Intelligent semiconductor heat treatment equipment

Abstract

The utility model relates to the technical field of semiconductor manufacturing, and discloses intelligent semiconductor heat treatment equipment which comprises a reaction chamber, a multi-layer adjusting device is arranged in the reaction chamber, the adjusting device comprises a lifting ring arranged in the reaction chamber, the lifting ring is in sliding connection with the reaction chamber, and the lifting ring is connected with the reaction chamber. A plurality of side plates are mounted on the inner wall of the reaction chamber. According to the intelligent semiconductor heat treatment equipment, a rotating plate is driven to rotate through lifting of a lifting ring, a flow guide groove and an arc-shaped flow guide plate are made to rotate through rotation of the rotating plate, and gas used for reaction is exhausted from an annular gas inlet pipe and falls to the upper surfaces of a wafer boat and an arc-shaped bearing plate; part of the gas reacts with the wafer boats and the wafers on the upper surfaces of the arc-shaped bearing plates, and the remaining gas continues to fall through holes between the arc-shaped bearing plates and makes contact with the lower wafer boats and the arc-shaped bearing plates, so that the wafers on the upper surfaces of the wafer boats can make full contact with the wafers.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing technology, specifically to an intelligent semiconductor heat treatment device. Background Technology

[0002] With the rapid development of the semiconductor manufacturing industry, the feature size of devices is constantly shrinking, the integration of chips is becoming increasingly higher, and the requirements for process indicators are becoming increasingly stringent. In semiconductor manufacturing processes, diffusion furnaces are used for thin film preparation, alloying, and annealing, while atomic layer deposition can be performed using vertical furnace equipment. During the process, the temperature and the uniformity of process gas mixing both affect the uniformity of film thickness in the semiconductor fabrication process.

[0003] An existing patent (publication number: CN220304233U) discloses a semiconductor heat treatment apparatus. In its use, the inlet chamber includes multiple inlet chambers connected in sequence. Process gases must pass through multiple inlet chambers in sequence before entering the reaction chamber to react with the wafer on the crystal boat in the reaction chamber to perform semiconductor processing. Since at least one inlet chamber includes multiple inlet sub-chambers, and the multiple inlet sub-chambers are spaced apart in a direction parallel to the axial direction of the reaction chamber, they can diffuse to multiple inlet sub-chambers in a direction parallel to the axial direction of the reaction chamber. This improves the uniformity of the flow rate of process gases entering the reaction chamber from different positions in a direction parallel to the axial direction of the reaction chamber.

[0004] Although the aforementioned patent improves the uniformity of process gas flow from different positions in the reaction chamber parallel to the axial direction by setting up a multi-stage air intake chamber connected in sequence, thus improving the uniformity of process gas flow from wafers at different positions, it still has certain drawbacks in use. Specifically, when the gas entering through the multi-stage air intake chamber collides with the wafer boat, it can bypass the wafer boat and directly transfer to the exhaust port to be discharged. Therefore, some wafer boats may not react sufficiently or may not participate in the reaction, resulting in lower processing efficiency. Utility Model Content

[0005] To address the shortcomings of existing technologies, this invention provides an intelligent semiconductor heat treatment device that has the advantage that each crystal boat can fully react, thus solving the problems mentioned in the background section.

[0006] To achieve the above objectives, the present invention provides the following technical solution: an intelligent semiconductor heat treatment device, comprising a reaction chamber, wherein a multi-layer adjustment device is provided inside the reaction chamber, the adjustment device comprising a lifting ring disposed inside the reaction chamber, the lifting ring being slidably connected to the reaction chamber;

[0007] The inner wall of the reaction chamber is equipped with multiple side plates, and the inner side of the side plates is hinged with a guide groove. An arc-shaped guide plate is installed at the other end of the guide groove. A heating component is provided at the top of the reaction chamber. An annular air inlet pipe is provided at the top of the interior of the reaction chamber. An exhaust pipe is provided at the bottom of the side of the reaction chamber.

[0008] Furthermore, the interior of the reaction chamber is provided with multiple crystal boats, and three arc-shaped support plates are installed on the side of each crystal boat. The arc-shaped support plates installed on the side of two adjacent crystal boats are staggered with each other, and a wafer is provided on the upper surface of each crystal boat.

