Double-layer circuit single-side welding high-thermal-conductivity metal substrate

Abstract

The utility model relates to a double-layer circuit single-side welding high-thermal-conductivity metal substrate. The problems that in the prior art, a middle circuit conduction layer cannot meet the wiring requirements of high-density wires and a plurality of lamp bead bonding pads easily, and a substrate of the plurality of lamp bead bonding pads cannot meet the high heat conductivity easily are solved. The circuit board comprises an upper-layer circuit substrate structure, an insulation heat dissipation structure is arranged in the upper-layer circuit substrate structure, a heat conduction insulation assembly is arranged on the lower side of the upper-layer circuit substrate structure, an aluminum layer structure is arranged on the lower side of the heat conduction insulation assembly, and a via hole structure is arranged at the upper end of the upper-layer circuit substrate structure. The inner walls of the two circumferential sides of the heat conduction insulation assembly are connected with the insulation heat dissipation structure to form positioning. Compared with the prior art, the metal substrate has the advantages that the design of double circuit conduction layers is adopted, the design requirement of high-density wiring is met, the heat conductivity of the substrate is improved by adopting the special RCC insulating layer and the heat conduction insulating layer, and the high heat conduction requirement of the metal substrate is met.

Description

TECHNICAL FIELD

[0001] The utility model relates to circuit substrate technical field, concretely relates to a double -deck circuit single -sided welding high heat conduction metal substrate. BACKGROUND

[0002] Traditional heat dissipation material makes circuit substrate because of needing to consider insulating property, the glue thickness used for adhering copper foil layer needs to reach 60 to 120um to reach the insulating requirement, therefore the total thickness of metal basic product will be very big, and the heat dissipation effect is not ideal. If adopting the heat dissipation model of thermosetting polyimide doped with heat dissipation powder, although the product thickness can be reduced and the requirement of insulating property can be met, but because high temperature operation is needed when processing thermosetting polyimide, therefore the processing cost is very high, and effective mass production cannot be realized;In addition, the existing ordinary single -sided metal substrate design often only has one line conduction layer, cannot satisfy the wiring requirement of high -density wire and multiple lamp bead pads, and the substrate of multiple lamp bead pads is difficult to satisfy high thermal conductivity.

[0003] In order to solve the problems in the prior art, people have carried out long-term exploration and proposed various solutions. For example, Chinese patent documents disclose a high-thermal-conductivity metal substrate [CN201110309388.X], which comprises a copper foil layer, a metal layer, an insulating polymer layer with first heat dissipation powder and a heat-conducting adhesive layer with second heat dissipation powder, wherein the insulating polymer layer is composed of a top layer and a bottom layer, and the first heat dissipation powder is uniformly dispersed in at least one of the top layer and the bottom layer. Since the insulating polymer layer is a composite layer composed of a top layer and a bottom layer, and at least one of the top layer and the bottom layer has first heat dissipation powder, the above structure of the insulating polymer layer can make the insulating polymer layer have insulating property and heat dissipation effect, so that the overall thickness of the product is thinned, and the heat dissipation efficiency and voltage breakdown resistance are improved.

[0004] The above-mentioned scheme solves the problem of large thickness and high processing cost of the technical substrate to some extent, but the scheme still has many deficiencies, for example: the single-layer line conduction layer cannot satisfy the wiring requirement of high-density wire and multiple lamp bead pads, and the substrate of multiple lamp bead pads cannot satisfy high thermal conductivity. SUMMARY

[0005] The utility model aims at the above -mentioned problem, provides a double -deck circuit single -sided welding high heat conduction metal substrate.

[0006] To achieve the above object, the utility model discloses the following technical scheme is used: a double -deck circuit single -sided welding high -thermal conductivity metal substrate, including upper layer circuit substrate structure, the upper layer circuit substrate structure is equipped with insulating heat dissipation structure, the lower side of upper layer circuit substrate structure is provided with heat conducting insulation component, the lower side of heat conducting insulation component is provided with aluminum layer structure, and the upper end of upper layer circuit substrate structure is equipped with lead -through hole structure, and the circumferential two sides inner wall of heat conducting insulation component is connected with insulating heat dissipation structure and forms the positioning.

