Monomer rotation space type ALD deposition coating equipment

Abstract

The utility model discloses a monomer rotation space type ALD deposition coating device which comprises a main cavity, a left cavity door and a right cavity door, the left cavity door and the right cavity door are respectively connected to two sides of the main cavity through cavity door hinges, and the left cavity door and the right cavity door can form an independent vacuum reaction cavity with the main cavity. The left cavity door and the right cavity door are respectively provided with a multi-cavity rotating stand, each multi-cavity rotating stand is divided into 4n independent single-face opening areas, an independent cavity is formed in the side, facing the side wall of the cavity, of the opening direction, and a vacuum reaction cavity composed of the main cavity, the left cavity door and the right cavity door is equally divided into 4n functional areas corresponding to the multi-cavity rotating stands. A first vacuum isolation area, a precursor B reaction area, a second vacuum isolation area and a precursor A reaction area are correspondingly arranged according to clockwise circulation. A single process cavity is matched with a double-cavity-door structure, cooling and feeding before discharging are carried out while process production is carried out, a plurality of equant independent function subareas are designed to be matched with a multi-cavity rotating frame, the process rhythm is improved, air source consumption is reduced, and the production cost is reduced.

Description

Technical Field

[0001] This utility model relates to the field of coating equipment, and in particular to a single-unit rotating spatial type ALD deposition coating equipment. Background Technology

[0002] Atomic layer deposition (ALD) is a high-precision thin film deposition technique based on chemical vapor deposition, growing thin films layer by layer at the atomic level. With its excellent three-dimensional conformality, uniformity of large-area film deposition, and precise film thickness control, ALD technology is showing increasingly significant advantages and has broad application prospects in semiconductor manufacturing, MEMS devices, optics, and other fields.

[0003] Alternating current generation (ALD) can be categorized into temporal ALD and spatial ALD. In traditional temporal ALD, precursors are sequentially injected into a chamber and separated by a cleaning and purging step. In spatial ALD, precursors are continuously supplied at different locations and kept separate by inert gas regions. Film growth is achieved by exposing the silicon wafer to the locations containing the different precursors. Because the intervening cleaning step is eliminated, spatial ALD processes are faster and more easily scaled up compared to temporal ALD.

[0004] Traditional time-based ALD equipment involves placing a silicon wafer into a single chamber of a deposition apparatus, sequentially heating it to the reaction temperature, introducing precursor A for adsorption, purging to remove residual precursor A from the deposition apparatus, introducing precursor B to react with precursor A on the silicon wafer surface, depositing the required atomic layer on the wafer surface, and purging to remove residual precursor B from the deposition apparatus. Because the process reaction takes place in a single chamber, insufficient cleanliness of the equipment during production can easily occur, resulting in lower product quality and a higher number of defective products.

[0005] Furthermore, traditional time-based processes involve repeated introduction of precursors and purging with inert gas, resulting in poor precursor utilization efficiency and further limiting the ability to use expensive precursors in large-scale applications. Therefore, designing a spatial ALD continuous production method can effectively reduce precursor consumption, thereby lowering costs. Utility Model Content

[0006] To address the problems of poor utilization efficiency, high production costs, and relatively low equipment efficiency of traditional time-based ALD precursors, this invention provides a single-unit rotating spatial ALD deposition coating device.

[0007] To solve the above-mentioned technical problems, the technical solution adopted by this utility model is: a single-unit rotary spatial ALD deposition coating device, including a main cavity, a left cavity door, and a right cavity door. The left and right cavity doors are respectively connected to the two sides of the main cavity through cavity door hinges. Both the left and right cavity doors can form independent vacuum reaction chambers with the main cavity. The left and right cavity doors are respectively designed with multi-chamber rotating frames. The multi-chamber rotating frames are divided into 4n independent single-sided opening areas, with the opening direction facing the side wall of the cavity to form an independent chamber. Each chamber is equipped with a small turntable to carry silicon. The wafer holders, each capable of holding multiple layers of silicon wafers for simultaneous coating, are divided into 4n functional zones by the main chamber, left chamber door, and right chamber door. These zones, arranged clockwise, are the first vacuum isolation zone, the precursor B reaction zone, the second vacuum isolation zone, and the precursor A reaction zone. Each functional zone has a vacuum flange with a purge inert gas inlet pipe, a precursor B gas inlet pipe, a vacuum flange with a purge inert gas inlet pipe, and a precursor A gas inlet pipe on the side wall of the main chamber.

