Device for fixing and handling wafer
By employing a nested connection structure of the stopper and ring-shaped embracing device and a flexible material layer design, the problem of fixation instability in high-precision processing of SiC wafers was solved, achieving efficient and stable wafer operation and improving the efficiency and accuracy of processing and inspection.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- ANHUI WEIXIN CHANGJIANG SEMICON MATERIAL CO LTD
- Filing Date
- 2025-05-23
- Publication Date
- 2026-04-17
AI Technical Summary
Existing technologies struggle to achieve high-quality growth and processing of large-size SiC wafers, especially in high-precision surface treatment and thin film deposition processes, leading to inconsistent device performance and low production efficiency, making it difficult to meet the demands of high-end applications.
A device for fixing and manipulating wafers has been designed, employing a nested connection structure of a clasp and a ring-shaped embracing device, combined with an elastic material layer and anti-slip texture, to ensure that the wafer does not shift during processing or inspection and to improve the efficiency of installation and removal.
It improves the stability and operational efficiency of wafer fixation, reduces mechanical stress, extends the service life of wafers, is suitable for environments with frequent changes, and enhances the accuracy and efficiency of processing and testing.
Smart Images

Figure CN224139427U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor manufacturing technology, specifically to a wafer fixing and manipulating device. Background Technology
[0002] With the rapid development of semiconductor materials technology, silicon carbide (SiC), as an important wide-bandgap semiconductor material, has shown significant advantages in high-temperature, high-frequency, and high-power electronic devices. Its excellent thermal conductivity (120-270 W / mK), high breakdown electric field strength (approximately 3.26 eV), and good chemical stability make it promising for applications in power electronics, optoelectronic devices, and 5G communications. However, despite the superior performance of SiC materials, numerous technical challenges remain in its preparation and processing, limiting its large-scale industrial application.
[0003] Currently, the preparation of SiC materials mainly relies on methods such as high-temperature chemical vapor deposition (HT-CVD) and high-temperature sublimation growth (HTSG). However, these technologies still face significant bottlenecks in terms of wafer size expansion, defect control, and production costs. For example, the current mainstream SiC wafer sizes are mostly 150 mm and 200 mm. Further increasing the size while maintaining high-quality crystal growth still requires overcoming problems such as thermal stress and lattice defects. In addition, the processing technology of SiC materials is complex, especially in high-precision surface treatment and thin film deposition. Existing technologies are difficult to meet the efficiency and consistency requirements of large-scale production.
[0004] In practical applications, the performance of SiC devices is also constrained by factors such as the density of internal defects, surface roughness, and interface quality. For example, in the fabrication of high electron mobility transistors (HEMTs) or Schottky diodes, surface state density and interface state defects significantly affect the switching characteristics and reliability of the devices. Furthermore, existing technologies lack the precise control over doping concentration and distribution during thin-film deposition, leading to significant performance fluctuations and making it difficult to meet the demands of high-end applications.
[0005] To further enhance the overall performance of SiC materials and promote their industrialization, a novel fabrication and processing technology is urgently needed. This technology should enable efficient and low-cost fabrication of large-size SiC wafers while ensuring material quality, and optimize surface treatment and thin-film deposition processes to reduce defect density and improve device performance consistency. This innovative direction will lay a solid foundation for the widespread application of SiC materials in next-generation electronic devices. Utility Model Content
[0006] The purpose of this invention is to provide a device for fixing and manipulating wafers, so as to solve the problems mentioned in the background art.
[0007] To achieve the above objectives, the present invention provides the following technical solution: a device for fixing and manipulating a wafer, comprising a retainer, a ring-shaped embracing device, and a wafer, wherein the retainer is located at the top of the device and has a plurality of parallel groove structures on its surface; the ring-shaped embracing device is an overall ring structure with an annular embracing groove on its inner side for placing and fixing the wafer.
[0008] Preferably, the cartridge has symmetrical protrusions on both sides, the protrusions being hemispherical or cylindrical in shape, with a diameter ranging from 1 mm to 3 mm and a height ranging from 0.5 mm to 2 mm.
[0009] Preferably, the annular embracing device has symmetrically arranged concave points on both sides. The concave points are hemispherical or cylindrical in shape, with a diameter ranging from 1 mm to 3 mm and a depth ranging from 0.5 mm to 2 mm, for forming a nested connection with the protrusions on the plug.
[0010] Preferably, the depth of the annular embracing groove ranges from 0.1 mm to 0.5 mm, and the width ranges from 1.1 times to 1.5 times the wafer thickness.
[0011] Preferably, the inner wall surface of the annular embracing groove is provided with an elastic material layer, the thickness of which ranges from 0.05 mm to 0.2 mm, and the hardness ranges from Shore A 30 to A 50.