[0009] With the above scheme, the gas used for the reaction is discharged from the annular inlet pipe and falls onto the upper surface of the crystal boat and the arc-shaped support plate. Some of the gas reacts with the wafers on the upper surface of the crystal boat and the arc-shaped support plate, and the remaining gas continues to fall through the gaps between the arc-shaped support plates and comes into contact with the crystal boat and the arc-shaped support plate below, so that all the wafers on the upper surface of the crystal boat can come into contact with the wafers.

[0010] Furthermore, an arc-shaped flow guide ring is fixed to the outer end of the arc-shaped support plate, and the two ends of the arc-shaped flow guide ring are flush with the two ends of the arc-shaped support plate.

[0011] The above scheme guides the gas flow to the wafer located at the center of the crystal boat through the flow-guiding ring of the arc-shaped guide ring, thereby assisting the gas to contact the wafer.

[0012] Furthermore, the upper surface of the arc-shaped support plate is fixed with multiple sets of annular protrusions, and the annular protrusions are evenly spaced together.

[0013] The above scheme involves placing the wafer on the upper surface of the annular protrusions. During the process of guiding the gas flow to the center of the crystal boat through the flow-guiding rings, the annular protrusions lift the wafer, allowing the gas to contact the bottom surface of the wafer. At the same time, the spacing between the annular protrusions allows the gas to flow directly to the center of the crystal boat.

[0014] Furthermore, the upper surface of the lifting ring is hinged with multiple rotating plates, and the other end of the rotating plates is hinged to the corresponding guide groove.

[0015] With the above scheme, the lifting ring can drive the rotating plate to rotate, and the rotation of the rotating plate can drive the guide channel to adjust its angle.

[0016] Furthermore, multiple adjusting rods are rotatably connected to the upper surface of the reaction chamber, and threaded rods are installed at the bottom ends of the adjusting rods. An auxiliary plate is fixed to the side of the lifting ring, and the lifting ring passes through the corresponding auxiliary plate and is threadedly connected to the auxiliary plate.

[0017] The above scheme allows the lifting ring to be adjusted in height by rotating the threaded rod.

[0018] Furthermore, a heating chamber is provided on the outside of the reaction chamber, and a base is provided below the crystal boat. The base is fixed to the arc-shaped support plate by a fixing rod, and the base can be raised and lowered for adjustment.

[0019] Using the above method, the multi-layered crystal boat can be removed by raising and lowering the base.

[0020] Compared with the prior art, the technical solution of this utility model has the following beneficial effects:

[0021] This intelligent semiconductor heat treatment equipment, during use, rotates a rotating plate by raising and lowering a lifting ring according to the size of the wafer. The rotation of the rotating plate causes the guide groove and the arc-shaped guide plate to rotate. The gas used for reaction is discharged from the annular gas inlet pipe and falls onto the upper surface of the crystal boat and the arc-shaped support plate. Some of the gas reacts with the wafer on the upper surface of the crystal boat and the arc-shaped support plate, while the remaining gas continues to fall through the gaps between the arc-shaped support plates and comes into contact with the crystal boat and the arc-shaped support plate below. This ensures that all the wafers on the upper surface of the crystal boat can have sufficient contact with the wafer. Attached Figure Description

[0022] Figure 1 This is a three-dimensional structural diagram of the present application;

[0023] Figure 2 This is a diagram showing the internal structure of the overall reaction chamber of this application;

[0024] Figure 3 For the purposes of this application as a whole Figure 2 Enlarged schematic diagram of the structure at point A;

[0025] Figure 4 This is a side view structural diagram of the overall crystal boat of this application;

[0026] Figure 5 This is a sectional view of the overall reaction chamber of this application, taken from a top view.

[0027] In the picture:

[0028] 1. Reaction chamber;

[0029] 2. Adjustment device; 201. Lifting ring; 202. Rotating plate; 203. Adjusting rod; 204. Threaded rod;

[0030] 3. Side plate; 4. Guide groove; 5. Arc-shaped guide plate; 6. Annular air intake pipe; 7. Exhaust pipe; 8. Crystal boat; 9. Arc-shaped support plate; 10. Arc-shaped guide ring; 11. Annular protrusion; 12. Heating chamber; 13. Base. Detailed Implementation

[0031] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0032] Please see Figure 1 , Figure 2 and Figure 3 An intelligent semiconductor heat treatment device in this embodiment includes a reaction chamber 1. The reaction chamber 1 is provided with a multi-layer adjustment device 2. The adjustment device 2 includes a lifting ring 201 disposed inside the reaction chamber 1. The lifting ring 201 is slidably connected to the reaction chamber 1.

