Power module

Abstract

The utility model provides a power module. The power module comprises a ceramic substrate, and the ceramic substrate comprises a substrate and a first metal layer located on the front face of the substrate. In the power module, a plurality of base islands are distributed in a first metal layer on the front surface of a substrate of a ceramic substrate, and a plurality of power devices are mounted on corresponding base islands in the plurality of base islands; the temperature-sensitive elements are mounted on the corresponding base islands in the plurality of base islands and are positioned among the plurality of power devices, so that the temperature-sensitive elements and the plurality of power devices are jointly mounted on the ceramic substrate, and the temperature-sensitive elements are positioned among the plurality of power devices, so that the temperature-sensitive elements can quickly and accurately monitor the junction temperatures of the power devices; therefore, the system can carry out over-temperature protection in time, the residual space on the front surface of the ceramic substrate can be fully utilized, the size of the power module can be reduced, and the miniaturization of the power module can be realized.

Description

Technical Field

[0001] This utility model relates to the field of packaging technology, and in particular to a power module. Background Technology

[0002] Currently, when power modules use built-in negative temperature coefficient (NTC) resistors to detect temperature, the NTC resistors are positioned at the edge of the insulating ceramic substrate. This results in a large temperature difference between the temperature reflected by the NTC resistor and the junction temperature of the power device, which is detrimental to temperature protection. Furthermore, current power modules implementing three-phase inverters typically combine three half-bridge modules or use integrated packages, such as the A1 half-bridge package and the EasyPACK Six Pack. TM 1B and EconoPACK TM 2. Packaging, but these packaging forms are all relatively large in size. Utility Model Content

[0003] One of the purposes of this invention is to provide a power module that enables temperature-sensitive elements to accurately monitor the junction temperature of power devices, which is beneficial for the system to perform over-temperature protection in a timely manner and can also reduce the size of the power module.

[0004] To achieve the above objectives, the power module provided by this utility model includes a ceramic substrate. The ceramic substrate includes a substrate and a first metal layer located on the front side of the substrate. The first metal layer includes a first base island, a second base island, a third base island, a fourth base island, and a fifth base island that are separated from each other. The first base island, the fifth base island, the second base island, the third base island, and the fourth base island are arranged sequentially in a first direction. The first base island carries a first power device, a second power device, and a third power device. The second base island, the third base island, and the fourth base island carry a fourth power device, a fifth power device, and a sixth power device, respectively. The fifth base island carries a temperature-sensitive element.

[0005] Optionally, the first power device, the second power device, and the third power device are respectively the upper bridge U-phase power device, the upper bridge V-phase power device, and the upper bridge W-phase power device, and the fourth power device, the fifth power device, and the sixth power device are respectively the lower bridge U-phase power device, the lower bridge V-phase power device, and the lower bridge W-phase power device.

[0006] Optionally, the upper bridge U-phase power device, the upper bridge V-phase power device, and the upper bridge W-phase power device are located on the first side of the temperature-sensitive element, and the lower bridge U-phase power device, the lower bridge V-phase power device, and the lower bridge W-phase power device are located on the second side of the temperature-sensitive element.

[0007] Optionally, the first end of the temperature-sensitive element is electrically connected to the fifth base island and the fifth base island is electrically connected to the corresponding second temperature pin, and the second end of the temperature-sensitive element is electrically connected to the corresponding first temperature pin.

[0008] Optionally, the power module also includes a sixth base island, where the second end of the temperature-sensitive element is electrically connected to the sixth base island and then electrically connected to the first temperature pin.

[0009] Optionally, the first end of the temperature-sensitive element is located on the fifth base island, and the second end of the temperature-sensitive element is located on the sixth base island. The fifth base island and the sixth base island are electrically connected to the second temperature pin and the first temperature pin, respectively.

[0010] Optionally, the temperature-sensitive element is a negative temperature coefficient temperature-sensitive element.

