Dustproof cover and semiconductor equipment
By designing the dust cover structure and groove array, the problems of water vapor precipitation and particulate matter accumulation in the chamber were solved, gas disturbance was achieved, particulate contaminants were prevented from depositing on the inner wall of the chamber, and the quality of the wafer was ensured.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- SEMICON TECH INNOVATION CENT(BEIJING) CORP
- Filing Date
- 2025-04-07
- Publication Date
- 2026-04-17
AI Technical Summary
During the chemical mechanical planarization process, water vapor precipitation and crystallization and particulate matter accumulation in the chamber can cause wafer scratches. Existing technologies cannot effectively prevent particulate contaminants from accumulating near the ventilation openings of the process chamber.
Design a dust cover, the cover body includes a first region and a second region, the first region protrudes in the direction away from the vent, the second region protrudes in the direction of the vent, the cover body and the inner wall of the cavity form a gap that narrows and then widens again, and a groove array is set in the cover body and the inner wall of the cavity to enhance gas disturbance and avoid particulate matter adhesion.
It effectively avoids the precipitation of dissolved substances in water vapor and the adhesion of particulate matter in the gas to the inner wall of the chamber, reduces the deposition of particulate contaminants, and prevents wafer scratch defects.
Smart Images
Figure CN224128192U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a dust cover and semiconductor equipment. Background Technology
[0002] Chemical mechanical planarization (CMP) processes require the use of large amounts of liquids. For example, slurry is used to polish the wafer, cleaning fluid is used to clean the wafer surface, and deionized water is used to rinse the wafer, polishing pad, and polishing head. Furthermore, to maintain the machine's health, the chamber needs to be periodically and quantitatively flushed and kept moist during idle periods. Therefore, the CMP machine chamber is inevitably in a humid state.
[0003] However, when the water vapor in the chamber is discharged through the vent located on the top wall of the chamber, the dissolved substances in the water vapor may crystallize. In addition, the particulate matter mixed in the water vapor may also remain at the edge of the vent. Therefore, a large number of particulate contaminants will accumulate on the top wall of the chamber near the vent. These particulate contaminants will fall onto the polishing pad and cause wafer scratch defects.
[0004] Therefore, it is necessary to develop a dust cover and semiconductor equipment to prevent particulate contaminants from accumulating near the ventilation openings of the process chamber. Utility Model Content
[0005] The purpose of this application is to provide a dust cover and semiconductor equipment to prevent particulate contaminants from accumulating near the ventilation openings of the process chamber.
[0006] In a first aspect, embodiments of this application provide a dust cover for covering the ventilation opening of a semiconductor equipment process chamber, comprising: a cover body, including a first region and a second region disposed around the first region, the first region protruding in a first direction, the second region protruding in a second direction, the first direction and the second direction being opposite to each other.
[0007] In some embodiments, the first direction is the direction away from the vent, and the distance between the first region and the inner wall of the process chamber gradually increases from the edge of the first region to the center of the first region.
[0008] In some embodiments, the distance between the second region and the inner wall of the process chamber gradually decreases and then gradually increases from the edge of the cover to the edge of the first region.
[0009] In some embodiments, the ratio of the distance between the lowest point of the concave surface of the first region and the highest point of the convex surface of the second region to the height difference between the lowest point of the concave surface of the first region and the highest point of the convex surface of the second region is (2-3):1.
[0010] In some embodiments, the ratio of the distance between the highest point of the convex surface of the second region and the edge of the cover to the height difference between the highest point of the convex surface of the second region and the edge of the cover is (3-4):1.
[0011] In some embodiments, the convex surface of the second region is provided with a plurality of first groove arrays, and the plurality of first groove arrays are centrally symmetrically distributed about the center of the cover.
[0012] In some embodiments, any of the first groove arrays includes a plurality of first grooves and a plurality of second grooves, wherein the positions of the first grooves are symmetrically distributed with respect to the positions of the second grooves, and the shapes of the first grooves are centrally symmetrical with respect to the shapes of the second grooves.
[0013] In some embodiments, the shapes of the first groove and the second groove are asymmetrical V-shapes.
[0014] In some embodiments, the dust cover further includes a connecting portion, a first end of which is connected to a concave surface of the first region, and a second end of which is configured to pass through the vent and connect to a fixture of the semiconductor device.