[0008] Furthermore, the main cavity, left cavity door, and right cavity door are all semi-cylindrical structures, and the main cavity has multiple legs for direct installation and fixation to the floor or platform.

[0009] Furthermore, the multi-chamber rotating frame is a cylindrical structure, welded from stainless steel tubing and steel plates.

[0010] Furthermore, each of the vacuum flange ends is connected to a vacuum valve, which is then connected to a vacuum pump.

[0011] Furthermore, each of the gas inlet pipes is connected to a gas pulse control valve, which is then connected to the corresponding gas cylinder or plant gas supply terminal.

[0012] Furthermore, the rotation of the multi-chamber rotating frame and the small turntable is controlled by a rotational device.

[0013] Furthermore, the rotating device consists of a power input gear located at the bottom of the main cavity and a high-speed ratio rotating transmission mechanism installed below the multi-chamber rotating frame. The power input gear drives the multi-chamber rotating frame to revolve and the small turntable to rotate through the high-speed ratio rotating transmission mechanism.

[0014] Furthermore, the gap between the main cavity and the multi-chamber rotating frame is less than 1mm, so that the inert gas blower forms an air isolation zone at the junction, ensuring effective isolation of each zone.

[0015] As can be seen from the above description of the structure of this utility model, compared with the prior art, this utility model has the following advantages:

[0016] 1. This utility model adopts a spatial ALD continuous production, using a single process chamber and a double-chamber door structure. During the process production, pre-discharge cooling and loading can be carried out simultaneously, improving the production cycle. The design of multiple equally divided independent functional zones, combined with a multi-chamber rotating frame, facilitates the expansion of chambers and capacity. One rotation of the multi-chamber rotating frame can complete one or more ALD cycles, significantly improving the process cycle, further enhancing coating uniformity and coating efficiency, effectively reducing gas consumption, and thus reducing production costs.

[0017] 2. All process gases in this invention are controlled by gas pulse control valves, which can accurately and quantitatively control the supply of precursors, effectively reduce gas waste, and thus better control costs. Attached Figure Description

[0018] The accompanying drawings, which form part of this application, are used to provide a further understanding of the present invention. The illustrative embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an undue limitation of the present invention. In the drawings:

[0019] Figure 1 This is an axonometric view of the overall structure of Example 1;

[0020] Figure 2 This is a top view of Example 1 with the left cavity door closed and the right cavity door open, and the loading process completed.

[0021] Figure 3 This is a top view of Example 1 with the left and right cavities open and neither cavities loaded.

[0022] Figure 4 This is a top view of Example 2, showing the left and right cavities open and neither is being loaded with materials. Detailed Implementation

[0023] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present utility model and are not intended to limit the present utility model.

[0024] Example 1

[0025] refer to Figures 1-3A single-unit rotary spatial ALD deposition coating device includes a main cavity 1, a left cavity door 2, and a right cavity door 3. The left cavity door 2 and the right cavity door 3 are connected to the two sides of the main cavity 1 respectively by cavity door hinges 9. The left cavity door 2 and the right cavity door 3 can each form an independent vacuum reaction chamber with the main cavity 1. The left cavity door and the right cavity door are respectively designed with multi-chamber rotating frames 4. The multi-chamber rotating frames 4 are divided into eight independent single-sided opening areas, with the opening direction facing the side wall of the cavity to form an independent chamber. Each chamber is equipped with a small turntable 5 to support a silicon wafer holder 7. Each silicon wafer holder 7 can hold multiple layers of silicon wafers 6 for simultaneous coating. The main cavity 1, together with the left cavity door 2 and the right cavity door 3, forms an independent vacuum reaction chamber. The empty reaction chamber is divided into eight functional zones corresponding to the multi-chamber rotating frame. In a clockwise cycle, these zones are: the first vacuum isolation zone a, the precursor B reaction zone b, the second vacuum isolation zone c, and the precursor A reaction zone d. Each functional zone has a vacuum flange 10 with a purge inert gas inlet pipe 11, a precursor B gas inlet pipe 12, a vacuum flange 10 with a purge inert gas inlet pipe 11, and a precursor A gas inlet pipe 13 on the side wall of the main chamber. Each vacuum flange 10 is connected to a vacuum valve 14, which is then connected to a vacuum pump. Each gas inlet pipe is connected to a gas pulse control valve 15, which is then connected to the corresponding gas cylinder or plant gas supply end.