[0011] Optionally, the third terminals of the upper bridge U-phase power device, the upper bridge V-phase power device, and the upper bridge W-phase power device are located on the first base island; the third terminals of the lower bridge U-phase power device, the lower bridge V-phase power device, and the lower bridge W-phase power device are located on the second, third, and fourth base islands, respectively; the first terminals of the upper bridge U-phase power device, the upper bridge V-phase power device, and the upper bridge W-phase power device are electrically connected to the gate pins of the U-phase, V-phase, and W-phase upper bridges, respectively; the upper bridge U-phase power device... The second terminal of the upper bridge V-phase power device, the second terminal of the upper bridge W-phase power device, and the second terminal of the upper bridge W-phase power device are respectively electrically connected to the emitter pin of the upper bridge U-phase, the emitter pin of the upper bridge V-phase, and the emitter pin of the upper bridge W-phase; the second terminal of the upper bridge U-phase power device, the second terminal of the upper bridge V-phase power device, and the second terminal of the upper bridge W-phase power device are respectively electrically connected to the output pin of the upper bridge U-phase, the output pin of the upper bridge V-phase, and the output pin of the upper bridge W-phase; the third terminal of the upper bridge U-phase power device, the third terminal of the upper bridge V-phase power device, and the third terminal of the upper bridge W-phase power device are electrically connected to the DC positive pin via the first base island;

[0012] The first terminal of the lower bridge U-phase power device, the first terminal of the lower bridge V-phase power device, and the first terminal of the lower bridge W-phase power device are electrically connected to the gate pins of the U-phase, V-phase, and W-phase lower bridges, respectively. The second terminal of the lower bridge U-phase power device, the second terminal of the lower bridge V-phase power device, and the second terminal of the lower bridge W-phase power device are electrically connected to the emitter pins of the U-phase, V-phase, and W-phase lower bridges, respectively. The second terminal of the lower bridge U-phase power device, the second terminal of the lower bridge V-phase power device, and the second terminal of the lower bridge W-phase power device are electrically connected to the negative DC pins of the U-phase, V-phase, and W-phase, respectively. The third terminal of the lower bridge U-phase power device, the third terminal of the lower bridge V-phase power device, and the third terminal of the lower bridge W-phase power device are electrically connected to the output pins of the U-phase, V-phase, and W-phase, respectively, via the second base island, the third base island, and the fourth base island.

[0013] Optionally, the DC positive pin, U-phase output pin, V-phase output pin, W-phase output pin, U-phase DC negative pin, V-phase DC negative pin, and W-phase DC negative pin are located on the first side of the power module and arranged in sequence; the U-phase upper bridge gate pin, U-phase upper bridge emitter pin, V-phase upper bridge gate pin, V-phase upper bridge emitter pin, W-phase upper bridge gate pin, W-phase upper bridge emitter pin, U-phase lower bridge gate pin, U-phase lower bridge emitter pin, V-phase lower bridge gate pin, V-phase lower bridge emitter pin, W-phase lower bridge gate pin, and W-phase lower bridge emitter pin are located on the second side of the power module and arranged in sequence.

[0014] Optionally, the second side of the power module also includes multiple sets of NC pins; the multiple sets of NC pins include a first set of NC pins located between the U-phase upper bridge gate pin and the U-phase upper bridge emitter pin, a second set of NC pins located between the U-phase upper bridge emitter pin and the V-phase upper bridge gate pin, a third set of NC pins located between the V-phase upper bridge gate pin and the V-phase upper bridge emitter pin, a fourth set of NC pins located between the second temperature pin and the first temperature pin, a fifth set of NC pins located between the first temperature pin and the U-phase lower bridge gate pin, and a sixth set of NC pins adjacent to the W-phase lower bridge emitter pin.

[0015] Optionally, the power device is a MOS transistor, with the gate of the MOS transistor serving as the first terminal of the power device, the drain of the MOS transistor serving as the third terminal of the power device and located on the base island corresponding to each power device, and the source of the MOS transistor serving as the second terminal of the power device.

[0016] Optionally, the power device is an RC-IGBT, with the gate of the RC-IGBT serving as the first terminal of the power device, the collector of the RC-IGBT serving as the third terminal of the power device and located on the base island corresponding to each power device, and the emitter of the RC-IGBT serving as the second terminal of the power device.

[0017] Optionally, the power devices are IGBTs and fast recovery diodes. The gate of the IGBT serves as the first terminal of the power device. The second terminal of the IGBT is electrically connected to the anode of the fast recovery diode and serves as the second terminal of the power device. The third terminal of the IGBT is electrically connected to the cathode of the fast recovery diode and serves as the third terminal of the power device. The collector of the IGBT and the cathode of the fast recovery diode are located on the base islands corresponding to each power device.

[0018] Optionally, the ceramic substrate further includes a second metal layer located on the back side of the substrate, the second metal layer being a heat dissipation layer.