[0015] Secondly, embodiments of this application also provide a semiconductor device, including: a process chamber, including a cavity, the top wall of which is provided with a vent for discharging gas inside the cavity; and a dust cover as described in the first aspect of this application, wherein the dust cover is located inside the cavity, the first direction is the direction in which the dust cover is away from the vent, and the second direction is the direction in which the dust cover is toward the vent.
[0016] In some embodiments, the inner wall of the cavity surrounding the vent is recessed in a direction away from the cover.
[0017] In some embodiments, a plurality of second groove arrays are provided on the inner wall of the cavity surrounding the vent, and the plurality of second groove arrays are mirror-symmetrical to the plurality of first groove arrays.
[0018] The beneficial effects of the dust cover and semiconductor equipment provided in this application include, but are not limited to, the following:
[0019] The dust cover provided in this application is used to cover the ventilation opening of the process chamber. Gas in the process chamber flows into the ventilation opening from the gap between the dust cover and the inner wall of the process chamber, and is discharged from the process chamber through the ventilation opening.
[0020] On the one hand, the dust cover can prevent pollutants in the vent from entering the process chamber; on the other hand, the dust cover has a first region and a second region surrounding the first region. The first region protrudes in a first direction, and the second region protrudes in a second direction, with the first direction and the second direction facing opposite directions. In use, the concave surface of the first region and the convex surface of the second region face the vent, causing the gap between the dust cover and the inner wall of the process chamber to gradually narrow and then widen, increasing gas turbulence, preventing the precipitation of dissolved substances in water vapor, and preventing the adhesion of particulate matter carried in the gas to the inner wall of the process chamber, thereby preventing the deposition of particulate pollutants on the inner wall around the vent of the process chamber.
[0021] The inner wall of the semiconductor device provided in this application is recessed away from the first region of the cover. The gap between the inner wall of the cavity and the dust cover gradually narrows and then widens, increasing gas turbulence, preventing the precipitation of dissolved substances in water vapor, and also preventing the adhesion of particulate matter carried in the gas to the inner wall of the cavity.
[0022] The inner wall of the cavity corresponding to the second region of the cover is provided with a plurality of second groove arrays. When the gas passes through the grooves of the second groove array, it will cause disturbance. Under the action of disturbance and gravity, the particles in the gas will move away from the grooves of the second groove array, thereby avoiding the deposition of particles on the inner wall of the cavity. Attached Figure Description
[0023] The following accompanying drawings describe in detail the exemplary embodiments disclosed in this application. The same reference numerals denote similar structures in several views of the drawings. Those skilled in the art will understand that these embodiments are non-limiting and exemplary, and the drawings are for illustrative purposes only and are not intended to limit the scope of this application. Other embodiments may similarly fulfill the inventive intent of this application. It should be understood that the drawings are not drawn to scale.
[0024] in:
[0025] Figure 1 This is a cross-sectional view of a dust cover according to some embodiments of this application;
[0026] Figure 2 This is a top view of a dust cover according to some embodiments of this application;
[0027] Figure 3 This is a schematic diagram showing the distribution of gas velocity when gas flows through a gap of constant width.
[0028] Figure 4 as well as Figure 5 This is a schematic diagram showing the distribution of gas velocity when gas flows through a gap whose width gradually narrows and then widens again.
[0029] Figure 6 This is a schematic diagram of the structure of the process chamber of a semiconductor device according to an embodiment of this application;
[0030] Figure 7 for Figure 6 An enlarged view of box A shown;
[0031] Figure 8 A bottom view of the area corresponding to the inner wall of the cavity and the dust cover according to an embodiment of this application; and
[0032] Figure 9 This is a schematic diagram showing the airflow direction when gas flows through the second groove array. Detailed Implementation
[0033] The following description provides specific application scenarios and requirements for this application, intended to enable those skilled in the art to make and use the content of this application. Various partial modifications to the disclosed embodiments will be apparent to those skilled in the art, and the general principles defined herein can be applied to other embodiments and applications without departing from the spirit and scope of this application. Therefore, this application is not limited to the embodiments shown, but rather to the widest scope consistent with the claims.