[0007] In the above-mentioned double-layer circuit single-sided welding high-thermal-conductivity metal substrate, the upper layer circuit substrate structure includes an RCC insulating layer, the upper end of the RCC insulating layer is provided with a copper-clad layer, the lower side of the RCC insulating layer is provided with a pure copper layer, and the copper-clad layer, the RCC insulating layer and the pure copper layer are integrally pressed and formed.

[0008] In the above-mentioned double-layer circuit single-sided welding high-thermal-conductivity metal substrate, the insulating heat dissipation structure includes heat insulation layers arranged on the upper and lower sides of the RCC insulating layer, the heat insulation layers are in contact with the copper-clad layer and the pure copper layer respectively, and the circumferential two sides of the heat insulation layers are provided with heat-conducting connecting strips arranged in a staggered manner.

[0009] In the above-mentioned double-layer circuit single-sided welding high-thermal-conductivity metal substrate, the heat-conducting connecting strips are connected to the side walls of the upper and lower heat insulation layers respectively, and the two adjacent heat-conducting connecting strips are arranged in a "7" shape in a staggered manner, and the outer wall of the heat-conducting connecting strip has a heat-conducting protruding part.

[0010] In the above-mentioned double-layer circuit single-sided welding high-thermal-conductivity metal substrate, the heat-conducting insulation component includes a heat-conducting insulating layer, the circumferential two sides of the heat-conducting insulating layer are provided with heat dissipation frame bodies extending upwards, and the axial inner wall of the heat dissipation frame body is provided with a heat-conducting positioning slot for inserting the heat-conducting protruding part.

[0011] In the above-mentioned double-layer circuit single-sided welding high-thermal-conductivity metal substrate, the upper end surface of the heat-conducting insulating layer is provided with a plurality of heat dissipation grooves arranged in a matrix.

[0012] In the above-mentioned double-layer circuit single-sided welding high-thermal-conductivity metal substrate, the heat dissipation frame bodies wrap the upper layer circuit substrate structure circumferentially, the heat dissipation gaps are formed between the inner wall of the heat dissipation frame body and the upper layer circuit substrate structure, and the upper end of the heat dissipation frame body is arranged in an open manner, i.e. the upper end of the heat dissipation gap is arranged in an open manner.

[0013] In the above-mentioned double-layer circuit single-sided welding high-thermal-conductivity metal substrate, the aluminum layer structure includes a bottom aluminum sheet, the circumferential wrapping of the bottom aluminum sheet has an insulating outer wall and the bottom has a welding surface.

[0014] In the above-mentioned double-layer circuit single-sided welding high-thermal-conductivity metal substrate, the bottom aluminum sheet is attached to the bottom of the heat-conducting insulating layer and is integrally pressed,

[0015] In the double-layer circuit single-sided welding high-thermal-conductivity metal substrate, the through-hole structure comprises a strip-shaped positioning slot arranged on the copper-clad layer, a limiting through slot is arranged in the strip-shaped positioning slot, and a plurality of circuit connection through holes penetrating through the copper-clad layer and the RCC insulating layer and communicating with the pure copper layer are arranged in the limiting through slot.

[0016] Compared with the prior art, the double-layer circuit through layer design meets the design requirements of high-density wiring, the special RCC insulating layer and thermal conductive insulating layer improve the thermal conductivity of the substrate to meet the high-thermal-conductivity requirement, the thermal conductive connecting strip and the heat dissipation frame improve the heat dissipation efficiency, the basic overheating does not affect the circuit connection, and the use effect is good. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 is a schematic diagram of the overall structure of the utility model;

[0018] Figure 2 is a side sectional view of the upper-layer circuit substrate structure in the utility model;

[0019] Figure 3 is a front sectional view of the upper-layer circuit substrate structure in the utility model;

[0020] Figure 4 is a schematic diagram of the structure when the thermal conductive insulating assembly is connected with the aluminum layer structure in the utility model;