[0019] The power module provided by this utility model includes a ceramic substrate, multiple power devices, multiple base islands, and a temperature-sensitive element. The multiple base islands are distributed on the first metal layer of the ceramic substrate. The multiple power devices are mounted on corresponding base islands of the multiple base islands. The temperature-sensitive element is mounted on corresponding base islands of the multiple base islands and located between the multiple power devices. In this way, the temperature-sensitive element and the multiple power devices are jointly mounted on corresponding base islands and the temperature-sensitive element is located between the multiple power devices. Therefore, the temperature-sensitive element can quickly and accurately monitor the junction temperature of the power devices, which is beneficial for the system to perform over-temperature protection in a timely manner. It can also make full use of the remaining space on the front side of the ceramic substrate, which helps to reduce the size of the power module and realize the miniaturization of the power module. Attached Figure Description

[0020] Figure 1 This is an internal structural diagram of a power module provided in an embodiment of the present invention.

[0021] Figure 2 This is an internal structural diagram of a power module provided in another embodiment of the present invention.

[0022] Figure 3 A circuit diagram of a power module provided in one embodiment of this utility model.

[0023] Explanation of reference numerals in the attached figures: 100-Ceramic substrate; 101-First base island; 102-Second base island; 103-Third base island; 104-Fourth base island; 105-Fifth base island; 106-Sixth base island; 200-Temperature-sensitive element; 300-Fast recovery diode; 301-First bonding wire; 302-Second bonding wire; 400-Molded encapsulator; 401-First side; 402-Second side. Detailed Implementation

[0024] To enable the temperature-sensitive element to accurately monitor the chip junction temperature and reduce the size of the power module, the power module provided in this application mounts the temperature-sensitive element and multiple power devices together on a ceramic substrate, with the temperature-sensitive element located between the multiple power devices. This allows the temperature-sensitive element to be closer to the power devices, enabling it to quickly and accurately monitor the junction temperature of the power devices. This facilitates timely over-temperature protection of the system. Furthermore, this method makes full use of the remaining space on the front side of the ceramic substrate, helping to reduce the size of the power module and achieve miniaturization.

[0025] The power module proposed in this utility model will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of this utility model will become clearer from the following description. It should be noted that the drawings are all in a very simplified form and use non-precise proportions, and are only used to facilitate and clarify the illustration of the embodiments of this utility model.

[0026] In this embodiment, the ceramic substrate 100 includes a substrate, a first metal layer on the front side of the substrate, and a second metal layer on the back side of the substrate. The first metal layer on the front side of the power device is a patterned metal layer, including multiple spaced base islands. The temperature-sensitive element 200 and the power device are both mounted on their respective base islands, with the base islands corresponding to the multiple power devices distributed on both sides of the base island corresponding to the temperature-sensitive element 200. The substrate material can be various ceramic materials such as alumina. In this embodiment, the metal layer material is copper. In other embodiments, the metal layer material can also be other metals such as aluminum or nickel. The second metal layer is a heat dissipation layer.

[0027] Figure 1 This is a planar structural diagram of a power module provided according to an embodiment of the present invention. (Reference) Figure 1 As shown, the power module includes a ceramic substrate 100, which includes a substrate and a first metal layer located on the front side of the substrate. The first metal layer includes a first base island 101, a second base island 102, a third base island 103, a fourth base island 104, and a fifth base island 105 that are separated from each other. The first base island 101, the fifth base island 105, the second base island 102, the third base island 103, and the fourth base island 104 are arranged sequentially in a first direction.

[0028] The first base island 101 carries the first power device Q11, the second power device Q12 and the third power device Q13; the second base island 102, the third base island 103 and the fourth base island 104 respectively carry the fourth power device Q21, the fifth power device Q22 and the sixth power device Q23.

[0029] The fifth base island 105 carries the temperature-sensitive element 200.

[0030] For example, the ceramic substrate 100 may be a direct-bonded copper (DBC) ceramic substrate, but is not limited to this. Direct-bonded copper ceramic substrates have excellent thermal cycling performance, effectively resisting thermal stress during the repeated heating and cooling processes of the power module, reducing problems such as delamination and cracking caused by mismatched coefficients of thermal expansion. In power modules, direct-bonded copper ceramic substrates can serve as a chip support platform. Their excellent heat dissipation and electrical performance ensure stable operation of the chip under high-power conditions. Furthermore, due to their mature manufacturing process and relatively low cost, they have certain advantages in some power module applications where cost is more sensitive or performance requirements are slightly lower.