[0034] This application provides a dust cover for covering the ventilation opening of a semiconductor equipment process chamber, comprising: a cover body, including a first region and a second region disposed around the first region, the first region protruding in a first direction, the second region protruding in a second direction, the first direction and the second direction being opposite to each other.
[0035] The dust cover provided in this application is used to cover the ventilation opening of the process chamber of a semiconductor device. Gas inside the process chamber (containing water vapor and particulate matter) flows into the ventilation opening through the gap between the dust cover and the inner wall of the process chamber, and exits from the ventilation opening into the process chamber. On one hand, the dust cover can prevent contaminants in the ventilation opening from entering the process chamber. On the other hand, the dust cover has a first region and a second region surrounding the first region. The first region protrudes in a first direction, and the second region protrudes in a second direction, with the first and second directions facing opposite directions. In use, the concave surface of the first region and the convex surface of the second region face the ventilation opening, causing the gap between the dust cover and the inner wall of the process chamber to gradually narrow and then widen again. This increases gas turbulence, preventing the precipitation of dissolved substances in the water vapor and the adhesion of particulate matter carried in the gas to the inner wall of the process chamber, thereby preventing the deposition of particulate contaminants on the inner wall around the ventilation opening of the process chamber.
[0036] The dust cover provided in this application will be described in detail below with reference to specific embodiments and accompanying drawings.
[0037] refer to Figure 1 and Figure 2 This application provides a dust cover for covering the ventilation opening of a semiconductor equipment process chamber. The dust cover includes a cover body 100, which includes a first region I and a second region II surrounding the first region I. The first region I protrudes in a first direction, and the second region II protrudes in a second direction. The first direction and the second direction are opposite to each other.
[0038] In some embodiments, the semiconductor device is an apparatus for performing a chemical mechanical planarization process. In other embodiments, the semiconductor device may also be other semiconductor process apparatus with ventilation requirements.
[0039] In some embodiments, the semiconductor device includes a process chamber, the process chamber including a cavity 200 and a vent 210 disposed on the top wall of the cavity 200. In use, the dust cover is placed inside the cavity 200 up to the vent 210, and gas inside the cavity 200 flows into the vent 210 through the gap between the dust cover and the inner wall of the cavity 200, preventing contaminants inside the vent 210 from entering the process chamber.
[0040] Furthermore, when the dust cover provided in this application is in use, the first direction is away from the vent 210, and the second direction is towards the vent 210. That is, the concave surface of the first region I and the convex surface of the second region II face the vent 210. This causes the gap between the dust cover and the inner wall of the process chamber to gradually narrow and then widen, increasing gas turbulence, preventing the precipitation of dissolved substances in water vapor, and simultaneously preventing the adhesion of particulate matter carried in the gas to the inner wall of the process chamber.
[0041] The principle by which the dust cover can prevent the precipitation of dissolved substances in water vapor and the adhesion of particulate matter carried in the gas to the inner wall of the process chamber is as follows:
[0042] refer to Figure 3 Gas passes through the gap between the first plate 11a and the second plate 12a, wherein the gap between the first plate 11a and the second plate 12a maintains a constant width. The direction represented by the arrow in the figure represents the direction of gas flow; the length of the arrow represents the magnitude of the gas flow velocity. When the gas passes through the gap with a constant width, the velocity of the gas on the surface of the first plate 11 and the second plate 12 approaches 0 due to the influence of avoiding resistance. This promotes the precipitation of dissolved substances in water vapor and the adhesion of particulate matter in the gas to the surface of the first plate 11 or the second plate 12.
[0043] refer to Figure 4 Alternatively, gas passes through the gap between the first plate 11b (11c) and the second plate 12b (12c). When the gap between the first plate 11b (11c) and the second plate 12b (12c) changes from wide to narrow and then wide again along the gas flow direction, the gas is accelerated in the narrow gap area. At the same time, the gas disturbance increases, affecting the conditions for the precipitation and crystallization of dissolved substances in water vapor. This reduces the probability of dissolved substances in water vapor crystallizing on the surface of the first plate 11b (11c) and the second plate 12b (12c). In addition, the gas particles are also prevented from staying on the surface of the first plate 11b (11c) and the second plate 12b (12c) due to the increased gas flow rate and gas disturbance.
