Low-temperature magnetron sputtering planar cathode structure
By designing a low-temperature magnetron sputtering planar cathode structure and using a water-cooling channel and a copper cooling plate to comprehensively cool the target material, the problem of target material thermal radiation was solved, and low-temperature coating and high-efficiency deposition were achieved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-13
- Publication Date
- 2026-04-14
AI Technical Summary
In existing technologies, during long-term magnetron sputtering coating processes, the temperature on the back of the target material remains stable at 250 degrees Celsius, generating a large amount of thermal radiation, which leads to uneven heat dissipation and affects the coating quality.
A low-temperature magnetron sputtering planar cathode structure was designed, which uses a water-cooling channel to comprehensively cool the back of the target and the area around the magnetic shoe, and combines a copper cooling plate to improve cooling efficiency. The target is fixed by a limiting component to prevent displacement and to maintain a seal in a vacuum environment.
This achieves comprehensive cooling of the target surface, reduces heat radiation during target sputtering, ensures coating is carried out under low-temperature conditions, and improves coating quality and deposition rate.
Smart Images
Figure CN224119095U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of magnetron sputtering technology, and in particular to a low-temperature magnetron sputtering planar cathode structure. Background Technology
[0002] Magnetron sputtering is a physical vapor deposition (PVD) process, belonging to the category of vacuum deposition processes. Due to its numerous advantages, including low deposition temperature, high film quality and uniformity, fast deposition rate, and ability to prepare large-area, uniform, and dense hard films, it is widely used in industrial coating applications.
[0003] In existing technologies, during long-term magnetron sputtering coating processes, the back of the target material can only be cooled by cooling components. The stable temperature of the target baffle is approximately 250 degrees Celsius, which generates a large amount of thermal radiation. Utility Model Content
[0004] The purpose of this invention is to solve the problems existing in the prior art by proposing a low-temperature magnetron sputtering planar cathode structure.
[0005] To achieve the above objectives, the present invention adopts the following technical solution:
[0006] A low-temperature magnetron sputtering planar cathode structure includes a cathode flange, a magnetic shoe disposed on the inner side of the cathode flange, a cooling plate disposed on the top of the magnetic shoe, a target material mounted on the cooling plate by a limiting component, a target material baffle disposed on the top of the cathode flange, a first water-cooling channel disposed inside the target material baffle of the cathode flange, and the first water-cooling channel inside the cathode flange and the target material baffle are connected.
[0007] Preferably, the magnetic boot is provided with a plurality of magnets, which are arranged in a horizontal array within the magnetic boot.
[0008] Preferably, the cooling plate is provided with a plurality of second water-cooling channels, and the material of the cooling plate is copper.
[0009] Preferably, the limiting component includes a target material pressure strip and a pressure groove. The target material pressure strip is disposed on the cooling plate, and the pressure groove is disposed on one side of the corresponding target material pressure strip. The outer periphery of the target material is convex, and the convexity of the target material is adapted to the pressure groove.
[0010] Preferably, a first sealing ring is provided on one side of the cathode flange, and a second sealing ring is provided between the cathode flange and the target baffle.
[0011] Preferably, the first water-cooling channel within the cathode flange and the target baffle is L-shaped after being connected.
[0012] Compared with the prior art, the beneficial effects of this utility model are:
[0013] This invention, through the setting of a first water-cooling channel, can be used in conjunction with a second water-cooling channel. While the second water-cooling channel cools the back of the target material, it can also absorb the heat generated during magnetron sputtering, thereby achieving comprehensive cooling of the target surface. This ensures that the heat received by the substrate is only generated by sputtering deposition, effectively reducing the thermal radiation during the target sputtering process and achieving low-temperature coating. Attached Figure Description
[0014] Figure 1 This is a cross-sectional view of a low-temperature magnetron sputtering planar cathode structure proposed in this utility model.
[0015] In the figure: 1. Cathode flange; 2. Magnetic shoe; 3. Magnet; 4. Cooling plate; 5. Target material pressure strip; 6. Target material; 7. Target material baffle; 8. Sealing ring; 9. Second sealing ring; 10. Pressure groove; 11. Second water cooling channel; 12. First water cooling channel. Detailed Implementation
[0016] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present utility model. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments.
[0017] Reference Figure 1 A low-temperature magnetron sputtering planar cathode structure includes a cathode flange 1, a magnetic shoe 2 disposed on the inner side of the cathode flange 1, a cooling plate 4 disposed on the top of the magnetic shoe 2, a target material 6 mounted on the cooling plate 4 via a limiting component, a target material baffle 7 disposed on the top of the cathode flange 1, and a first water-cooling channel 12 disposed inside the target material baffle 7 of the cathode flange 1, and the first water-cooling channel 12 inside the cathode flange 1 and the target material baffle 7 are connected. The cathode flange 1 and the target material baffle 7 can be integrally connected, or they can be detachably connected by detachable components, such as connecting the cathode flange 1 and the target material baffle 7 together by bolts or a snap-fit structure. In this case, a sealing ring 8 needs to be installed at the connection between the cathode flange 1 and the target material baffle 7 to seal it, preventing water from flowing out and affecting the vacuum state of the vacuum chamber.