[0031] For example, the ceramic substrate 100 is rectangular, but not limited thereto. The ceramic substrate 100 also includes a sixth base island 106. On the first metal layer of the ceramic substrate 100, the first base island 101, the fifth base island 105, the second base island 102, the third base island 103, and the fourth base island 104 are arranged sequentially in a first direction. The fifth base island 105 and the sixth base island 106 are disposed between the second base island 102 and the first base island 101. The sixth base island 106 is disposed near the edge of the ceramic substrate 100. The fifth base island 105 is disposed within the space defined by the first base island 101, the second base island 102, and the sixth base island 106.

[0032] For example, the pins are made of metal, such as one or more of W, Al, Cu, Ti, Ag, Au, Pt, and Ni.

[0033] In this embodiment, the power module includes a first power device Q11, a second power device Q12, a third power device Q13, a fourth power device Q21, a fifth power device Q22, and a sixth power device Q23. For example, the power module is a three-phase inverter power module, referencing... Figure 1 and Figure 2 As shown, the first power device Q11, the second power device Q12, and the third power device Q13 are the upper bridge U-phase power device, the upper bridge V-phase power device, and the upper bridge W-phase power device, respectively. The fourth power device Q21, the fifth power device Q22, and the sixth power device Q23 are the lower bridge U-phase power device, the lower bridge V-phase power device, and the lower bridge W-phase power device, respectively.

[0034] refer to Figure 1 and Figure 2 As shown, the temperature-sensitive element 200 has two opposing sides. The upper bridge U-phase power device Q11, upper bridge V-phase power device Q12, and upper bridge W-phase power device Q13 are located on the first side of the temperature-sensitive element 200, while the lower bridge U-phase power device Q21, lower bridge V-phase power device Q22, and lower bridge W-phase power device Q23 are located on the second side. This allows the temperature-sensitive element 200 to be positioned at the center of the ceramic substrate 100, enabling faster and more accurate monitoring of the power device junction temperature. This facilitates timely over-temperature protection of the system. The upper and lower bridge power devices are separated by the temperature-sensitive element 200, preventing heat accumulation towards the center and reducing the overall maximum junction temperature of the power module.

[0035] In this application, the power device may include a MOS device, an RC-IGBT, or an IGBT device that works in conjunction with a fast recovery diode, but is not limited to these. The IGBT and the fast recovery diode may be integrated into a single chip (i.e., the power device is an RC-IGBT device), or the IGBT device and the fast recovery diode may be located on different chips. An IGBT is an insulated-gate bipolar transistor, primarily used in high-voltage and high-current applications, such as frequency converters and drive systems for electric vehicles.

[0036] The following explanation uses the example of upper bridge U-phase power device Q11, upper bridge V-phase power device Q12, upper bridge W-phase power device Q13, lower bridge U-phase power device Q21, lower bridge V-phase power device Q22, and lower bridge W-phase power device Q23, all of which are IGBT devices with independently installed fast recovery diodes outside the IGBT devices.

[0037] In one embodiment of this application, the temperature-sensitive element 200 is single-ended soldered. Specifically, refer to... Figure 1 As shown, the first end of the temperature-sensitive element 200 is soldered to the fifth base island 105, and the fifth base island 105 is electrically connected to the corresponding second temperature pin T2 via the first bonding wire 301. The second end of the temperature-sensitive element 200 is electrically connected to the sixth base island 106 via the first bonding wire 301, and then electrically connected to the first temperature pin T1. In this embodiment, the sixth base island 106 serves as a transition base island. In other embodiments, the other end of the temperature-sensitive element 200 can also be directly connected to the first temperature pin T1 via the first bonding wire 301.

[0038] In another embodiment of this application, the temperature-sensitive element 200 is double-ended welded. Figure 2 This is an internal structural diagram of a power module provided according to another embodiment of the present invention. Specifically, refer to... Figure 2 As shown, the first end of the temperature-sensitive element 200 is soldered to the fifth base island 105, and the second end of the temperature-sensitive element 200 is soldered to the sixth base island 106. The fifth base island 105 and the sixth base island 106 are electrically connected to the second temperature pin T2 and the first temperature pin T1 respectively through the first bonding wire 301.

[0039] It should be noted that when the temperature-sensitive element 200 is soldered at one end, the thermal time constant is relatively small. However, when electrical connection is achieved by directly wire bonding to the electrode at the other end (which is not soldered), pressure and other factors need to be controlled to avoid damage to the temperature-sensitive element. When the temperature-sensitive element 200 is soldered at both ends, the thermal time constant is relatively large, and the risk of damage to the resistor by wire bonding is avoided. Therefore, the type and soldering method of the temperature-sensitive element 200 can be flexibly selected according to the application scenario.

