Silicon carbide high-voltage silicon stack

Abstract

The utility model relates to the technical field of high-voltage silicon stacks, in particular to a silicon carbide high-voltage silicon stack which comprises a packaging shell, a heat dissipation mechanism is arranged on the outer side of the packaging shell, a high-voltage silicon stack mechanism is installed in the packaging shell, and the two ends of the high-voltage silicon stack mechanism are connected with lead connecting pipes. The heat dissipation mechanism comprises heat dissipation fins, and the heat dissipation fins are evenly fixed to the outer side of the packaging shell in a circumferential mode. The beneficial effects are that the surface of the second connecting sheet is provided with the positioning groove, and the surface of the first connecting sheet is fixedly provided with the positioning column, so the first connecting sheet is in positioning connection with the silicon carbide chips through the positioning column and the positioning groove in the silicon carbide accumulation soldering tin connection process, and the positioning accumulation of a plurality of silicon carbide chips is maintained; therefore, the high-voltage silicon stacks can be soldered in order.

Description

Technical Field

[0001] This utility model relates to the field of high-voltage silicon stack technology, and in particular to a silicon carbide high-voltage silicon stack. Background Technology

[0002] Silicon carbide is an inorganic material that can be called diamond grit or refractory sand. However, silicon carbide is often used in silicon stack structures.

[0003] A silicon stack is a high-voltage rectifier device formed by encapsulating several diodes together in epoxy resin. It is an essential component in high-voltage rectification that converts AC to DC. High-voltage silicon stacks are widely used in black and white / color televisions, color monitors, high-definition color TV flyback transformers, and other electronic instruments and equipment, and even microwave ovens in daily life, which is a large application area.

[0004] High-voltage silicon stacks have advantages such as small size, light weight, high mechanical strength, ease of use and no radiation. They are widely used in the medical, communications and aerospace fields, which will place higher demands on the quality, heat dissipation and stability of high-voltage silicon stacks.

[0005] For example, the prior art Chinese patent publication number "CN221201173U" provides a silicon carbide high-voltage silicon stack, including a first lead and a second lead disposed at both ends, and a plurality of silicon carbide chips stacked between the first lead and the second lead, with a connecting piece disposed between two adjacent silicon carbide chips; the connecting piece is made of metal material, and the connecting piece includes a sheet structure and a boss disposed on the sheet structure, with a plurality of bumps disposed on the upper surface of the boss, the upper surface area of ​​the boss being smaller than the bottom area of ​​the sheet structure, and the bottom area of ​​the sheet structure being not smaller than the area of ​​the front side of the silicon carbide chip; the front side of one of the two adjacent silicon carbide chips is opposite to the boss of the connecting piece disposed between them, and the upper surface of the boss is connected to the front side of the silicon carbide chip by welding, and the back side of the connecting piece is opposite to the back side of the other silicon carbide chip.

[0006] The device has good high temperature resistance, high voltage characteristics, and good high frequency characteristics, and is small in size.

[0007] In existing high-voltage silicon carbide stacks, silicon carbide chips are directly connected by solder. However, silicon carbide chips are prone to slippage, causing positional displacement at the solder joints. This results in misalignment at the solder joints of the stacked silicon carbide chips, and the stacking of silicon carbide chips becomes skewed and uneven. Furthermore, the outer packaging of the high-voltage silicon stack makes it difficult for the surface of the packaging structure to dissipate heat quickly, resulting in less contact with the outside air and slower heat dissipation.

[0008] Therefore, a silicon carbide high-pressure silicon stack is proposed. Summary of the Invention

[0009] The purpose of this invention is to address the shortcomings of existing technologies, such as the tendency of silicon carbide chips to slip, leading to positional displacement at the solder joints, misalignment of the silicon carbide chip stacking solder joints, and uneven and skewed stacking of silicon carbide chips. Therefore, this invention proposes a high-voltage silicon carbide stack.

