Power supply network structure, chip and electronic equipment

Abstract

The utility model provides a power network structure, a chip and electronic equipment, and relates to the technical field of chip design. The power network structure comprises a top metal layer, a bottom metal layer and K intermediate metal layers, the bottom metal layer comprises 2N first metal wires arranged along a first direction; the top metal layer comprises a power supply metal wire and a grounding metal wire, and the K middle metal layers comprise a first metal layer and a second metal layer which are sequentially overlapped; odd-numbered layers in the K intermediate metal layers are first metal layers, and even-numbered layers in the K intermediate metal layers are second metal layers. The first metal layer comprises 2M third metal wires which are arranged in parallel along the second direction; the second metal layer comprises 2J fourth metal wires which are arranged in parallel along the first direction; wherein the projection of the J fourth metal wires on the bottom metal layer covers the projection of at least one first through hole tower on the bottom metal layer; the projection of the other J fourth metal wires on the bottom metal layer covers the projection of at least one second through hole tower on the bottom metal layer.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of chip design, in particular to a power network structure, a chip and an electronic device. BACKGROUND

[0002] With the process of integrated circuits entering the deep submicron stage, due to the reduction of process size, the further shortening of channel length, the fin type field effect tube process has become the mainstream design below 14nm. This type of process often has the characteristics that the bottom device and metal wire process size are small, and the middle and upper metal layers use relatively large process size.

[0003] Under this process, the top metal layer and the bottom metal layer in the power network architecture usually adopt a grid design method. But this method will make the resistance between the top metal layer and the bottom metal layer larger, and the current density will be higher. CONTENT OF THE UTILITY MODEL

[0004] The present application provides a power network structure, a chip and an electronic device to reduce the resistance between the top metal layer and the bottom metal layer, and reduce the current density.

[0005] In a first aspect, the present application provides a power supply network structure, comprising: a top metal layer, a bottom metal layer, and K intermediate metal layers; the bottom metal layer comprises a plurality of bottom metal layer patterns, each bottom metal layer pattern comprises 2N first metal lines arranged in parallel along a first direction, each first metal line is arranged on a winding track, and adjacent two first metal lines are separated by n winding tracks; wherein N first metal lines of the 2N first metal lines are power lines, and the other N first metal lines are ground lines, and the N power lines are adjacent, and the N ground lines are adjacent; N and n are positive integers; the top metal layer comprises a power metal line and a ground metal line, wherein the power metal line is connected to the adjacent N power lines in the bottom metal layer through a first via tower, and the ground metal line is connected to the adjacent N ground lines in the bottom metal layer through a second via tower; each first via tower and each second via tower comprises a via in different layers whose projections in the bottom metal layer are located in the same region; the K intermediate metal layers comprise a first metal layer and a second metal layer arranged in sequence and overlapping each other; taking the intermediate metal layer closest to the bottom metal layer as the starting point, the odd layers in the K intermediate metal layers are the first metal layer, and the even layers are the second metal layer; the first metal layer comprises 2M third metal lines arranged in parallel along a second direction; wherein the projections of M third metal lines in the bottom metal layer each cover the projection of at least one first via tower in the bottom metal layer; the projections of the remaining M third metal lines in the bottom metal layer each cover the projection of at least one second via tower in the bottom metal layer; wherein the first direction and the second direction are perpendicular; the second metal layer comprises 2J fourth metal lines arranged in parallel along the first direction; wherein the projections of J fourth metal lines in the bottom metal layer cover the projection of at least one first via tower in the bottom metal layer; the projections of the remaining J fourth metal lines in the bottom metal layer cover the projection of at least one second via tower in the bottom metal layer.

[0006] In the embodiments of the present application, by arranging the K intermediate metal layers, and the projections of the third metal lines and the fourth metal lines in the bottom metal layer each cover the projection of at least one first / second via tower in the bottom metal layer, the power metal line is connected to the adjacent N power lines in the bottom metal layer through the first via tower, and the ground metal line is connected to the adjacent N ground lines in the bottom metal layer through the second via tower. Thus, the lines needed to be arranged for connection between the top metal layer and the bottom metal layer can be reduced, thereby reducing the resistance. Moreover, the power supply and the ground are distributed through the K intermediate metal layers, thereby reducing the current density.

[0007] With the technical solution provided in the first aspect above, in some possible implementation manners, the power supply metal line and the ground metal line of the top metal layer are arranged in parallel along a first direction, K is an odd number; the power supply metal line is connected to the target first metal layer through a via, and the ground metal line is connected to the target first metal layer through a via; the target first metal layer is connected to the power supply line and the ground line in the bottom metal layer through a first via tower and a second via tower respectively; and the target first metal layer is the first metal layer closest to the top metal layer.