[0040] For example, the temperature-sensitive element 200 can be a negative temperature coefficient (NTC) resistor, but is not limited to this.

[0041] For details, please refer to Figure 1 and Figure 2 As shown, the third terminal of the upper bridge U-phase power device Q11, the third terminal of the upper bridge V-phase power device Q12, and the third terminal of the upper bridge W-phase power device Q13 are located on the first base island 101; the third terminal of the lower bridge U-phase power device Q21, the third terminal of the lower bridge V-phase power device Q22, and the third terminal of the lower bridge W-phase power device Q23 are located on the second base island 102, the third base island 103, and the fourth base island 104, respectively.

[0042] For more specific details, please refer to Figure 1 , Figure 2 and Figure 3 As shown, the first terminal of the upper bridge U-phase power device Q11, the first terminal of the upper bridge V-phase power device Q12, and the first terminal of the upper bridge W-phase power device Q13 are electrically connected to the U-phase upper bridge gate pin UHG, the V-phase upper bridge gate pin VHG, and the W-phase upper bridge gate pin WHG respectively via the first bonding wire 301.

[0043] The second terminals of the upper bridge U-phase power device Q11, the upper bridge V-phase power device Q12, and the upper bridge W-phase power device Q13 are electrically connected to the upper bridge emitter pins UHE, VHE, and WHE of the U-phase, V-phase, and W-phase, respectively, via the first bonding wire 301; the second terminals of the upper bridge U-phase power device Q11, the upper bridge V-phase power device Q12, and the upper bridge W-phase power device Q13 are also electrically connected to the output pins U, V, and W of the U-phase, V-phase, and W-phase, respectively, via the second bonding wire 302.

[0044] The third terminal of the upper bridge U-phase power device Q11, the third terminal of the upper bridge V-phase power device Q12, and the third terminal of the upper bridge W-phase power device Q13 are electrically connected to the DC positive pin P via the first base island 101.

[0045] The first terminal of the lower bridge U-phase power device Q21, the first terminal of the lower bridge V-phase power device Q22, and the first terminal of the lower bridge W-phase power device Q23 are respectively electrically connected to the U-phase lower bridge gate pin ULG, the V-phase lower bridge gate pin VLG, and the W-phase lower bridge gate pin WLG.

[0046] The second terminal of the lower bridge U-phase power device Q21, the second terminal of the lower bridge V-phase power device Q22, and the second terminal of the lower bridge W-phase power device Q23 are electrically connected to the emitter pin ULE of the lower bridge U-phase, the emitter pin VLE of the lower bridge V-phase, and the emitter pin WLE of the lower bridge W-phase via the first bonding wire 301, respectively.

[0047] The second terminal of the lower bridge U-phase power device Q21, the second terminal of the lower bridge V-phase power device Q22, and the second terminal of the lower bridge W-phase power device Q23 are also electrically connected to the U-phase DC negative pin NU, the V-phase DC negative pin NV, and the W-phase DC negative pin NW respectively via the second bonding wire 302.

[0048] The third terminal of the lower bridge U-phase power device Q21, the third terminal of the lower bridge V-phase power device Q22, and the third terminal of the lower bridge W-phase power device Q23 are electrically connected to the U-phase output pin U, the V-phase output pin V, and the W-phase output pin W via the second base island 102, the third base island 103, and the fourth base island 104, respectively.

[0049] refer to Figure 1 As shown, the power module includes multiple pins arranged on the side of the ceramic substrate 100. At least some electrodes of the power device and the temperature-sensitive element 200 are electrically connected to the corresponding pins via bonding wires. The multiple pins are as follows:

[0050] P: Positive DC pin

[0051] U: U-phase output pin

[0052] V: V-phase output pin

[0053] W: W-phase output pin

[0054] NU: U-phase DC negative pin

[0055] NV: V-phase DC negative pin

[0056] NW: W-phase DC negative pin

[0057] UHG: U-phase upper bridge gate pin

[0058] UHE: Emitter pin of U-phase upper bridge

[0059] VHG: V-phase upper bridge gate pin

[0060] VHE: Emitter pin of V-phase upper bridge

[0061] WHG: W-phase upper bridge gate pin

[0062] WHE: Emitter pin of the upper bridge of phase W

[0063] ULG: U-phase lower bridge gate pin

[0064] ULE: Emitter pin of U-phase lower bridge

[0065] VLG: V-phase lower bridge gate pin

[0066] VLE: Emitter pin of V-phase lower bridge

[0067] WLG: W-phase lower bridge gate pin

[0068] WLE: Emitter pin of the lower bridge of phase W

[0069] Among them, the DC positive pin P, the U-phase output pin U, the V-phase output pin V, the W-phase output pin W, the U-phase DC negative pin NU, the V-phase DC negative pin NV, and the W-phase DC negative pin are arranged sequentially along the first side 401 of the power module.

