Semiconductor refrigeration device based on aluminum substrate
By using a mirrored aluminum substrate and an optimized layered structure design, the problems of low heat dissipation efficiency and high cost of aluminum substrate semiconductor cooling devices are solved, achieving efficient heat dissipation and low-cost cooling effects.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-10
- Publication Date
- 2026-04-03
AI Technical Summary
Traditional aluminum-based semiconductor cooling devices suffer from problems such as complex structural design, low heat dissipation efficiency, and high manufacturing costs.
The first and second aluminum substrates are arranged in a mirror image. The design combines a substrate layer, an insulating layer and a conductive layer. The aluminum substrate has high thermal conductivity and mechanical strength. Multiple sets of semiconductor cooling elements are connected in series or parallel to optimize the structure to improve heat dissipation performance and cooling capacity.
It achieves efficient heat dissipation, good structural stability and low cost semiconductor cooling effect. The overall structure is simple, the manufacturing process is mature and the production cost is reduced.
Smart Images
Figure CN224080434U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of semiconductor refrigeration, and relates to a semiconductor refrigeration device, and more particularly to a semiconductor refrigeration device based on an aluminum substrate. Background Technology
[0002] Semiconductor cooling devices are based on the Peltier effect, utilizing the temperature difference between the hot and cold ends of N-type and P-type semiconductor cooling elements when energized to achieve cooling or heating functions. Traditional semiconductor cooling devices typically use ceramic substrates as the support and conductive structure; however, ceramic substrates have limitations in terms of thermal conductivity, mechanical strength, and processing costs. Aluminum substrates, as a novel substrate material, possess excellent thermal conductivity, mechanical strength, and low manufacturing costs, making them promising candidates for semiconductor cooling devices. Currently, aluminum-based semiconductor cooling devices suffer from complex structural designs, low heat dissipation efficiency, and high manufacturing costs. Therefore, there is an urgent need for a simple, high-performance, and low-cost aluminum-based semiconductor cooling device. Utility Model Content
[0003] In order to solve the above-mentioned technical problems in the background art, the present invention provides a semiconductor cooling device based on an aluminum substrate that can improve cooling efficiency, heat dissipation performance and manufacturing cost.
[0004] To achieve the above objectives, the present invention adopts the following technical solution:
[0005] A semiconductor cooling device based on an aluminum substrate is characterized in that: the semiconductor cooling device based on an aluminum substrate includes a first aluminum substrate, a second aluminum substrate, and a semiconductor cooling element group; the first aluminum substrate and the second aluminum substrate are arranged in a mirror image; the semiconductor cooling element group is placed between the first aluminum substrate and the second aluminum substrate and is respectively connected to the first aluminum substrate and the second aluminum substrate.
[0006] Preferably, the structure of the first aluminum substrate is exactly the same as that of the second aluminum substrate.
[0007] Preferably, the first aluminum substrate is provided with a substrate layer, an insulating layer and a conductive layer in sequence from bottom to top; the semiconductor cooling element group is connected to the conductive layer.
[0008] Preferably, the substrate layer is an aluminum alloy layer.
[0009] Preferably, the insulating layer is an aluminum oxide layer or an aluminum nitride layer.
[0010] Preferably, the conductive layer is a copper foil layer or a silver paste layer.
[0011] Preferably, the aluminum substrate-based semiconductor cooling device further includes wires; there are two wires, the first wire is connected to the conductive layer of the first aluminum substrate; the second wire is connected to the conductive layer of the second aluminum substrate; the wires are copper wires or silver wires.
[0012] Preferably, the end of the wire connected to the conductive layer is provided with a gold-plated coating.
[0013] Preferably, the semiconductor cooling element group includes one or more groups of semiconductor cooling elements, and when there are multiple groups of semiconductor cooling elements, the multiple groups of semiconductor cooling elements are connected in series.
[0014] Preferably, the semiconductor cooling element includes an N-type semiconductor element and a P-type semiconductor element connected in series with the N-type semiconductor element.