[0018] During operation, the cathode flange 1 is first connected to the vacuum chamber, which is then connected to the vacuum coating chamber. A high negative voltage is used to initiate the ionization of the inert gas, causing it to collide with the target material 6. Each collision causes atoms from the target material 6 to be ejected into the vacuum environment and propelled onto the substrate surface. The magnetic shoe 2 confines the atoms to the vicinity of the target material 6. The target baffle 7 blocks the target material 6 sputtered from the surrounding area, reducing contamination of the vacuum coating chamber. The cooling plate 4 cools the bottom of the target material 6. The first water-cooling channel 12 provides comprehensive water cooling for the surface of the target material 6, excluding the working surface. Compared with existing technologies, this device, through the first water-cooling channel 12, provides comprehensive water cooling for the surface of the target material 6, ensuring that the heat received by the coated material is only generated during sputtering deposition. This effectively reduces the thermal radiation during the sputtering process of the target material 6, achieving low-temperature coating and solving the problem of excessive thermal radiation in existing technologies.
[0019] Furthermore, the magnetic boot 2 is provided with a plurality of magnets 3, which are arranged in a horizontal array in the magnetic boot 2. The magnets 3 can generate a strong magnetic field, which can confine electrons to the vicinity of the target material 6, increase the deposition rate and prevent ion bombardment from damaging the material to be coated. The arrangement of the magnets 3 in the magnetic boot 2 and the setting of the magnetic poles are public technologies and will not be described in detail here.
[0020] Furthermore, the cooling plate 4 is provided with a plurality of second water-cooling channels 11, and the material of the cooling plate 4 is copper. The bottom end of the target material 6 can be cooled through the provided second water-cooling channels 11. By making the material of the cooling plate 4 copper, the cooling efficiency can be increased.
[0021] Furthermore, the limiting component includes a target material pressure strip 5 and a pressure groove 10. The target material pressure strip 5 is disposed on the cooling plate 4, and the pressure groove 10 is disposed on one side of the corresponding target material pressure strip 5. The outer periphery of the target material 6 is convex, and the convex part of the target material 6 is adapted to the pressure groove 10. The target material pressure strip 5 is fixedly installed above the cooling plate 4. Through the set target material pressure strip 5 and pressure groove 10, the target material 6 can be placed in the pressure groove 10, and the target material pressure strip 5 is used to limit the movement and prevent the target material 6 from displacing.
[0022] Furthermore, a first sealing ring 8 is provided on one side of the cathode flange 1, and a second sealing ring 9 is provided between the cathode flange 1 and the target baffle 7. Through the first sealing ring 8 and the second sealing ring 9, the cathode flange 1 can be connected to the vacuum chamber to perform vacuum sealing, preventing air from entering and affecting magnetron sputtering.
[0023] Furthermore, the first water-cooling channel 12 in the cathode flange 1 and the target baffle 7 is L-shaped after being connected. By connecting the target baffle 7 and the first water-cooling channel 12 in the cathode flange 1, the target material 6 sputtered from all sides can be magnetron sputtered, reducing the contamination of the vacuum coating chamber.
[0024] It should be noted that in this product, both the first water-cooling channel 12 and the second water-cooling channel 11 are connected to external pipes for water inlet and outlet to achieve the water-cooling process.
[0025] The above description is only a preferred embodiment of the present utility model, but the protection scope of the present utility model is not limited thereto. Any equivalent substitutions or changes made by those skilled in the art within the technical scope disclosed in the present utility model, based on the technical solution and the inventive concept of the present utility model, should be included within the protection scope of the present utility model.
Claims
1. A low-temperature magnetron sputtering planar cathode structure, comprising a cathode flange (1), a magnetic shoe (2) disposed on the inner side of the cathode flange (1), a cooling plate (4) disposed on the top of the magnetic shoe (2), a target material (6) mounted on the cooling plate (4) by a limiting component, and a target material baffle (7) disposed on the top of the cathode flange (1), characterized in that: The cathode flange (1) and the target baffle (7) are provided with a first water cooling channel (12), and the first water cooling channel (12) in the cathode flange (1) and the target baffle (7) are connected.
2. The low-temperature magnetron sputtering planar cathode structure according to claim 1, characterized in that: The magnetic boot (2) is provided with a plurality of magnets (3), which are arranged in a horizontal array in the magnetic boot (2).
3. The low-temperature magnetron sputtering planar cathode structure according to claim 1, characterized in that: The cooling plate (4) is provided with several second water cooling channels (11), and the material of the cooling plate (4) is copper.
4. The low-temperature magnetron sputtering planar cathode structure according to claim 1, characterized in that: The limiting component includes a target material pressure strip (5) and a pressure groove (10). The target material pressure strip (5) is disposed on the cooling plate (4), and the pressure groove (10) is disposed on one side of the corresponding target material pressure strip (5). The two sides of the target material (6) are convex, and the convex shape of the target material (6) is adapted to the pressure groove (10).
5. The low-temperature magnetron sputtering planar cathode structure according to claim 1, characterized in that: A first sealing ring (8) is provided on one side of the cathode flange (1), and a second sealing ring (9) is provided between the cathode flange (1) and the target baffle (7).
6. The low-temperature magnetron sputtering planar cathode structure according to claim 1, characterized in that: The first water-cooling channel (12) inside the cathode flange (1) and the target baffle (7) is L-shaped after being connected.