[0070] The U-phase upper bridge gate pin UHG, U-phase upper bridge emitter pin UHE, V-phase upper bridge gate pin VHG, V-phase upper bridge emitter pin VHE, W-phase upper bridge gate pin WHG, W-phase upper bridge emitter pin WHE, U-phase lower bridge gate pin ULG, U-phase lower bridge emitter pin ULE, V-phase lower bridge gate pin VLG, V-phase lower bridge emitter pin VLE, ​​W-phase lower bridge gate pin WLG, and W-phase lower bridge emitter pin WLE are arranged sequentially along the second side 402 of the power module.

[0071] The second side 402 of the power module also includes multiple sets of NC pins. These multiple sets of NC pins include: a first set of NC pins located between the U-phase upper bridge gate pin UHG and the U-phase upper bridge emitter pin UHE; a second set of NC pins located between the U-phase upper bridge emitter pin UHE and the V-phase upper bridge gate pin VHG; a third set of NC pins located between the V-phase upper bridge gate pin VHG and the V-phase upper bridge emitter pin VHE; a fourth set of NC pins located between the second temperature pin T2 and the first temperature pin T1; a fifth set of NC pins located between the first temperature pin T1 and the U-phase lower bridge gate pin ULG; and a sixth set of NC pins located on the side of the W-phase lower bridge emitter pin WLE.

[0072] In this application, the power device can be a MOS transistor, wherein the gate of the MOS transistor serves as the first terminal of the power device, the drain of the MOS transistor serves as the second terminal of the power device and is located on the base island corresponding to each power device, and the source of the MOS transistor serves as the third terminal of the power device.

[0073] In this application, the power device can also be an RC-IGBT, wherein the gate of the RC-IGBT serves as the first terminal of the power device, the collector of the RC-IGBT serves as the third terminal of the power device and is located on the base island corresponding to each power device, and the emitter of the RC-IGBT serves as the second terminal of the power device.

[0074] In this application, the power device may also be an IGBT and a fast recovery diode, wherein the gate of the IGBT serves as the first terminal of the power device, the emitter of the IGBT is electrically connected to the anode of the fast recovery diode and serves as the second terminal of the power device, the collector of the IGBT is electrically connected to the cathode of the fast recovery diode and serves as the third terminal of the power device, and the collector of the IGBT and the cathode of the fast recovery diode are located on the base islands corresponding to each power device.

[0075] The linewidth of the first bonding line 301 can be smaller than the linewidth of the second bonding line 302. The upper bridge U-phase power device Q11, upper bridge V-phase power device Q12, upper bridge W-phase power device Q13, lower bridge U-phase power device Q21, lower bridge V-phase power device Q22, and lower bridge W-phase power device Q23 can also be connected to the corresponding fast recovery diode 300 through the two second bonding lines 302. The fast recovery diode 300 can also be connected to the corresponding pin through the two second bonding lines 302.

[0076] Empty pins (NC) can connect to other components outside the power module. For example, these empty pins can be inserted into the PCB board without electrical connection. These extra empty pins make the power module more stable when inserted into the PCB board and mounted on a heatsink. They also provide better support and resistance to deformation when the power module encounters mechanical vibrations during use, maintaining the module's mounting stability and mechanical reliability. Furthermore, pins NC3, NC6, NC7, NC10, NC11, NC12, NC1, NC2, NC4, NC5, NC8, and NC9 are retained before molding. This eliminates the need to change the pin design or the production mold for the molding compound 400, and also eliminates the need to change the packaging process, helping to save manufacturing costs.

[0077] refer to Figure 1 and Figure 2 As shown, the power module also includes a molding compound 400, which encapsulates multiple power devices, multiple fast recovery diodes 300, multiple first bonding wires 301, and multiple second bonding wires 302. The molding compound 400 encapsulates one end of multiple pins, with the other end of some pins exposed outside the molding compound 400. The material of the molding compound 400 includes, but is not limited to, epoxy molding compound.

