Semiconductor structure capable of enhancing heat dissipation

Abstract

The utility model relates to the technical field of semiconductors, and particularly discloses a semiconductor structure capable of enhancing heat dissipation, which comprises a substrate, a plurality of grooves distributed in an array are arranged on the surface of the substrate, the cross section of each groove is trapezoidal, a first heat conduction layer covers the upper surface of the substrate and the inner wall of each groove, and a second heat conduction layer covers the inner wall of each groove. The first heat conduction layer is made of graphene, the heat dissipation structure comprises heat dissipation fins embedded in the grooves and micro-channels distributed in gaps between the adjacent heat dissipation fins, a semiconductor chip is arranged on the upper end face of the second heat conduction layer, the trapezoidal grooves are accurately embedded with the roots of the fins, the interface heat conduction efficiency and the mechanical stability are greatly improved, and the heat dissipation performance of the semiconductor chip is improved. The heat dissipation failure caused by poor contact of a traditional structure is avoided, the graphene heat conduction layer and the aluminum nitride ceramic layer act synergistically, rapid transverse diffusion of chip heat is achieved, electrical insulation safety is ensured, the heat dissipation surface area is remarkably expanded through the forked design of the tops of the fins, and the heat dissipation effect is good.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and specifically discloses a semiconductor structure that enhances heat dissipation. Background Technology

[0002] Semiconductors are materials whose conductivity lies between that of conductors and nonconductors. Based on the characteristics of semiconductor materials, semiconductor devices are solid-state devices, and their size can be reduced to a very small size. Therefore, they consume less power and have a high degree of integration, and have been widely used in the field of electronic technology.

[0003] As the power density of semiconductor devices continues to increase, the heat generated during their operation also increases. Traditional heat dissipation methods (such as heat sinks, air cooling, or simple thermal conductive structures) are insufficient to meet the heat dissipation requirements of high-power devices, leading to excessively high device temperatures, affecting performance stability, and even causing damage. Existing technologies often suffer from problems such as a single heat dissipation path, insufficient heat dissipation area, and uneven heat distribution. Therefore, there is an urgent need for a semiconductor structure that can improve heat dissipation efficiency and optimize heat distribution. Utility Model Content

[0004] This invention proposes a semiconductor structure that enhances heat dissipation. Through the synergistic effect of the graphene thermal conductive layer and the aluminum nitride ceramic layer, it achieves rapid lateral heat diffusion of the chip while ensuring electrical insulation safety. The bifurcated design at the top of the fins significantly expands the heat dissipation surface area, resulting in good heat dissipation performance.

[0005] This invention is achieved by providing a semiconductor structure that enhances heat dissipation, comprising:

[0006] A substrate, wherein a plurality of arrayed grooves are formed on the surface of the substrate, and the cross-sectional shape of the grooves is trapezoidal;

[0007] A first thermally conductive layer is applied to the upper surface of the substrate and the inner wall of the groove. The material of the first thermally conductive layer is graphene.

[0008] A heat dissipation structure, comprising heat dissipation fins fitted into a groove and microchannels distributed in the gaps between adjacent heat dissipation fins, wherein the microchannels are filled with a phase change material;

[0009] The second thermal conductive layer is disposed above the heat dissipation structure. The material of the second thermal conductive layer is aluminum nitride ceramic, and a semiconductor chip is disposed on the upper surface of the second thermal conductive layer.

[0010] As a preferred embodiment of the semiconductor structure for enhancing heat dissipation according to this invention, the stirring mechanism further includes:

[0011] A drive motor is mounted on the upper end face of the bracket, and the output end of the drive motor extends into the interior of the bracket and is fixedly connected to a first bevel gear.

[0012] The second bevel gear is fixedly connected to the upper end of the outer wall of the first shaft;

[0013] The third bevel gear is fixedly connected to the outer wall of the second shaft, and the first and second bevel gears are both meshed with the third bevel gear.

[0014] As a preferred embodiment of the semiconductor structure for enhancing heat dissipation according to this invention, the root shape of the heat dissipation fins matches the groove, and the top of the heat dissipation fins has a forked structure.

[0015] As a preferred semiconductor structure for enhancing heat dissipation according to this invention, the microchannel has a rectangular cross-section and its inner wall is coated with a hydrophilic nano-coating.

[0016] As a preferred semiconductor structure for enhancing heat dissipation according to this utility model, the phase change material is paraffin or a metal alloy.

[0017] As a preferred embodiment of the semiconductor structure for enhancing heat dissipation according to this invention, the substrate is made of copper and has a thickness of 1-5 mm.

[0018] As a preferred embodiment of the semiconductor structure for enhancing heat dissipation according to this invention, the spacing between adjacent grooves is 0.5-3mm.