[0021] Figure 5 is a schematic diagram of the through hole structure in the utility model;

[0022] In the drawing: upper-layer circuit substrate structure 1, RCC insulating layer 11, copper-clad layer 12, pure copper layer 13, insulating heat dissipation structure 2, heat insulation layer 21, thermal conductive connecting strip 22, thermal conductive protruding part 23, thermal conductive insulating assembly 3, thermal conductive insulating layer 31, heat dissipation frame 32, thermal conductive positioning slot 33, heat dissipation groove 34, heat dissipation gap 35, aluminum layer structure 4, bottom-layer aluminum sheet 41, insulating outer wall 42, welding surface 43, through hole structure 5, strip-shaped positioning slot 51, limiting through slot 52, circuit connection through hole 53. DETAILED DESCRIPTION

[0023] The utility model will be further explained in detail in combination with the drawings and specific embodiments.

[0024] For example, Figures 1-5As shown, a double-layer circuit single-sided welding high-thermal-conductivity metal substrate includes an upper-layer circuit substrate structure 1, the upper-layer circuit substrate structure 1 is provided with an insulating heat-dissipation structure 2, the lower side of the upper-layer circuit substrate structure 1 is provided with a thermal-conductivity insulating component 3, the lower side of the thermal-conductivity insulating component 3 is provided with an aluminum layer structure 4, and the upper end of the upper-layer circuit substrate structure 1 is provided with a through-hole structure 5, and the circumferential two sides of the insulating heat-dissipation structure 2 are connected to the inner walls of the thermal-conductivity insulating component 3 and form positioning.

[0025] The process flow of the basic substrate is as follows: cutting of the copper-clad layer 12 + insulating layer 11 + pure copper layer 13 → combination → pressing → drilling → copper plating → inner-layer exposure → etching of inner-layer circuit → pasting of thermal-conductivity insulating layer 31 → combination with aluminum base material → pressing → outer-layer exposure → outer-layer etching.

[0026] The upper-layer circuit substrate structure 1 includes an RCC insulating layer 11, the upper end of the RCC insulating layer 11 is provided with a copper-clad layer 12, and the lower side of the RCC insulating layer 11 is provided with a pure copper layer 13, and the copper-clad layer 12, the RCC insulating layer 11 and the pure copper layer 13 are integrally pressed and formed.

[0027] The copper-clad layer 12 and the pure copper layer 13 are insulated and separated by the RCC insulating layer 11, so as to avoid circuit stringing.

[0028] Obviously, the insulating heat-dissipation structure 2 includes heat-insulating layers 21 arranged on the upper and lower sides of the RCC insulating layer 11, the heat-insulating layers 21 are in contact with the copper-clad layer 12 and the pure copper layer 13 respectively, and the circumferential two sides of the heat-insulating layers 21 are provided with thermal-conductivity connecting strips 22 arranged in a staggered manner.

[0029] The insulating heat-dissipation structure 2 is mainly used for improving heat-dissipation effect and heat-insulation effect.

[0030] Further, the thermal-conductivity connecting strips 22 are connected to the side walls of the upper and lower heat-insulating layers 21 respectively, and the adjacent two thermal-conductivity connecting strips 22 are arranged in a “7”-shaped staggered manner, and the outer wall of the thermal-conductivity connecting strip 22 has a thermal-conductivity protruding part 23.

[0031] The thermal-conductivity connecting strips 22 are arranged for improving thermal-conductivity efficiency, and the staggered arrangement prevents uniform thermal conduction from being formed.

[0032] Further, the thermal-conductivity insulating component 3 includes a thermal-conductivity insulating layer 31, the circumferential two sides of the thermal-conductivity insulating layer 31 are provided with heat-dissipation frame bodies 32 arranged in an extending manner towards the upper side, and the axial inner wall of the heat-dissipation frame body 32 is provided with a thermal-conductivity positioning slot 33 for inserting the thermal-conductivity protruding part 23.