[0078] In this embodiment, the power module can be a power module for driving an air conditioner compressor, but it is not limited to this. Since existing packaging methods are relatively large, they are wasteful for scenarios where the overall power of the air conditioner is low. This means that there is a lot of remaining space inside the module after mounting the chip. Furthermore, the large module size and weight pose challenges in terms of installation and mechanical stress. Therefore, for scenarios with low power, such as air conditioners, the temperature-sensitive element 200 can be mounted on the ceramic substrate 100 to reduce the size of the power module.

[0079] The power module provided by this utility model includes a ceramic substrate 100, multiple power devices, multiple base islands, and a temperature-sensitive element 200. The multiple power devices are mounted on multiple base islands of the first metal layer of the ceramic substrate 100; the temperature-sensitive element 200 is mounted on the corresponding base island of the first metal layer of the ceramic substrate 100 and is located between the multiple power devices. In this way, the temperature-sensitive element 200 and the multiple power devices are jointly mounted on the ceramic substrate 100 and the temperature-sensitive element 200 is located between the multiple power devices. Therefore, the temperature-sensitive element 200 can quickly and accurately monitor the junction temperature of the power devices, which is beneficial for the system to perform over-temperature protection in a timely manner. It can also make full use of the remaining space on the front side of the ceramic substrate 100, which helps to reduce the size of the power module and realize the miniaturization of the power module.

[0080] The above description is only a description of the preferred embodiment of the present utility model and is not intended to limit the scope of the present utility model. Any person skilled in the art can make possible changes and modifications to the technical solution of the present utility model by using the methods and techniques disclosed above without departing from the spirit and scope of the present utility model. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present utility model without departing from the content of the technical solution of the present utility model shall fall within the protection scope of the technical solution of the present utility model.

Claims

1. A power module, characterized in that, include: A ceramic substrate, the ceramic substrate including a substrate and a first metal layer located on the front side of the substrate, the first metal layer including a first base island, a second base island, a third base island, a fourth base island and a fifth base island separated from each other, the first base island, the fifth base island, the second base island, the third base island and the fourth base island being arranged sequentially in a first direction; The first base island carries a first power device, a second power device, and a third power device; The second base island, the third base island, and the fourth base island respectively carry the fourth power device, the fifth power device, and the sixth power device; The fifth base island carries the temperature-sensitive element.

2. The power module as described in claim 1, characterized in that, The first power device, the second power device, and the third power device are respectively the upper bridge U-phase power device, the upper bridge V-phase power device, and the upper bridge W-phase power device, and the fourth power device, the fifth power device, and the sixth power device are respectively the lower bridge U-phase power device, the lower bridge V-phase power device, and the lower bridge W-phase power device.

3. The power module as described in claim 2, characterized in that, The upper bridge U-phase power device, upper bridge V-phase power device, and upper bridge W-phase power device are located on the first side of the temperature-sensitive element, and the lower bridge U-phase power device, lower bridge V-phase power device, and lower bridge W-phase power device are located on the second side of the temperature-sensitive element.

4. The power module as described in claim 3, characterized in that, The first end of the temperature-sensitive element is electrically connected to the fifth base island, and the fifth base island is electrically connected to the corresponding second temperature pin. The second end of the temperature-sensitive element is electrically connected to the corresponding first temperature pin.

5. The power module as described in claim 4, characterized in that, The power module also includes a sixth base island, and the second end of the temperature-sensitive element is electrically connected to the sixth base island and then electrically connected to the first temperature pin.

6. The power module as described in claim 4, characterized in that, The first end of the temperature-sensitive element is located on the fifth base island, and the second end of the temperature-sensitive element is located on the sixth base island. The fifth base island and the sixth base island are electrically connected to the second temperature pin and the first temperature pin, respectively.

7. The power module as described in claim 1, characterized in that, The temperature-sensitive element is a negative temperature coefficient temperature-sensitive element.