[0008] With the technical solution provided in the first aspect above, in some possible implementation manners, the position of the projection area corresponding to the first via tower is an overlapping position of the projection of the metal line in the first metal layer on the bottom metal layer and the power supply line of the bottom metal layer.

[0009] In the embodiments of the present application, since the first via tower is arranged at the overlapping position of the projection of the metal line in the first metal layer on the bottom metal layer and the power supply line of the bottom metal layer, the first via tower can be connected to the metal lines in each first metal layer and each second metal layer, thereby connecting all the intermediate metal layers and the top metal layer and the bottom metal layer, and achieving the effect of connecting the power supply metal line of the top metal layer and the power supply line of the bottom metal layer through the first via tower.

[0010] With the technical solution provided in the first aspect above, in some possible implementation manners, the position of the projection area corresponding to the second via tower is an overlapping position of the projection of the metal line in the first metal layer on the bottom metal layer and the ground line of the bottom metal layer.

[0011] In the embodiments of the present application, since the second via tower is arranged at the overlapping position of the projection of the metal line in the first metal layer on the bottom metal layer and the ground line of the bottom metal layer, the second via tower can be connected to the metal lines in each first metal layer and each second metal layer, thereby connecting all the intermediate metal layers and the top metal layer and the bottom metal layer, and achieving the effect of connecting the ground metal line of the top metal layer and the ground line of the bottom metal layer through the second via tower.

[0012] With the technical solution provided in the first aspect above, in some possible implementation manners, the interval between two adjacent first via towers or two adjacent second via towers on each first metal line is 4 standard unit single heights.

[0013] In the embodiments of the present application, through actual tests, when the interval between two adjacent first via towers or two adjacent second via towers on the first metal line is 4 standard unit single heights, the via density can be as large as possible, and the design rules are not violated, thereby realizing the maximum power transmission efficiency as possible.

[0014] In some possible implementation manners of the first aspect, a width of the metal line in the intermediate metal layer is a minimum width limited by a manufacturing process of manufacturing the intermediate metal layer.

[0015] In the embodiments of the present application, the width of the metal line in the intermediate metal layer is set to the minimum width limited by the manufacturing process, so that the wire winding resources of the intermediate metal layer can be saved.

[0016] In some possible implementation manners of the first aspect, a projection of the power metal line on the bottom metal layer covers N power lines, and a projection of the ground metal line on the bottom metal layer covers N ground lines.

[0017] In some possible implementation manners of the first aspect, a field effect transistor included in a standard cell in a chip using the power network structure is a fin field effect transistor.

[0018] In the second aspect, the present application provides a chip, including the power network structure of the first aspect and / or any possible implementation manner of the first aspect.

[0019] In the third aspect, the present application provides an electronic device, including the chip of the second aspect, or including the power network structure of the second aspect. BRIEF DESCRIPTION OF DRAWINGS

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some of the embodiments of the present application, and therefore should not be considered as a limitation on the scope. For those skilled in the art, other related drawings can also be obtained without creative labor.

[0021] Figure 1 FIG. 1 shows a position structure schematic diagram of a first metal layer and a bottom metal layer according to an embodiment of the present application;

[0022] Figure 2 FIG. 2 shows a cross-sectional structure schematic diagram of a first power network structure according to an embodiment of the present application;

[0023] Figure 3 FIG. 3 shows a cross-sectional structure schematic diagram of a second power network structure according to an embodiment of the present application;

[0024] Figure 4 FIG. 4 shows a cross-sectional structure schematic diagram of a third power network structure according to an embodiment of the present application.

[0025] 110 - first metal line; 210 - power supply metal line; 220 - ground metal line; 310 - first via tower; 320 - second via tower; 330 - third metal line; 410 - fourth metal line. DETAILED DESCRIPTION

[0026] The terms "first", "second", "third", "fourth" and the like in the description specify only for the purpose of description and do not indicate the arrangement sequence, and cannot be understood as indicating or implying relative importance.

[0027] In addition, the terms "horizontal", "vertical" and the like do not mean that the components must be absolutely horizontal or vertical, but can be slightly inclined. For example, "horizontal" only means that it is more horizontal relative to "vertical", and does not mean that the structure must be completely horizontal, but can be slightly inclined.

[0028] In the description of the present application, it should be pointed out that the terms "inner", "outer", "left", "right", "upper", "lower" and the like indicate the orientation or positional relationship shown in the drawings, or the orientation or positional relationship commonly used when the product of the present application is used, only for the purpose of facilitating the description of the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0029] In the description of the present application, unless otherwise explicitly specified and limited, the terms "set", "connected" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements.