[0010] To achieve the above objectives, this utility model provides the following technical solution:

[0011] Design a silicon carbide high-voltage silicon stack, including an encapsulation shell, a heat dissipation mechanism is provided on the outside of the encapsulation shell, a high-voltage silicon stack mechanism is installed inside the shell, and lead wire connecting pipes are connected to both ends of the high-voltage silicon stack mechanism.

[0012] The heat dissipation mechanism includes heat dissipation fins, which are uniformly fixed to the outside of the encapsulation shell in a circular shape.

[0013] The high-voltage silicon stack mechanism includes a silicon carbide chip and a first connecting piece, the first connecting piece being connected to both sides of the silicon carbide chip, and the lead connecting tube being connected to the middle of the outermost two first connecting pieces.

[0014] Furthermore, the heat dissipation fins have an elongated strip structure with ventilation slots inside.

[0015] Furthermore, a mounting plate is fixed to the outer side of the encapsulation shell. The mounting plate has a rectangular plate structure and is arranged in a cross shape, with mounting holes on its surface.

[0016] Furthermore, a lead wire connector is threaded onto the outer side of the lead wire connector tube, and a lead wire is connected to the outer end of the lead wire connector.

[0017] Furthermore, the lead connecting tube passes through both ends of the package housing, and its surface is fitted with a sealing gasket. A nut is connected to the surface of the lead connecting tube at a position outside the sealing gasket, and the sealing gasket abuts against both ends of the package housing.

[0018] Furthermore, a second connecting piece is fixed between the two sides of the silicon carbide chip. The surface of the second connecting piece has a positioning groove. The first connecting piece is connected to the outside of the second connecting piece, and positioning posts are uniformly fixed on its surface. The positioning posts are inserted into the positioning groove.

[0019] Furthermore, an overlapping plate is fixed to the outer side of the first connecting piece. The overlapping plate is horizontally arranged and distributed in a cross shape, with abutment posts fixed at both ends of its outer end.

[0020] Furthermore, protective rings are fixed to both ends of the silicon carbide chip. The protective rings are circular rings, and the abutting post abuts against the outside of the protective rings.

[0021] The silicon carbide high-pressure silicon stack proposed in this utility model has the following advantages:

[0022] 1. This utility model provides second connecting pieces on both sides of a silicon carbide chip, and positioning grooves on the surface of the second connecting pieces. Additionally, positioning posts are fixed on the surface of the first connecting piece. Therefore, during the silicon carbide stacking solder connection process, the first connecting piece is positioned and connected to the silicon carbide chip through the positioning posts and positioning grooves, maintaining the positioning and stacking of multiple silicon carbide chips, keeping the stacking neat, and facilitating neat soldering of the high-voltage silicon stack.

[0023] The present invention encapsulates the outer side of the high-voltage silicon stack, and heat dissipation fins are evenly arranged on the outer side. Ventilation grooves are arranged inside the heat dissipation fins, which can increase the contact surface between the encapsulation shell and the external air, thereby improving the heat dissipation performance of the encapsulation shell. The encapsulation shell can be disassembled and installed through the mounting plate and mounting holes. Attached Figure Description

[0024] Figure 1 This is a schematic diagram of the overall structure of this utility model;

[0025] Figure 2 This utility model Figure 1 Enlarged view of point A;

[0026] Figure 3 This utility model Figure 1 A partial schematic diagram of the high-voltage silicon stack mechanism;

[0027] Figure 4 This utility model Figure 1 A schematic diagram of the silicon carbide chip and the first connecting piece;

[0028] Figure 5 This utility model Figure 1 A schematic diagram of the silicon carbide chip and the second connecting piece;

[0029] Figure 6 This utility model Figure 1 A schematic diagram of the first connecting piece and positioning post.

[0030] In the diagram: 1. Encapsulation shell; 2. Mounting plate; 3. Mounting hole; 4. Heat sink fins; 5. Lead wire; 6. Lead wire connector; 7. Lead wire connecting tube; 8. Nut; 9. Sealing gasket; 10. Ventilation slot; 11. Positioning post; 12. Abutment post; 13. First connecting piece; 14. Overlap plate; 15. Silicon carbide chip; 16. Protective ring; 17. Second connecting piece; 18. Positioning slot. Detailed Implementation

[0031] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present utility model. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments.