[0015] Funding support for this utility model patent application:
[0016] Young Scientists Fund Project: Optimization and Mechanism Study of Photovoltaic Effect of BiFeO3 Ferroelectric Thin Films, No.: 11604089;
[0017] Horizontal Project: Research on the Integration of Ferroelectric Thin Films and Crystalline Silicon Solar Cells, Project No.: JJH2019038.
[0018] It is the application and methodological verification of the theoretical results of the phased research.
[0019] Compared with the prior art, the advantages and beneficial effects of this utility model are as follows:
[0020] This invention provides a semiconductor cooling device based on an aluminum substrate, comprising a first aluminum substrate, a second aluminum substrate, and a semiconductor cooling element assembly. The first and second aluminum substrates are mirror images of each other. The semiconductor cooling element assembly is placed between the first and second aluminum substrates and connected to both substrates. This invention improves the heat dissipation efficiency and structural stability of the device by using an aluminum substrate instead of a traditional ceramic substrate, leveraging the high thermal conductivity and mechanical strength of the aluminum substrate. Optimizing the layered structure design of the aluminum substrate (substrate layer, insulating layer, conductive layer) achieves efficient electrical insulation and thermal conduction. The series or parallel connection of multiple semiconductor cooling elements enhances the device's cooling capacity and facilitates adjustment of cooling power according to actual needs. The aluminum substrate-based semiconductor cooling device provided by this invention has a simple overall structure, mature manufacturing process, reduced production costs, and promising market application prospects. Attached Figure Description
[0021] Figure 1 This is a schematic diagram of the overall structure of the semiconductor cooling device based on an aluminum substrate provided by this utility model;
[0022] Figure 2 This is a schematic diagram of the layered structure of the aluminum substrate used in this utility model;
[0023] Figure 3 This is a cross-sectional view of the semiconductor cooling device based on an aluminum substrate provided by this utility model.
[0024] The annotations in the attached figures are explained as follows:
[0025] 1-First aluminum substrate; 11-Substrate layer; 12-Insulating layer; 13-Conductive layer; 2-Second aluminum substrate; 3-Semiconductor cooling element assembly; 4-Wire. Detailed Implementation
[0026] See Figure 1 as well as Figure 3 The present invention provides a semiconductor cooling device based on an aluminum substrate, including a first aluminum substrate 1, a second aluminum substrate 2 and a semiconductor cooling element group 3; the first aluminum substrate 1 and the second aluminum substrate 2 are arranged in a mirror image; the semiconductor cooling element group 3 is placed between the first aluminum substrate 1 and the second aluminum substrate 2 and is connected to the first aluminum substrate 1 and the second aluminum substrate 2 respectively.
[0027] The structure of the first aluminum substrate 1 is exactly the same as the structure of the second aluminum substrate 2. (See also...) Figure 2 as well as Figure 3 The first aluminum substrate 1 used in this invention comprises, from bottom to top, a substrate layer 11, an insulating layer 12, and a conductive layer 13. Exemplarily, the substrate layer 11 can be disposed using existing technologies such as direct bonding. The semiconductor cooling element assembly 3 is connected to the conductive layer 13. The substrate layer 11 is made of a high thermal conductivity aluminum alloy material and is used to protect and support the internal structure. Exemplarily, the substrate layer 11 can be a layered structure formed of aluminum alloy, i.e., an aluminum alloy layer. The insulating layer 12 is made of a high thermal conductivity insulating material to achieve insulation between the substrate layer 11 and the conductive layer 13, i.e., to improve thermal conductivity while ensuring insulation performance. Exemplarily, it can be an aluminum oxide layer or an aluminum nitride layer. The conductive layer 13 is formed with conductive lines through etching or printing processes to improve current transmission efficiency. Exemplarily, the conductive layer 13 can be a copper foil layer or a silver paste layer. Taking the conductive layer 13 as an example, the conductive lines are formed through etching to provide a current conduction path for the semiconductor cooling element 3.