[0030] The technical solutions of the present application will be described in detail below with reference to the accompanying drawings.

[0031] Please refer to Figure 1 , Figure 1 The structure of a power supply network structure shown in an embodiment of the present application is shown in the structure diagram.

[0032] As Figure 1 shown, the power supply network structure includes a top metal layer (not shown in the figure) and a bottom metal layer.

[0033] The bottom metal layer includes 2N first metal lines 110 arranged in parallel along a first direction, each first metal line 110 is arranged on a winding track (also referred to as a wiring track), and adjacent two first metal lines 110 are spaced apart by n winding tracks. Wherein, the bottom metal layer is arranged close to the standard cell.

[0034] Optionally, when the power network structure is applied to a chip, the bottom metal layer can be the same metal layer as the signal pin layer of a standard cell in the chip. By setting the interval between two adjacent first metal lines in the bottom metal layer to be n track intervals, the density requirement of the bottom metal layer can be reduced, and the conflict with the pins and internal connections of a standard cell based on a fin field effect transistor can be avoided.

[0035] In the above structure, N of the 2N first metal lines 110 are power lines, and the other N first metal lines are ground lines. The N power lines are adjacent to each other, and the N ground lines are adjacent to each other. N and n are positive integers.

[0036] Optionally, the first metal lines in the bottom metal layer can not be uniformly distributed, i.e., the number of track intervals between two adjacent first metal lines can be different (i.e., the value of n can be different).

[0037] Optionally, n can be selected according to the specific power consumption of the chip. For example, a chip with low power consumption can increase the value of n to make the first metal lines 110 in the bottom metal layer more sparse, thereby improving the performance of the chip and saving the wiring resources of the bottom metal layer.

[0038] Since the bottom metal layer, the top metal layer, etc. need to be etched to form metal lines and other structures in these metal layers during the manufacturing process, the top metal layer and the bottom metal layer are represented by the first metal lines 110 and the power metal lines 210 and the ground metal lines 220 in the drawings. Figure 1

[0039] It can be understood that there must be an insulating layer between different metal layers to separate different metal layers.

[0040] A track in chip design refers to a routing track, which is used to constrain the routing direction of a router, ensure that a signal line travels along a predetermined path, and avoid chaos and low efficiency caused by random wiring. By defining a track in advance, a designer can complete wiring more quickly, reduce design time, and ensure that the connections in the design are orderly and efficient. In addition, reasonable track design can reduce the waste of routing resources and improve the overall performance and reliability of the chip.

[0041] The definition of a track can include the following attributes: routing direction (such as vertical or horizontal direction), pitch (distance between each track), offset (distance of the first track from the starting point), maximum width (maximum width of the wire on this layer), and default width.

[0042] ​The specific arrangement and implementation principle of the wire winding track are known to those skilled in the art, and will not be described here for brevity.

[0043] Optionally, the metal material of the bottom metal layer can be set according to actual needs, for example, it can be copper, aluminum, tungsten, titanium, etc., and the metal material of the bottom metal layer is not limited to the metal types exemplified here.

[0044] Optionally, the specific direction of the first direction can be set according to actual needs, and the specific direction of the first direction is not limited here.

[0045] The standard cell specifically refers to a basic functional unit composed of MOS tubes and the like in a chip, such as an AND gate, an OR gate, a NOT gate, etc. In the chip, a layer of insulating layer is usually arranged on the top of the standard cell, and then a power network structure is arranged on the insulating layer. A via hole is opened on the insulating layer between the power network structure and the standard cell to realize power supply for the standard cell.

[0046] Optionally, the metal wires of the pin metal layer of the standard cell closest to the bottom metal layer are arranged in parallel along the second direction, wherein the first direction and the second direction are perpendicular.

[0047] The standard cell usually can include a substrate, a doped layer, and a plurality of metal layers, and the topmost metal layer of the standard cell is the pin metal layer here. The pin metal layer is usually a metal layer inside the chip for signal transmission and local power distribution.

[0048] The top metal layer includes a power metal wire 210 and a ground metal wire 220, wherein the power metal wire 210 is connected to the adjacent N power lines in the bottom metal layer through a first via tower 310, and the ground metal wire 220 is connected to the adjacent N ground lines in the bottom metal layer through a second via tower 320.

[0049] Each first via tower 310 and each second via tower 320 includes vias of different layers whose projections in the bottom metal layer are located in the same region.

[0050] Optionally, the power metal wire 210 and the ground metal wire 220 can each include one, that is, the top metal layer can include one power metal wire 210 and one ground metal wire 220.