[0032] Example 1

[0033] Please see Figures 1 to 6 The figure shows a silicon carbide high-voltage silicon stack, including a package shell 1. A heat dissipation mechanism is provided on the outside of the package shell 1, and a high-voltage silicon stack mechanism is installed inside it. Lead wire connecting pipes 7 are connected to both ends of the high-voltage silicon stack mechanism.

[0034] The heat dissipation mechanism includes heat dissipation fins 4, which are uniformly fixed to the outside of the encapsulation shell 1 in a circular pattern.

[0035] The high-voltage silicon stack mechanism includes a silicon carbide chip 15 and a first connecting piece 13. The first connecting piece 13 is connected to both sides of the silicon carbide chip 15, and the lead connecting tube 7 is connected to the middle of the outermost two first connecting pieces 13.

[0036] The lead wire connector 6 is threaded on the outside of the lead wire connector tube 7, and the lead wire 5 is connected to the outer end of the lead wire connector 6.

[0037] The lead wire connecting tube 7 passes through both ends of the package housing 1, and its surface is fitted with a sealing gasket 9. A nut 8 is connected to the surface of the lead wire connecting tube 7 and located outside the sealing gasket 9. The sealing gasket 9 abuts against both ends of the package housing 1.

[0038] By providing the lead connection tube 7, it is convenient to connect the lead 5 to the lead connection tube 7 on the outside of the package housing 1 through the lead connection head 6, thereby connecting the lead 5 to the silicon carbide chip 15 inside the package housing 1.

[0039] A second connecting piece 17 is fixed between the two sides of the silicon carbide chip 15. A positioning groove 18 is opened on the surface of the second connecting piece 17. A first connecting piece 13 is connected to the outside of the second connecting piece 17. Positioning posts 11 are uniformly fixed on its surface and inserted into the positioning groove 18.

[0040] The outer side of the first connecting piece 13 is fixed with an overlapping plate 14. The overlapping plate 14 is horizontally arranged and distributed in a cross shape. The two ends of its outer end are fixed with abutment posts 12.

[0041] The silicon carbide chip 15 has protective rings 16 fixed at both ends of its edge. The protective rings 16 are circular rings, and the abutting post 12 abuts against the outside of the protective rings 16.

[0042] A positioning groove 18 is provided on the surface of the second connecting piece 17, and a positioning post 11 is fixed on the surface of the first connecting piece 13. Therefore, during the process of stacking solder on the silicon carbide chip 15, the first connecting piece 13 is positioned and connected to the silicon carbide chip 15 through the positioning post 11 and the positioning groove 18. Multiple silicon carbide chips 15 are stacked in a position, keeping the stack neat and facilitating neat soldering of the high voltage silicon stack.

[0043] Example 2

[0044] Please see Figures 1 to 6 The figure shows a silicon carbide high-voltage silicon stack, including a package shell 1. A heat dissipation mechanism is provided on the outside of the package shell 1, and a high-voltage silicon stack mechanism is installed inside it. Lead wire connecting pipes 7 are connected to both ends of the high-voltage silicon stack mechanism.

[0045] The heat dissipation mechanism includes heat dissipation fins 4, which are uniformly fixed to the outside of the encapsulation shell 1 in a circular pattern.

[0046] The heat dissipation fins 4 are elongated strips with ventilation slots 10 inside.

[0047] A mounting plate 2 is fixed to the outside of the encapsulation shell 1. The mounting plate 2 is a rectangular plate structure and is arranged in a cross shape. Mounting holes 3 are opened on its surface.

[0048] Heat dissipation fins 4 are evenly arranged on the outside of the encapsulation shell 1, and ventilation slots 10 are provided inside the heat dissipation fins 4. This can increase the contact surface between the encapsulation shell 1 and the external air, thereby improving the heat dissipation performance of the encapsulation shell 1. The encapsulation shell 1 can be disassembled and installed through the mounting plate 2 and mounting holes 3.