[0026] The main cavity 1, left cavity door 2, and right cavity door 3 are all semi-cylindrical structures. The main cavity 1 has multiple legs and is directly installed and fixed to the floor or platform.

[0027] The multi-chamber rotating frame 4 is a cylindrical structure, welded from stainless steel round tubes and steel plates. The gap between the main chamber 1 and the multi-chamber rotating frame 4 is less than 1mm, so that the inert gas blower forms an air isolation zone at the junction, ensuring effective isolation of each zone.

[0028] The rotation of the multi-chamber rotating frame 4 and the small turntable 5 is controlled by a planetary rotation device 8. The planetary rotation device 8 consists of a power input gear 81 located at the bottom of the main cavity and a high-speed ratio planetary rotation transmission mechanism 82 installed below the multi-chamber rotating frame. The power input gear 81 drives the multi-chamber rotating frame 4 to revolve and the small turntable 5 to rotate through the high-speed ratio planetary rotation transmission mechanism 82.

[0029] The process flow is as follows: The automated loading and unloading equipment loads the wafer racks 7 containing multi-layer silicon wafers 6 and places them onto the eight small turntables of the multi-chamber rotating frame 4 inside the right chamber door 3 for positioning and fixation. Then, the right chamber door 3 is closed, and all vacuum pumps and vacuum valves 14 are turned on to evacuate the chambers and perform corresponding preheating treatment until the chambers meet the reaction conditions for the ALD coating process. At this time, the rotation device 8 operates, driving the multi-chamber rotating frame 4 to revolve and the small turntables 5 to rotate. Then, the gas pulse control valves 15 corresponding to the reaction zones d of all precursors A are opened, introducing gas into the corresponding chambers. Trimethylaluminum (TMA), the aluminum source, is supplied with a metered amount of gaseous precursor A via a gas pulse control valve 15, allowing it to adsorb onto all exposed surfaces of the silicon wafer within the reaction zone. The multi-chamber rotating frame 4 continuously revolves clockwise, while the small rotating platform 5 continuously rotates on its own axis. When the multi-chamber rotating frame 4 rotates to the point where the chamber that has undergone precursor A adsorption enters the vacuum isolation zone c, a vacuum pump evacuates the chamber, removing excess precursor A and byproducts. Alternatively, an inert gas (such as nitrogen) can be introduced for purging to more efficiently remove excess gas and byproducts from the chamber. Subsequently, when the evacuated and inert gas-purged chambers begin to enter the precursor B reaction zone b, all pulse valves corresponding to the precursor B reaction zone b open, introducing oxidizing gas (using water as a source) into the corresponding chambers. The gas pulse control valves then control the metered supply of gaseous precursor B, allowing it to oxidize on all exposed surfaces of the silicon wafer within the reaction zone. When the multi-chamber rotating frame 4 rotates to allow the chamber where precursor B has undergone reaction to rotate into the first vacuum isolation zone a, a vacuum pump is used to evacuate the chamber, removing excess precursor B and byproducts. Alternatively, an inert gas (such as nitrogen) can be introduced for purging to more efficiently remove excess gas and byproducts from the chamber. After sequentially performing precursor A attachment, purging, precursor B reaction, and purging again, a single atomic layer thin film is deposited on the silicon wafer surface. As the chamber rotating frame 4 continues to rotate clockwise, the chamber with the single atomic layer thin film deposited re-enters the precursor A reaction zone d for the next coating cycle. Continuous operation control completes multi-layer atomic layer deposition until the desired coating thickness is reached, at which point the coating process stops, and cooling is performed. After cooling, the right chamber door is opened, and an automated loading and unloading system unloads the silicon wafer holder 7 containing the multi-layer silicon wafers 6.