[0051] Alternatively, the power metal wire 210 and the ground metal wire 220 can each include multiple, that is, the top metal layer can include multiple power metal wires 210 and multiple ground metal wires 220. However, the projections of the multiple power metal wires 210 in the bottom metal layer need to cover the N power lines of the bottom metal layer, and the projections of the multiple ground metal wires 220 in the bottom metal layer need to cover the N ground lines of the bottom metal layer.

[0052] Optionally, the metal material of the top metal layer can be set according to actual needs, for example, can be copper, aluminum, tungsten, titanium, etc., and the metal material of the top metal layer is not limited to the metal types exemplified here.

[0053] Optionally, the first via tower 310 and the second via tower 320 can each include multiple. By setting multiple first via towers 310 and multiple second via towers 320, the current density and resistance can be reduced.

[0054] Optionally, the interval between two adjacent first via towers 310 or two adjacent second via towers 320 on each first metal line 110 is 4 standard unit single heights.

[0055] Specifically, if the first via tower 310 is set on the first metal line 110, the interval between two adjacent first via towers 310 on the first metal line 110 is 4 standard unit single heights. If the second via tower 320 is set on the first metal line 110, the interval between two adjacent second via towers 320 on the first metal line 110 is 4 standard unit single heights.

[0056] Among them, the standard unit single height is that the height of the unit in the standard unit library is an integer multiple of the basic height, usually a single height.

[0057] In order to facilitate the understanding of the via tower, the following will be combined with Figure 3 for description.

[0058] As Figure 3 shown, the bottom metal layer and the first metal layer are connected by vias, the first metal layer and the second metal layer are connected by vias, and the second metal layer and the top metal layer are connected by vias. Among these vias, the projections of the bottom metal layer can be located in the same projection area. That is, all the vias whose projections are located in the same projection area collectively constitute a via tower.

[0059] Among them, there can be multiple vias in the same layer whose projections of the bottom metal layer are located in the same projection area.

[0060] In one embodiment, the power network architecture can further include K intermediate metal layers.

[0061] The K intermediate metal layers include first metal layers and second metal layers arranged in sequence and overlapping. Taking the intermediate metal layer closest to the bottom metal layer as the starting point, the odd layers in the K intermediate metal layers are first metal layers, and the even layers are second metal layers.

[0062] For example, if K is 2, the power network structure includes the bottom metal layer, the first metal layer (i.e., the first intermediate metal layer), the second metal layer (i.e., the second intermediate metal layer), and the top metal layer. Alternatively, if K is 3, the power network structure includes the bottom metal layer, the first metal layer (i.e., the first intermediate metal layer), the second metal layer (i.e., the second intermediate metal layer), the third metal layer (i.e., the third intermediate metal layer), and the top metal layer. If K is 4, the power network structure includes the bottom metal layer, the first metal layer (i.e., the first intermediate metal layer), the second metal layer (i.e., the second intermediate metal layer), the third metal layer (i.e., the third intermediate metal layer), the fourth metal layer (i.e., the fourth intermediate metal layer), and the top metal layer. Similarly, the specific value of K can be set according to actual needs, and the specific value is not limited herein. K is a positive integer.

[0063] Optionally, when K = 1, the first metal layer is the closest to the bottom metal layer among the K metal layers. In this case, the power network structure includes the bottom metal layer, the first metal layer, and the top metal layer.

[0064] The first metal layer includes 2M third metal lines 330 arranged in parallel along the second direction. The projections of the M third metal lines 330 on the bottom metal layer each cover the projection of at least one first via tower 310 on the bottom metal layer. The projections of the other M third metal lines 330 on the bottom metal layer each cover the projection of at least one second via tower 320 on the bottom metal layer. The first direction and the second direction are perpendicular.

[0065] Optionally, the number of first via towers 310 covered by the M third metal lines 330 in the first metal layer whose projections on the bottom metal layer each cover the first via towers 310 can be different. The projections of different third metal lines 330 each cover different first via towers 310.

[0066] The number of second via towers 320 covered by the M third metal lines 330 in the first metal layer whose projections on the bottom metal layer each cover the second via towers 320 can be different. The projections of different third metal lines 330 each cover different second via towers 320.

[0067] For example, if M = 3, the projection of the third metal line 1 on the bottom metal layer can be the projection of the first via tower 1 on the bottom metal layer; the projection of the third metal line 2 on the bottom metal layer can be the projection of the first via tower 2 on the bottom metal layer; and the projection of the third metal line 3 on the bottom metal layer can be the projections of the first via tower 3 and the first via tower 4 on the bottom metal layer.