[0033] The heat-dissipation frame body 32 is connected and positioned to the thermal-conductivity connecting strip 22 by the thermal-conductivity positioning slot 33, and the heat of the thermal-conductivity connecting strip 22 can be guided to the heat-dissipation frame body 32, so as to improve the heat-dissipation area.

[0034] Specifically, the upper end surface of the thermal-conductivity insulating layer 31 is provided with a plurality of heat-dissipation grooves 34 arranged in a matrix manner.

[0035] The heat absorption material is arranged in the heat dissipation groove 34, so as to effectively reduce the working temperature of the pure copper 13.

[0036] More specifically, the heat dissipation frame 32 is wrapped around the upper layer circuit substrate structure 1 in a circumferential direction, and a heat dissipation gap 35 is formed between the inner wall of the heat dissipation frame 32 and the upper layer circuit substrate structure 1. The upper end of the heat dissipation frame 32 is open, that is, the upper end of the heat dissipation gap 35 is open.

[0037] The open heat dissipation gap 35 can quickly exchange heat between the heat dissipation frame 32 and the external heat conduction connecting strip 22.

[0038] In detail, the aluminum layer structure 4 includes a bottom aluminum sheet 41, and the bottom aluminum sheet 41 is wrapped in an insulating outer wall 42 in a circumferential direction and has a welding surface 43 at the bottom.

[0039] The insulating outer wall 42 is arranged to prevent the bottom aluminum sheet 41 from leaking electricity and to play an insulating protection role.

[0040] Preferably, the bottom aluminum sheet 41 is integrated with the bottom of the heat-conducting insulating layer 31 described above and is pressed together,

[0041] In addition, the through-hole structure 5 includes a strip-shaped positioning groove 51 arranged on the copper-clad layer 12, a limiting through groove 52 arranged in the strip-shaped positioning groove 51, and a plurality of circuit connecting through holes 53 arranged in the limiting through groove 52 and penetrating through the copper-clad layer 12 and the RCC insulating layer 11 and in communication with the pure copper layer 13.

[0042] The arrangement of the through-hole structure 5 can separate and limit the connecting wires, facilitating wire arrangement.

[0043] In summary, the principle of the embodiment is to arrange the RCC insulating layer 11 between the copper-clad layer 12 and the pure copper layer 13, and arrange the heat-conducting insulating assembly 3 on both sides of the RCC insulating layer 11 to conduct heat to the outside. Secondly, the heat-conducting insulating layer 31 and the heat dissipation frame 32 are arranged to disperse and conduct heat, improve the heat conductivity of the substrate, meet the high heat conductivity requirement, and adopt the design of the double-layer circuit through layer to meet the design requirement of high-density wiring.

[0044] The specific embodiments described herein are merely illustrative of the spirit of the present application. Those skilled in the art of the present application can make various modifications or supplements to the described specific embodiments or replace them with similar ways, but will not deviate from the spirit of the present application or exceed the scope defined by the appended claims.

[0045] Although the upper layer line substrate structure 1, the RCC insulating layer 11, the copper clad layer 12, the pure copper layer 13, the insulating heat dissipation structure 2, the heat insulation layer 21, the heat conduction connecting strip 22, the heat conduction protruding part 23, the heat conduction insulating assembly 3, the heat conduction insulating layer 31, the heat dissipation frame body 32, the heat conduction positioning slot 33, the heat dissipation groove 34, the heat dissipation gap 35, the aluminum layer structure 4, the bottom layer aluminum sheet 41, the insulating outer wall 42, the welding surface 43, the through hole structure 5, the strip-shaped positioning slot 51, the limiting through slot 52, the line connection through hole 53 and other terms are used more in the text, but the possibility of using other terms is not excluded. Using these terms is only to more conveniently describe and explain the essence of the utility model; it is contrary to the spirit of the utility model to interpret them as any kind of additional limitation.