[0019] As a preferred embodiment of the semiconductor structure for enhancing heat dissipation according to this invention, the substrate, the first thermally conductive layer, the heat dissipation structure, and the second thermally conductive layer are all encapsulated within an encapsulation layer.

[0020] The beneficial effects of this utility model are:

[0021] This structure precisely fits the trapezoidal groove into the root of the fin, significantly improving the interface heat conduction efficiency and mechanical stability, avoiding heat dissipation failure caused by poor contact in traditional structures. The graphene thermal conductive layer and the aluminum nitride ceramic layer work together to achieve rapid lateral heat diffusion from the chip while ensuring electrical insulation safety. The bifurcated design at the top of the fin significantly expands the heat dissipation surface area, resulting in good heat dissipation performance. Attached Figure Description

[0022] To more clearly illustrate the specific embodiments of this utility model or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. In all the drawings, similar elements or parts are generally identified by similar reference numerals. In the drawings, the elements or parts are not necessarily drawn to scale.

[0023] Figure 1 This is a cross-sectional view of the overall structure of this utility model;

[0024] Figure 2 This is an enlarged structural diagram of part a of this utility model;

[0025] Figure 3 This is a top view of the substrate structure of this utility model.

[0026] In the diagram, the markings are: 1. Substrate; 2. Groove; 3. First thermally conductive layer; 4. Heat sink fins; 5. Microchannel; 6. Second thermally conductive layer; 7. Semiconductor chip; 8. Encapsulation layer; 9. Phase change material. Detailed Implementation

[0027] The present invention will be further described below with reference to the accompanying drawings and specific embodiments to aid in understanding its content. Unless otherwise specified, the methods used in this invention are conventional methods; the raw materials and apparatus used, unless otherwise specified, are conventional commercially available products.

[0028] Please see Figure 1-3 A semiconductor structure for enhanced heat dissipation, comprising:

[0029] The substrate 1 has multiple arrayed grooves 2 on its surface, and the cross-sectional shape of the grooves 2 is trapezoidal.

[0030] The first thermal conductive layer 3 covers the upper surface of the substrate 1 and the inner wall of the groove 2. The material of the first thermal conductive layer 3 is graphene.

[0031] The heat dissipation structure includes heat dissipation fins 4 embedded in the groove 2 and microchannels 5 distributed in the gaps between adjacent heat dissipation fins 4, with phase change material 9 filled in the microchannels 5.

[0032] The second thermal conductive layer 6 is disposed above the heat dissipation structure. The material of the second thermal conductive layer 6 is aluminum nitride ceramic, and a semiconductor chip 7 is disposed on the upper surface of the second thermal conductive layer 6.

[0033] In this embodiment: the heat generated when the semiconductor chip 7 is working is first transferred to the second thermally conductive layer 6. The material of the second thermally conductive layer 6 is aluminum nitride ceramic. Aluminum nitride ceramic has both high thermal conductivity and electrical insulation, which can quickly dissipate heat and avoid the risk of short circuit. The heat is transferred downward from the second thermally conductive layer 6 to the heat dissipation fins 4. The roots of the heat dissipation fins 4 are embedded in the trapezoidal grooves 2 of the substrate 1, and the forked structure at the top increases the surface area. At the same time, the phase change material 9 in the microchannel 5 absorbs heat and undergoes a phase change. The trapezoidal grooves 2 and the roots of the heat dissipation fins 4 are geometrically matched to prevent them from falling off. The heat is conducted through the heat dissipation fins 4 to the first thermally conductive layer 3, and then diffused to the entire substrate 1. The extremely high thermal conductivity of graphene achieves rapid and uniform heat dissipation in the lateral direction, avoiding local high temperature. The copper substrate 1 balances structural strength and heat dissipation requirements, and the cost is controllable.

[0034] As a technical optimization of this utility model, the root shape of the heat dissipation fin 4 matches the groove 2, and the top of the heat dissipation fin 4 has a forked structure.

[0035] In this embodiment: the root shape of the heat dissipation fin 4 matches the groove 2, the top of the heat dissipation fin 4 has a forked structure, the root of the heat dissipation fin 4 is fitted into the trapezoidal groove 2 of the substrate 1, and the forked structure at the top increases the surface area.

[0036] As a technical optimization of this utility model, the microchannel 5 has a rectangular cross-section and its inner wall is coated with a hydrophilic nano-coating.

[0037] In this embodiment: the cross-section of the microchannel 5 is rectangular and the inner wall is coated with a hydrophilic nano-coating to ensure uniform coverage of the liquid material and avoid local drying.

[0038] As a technical optimization of this utility model, the phase change material 9 is paraffin or a metal alloy.