[0068] The projection of the third metal line 4 in the bottom metal layer can cover the projection of the second via tower 1 in the bottom metal layer; the projection of the third metal line 5 in the bottom metal layer can cover the projection of the second via tower 2 and the second via tower 3 in the bottom metal layer; and the projection of the third metal line 6 in the bottom metal layer can cover the projection of the second via tower 4 in the bottom metal layer.

[0069] The examples are only for the convenience of understanding and should not be regarded as a limitation of the present application.

[0070] Optionally, the shapes of different third metal lines in the first metal layer can be different.

[0071] Optionally, the projections of M third metal lines 330 in the first metal layer in the bottom metal layer intersect with N power lines and do not intersect with N ground lines; and the projections of the other M third metal lines 330 in the first metal layer in the bottom metal layer intersect with N ground lines and do not intersect with N power lines.

[0072] The first direction and the second direction are perpendicular; and the projections of the metal lines in different first metal layers in the bottom metal layer coincide.

[0073] In order to facilitate the understanding of the positional relationship between the first metal layer and the bottom metal layer, M=2 and N=5 are taken as examples for illustration, please refer to Figure 3 .

[0074] As shown in Figure 3 , the first metal lines 110 (5 power lines and 5 ground lines) in the bottom metal layer all extend along the vertical direction, and the third metal lines 330 in the first metal layer extend along the horizontal direction. That is, the third metal lines 330 in the first metal layer and the first metal lines 110 in the bottom metal layer are perpendicular. The projections of two third metal lines 330 in the first metal layer in the bottom metal layer intersect with each of the power lines in the bottom metal layer. The projections of the other two third metal lines 330 in the first metal layer in the bottom metal layer intersect with each of the ground lines in the bottom metal layer.

[0075] The second metal layer includes 2J fourth metal lines 410 arranged in parallel along the first direction; the projections of the J fourth metal lines 410 in the bottom metal layer cover the projections of at least one first via tower 310 in the bottom metal layer; and the projections of the J fourth metal lines 410 in the bottom metal layer cover the projections of at least one second via tower 320 in the bottom metal layer.

[0076] Optionally, the number of the first via towers 310 covered by the J fourth metal lines 410 in the second metal layer in the bottom metal layer can be different. The projections of different fourth metal lines 410 each cover different first via towers.

[0077] The number of second through-hole towers 320 covered by each of the J fourth metal lines 410 whose projections in the second metal layer onto the bottom metal layer can be different. Furthermore, the projections of different fourth metal lines 410 cover different second through-hole towers.

[0078] For example, if A = 3, then the projection of the fourth metal wire 1 in the bottom metal layer can be the projection of the first through-hole tower 1 in the bottom metal layer; the projection of the fourth metal wire 2 in the bottom metal layer can be the projection of the first through-hole tower 2 in the bottom metal layer; the projection of the fourth metal wire 3 in the bottom metal layer can be the projection of the first through-hole tower 3 and the first through-hole tower 4 in the bottom metal layer.

[0079] The projection of the fourth metal line 4 in the bottom metal layer can be the projection of the second through-hole tower 1 in the bottom metal layer; the projection of the fourth metal line 5 in the bottom metal layer can be the projection of the second through-hole tower 2 and the second through-hole tower 3 in the bottom metal layer; the projection of the fourth metal line 6 in the bottom metal layer can be the projection of the second through-hole tower 4 in the bottom metal layer.

[0080] The examples provided are for illustrative purposes only and should not be construed as limiting the scope of this application.

[0081] Optionally, the shapes of the different fourth metal lines in the second metal layer can be different.

[0082] Optionally, the projections of the N fourth metal lines 410 in the second metal layer onto the bottom metal layer coincide with the N power lines of the bottom metal layer, and the projections of the N fourth metal lines 410 onto the bottom metal layer coincide with the N ground lines of the bottom metal layer.

[0083] In one embodiment, the position of the projection area corresponding to the first through-hole tower 310 is: the overlapping position of the projection of the metal line in the first metal layer onto the bottom metal layer and the power line of the bottom metal layer.

[0084] Optionally, a first through-hole tower 310 may be provided at each overlapping location. Alternatively, the first through-hole tower 310 may be provided at only some of the overlapping locations.

[0085] The specific number of the first through-hole tower 310 can be set according to actual needs, and there is no limit to its specific number here.

[0086] For ease of understanding, Figure 1 The positional relationship between the first metal layer and the bottom metal layer shown is illustrated using this example.