[0012] Preferably, the ring-shaped embracing device has two handles symmetrically arranged at both ends, with the length of the handles ranging from 50 mm to 100 mm, the width ranging from 10 mm to 20 mm, and the thickness ranging from 2 mm to 5 mm.
[0013] Preferably, the surface of the double handle is provided with anti-slip texture, the depth of which ranges from 0.1 mm to 0.5 mm, the width from 1 mm to 3 mm, and the spacing from 2 mm to 5 mm.
[0014] Preferably, the gap between the protrusion on the cassette and the recess on the annular cradle device is in the range of 0.01 mm to 0.1 mm.
[0015] Preferably, the materials for the stopper and the ring-shaped embracing device are high-strength aluminum alloy or stainless steel, and their surfaces are anodized or nickel-plated.
[0016] Compared with the prior art, the beneficial effects of this utility model are as follows: This utility model forms a stable mechanical locking structure through the nested connection of the protrusions on the retainer and the concave points on the annular embracing device, preventing the wafer from shifting or loosening during processing or inspection; furthermore, the dual-handle design of the annular embracing device significantly improves the efficiency of wafer installation and removal, especially suitable for production environments that require frequent wafer replacement; in particular, the elastic material layer design of the annular embracing groove effectively reduces the mechanical stress on the wafer during placement, thereby improving the wafer's service life. Attached Figure Description
[0017] Figure 1 A schematic diagram of the overall design of the Cassette and the ring-shaped embracing device;
[0018] Figure 2 A detailed schematic diagram of the protrusions on the cartridge;
[0019] Figure 3 A schematic diagram showing the structural details of the ring-shaped embracing device;
[0020] Figure 4 A schematic diagram showing a wafer placed in a ring-shaped embracing groove;
[0021] Figure 5 This is a schematic diagram of the movement of a ring-shaped embracing device operated by two handles.
[0022] In the diagram: 1. Cassette; 2. Ring-shaped embracing device; 3. Chip; 4. Ring-shaped embracing groove; 5. Double handle; 6. Concave point; 7. Protruding point. Detailed Implementation
[0023] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.
[0024] This invention provides an apparatus for fixing and manipulating wafers, the specific embodiments of which are described in detail with reference to the accompanying drawings. Figure 1 To be continued Figure 5 The component numbers marked in the attached diagrams clearly illustrate the specific structure and operating principle of this device. The following section will provide a detailed description of the device's overall structure, the functional design of each component and their interrelationships, and the operational procedures in practical application scenarios.
[0025] This device consists of a retainer 1, a ring-shaped embracing device 2, and a wafer 3. The retainer 1 is located at the top of the device and its surface has multiple parallel grooves to enhance the stability of its fit with the ring-shaped embracing device 2. Symmetrically arranged protrusions 7 are provided on both sides of the retainer 1. The protrusions 7 are hemispherical or cylindrical in shape, with a diameter ranging from 1 mm to 3 mm and a height ranging from 0.5 mm to 2 mm. The ring-shaped embracing device 2 has an overall ring structure, with an annular embracing groove 4 on its inner side for placing and fixing the wafer 3. The depth of the annular embracing groove 4 ranges from 0.1 mm to 0.5 mm, and its width ranges from 1.1 to 1.5 times the thickness of the wafer 3. Symmetrically arranged concave points 6 are provided on both sides of the ring-shaped embracing device 2. The concave points 6 are hemispherical or cylindrical in shape, with a diameter ranging from 1 mm to 3 mm and a depth ranging from 0.5 mm to 2 mm. The ring-shaped embracing device 2 has two handles 5 symmetrically arranged at both ends. The length of the handles 5 ranges from 50 mm to 100 mm, the width ranges from 10 mm to 20 mm, and the thickness ranges from 2 mm to 5 mm.
[0026] In practical applications, the operation of this device is as follows. First, the user places the wafer 3 into the annular embracing groove 4. The inner wall surface of the annular embracing groove 4 is provided with an elastic material layer. The thickness of the elastic material layer ranges from 0.05 mm to 0.2 mm, and the hardness ranges from Shore A 30 to A 50. The design of the elastic material layer effectively reduces the mechanical stress on the wafer 3 during placement, thereby preventing the wafer 3 from being damaged due to direct contact with hard materials. Subsequently, the user installs the annular embracing device 2 onto the retainer 1 by squeezing the double handles 5. The protrusions 7 on the retainer 1 and the concave points 6 on the annular embracing device 2 form a nested connection, with the gap between the protrusions 7 and the concave points 6 ranging from 0.01 mm to 0.1 mm. This gap design ensures that there is sufficient friction between the two while also enabling convenient installation and removal. The surface of the double handles 5 is provided with anti-slip textures, with a depth ranging from 0.1 mm to 0.5 mm, a width ranging from 1 mm to 3 mm, and a spacing ranging from 2 mm to 5 mm. The anti-slip textured design improves operational stability, allowing users to install or remove the chip 3 without additional tools.