[0039] In this embodiment: the phase change material 9 is paraffin or a metal alloy, which improves the wettability of the phase change material 9 in the microchannel 5 and enhances the heat exchange efficiency.

[0040] As a technical optimization of this utility model, the substrate 1 is made of copper and has a thickness of 1-5mm.

[0041] In this embodiment, the substrate 1 is made of copper with a thickness of 1-5mm. The copper substrate 1 balances structural strength and thermal conductivity requirements, and the cost is controllable.

[0042] As a technical optimization of this utility model, the distance between adjacent grooves 2 is 0.5-3mm.

[0043] In this embodiment, the spacing between adjacent grooves 2 is 0.5-3mm, and the trapezoidal grooves 2 are geometrically matched with the root of the heat dissipation fins 4 to prevent them from falling off.

[0044] As a technical optimization of this utility model, the substrate 1, the first thermally conductive layer 3, the heat dissipation structure, and the second thermally conductive layer 6 are all encapsulated within the encapsulation layer 8.

[0045] In this embodiment, the substrate 1, the first thermally conductive layer 3, the heat dissipation structure, and the second thermally conductive layer 6 are all encapsulated within the encapsulation layer 8 to protect the internal structure and extend the device lifespan.

[0046] The working principle and usage process of this utility model: When the semiconductor chip 7 is working, the heat generated is first transferred to the second thermal conductive layer 6. The material of the second thermal conductive layer 6 is aluminum nitride ceramic. Aluminum nitride ceramic has both high thermal conductivity and electrical insulation, which can quickly dissipate heat and avoid the risk of short circuit. The heat is transferred downward from the second thermal conductive layer 6 to the heat dissipation fins 4. The roots of the heat dissipation fins 4 are embedded in the trapezoidal grooves 2 of the substrate 1, and the forked structure at the top increases the surface area. At the same time, the phase change material 9 in the microchannel 5 absorbs heat and undergoes a phase change. The trapezoidal grooves 2 and the roots of the heat dissipation fins 4 are geometrically matched to prevent them from falling off. The heat is conducted through the heat dissipation fins 4 to the first thermal conductive layer 3, and then diffused to the entire substrate 1. The extremely high thermal conductivity of graphene achieves rapid and uniform heat dissipation in the lateral direction, avoiding local high temperature. The copper substrate 1 balances the structural strength and heat dissipation requirements, and the cost is controllable.

[0047] In the description of this utility model, it should be understood that the terms "left", "right", "up", "down", "top", "bottom", "front", "back", "inner", "outer", "back", "middle", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0048] However, the above description is only a specific embodiment of this utility model and should not be construed as limiting the scope of implementation of this utility model. Therefore, any substitution of equivalent components or equivalent changes and modifications made in accordance with the scope of protection of this utility model should still fall within the scope of the claims of this utility model.

Claims

1. A semiconductor structure for enhanced heat dissipation, characterized in that: include: A substrate (1) has a plurality of arrayed grooves (2) on its surface, and the cross-sectional shape of the grooves (2) is trapezoidal. The first thermal conductive layer (3) covers the upper surface of the substrate (1) and the inner wall of the groove (2), and the material of the first thermal conductive layer (3) is graphene. The heat dissipation structure includes heat dissipation fins (4) fitted into the groove (2) and microchannels (5) distributed in the gaps between adjacent heat dissipation fins (4), wherein the microchannels (5) are filled with phase change material (9); The second thermal conductive layer (6) is disposed above the heat dissipation structure. The material of the second thermal conductive layer (6) is aluminum nitride ceramic. A semiconductor chip (7) is disposed on the upper surface of the second thermal conductive layer (6).

2. The semiconductor structure for enhanced heat dissipation according to claim 1, characterized in that: The root shape of the heat dissipation fin (4) matches the groove (2), and the top of the heat dissipation fin (4) has a forked structure.

3. The semiconductor structure for enhanced heat dissipation according to claim 1, characterized in that: The microchannel (5) has a rectangular cross-section and its inner wall is coated with a hydrophilic nano-coating.

4. The semiconductor structure for enhanced heat dissipation according to claim 1, characterized in that: The phase change material (9) is paraffin or a metal alloy.

5. The semiconductor structure for enhanced heat dissipation according to claim 1, characterized in that: The substrate (1) is made of copper and has a thickness of 1-5 mm.

6. The semiconductor structure for enhanced heat dissipation according to claim 1, characterized in that: The distance between adjacent grooves (2) is 0.5-3mm.

7. The semiconductor structure for enhanced heat dissipation according to claim 1, characterized in that: The substrate (1), the first thermal conductive layer (3), the heat dissipation structure, and the second thermal conductive layer (6) are all encapsulated within the encapsulation layer (8).

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