[0087] like Figure 1 As shown, the overlapping position of the projection of the metal line in the first metal layer onto the bottom metal layer and the power line of the bottom metal layer ( Figure 1There are a total of 10 black squares (as shown). Therefore, a first through-hole tower 310 can be set at each of these 10 locations, and each first through-hole tower 310 passes through all the intermediate metal layers to connect with the power metal line 210 of the top metal layer.

[0088] In one embodiment, the position of the second through-hole tower 320 is: the position where the projection of the metal wire in the first metal layer onto the bottom metal layer overlaps with the ground wire of the bottom metal layer.

[0089] Optionally, a second through-hole tower 320 may be provided at each overlapping location. Alternatively, the second through-hole tower 320 may be provided at only some of the overlapping locations.

[0090] The specific number of the second through-hole tower 320 can be set according to actual needs, and there is no limit to its specific number here.

[0091] For ease of understanding, Figure 1 The positional relationship between the first metal layer and the bottom metal layer shown is illustrated using this example.

[0092] like Figure 1 As shown, the overlapping position of the projection of the metal line in the first metal layer onto the bottom metal layer and the ground line of the bottom metal layer ( Figure 1 There are a total of 10 black squares (as shown). Therefore, a second through-hole tower 320 can be set at each of these 10 locations, and each second through-hole tower 320 passes through all the intermediate metal layers to connect with the grounding metal wire 220 of the top metal layer.

[0093] In a first embodiment of the K-layer intermediate metal layer, the top metal layer includes a power metal line 210 and a ground metal line 220 arranged parallel to each other along a first direction. The power metal line 210 is connected to the target first metal layer through a through-hole, and the ground metal line 220 is also connected to the target first metal layer through a through-hole. The target first metal layer is connected to the power line and ground line in the bottom metal layer through a first through-hole tower 310 and a second through-hole tower 320, respectively.

[0094] In this embodiment, the projection of the power metal line 210 included in the top metal layer onto the bottom metal layer may overlap with the power line of the bottom metal layer, or the projection of the power metal line 210 included in the top metal layer onto the bottom metal layer may not overlap with the power line of the bottom metal layer.

[0095] Similarly, the projection of the grounding metal line 220 included in the top metal layer onto the bottom metal layer may overlap with the ground wire of the bottom metal layer, or the projection of the grounding metal line 220 included in the top metal layer onto the bottom metal layer may not overlap with the ground wire of the bottom metal layer.

[0096] In the case that the projection of the ground metal line 220 included in the top metal layer on the bottom metal layer and the ground wire of the bottom metal layer exist an overlapping area, and the projection of the ground metal line 220 included in the top metal layer on the bottom metal layer and the ground wire of the bottom metal layer exist an overlapping area, the projection of the power metal line 210 on the bottom metal layer can cover N power wires, and the power metal line 210 is connected with the N power wires through the first via tower 310; the projection of the ground metal line 220 on the bottom metal layer covers N ground wires, and the ground metal line 220 is connected with the N ground wires through the second via tower 320. For the convenience of understanding, please refer to Figure 1 .

[0097] Wherein, the top metal layer and the bottom metal layer are connected through the first via tower 310 and the second via tower 320.

[0098] For the convenience of understanding the relationship between the top metal layer and the bottom metal layer, please refer to Figure 2 .

[0099] As shown in Figure 2 , the top metal layer includes a power metal line 210 and a ground metal line 220. An insulating layer is arranged between the top metal layer and the bottom metal layer, and the bottom metal layer includes 3 power wires and 3 ground wires. The power metal line 210 is connected with each power wire of the bottom metal layer through the first via tower 310, and the ground metal line 220 is connected with each ground wire of the bottom metal layer through the second via tower 320.

[0100] For the convenience of understanding the specific manner that each first via tower 310 passes through all the intermediate metal layers to be connected with the power metal line 210 of the top metal layer, and each second via tower 320 passes through all the intermediate metal layers to be connected with the ground metal line 220 of the top metal layer, please refer to Figure 3 . Figure 3 As shown in , the projection of the power metal line 210 on the bottom metal layer covers N power wires, and the projection of the ground metal line 220 on the bottom metal layer covers N ground wires.

[0101] Figure 3 As shown in , the power network structure includes a bottom metal layer, a first metal layer, a second metal layer, and a top metal layer.

[0102] Since the projection of each intermediate metal layer and the top metal layer on the bottom metal layer includes the overlapping position of the metal line in the first metal layer on the ground line of the bottom metal layer and the overlapping position of the metal line in the first metal layer on the power line of the bottom metal layer, the through holes are arranged at the two overlapping positions respectively, so as to connect the metal layers of the adjacent two layers. Since the through holes of each adjacent two metal layers are arranged at the same position, all the through holes at the same overlapping position are connected.