[0049] Working method: By setting second connecting pieces 17 on both sides of the silicon carbide chip 15 and setting positioning grooves 18 on the surface of the second connecting pieces 17, and fixing positioning posts 11 on the surface of the first connecting piece 13, the first connecting piece 13 is positioned and connected to the silicon carbide chip 15 through the positioning posts 11 and positioning grooves 18 during the soldering connection process of the silicon carbide chip 15. Multiple silicon carbide chips 15 are positioned and stacked, keeping the stack neat, which facilitates neat soldering of the high voltage silicon stack.

[0050] The encapsulation housing 1 is encapsulated on the outside of the high-voltage silicon stack mechanism, and heat dissipation fins 4 are evenly arranged on the outside of the encapsulation housing 1. Ventilation slots 10 are arranged inside the heat dissipation fins 4, which can increase the contact surface between the encapsulation housing 1 and the external air, thereby improving the heat dissipation performance of the encapsulation housing 1. The encapsulation housing 1 can be disassembled and installed through the mounting plate 2 and the mounting hole 3.

[0051] The above are merely preferred embodiments of this utility model, but the scope of protection of this utility model is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in this utility model, based on the technical solution and inventive concept of this utility model, should be included within the scope of protection of this utility model.

Claims

1. A silicon carbide high voltage silicon stack comprising an encapsulation housing (1), characterized in that: The outer side of the encapsulation shell (1) is provided with a heat dissipation mechanism, and a high-voltage silicon stack mechanism is installed inside it. The two ends of the high-voltage silicon stack mechanism are connected to lead wire connecting pipes (7). The heat dissipation mechanism includes heat dissipation fins (4), which are uniformly fixed to the outside of the encapsulation shell (1) in a circular pattern. The high-voltage silicon stack mechanism includes a silicon carbide chip (15) and a first connecting piece (13). The first connecting piece (13) is connected to both sides of the silicon carbide chip (15), and the lead connecting tube (7) is connected to the middle of the outermost two first connecting pieces (13).

2. A silicon carbide high voltage silicon stack as claimed in claim 1, characterized in that: The heat dissipation fins (4) are elongated and have ventilation slots (10) inside.

3. A silicon carbide high voltage silicon stack as claimed in claim 1, characterized in that: The outer side of the encapsulation shell (1) is fixed with a mounting plate (2). The mounting plate (2) is a rectangular plate structure and is arranged in a cross shape. Mounting holes (3) are opened on its surface.

4. A silicon carbide high-voltage silicon stack according to claim 1, characterized in that: The lead wire connector (6) is threaded on the outside of the lead wire connector (7), and the lead wire (5) is connected to the outer end of the lead wire connector (6).

5. A silicon carbide high-voltage silicon stack according to claim 1, characterized in that: The lead wire connecting tube (7) passes through both ends of the encapsulation shell (1), and its surface is fitted with a sealing gasket (9). A nut (8) is connected to the surface of the lead wire connecting tube (7) and located outside the sealing gasket (9). The sealing gasket (9) abuts against both ends of the encapsulation shell (1).

6. A silicon carbide high voltage silicon stack as claimed in claim 1, characterized in that: The silicon carbide chip (15) has a second connecting piece (17) fixed in the middle of both sides. The surface of the second connecting piece (17) has a positioning groove (18). The first connecting piece (13) is connected to the outside of the second connecting piece (17). Positioning posts (11) are uniformly fixed on its surface. The positioning posts (11) are inserted into the positioning groove (18).

7. A silicon carbide high voltage silicon stack as claimed in claim 6, characterized in that: The first connecting piece (13) is fixed with an overlapping plate (14) on its outer side. The overlapping plate (14) is horizontally arranged and distributed in a cross shape. The two ends of its outer end are fixed with abutment posts (12).

8. A silicon carbide high voltage silicon stack as claimed in claim 7, characterized in that: The silicon carbide chip (15) has protective rings (16) fixed at both ends of its edges. The protective rings (16) are circular rings, and the abutting post (12) abuts against the outside of the protective rings (16).

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