[0030] When the right chamber 3 is closed and the coating reaction is underway, the automated loading and unloading equipment simultaneously loads the silicon wafer rack 7, which contains multi-layer silicon wafers 6, onto the eight small turntables 5 of the multi-chamber rotating rack 4 inside the left chamber for positioning and fixing. When the right chamber 3 completes the coating reaction and unloading process, the left and right chambers alternately complete the corresponding operation processes to carry out continuous production.

[0031] Example 2

[0032] Unlike Embodiment 1, the multi-chamber rotating frame 4 in Embodiment 2 is divided into four independent single-sided opening areas. The main chamber 1, together with the left chamber door 2 and the right chamber door 3, forms an independent vacuum reaction chamber, corresponding to the multi-chamber rotating frame, which is divided into four functional areas in clockwise order: the first vacuum isolation area a, the precursor B reaction area b, the second vacuum isolation area c, and the precursor A reaction area d. All other settings are the same as in Embodiment 1.

[0033] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A single-rotating-geometry ALD deposition coating apparatus, characterized by: The system includes a main cavity (1), a left cavity door (2), and a right cavity door (3). The left cavity door (2) and the right cavity door (3) are connected to the two sides of the main cavity (1) respectively through cavity door hinges (9). The left cavity door (2) and the right cavity door (3) can each form an independent vacuum reaction chamber with the main cavity (1). The left cavity door (2) and the right cavity door (3) are respectively designed with multi-chamber rotating frames (4). The multi-chamber rotating frames (4) are divided into 4n independent single-sided opening areas. The opening direction faces the side wall of the cavity to form an independent chamber. Each chamber is provided with a small rotating platform (5) to support a silicon wafer rack (7). Each silicon wafer rack (7) can hold multiple layers of silicon wafers (6) for simultaneous processing. The coating process involves the main cavity (1) forming independent vacuum reaction chambers with the left cavity door (2) and the right cavity door (3). The corresponding multi-chamber rotating frame (4) is divided into 4n functional areas, which are respectively the first vacuum isolation area (a), the precursor B reaction area (b), the second vacuum isolation area (c), and the precursor A reaction area (d) in a clockwise cycle. Each functional area is equipped with a vacuum flange (10) + purge inert gas inlet pipe (11), a precursor B gas inlet pipe (12), a vacuum flange (10) + purge inert gas inlet pipe (11), and a precursor A gas inlet pipe (13) on the side wall of the main cavity.

2. The apparatus for monomolecular rotation space type ALD deposition according to claim 1, wherein: The main cavity (1), left cavity door (2), and right cavity door (3) are all semi-cylindrical structures. The main cavity (1) has multiple legs and is directly installed and fixed on the floor or platform.

3. The apparatus for ALD deposition of claim 1, wherein: The multi-chamber rotating frame (4) is a cylindrical structure, which is welded from stainless steel round tubes and steel plates.

4. The apparatus for ALD deposition of claim 1, wherein: The vacuum flange (10) is connected to a vacuum valve (14) at each end, and then connected to a vacuum pump.

5. The apparatus for ALD deposition of claim 1, wherein: Each gas inlet pipe is connected to a gas pulse control valve (15) and then to the corresponding gas cylinder or plant gas supply terminal.

6. The apparatus for ALD deposition of claim 1, wherein: The rotation of the multi-chamber rotating frame (4) and the small rotating platform (5) is controlled by a rotational device (8).

7. The apparatus for ALD deposition of claim 6, wherein: The rotating device (8) consists of a power input gear (81) located at the bottom of the main cavity and a high-speed ratio rotating transmission mechanism (82) installed below the multi-chamber rotating frame. The power input gear (81) drives the multi-chamber rotating frame (4) to revolve and the small turntable (5) to rotate through the high-speed ratio rotating transmission mechanism (82).

8. The apparatus for ALD deposition of claim 1, wherein: The gap between the main cavity (1) and the multi-chamber rotating frame (4) is less than 1 mm, so that the inert gas blower forms an air isolation zone at the junction.

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