of the flow rate of the second material M2 (referring to Figure 7 ), the cleaning duration can be about 750 sec. When the flow rate of the first material M1 is about 24 L / min, i.e., about 75% of the flow rate of the second material M2 (referring to Figure 7 ), the cleaning duration can be about 750 sec. When the flow rate of the first material M1 exceeds 50% of the flow rate of the second material M2 (referring to Figure 7 ), the cleaning duration is shortened, and is not affected even when the flow rate of the first material M1 is further increased thereafter.

[0099] Referring to FIG. 8, Figure 7 , Figure 8 and Figure 9 , the cleaning duration is the shortest when the flow rate of the first material M1 is 50% or more of the flow rate of the second material M2, and the opening rate of the valve 181 is close to about 30%.

[0100] Figure 10A plan view of an embodiment of a display device manufactured using an apparatus for manufacturing a display device or a method of manufacturing a display device. Figure 11 A cross-sectional view of an embodiment of a display device 20 manufactured using an apparatus for manufacturing a display device or a method of manufacturing a display device.

[0101] Referring to Figure 10 and Figure 11 , the display device 20 can define a display area DA and a non-display area NDA outside the display area DA on the substrate 21. Light emitting elements LED can be disposed in the display area DA, and a power supply wiring (not shown) or the like can be disposed in the non-display area NDA. In addition, a pad portion (not shown) can be disposed in the non-display area NDA. A plurality of deposition material patterns can be disposed in the display area DA.

[0102] The display device 20 can include a display substrate D and a thin film encapsulation layer TFE disposed on the display substrate D. The display substrate D can include the substrate 21, a thin film transistor TFT, a via layer 28, and a light emitting element LED.

[0103] The substrate 21 can include a plastic material or a metal material. In addition, the substrate 21 can include polyimide. The thin film transistor TFT can be disposed on the substrate 21, the via layer 28 can be disposed to cover the thin film transistor TFT, and the light emitting element LED can be disposed on the via layer 28.

[0104] A buffer layer 22 including an organic compound and / or an inorganic compound can be further disposed on an upper surface of the substrate 21. The buffer layer 22 can include or consist of SiOx(x≥1) and / or SiNx(x≥1).

[0105] An active layer 23 disposed in a predetermined pattern can be disposed on the buffer layer 22, and then, the active layer 23 can be buried by a gate insulating layer 24. The active layer 23 can include a source region and a drain region and further include a channel region therebetween. The active layer 23 can be formed to include or consist of various materials. In an embodiment, the active layer 23 can include or consist of an inorganic semiconductor material such as amorphous silicon or crystalline silicon. In another embodiment, the active layer 23 can include or consist of an oxide semiconductor. In another embodiment, the active layer 23 can include or consist of an organic semiconductor material. Hereinafter, for convenience of description, a case in which the active layer 23 includes amorphous silicon will be mainly described in detail.

[0106] The active layer 23 can be formed by forming an amorphous silicon layer on the buffer layer 22, then crystallizing the amorphous silicon to form a polysilicon layer, and patterning the polysilicon layer. The source region and the drain region of the active layer 23 can be doped with impurities according to a kind of thin film transistor such as a driving thin film transistor or a switching thin film transistor.

[0107] An interlayer insulating layer 26 corresponding to the gate electrode 25 and the buried gate electrode 25 can be disposed on the upper surface of the gate insulating layer 24. A contact hole is defined in the interlayer insulating layer 26 and the gate insulating layer 24, and then a source electrode 271 and a drain electrode 272 can be disposed on the interlayer insulating layer 26 to contact the source region and the drain region of the active layer 23, respectively.

[0108] A via layer 28 can be disposed on the thin film transistor TFT, and a pixel electrode 301 of the light emitting element LED can be disposed on the via layer 28. The via layer 28 can include a first via layer 281 and a second via layer 282 on the first via layer 281, and the first via layer 281 buries the source electrode 271 and the drain electrode 272. The via layer 28 (e.g., the first via layer 281 and the second via layer 282) can include an inorganic material and / or an organic material, can be formed as a planarization layer such that its upper surface is flat regardless of the curvature of the underlying layer, or is curved along the curvature of the underlying layer.

[0109] A via can be defined in the first via layer 281, and at least a portion of a contact metal CM can be disposed in the via of the first via layer 281. A via can also be defined in the second via layer 282, and a portion of the pixel electrode 301 can be disposed in the via of the second via layer 282. The pixel electrode 301 contacts the drain electrode 272 of the thin film transistor TFT through the via defined in the via layer 28. In an embodiment, the contact metal CM can contact the drain electrode 272 through the via defined in the first via layer 281, and the pixel electrode 301 contacts the contact metal CM through the via defined in the second via layer 282, and thus is connected to the drain electrode 272.