[0044] The cover 100 forms a gap with the process chamber through the concave surface of the first region I and the convex surface of the second region II, which narrows and then widens along the gas flow direction, thereby preventing the precipitation of dissolved substances in water vapor and the adhesion of particulate matter carried in the gas to the inner wall of the process chamber.
[0045] In some embodiments, the distance between the first region I and the inner wall of the process chamber gradually increases from the edge of the first region I to the center of the first region I.
[0046] In some embodiments, the ratio of the distance between the lowest point of the concave surface of the first region I and the highest point of the convex surface of the second region II to the height difference between the lowest point of the concave surface of the first region I and the highest point of the convex surface of the second region II is (2-3):1.
[0047] In some embodiments, the distance between the second region II and the inner wall of the process chamber gradually decreases and then gradually increases from the edge of the cover 100 to the edge of the first region I.
[0048] In some embodiments, the ratio of the distance between the highest point of the convex surface of the second region II and the edge of the cover 100 to the height difference between the highest point of the convex surface of the second region II and the edge of the cover 100 is (3-4):1.
[0049] In some embodiments, reference Figure 2 The convex surface of the second region II is provided with a plurality of first groove arrays 110, and the plurality of first groove arrays 110 are centrally symmetrically distributed about the center of the cover 100.
[0050] By setting the first groove array 110, the disturbance of gas passing through the gap between the cover 100 and the inner wall of the process chamber can be further enhanced, avoiding the deposition and adhesion of particles on the inner wall of the cover 100 or the inner wall of the process chamber.
[0051] In some embodiments, reference Figure 2 Each of the first groove arrays 110 includes a plurality of first grooves 111 and a plurality of second grooves 112, wherein the positions of the first grooves 111 and the positions of the second grooves 112 are symmetrically distributed, and the shapes of the first grooves 111 and the shapes of the second grooves 112 are centrally symmetrical.
[0052] As the gas flows toward the center of the cover 100, it first passes through the first groove 111 and then through the second groove. Since the shape of the first groove 111 is centrally symmetrical with the shape of the second groove 112, the turbulence direction of the gas in the first groove 111 is opposite to that in the second groove 112, which enhances the overall turbulence of the gas and further avoids the precipitation of dissolved substances in water vapor and the adhesion of particulate matter in the gas to the cover 100 and the inner wall of the process chamber.
[0053] In some embodiments, reference Figure 2 The first groove 111 and the second groove 112 are asymmetrical V-shaped. Setting the shapes of the first groove 111 and the second groove 112 to asymmetrical V-shapes can further increase the turbulence of the gas in the first groove 111 and the second groove 112.
[0054] In some embodiments, when the shape of the first groove 111 and the shape of the second groove 112 are asymmetrical V-shapes, the length of the long side and the length of the short side of the first groove 111 and the second groove 112 are (2.5~3.2):1, for example, 2.5:1, 3:1 or 3.2:1. In some embodiments, the length of the long side of the first groove 111 and the second groove 112 is 1.2cm~1.8cm, for example, 1.2cm, 1.5cm or 1.8cm; the length of the short side of the first groove 111 and the second groove 112 is 0.4cm~0.6cm, for example, 0.4cm, 1.5cm or 1.8cm.
[0055] In some embodiments, the depth of the first groove 111 and the second groove 112 is 0.2cm to 0.4cm, for example 0.2cm, 0.3cm or 0.4cm.
[0056] In other embodiments, the shape of the first groove 111 and the shape of the second groove 112 may also be a symmetrical V-shape.
[0057] In some embodiments, reference Figure 1 and Figure 2 The dust cover also includes a connecting portion 120, the first end of which is connected to the concave surface of the first region I, and the second end of which is configured to be connected to other components of the semiconductor device. For example, the second end of the connecting portion 120 passes through the ventilation port 210 of the semiconductor device process chamber and is connected to a fixture outside the process chamber.
[0058] In some embodiments, the connecting portion 120 is integrally connected to the cover 100.
[0059] In some embodiments, the connecting portion 120 is cylindrical.