[0033] Multiple side plates 3 are installed on the inner wall of the reaction chamber 1. A guide groove 4 is hinged to the inner side of the side plate 3. An arc-shaped guide plate 5 is installed at the other end of the guide groove 4. A heating component is provided at the top of the reaction chamber 1. An annular air inlet pipe 6 is provided at the top of the interior of the reaction chamber 1. An exhaust pipe 7 is provided at the bottom of the side of the reaction chamber 1.

[0034] Please see Figure 2 , Figure 3 and Figure 4 The reaction chamber 1 contains multiple crystal boats 8. Three arc-shaped support plates 9 are installed on the sides of the crystal boats 8. The arc-shaped support plates 9 installed on the sides of two adjacent crystal boats 8 are staggered. A wafer is placed on the upper surface of the crystal boat 8. The gas used for the reaction is discharged from the annular gas inlet pipe 6 and falls onto the upper surface of the crystal boat 8 and the arc-shaped support plate 9. Some of the gas reacts with the wafer on the upper surface of the crystal boat 8 and the arc-shaped support plate 9. The remaining gas continues to fall through the gaps between the arc-shaped support plates 9 and comes into contact with the crystal boat 8 and the arc-shaped support plate 9 below, so that the wafer on the upper surface of the crystal boat 8 can all come into contact with the wafer.

[0035] Please see Figure 2 , Figure 3 and Figure 5 An arc-shaped flow guide ring 10 is fixed to the outer end of the arc-shaped support plate 9. The two ends of the arc-shaped flow guide ring 10 are flush with the two ends of the arc-shaped support plate 9. The flow guide ring 10 guides the gas flow to the wafer located at the center of the crystal boat 8, thereby assisting the gas to contact the wafer. Multiple sets of annular protrusions 11 are fixed on the upper surface of the arc-shaped support plate 9. The annular protrusions 11 are evenly spaced. When the wafer is placed on the upper surface of the annular protrusions 11, the gas is guided to the center of the crystal boat 8 by the flow guide ring 10. The annular protrusions 11 lift the wafer, allowing the gas to contact the bottom surface of the wafer. At the same time, the spacing between the annular protrusions 11 allows the gas to flow directly to the center of the crystal boat 8.

[0036] Please see Figure 2 , Figure 3 and Figure 4 Multiple rotating plates 202 are hinged to the upper surface of the lifting ring 201. The other end of the rotating plate 202 is hinged to the corresponding guide channel 4. The lifting ring 201 can drive the rotating plate 202 to rotate. The rotation of the rotating plate 202 can drive the guide channel 4 to adjust its angle. Multiple adjusting rods 203 are rotatably connected to the upper surface of the reaction chamber 1. A threaded rod 204 is installed at the bottom end of the adjusting rod 203. An auxiliary plate is fixed to the side of the lifting ring 201. The lifting ring 201 passes through the corresponding auxiliary plate and is threadedly connected to the auxiliary plate. The rotation of the threaded rod 204 can drive the lifting ring 201 to adjust its height. A heating chamber 12 is provided on the outside of the reaction chamber 1. A base 13 is provided below the crystal boat 8. The base 13 is fixed to the arc-shaped support plate 9 by a fixing rod. The base 13 can be adjusted in height. The multi-layer crystal boat 8 can be taken out by raising and lowering the base 13.

[0037] In this embodiment, an intelligent semiconductor heat treatment device is used. During operation, the lifting ring 201 drives the rotating plate 202 to rotate according to the size of the wafer. The rotation of the rotating plate 202 causes the guide groove 4 and the arc-shaped guide plate 5 to rotate. The gas used for reaction is discharged from the annular inlet pipe 6 and falls onto the upper surface of the crystal boat 8 and the arc-shaped support plate 9. Some of the gas reacts with the wafers on the upper surface of the crystal boat 8 and the arc-shaped support plate 9. The remaining gas continues to fall through the gaps between the arc-shaped support plates 9 and comes into contact with the crystal boat 8 and the arc-shaped support plate 9 below, so that the wafers on the upper surface of the crystal boat 8 can fully contact the wafers.