[0103] In the case that the projection of the ground metal line 220 included in the top metal layer on the bottom metal layer has no overlapping area with the ground line of the bottom metal layer, and the projection of the ground metal line 220 included in the top metal layer on the bottom metal layer has no overlapping area with the ground line of the bottom metal layer, the ground metal line 220 and the ground line need to be connected through the intermediate metal layer, and the power metal line 210 and the power line need to be connected through the intermediate metal layer.

[0104] In this embodiment, K is an odd number, that is, the uppermost metal layer in the K intermediate metal layers is the target first metal layer. Since the metal lines in the first metal layer are arranged in parallel along the second direction, and the metal lines in the top metal layer and the bottom metal layer are arranged in parallel along the first direction, the power metal line 210 in the top metal layer is connected to the target first metal layer through the through hole, and the metal line in the target first metal layer is connected to the power line of the bottom metal layer through the first through hole tower 310.

[0105] Correspondingly, the ground metal line 220 in the top metal layer is connected to the target first metal layer through the through hole, and the metal line in the target first metal layer is connected to the ground line of the bottom metal layer through the first through hole tower 310. The metal line in the target first metal layer connected to the power metal line 210 and the metal line connected to the ground metal line 220 are different metal lines to prevent the power metal line 210 and the ground metal line 220 from being short-circuited.

[0106] Optionally, in this mode, each third metal line 330 in the target first metal layer can be connected to a plurality of first through hole towers 310 or second through hole towers 320. That is, each third metal line 330 in the target first metal layer can be provided with a plurality of through hole towers on the projection area in the bottom metal layer.

[0107] For ease of understanding, please refer to Figure 4 . As Figure 4As shown, the projection of the ground metal line 220 on the bottom metal layer does not overlap with the ground lines of the bottom metal layer, and the projection of the ground metal line 220 on the bottom metal layer does not overlap with the ground lines of the bottom metal layer. Some metal lines in the target first metal layer are connected to the ground metal line 220 through the via, and other metal lines in the target first metal layer are connected to the power metal line 210 through the via. The metal lines in the target first metal layer connected to the ground metal line 220 are connected to two ground lines in the bottom metal layer through two second via towers 320. The metal lines in the target first metal layer connected to the power metal line 210 are connected to two power lines in the bottom metal layer through two first via towers 310.

[0108] Figure 4 The above-mentioned manner is only for the convenience of understanding and should not be taken as a limitation to the present application.

[0109] In an embodiment, the width of the metal line in the intermediate metal layer is the minimum width limited by the manufacturing process of the intermediate metal layer.

[0110] By setting the width of the metal line in the intermediate metal layer to be the minimum width limited by the manufacturing process of the intermediate metal layer, the winding resource of the intermediate metal layer can be saved. However, the width of the metal line in the intermediate metal layer needs to cover the via and meet the design rule check.

[0111] In an embodiment, the difference between the total areas of the vias (including the first via tower 310 and the second via tower 320) in each intermediate metal layer is less than a preset area threshold, so as to reduce the introduction of additional resistance.

[0112] The preset area threshold can be set according to actual needs, and the specific value is not limited here.

[0113] In an embodiment, the field effect transistor included in the standard cell is a fin field effect transistor.

[0114] The specific implementation and structure of the fin field effect transistor are well known to those skilled in the art, and will not be described here for brevity.

[0115] Optionally, since the field effect transistor included in the standard cell is a fin field effect transistor, the bottom metal layer should maintain mask homology (i.e., same-color splitting) when performing mask splitting.

[0116] In an embodiment, the power network structure can be applied to a chip with a 7nm or less than 7nm process.

[0117] Based on the same technical concept, the present application also provides a chip including the aforementioned power network structure.

[0118] The chip can be any type of chip that needs to include a power network structure, such as various power management chips, processor chips, and the like, and the specific type thereof is not limited herein.

[0119] Based on the same technical concept, the application further provides a power network structure, which includes a top metal layer and a bottom metal layer.

[0120] The bottom metal layer includes a plurality of bottom metal layer patterns, and each bottom metal layer pattern includes 2N first metal lines arranged in parallel along a first direction, each first metal line being arranged on a winding track, and adjacent two first metal lines being spaced apart by 5 winding tracks; wherein N first metal lines of the 2N first metal lines are power lines, and the other N first metal lines are ground lines, and the N power lines are adjacent, and the N ground lines are adjacent; N is a positive integer.