[0060] This application also provides a semiconductor device. (See reference...) Figure 6 The semiconductor device includes a process chamber, which includes a cavity 200. A vent 210 is provided on the top wall of the cavity 200 for exhausting gases from inside the cavity 200. The semiconductor device also includes a dust cover provided in this application. The dust cover is located inside the cavity 200 and configured to cover the vent 210. The first direction is the direction in which the dust cover is away from the vent 210, and the second direction is the direction in which the dust cover is towards the vent 210.
[0061] In some embodiments, reference Figure 7The inner wall of the cavity 200 surrounding the vent 210 is recessed away from the cover 100. That is, the inner wall of the cavity 200 corresponding to the first region I of the cover 100 is recessed away from the cover 100. The gap between the inner wall of the cavity 200 and the dust cover gradually narrows and then widens, increasing gas turbulence and preventing the precipitation of dissolved substances in water vapor. It also prevents the adhesion of particulate matter carried in the gas to the inner wall of the cavity. For details, please refer to the previous... Figure 5 Explanation.
[0062] In some embodiments, reference Figure 8 A plurality of second groove arrays 220 are provided around the inner wall of the cavity 200 surrounding the vent 210, that is, the inner wall of the cavity 200 corresponding to the second region II of the cover 100. The plurality of second groove arrays 220 are mirror symmetrical to the plurality of first groove arrays 110.
[0063] refer to Figure 9 As shown in the figure, the arrows indicate the direction of gas flow. When the gas passes through the grooves of the second groove array 220, it will cause a disturbance. Under the influence of the disturbance and gravity, the particles 20 in the gas will move away from the grooves of the second groove array 220, thereby avoiding the deposition of particles 20 on the inner wall of the cavity.
[0064] The beneficial effects of the dust cover and semiconductor equipment provided in this application include, but are not limited to, the following:
[0065] The dust cover provided in this application is used to cover the ventilation opening of a semiconductor process chamber. Gas inside the process chamber flows into the ventilation opening from the gap between the dust cover and the inner wall of the process chamber, and is discharged from the process chamber through the ventilation opening.
[0066] On the one hand, the dust cover can prevent pollutants in the vent from entering the process chamber; on the other hand, the dust cover has a first region and a second region surrounding the first region. The first region protrudes in a first direction, and the second region protrudes in a second direction, with the first direction and the second direction facing opposite directions. In use, the concave surface of the first region and the convex surface of the second region face the vent, causing the gap between the dust cover and the inner wall of the process chamber to gradually narrow and then widen, increasing gas turbulence, preventing the precipitation of dissolved substances in water vapor, and preventing the adhesion of particulate matter carried in the gas to the inner wall of the process chamber, thereby preventing the deposition of particulate pollutants on the inner wall around the vent of the process chamber.
[0067] The inner wall of the process chamber of the semiconductor device provided in this application is recessed away from the first region of the cover. The gap between the inner wall of the chamber and the dust cover gradually narrows and then widens, increasing gas turbulence, preventing the precipitation of dissolved substances in water vapor, and also preventing the adhesion of particulate matter carried in the gas to the inner wall of the chamber.
[0068] The inner wall of the cavity corresponding to the second region of the cover is provided with a plurality of second groove arrays. When the gas passes through the grooves of the second groove array, it will cause disturbance. Under the action of disturbance and gravity, the particles in the gas will move away from the grooves of the second groove array, thereby avoiding the deposition of particles on the inner wall of the cavity.
[0069] It should be noted that different embodiments may produce different beneficial effects. In different embodiments, the beneficial effects may be any one or a combination of the above, or any other possible beneficial effects.
[0070] The basic concepts have been described above. Obviously, for those skilled in the art, the detailed disclosure above is merely illustrative and does not constitute a limitation of this specification. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements, and corrections to this application. Such modifications, improvements, and corrections are suggested in this specification, and therefore remain within the spirit and scope of the exemplary embodiments of this application.
[0071] It should be noted that, in the description of this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; a mechanical connection or an electrical connection; a rotating connection or a sliding connection; a direct connection or an indirect connection through an intermediate medium; or the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application in light of the specific circumstances.
[0072] Furthermore, when the terms "first," "second," "third," etc., are used in this application specification to describe various features, these terms are only used to distinguish these features and should not be construed as indicating or implying the correlation or relative importance between features or implicitly indicating the number of features indicated.