[0028] The aluminum substrate-based semiconductor cooling device also includes two wires 4. The first wire 4 is connected to the conductive layer 13 of the first aluminum substrate 1, and the second wire 4 is connected to the conductive layer of the second aluminum substrate 2. The wires 4 can be high-conductivity copper or silver wires, serving as positive and negative power supply wires for the semiconductor cooling element assembly 3. It should be noted that both the first and second wires include a connecting end and a floating end. The connecting end is provided with a gold-plated coating to reduce contact resistance; the floating end is used to connect to the power supply.
[0029] See Figure 1 as well as Figure 3 The semiconductor cooling element group 3 used in this invention includes one or more groups of semiconductor cooling elements. When there are multiple groups of semiconductor cooling elements, the multiple groups of semiconductor cooling elements are connected in series. Each group of semiconductor cooling elements includes an N-type semiconductor element and a P-type semiconductor element connected in series with the N-type semiconductor element. For example, the multiple groups of semiconductor cooling elements can be placed between the first aluminum substrate 1 and the second aluminum substrate 2 using conventional welding methods. For example, welding can be performed using methods including, but not limited to, tin soldering, silver soldering, or laser welding. Regardless of the welding method, these are existing and very mature technologies, and will not be elaborated further here. The purpose of welding is to ensure the mechanical strength and electrical performance of the connection.
Claims
1. A semiconductor cooling device based on an aluminum substrate, characterized in that: The semiconductor cooling device based on an aluminum substrate includes a first aluminum substrate (1), a second aluminum substrate (2), and a semiconductor cooling element group (3); the first aluminum substrate (1) and the second aluminum substrate (2) are mirror images of each other; the semiconductor cooling element group (3) is placed between the first aluminum substrate (1) and the second aluminum substrate (2) and is connected to the first aluminum substrate (1) and the second aluminum substrate (2) respectively.
2. The semiconductor cooling device based on an aluminum substrate according to claim 1, characterized in that: The structure of the first aluminum substrate (1) is exactly the same as that of the second aluminum substrate (2).
3. The semiconductor cooling device based on an aluminum substrate according to claim 2, characterized in that: The first aluminum substrate (1) is provided with a substrate layer (11), an insulating layer (12) and a conductive layer (13) from bottom to top; the semiconductor cooling element group (3) is connected to the conductive layer (13).
4. The semiconductor cooling device based on an aluminum substrate according to claim 3, characterized in that: The substrate layer (11) is an aluminum alloy layer.
5. The semiconductor cooling device based on an aluminum substrate according to claim 4, characterized in that: The insulating layer (12) is an aluminum oxide layer or an aluminum nitride layer.
6. The semiconductor cooling device based on an aluminum substrate according to claim 5, characterized in that: The conductive layer (13) is a copper foil layer or a silver paste layer.
7. The semiconductor cooling device based on an aluminum substrate according to claim 6, characterized in that: The semiconductor cooling device based on the aluminum substrate further includes a wire (4); the wire (4) consists of two wires, the first wire (4) is connected to the conductive layer (13) of the first aluminum substrate (1); the second wire (4) is connected to the conductive layer of the second aluminum substrate (2); the wire (4) is a copper wire or a silver wire.
8. The semiconductor cooling device based on an aluminum substrate according to claim 7, characterized in that: The end of the wire (4) connected to the conductive layer (13) is provided with a gold-plated coating.
9. The semiconductor cooling device based on an aluminum substrate according to any one of claims 1-8, characterized in that: The semiconductor refrigeration element group (3) includes one or more groups of semiconductor refrigeration elements. When there are multiple groups of semiconductor refrigeration elements, the multiple groups of semiconductor refrigeration elements are connected in series.
10. The semiconductor cooling device based on an aluminum substrate according to claim 9, characterized in that: The semiconductor cooling element includes an N-type semiconductor element and a P-type semiconductor element connected in series with the N-type semiconductor element.