[0121] The top metal layer includes power metal lines and ground metal lines, wherein the power metal lines are connected to the adjacent N power lines in the bottom metal layer through first via towers, and the ground metal lines are connected to the adjacent N ground lines in the bottom metal layer through second via towers 320.

[0122] Each first via tower 310 and each second via tower 320 includes vias of different layers whose projections on the bottom metal layer are located in the same region.

[0123] The remaining implementation manners of the power network structure are the same as those of the aforementioned power network structure, and for brief description, the contents not described herein can be referred to the aforementioned power network structure. No further description is given herein.

[0124] Based on the same technical concept, the application further provides an electronic device, which includes the aforementioned chip, i.e., a chip including the aforementioned power network structure.

[0125] The electronic device can be, for example, a computer, a mobile phone, a car, an engineering device with a control chip, and the like, and the specific type of the electronic device is not limited to the types exemplified herein.

[0126] The above only describes the preferred embodiments of the application and is not intended to limit the application. For those skilled in the art, the application can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the application shall be included in the protection scope of the application.

Claims

1. A power network structure, characterized in that, include: Top metal layer, bottom metal layer, K layer, intermediate metal layer; The bottom metal layer includes multiple bottom metal layer patterns, each bottom metal layer pattern including 2N first metal wires arranged parallel to a first direction, each first metal wire being disposed on a winding track, with n winding tracks spaced between adjacent first metal wires; wherein, N of the 2N first metal wires are power lines, and the other N first metal wires are ground lines, and the N power lines are adjacent, and the N ground lines are adjacent; N and n are both positive integers; The top metal layer includes a power metal line and a ground metal line, wherein the power metal line is connected to N adjacent power lines in the bottom metal layer through a first through-hole tower, and the ground metal line is connected to N adjacent ground lines in the bottom metal layer through a second through-hole tower; each first through-hole tower and each second through-hole tower includes: through-holes in different layers whose projections in the bottom metal layer are located in the same area; The K-layer intermediate metal layer includes a first metal layer and a second metal layer that are sequentially overlapped; taking the intermediate metal layer closest to the bottom metal layer as the starting point, the odd-numbered layers in the K-layer intermediate metal layer are the first metal layer, and the even-numbered layers are the second metal layer; The first metal layer includes 2M third metal wires arranged parallel to the second direction; wherein the projections of the M third metal wires on the bottom metal layer each cover the projection of at least one first through-hole tower on the bottom metal layer; the projections of the remaining M third metal wires on the bottom metal layer each cover the projection of at least one second through-hole tower on the bottom metal layer; wherein the first direction and the second direction are perpendicular. The second metal layer includes 2J fourth metal wires arranged parallel to the first direction; wherein, the projection of J of the fourth metal wires on the bottom metal layer covers the projection of at least one first through-hole tower on the bottom metal layer; and the projection of the remaining J of the fourth metal wires on the bottom metal layer covers the projection of at least one second through-hole tower on the bottom metal layer.

2. The power network structure according to claim 1, characterized in that, The power supply metal line and the grounding metal line of the top metal layer are arranged parallel to each other along the first direction, and K is an odd number; The power metal line is connected to the target first metal layer through a through-hole, and the ground metal line is connected to the target first metal layer through a through-hole; the target first metal layer is connected to the power line and ground line in the bottom metal layer through a first through-hole tower and a second through-hole tower, respectively; wherein, the target first metal layer is the first metal layer closest to the top metal layer.

3. The power network structure according to claim 1, characterized in that, The location of the projection area corresponding to the first through-hole tower is: the position where the projection of the metal wire in the first metal layer on the bottom metal layer overlaps with the power line of the bottom metal layer.

4. The power network structure according to claim 1, characterized in that, The location of the projection area corresponding to the second through-hole tower is: the position where the projection of the metal line in the first metal layer onto the bottom metal layer overlaps with the ground line of the bottom metal layer.

5. The power network structure according to claim 1, characterized in that, The interval between two adjacent first through-hole towers or two adjacent second through-hole towers on each of the first metal lines is 4 standard unit heights.

6. The power network structure according to claim 1, characterized in that, The width of the metal lines in the intermediate metal layer is the minimum width limited by the manufacturing process of the intermediate metal layer.

7. The power network structure according to claim 1, characterized in that, The projection of the power metal wire onto the bottom metal layer covers N power wires; The projection of the grounding metal wire onto the bottom metal layer covers N grounding wires.

8. The power network structure according to any one of claims 1-7, characterized in that, The standard cells in the chip using the aforementioned power network structure include finned field-effect transistors.

9. A chip, characterized in that, include: The power network structure as described in any one of claims 1-8.

10. An electronic device, characterized in that, include: The chip as described in claim 9.

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