[0073] In addition, this application specification describes exemplary embodiments by referring to idealized exemplary cross-sectional views and / or plan views and / or perspective views. Therefore, differences from the illustrated shapes are foreseeable due to factors such as manufacturing techniques and / or tolerances. Therefore, exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but should include deviations in shape caused, for example, by manufacturing processes. Thus, the regions shown in the figures are substantially schematic, and their shapes are not intended to illustrate the actual shapes of the regions of the device, nor to limit the scope of the exemplary embodiments.
[0074] Furthermore, this application uses specific terms to describe embodiments of this specification. For example, "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic related to at least one embodiment of this application. Therefore, it should be emphasized and noted that "an embodiment," "one embodiment," or "an alternative embodiment" mentioned twice or more in different locations in this application do not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of this application can be appropriately combined.
[0075] Similarly, it should be noted that, in order to simplify the description of the present application and thus aid in the understanding of one or more embodiments of the invention, the foregoing description of the embodiments of the present application sometimes combines multiple features into a single embodiment, drawing, or description thereof. However, this disclosure method does not imply that the subject matter of the application requires more features than those mentioned in the claims. In fact, the embodiments contain fewer features than all the features of the single embodiments disclosed above.
[0076] Finally, it should be understood that the embodiments described in this application are merely illustrative of the principles of the embodiments of this application. Other modifications may also fall within the scope of this application. Therefore, alternative configurations of the embodiments of this application are considered as examples and not limitations, and are regarded as consistent with the teachings of this application. Accordingly, the embodiments of this application are not limited to the embodiments explicitly described and illustrated in this application.
Claims
1. A dust cover for covering the ventilation openings of a semiconductor equipment process chamber, characterized in that, include: The cover includes a first region and a second region surrounding the first region, the first region protruding in a first direction and the second region protruding in a second direction, the first direction and the second direction being opposite.
2. The dust cover of claim 1, wherein The first direction is the direction away from the vent, and the distance between the first region and the inner wall of the process chamber gradually increases from the edge of the first region to the center of the first region.
3. The dust cover of claim 2, wherein, The distance between the second region and the inner wall of the process chamber gradually decreases and then gradually increases from the edge of the cover to the edge of the first region.
4. The dust cover of claim 3, wherein The ratio of the distance between the lowest point of the concave surface of the first region and the highest point of the convex surface of the second region to the height difference between the lowest point of the concave surface of the first region and the highest point of the convex surface of the second region is (2-3):
1.
5. The dust cover of claim 3, wherein The ratio of the distance between the highest point of the convex surface of the second region and the edge of the cover to the height difference between the highest point of the convex surface of the second region and the edge of the cover is (3-4):
1.
6. The dust cap of claim 1, wherein, The convex surface of the second region is provided with a plurality of first groove arrays, and the plurality of first groove arrays are centrally symmetrically distributed about the center of the cover.
7. The dust cap of claim 6, wherein, Each of the first groove arrays includes a plurality of first grooves and a plurality of second grooves, wherein the positions of the first grooves are symmetrically distributed with respect to the positions of the second grooves, and the shapes of the first grooves are centrally symmetrical with respect to the shapes of the second grooves.
8. The dust cap of claim 7, wherein, The first groove and the second groove are asymmetrical V-shaped.
9. The dust cap of claim 1, wherein, It also includes a connecting portion, the first end of which is connected to the concave surface of the first region, and the second end of which is configured to pass through the vent and connect to the fixing component of the semiconductor device.
10. A semiconductor device, characterized by comprising: include: A process chamber includes a cavity, the top wall of which is provided with a vent for exhausting gas inside the cavity; as well as The dust cover as described in any one of claims 1 to 9, wherein the dust cover is located within the cavity, the first direction is the direction in which the dust cover is away from the vent, and the second direction is the direction in which the dust cover is toward the vent.
11. The semiconductor device according to claim 10, wherein The inner wall of the cavity surrounding the vent is recessed away from the cover.
12. The semiconductor device of claim 11, wherein The inner wall of the cavity surrounding the vent is provided with a plurality of second groove arrays, and the plurality of second groove arrays are mirror-symmetrical with the plurality of first groove arrays.