[0110] The pixel electrode 301 is disposed on the via layer 28, and then a pixel defining layer 29 can include an organic material and / or an inorganic material to cover the pixel electrode 301 and the via layer 28. The pixel defining layer 29 can be open to expose a portion of the pixel electrode 301.

[0111] An intermediate layer 302 and a counter electrode 303 are disposed on the pixel electrode 301. In an embodiment, the counter electrode 303 can be disposed on the intermediate layer 302 and the pixel defining layer 29. The pixel electrode 301 can function as an anode electrode, and the counter electrode 303 can function as a cathode electrode. The polarity of the pixel electrode 301 and the counter electrode 303 can be reversed. The pixel electrode 301 and the counter electrode 303 can be insulated from each other by the intermediate layer 302, and emit light from the organic emission layer by applying voltages of different polarities to the intermediate layer 302.

[0112] The intermediate layer 302 can include an organic emission layer. In another embodiment, the intermediate layer 302 can include an organic emission layer, and further include at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer in addition to the organic emission layer. Embodiments are not necessarily limited thereto, and the intermediate layer 302 can include an organic emission layer, and further include various other layers (not shown).

[0113] One unit pixel includes a plurality of sub-pixels, and the plurality of sub-pixels can emit light of various colors. In an embodiment, the plurality of sub-pixels can include sub-pixels that respectively emit red light, green light, and blue light, or include sub-pixels that respectively emit red light, green light, blue light, and white light (not shown). The sub-pixels can include one intermediate layer 302.

[0114] A thin film encapsulation layer TFE can be provided to cover the light emitting element LED. The thin film encapsulation layer TFE can include a plurality of inorganic layers, or include inorganic layers and organic layers. The inorganic layer of the thin film encapsulation layer TFE can be a single layer or a stacked layer including a metal oxide or a metal nitride. In an embodiment, the inorganic layer can include one of SiNx, Al2O3, SiO2, and TiO2. The organic layer of the thin film encapsulation layer TFE can include a polymer, and can be a single layer or a stacked layer including one of, for example, polyethylene terephthalate, polyimide, polycarbonate, epoxy, polyethylene, and polyacrylate. In an embodiment, the uppermost layer 313 of the thin film encapsulation layer TFE exposed to the outside can include an inorganic layer to prevent moisture from being transmitted to the light emitting element. The thin film encapsulation layer TFE can be formed by the apparatus for manufacturing a display device or the method of manufacturing a display device described above. In an embodiment, each of the lowermost layer 311 and the intermediate layer 312 of the thin film encapsulation layer TFE can be, for example, an organic layer or an inorganic layer.

[0115] In an embodiment, the flow rate of each of the first material and the second material flowing into the second chamber can be controlled, the flow rate of the gas flowing out of the first chamber to the outside can be controlled, the pressure in the first chamber can be controlled, and thus, the duration for which the cleaning material (e.g., radicals of the first element and radicals of the second element) remains within the first chamber can be increased. Accordingly, the time required to clean the inside of the first chamber can be reduced.

[0116] It is to be understood that the embodiments described herein are to be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should typically be considered as being applicable to other similar features or aspects in other embodiments. While embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and details can be made therein without departing from the spirit and scope as defined by the following claims.

Claims

1. An apparatus for manufacturing a display device, characterized by comprising: The apparatus includes: a first chamber; a second chamber connected to the first chamber; a first controller configured to control the second chamber; a pressure regulator connected to the first chamber; and a second controller configured to control the pressure regulator, wherein the first controller is configured to control at least one of a flow rate of a first material flowing into the second chamber and a flow rate of a second material flowing into the second chamber during execution of a cleaning process of the first chamber, and the second controller is configured to control an orifice ratio of the pressure regulator and to maintain a pressure in the first chamber within a preset range during execution of the cleaning process of the first chamber.

2. The apparatus of claim 1, wherein, The first material includes a first element, and the apparatus for manufacturing the display apparatus generates first radicals of the first element by applying energy to the first material in the second chamber.

3. The apparatus of claim 2, wherein, The first element is argon.

4. The apparatus of claim 2, wherein, The second material includes a second element, and the apparatus for manufacturing the display apparatus generates second radicals of the second element from the first radicals of the first element in the second chamber.

5. The apparatus of claim 4, wherein, The second element is fluorine.

6. The apparatus of claim 4, wherein, The first radicals of the first element and the second radicals of the second element generated in the second chamber are injected into the first chamber.

7. The apparatus of claim 1, wherein, The orifice ratio of the pressure regulator is 30% to 35%.

8. The apparatus of claim 1, wherein, The flow rate of the first material flowing into the second chamber is 50% or more of the flow rate of the second material flowing into the second chamber.

9. The apparatus of claim 1, wherein, The preset range of the pressure in the first chamber is 1.5 Torr to 2.5 Torr.

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