Claims

1. A double layer circuit single-sided soldered high thermal conductivity metal substrate comprising an upper layer circuit substrate structure (1), characterized in that, The upper layer circuit substrate structure (1) is provided with an insulating heat dissipation structure (2), the lower side of the upper layer circuit substrate structure (1) is provided with a heat-conducting insulating component (3), the lower side of the heat-conducting insulating component (3) is provided with an aluminum layer structure (4), and the upper end of the upper layer circuit substrate structure (1) is provided with a through hole structure (5), and the circumferential two sides of the heat-conducting insulating component (3) are connected with the insulating heat dissipation structure (2) and form positioning.

2. The double-layered circuit single-sided soldered high thermal conductivity metal substrate according to claim 1, characterized in that, The upper layer circuit substrate structure (1) comprises an RCC insulating layer (11), the upper end of the RCC insulating layer (11) is provided with a copper clad layer (12), the lower side of the RCC insulating layer (11) is provided with a pure copper layer (13), and the copper clad layer (12), the RCC insulating layer (11) and the pure copper layer (13) are integrally pressed and formed.

3. The double-layered circuit single-sided soldered high thermal conductivity metal substrate according to claim 2, characterized in that, The insulating heat dissipation structure (2) comprises a heat insulation layer (21) arranged on the upper and lower sides of the RCC insulating layer (11), the heat insulation layer (21) is in contact with the copper clad layer (12) and the pure copper layer (13) respectively, and the circumferential two sides of the heat insulation layer (21) are provided with heat-conducting connecting strips (22) arranged in a staggered manner.

4. The double-layered circuit single-sided soldered high thermal conductivity metal substrate according to claim 3, characterized by The heat-conducting connecting strips (22) are connected with the side walls of the upper and lower heat insulation layers (21) respectively, and the adjacent two heat-conducting connecting strips (22) are arranged in a "7" shape in a staggered manner, and the outer wall of the heat-conducting connecting strip (22) has a heat-conducting protruding part (23).

5. The double-layered circuit single-sided soldered high thermal conductivity metal substrate according to claim 4, characterized in that, The heat-conducting insulating component (3) comprises a heat-conducting insulating layer (31), the circumferential two sides of the heat-conducting insulating layer (31) are provided with heat dissipation frame bodies (32) extending upwards, and the axial inner wall of the heat dissipation frame body (32) is provided with a heat-conducting positioning slot (33) for inserting the heat-conducting protruding part (23).

6. The double-layered circuit single-sided soldered high thermal conductivity metal substrate according to claim 5, characterized by The upper end surface of the heat-conducting insulating layer (31) is provided with a plurality of heat dissipation grooves (34) arranged in a matrix.

7. The double-layered circuit single-sided soldered high thermal conductivity metal substrate according to claim 5, characterized by The heat dissipation frame body (32) is wrapped around the upper layer circuit substrate structure (1) in a circumferential direction, and a heat dissipation gap (35) is formed between the inner wall of the heat dissipation frame body (32) and the upper layer circuit substrate structure (1), and the upper end of the heat dissipation frame body (32) is arranged in an open manner, i.e. the upper end of the heat dissipation gap (35) is arranged in an open manner.

8. The double-layered circuit single-sided soldered high thermal conductivity metal substrate according to claim 6, characterized in that, The aluminum layer structure (4) comprises a bottom aluminum sheet (41), the circumferential wrapping of the bottom aluminum sheet (41) has an insulating outer wall (42) and the bottom has a welding surface (43).

9. The double-layered circuit single-sided soldered high thermal conductivity metal substrate according to claim 8, characterized in that, The bottom aluminum sheet (41) is attached to the bottom of the heat-conducting insulating layer (31) and is integrally pressed.

10. The double-layered circuit single-sided soldered high thermal conductivity metal substrate according to claim 2, characterized by The through hole structure (5) comprises a strip-shaped positioning groove (51) arranged on the copper clad layer (12), the strip-shaped positioning groove (51) is provided with a limiting through groove (52), and a plurality of circuit connection through holes (53) penetrating through the copper clad layer (12) and the RCC insulating layer (11) and communicating with the pure copper layer (13) are arranged in the limiting through groove (52).

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