[0038] It should be noted that when the crystal boat 8 needs to be removed, the adjusting rod 203 should be rotated first, so that the threaded rod 204 rotates and drives the guide groove 4 and the arc-shaped guide plate 5 to rotate, so as to avoid the crystal boat 8 colliding with the guide groove 4 and the arc-shaped guide plate 5 during the removal process.

[0039] The working principle of the above embodiment is as follows: After the base 13 is installed, the adjusting rod 203 is rotated. The rotation of the adjusting rod 203 drives the threaded rod 204 to rotate. The rotation of the threaded rod 204 drives the lifting ring 201 to rise and fall. The rise and fall of the lifting ring 201 drives the rotating plate 202 to rotate. The rotation of the rotating plate 202 causes the guide groove 4 and the arc-shaped guide plate 5 to rotate. The gas used for reaction is discharged from the annular inlet pipe 6 and falls onto the upper surface of the crystal boat 8 and the arc-shaped support plate 9. Some of the gas reacts with the crystal boat 8 and the arc-shaped support plate. The wafer on the upper surface of 9 reacts, and the remaining gas continues to fall through the gaps between the arc-shaped support plates 9 and comes into contact with the crystal boat 8 and the arc-shaped support plate 9 below. The wafer is placed on the upper surface of the annular protrusion 11. During the process of guiding the gas flow to the center of the crystal boat 8 through the flow-guiding ring 10, the annular protrusion 11 lifts the wafer, so that the gas can come into contact with the bottom surface of the wafer. At the same time, the spacing between the annular protrusions 11 allows the gas to flow directly to the center of the crystal boat 8, so that the wafers on the upper surface of the crystal boat 8 can all come into full contact with the wafer.

[0040] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0041] Although embodiments of this application have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of this application, the scope of which is defined by the appended claims and their equivalents.

Claims

1. An intelligent semiconductor heat treatment device, comprising a reaction chamber (1), characterized in that: The reaction chamber (1) is provided with a multi-layer adjustment device (2), the adjustment device (2) includes a lifting ring (201) disposed inside the reaction chamber (1), the lifting ring (201) is slidably connected to the reaction chamber (1); The inner wall of the reaction chamber (1) is equipped with multiple side plates (3), and the inner side of the side plate (3) is hinged with a guide groove (4). An arc-shaped guide plate (5) is installed at the other end of the guide groove (4). A heating component is provided at the top of the reaction chamber (1). An annular air inlet pipe (6) is provided at the top of the interior of the reaction chamber (1). An exhaust pipe (7) is provided at the bottom of the side of the reaction chamber (1).

2. The intelligent semiconductor heat treatment equipment according to claim 1, characterized in that: The reaction chamber (1) is equipped with multiple crystal boats (8). Three arc-shaped support plates (9) are installed on the side of each crystal boat (8). The arc-shaped support plates (9) installed on the side of two adjacent crystal boats (8) are staggered. A wafer is provided on the upper surface of each crystal boat (8).

3. The intelligent semiconductor heat treatment equipment according to claim 2, characterized in that: An arc-shaped flow guide ring (10) is fixed to the outer end of the arc-shaped support plate (9), and the two ends of the arc-shaped flow guide ring (10) are flush with the two ends of the arc-shaped support plate (9).

4. The intelligent semiconductor heat treatment equipment according to claim 3, characterized in that: The upper surface of the arc-shaped support plate (9) is fixed with multiple sets of annular protrusions (11), and the annular protrusions (11) are arranged at equal intervals.

5. The intelligent semiconductor heat treatment equipment according to claim 1, characterized in that: The upper surface of the lifting ring (201) is hinged with a plurality of rotating plates (202), and the other end of the rotating plate (202) is hinged to the corresponding guide groove (4).

6. The intelligent semiconductor heat treatment equipment according to claim 1, characterized in that: The upper surface of the reaction chamber (1) is rotatably connected with multiple adjusting rods (203), and the bottom end of the adjusting rod (203) is equipped with a threaded rod (204). An auxiliary plate is fixed on the side of the lifting ring (201), and the lifting ring (201) passes through the corresponding auxiliary plate and is threadedly connected to the auxiliary plate.

7. The intelligent semiconductor heat treatment equipment according to claim 3, characterized in that: A heating chamber (12) is provided on the outside of the reaction chamber (1), and a base (13) is provided below the crystal boat (8). The base (13) is fixed to the arc-shaped support plate (9) by a fixing rod, and the base (13) can be raised and lowered.

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