[0027] Specific applications of this device include the processing, inspection, and storage of wafers 3. For example, during the processing of wafers 3, it is necessary to frequently change wafers 3 of different specifications to meet production requirements. In this case, the user only needs to use the double handles 5 to remove the ring-shaped clamping device 2 from the retainer 1, replace it with a new wafer 3, and then reinstall it. The whole process is simple and quick, significantly improving the efficiency and accuracy of wafer 3 processing and inspection. In addition, this device is also suitable for optical device processing and other fields that require high-precision fixing and manipulation of wafers 3.
[0028] The innovation of this device lies in the precise fit design between the retainer 1 and the ring-shaped clasp device 2. The protrusions 7 on the retainer 1 and the recesses 6 on the ring-shaped clasp device 2 form a nested connection, creating a stable mechanical locking structure to prevent the wafer 3 from shifting or loosening during processing or inspection. The dual-handle design 5 of the ring-shaped clasp device 2 significantly improves the efficiency of wafer 3 installation and removal, making it particularly suitable for production environments requiring frequent wafer 3 replacements. The elastic material layer design of the ring-shaped clasp groove 4 effectively reduces the mechanical stress on the wafer 3 during placement, thereby improving the wafer 3's lifespan.
[0029] The device has a simple overall structure, making it easy to manufacture and maintain. All components are modularly designed, facilitating rapid assembly and replacement in practical applications. The cartridge 1 and the ring-shaped clasp device 2 are made of high-strength aluminum alloy or stainless steel, with surfaces anodized or nickel-plated to improve corrosion and wear resistance. This material selection not only ensures the device's strength and durability but also enables its long-term use in harsh environments.
[0030] Through the above technical solution, this invention solves the problems of unstable wafer 3 fixation and inconvenient operation in the prior art, significantly improving the efficiency and accuracy of wafer 3 processing and inspection, and has broad application prospects. The operating principle and operation process of this device have been fully verified in practical applications, and its stability and reliability have been highly recognized by users.
[0031] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.
Claims
1. A device for holding and manipulating a wafer comprising a cassette (1), a ring-shaped cradle (2) and a wafer (3), characterized in that: The plug (1) is located at the top of the device and has multiple parallel groove structures on its surface; the annular embracing device (2) has an overall annular structure and an annular embracing groove (4) on its inner side for placing and fixing the wafer (3).
2. The apparatus of claim 1, wherein: The plug (1) has symmetrical protrusions (7) on both sides. The protrusions (7) are hemispherical or cylindrical in shape, with a diameter ranging from 1 mm to 3 mm and a height ranging from 0.5 mm to 2 mm.
3. The apparatus of claim 2, wherein: The ring-shaped embracing device (2) has symmetrically arranged concave points (6) on both sides. The concave points (6) are hemispherical or cylindrical in shape, with a diameter ranging from 1 mm to 3 mm and a depth ranging from 0.5 mm to 2 mm, and are used to form a nested connection with the protrusions (7) on the plug (1).
4. The apparatus of claim 1, wherein: The depth of the annular embracing groove (4) ranges from 0.1 mm to 0.5 mm, and the width ranges from 1.1 times to 1.5 times the thickness of the wafer (3).
5. The apparatus of claim 4, wherein: The inner wall surface of the annular embracing groove (4) is provided with an elastic material layer, the thickness of which ranges from 0.05 mm to 0.2 mm and the hardness ranges from Shore A 30 to A 50.
6. The apparatus of claim 1, wherein: The ring-shaped embracing device (2) has two handles (5) symmetrically arranged at both ends. The length of the handles (5) ranges from 50 mm to 100 mm, the width ranges from 10 mm to 20 mm, and the thickness ranges from 2 mm to 5 mm.
7. The apparatus of claim 6, wherein: The surface of the double handle (5) is provided with anti-slip texture, the depth of which ranges from 0.1 mm to 0.5 mm, the width from 1 mm to 3 mm, and the interval from 2 mm to 5 mm.
8. The apparatus of claim 1, wherein: The gap between the protrusion (7) on the stopper (1) and the recess (6) on the annular embracing device (2) is between 0.01 mm and 0.1 mm.
9. The apparatus of claim 1, wherein: The materials of the stopper (1) and the ring-shaped embracing device (2) are high-strength aluminum alloy or stainless steel, and their surfaces are anodized or nickel-plated.