8. The power module as described in claim 2, characterized in that, The third terminal of the upper bridge U-phase power device, the third terminal of the upper bridge V-phase power device, and the third terminal of the upper bridge W-phase power device are located on the first base island. The third terminal of the lower bridge U-phase power device, the third terminal of the lower bridge V-phase power device, and the third terminal of the lower bridge W-phase power device are respectively located on the second base island, the third base island, and the fourth base island. The first terminal of the upper bridge U-phase power device, the first terminal of the upper bridge V-phase power device, and the first terminal of the upper bridge W-phase power device are respectively electrically connected to the gate pin of the U-phase upper bridge, the gate pin of the V-phase upper bridge, and the gate pin of the W-phase upper bridge. The second terminal of the upper bridge U-phase power device, the second terminal of the upper bridge V-phase power device, and the second terminal of the upper bridge W-phase power device are respectively electrically connected to the emitter pin of the upper bridge U-phase, the emitter pin of the upper bridge V-phase, and the emitter pin of the upper bridge W-phase; the second terminal of the upper bridge U-phase power device, the second terminal of the upper bridge V-phase power device, and the second terminal of the upper bridge W-phase power device are also respectively electrically connected to the output pin of the upper bridge U-phase, the output pin of the upper bridge V-phase, and the output pin of the upper bridge W-phase. The third terminal of the upper bridge U-phase power device, the third terminal of the upper bridge V-phase power device, and the third terminal of the upper bridge W-phase power device are electrically connected to the DC positive pin via the first base island. The first terminal of the lower bridge U-phase power device, the first terminal of the lower bridge V-phase power device, and the first terminal of the lower bridge W-phase power device are respectively electrically connected to the gate pin of the U-phase lower bridge, the gate pin of the V-phase lower bridge, and the gate pin of the W-phase lower bridge. The second terminal of the lower bridge U-phase power device, the second terminal of the lower bridge V-phase power device, and the second terminal of the lower bridge W-phase power device are respectively electrically connected to the emitter pin of the U-phase lower bridge, the emitter pin of the V-phase lower bridge, and the emitter pin of the W-phase lower bridge. The second terminal of the lower bridge U-phase power device, the second terminal of the lower bridge V-phase power device, and the second terminal of the lower bridge W-phase power device are respectively electrically connected to the U-phase DC negative pin, the V-phase DC negative pin, and the W-phase DC negative pin. The third terminal of the lower bridge U-phase power device, the third terminal of the lower bridge V-phase power device, and the third terminal of the lower bridge W-phase power device are electrically connected to the U-phase output pin, the V-phase output pin, and the W-phase output pin respectively via the second base island, the third base island, and the fourth base island.

9. The power module as described in claim 8, characterized in that, The DC positive pin, the U-phase output pin, the V-phase output pin, the W-phase output pin, the U-phase DC negative pin, the V-phase DC negative pin, and the W-phase DC negative pin are located on the first side of the power module and arranged in sequence. The U-phase upper bridge gate pin, the U-phase upper bridge emitter pin, the V-phase upper bridge gate pin, the V-phase upper bridge emitter pin, the W-phase upper bridge gate pin, the W-phase upper bridge emitter pin, the U-phase lower bridge gate pin, the U-phase lower bridge emitter pin, the V-phase lower bridge gate pin, the V-phase lower bridge emitter pin, the W-phase lower bridge gate pin, and the W-phase lower bridge emitter pin are located on the second side of the power module and are arranged sequentially.

10. The power module as described in claim 9, characterized in that, The second side of the power module also includes multiple sets of NC pins; the multiple sets of NC pins include a first set of NC pins located between the U-phase upper bridge gate pin and the U-phase upper bridge emitter pin, a second set of NC pins located between the U-phase upper bridge emitter pin and the V-phase upper bridge gate pin, a third set of NC pins located between the V-phase upper bridge gate pin and the V-phase upper bridge emitter pin, a fourth set of NC pins located between the second temperature pin and the first temperature pin, a fifth set of NC pins located between the first temperature pin and the U-phase lower bridge gate pin, and a sixth set of NC pins adjacent to the W-phase lower bridge emitter pin.

11. The power module according to claim 1, characterized in that, The power device is a MOS transistor, with the gate of the MOS transistor serving as the first terminal of the power device, the drain of the MOS transistor serving as the third terminal of the power device and located on the base island corresponding to each power device, and the source of the MOS transistor serving as the second terminal of the power device.

12. The power module according to claim 1, characterized in that, The power device is an RC-IGBT, with the gate of the RC-IGBT serving as the first terminal of the power device, the collector of the RC-IGBT serving as the third terminal of the power device and located on the base island corresponding to each power device, and the emitter of the RC-IGBT serving as the second terminal of the power device.

13. The power module according to claim 1, characterized in that, The power devices are IGBTs and fast recovery diodes. The gate of the IGBT serves as the first terminal of the power device. The second terminal of the IGBT is electrically connected to the anode of the fast recovery diode and serves as the second terminal of the power device. The third terminal of the IGBT is electrically connected to the cathode of the fast recovery diode and serves as the third terminal of the power device. The collector of the IGBT and the cathode of the fast recovery diode are located on the base islands corresponding to each of the power devices.

14. The power module according to claim 1, characterized in that, The ceramic substrate further includes a second metal layer located on the back side of the substrate, the second metal layer being a heat dissipation layer.

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